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WO2007132721A1 - Electronic component and method for manufacturing the same - Google Patents

Electronic component and method for manufacturing the same Download PDF

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Publication number
WO2007132721A1
WO2007132721A1 PCT/JP2007/059637 JP2007059637W WO2007132721A1 WO 2007132721 A1 WO2007132721 A1 WO 2007132721A1 JP 2007059637 W JP2007059637 W JP 2007059637W WO 2007132721 A1 WO2007132721 A1 WO 2007132721A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
electrode layer
binder resin
resistor layer
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/059637
Other languages
French (fr)
Japanese (ja)
Inventor
Hisashi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2008515504A priority Critical patent/JPWO2007132721A1/en
Priority to CN2007800174054A priority patent/CN101443859B/en
Publication of WO2007132721A1 publication Critical patent/WO2007132721A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C10/00Adjustable resistors
    • H01C10/30Adjustable resistors the contact sliding along resistive element
    • H01C10/305Adjustable resistors the contact sliding along resistive element consisting of a thick film
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
    • H01C17/283Precursor compositions therefor, e.g. pastes, inks, glass frits

Definitions

  • the present invention relates to an electronic component including a stacked electrode layer and a resistor layer, and a substrate supporting the electrode layer and the resistor layer.
  • Patent Documents 1 and 2 listed below disclose transfer type substrates formed by transferring a resistor layer to a substrate made of epoxy resin or the like.
  • the transfer type substrate has a structure in which a resistor layer is provided in a predetermined pattern on the surface of a molded substrate, and electrode layers are formed under the both end portions of the resistor layer.
  • a terminal electrically connected to each of the electrode layers is provided, and a slider is provided between the electrode layer and the electrode layer for sliding on the surface of the resistor layer. A change in voltage corresponding to the sliding position of the slider can be detected between the terminal and the terminal.
  • the transfer type substrate is screen-printed on a transfer plate, for example, a paste-like resistor layer formed by mixing carbon black and a thermosetting binder resin in a solvent.
  • thermosetting binder resin and silver particles are mixed in a solvent is screen-printed on the resistor layer.
  • the binder resin used in the resistor layer and the binder resin provided in the electrode layer are thermally cured by heating at a temperature of about 400 ° C.
  • a transfer plate in which an electrode layer is superimposed on the resistor layer is mounted in a mold, an epoxy resin or the like is injected into the cavity of the mold, and the substrate is injection-molded and cooled. Later, the transfer plate is peeled off.
  • a resistor layer appears on the surface of the substrate, and in a state in which the electrode layer is superimposed on the inside of the resistor layer, the resistor layer and the electrode layer are supported in the substrate. Become.
  • Patent Document 1 Patent Publication of Patent No. 3372636
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2004-55900 Disclosure of the Invention Problem to be Solved by the Invention
  • the film strength is low, and the sliding of the slider causes wear, so that it is used immediately and repeatedly. There is also a possibility that the resistor layer peels off the substrate. Thus, the sliding characteristics can not be improved, and a long-life resistive substrate can not be obtained.
  • the erosion of the electrode layer into the resistor layer leads to a reduction in the thickness of the resistor layer, leading to a decrease in migration resistance since the entire silver particles of the electrode layer approach the surface of the resistor layer. .
  • Patent Document 2 deals with the point that silver powder leaches out to the surface of a resistor layer, but a decrease in film strength starting from the melting of silver powder, a decrease in adhesion between a resistor layer and an electrode layer, etc. There is no problem recognition. Moreover, although patent document 2 is invention which makes a thermosetting resin temperature a difference with the binder resin contained in the said electrode layer, and the binder resin contained in the said resistor layer, the melting of the silver particle by baking is appropriate. It is necessary to use different binder resins for the electrode layer and the resistor layer, and it is necessary to use a different binder resin. Basically, since the firing step for the electrode layer and the firing step for the resistor layer are performed in separate steps, there is a problem that the manufacturing step is likely to be complicated.
  • the present invention is intended to solve the above-mentioned conventional problems, and in particular, the adhesion between the electrode layer and the resistor layer can be improved, and the force of the electrode layer and the film of the resistor layer can be improved. It is an object of the present invention to provide an electronic component capable of improving strength and a method of manufacturing the same.
  • the electronic component in the present invention is
  • It comprises: a stacked electrode layer and a resistor layer; and a substrate for supporting the electrode layer and the resistor layer,
  • the electrode layer has a thermosetting binder resin and conductive particles dispersed in the binder resin,
  • the conductive particles are characterized in that they contain silver as a main component, bismuth oxide, carbon, or a composite powder comprising bismuth oxide and carbon.
  • Composite powder is different from “mixed powder” or “alloy” in which a plurality of types of particles are simply mixed, and when one particle is taken out, silver and bismuth oxide or silver may be added to the particle. And carbon, or silver and bismuth oxide and carbon.
  • the composite powder containing silver as a main component is harder to melt (or is insoluble) at a firing temperature for curing the binder resin than silver powder. Accordingly, heat generation due to the melting can be appropriately suppressed as compared with the conventional case, and as a result, decomposition of the binder resin and the like can be suppressed. Therefore, compared with the prior art, no gap due to decomposition occurs between the electrode layer and the resistor layer, and the electrode layer does not erode the resistor layer, so adhesion between the resistor layer and the electrode layer can be reduced. While improving appropriately, it is possible to improve the film strength of the resistor layer and the electrode layer.
  • the electrode layer and the resistor layer are carried in the substrate, and the surface of the resistor layer appears in the same plane as the surface of the substrate.
  • Re preferably, the electrode layer and the resistor layer are carried in the substrate, and the surface of the resistor layer appears in the same plane as the surface of the substrate.
  • Re is formed as a transfer type substrate, and the surface of the resistor layer can be formed into a mirror surface, which is preferable because sliding characteristics can be improved.
  • the thickness of the resistor layer Because it can be maintained, the migration resistance can be improved.
  • the binder resin preferably comprises an acetylene-terminated polyisoimide oligomer.
  • the glass transition temperature can be increased, and the heat resistance can be improved.
  • the resistor layer preferably includes a thermosetting binder resin and carbon powder, and the binder resin of the resistor layer is preferably the same type as the binder resin contained in the electrode layer. It is possible to more appropriately improve the adhesion between the resistor layer and the electrode layer.
  • the method of manufacturing an electronic component in the present invention is characterized by having the following steps.
  • a paste-like electrode layer obtained by mixing, in a solvent, at least a thermosetting binder resin, silver as a main component and bismuth oxide, or carbon, or bismuth oxide and a composite powder containing carbon. Forming on the resistor layer;
  • the composite powder is more likely to melt than the silver powder.
  • the decomposition of the binder resin can be appropriately suppressed. Therefore, it is possible to appropriately suppress the occurrence of a gap due to decomposition between the electrode layer and the resistor layer, and the phenomenon that the electrode layer erodes the resistor layer.
  • the transfer plate when the transfer plate is peeled in the step (d), the transfer plate can be properly peeled from the resistor layer, and the resistor layer is peeled together with the transfer plate as in the prior art. Problems can be suppressed. As described above, in the present invention, it is possible to stably manufacture a transfer substrate by a simple manufacturing method.
  • thermosetting binder resin in the step (a), at least a thermosetting binder resin is contained in a solvent.
  • a paste-like resistor layer formed by mixing with carbon powder is formed on the transfer plate, and the paste-like resistor layer is dried.
  • the binder resin of the resistor layer it is preferable to thermally cure the binder resin of the resistor layer together with the binder resin of the electrode layer by the heat treatment in the step (C).
  • the binder resin of the resistor layer and the binder resin of the electrode layer are thermally cured in the same firing step, the melting of the composite powder can be appropriately suppressed, and thus the resistor layer is thus obtained.
  • the production process can be further facilitated.
  • the use of a resin of the same type as the binder resin mixed in the electrode layer as a binder resin for the antibody layer improves the adhesion between the electrode layer and the resistor layer. While being possible, the manufacturing process can be simplified, which is preferable.
  • the electronic component in the present invention is configured to have a stacked electrode layer and resistor layer, and a substrate supporting the electrode layer and the resistor layer, and the electrode layer is thermally cured.
  • Conductive particles dispersed in the binder resin, and the conductive particles contain silver as a main component and bismuth oxide, or carbon, or bismuth oxide, and carbon. It is characterized by including the following composite powder.
  • the above composite powder is less likely to melt (or is insoluble) at a firing temperature for curing Noinda resin, as compared to silver powder. Therefore, the heat generation due to the melting can be appropriately suppressed as compared with the conventional case, and as a result, the decomposition of the binder resin and the like can be suppressed. Therefore, compared with the conventional case, no gap due to decomposition is generated between the electrode layer and the resistor layer, and the electrode layer does not erode the resistor layer, so that the adhesion between the resistor layer and the electrode layer is appropriate. It is possible to improve the resistance and to improve the film strength of the resistor layer and the electrode layer.
  • the electronic component in the present invention is a substrate on which the slider slides on the resistor layer, the electronic component is a long-life substrate with excellent sliding characteristics. Further, when the electronic component of the present invention is manufactured as a transfer type substrate, when the transfer plate is peeled off, the transfer type substrate can be stably manufactured without peeling off the resistor layer together with the transfer plate.
  • FIG. 1 is a perspective view showing a resistive substrate (electronic component) used for a variable resistor according to the present embodiment
  • FIG. 2 is a plan view of the resistive substrate
  • FIG. 3 is a III-III line of FIG. FIG.
  • the resistor substrate 1 has an insulating molded substrate 2 formed of an epoxy resin or the like.
  • a circular opening 2a to which a rotor is attached is formed at the center of the molded substrate 2.
  • a common electrode pattern 3, a resistance detection pattern 4 and an electrode auxiliary pattern 5 are formed on the surface 2b of the molded substrate 2, and these main portions are ring-shaped patterns concentric with the center of the opening 2a. It is formed.
  • the common electrode pattern 3 has a continuous lead-out pattern 3a which extends to the side edge 2c of the molded substrate 2, and the lead-out pattern 4a continuous with the resistance detection pattern 4 and the lead-out pattern 5a continuous with the auxiliary electrode pattern 5 Extend to the edge 2c.
  • Terminals 6a, 6b and 6c made of a conductive metal material project from the side edge 2c of the molded substrate 2, and the terminal 6a is superimposed on the lead pattern 3a and made conductive, and the terminal 6b and 6b are formed.
  • the terminals 6c are superimposed on the extraction patterns 4a and 5a and are conducted respectively.
  • the resistance detection pattern 4 and the electrode auxiliary pattern 5 are connected in series with each other in the connection pattern 5 b.
  • the electrode auxiliary pattern 5 is a wire-wound reed that connects one end of the resistance detection pattern 4 to the terminal 6c. It is a turn.
  • FIG. 3 shows a cross section taken along a line ⁇ _ ⁇ in FIG.
  • each pattern has a region formed of only the resistor layer 21 and a region in which the electrode layer 22 is stacked on the substrate inward side of the resistor layer 21.
  • the region formed of only the resistor layer 21 is shown with dots, and the region where the resistor layer 21 and the electrode layer 22 are stacked is shown with hatching. ing.
  • the resistor layer 21 and the electrode layer 22 are stacked over the entire area of the common electrode pattern 3 and the drawing pattern 3a thereof.
  • the range of the angle ⁇ is formed only by the resistor layer 21, and the resistor layer 21 and the electrode layer 22 are laminated on both ends and the lead pattern 4 a.
  • the electrode auxiliary pattern 5 is formed by laminating the resistor layer 21 and the electrode layer 22 over the entire area including the lead pattern 5a and the connection pattern 5b. ing.
  • the range of the angle ⁇ of the resistance detection pattern 4 is a force S formed only by the resistor layer 21 in order to detect a change in resistance value according to the sliding position of the slider,
  • the other patterns are formed by the electrode layer 22, and the electrode layer 22 is not exposed to the surface 2b, and is covered with the resistor layer 21 as shown in FIG.
  • the terminals 6a, 6b, 6c are embedded in the molded substrate 2, and the electrode layer 22 formed on the inner side of the substrate by the pullouts, the turns 3a, 4a, 5a, Each of the terminals 6a, 6b, 6c is joined, for example, via an adhesive layer (not shown) of silver.
  • a rotor (not shown) is attached to the opening 2a, and a conductive slider (not shown) attached to the rotor is a force of the surface of the common electrode pattern 3 and a resistance detection butter. Slide in a state where it is conducted to the surface of the run 4. As a result, a change in resistance corresponding to the sliding position of the slider can be detected between the terminals 6a and 6b and between the terminals 6a and 6c.
  • the electrode layer 22 includes a thermosetting binder resin and conductive particles dispersed in the binder resin, and the conductive particles contain silver as a main component.
  • a composite powder comprising bismuth oxide, carbon, or bismuth oxide and carbon is used.
  • composite powder is different from “mixed powder” in which silver powder and bismuth oxide powder are simply mixed and “alloy” in which a plurality of metals are dissolved, and when one particle is taken out, silver is added to the particles. And bismuth oxide, or silver and carbon, or silver and bismuth oxide and carbon.
  • a composite powder consisting of silver and bismuth oxide or a composite powder consisting of silver and carbon may be used, but a composite powder containing all of silver, bismuth oxide and carbon is more preferable.
  • a composite powder containing all of silver, bismuth oxide and carbon is more preferable.
  • the electrode layer 22 may contain conductive particles other than the composite powder together with the composite powder.
  • the conductive particles are preferably contained in the electrode layer 22 in an amount of 5 to 50% by volume. If the content of the conductive particles is less than 5% by volume, the specific resistance of the electrode layer 22 becomes large, and the specific resistance can not be sufficiently lowered compared to the resistor layer 21. The When the conductive particles are more than 50% by volume, the volume ratio of the binder resin becomes too small, and the film strength is unfavorably lowered. Therefore, it is preferable that the conductive particles contain 5 to 50% by volume.
  • the binder resin is selected from thermosetting resins such as polyimide resin, bismaleimide resin, epoxy resin, phenol resin, and acrylic resin, and in particular, it is preferable that the glass contains an acetylene-terminated polyisoimide oligomer. It is preferable to increase the transition temperature (Tg) and improve the heat resistance.
  • the electrode layer 22 is formed by screen printing a conductive paste obtained by mixing the binder resin, conductive particles and the like in a solvent in a predetermined pattern shape, and removing the solvent by a heat treatment step, and The binder resin is thermally cured.
  • the resistor layer 21 is obtained by dispersing carbon powder as a conductive powder inside a thermosetting binder resin.
  • the carbon powder is carbon black, graphite, carbon fiber, carbon beads, carbon nanotubes, etc., and is not particularly limited.
  • the binder resin constituting the resistor layer 21 is, for example, a polyimide resin, a bismaleimide resin, an epoxy resin, a phenol resin, an acrylic resin, etc., similarly to the binder resin constituting the electrode layer 22. It is selected from thermosetting resins.
  • the binder resin of the resistor layer 21 and the binder resin of the electrode layer 22 are the same type. This is preferable in order to improve the adhesion between the resistor layer 21 and the electrode layer 22.
  • “homogeneous” includes not only the case of the same resin but also derivatives of the resin.
  • the binder resin of the resistor layer 21 preferably also contains an acetylene-terminated polyisoimide oligomer in order to increase the glass transition temperature (Tg) and improve the heat resistance.
  • the specific resistance of the resistor layer 21 is sufficiently larger than the specific resistance of the electrode layer 22.
  • the resistor layer 21 is screen-printed in a predetermined pattern shape of a resistive paste formed by mixing the binder resin, carbon powder and the like in a solvent, and the solvent is removed by a heat treatment step, and The binder resin is thermally cured.
  • the conductive particles contained in the resistor layer 21 may be other than carbon powder,
  • the carbon powder is preferable in that the resistor layer 21 having excellent electrical stability, resistance to corrosion and the like and excellent in environmental resistance can be formed.
  • the resistor layer 21 and the electrode layer 22 are embedded in the molded substrate 2, and the surface 21 a of the resistor layer 21 is the same as that of the molded substrate 2. It appears in the same plane as surface 2b.
  • the resistor substrate 1 shown in FIG. 3 is a transfer-type resistor substrate which will be described later in the manufacturing method, and the surface 2 la of the resistor layer 21 is formed of a mirror surface. Thus, the resistance substrate 1 is excellent in sliding characteristics and can obtain a long life.
  • the conductive particles contained in the electrode layer 22 are composite powders comprising silver as the main component, bismuth oxide or carbon, or bismuth oxide and carbon. is there.
  • the composite powder is less soluble (or insoluble) at the baking temperature for curing the binder resin than silver powder.
  • the heat generation due to the melting can be appropriately suppressed, and as a result, it is possible to suppress the decomposition of the binder resin, the carbon powder and the like.
  • the adhesion between the electrode layer 22 and the resistor layer 21 can be appropriately improved.
  • the film strength of the electrode layer 22 and the resistor layer 21 can be improved as compared with the prior art.
  • the resistance substrate 1 has excellent sliding characteristics without being peeled off from the resistance substrate 1.
  • the migration resistance can also be improved by suppressing the penetration of the electrode layer 22 into the resistor layer 21.
  • the term "paste” refers to a binder resin that has been heat-cured to form a state.
  • the first binder resin is dissolved in a first solvent, and for example, carbon black and carbon fiber (ground powder of carbon fiber having an average particle diameter of 3 to 30 ⁇ m) are dissolved therein. ) To form a resistive paste.
  • the first binder resin is about 30 to 95% by volume, and the carbon black and the carbon fiber are about 5 to 70% by volume in total (the total of the first binder resin excluding the solvent, carbon black, and carbon fiber Is 100% by volume).
  • a transfer plate 30 (see FIG. 4) formed of, for example, a brass plate.
  • the surface of the transfer plate 30 is mirror finished.
  • a stainless steel mask for making the shape of the pattern of the resistor layer 21 (all patterns shown by both dots and hatching in FIG. 2) on the surface of the transfer plate 30 is used for the transfer plate 30;
  • the paste-like resistor layer 21 is screen printed on the surface.
  • the screen-printed paste-like resistor layer 21 is dried at 100 to 250 ° C. for 10 to 60 minutes using a drying oven to evaporate and remove the first solvent. .
  • a part of this drying step may be performed in the same step as drying for the paste-like electrode layer 22 later.
  • a paste-like electrode layer 22 is pattern-formed on the resistor layer 21 by screen printing.
  • the electrode paste is a conductive powder such as a second binder resin, silver as a main component, and a composite powder comprising silver as a main component, bismuth oxide, carbon, or bismuth oxide and carbon in a second solvent. It is a mixture of particles.
  • the second binder resin is about 50 to 95% by volume, and the conductive particles are about 5 to 50% by volume (the second binder resin excluding the solvent, the total of the conductive particles is 100% by volume) .
  • the transfer plate 30 and the resistor layer 21 are covered with a mask for making a pattern of a hatched area in FIG. 2, and a paste-like electrode layer 22 is formed on the surface of the resistor layer 21 which has been dried. Do.
  • the screen-printed paste-like electrode layer 22 is dried at 100 to 260 ° C. for 10 to 60 minutes using a drying oven to evaporate and remove the second solvent.
  • the first binder resin and the second binder resin are simultaneously thermally cured by heating in a firing furnace at a firing temperature of about 400 ° C. for 1 to 2 hours.
  • the resistor layer 21 has a film structure in which carbon powder is dispersed in the thermally cured binder resin.
  • the electrode layer 22 has a film structure in which the composite powder is dispersed in the thermally cured binder resin.
  • carbitol acetate methyl carbitol, ethylolecanolebitone, butyl carbitol, monoglyme, diglyme, methyltriglyme and the like can be used.
  • the first binder resin and the second binder resin may be the same type, and the curing temperature of the first binder resin and the second binder resin may be the same or close to each other, and the temperature may be the same.
  • the binder resin of 1 and the second binder resin can be preferably thermally cured in the same baking step. If the curing temperature of the first binder resin and the second binder resin are largely separated, the firing temperature for the resistor layer 21 and the firing for the paste-like electrode layer 22 can be appropriately set in order to thermally cure both of them. It is necessary to control the temperature separately, which complicates the manufacturing process.
  • thermosetting resins such as polyimide resin, bismaleimide resin, epoxy resin, phenol resin and acrylic resin can be selected, but are limited thereto Not It is preferable to include an acetylene-terminated polyisoimide oligomer in the binder resin in order to increase the glass transition temperature (Tg) and improve the heat resistance.
  • the melting temperature of the composite powder comprising silver, bismuth oxide, carbon, or bismuth oxide and carbon contained in the electrode layer 22 is higher than the curing temperature of the binder resin. ing.
  • the electrode paste of the composite powder in the present embodiment has a melting peak at around 440 ° C. as shown in the experimental results of the examples described later, so heat treatment at around 400 ° C. is preferable. It is also difficult to melt. Or it is insoluble.
  • the curing temperature of the polyimide resin is 300 DEG C. to 380 DEG. C
  • the curing temperature of the bismaleimide resin is about 350 ° C
  • the curing temperature of the acetylene-terminated polyisoimide oligomer is about 300 ° C to 400 ° C, so heat treatment is performed at the curing temperature of each thermosetting resin.
  • the melting of the composite powder can be appropriately suppressed.
  • the glass transition temperature Tg of the polyimide resin is 300. C degree, a glass of bismaleimide resin
  • the glass transition temperature Tg is about 250 to 300 ° C.
  • the glass transition temperature Tg of the acetylene-terminated polyisoimide oligomer is about 300 ° C. to 350 ° C.
  • a terminal adhesive layer (conductive adhesive layer) is formed on the surface of the electrode layer 22 in the portion of each lead pattern 3a, 4a, 5a.
  • a paste-like terminal adhesive layer is formed on the surface of the electrode layer 22 by screen printing.
  • a solvent comprising carbitol acetate etc., 20% by volume of silver powder, 20% by volume of phenol resin and amine compound as a curing agent, 60% by volume of epoxy resin as a main agent (The total volume excluding solvent is 100% by volume). Then, it is dried in an oven at 80 ° C. for 10 minutes to evaporate and remove the solvent in the terminal adhesive layer.
  • the upper surface of the transfer plate 30 is covered with a mold 40.
  • the terminals 6a, 6b, 6c are placed on the surfaces of the electrode layers 22 of the lead patterns 3a, 4a, 5a via the paste-like terminal adhesive layers.
  • a molten epoxy resin molding material is injected into the cavity 41 of the mold 40.
  • the temperature of the mold 40 is 160 to 200 ° C., and the heat of the mold thermally cures the phenol resin and amine compound, which are curing agents of the terminal adhesive layer, and the epoxy resin of the main agent,
  • the terminals 6a, 6b, 6c are bonded to the electrode layer 22 through the terminal adhesive layer in the lead patterns 3a, 4a, 5a.
  • the epoxy resin molding material is cured to form a molded substrate 2.
  • the resistance plate 1 is completed by removing the transfer plate 30 from the molded substrate 2 by taking it out of the mold 40 and as shown in FIG.
  • the manufacturing method of the present embodiment it is possible to stably manufacture a transfer substrate by a simple manufacturing method. That is, conventionally, the electrode layer 22 corrodes the resistive layer 21 in the firing step, whereby a gap is generated between the electrode layer 22 and the resistive layer 21 due to thermal decomposition, and the adhesion is improved. descend. Thus, when the transfer plate 30 shown in FIG. 6 is peeled off from the resistance substrate 1, the adhesion between the transfer plate 30 and the resistor layer 21, the adhesion between the electrode layer 22 and the resistor layer 21.
  • the electrode layer 2 Since it is possible to appropriately suppress the erosion phenomenon into the resistor layer 21 of the second embodiment, the adhesion between the resistor layer 21 and the electrode layer 22 is not reduced compared to the prior art.
  • the adhesion between the resistor layers 21 can be made stronger than the adhesion between the transfer plate 30 and the resistor layers 21.
  • the surface of the transfer plate 30 is mirror-finished, the surface (sliding surface) of the resistor layer 21 formed directly on the surface of the transfer plate 30 is also formed as a mirror surface.
  • the resistance substrate 1 excellent in dynamic characteristics can be manufactured appropriately and easily.
  • the thickness of the resistor layer is eroded, and the migration resistance performance is degraded when the electrode layer is exposed to the surface, or at least a locally thin portion is formed.
  • this corrosion phenomenon does not occur and the film thickness of the resistor layer does not change, so that the migration resistance is significantly improved.
  • the binder resin forming the resistor layer 21 and the binder resin forming the electrode layer 22 can be simultaneously thermally cured in the same baking step, the manufacturing process can be facilitated. .
  • an electrode layer and a resistor layer are screen-printed and fired in a predetermined pattern shape on a flat surface of a substrate.
  • the electrode layer and the resistor layer are not transferred to the substrate side, when the transfer plate is peeled off, the problem that the resistor layer is peeled together with the transfer plate may not occur.
  • the adhesion and the film strength of the electrode layer and the resistor layer it is possible to form a resistance substrate which is excellent in sliding characteristics, long in life, and excellent in migration resistance.
  • the resistance substrate 1 of the present invention is used not only for the rotary variable resistor as shown in FIG. 1 and FIG. 2, but also for a sliding variable resistor that slides linearly, other resistance sensors, etc. It is possible to do S. Further, a comb tooth shaped code pattern formed by laminating a resistor layer as a protective layer (overcoat layer) on an electrode layer as a conductive layer may be supported on a substrate (insulating substrate). In this case, the present invention is applied to the encoder substrate.
  • a resistor layer is formed on a substrate (transfer plate), and an electrode layer is formed on the resistor layer and formed in each of the example and the comparative example. did.
  • the electrode layer is formed to have a binder resin and silver powder, and in the example, the electrode layer is formed of an inorganic resin, silver as main components, bismuth oxide, and carbon. To form a composite powder.
  • the resistor layers in the examples and comparative examples are the same, and are formed of a binder resin and carbon powder.
  • the binder resin used in the electrode layer of the comparative example is an acetylene-terminated polyisoimide oligomer, and the silver powder contains about 30% by volume and the binder resin about 70% by volume.
  • the binder resin used in the electrode layer of the example is also an acetylene-terminated polyisoimide oligomer, and the composite powder contains about 30% by volume in the electrode layer and about 70% by volume of the non-under resin. ing.
  • the composite powder contains about 79 at% (atomic%) of Ag as a main component, bismuth oxide (Bi 2 O 3)
  • a resistor layer was formed by screen printing on a transfer plate, and drying was performed at 260 ° C. for 30 minutes to evaporate the solvent.
  • a paste-like electrode layer is formed by the same screen printing on the resistor layer, and after drying for 30 minutes at 260 ° C. for both the example and the comparative example, the solvent is evaporated.
  • Baking was performed at 390 ° C. for 90 minutes to thermally cure the binder resin.
  • the film thickness of only the portion of the resistor layer and the film thickness of the portion where the electrode layer and the resistor layer overlap in the example and the comparative example were measured with a surface roughness meter.
  • the experimental results are shown in Fig. 8 and Fig. 9.
  • the horizontal axis is the dimension in the width direction of the resistor layer and the electrode layer
  • the vertical axis is the film thickness.
  • FIG. 8 shows the experimental results of the comparative example
  • FIG. 9 shows the experimental results of the example.
  • the film thickness of the portion where the electrode layer and the antibody layer are laminated is thinner than the film thickness of the portion of the resistor layer alone, From this, it can be seen that in the comparative example, the electrode layer erodes the resistor layer.
  • FIG. 10 is a SEM (scanning electron microscope) photograph of the vicinity of the boundary between the resistor layer and the electrode layer of the above-described comparative example (near the arrow shown in FIG. 7) as viewed from directly above.
  • the light dark spots appearing on the left of FIG. 10 are the surface of the resistor layer, and the white spots appearing on the right are the surface of the electrode layer.
  • the surface of the antibody layer is located on the front side (higher position) than the surface of the electrode layer. It can be seen that Also, it can be seen that the surface of the resistor layer appears in some places from the surface of the electrode layer on the right side, and the electrode layer does not completely cover the surface of the resistor layer.
  • silver powder (comparative example), about 79 at% of Ag, and about 16 at% of bismuth oxide (Bi 2 O 3),
  • FIG. 11 is a SEM photograph of a comparative example
  • FIG. 12 is a SEM photograph of an example.
  • Figures 11 and 12 are SEM photographs taken at the same magnification.
  • the substrate (transfer plate) shown in FIG. 7 used in the experiments of FIG. 8 and FIG. 9 is covered with the mold 40 shown in FIG. 5, and the cavity 41 of the mold 40 is melted with epoxy resin. Injection and molding substrate 2 was formed, and the substrate (transfer plate) was removed to manufacture a transfer type resistance substrate.
  • the shape of the transfer type resistance substrate is the same as that shown in FIGS. 1 to 3.
  • the surface hardness of the resistor layer laminated on the electrode layer was measured in a pressure tucker test (PCT) in which heating and humidification were performed under high pressure using each transfer type resistance substrate of the example and the comparative example. .
  • PCT pressure tucker test
  • the conditions were atmospheric pressure of 0.2 MPa, temperature of 121 ° C., and humidity of 100%, for up to 270 hours.
  • the dynamic hardness of the surface was measured under the measurement load of 80 gf and 120 gf.
  • the dynamic hardness when a diamond indenter is brought into contact with the sample surface and a very small force is applied to depress the indenter, the indentation load and the indentation depth of the indenter are measured, and the relationship force between the two is obtained. Is obtained by calculating
  • the apparatus used for the measurement is DUH-201 manufactured by Shimadzu Corporation.
  • FIG. 13 is a graph showing the relationship between elapsed time and dynamic hardness in Examples.
  • FIG. 14 is a graph showing the relationship between the elapsed time and the dynamic hardness of the comparative example.
  • the dynamic hardness did not change much up to 270 hours.
  • the dynamic hardness became low in 100 hours, and in particular, it was possible to obtain only small hardness and hardness as compared with the example.
  • the surface hardness of the resistor layer laminated on the electrode layer is measured in the heat shock test in which the low temperature state and the high temperature state are alternately repeated using each transfer type resistance substrate of the example and the comparative example. did.
  • the conditions were one cycle of heating from 40 ° C. to 148 ° C. and cooling from 148 ° C. to 140 ° C., and this cycle was performed 164 times.
  • the surface hardness (dynamic hardness) was measured under the measurement load of 80 gf and 120 gf.
  • FIG. 15 is a graph showing the relationship between the number of cycles and the dynamic hardness in the example.
  • FIG. 16 is a graph showing the relationship between the number of cycles and the dynamic hardness in the comparative example.
  • Test conditions respectively the transfer type resistor substrates of Examples and Comparative Examples people, pure water soaked in (conductivity 0. 06 X 10- 4 S / m ), between the terminal 6a and the terminal 6c between the terminal ( Figure 2 An applied voltage of 5 V was applied to), and the insulation resistance at this time was measured. The results are shown in FIG.
  • the insulation resistance decreases with time, and in the comparative example, the insulation resistance significantly decreases in about 4 hours, whereas in the example, the insulation resistance decreases about 12 hours. It was found that high insulation resistance was maintained, and that the example was superior to the comparative example in migration resistance. This is considered to be because the penetration of the electrode layer into the resistor layer is suppressed in the example compared to the comparative example, and the film thickness of the resistor layer is maintained as a large film thickness.
  • FIG. 18 shows the experimental results of TG-DTA (thermogravimetric differential thermal analysis) for the electrode pastes of Examples and Comparative Examples.
  • TG-DTA measuring instrument TG / DTA6200 manufactured by SII Nano Technology Co., Ltd. was used.
  • the electrode pastes of the examples and comparative examples used in the experiment are the same as those used in the experiments of FIGS.
  • the electrode paste of the silver powder of the comparative example had a DTA curve and a TG curve, and had a melting peak around about 380 ° C. and a weight loss was observed.
  • the electrode paste of the composite powder of the example had a melting peak at around DTA curve and T G curve force of about 440 ° C. and a weight loss was observed.
  • the melting peak shown in the experiment corresponds to the melting peak of the composite powder in the example and the melting peak of the silver powder in the comparative example.
  • the composite powder of the example was “or less soluble” even by heat treatment at around 400 ° C. Also, since the thermosetting temperature of the binder resin is at most about 400 ° C. (when an acetylene-terminated polyisoimide oligomer is used), the composite powder is appropriately melted even if heat treatment is performed at the curing temperature. It turned out that it can control.
  • FIG. 1 A perspective view showing a resistance substrate of the present embodiment
  • FIG. 2 A plan view of the resistance substrate
  • FIG. 3 A sectional view taken along line III-III in Fig. 2,
  • FIG. 4 shows a method of manufacturing a resistance substrate, and is a cross-sectional view of a state in which a resistance layer and an electrode layer are laminated on a transfer plate,
  • FIG. 5 is a process diagram performed next to FIG. 4 and is a sectional view showing a process of forming a substrate
  • FIG. 5 is a process diagram performed next to FIG. 5 and is a sectional view showing a process of peeling a transfer plate
  • FIG. 7 A sectional view showing the laminated state of the resistor layer and the electrode layer used in the experiment
  • FIG. 10 A SEM photograph of the vicinity of the boundary between the resistor layer and the electrode layer of the comparative example (near the arrow shown in FIG. 7) as viewed from directly above,
  • the transfer type substrate is manufactured from the state shown in FIG. 7, and the elapsed time when the pressure tacker test (PCT) is performed under predetermined conditions, the resistance antibody layer Graph showing the relationship with the surface hardness (dynamic hardness) of
  • the transfer type substrate is manufactured from the state shown in FIG. 7, and the elapsed time when the pressure tacker test (PCT) is performed under predetermined conditions, the resistance antibody layer Graph showing the relationship with the surface hardness (dynamic hardness) of
  • FIG. 17 A graph showing the relationship between elapsed time and insulation resistance when a submersion migration test is performed using the transfer type substrate of the example and the comparative example.

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Abstract

[PROBLEMS] To provide an electronic component, which can improve adhesion particularly between an electrode layer and a resistor layer and, at the same time, can improve the strength of the electrode layer and the resistor layer, and a method for manufacturing the same. [MEANS FOR SOLVING PROBLEMS] An electrode layer (22) comprises a composite powder comprising silver as a main component and bismuth oxide or carbon, or comprising silver as a main component and bismuth oxide and carbon. As compared with a silver powder, the composite powder is less likely to be melted at a firing temperature for curing a binder resin. Accordingly, as compared with the prior art technique, heat generation caused by the melting can be properly suppressed. As a result, decomposition of the binder resin and the like can be suppressed. Accordingly, the adhesion between the resistor layer and the electrode layer can be properly improved, and, at the same time, the strength of the resistor layer and the electrode layer can be improved, and when a transfer plate (30) is separated, the resistor layer is not separated together with the transfer plate (30) and, thus, a transfer-type substrate can be stably formed.

Description

明 細 書  Specification

電子部品及びその製造方法  Electronic component and method of manufacturing the same

技術分野  Technical field

[0001] 本発明は、積層された電極層及び抵抗体層と、前記電極層及び前記抵抗体層を 支持する基板とを有して構成される電子部品に関する。  The present invention relates to an electronic component including a stacked electrode layer and a resistor layer, and a substrate supporting the electrode layer and the resistor layer.

背景技術  Background art

[0002] 下記特許文献 1 , 2には、エポキシ樹脂等の基板に抵抗体層を転写して形成した転 写型基板が開示されている。前記転写型基板は、成形基板の表面に抵抗体層が所 定のパターンで設けられ、この抵抗体層の両端部の下に電極層が重ねられて形成さ れた構成である。そして、それぞれの電極層に導通する端子が設けられ、また電極 層と電極層との間に位置する前記抵抗体層の表面を摺動する摺動子が設けられ、こ の摺動子と前記端子との間で、摺動子の摺動位置に対応する電圧の変化を検出で きるようになつている。  Patent Documents 1 and 2 listed below disclose transfer type substrates formed by transferring a resistor layer to a substrate made of epoxy resin or the like. The transfer type substrate has a structure in which a resistor layer is provided in a predetermined pattern on the surface of a molded substrate, and electrode layers are formed under the both end portions of the resistor layer. A terminal electrically connected to each of the electrode layers is provided, and a slider is provided between the electrode layer and the electrode layer for sliding on the surface of the resistor layer. A change in voltage corresponding to the sliding position of the slider can be detected between the terminal and the terminal.

[0003] 前記転写型基板は、まず転写板上に、例えば溶媒中にカーボンブラック及び熱硬 化性のバインダー樹脂が混合されて成るペースト状の抵抗体層をスクリーン印刷する  [0003] First, the transfer type substrate is screen-printed on a transfer plate, for example, a paste-like resistor layer formed by mixing carbon black and a thermosetting binder resin in a solvent.

[0004] 次に、溶媒中に、熱硬化性のバインダー樹脂と銀粒子とを混合したペースト状の電 極層を前記抵抗体層の上にスクリーン印刷する。 Next, a paste-like electrode layer in which a thermosetting binder resin and silver particles are mixed in a solvent is screen-printed on the resistor layer.

[0005] そして、 400°C前後の温度で加熱して、前記抵抗体層に用いられているバインダー 樹脂と、前記電極層に設けられているバインダー樹脂を熱硬化させる。 Then, the binder resin used in the resistor layer and the binder resin provided in the electrode layer are thermally cured by heating at a temperature of about 400 ° C.

[0006] そして前記抵抗体層の上に電極層が重ねられた転写板を金型内に装着し、前記 金型のキヤビティ内にエポキシ樹脂などを射出して基板をインジェクション成形し、冷 却した後に、前記転写板を剥離する。 Then, a transfer plate in which an electrode layer is superimposed on the resistor layer is mounted in a mold, an epoxy resin or the like is injected into the cavity of the mold, and the substrate is injection-molded and cooled. Later, the transfer plate is peeled off.

[0007] これにより、基板の表面に抵抗体層が現れ、この抵抗体層の内側に電極層が重ね られた状態で、この抵抗体層と電極層とが基板内に坦設されたものとなる。 [0007] Thus, a resistor layer appears on the surface of the substrate, and in a state in which the electrode layer is superimposed on the inside of the resistor layer, the resistor layer and the electrode layer are supported in the substrate. Become.

特許文献 1 :特許第 3372636号の特許公報  Patent Document 1: Patent Publication of Patent No. 3372636

特許文献 2:特開 2004— 55900号公報 発明の開示 発明が解決しょうとする課題 Patent Document 2: Japanese Patent Application Laid-Open No. 2004-55900 Disclosure of the Invention Problem to be Solved by the Invention

[0008] しかし、上記した転写型基板には次のような問題点があった。  However, the transfer type substrate described above has the following problems.

すなわち、前記バインダー樹脂を硬化させるための焼成時、特に、バインダー樹脂 の架橋を促進させるために焼成温度を上昇させたり、焼成時間を長くすると、前記電 極層内に含まれる銀粒子が溶融および発熱するため、バインダー樹脂やカーボン粉 力 sこの熱により分解される。このような樹脂等の分解により、十分な膜強度を有する電 極層や抵抗体層を得ることが出来なかった。しかも、前記電極層と前記抵抗体層の 間に前記樹脂等の分解による隙間が発生すること、および前記電極層が前記抵抗 体層を侵食するため前記抵抗体層が十分に熱硬化収縮できず、前記抵抗体層と電 極層間の密着性が低下した。したがって、上記した前記転写板を剥離するときに、前 記転写板と一緒に抵抗体層が基板側から剥がれてしまうといった不具合が発生した  That is, at the time of firing for curing the binder resin, in particular, when the firing temperature is increased to accelerate crosslinking of the binder resin, or when the firing time is extended, the silver particles contained in the electrode layer are melted and Binder resin and carbon powder are decomposed by this heat to generate heat. It was not possible to obtain an electrode layer or a resistor layer having sufficient film strength due to the decomposition of such a resin or the like. In addition, a gap due to decomposition of the resin or the like is generated between the electrode layer and the resistor layer, and the electrode layer erodes the resistor layer, so that the resistor layer can not be sufficiently cured by heat curing. The adhesion between the resistor layer and the electrode layer was reduced. Therefore, when the above-mentioned transfer plate is peeled off, the problem that the resistor layer peels off from the substrate side together with the transfer plate occurred.

[0009] また仮に、前記抵抗体層が前記基板側から転写板と一緒に剥がれなかったとして も、膜強度が低いことから摺動子の摺動により磨耗しやすぐまた繰り返しの使用によ り前記抵抗体層が基板から剥離する可能性もあった。このように摺動特性を向上でき ず高寿命の抵抗基板を得ることが出来なかった。 Also, even if the resistor layer does not separate from the substrate side together with the transfer plate, the film strength is low, and the sliding of the slider causes wear, so that it is used immediately and repeatedly. There is also a possibility that the resistor layer peels off the substrate. Thus, the sliding characteristics can not be improved, and a long-life resistive substrate can not be obtained.

[0010] また前記電極層の前記抵抗体層内への侵食は前記抵抗体層の厚みが薄くなり、 前記電極層の銀粒子全体が抵抗層表面に近づくため耐マイグレーション性の低下 にも繋がった。  Further, the erosion of the electrode layer into the resistor layer leads to a reduction in the thickness of the resistor layer, leading to a decrease in migration resistance since the entire silver particles of the electrode layer approach the surface of the resistor layer. .

[0011] 特許文献 1 , 2に記載された発明では、上記した問題点の認識がなぐ当然、上記 問題を解決するための手段も提示されていない。  [0011] In the inventions described in Patent Documents 1 and 2, as a matter of course, the above-mentioned problems are not recognized, and means for solving the problems are not presented.

[0012] 特許文献 2は銀粉が抵抗体層の表面に浸出する点を課題とするが、銀粉の溶融を 発端とする膜強度の低下や、抵抗体層と電極層間の密着性の低下等の課題認識が 無い。また特許文献 2は、前記電極層内に含まれるバインダー樹脂と、前記抵抗体 層に含まれるバインダー樹脂との熱硬化温度に差を持たせるといった発明であるが、 焼成による銀粒子の溶融を適切に抑制できず、上記した本課題を根本的に解決でき ないこと、また電極層と抵抗体層とに違うバインダー樹脂を用いる必要があり、さらに 基本的には電極層に対する焼成工程と、抵抗体層に対する焼成工程とを別々のェ 程で行うことから、製造工程が煩雑化しやすい等といった問題があった。 Patent Document 2 deals with the point that silver powder leaches out to the surface of a resistor layer, but a decrease in film strength starting from the melting of silver powder, a decrease in adhesion between a resistor layer and an electrode layer, etc. There is no problem recognition. Moreover, although patent document 2 is invention which makes a thermosetting resin temperature a difference with the binder resin contained in the said electrode layer, and the binder resin contained in the said resistor layer, the melting of the silver particle by baking is appropriate. It is necessary to use different binder resins for the electrode layer and the resistor layer, and it is necessary to use a different binder resin. Basically, since the firing step for the electrode layer and the firing step for the resistor layer are performed in separate steps, there is a problem that the manufacturing step is likely to be complicated.

[0013] そこで本発明は上記従来の課題を解決するためのものであり、特に、電極層と抵抗 体層間の密着性を向上させることができ、し力、も電極層及び抵抗体層の膜強度を向 上させることが可能な電子部品およびその製造方法を提供することを目的としている 課題を解決するための手段  Therefore, the present invention is intended to solve the above-mentioned conventional problems, and in particular, the adhesion between the electrode layer and the resistor layer can be improved, and the force of the electrode layer and the film of the resistor layer can be improved. It is an object of the present invention to provide an electronic component capable of improving strength and a method of manufacturing the same.

[0014] 本発明における電子部品は、  The electronic component in the present invention is

積層された電極層及び抵抗体層と、前記電極層及び前記抵抗体層を支持する基 板と、を有して構成され、  It comprises: a stacked electrode layer and a resistor layer; and a substrate for supporting the electrode layer and the resistor layer,

前記電極層は、熱硬化性のバインダー樹脂と、前記バインダー樹脂内に分散した 導電性粒子とを有し、  The electrode layer has a thermosetting binder resin and conductive particles dispersed in the binder resin,

前記導電性粒子は、主成分の銀と、酸化ビスマス、あるいは、カーボン、又は酸化 ビスマス及びカーボンを有してなる複合粉を含むことを特徴とするものである。  The conductive particles are characterized in that they contain silver as a main component, bismuth oxide, carbon, or a composite powder comprising bismuth oxide and carbon.

[0015] 「複合粉」とは、複数種類の粒子を単に混ぜた「混合粉」や「合金」と異なり、粒子 1 個を取り出したときに、その粒に、銀と酸化ビスマス、あるいは、銀とカーボン、又は、 銀と酸化ビスマス及びカーボンとを含んだものである。  [0015] "Composite powder" is different from "mixed powder" or "alloy" in which a plurality of types of particles are simply mixed, and when one particle is taken out, silver and bismuth oxide or silver may be added to the particle. And carbon, or silver and bismuth oxide and carbon.

[0016] 上記銀を主成分とした複合粉は、銀粉に比べて、バインダー樹脂を硬化させるため の焼成温度で溶融しにくい(あるいは不溶である)。したがって従来に比べて前記溶 融による発熱を適切に抑制でき、この結果、前記バインダー樹脂等の分解を抑制で きる。よって、従来に比べて前記電極層と前記抵抗体層の間に分解による隙間が生 じず、また前記電極層が前記抵抗体層を侵食しないため、前記抵抗体層及び電極 層間の密着性を適切に向上させることが出来るとともに、前記抵抗体層及び電極層 の膜強度を向上させることが可能である。  [0016] The composite powder containing silver as a main component is harder to melt (or is insoluble) at a firing temperature for curing the binder resin than silver powder. Accordingly, heat generation due to the melting can be appropriately suppressed as compared with the conventional case, and as a result, decomposition of the binder resin and the like can be suppressed. Therefore, compared with the prior art, no gap due to decomposition occurs between the electrode layer and the resistor layer, and the electrode layer does not erode the resistor layer, so adhesion between the resistor layer and the electrode layer can be reduced. While improving appropriately, it is possible to improve the film strength of the resistor layer and the electrode layer.

[0017] 本発明では、前記電極層および前記抵抗体層は、前記基板内に坦設され、前記 抵抗体層の表面が前記基板の表面と同一面にて現れている形態であることが好まし レ、。これは転写型基板として形成されたものであり、前記抵抗体層の表面を鏡面形 成でき、摺動特性の向上を図ることができて好ましい。さらに前記抵抗体層の厚みを 維持できるため、耐マイグレーション性を向上できる。 In the present invention, preferably, the electrode layer and the resistor layer are carried in the substrate, and the surface of the resistor layer appears in the same plane as the surface of the substrate. Re ,. This is formed as a transfer type substrate, and the surface of the resistor layer can be formed into a mirror surface, which is preferable because sliding characteristics can be improved. Furthermore, the thickness of the resistor layer Because it can be maintained, the migration resistance can be improved.

[0018] また本発明では、前記バインダー樹脂は、アセチレン末端ポリイソイミドオリゴマーを 有して構成されることが好ましい。これにより、ガラス転移温度を高くでき耐熱性を向 上させることが出来る。  In the present invention, the binder resin preferably comprises an acetylene-terminated polyisoimide oligomer. Thereby, the glass transition temperature can be increased, and the heat resistance can be improved.

[0019] 前記抵抗体層は熱硬化性のバインダー樹脂とカーボン粉とを有し、前記抵抗体層 のバインダー樹脂は、前記電極層に含まれるバインダー樹脂と同種であることが好ま しい。前記抵抗体層と前記電極層間の密着性をより適切に向上させることが可能で ある。  The resistor layer preferably includes a thermosetting binder resin and carbon powder, and the binder resin of the resistor layer is preferably the same type as the binder resin contained in the electrode layer. It is possible to more appropriately improve the adhesion between the resistor layer and the electrode layer.

[0020] 本発明における電子部品の製造方法は、以下の工程を有することを特徴とするも のである。  The method of manufacturing an electronic component in the present invention is characterized by having the following steps.

[0021] (a) 転写板上に抵抗体層を形成する工程、  (A) forming a resistor layer on the transfer plate,

(b) 溶媒内に、少なくとも熱硬化性のバインダー樹脂と、主成分の銀と酸化ビスマ ス、あるいは、カーボン、又は酸化ビスマス及びカーボンを有する複合粉とを混合し て成るペースト状の電極層を前記抵抗体層上に形成する工程、  (b) A paste-like electrode layer obtained by mixing, in a solvent, at least a thermosetting binder resin, silver as a main component and bismuth oxide, or carbon, or bismuth oxide and a composite powder containing carbon. Forming on the resistor layer;

(c) 前記電極層を熱処理して、前記溶媒を除去するとともに前記バインダー樹脂 を熱硬化させる工程、  (c) heat treating the electrode layer to remove the solvent and thermally curing the binder resin;

(d) 前記電極層及び抵抗体層を支持する基板を形成した後、前記転写板を剥離 する工程。  (d) A step of peeling off the transfer plate after forming a substrate for supporting the electrode layer and the resistor layer.

[0022] 本発明では、前記(c)工程で、ペースト状の前記電極層のバインダー樹脂を熱硬 ィ匕させるための熱処理を行ったとき、前記複合粉は、銀粉に比べて溶融しにくぐ前 記バインダー樹脂の分解を適切に抑制できる。したがって、前記電極層と前記抵抗 体層の間に分解による隙間を生じたり、前記電極層が前記抵抗体層を侵食する現象 を適切に抑制できる。  In the present invention, when the heat treatment for thermally curing the binder resin of the paste-like electrode layer is performed in the step (c), the composite powder is more likely to melt than the silver powder. The decomposition of the binder resin can be appropriately suppressed. Therefore, it is possible to appropriately suppress the occurrence of a gap due to decomposition between the electrode layer and the resistor layer, and the phenomenon that the electrode layer erodes the resistor layer.

[0023] よって前記(d)工程で、前記転写板を剥離するとき、前記転写板を抵抗体層から適 切に剥離でき、従来のように前記抵抗体層が前記転写板と一緒に剥がれるといった 不具合を抑制できる。このように、本発明では、簡単な製造方法で、転写型基板を安 定して製造することが可能である。  Therefore, when the transfer plate is peeled in the step (d), the transfer plate can be properly peeled from the resistor layer, and the resistor layer is peeled together with the transfer plate as in the prior art. Problems can be suppressed. As described above, in the present invention, it is possible to stably manufacture a transfer substrate by a simple manufacturing method.

[0024] 本発明では、前記(a)工程で、溶媒内に、少なくとも熱硬化性のバインダー樹脂と、 カーボン粉とを混合して成るペースト状の抵抗体層を前記転写板上に形成し、前記 ペースト状の抵抗体層を乾燥させ、 In the present invention, in the step (a), at least a thermosetting binder resin is contained in a solvent. A paste-like resistor layer formed by mixing with carbon powder is formed on the transfer plate, and the paste-like resistor layer is dried.

前記(C)工程での熱処理により、前記抵抗体層のバインダー樹脂を、前記電極層 のバインダー樹脂とともに熱硬化させることが好ましい。本発明では、前記抵抗体層 のバインダー樹脂と前記電極層のバインダー樹脂とを同じ焼成工程で熱硬化させて も、前記複合粉の溶融を適切に抑制でき、そして、このように前記抵抗体層のバイン ダー樹脂と前記電極層のバインダー樹脂とを同じ焼成工程で熱硬化させることで、 製造工程をより容易化できる。  It is preferable to thermally cure the binder resin of the resistor layer together with the binder resin of the electrode layer by the heat treatment in the step (C). In the present invention, even if the binder resin of the resistor layer and the binder resin of the electrode layer are thermally cured in the same firing step, the melting of the composite powder can be appropriately suppressed, and thus the resistor layer is thus obtained. By thermally curing the binder resin of and the binder resin of the electrode layer in the same firing step, the production process can be further facilitated.

[0025] また本発明では、前記電極層に混合されるバインダー樹脂と同種の樹脂を前記抵 抗体層のバインダー樹脂として使用することが、前記電極層と抵抗体層間の密着性 を向上させることが出来るとともに、製造工程をより容易化でき好ましい。  In the present invention, the use of a resin of the same type as the binder resin mixed in the electrode layer as a binder resin for the antibody layer improves the adhesion between the electrode layer and the resistor layer. While being possible, the manufacturing process can be simplified, which is preferable.

発明の効果  Effect of the invention

[0026] 本発明における電子部品は、積層された電極層及び抵抗体層と、前記電極層及 び前記抵抗体層を支持する基板と、を有して構成され、前記電極層は、熱硬化性の バインダー樹脂と、前記バインダー樹脂内に分散した導電性粒子とを有し、前記導 電性粒子は、主成分の銀と、酸化ビスマス、あるいは、カーボン、又は酸化ビスマス 及びカーボンを有してなる複合粉を含むことを特徴とするものである。  The electronic component in the present invention is configured to have a stacked electrode layer and resistor layer, and a substrate supporting the electrode layer and the resistor layer, and the electrode layer is thermally cured. Conductive particles dispersed in the binder resin, and the conductive particles contain silver as a main component and bismuth oxide, or carbon, or bismuth oxide, and carbon. It is characterized by including the following composite powder.

[0027] 上記複合粉は、銀粉に比べて、ノインダー樹脂を硬化させるための焼成温度で溶 融しにくい(あるいは不溶である)。したがって従来に比べて前記溶融による発熱を適 切に抑制でき、この結果、前記バインダー樹脂等の分解を抑制できる。よって、従来 に比べて前記電極層と前記抵抗体層の間に分解による隙間を生じさせず、また前記 電極層が前記抵抗層を侵食しないため、前記抵抗体層及び電極層間の密着性を適 切に向上させることが出来るとともに、前記抵抗体層及び電極層の膜強度を向上さ せることが可能である。  [0027] The above composite powder is less likely to melt (or is insoluble) at a firing temperature for curing Noinda resin, as compared to silver powder. Therefore, the heat generation due to the melting can be appropriately suppressed as compared with the conventional case, and as a result, the decomposition of the binder resin and the like can be suppressed. Therefore, compared with the conventional case, no gap due to decomposition is generated between the electrode layer and the resistor layer, and the electrode layer does not erode the resistor layer, so that the adhesion between the resistor layer and the electrode layer is appropriate. It is possible to improve the resistance and to improve the film strength of the resistor layer and the electrode layer.

[0028] したがって本発明における電子部品は、摺動子が抵抗体層上を摺動する基板であ るとき、摺動特性に優れた高寿命の基板となる。また本発明の電子部品を転写型基 板として製造するとき、転写板を剥離する際に、前記抵抗体層が前記転写板と一緒 に剥がれるといったことがなく安定して転写型基板を製造できる。 発明を実施するための最良の形態 Therefore, when the electronic component in the present invention is a substrate on which the slider slides on the resistor layer, the electronic component is a long-life substrate with excellent sliding characteristics. Further, when the electronic component of the present invention is manufactured as a transfer type substrate, when the transfer plate is peeled off, the transfer type substrate can be stably manufactured without peeling off the resistor layer together with the transfer plate. BEST MODE FOR CARRYING OUT THE INVENTION

[0029] 図 1は本実施の形態として可変抵抗器に用いられる抵抗基板(電子部品)を示す斜 視図、図 2は前記抵抗基板の平面図、図 3は図 2の III一 III線の断面図である。  FIG. 1 is a perspective view showing a resistive substrate (electronic component) used for a variable resistor according to the present embodiment, FIG. 2 is a plan view of the resistive substrate, and FIG. 3 is a III-III line of FIG. FIG.

[0030] この抵抗基板 1は、エポキシ樹脂などで形成された絶縁性の成形基板 2を有してい る。この成形基板 2の中央には回転子が取り付けられる円形の開口部 2aが形成され ている。また成形基板 2の表面 2bには、コモン電極パターン 3、抵抗検出パターン 4、 電極補助パターン 5が形成されており、これらの主な部分は、前記開口部 2aの中心と 同心円のリング状パターンとして形成されている。コモン電極パターン 3には引き出し パターン 3aが連続してこれが成形基板 2の側縁部 2cまで延び、抵抗検出パターン 4 と連続する引き出しパターン 4aと、電極補助パターン 5に連続する引き出しパターン 5aも前記側縁部 2cまで延びてレ、る。  The resistor substrate 1 has an insulating molded substrate 2 formed of an epoxy resin or the like. A circular opening 2a to which a rotor is attached is formed at the center of the molded substrate 2. A common electrode pattern 3, a resistance detection pattern 4 and an electrode auxiliary pattern 5 are formed on the surface 2b of the molded substrate 2, and these main portions are ring-shaped patterns concentric with the center of the opening 2a. It is formed. The common electrode pattern 3 has a continuous lead-out pattern 3a which extends to the side edge 2c of the molded substrate 2, and the lead-out pattern 4a continuous with the resistance detection pattern 4 and the lead-out pattern 5a continuous with the auxiliary electrode pattern 5 Extend to the edge 2c.

[0031] 成形基板 2の前記側縁部 2cからは導電性金属材料で形成された端子 6a, 6b, 6c が突出しており、端子 6aは前記引き出しパターン 3aに重ねられて導通され、端子 6b と端子 6cは、引き出レ ターン 4aと 5aに重ねられてそれぞれ導通されている。  Terminals 6a, 6b and 6c made of a conductive metal material project from the side edge 2c of the molded substrate 2, and the terminal 6a is superimposed on the lead pattern 3a and made conductive, and the terminal 6b and 6b are formed. The terminals 6c are superimposed on the extraction patterns 4a and 5a and are conducted respectively.

[0032] また、前記抵抗検出パターン 4と電極補助パターン 5は、接続パターン 5bにおいて 互いに直列に接続されている。なお、前記電極補助パターン 5は、抵抗検出パター ン 4の一端と端子 6cとを接続する引き回レ、。ターンである。  Further, the resistance detection pattern 4 and the electrode auxiliary pattern 5 are connected in series with each other in the connection pattern 5 b. The electrode auxiliary pattern 5 is a wire-wound reed that connects one end of the resistance detection pattern 4 to the terminal 6c. It is a turn.

[0033] 図 3は、図 2の ΠΙ_ΠΙ線で切断した断面を示しており、これには抵抗検出パターン  [0033] FIG. 3 shows a cross section taken along a line ΠΙ_ΠΙ in FIG.

4の一部およびその引き出しパターン 4aと、前記電極補助パターン 5の一部が現れ ている。図 3に示すように、各パターンは、抵抗体層 21のみで形成されている領域と 、前記抵抗体層 21の基板内方側に電極層 22が積層された領域とを有している。  A part of 4 and its drawing pattern 4 a and a part of the electrode auxiliary pattern 5 appear. As shown in FIG. 3, each pattern has a region formed of only the resistor layer 21 and a region in which the electrode layer 22 is stacked on the substrate inward side of the resistor layer 21.

[0034] 図 2では、抵抗体層 21のみで形成されている領域にドットを付して示しており、抵抗 体層 21と電極層 22とが積層されている領域にハッチングを付して示している。前記 コモン電極パターン 3およびその引き出しパターン 3aは、その全域で抵抗体層 21と 電極層 22とが積層されている。前記抵抗検出パターン 4では、角度 Θの範囲が抵抗 体層 21のみで形成されており、その両端部および引き出しパターン 4aは、抵抗体層 21と電極層 22とが積層されている。また、電極補助パターン 5は、引き出しパターン 5aおよび接続パターン 5bを含むその全域で、抵抗体層 21と電極層 22とが積層され ている。 In FIG. 2, the region formed of only the resistor layer 21 is shown with dots, and the region where the resistor layer 21 and the electrode layer 22 are stacked is shown with hatching. ing. The resistor layer 21 and the electrode layer 22 are stacked over the entire area of the common electrode pattern 3 and the drawing pattern 3a thereof. In the resistance detection pattern 4, the range of the angle Θ is formed only by the resistor layer 21, and the resistor layer 21 and the electrode layer 22 are laminated on both ends and the lead pattern 4 a. The electrode auxiliary pattern 5 is formed by laminating the resistor layer 21 and the electrode layer 22 over the entire area including the lead pattern 5a and the connection pattern 5b. ing.

[0035] すなわち、前記抵抗検出パターン 4の角度 Θの範囲は、摺動子の摺動位置に応じ た抵抗値の変化を検出するために抵抗体層 21のみで形成されている力 S、それ以外 のパターンは電極層 22で形成されているとともに、この電極層 22が表面 2bに露出し なレ、ように抵抗体層 21で覆われた構造である。  That is, the range of the angle Θ of the resistance detection pattern 4 is a force S formed only by the resistor layer 21 in order to detect a change in resistance value according to the sliding position of the slider, The other patterns are formed by the electrode layer 22, and the electrode layer 22 is not exposed to the surface 2b, and is covered with the resistor layer 21 as shown in FIG.

[0036] 前記端子 6a, 6b, 6cは、成形基板 2内に埋設されており、前記引き出レ、 °ターン 3 a, 4a, 5aにて基板内側に形成されている前記電極層 22に、前記端子 6a, 6b, 6c のそれぞれが、例えば銀の接着層(図示せず)を介して接合されている。  The terminals 6a, 6b, 6c are embedded in the molded substrate 2, and the electrode layer 22 formed on the inner side of the substrate by the pullouts, the turns 3a, 4a, 5a, Each of the terminals 6a, 6b, 6c is joined, for example, via an adhesive layer (not shown) of silver.

[0037] 前記開口部 2aには回転子(図示せず)が取り付けられ、この回転子に取り付けられ た導電性の摺動子(図示せず)力 前記コモン電極パターン 3の表面と抵抗検出バタ ーン 4の表面とを導通させた状態で摺動する。その結果、端子 6aと端子 6bとの間、お よび端子 6aと端子 6cとの間で、摺動子の摺動位置に対応した抵抗変化を検出でき るようになっている。  A rotor (not shown) is attached to the opening 2a, and a conductive slider (not shown) attached to the rotor is a force of the surface of the common electrode pattern 3 and a resistance detection butter. Slide in a state where it is conducted to the surface of the run 4. As a result, a change in resistance corresponding to the sliding position of the slider can be detected between the terminals 6a and 6b and between the terminals 6a and 6c.

[0038] 本実施形態では、前記電極層 22は、熱硬化性のバインダー樹脂と、前記バインダ 一樹脂内に分散した導電性粒子とを有し、前記導電性粒子には、主成分の銀と、酸 ィ匕ビスマス、あるいは、カーボン、又は酸化ビスマス及びカーボンと、を有してなる複 合粉が用いられている。ここで「複合粉」とは、単に銀粉と酸化ビスマス粉を混ぜたよ うな「混合粉」や複数の金属が溶け合った「合金」と異なり、粒子 1個を取り出したとき に、その粒に、銀と酸化ビスマス、あるいは、銀とカーボン、又は銀と酸化ビスマス及 びカーボンを含んだものである。  In the present embodiment, the electrode layer 22 includes a thermosetting binder resin and conductive particles dispersed in the binder resin, and the conductive particles contain silver as a main component. A composite powder comprising bismuth oxide, carbon, or bismuth oxide and carbon is used. Here, “composite powder” is different from “mixed powder” in which silver powder and bismuth oxide powder are simply mixed and “alloy” in which a plurality of metals are dissolved, and when one particle is taken out, silver is added to the particles. And bismuth oxide, or silver and carbon, or silver and bismuth oxide and carbon.

[0039] 銀と酸化ビスマスからなる複合粉、銀とカーボンからなる複合粉であってもよいが、 より好ましいのは、銀、酸化ビスマス及びカーボンを全て含んだ複合粉である。例え ば主成分としての Agは 79at% (原子%)程度、酸化ビスマス(Bi O )は 16at%程度  A composite powder consisting of silver and bismuth oxide or a composite powder consisting of silver and carbon may be used, but a composite powder containing all of silver, bismuth oxide and carbon is more preferable. For example, about 79 at% (atomic%) of Ag as a main component and about 16 at% of bismuth oxide (Bi 2 O 3)

2 3  twenty three

、カーボンは 5at%程度含有されている。  And carbon at about 5 at%.

[0040] なお前記電極層 22には前記複合粉とともに、前記複合粉以外の導電性粒子が含 まれていてもよレ、。前記導電性粒子は、前記電極層 22中に 5〜 50体積%含まれて いることが好ましい。前記導電性粒子が 5体積%より小さいと、前記電極層 22の比抵 抗が大きくなり、抵抗体層 21に比べて十分に比抵抗を下げることが出来なくなる。ま た前記導電性粒子が 50体積%より大きいと、前記バインダー樹脂の体積比率が小さ くなりすぎ、膜強度が低下し好ましくない。したがって、前記導電性粒子は、 5〜50体 積%含まれてレ、ることが好ましレ、。 The electrode layer 22 may contain conductive particles other than the composite powder together with the composite powder. The conductive particles are preferably contained in the electrode layer 22 in an amount of 5 to 50% by volume. If the content of the conductive particles is less than 5% by volume, the specific resistance of the electrode layer 22 becomes large, and the specific resistance can not be sufficiently lowered compared to the resistor layer 21. The When the conductive particles are more than 50% by volume, the volume ratio of the binder resin becomes too small, and the film strength is unfavorably lowered. Therefore, it is preferable that the conductive particles contain 5 to 50% by volume.

[0041] 前記バインダー樹脂は、ポリイミド樹脂、ビスマレイミド樹脂、エポキシ樹脂、フエノー ル樹脂、アクリル樹脂等の熱硬化性樹脂から選択されるが、特に、アセチレン末端ポ リイソイミドオリゴマーを含むことがガラス転移温度 (Tg)を高くでき耐熱性を向上させ る上で好ましい。 The binder resin is selected from thermosetting resins such as polyimide resin, bismaleimide resin, epoxy resin, phenol resin, and acrylic resin, and in particular, it is preferable that the glass contains an acetylene-terminated polyisoimide oligomer. It is preferable to increase the transition temperature (Tg) and improve the heat resistance.

[0042] 前記電極層 22は、溶媒中に、前記バインダー樹脂及び導電性粒子等が混合され て成る導電性ペーストを所定のパターン形状にスクリーン印刷し熱処理工程により、 前記溶媒を除去するとともに、前記バインダー樹脂を熱硬化したものである。  The electrode layer 22 is formed by screen printing a conductive paste obtained by mixing the binder resin, conductive particles and the like in a solvent in a predetermined pattern shape, and removing the solvent by a heat treatment step, and The binder resin is thermally cured.

[0043] 前記抵抗体層 21は、熱硬化性のバインダー樹脂の内部に導電粉としてカーボン粉 が分散したものである。前記カーボン粉は、カーボンブラック、グラフアイト、カーボン ファイバー、カーボンビーズ、カーボンナノチューブ等であり、特に限定されない。  The resistor layer 21 is obtained by dispersing carbon powder as a conductive powder inside a thermosetting binder resin. The carbon powder is carbon black, graphite, carbon fiber, carbon beads, carbon nanotubes, etc., and is not particularly limited.

[0044] 前記抵抗体層 21を構成するバインダー樹脂は、前記電極層 22を構成するバイン ダー樹脂と同様に、例えば、ポリイミド樹脂、ビスマレイミド樹脂、エポキシ樹脂、フエノ ール樹脂、アクリル樹脂等の熱硬化性樹脂から選択される。  The binder resin constituting the resistor layer 21 is, for example, a polyimide resin, a bismaleimide resin, an epoxy resin, a phenol resin, an acrylic resin, etc., similarly to the binder resin constituting the electrode layer 22. It is selected from thermosetting resins.

[0045] 前記抵抗体層 21のバインダー樹脂と前記電極層 22のバインダー樹脂とは同種で あること力 前記抵抗体層 21と前記電極層 22間の密着性を向上させる上で好ましい 。ここで「同種」とは、同じ樹脂である場合のみならず、前記樹脂の誘導体も含む。ま た前記電極層 22のバインダー樹脂と同様、前記抵抗体層 21のバインダー樹脂も、 アセチレン末端ポリイソイミドオリゴマーを含むことがガラス転移温度 (Tg)を高くでき 耐熱性を向上させる上で好ましい。  The binder resin of the resistor layer 21 and the binder resin of the electrode layer 22 are the same type. This is preferable in order to improve the adhesion between the resistor layer 21 and the electrode layer 22. Here, "homogeneous" includes not only the case of the same resin but also derivatives of the resin. Further, as with the binder resin of the electrode layer 22, the binder resin of the resistor layer 21 preferably also contains an acetylene-terminated polyisoimide oligomer in order to increase the glass transition temperature (Tg) and improve the heat resistance.

[0046] また、前記抵抗体層 21の比抵抗は、前記電極層 22の比抵抗に比べて充分に大き くなつている。  Further, the specific resistance of the resistor layer 21 is sufficiently larger than the specific resistance of the electrode layer 22.

[0047] 前記抵抗体層 21は、溶媒中に、前記バインダー樹脂及びカーボン粉等が混合さ れて成る抵抗ペーストを所定のパターン形状にスクリーン印刷し熱処理工程により、 前記溶媒を除去するとともに、前記バインダー樹脂を熱硬化したものである。  The resistor layer 21 is screen-printed in a predetermined pattern shape of a resistive paste formed by mixing the binder resin, carbon powder and the like in a solvent, and the solvent is removed by a heat treatment step, and The binder resin is thermally cured.

[0048] なお前記抵抗体層 21に含まれる導電性粒子は、カーボン粉以外であってもよいが 、前記カーボン粉であることが、電気的安定性に優れ、し力も腐食しにくい等、耐環 境性にも優れた抵抗体層 21を形成できる点で好ましい。 The conductive particles contained in the resistor layer 21 may be other than carbon powder, The carbon powder is preferable in that the resistor layer 21 having excellent electrical stability, resistance to corrosion and the like and excellent in environmental resistance can be formed.

[0049] 図 3に示すように前記抵抗体層 21及び、前記電極層 22は、前記成形基板 2内に埋 設されているとともに、前記抵抗体層 21の表面 21aは、前記成形基板 2の表面 2bと 同一面にて現れている。図 3に示す抵抗基板 1は、後述する製造方法で説明する転 写型抵抗基板であり、前記抵抗体層 21の表面 2 laは、鏡面で形成されている。よつ て前記抵抗基板 1は、摺動特性に優れ、高寿命を得ることが出来る。  As shown in FIG. 3, the resistor layer 21 and the electrode layer 22 are embedded in the molded substrate 2, and the surface 21 a of the resistor layer 21 is the same as that of the molded substrate 2. It appears in the same plane as surface 2b. The resistor substrate 1 shown in FIG. 3 is a transfer-type resistor substrate which will be described later in the manufacturing method, and the surface 2 la of the resistor layer 21 is formed of a mirror surface. Thus, the resistance substrate 1 is excellent in sliding characteristics and can obtain a long life.

[0050] 本実施形態では、前記電極層 22に含有される導電性粒子が、主成分の銀と、酸化 ビスマス、あるいは、カーボン、又は酸化ビスマスおよびカーボンと、を有してなる複 合粉である。前記複合粉は、銀粉に比べて、バインダー樹脂を硬化させるための焼 成温度で溶融しにくい(あるいは不溶である)。  In the present embodiment, the conductive particles contained in the electrode layer 22 are composite powders comprising silver as the main component, bismuth oxide or carbon, or bismuth oxide and carbon. is there. The composite powder is less soluble (or insoluble) at the baking temperature for curing the binder resin than silver powder.

[0051] よって前記溶融による発熱を適切に抑制でき、この結果、前記バインダー樹脂や力 一ボン粉等の分解を抑制することが可能である。  Therefore, the heat generation due to the melting can be appropriately suppressed, and as a result, it is possible to suppress the decomposition of the binder resin, the carbon powder and the like.

[0052] したがって、従来に比べて、前記電極層 22が前記抵抗体層 21内へ侵入せず、前 記電極層 22と前記抵抗体層 21間の密着性を適切に向上させることができるとともに 、前記電極層 22及び抵抗体層 21の膜強度を従来に比べて向上できる。  Therefore, while the electrode layer 22 does not intrude into the resistor layer 21 as compared with the conventional case, the adhesion between the electrode layer 22 and the resistor layer 21 can be appropriately improved. The film strength of the electrode layer 22 and the resistor layer 21 can be improved as compared with the prior art.

[0053] 前記密着性の向上により、転写型抵抗基板の製造過程において、転写板を剥離す るときに前記抵抗体層 21が前記転写板と一緒に剥がれてしまうことを適切に防止で きる。  By the improvement of the adhesion, it is possible to appropriately prevent the resistance layer 21 from peeling off together with the transfer plate when the transfer plate is peeled off in the process of manufacturing the transfer type resistance substrate.

[0054] また前記密着性及び膜強度の向上により、摺動子を前記抵抗基板 1の抵抗体層 2 1上に繰り返し摺動させても、磨耗しにくぐまた前記抵抗体層 21が使用時に、抵抗 基板 1から剥がれるといったことも無く摺動特性に優れた抵抗基板 1に出来る。し力も 前記電極層 22の前記抵抗体層 21内への侵入を抑制出来ることで耐マイグレーショ ン性も向上できる。  Further, even if the slider is repeatedly slid on the resistor layer 21 of the resistor substrate 1 due to the improvement of the adhesion and the film strength, the slider layer is not easily worn and the resistor layer 21 is used at the time of use. The resistance substrate 1 has excellent sliding characteristics without being peeled off from the resistance substrate 1. The migration resistance can also be improved by suppressing the penetration of the electrode layer 22 into the resistor layer 21.

[0055] 次に、前記抵抗基板 1の製造方法について説明する。なおこの明細書において「 ペースト」とはバインダー樹脂が熱硬化されてレ、なレ、状態を言う。  Next, a method of manufacturing the resistance substrate 1 will be described. In this specification, the term "paste" refers to a binder resin that has been heat-cured to form a state.

[0056] まず、第 1の溶媒に、第 1のバインダー樹脂を溶解させ、これに、例えばカーボンブ ラックと、カーボンファイバー(平均粒子径 3〜30 μ mのカーボンファイバーの粉砕粉 )を混合させた抵抗ペーストを生成する。前記第 1のバインダー樹脂は、 30〜95体積 %程度、カーボンブラック及びカーボンファイバーは、合わせて 5〜70体積%程度で ある(溶媒を除いた第 1のバインダー樹脂、カーボンブラック、カーボンファイバーの 合計が 100体積%)。 First, the first binder resin is dissolved in a first solvent, and for example, carbon black and carbon fiber (ground powder of carbon fiber having an average particle diameter of 3 to 30 μm) are dissolved therein. ) To form a resistive paste. The first binder resin is about 30 to 95% by volume, and the carbon black and the carbon fiber are about 5 to 70% by volume in total (the total of the first binder resin excluding the solvent, carbon black, and carbon fiber Is 100% by volume).

[0057] たとえば黄銅板で形成された転写板 30 (図 4参照)を用意する。前記転写板 30の 表面は鏡面加工されてレ、る。  Prepare a transfer plate 30 (see FIG. 4) formed of, for example, a brass plate. The surface of the transfer plate 30 is mirror finished.

[0058] 前記転写板 30の表面に、抵抗体層 21のパターンの形状(図 2のドットとハッチング の双方で示す全パターン)を製版するステンレス製のマスクを用レ、、前記転写板 30 の表面にペースト状の前記抵抗体層 21をスクリーン印刷する。  A stainless steel mask for making the shape of the pattern of the resistor layer 21 (all patterns shown by both dots and hatching in FIG. 2) on the surface of the transfer plate 30 is used for the transfer plate 30; The paste-like resistor layer 21 is screen printed on the surface.

[0059] 印刷後に、乾燥炉を用いて、前記スクリーン印刷したペースト状の抵抗体層 21を 1 00〜250°Cで 10〜60分間乾燥させて、前記第 1の溶媒を蒸発させて除去する。な おこの乾燥工程の一部(完全乾燥)は、後のペースト状電極層 22に対する乾燥と同 工程で行ってもよい。  After printing, the screen-printed paste-like resistor layer 21 is dried at 100 to 250 ° C. for 10 to 60 minutes using a drying oven to evaporate and remove the first solvent. . A part of this drying step (complete drying) may be performed in the same step as drying for the paste-like electrode layer 22 later.

[0060] 次に、前記抵抗体層 21の上に、ペースト状の電極層 22をスクリーン印刷でパター ン形成する。  Next, a paste-like electrode layer 22 is pattern-formed on the resistor layer 21 by screen printing.

[0061] 電極ペーストは、第 2の溶媒中に、第 2のバインダー樹脂及び、主成分の銀と、酸 ィ匕ビスマス、あるいは、カーボン、又は酸化ビスマス及びカーボンとを有する複合粉 等の導電性粒子を混合したものである。前記第 2のバインダー樹脂は、 50〜95体積 %程度、導電性粒子は、 5〜50体積%程度である(溶媒を除いた第 2のバインダー 樹脂、前記導電性粒子の合計が 100体積%)。  [0061] The electrode paste is a conductive powder such as a second binder resin, silver as a main component, and a composite powder comprising silver as a main component, bismuth oxide, carbon, or bismuth oxide and carbon in a second solvent. It is a mixture of particles. The second binder resin is about 50 to 95% by volume, and the conductive particles are about 5 to 50% by volume (the second binder resin excluding the solvent, the total of the conductive particles is 100% by volume) .

[0062] 図 2においてハッチングで示す領域のパターンを製版するマスクで、前記転写板 3 0と抵抗体層 21を覆い、乾燥した前記抵抗体層 21の表面にペースト状の電極層 22 をパターン形成する。  The transfer plate 30 and the resistor layer 21 are covered with a mask for making a pattern of a hatched area in FIG. 2, and a paste-like electrode layer 22 is formed on the surface of the resistor layer 21 which has been dried. Do.

[0063] 印刷後に、乾燥炉を用いて、前記スクリーン印刷したペースト状の電極層 22を 100 〜260°Cで 10〜60分間乾燥させて、前記第 2の溶媒を蒸発させて除去する。  After printing, the screen-printed paste-like electrode layer 22 is dried at 100 to 260 ° C. for 10 to 60 minutes using a drying oven to evaporate and remove the second solvent.

[0064] 次に、焼成炉において 400°C程度の焼成温度で 1〜2時間加熱し、前記第 1のバイ ンダ一樹脂及び第 2のバインダー樹脂を同時に熱硬化させる。これにより前記抵抗 体層 21は熱硬化したバインダー樹脂中にカーボン粉が分散した膜構造になり、前記 電極層 22は熱硬化したバインダー樹脂中に複合粉が分散した膜構造になる。 Next, the first binder resin and the second binder resin are simultaneously thermally cured by heating in a firing furnace at a firing temperature of about 400 ° C. for 1 to 2 hours. As a result, the resistor layer 21 has a film structure in which carbon powder is dispersed in the thermally cured binder resin. The electrode layer 22 has a film structure in which the composite powder is dispersed in the thermally cured binder resin.

[0065] ここで第 1の溶媒及び第 2の溶媒には、酢酸カルビトール、メチルカルビトール、ェ チノレカノレビトーノレ、ブチルカルビトール、モノグライム、ジグライム、メチルトリグライム 等を使用できる。 Here, as the first solvent and the second solvent, carbitol acetate, methyl carbitol, ethylolecanolebitone, butyl carbitol, monoglyme, diglyme, methyltriglyme and the like can be used.

[0066] また第 1のバインダー樹脂及び第 2のバインダー樹脂は同種であることが、前記第 1 のバインダー樹脂及び第 2のバインダー樹脂の硬化温度を同じ力あるいは近レ、温度 にでき、前記第 1のバインダー樹脂及び第 2のバインダー樹脂を同じ焼成工程で熱 硬化でき好ましい。前記第 1のバインダー樹脂と第 2のバインダー樹脂の硬化温度が 大きく離れていると、両方を適切に熱硬化させるには、抵抗体層 21に対する焼成温 度と、ペースト状の電極層 22に対する焼成温度とを別々に制御することが必要であり 、製造工程が煩雑化する。したがって第 1のバインダー樹脂及び第 2のバインダー樹 脂を同種にし、前記第 1のバインダー樹脂及び第 2のノインダー樹脂を同じ焼成ェ 程にて熱硬化させることが好ましい。また第 1のバインダー樹脂と第 2のバインダー榭 脂を同種にすることで、密着性を向上させることが出来る。前記第 1のバインダー樹 脂及び第 2のノくインダー樹脂には、ポリイミド樹脂、ビスマレイミド樹脂、エポキシ樹脂 、フエノール樹脂、アクリル樹脂等の熱硬化性樹脂を選択できるが、これらに限定さ れるものでない。なお前記バインダー樹脂に、アセチレン末端ポリイソイミドオリゴマー を含むことがガラス転移温度 (Tg)を高くでき耐熱性を向上させる上で好ましい。  The first binder resin and the second binder resin may be the same type, and the curing temperature of the first binder resin and the second binder resin may be the same or close to each other, and the temperature may be the same. The binder resin of 1 and the second binder resin can be preferably thermally cured in the same baking step. If the curing temperature of the first binder resin and the second binder resin are largely separated, the firing temperature for the resistor layer 21 and the firing for the paste-like electrode layer 22 can be appropriately set in order to thermally cure both of them. It is necessary to control the temperature separately, which complicates the manufacturing process. Therefore, it is preferable to make the first binder resin and the second binder resin the same, and to thermally cure the first binder resin and the second Noinder resin in the same baking process. Further, by making the first binder resin and the second binder resin the same type, the adhesion can be improved. As the first binder resin and the second binder resin, thermosetting resins such as polyimide resin, bismaleimide resin, epoxy resin, phenol resin and acrylic resin can be selected, but are limited thereto Not It is preferable to include an acetylene-terminated polyisoimide oligomer in the binder resin in order to increase the glass transition temperature (Tg) and improve the heat resistance.

[0067] 前記電極層 22中に含まれる銀と、酸化ビスマス、あるいは、カーボン、又は酸化ビ スマス及びカーボンとを有して成る複合粉の溶融温度は、前記バインダー樹脂の硬 化温度より高くなつている。  The melting temperature of the composite powder comprising silver, bismuth oxide, carbon, or bismuth oxide and carbon contained in the electrode layer 22 is higher than the curing temperature of the binder resin. ing.

[0068] 本実施形態における前記複合粉による電極ペーストは、後述する実施例の実験結 果にも示すように、 440°C前後に溶融ピークを持っため、 400°C前後の熱処理によつ ても溶融しにくい。あるいは不溶である。ポリイミド樹脂の硬化温度は、 300°C〜380 。C程度、ビスマレイミド樹脂の硬化温度は 350°C程度、アセチレン末端ポリイソイミド オリゴマーの硬化温度は、 300°C〜400°C程度であるから、各熱硬化性樹脂の硬化 温度にて熱処理を施しても、前記複合粉の溶融を適切に抑制することが出来る。  The electrode paste of the composite powder in the present embodiment has a melting peak at around 440 ° C. as shown in the experimental results of the examples described later, so heat treatment at around 400 ° C. is preferable. It is also difficult to melt. Or it is insoluble. The curing temperature of the polyimide resin is 300 DEG C. to 380 DEG. C, the curing temperature of the bismaleimide resin is about 350 ° C, and the curing temperature of the acetylene-terminated polyisoimide oligomer is about 300 ° C to 400 ° C, so heat treatment is performed at the curing temperature of each thermosetting resin. Also, the melting of the composite powder can be appropriately suppressed.

[0069] なおポリイミド樹脂のガラス転移温度 Tgは、 300。C程度、ビスマレイミド樹脂のガラ ス転移温度 Tgは、 250〜300°C程度、アセチレン末端ポリイソイミドオリゴマーのガラ ス転移温度 Tgは、 300°C〜350°C程度である。 The glass transition temperature Tg of the polyimide resin is 300. C degree, a glass of bismaleimide resin The glass transition temperature Tg is about 250 to 300 ° C., and the glass transition temperature Tg of the acetylene-terminated polyisoimide oligomer is about 300 ° C. to 350 ° C.

[0070] 次に図 4工程では、各引き出しパターン 3a, 4a, 5aの部分の前記電極層 22の表面 に図示しなレ、端子接着層(導電性接着層)を形成する。  Next, in the process of FIG. 4, a terminal adhesive layer (conductive adhesive layer) is formed on the surface of the electrode layer 22 in the portion of each lead pattern 3a, 4a, 5a.

[0071] この工程では、前記電極層 22の表面にスクリーン印刷によりペースト状の端子接着 層を形成する。例えば、ペースト状の前記端子接着層は、酢酸カルビトールなどから なる溶剤に、 20体積%の銀粉と、硬化剤として 20体積%のフエノール樹脂とアミン化 合物、主剤として 60体積%のエポキシ樹脂を混合させたものである(ただし、溶媒を 除いた合計が 100体積%)。そして、乾燥炉において 80°Cで 10分間乾燥させ、端子 接着層内の溶媒を蒸発させて除去する。  In this step, a paste-like terminal adhesive layer is formed on the surface of the electrode layer 22 by screen printing. For example, in the paste-like terminal adhesive layer, a solvent comprising carbitol acetate etc., 20% by volume of silver powder, 20% by volume of phenol resin and amine compound as a curing agent, 60% by volume of epoxy resin as a main agent (The total volume excluding solvent is 100% by volume). Then, it is dried in an oven at 80 ° C. for 10 minutes to evaporate and remove the solvent in the terminal adhesive layer.

[0072] 次に図 5に示すように、前記転写板 30上を金型 40で覆う。このとき引き出しパター ン 3a, 4a, 5aの電極層 22の表面にペースト状の前記端子接着層を介して端子 6a, 6b, 6cを設置する。そして、前記金型 40のキヤビティ 41に溶融状態のエポキシ樹脂 成形材料を注入する。  Next, as shown in FIG. 5, the upper surface of the transfer plate 30 is covered with a mold 40. At this time, the terminals 6a, 6b, 6c are placed on the surfaces of the electrode layers 22 of the lead patterns 3a, 4a, 5a via the paste-like terminal adhesive layers. Then, a molten epoxy resin molding material is injected into the cavity 41 of the mold 40.

[0073] 金型 40の温度は 160〜200°Cであり、この金型の熱によって前記端子接着層の硬 化剤であるフエノール樹脂およびアミン化合物と主剤のエポキシ樹脂とが熱硬化して 、端子 6a, 6b, 6cが引き出しパターン 3a, 4a, 5aにおいて前記端子接着層を介して 電極層 22に接着される。  The temperature of the mold 40 is 160 to 200 ° C., and the heat of the mold thermally cures the phenol resin and amine compound, which are curing agents of the terminal adhesive layer, and the epoxy resin of the main agent, The terminals 6a, 6b, 6c are bonded to the electrode layer 22 through the terminal adhesive layer in the lead patterns 3a, 4a, 5a.

[0074] また、前記エポキシ樹脂成形材料が硬化して成形基板 2が形成される。そして、金 型 40から抜き出して、図 6に示すように、転写板 30を前記成形基板 2から剥離するこ とで、前記抵抗基板 1が完成する。  Further, the epoxy resin molding material is cured to form a molded substrate 2. Then, the resistance plate 1 is completed by removing the transfer plate 30 from the molded substrate 2 by taking it out of the mold 40 and as shown in FIG.

[0075] 本実施形態の製造方法では、簡単な製造方法で、転写型基板を安定して製造す ることが可能である。すなわち従来では、焼成工程により、前記電極層 22が前記抵 抗体層 21を侵食してしまい、これにより、前記電極層 22と前記抵抗体層 21の間に熱 分解による隙間が発生し密着性が低下する。これにより図 6に示す前記転写板 30を 抵抗基板 1から剥離するときに、前記転写板 30と前記抵抗体層 21間の密着力のほう 、前記電極層 22と前記抵抗体層 21間の密着力より強くなるために、前記転写板 3 0と一緒に前記抵抗体層 21が剥がれやすかつたが、本実施形態では、前記電極層 2 2の前記抵抗体層 21内への浸食現象を適切に抑制できるので、従来に比べて前記 抵抗体層 21と前記電極層 22間の密着性が低下しなレ、ため、前記電極層 22と前記 抵抗体層 21間の密着力は前記転写板 30と前記抵抗体層 21間の密着力よりも強く することが出来る。 According to the manufacturing method of the present embodiment, it is possible to stably manufacture a transfer substrate by a simple manufacturing method. That is, conventionally, the electrode layer 22 corrodes the resistive layer 21 in the firing step, whereby a gap is generated between the electrode layer 22 and the resistive layer 21 due to thermal decomposition, and the adhesion is improved. descend. Thus, when the transfer plate 30 shown in FIG. 6 is peeled off from the resistance substrate 1, the adhesion between the transfer plate 30 and the resistor layer 21, the adhesion between the electrode layer 22 and the resistor layer 21. Although the resistor layer 21 tends to peel off together with the transfer plate 30 in order to become stronger than the force, in the present embodiment, the electrode layer 2 Since it is possible to appropriately suppress the erosion phenomenon into the resistor layer 21 of the second embodiment, the adhesion between the resistor layer 21 and the electrode layer 22 is not reduced compared to the prior art. The adhesion between the resistor layers 21 can be made stronger than the adhesion between the transfer plate 30 and the resistor layers 21.

[0076] したがって前記転写板 30を抵抗基板 1から剥離するときに、前記転写板 30だけを 適切に前記抵抗基板 1から剥離でき、前記抵抗体層 21が前記転写板 30と一緒に剥 がれることを適切に防止できる。  Therefore, when the transfer plate 30 is peeled from the resistance substrate 1, only the transfer plate 30 can be appropriately peeled from the resistance substrate 1, and the resistor layer 21 is peeled together with the transfer plate 30. Can be properly prevented.

[0077] 前記転写板 30の表面は鏡面加工されているため前記転写板 30の表面に直接形 成された前記抵抗体層 21の面 (摺動面)も鏡面にて形成されており、摺動特性に優 れた抵抗基板 1を適切且つ容易に製造できる。  Since the surface of the transfer plate 30 is mirror-finished, the surface (sliding surface) of the resistor layer 21 formed directly on the surface of the transfer plate 30 is also formed as a mirror surface. The resistance substrate 1 excellent in dynamic characteristics can be manufactured appropriately and easily.

[0078] 従来における電極層の浸食現象は抵抗体層の厚みを浸食し、電極層が表面へ露 出する場合や、少なくとも局部的に膜厚の薄い部分ができるため耐マイグレーション 性能を劣化させていたが、実施形態ではこの浸食現象がなく抵抗体層の膜厚が変わ らないため耐マイグレーション†生が大幅に向上している。  In the conventional erosion of the electrode layer, the thickness of the resistor layer is eroded, and the migration resistance performance is degraded when the electrode layer is exposed to the surface, or at least a locally thin portion is formed. However, in the embodiment, this corrosion phenomenon does not occur and the film thickness of the resistor layer does not change, so that the migration resistance is significantly improved.

[0079] また本実施形態では、抵抗体層 21を構成するバインダー樹脂と、電極層 22を構成 するバインダー樹脂とを同じ焼成工程時に、同時に熱硬化させることが出来るから製 造工程を容易化できる。  Further, in the present embodiment, since the binder resin forming the resistor layer 21 and the binder resin forming the electrode layer 22 can be simultaneously thermally cured in the same baking step, the manufacturing process can be facilitated. .

[0080] 他の実施形態としては、例えば基板の平坦な表面に、電極層と抵抗体層とをスクリ ーン印刷'焼成して所定のパターン形状に積層形成した構造を提示できる。かかる 場合、電極層及び抵抗体層を基板側へ転写するわけでないため、転写板を剥離す るときに前記抵抗体層が前記転写板と一緒に剥がれてしまうといった不具合がそもそ も生じ得なレヽが、前記電極層と抵抗体層の間に熱分解による隙間が生じなレ、ため密 着性、及び電極層及び抵抗体層の膜強度を適切に向上させることが出来るから、上 記した他の実施形態においても、摺動特性に優れ、高寿命、耐マイグレーション性に 優れた抵抗基板を形成できる。  As another embodiment, for example, it is possible to present a structure in which an electrode layer and a resistor layer are screen-printed and fired in a predetermined pattern shape on a flat surface of a substrate. In such a case, since the electrode layer and the resistor layer are not transferred to the substrate side, when the transfer plate is peeled off, the problem that the resistor layer is peeled together with the transfer plate may not occur. Since there is no gap due to thermal decomposition between the electrode layer and the resistor layer, it is possible to appropriately improve the adhesion and the film strength of the electrode layer and the resistor layer, as described above. Also in the other embodiments, it is possible to form a resistance substrate which is excellent in sliding characteristics, long in life, and excellent in migration resistance.

また、抵抗体層と電極層とが逆に積層される構造を排除するものでない。  Moreover, it does not exclude the structure by which a resistor layer and an electrode layer are laminated | stacked reversely.

[0081] なお、本発明の抵抗基板 1は、図 1と図 2に示すような回転式可変抵抗器用のほか に、直線的にスライドするスライド式可変抵抗器、その他の抵抗センサーなどに使用 すること力 Sできる。また、導電層としての電極層に、抵抗体層を保護層(オーバーコー ト層)として積層してなるくし歯形状コードパターンを基板 (絶縁基板)に支持させるよ うにしてもよい。この場合には、本発明をエンコーダ基板に適用したものとなる。 The resistance substrate 1 of the present invention is used not only for the rotary variable resistor as shown in FIG. 1 and FIG. 2, but also for a sliding variable resistor that slides linearly, other resistance sensors, etc. It is possible to do S. Further, a comb tooth shaped code pattern formed by laminating a resistor layer as a protective layer (overcoat layer) on an electrode layer as a conductive layer may be supported on a substrate (insulating substrate). In this case, the present invention is applied to the encoder substrate.

実施例  Example

[0082] 図 7に示すように、基板(転写板)上に抵抗体層を形成し、前記抵抗体層上に電極 層を形成したものを実施例及び比較例の夫々におレ、て形成した。  As shown in FIG. 7, a resistor layer is formed on a substrate (transfer plate), and an electrode layer is formed on the resistor layer and formed in each of the example and the comparative example. did.

[0083] まず比較例では、前記電極層をバインダー樹脂と銀粉とを有して形成し、実施例で は、前記電極層を、ノくインダー樹脂と、主成分の銀、酸化ビスマス及びカーボンから 成る複合粉とで形成した。なお実施例及び比較例における抵抗体層は同じものであ り、バインダー樹脂とカーボン粉とで形成されている。  First, in the comparative example, the electrode layer is formed to have a binder resin and silver powder, and in the example, the electrode layer is formed of an inorganic resin, silver as main components, bismuth oxide, and carbon. To form a composite powder. The resistor layers in the examples and comparative examples are the same, and are formed of a binder resin and carbon powder.

[0084] まず比較例の電極層に使用したバインダー樹脂はアセチレン末端ポリイソイミドオリ ゴマーであり、前記銀粉は、 30体積%程度、バインダー樹脂は 70体積%程度入って いる。  First, the binder resin used in the electrode layer of the comparative example is an acetylene-terminated polyisoimide oligomer, and the silver powder contains about 30% by volume and the binder resin about 70% by volume.

[0085] 一方同様に、実施例の電極層に使用したバインダー樹脂もアセチレン末端ポリイソ イミドオリゴマーであり、前記複合粉は、電極層中に 30体積%程度、ノくインダー樹脂 は 70体積%程度入っている。  On the other hand, similarly, the binder resin used in the electrode layer of the example is also an acetylene-terminated polyisoimide oligomer, and the composite powder contains about 30% by volume in the electrode layer and about 70% by volume of the non-under resin. ing.

[0086] 前記複合粉は、主成分としての Agが 79at% (原子%)程度、酸化ビスマス(Bi O )  The composite powder contains about 79 at% (atomic%) of Ag as a main component, bismuth oxide (Bi 2 O 3)

2 3 力 Sl6at%程度、カーボンが 5at%程度含有されている。なお、本実施例では前記複 合粉として、昭栄化学工業 (株)社製の貴金属粉末 AG— 522を使用した。  2 3 Force Sl 6at%, carbon 5at% is contained. In the present example, precious metal powder AG-522 manufactured by Shoei Chemical Industry Co., Ltd. was used as the composite powder.

[0087] 実施例及び比較例に対し、まず転写板上に抵抗体層をスクリーン印刷にて形成し 、 260°C30分間の乾燥を行なって溶媒を蒸発させた。次に、前記抵抗体層の上に、 ペースト状の電極層を同様なスクリーン印刷にて形成し、実施例及び比較例ともに 2 60°Cで 30分間の乾燥を行って溶媒を蒸発させた後、 390°Cで 90分間の焼成を行 いバインダー樹脂を熱硬化させた。そして実施例及び比較例における前記抵抗体層 のみの部分の膜厚と前記電極層と抵抗体層とが重なった部分の膜厚を表面粗さ計 にてそれぞれ測定した。その実験結果を図 8と図 9に示す。横軸は、前記抵抗体層 および電極層の幅方向の寸法であり、縦軸が膜厚である。図 8は比較例の実験結果 、図 9は実施例の実験結果である。 [0088] 図 8に示す比較例の実験結果では、抵抗体層のみの部分の膜厚より、電極層と抵 抗体層とを積層した部分の膜厚のほうが薄くなつている箇所が存在し、これにより、比 較例では、電極層が抵抗体層に侵食していることがわかる。 For the examples and comparative examples, first, a resistor layer was formed by screen printing on a transfer plate, and drying was performed at 260 ° C. for 30 minutes to evaporate the solvent. Next, a paste-like electrode layer is formed by the same screen printing on the resistor layer, and after drying for 30 minutes at 260 ° C. for both the example and the comparative example, the solvent is evaporated. Baking was performed at 390 ° C. for 90 minutes to thermally cure the binder resin. Then, the film thickness of only the portion of the resistor layer and the film thickness of the portion where the electrode layer and the resistor layer overlap in the example and the comparative example were measured with a surface roughness meter. The experimental results are shown in Fig. 8 and Fig. 9. The horizontal axis is the dimension in the width direction of the resistor layer and the electrode layer, and the vertical axis is the film thickness. FIG. 8 shows the experimental results of the comparative example, and FIG. 9 shows the experimental results of the example. According to the experimental results of the comparative example shown in FIG. 8, there is a place where the film thickness of the portion where the electrode layer and the antibody layer are laminated is thinner than the film thickness of the portion of the resistor layer alone, From this, it can be seen that in the comparative example, the electrode layer erodes the resistor layer.

[0089] 一方、図 9に示す実施例では、前記電極層の前記抵抗体層への侵食が見られなか つた。なお実施例に対し、塗膜の付着性を確認するクロスカット法 CFIS k5600- 5 一 6に準拠)に従い粘着テープピール試験を行ったところ、前記抵抗体層と電極層間 の密着性は良好であることがわかった。この試験は、塗膜の表面に lmm間隔で縦及 び横に切り込み(クロスカット)を入れ、その部分にセロハンテープを貼り、そのテープ を急激に引き離して、塗膜の密着性を確認するものである。  On the other hand, in the example shown in FIG. 9, no erosion of the electrode layer on the resistor layer was observed. The adhesion between the resistor layer and the electrode layer is good when the adhesive tape peel test is carried out according to the cross-cut method CFIS k 5600-56 (in accordance with the cross-cut method for confirming adhesion of the coating film). I understood it. In this test, a cut (cross cut) is made longitudinally and horizontally at 1 mm intervals on the surface of the coating film, a cellophane tape is attached to the portion, the tape is rapidly pulled apart, and the adhesion of the coating film is confirmed. It is.

[0090] 次に図 10は、上記した比較例の抵抗体層と電極層との境目付近(図 7に示す矢印 付近)を真上から見た SEM (走査型電子顕微鏡)写真である。  Next, FIG. 10 is a SEM (scanning electron microscope) photograph of the vicinity of the boundary between the resistor layer and the electrode layer of the above-described comparative example (near the arrow shown in FIG. 7) as viewed from directly above.

[0091] 図 10の左側に現れている薄黒い箇所は、抵抗体層の表面であり、右側に現れてい る白い箇所は、電極層の表面である。  The light dark spots appearing on the left of FIG. 10 are the surface of the resistor layer, and the white spots appearing on the right are the surface of the electrode layer.

[0092] 図 10に示すように、陥没している箇所が多々見られ、特に境目付近では、前記抵 抗体層の表面のほうが、電極層の表面よりも手前側に(高い位置に)存在するように 見えることがわかる。また右側にある電極層の表面からは所々、抵抗体層の表面が 現れており、前記電極層が完全に前記抵抗体層の表面を覆っていないことがわかる  As shown in FIG. 10, a large number of depressed portions are observed. In particular, near the boundary, the surface of the antibody layer is located on the front side (higher position) than the surface of the electrode layer. It can be seen that Also, it can be seen that the surface of the resistor layer appears in some places from the surface of the electrode layer on the right side, and the electrode layer does not completely cover the surface of the resistor layer.

[0093] 次に、銀粉 (比較例)と、 Agが 79at%程度、酸化ビスマス(Bi O )が 16at%程度、 Next, silver powder (comparative example), about 79 at% of Ag, and about 16 at% of bismuth oxide (Bi 2 O 3),

2 3  twenty three

カーボンが 5at%程度含む複合粉 (実施例)とを、それぞれ 390°Cで 2時間焼成し、 焼成後の状態の SEM写真が図 11及び図 12である。図 11は比較例の SEM写真、 図 12は実施例の SEM写真である。図 11と図 12は同じ倍率で撮った SEM写真であ る。  The composite powder (Example) containing about 5 at% of carbon is fired at 390 ° C. for 2 hours, respectively, and the SEM photograph of the state after firing is shown in FIGS. FIG. 11 is a SEM photograph of a comparative example, and FIG. 12 is a SEM photograph of an example. Figures 11 and 12 are SEM photographs taken at the same magnification.

[0094] 図 11に示す比較例では、溶融した銀粉どうしが寄り集まった塊状のものが多数見ら れ、また多数の空孔も形成されていることがわかった。一方、図 12に示す実施例では 、複合粉はほとんど溶融しておらず、細かい粒子状を維持していることがわかった。  In the comparative example shown in FIG. 11, it was found that a large number of lumps in which the melted silver powder was gathered were seen, and a large number of pores were also formed. On the other hand, in the example shown in FIG. 12, it was found that the composite powder was hardly melted and maintained in the form of fine particles.

[0095] 次に、図 8、図 9の実験に使用した図 7に示す基板(転写板)を図 5に示す金型 40で 覆い、前記金型 40のキヤビティ 41に溶融状態のエポキシ樹脂を注入して、成形基板 2を形成し、前記基板 (転写板)を除去して転写型抵抗基板を製造した。転写型抵抗 基板の形状は図 1ないし図 3で示すものと同様である。 Next, the substrate (transfer plate) shown in FIG. 7 used in the experiments of FIG. 8 and FIG. 9 is covered with the mold 40 shown in FIG. 5, and the cavity 41 of the mold 40 is melted with epoxy resin. Injection and molding substrate 2 was formed, and the substrate (transfer plate) was removed to manufacture a transfer type resistance substrate. The shape of the transfer type resistance substrate is the same as that shown in FIGS. 1 to 3.

[0096] 実施例、及び比較例の各転写型抵抗基板を用い、高圧下で、加熱と加湿を行うプ レッシャータッカーテスト(PCT)において電極層に積層された抵抗体層の表面硬度 を測定した。条件は、気圧 0. 2MPaで、温度 121°C、湿度 100%で、 270時間まで 行った。 The surface hardness of the resistor layer laminated on the electrode layer was measured in a pressure tucker test (PCT) in which heating and humidification were performed under high pressure using each transfer type resistance substrate of the example and the comparative example. . The conditions were atmospheric pressure of 0.2 MPa, temperature of 121 ° C., and humidity of 100%, for up to 270 hours.

[0097] 実験では、測定荷重を 80gf、 120gfとして表面のダイナミック硬度を測定した。ここ で、ダイナミック硬度とは、ダイヤモンドの圧子を試料表面に接触させ、極微小な力を 加えて圧子を押し込んだとき、押し込み荷重と圧子の押し込み深さとを計測して、両 者の関係力 硬度を算出して得るものである。測定に使用した装置は、島津製作所 社製の DUH— 201である。  In the experiment, the dynamic hardness of the surface was measured under the measurement load of 80 gf and 120 gf. Here, with the dynamic hardness, when a diamond indenter is brought into contact with the sample surface and a very small force is applied to depress the indenter, the indentation load and the indentation depth of the indenter are measured, and the relationship force between the two is obtained. Is obtained by calculating The apparatus used for the measurement is DUH-201 manufactured by Shimadzu Corporation.

[0098] 図 13は実施例の経過時間とダイナミック硬度との関係を示すグラフである。一方、 図 14は比較例の経過時間とダイナミック硬度との関係を示すグラフである。  FIG. 13 is a graph showing the relationship between elapsed time and dynamic hardness in Examples. On the other hand, FIG. 14 is a graph showing the relationship between the elapsed time and the dynamic hardness of the comparative example.

[0099] 図 13の実施例では、ダイナミック硬度は 270時間までさほど変化しなかった。一方 、図 14の比較例では、 100時間で前記ダイナミック硬度が低くなり、特に実施例に比 ベて小さレ、硬度しか得られな力つた。  [0099] In the example of FIG. 13, the dynamic hardness did not change much up to 270 hours. On the other hand, in the comparative example of FIG. 14, the dynamic hardness became low in 100 hours, and in particular, it was possible to obtain only small hardness and hardness as compared with the example.

[0100] 次に、実施例、及び比較例の各転写型抵抗基板を用い、低温状態と高温状態とを 交互に繰り返すヒートショック試験において電極層に積層された抵抗体層の表面硬 度を測定した。条件は、 40°Cから 148°Cへの昇温、及び 148°C〜一 40°Cへの降 温を一サイクルとし、このサイクルを 164回行った。  Next, the surface hardness of the resistor layer laminated on the electrode layer is measured in the heat shock test in which the low temperature state and the high temperature state are alternately repeated using each transfer type resistance substrate of the example and the comparative example. did. The conditions were one cycle of heating from 40 ° C. to 148 ° C. and cooling from 148 ° C. to 140 ° C., and this cycle was performed 164 times.

[0101] 実験では、測定荷重を 80gf、 120gfとして表面硬度 (ダイナミック硬度)を測定した In the experiment, the surface hardness (dynamic hardness) was measured under the measurement load of 80 gf and 120 gf.

[0102] 図 15は実施例のサイクル数とダイナミック硬度との関係を示すグラフである。一方、 図 16は比較例のサイクル数とダイナミック硬度との関係を示すグラフである。 FIG. 15 is a graph showing the relationship between the number of cycles and the dynamic hardness in the example. On the other hand, FIG. 16 is a graph showing the relationship between the number of cycles and the dynamic hardness in the comparative example.

[0103] 図 15及び図 16に示すように、実施例のほうが比較例に比べて高レ、ダイナミック硬 度を得られることがわかった。  As shown in FIG. 15 and FIG. 16, it was found that the embodiment was able to obtain higher hardness and dynamic hardness than the comparative example.

[0104] 図 13〜図 16の実験結果において、実施例のほうが比較例に比べて高い硬度を得 られるのは、電極層の抵抗体層内への侵入が、比較例に比して抑制されているため であると考えられる。 In the experimental results shown in FIGS. 13 to 16, in the embodiment, higher hardness can be obtained compared to the comparative example, because the penetration of the electrode layer into the resistor layer is suppressed as compared to the comparative example. Because It is considered to be.

[0105] 次に、前記転写型抵抗基板を用いて、水没式マイグレーション試験を行った。  Next, a submersion migration test was performed using the transfer resistance substrate.

試験条件は、実施例及び比較例の転写型抵抗基板を夫々、純水(導電率 0. 06 X 10— 4S/m)に浸し、端子間(図 2における端子 6aと端子 6cとの間)に 5Vの印加電 圧をかけ、このときの絶縁抵抗を測定した。その結果を、図 17に示す。 Test conditions, respectively the transfer type resistor substrates of Examples and Comparative Examples people, pure water soaked in (conductivity 0. 06 X 10- 4 S / m ), between the terminal 6a and the terminal 6c between the terminal (Figure 2 An applied voltage of 5 V was applied to), and the insulation resistance at this time was measured. The results are shown in FIG.

[0106] 図 17に示すように、実施例及び比較例ともに、時間経過とともに絶縁抵抗は低くな る力 比較例は約 4時間で大きく絶縁抵抗が低下するのに対し、実施例は約 12時間 、高い絶縁抵抗を保っており、実施例のほうが比較例に比べて耐マイグレーション性 に優れることがわ力、つた。これは、実施例のほうが比較例に比べて電極層の抵抗体 層内への侵入が抑制され、抵抗体層の膜厚が厚い膜厚として保たれているためであ ると考えられる。  As shown in FIG. 17, in each of the example and the comparative example, the insulation resistance decreases with time, and in the comparative example, the insulation resistance significantly decreases in about 4 hours, whereas in the example, the insulation resistance decreases about 12 hours. It was found that high insulation resistance was maintained, and that the example was superior to the comparative example in migration resistance. This is considered to be because the penetration of the electrode layer into the resistor layer is suppressed in the example compared to the comparative example, and the film thickness of the resistor layer is maintained as a large film thickness.

[0107] 図 18は、実施例及び比較例の電極ペーストに対する TG— DTA (熱重量一示差 熱分析)の実験結果である。 TG— DTA測定器には、 SIIナノテクノロジ一社製の TG /DTA6200を使用した。  [0107] FIG. 18 shows the experimental results of TG-DTA (thermogravimetric differential thermal analysis) for the electrode pastes of Examples and Comparative Examples. As TG-DTA measuring instrument, TG / DTA6200 manufactured by SII Nano Technology Co., Ltd. was used.

[0108] また実験で使用した実施例及び比較例の電極ペーストは、図 8,図 9の実験で使用 したものと同じである。  The electrode pastes of the examples and comparative examples used in the experiment are the same as those used in the experiments of FIGS.

[0109] 図 18に示すように、比較例の銀粉による電極ペーストは、 DTA曲線、及び TG曲線 力 約 380°C前後に溶融ピークを持つとともに重量減少が見られた。  As shown in FIG. 18, the electrode paste of the silver powder of the comparative example had a DTA curve and a TG curve, and had a melting peak around about 380 ° C. and a weight loss was observed.

[0110] また図 18に示すように、実施例の複合粉による電極ペーストは、 DTA曲線、及び T G曲線力 約 440°C前後に溶融ピークを持つとともに重量減少が見られた。  Further, as shown in FIG. 18, the electrode paste of the composite powder of the example had a melting peak at around DTA curve and T G curve force of about 440 ° C. and a weight loss was observed.

[0111] 実験で示された溶融ピークは、実施例では複合粉の溶融ピーク、比較例では銀粉 の溶融ピークに相当する。  The melting peak shown in the experiment corresponds to the melting peak of the composite powder in the example and the melting peak of the silver powder in the comparative example.

[0112] よって実施例の複合粉は、 400°C前後の熱処理によっても溶融しに《あるいは不 溶であることがわかった。またバインダー樹脂の熱硬化温度は高くても 400°C程度( アセチレン末端ポリイソイミドオリゴマーを使用したとき)であるので、硬化温度にて熱 処理を施しても、前記複合粉の溶融を適切に抑制できることがわかった。  Therefore, it was found that the composite powder of the example was “or less soluble” even by heat treatment at around 400 ° C. Also, since the thermosetting temperature of the binder resin is at most about 400 ° C. (when an acetylene-terminated polyisoimide oligomer is used), the composite powder is appropriately melted even if heat treatment is performed at the curing temperature. It turned out that it can control.

図面の簡単な説明  Brief description of the drawings

[0113] [図 1]本実施形態の抵抗基板を示す斜視図、 [図 2]前記抵抗基板の平面図、 [FIG. 1] A perspective view showing a resistance substrate of the present embodiment, [FIG. 2] A plan view of the resistance substrate,

[図 3]図 2の III— III線での断面図、 [Fig. 3] A sectional view taken along line III-III in Fig. 2,

園 4]抵抗基板の製造方法を示すものであり、転写板に抵抗体層と電極層とが積層さ れた状態の断面図、 4) shows a method of manufacturing a resistance substrate, and is a cross-sectional view of a state in which a resistance layer and an electrode layer are laminated on a transfer plate,

園 5]図 4の次に行われる工程図であり、基板を形成する工程を示す断面図、 園 6]図 5の次に行われる工程図であり、転写板を剥離する工程を示す断面図、 [図 7]実験に使用した抵抗体層および電極層の積層状態を示す断面図、 Garden 5] is a process diagram performed next to FIG. 4 and is a sectional view showing a process of forming a substrate, Garden 6] is a process diagram performed next to FIG. 5 and is a sectional view showing a process of peeling a transfer plate [Fig. 7] A sectional view showing the laminated state of the resistor layer and the electrode layer used in the experiment,

園 8]抵抗体層の上に銀粉を含む電極層が形成された比較例において、抵抗体層の みの部分の膜厚と、前記抵抗体層と電極層とを積層した部分の膜厚とを示すグラフ、 [図 9]抵抗体層の上に、銀、酸化ビスマス及びカーボンからなる複合粉を含む電極層 が形成された実施例において、抵抗体層のみの部分の膜厚と、前記抵抗体層と電 極層とを積層した部分の膜厚とを示すグラフ、 8) In the comparative example in which the electrode layer containing silver powder is formed on the resistor layer, the film thickness of only the resistor layer, the film thickness of the portion where the resistor layer and the electrode layer are laminated, and [FIG. 9] A graph showing [FIG. 9] In an embodiment in which an electrode layer containing composite powder consisting of silver, bismuth oxide and carbon is formed on a resistor layer, the film thickness of only the resistor layer and the Graph showing the film thickness of the portion where the body layer and the electrode layer are stacked,

[図 10]比較例の抵抗体層と電極層との境目付近(図 7に示す矢印付近)を真上から 見た SEM写真、  [FIG. 10] A SEM photograph of the vicinity of the boundary between the resistor layer and the electrode layer of the comparative example (near the arrow shown in FIG. 7) as viewed from directly above,

園 11]銀粉を 390°Cで 2時間焼成した状態を示す焼成後の SEM写真 (比較例)、 園 12]銀、酸化ビスマス及びカーボンからなる複合粉を 390°Cで 2時間焼成した状態 を示す焼成後の SEM写真 (実施例)、 11) SEM photograph (comparative example) after firing showing a state in which silver powder is fired at 390 ° C. for 2 hours (comparative example), a state in which composite powder consisting of silver, bismuth oxide and carbon is fired at 390 ° C. for 2 hours SEM photograph after firing (example) shown

園 13]図 9の実験に使用した実施例において、図 7に示す状態から転写型基板を製 造し、所定条件でプレッシャータッカーテスト(PCT)を行ったときの、経過時間と、抵 抗体層の表面硬度 (ダイナミック硬度)との関係を示すグラフ、 13) In the example used in the experiment of FIG. 9, the transfer type substrate is manufactured from the state shown in FIG. 7, and the elapsed time when the pressure tacker test (PCT) is performed under predetermined conditions, the resistance antibody layer Graph showing the relationship with the surface hardness (dynamic hardness) of

園 14]図 8の実験に使用した比較例において、図 7に示す状態から転写型基板を製 造し、所定条件でプレッシャータッカーテスト(PCT)を行ったときの、経過時間と、抵 抗体層の表面硬度 (ダイナミック硬度)との関係を示すグラフ、 14) In the comparative example used in the experiment of FIG. 8, the transfer type substrate is manufactured from the state shown in FIG. 7, and the elapsed time when the pressure tacker test (PCT) is performed under predetermined conditions, the resistance antibody layer Graph showing the relationship with the surface hardness (dynamic hardness) of

園 15]図 9の実験に使用した実施例において、図 7に示す状態から転写型基板を製 造し、所定条件でヒートショック試験を行ったときの、サイクル数と、抵抗体層の表面 硬度 (ダイナミック硬度)との関係を示すグラフ、 15) In the example used in the experiment of FIG. 9, the number of cycles and the surface hardness of the resistor layer when the transfer type substrate is manufactured from the state shown in FIG. 7 and heat shock test is performed under predetermined conditions Graph showing the relationship with (dynamic hardness),

園 16]図 8の実験に使用した比較例において、図 7に示す状態から転写型基板を製 造し、所定条件でヒートショック試験を行ったときの、サイクル数と、抵抗体層の表面 硬度(ダイナミック硬度)との関係を示すグラフ、 16) In the comparative example used in the experiment of FIG. 8, the transfer type substrate is manufactured from the state shown in FIG. 7, and the number of cycles and the surface of the resistor layer when heat shock test is performed under predetermined conditions. Graph showing the relationship with hardness (dynamic hardness),

[図 17]実施例及び比較例の転写型基板を用いて水没式マイグレーション試験を行つ たときの、経過時間と絶縁抵抗とを関係を示すグラフ、  [FIG. 17] A graph showing the relationship between elapsed time and insulation resistance when a submersion migration test is performed using the transfer type substrate of the example and the comparative example.

[図 18]実施例及び比較例の電極ペーストに対する TG - DTA曲線、  [FIG. 18] TG-DTA curves for electrode pastes of examples and comparative examples,

符号の説明 Explanation of sign

1 抵抗基板 (電子部品) 1 Resistor board (Electronic parts)

2 成形基板 2 Molded substrate

2b 表面 2b surface

3 コモン電極パターン  3 common electrode pattern

4 抵抗検出パターン  4 Resistance detection pattern

5 電極補助パターン  5 electrode auxiliary pattern

3a, 4a, 5a 弓 |き出しパターン  3a, 4a, 5a bows | Outbreak pattern

5b 接続パターン  5b connection pattern

oa, 6b, 6c ϋナ oa, 6b, 6c

21 抵抗体層  21 Resistor layer

21 a 表面  21 a surface

22 電極層  22 electrode layer

30 転写板  30 transfer plate

Claims

請求の範囲 The scope of the claims [1] 積層された電極層及び抵抗体層と、前記電極層及び前記抵抗体層を支持する基 板と、を有して構成され、  [1] It comprises: a stacked electrode layer and a resistor layer; and a substrate for supporting the electrode layer and the resistor layer, 前記電極層は、熱硬化性のバインダー樹脂と、前記バインダー樹脂内に分散した 導電性粒子とを有し、  The electrode layer has a thermosetting binder resin and conductive particles dispersed in the binder resin, 前記導電性粒子は、主成分の銀と、酸化ビスマス、あるいはカーボン、又は、酸化 ビスマス及びカーボンを有してなる複合粉を含むことを特徴とする電子部品。  The electronic component is characterized in that the conductive particles include composite powder comprising silver as a main component, bismuth oxide or carbon, or bismuth oxide and carbon. [2] 前記電極層および前記抵抗体層は、前記基板内に埋設され、前記抵抗体層の表 面が前記基板の表面と同一面にて現れている請求項 1記載の電子部品。  [2] The electronic component according to claim 1, wherein the electrode layer and the resistor layer are embedded in the substrate, and the surface of the resistor layer appears in the same plane as the surface of the substrate. [3] 前記バインダー樹脂は、アセチレン末端ポリイソイミドオリゴマーを有して構成される 請求項 1又は 2に記載の電子部品。 [3] The electronic component according to claim 1 or 2, wherein the binder resin comprises an acetylene-terminated polyisoimide oligomer. [4] 前記抵抗体層は熱硬化性のバインダー樹脂とカーボン粉とを有し、前記抵抗体層 のバインダー樹脂は、前記電極層に含まれるバインダー樹脂と同種である請求項 1 なレ、し 3のレ、ずれかに記載の電子部品。 [4] The resistor layer has a thermosetting binder resin and carbon powder, and the binder resin of the resistor layer is the same type as the binder resin contained in the electrode layer. The electronic component described in 3 or any one of them. [5] 以下の工程を有することを特徴とする電子部品の製造方法。 [5] A method of manufacturing an electronic component comprising the following steps. (a) 転写板上に抵抗体層を形成する工程、  (a) forming a resistor layer on the transfer plate, (b) 溶媒内に、少なくとも熱硬化性のバインダー樹脂と、主成分の銀と、酸化ビス マス、あるいは、カーボン、又は酸化ビスマス及びカーボンとを有する複合粉とを混合 して成るペースト状の電極層を前記抵抗体層上に形成する工程、  (b) A paste-like electrode obtained by mixing, in a solvent, at least a thermosetting binder resin, silver as a main component, bismuth oxide, carbon, or composite powder having bismuth oxide and carbon. Forming a layer on the resistor layer, (c) 前記電極層を熱処理して、前記溶媒を除去するとともに前記バインダー樹脂 を熱硬化させる工程、  (c) heat treating the electrode layer to remove the solvent and thermally curing the binder resin; (d) 前記電極層及び抵抗体層を支持する基板を形成した後、前記転写板を剥離 する工程。  (d) A step of peeling off the transfer plate after forming a substrate for supporting the electrode layer and the resistor layer. [6] 前記(a)工程で、溶媒内に、少なくとも熱硬化性のバインダー樹脂と、カーボン粉と を混合して成るペースト状の抵抗体層を前記転写板上に形成し、前記ペースト状の 抵抗体層を乾燥させ、  [6] In the step (a), a paste-like resistive layer formed by mixing at least a thermosetting binder resin and carbon powder in a solvent is formed on the transfer plate, and the paste-like Dry the resistor layer, 前記(c)工程での熱処理により、前記抵抗体層のバインダー樹脂を、前記電極層 のノくインダー樹脂とともに熱硬化させる請求項 5記載の電子部品の製造方法。 前記電極層に混合されるバインダー樹脂と同種の樹脂を前記抵抗体層のバインダ 一樹脂として使用する請求項 6記載の電子部品の製造方法。 The method of manufacturing an electronic component according to claim 5, wherein the binder resin of the resistor layer is thermally cured together with the nodder resin of the electrode layer by the heat treatment in the step (c). The manufacturing method of the electronic component of Claim 6 using resin of the same kind as the binder resin mixed with the said electrode layer as a binder resin of the said resistor layer.
PCT/JP2007/059637 2006-05-15 2007-05-10 Electronic component and method for manufacturing the same Ceased WO2007132721A1 (en)

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JP2018091417A (en) * 2016-12-05 2018-06-14 ニチアス株式会社 Raw material for gasket
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JP2016162959A (en) * 2015-03-04 2016-09-05 アルプス電気株式会社 Resistor and variable resistor using the resistor
JP2018091417A (en) * 2016-12-05 2018-06-14 ニチアス株式会社 Raw material for gasket
WO2023058126A1 (en) * 2021-10-05 2023-04-13 三菱電機株式会社 Method for manufacturing substrate and method for manufacturing semiconductor device
JPWO2023058126A1 (en) * 2021-10-05 2023-04-13
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