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WO2008044368A1 - Affichage à cristaux liquides - Google Patents

Affichage à cristaux liquides Download PDF

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Publication number
WO2008044368A1
WO2008044368A1 PCT/JP2007/062298 JP2007062298W WO2008044368A1 WO 2008044368 A1 WO2008044368 A1 WO 2008044368A1 JP 2007062298 W JP2007062298 W JP 2007062298W WO 2008044368 A1 WO2008044368 A1 WO 2008044368A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid crystal
crystal display
photodiode
display device
pixels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/062298
Other languages
English (en)
Japanese (ja)
Inventor
Hiromi Katoh
Christopher Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of WO2008044368A1 publication Critical patent/WO2008044368A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters

Definitions

  • the present invention relates to a liquid crystal display device including a photodiode that reacts to light incident from the observer side of a display screen.
  • a liquid crystal display device includes a liquid crystal display panel and a knock light that illuminates the liquid crystal display panel from the back.
  • a liquid crystal display panel is configured by sandwiching a liquid crystal layer between an active matrix substrate and a counter substrate.
  • An active matrix substrate is formed by forming a plurality of pixels in a matrix on a glass substrate.
  • one pixel is usually composed of three sub-pixels.
  • Each subpixel is composed of a TFT and a pixel electrode.
  • the counter substrate includes a counter electrode and a color filter on a glass substrate.
  • the color filter has a red (R), green (G), or blue (B) colored layer for each sub-pixel.
  • the voltage applied between each pixel electrode and the counter electrode is adjusted, and the transmittance of the liquid crystal layer is adjusted for each sub-pixel.
  • an image is displayed on the display screen by the illumination light of the backlight transmitted through the liquid crystal layer and the colored layer.
  • a conventional liquid crystal display device has a function of displaying an image. Recently, however, a liquid crystal display device having a function of capturing an image has been proposed (for example, a patent) Refer to Document 1.) o
  • a liquid crystal display device disclosed in Patent Document 1 a plurality of photodiodes are formed in a matrix on an active matrix substrate, and the liquid crystal display panel functions as an area sensor.
  • each photodiode is used as each photodiode.
  • Each PIN diode is formed by using a TFT process and sequentially providing a p-layer, an i-layer, and an n-layer on a silicon film common to the TFT.
  • PIN diode On the knock light side a light shielding film is usually provided to prevent illumination light from the knock light from entering the PIN diode.
  • Patent Document 1 Japanese Unexamined Patent Publication No. 2006-3857
  • Patent Document 1 Since an area sensor is constituted by a plurality of photodiodes, each photodiode is arranged in a display area. Therefore, the light incident on the liquid crystal display panel also enters the photodiodes after passing through the counter substrate and the liquid crystal layer. For this reason, in the liquid crystal display device of Patent Document 1, the amount of light that can be detected by each photodiode is reduced, so that the sensitivity of the entire system is lowered.
  • An object of the present invention is to provide a liquid crystal display device that can solve the above-described problems and can improve the sensitivity of the photodiodes arranged in the display region of the active matrix substrate.
  • a liquid crystal display device is a liquid crystal display device comprising an active matrix substrate and a counter substrate provided with a color filter, wherein the active matrix substrate is in a matrix form And a plurality of photodiodes arranged in the display area, each of the plurality of pixels has three sub-pixels, and the color filter is provided for each of the sub-pixels.
  • the photodiode includes a colored layer of red, green, or blue, and the photodiode has a characteristic that sensitivity is increased as the wavelength of incident light is shorter, and a light detection region of the photodiode is in a thickness direction of the liquid crystal display device. It is characterized by being arranged so as to overlap the blue colored layer.
  • the photodiode is arranged in the display area of the active matrix substrate so as to have the highest sensitivity in accordance with its sensitivity characteristic. Therefore, according to the liquid crystal display device of the present invention, In comparison, the sensitivity of the photodiode can be improved.
  • FIG. 1 is a plan view partially showing a configuration of a liquid crystal display device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a cross-section obtained by cutting along cutting line A-- FIG.
  • FIG. 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS. 1 and 2.
  • the liquid crystal display device is a liquid crystal display device including an active matrix substrate and a counter substrate provided with a color filter, and the active matrix substrate includes a plurality of pixels arranged in a matrix.
  • the photodiode has a characteristic that the sensitivity increases as the wavelength of incident light is shorter, and the photodetection region of the photodiode is in the blue colored layer in the thickness direction of the liquid crystal display device. It arrange
  • the photodiode is formed of a silicon film provided on a base substrate of the active matrix substrate, and the silicon film is formed of polycrystalline silicon or continuous grains.
  • the semiconductor region may be provided, and the intrinsic semiconductor region may be the light detection region.
  • FIG. 1 is a plan view partially showing a configuration of a liquid crystal display device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a cross-section obtained by cutting along the cutting line A—coil in FIG.
  • FIG. 1 mainly shows the structure of a pixel formed on an active matrix substrate.
  • the counter substrate only the outer shape of the color filter is indicated by a one-dot chain line. Further, the interlayer insulating film is not shown in FIG. 1, and hatching is omitted in FIG.
  • the liquid crystal display device in the present embodiment includes the liquid crystal display panel 4 shown in FIG. 2 and a backlight (not shown) that illuminates it from the back.
  • the liquid crystal display panel 4 includes an active matrix substrate 1, a liquid crystal layer 2, and a counter substrate 3, and the liquid crystal layer 2 is sandwiched between two substrates.
  • the liquid crystal display device according to the present embodiment also includes various optical films.
  • the active matrix substrate 1 includes pixels. Although not shown in FIGS. 1 and 2, a plurality of pixels are arranged in a matrix. In the active matrix substrate 1, an area where a plurality of pixels are arranged is a display area. One pixel is composed of three sub-pixels.
  • FIG. 1 illustrates only three sub-pixels 5a to 5c.
  • each of the sub-pixels 5 a to 5 c includes an active element 7 and a transparent electrode 8.
  • the active element 7 is a thin film transistor (TFT).
  • the transparent electrode 8 is a pixel electrode formed of ITO or the like.
  • the active element 7 includes a silicon film 11 in which a source region and a drain region are formed, and a gate electrode 9.
  • the silicon film 11 is formed of continuous grain boundary crystalline silicon (CGS) because of its excellent charge transfer speed.
  • the gate electrode 9 is integrally formed with the gate line 10 arranged along the horizontal direction of the screen.
  • a source electrode 12 is connected to the source region, and a drain electrode 14 is connected to the drain region.
  • the source electrode 12 is formed integrally with the source wiring 13 arranged along the vertical direction of the screen.
  • the drain electrode 14 is connected to the transparent electrode 8.
  • 15 indicates a wiring for a storage capacitor
  • 16 indicates a region where the storage capacitor is formed.
  • the active matrix substrate 1 includes a photodiode 20 in the display region.
  • Figures 1 and 2 show only a single photodiode 20. In practice, however, the active matrix substrate 1 is provided with a photodiode 20 for each pixel.
  • the plurality of photodiodes 20 arranged for each pixel function as an area sensor.
  • the photodiode 20 is a PIN diode having a lateral structure.
  • the photodiode 20 includes a silicon film provided on a glass substrate 26 that serves as a base substrate of the active matrix substrate 1.
  • the silicon film constituting the photodiode 20 is formed at the same time using the process of forming the active element 7. For this reason, the photodiode 20 is also formed of continuous grain boundary crystalline silicon (CGS) excellent in charge transfer speed.
  • the silicon film is provided with a p-type semiconductor region (p layer) 21, an intrinsic semiconductor region (transition) 22 and an n-type semiconductor region (n layer) 23 in this order along the plane direction.
  • the i layer 22 is a light detection region.
  • the i layer 22 may be a region that is electrically more neutral than the adjacent p layer 21 and n layer 23.
  • the i layer 22 is preferably a region that does not contain any impurities, or a region where the conduction electron density and hole density are equal to each other.
  • reference numeral 28 denotes an insulating film formed on the glass substrate 26, and the photodiode 20 is formed thereon.
  • a light-shielding film 27 is formed of a conductive metal material below the photodiode 20 in order to prevent illumination light from a knock light (not shown) from entering the photodiode 20.
  • the photodiode 20 is covered with interlayer insulating films 29 and 30.
  • Reference numeral 24 denotes a wiring connected to the p-layer 21
  • reference numeral 25 denotes a wiring connected to the n-layer 23.
  • the counter substrate 3 includes a color filter having a plurality of colored layers.
  • the colored layer is provided for each subpixel.
  • FIG. 1 only the colored layers 6 a to 6 c corresponding to the sub-pixels 5 a to 5 c among the many colored layers are illustrated.
  • the colored layers 6a to 6c overlap the transparent electrodes 8 of the corresponding sub-pixels on the surface of the glass substrate 31 serving as the base substrate of the counter substrate 3 in the thickness direction of the liquid crystal display device. Is formed. Further, a black matrix for light shielding is provided between adjacent colored layers. Tas 32 is provided. A transparent counter electrode 33 is formed so as to cover all the colored layers.
  • the liquid crystal display device in the present embodiment has a display function and an imaging function as in the case of the conventional liquid crystal display device, but in accordance with the sensitivity characteristics of the photodiode 20, It differs from the conventional liquid crystal display device in that 20 arrangements are made. This point will be described with reference to FIG.
  • FIG. 3 is a graph showing the spectral sensitivity of the photodiode shown in FIGS.
  • the silicon film constituting the photodiode 20 is a continuous grain boundary crystalline silicon.
  • the photodiode 20 formed of continuous grain boundary crystalline silicon has a characteristic that the sensitivity increases as the wavelength of incident light is shorter. That is, the photodiode 20 has a characteristic that it is easy to react to blue light having a short wavelength, has a long wavelength, is difficult to react to red light, and has characteristics.
  • the photodiode 20 is arranged so as to overlap the blue (B) colored layer 6a in the thickness direction of the semiconductor device.
  • the sensitivity of the photodiode can be improved as compared with the conventional case.
  • the colored layer 6b is a red (R) colored layer
  • the colored layer 6c is a green (G) colored layer.
  • the formation of the silicon film of continuous grain boundary crystalline silicon can be performed, for example, by the following steps. First, an oxide silicon film and an amorphous silicon film are sequentially formed on the interlayer insulating film 28 shown in FIG. Next, a nickel thin film serving as a catalyst for promoting crystallization is formed on the surface of the amorphous silicon film. Next, the nickel thin film and the amorphous silicon film are reacted by annealing to form a crystalline silicon layer at the interface between them. Thereafter, the unreacted nickel film and the silicon-nickel layer are removed by etching or the like. Next, annealing is performed on the remaining silicon film to advance crystallization, so that a silicon film formed of continuous grain boundary crystalline silicon is obtained. Thereafter, by forming a photoresist and performing etching, the shape of the silicon film is changed to a predetermined shape, and various ion implantations are performed, thereby completing the photodiode 20.
  • the photodiode 20 is a silicon film of continuous grain boundary crystalline silicon. It is not limited to what was formed by.
  • the photodiode 20 only needs to have a characteristic that the sensitivity increases as the wavelength of incident light is shorter. Therefore, the photodiode 20 may be formed of, for example, polycrystalline silicon. This is because polycrystalline silicon has characteristics similar to those of the continuous grain boundary crystalline silicon shown in FIG.
  • Formation of a silicon film from polycrystalline silicon can be performed, for example, as follows.
  • an amorphous silicon silicon film is formed. Then, the amorphous silicon film is dehydrogenated by, for example, heating at 500 ° C. for 2 hours, and annealing is performed to crystallize the amorphous silicon film. As a result, a polycrystalline silicon film is obtained.
  • a known laser annealing method for example, a method of irradiating an amorphous silicon film with a laser beam with an excimer laser can be mentioned.
  • the liquid crystal display device according to the present invention can have industrial applicability.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

L'invention concerne un affichage à cristaux liquides se caractérisant par le fait que la sensibilité d'une photodiode située dans une zone d'affichage d'un substrat à matrice active est améliorée. L'affichage à cristaux liquides comprend un substrat à matrice active (1) et un contre-substrat (3) équipé d'un filtre coloré. Le substrat à matrice active (1) comprend une pluralité de pixels formant une matrice et une pluralité de photodiodes (20) disposées dans la zone d'affichage. Chaque pixel se compose de trois sous-pixels (5a-5c). Le filtre coloré comporte une couche colorée rouge, verte ou bleue correspondant à chaque sous-pixel. Les photodiodes (20) se caractérisent par le fait que, plus la longueur d'onde d'une lumière incidente est courte, plus leur sensibilité augmente. De plus, chaque photodiode (20) est conçue de façon que sa zone de détection de la lumière (une couche i (22)) chevauche une couche colorée bleue (6a) dans le sens de l'épaisseur de l'affichage à cristaux liquides.
PCT/JP2007/062298 2006-10-11 2007-06-19 Affichage à cristaux liquides Ceased WO2008044368A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006277837 2006-10-11
JP2006-277837 2006-10-11

Publications (1)

Publication Number Publication Date
WO2008044368A1 true WO2008044368A1 (fr) 2008-04-17

Family

ID=39282578

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/062298 Ceased WO2008044368A1 (fr) 2006-10-11 2007-06-19 Affichage à cristaux liquides

Country Status (1)

Country Link
WO (1) WO2008044368A1 (fr)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041489A1 (fr) * 2008-10-09 2010-04-15 シャープ株式会社 Photodiode, dispositif d'affichage équipé de photodiodes, et procédé de fabrication correspondant
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US7830461B2 (en) 2002-05-23 2010-11-09 Apple Inc. Light sensitive display
US7872641B2 (en) 2002-02-20 2011-01-18 Apple Inc. Light sensitive display
EP2214150A4 (fr) * 2007-11-29 2011-02-23 Sharp Kk Dispositif d'affichage d'image
US8207946B2 (en) 2003-02-20 2012-06-26 Apple Inc. Light sensitive display
US8441422B2 (en) 2002-02-20 2013-05-14 Apple Inc. Light sensitive display with object detection calibration
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US9939935B2 (en) 2013-07-31 2018-04-10 Apple Inc. Scan engine for touch controller architecture
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
US12153764B1 (en) 2020-09-25 2024-11-26 Apple Inc. Stylus with receive architecture for position determination

Citations (2)

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JP2005134809A (ja) * 2003-10-31 2005-05-26 Toshiba Matsushita Display Technology Co Ltd 表示装置
WO2006104212A1 (fr) * 2005-03-29 2006-10-05 Sharp Kabushiki Kaisha Substrat de matrice active, dispositif d’affichage et dispositif electronique l’utilisant

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JP2005134809A (ja) * 2003-10-31 2005-05-26 Toshiba Matsushita Display Technology Co Ltd 表示装置
WO2006104212A1 (fr) * 2005-03-29 2006-10-05 Sharp Kabushiki Kaisha Substrat de matrice active, dispositif d’affichage et dispositif electronique l’utilisant

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441422B2 (en) 2002-02-20 2013-05-14 Apple Inc. Light sensitive display with object detection calibration
US9971456B2 (en) 2002-02-20 2018-05-15 Apple Inc. Light sensitive display with switchable detection modes for detecting a fingerprint
US9411470B2 (en) 2002-02-20 2016-08-09 Apple Inc. Light sensitive display with multiple data set object detection
US8570449B2 (en) 2002-02-20 2013-10-29 Apple Inc. Light sensitive display with pressure sensor
US7872641B2 (en) 2002-02-20 2011-01-18 Apple Inc. Light sensitive display
US9134851B2 (en) 2002-02-20 2015-09-15 Apple Inc. Light sensitive display
US11073926B2 (en) 2002-02-20 2021-07-27 Apple Inc. Light sensitive display
US8044930B2 (en) 2002-05-23 2011-10-25 Apple Inc. Light sensitive display
US7880819B2 (en) 2002-05-23 2011-02-01 Apple Inc. Light sensitive display
US7880733B2 (en) 2002-05-23 2011-02-01 Apple Inc. Light sensitive display
US7852417B2 (en) 2002-05-23 2010-12-14 Apple Inc. Light sensitive display
US7830461B2 (en) 2002-05-23 2010-11-09 Apple Inc. Light sensitive display
US9354735B2 (en) 2002-05-23 2016-05-31 Apple Inc. Light sensitive display
US8207946B2 (en) 2003-02-20 2012-06-26 Apple Inc. Light sensitive display
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US8289429B2 (en) 2004-04-16 2012-10-16 Apple Inc. Image sensor with photosensitive thin film transistors and dark current compensation
US8248395B2 (en) 2007-11-29 2012-08-21 Sharp Kabushiki Kaisha Image display device
EP2214150A4 (fr) * 2007-11-29 2011-02-23 Sharp Kk Dispositif d'affichage d'image
WO2010041489A1 (fr) * 2008-10-09 2010-04-15 シャープ株式会社 Photodiode, dispositif d'affichage équipé de photodiodes, et procédé de fabrication correspondant
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US9519361B2 (en) 2011-06-22 2016-12-13 Apple Inc. Active stylus
US9921684B2 (en) 2011-06-22 2018-03-20 Apple Inc. Intelligent stylus
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9582105B2 (en) 2012-07-27 2017-02-28 Apple Inc. Input device for touch sensitive devices
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10067580B2 (en) 2013-07-31 2018-09-04 Apple Inc. Active stylus for use with touch controller architecture
US10845901B2 (en) 2013-07-31 2020-11-24 Apple Inc. Touch controller architecture
US9939935B2 (en) 2013-07-31 2018-04-10 Apple Inc. Scan engine for touch controller architecture
US11687192B2 (en) 2013-07-31 2023-06-27 Apple Inc. Touch controller architecture
US12340048B2 (en) 2013-07-31 2025-06-24 Apple Inc. Touch controller architecture
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10061450B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch
US10067618B2 (en) 2014-12-04 2018-09-04 Apple Inc. Coarse scan and targeted active mode scan for touch
US10664113B2 (en) 2014-12-04 2020-05-26 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
US12153764B1 (en) 2020-09-25 2024-11-26 Apple Inc. Stylus with receive architecture for position determination

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