[go: up one dir, main page]

WO2007103870A3 - Regulateur thermique a derivation utilise dans le traitement sous vide des semiconducteurs - Google Patents

Regulateur thermique a derivation utilise dans le traitement sous vide des semiconducteurs Download PDF

Info

Publication number
WO2007103870A3
WO2007103870A3 PCT/US2007/063311 US2007063311W WO2007103870A3 WO 2007103870 A3 WO2007103870 A3 WO 2007103870A3 US 2007063311 W US2007063311 W US 2007063311W WO 2007103870 A3 WO2007103870 A3 WO 2007103870A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor processing
bypass thermal
adjuster
thermal adjuster
vacuum semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/063311
Other languages
English (en)
Other versions
WO2007103870A2 (fr
Inventor
Peter Van Der Meulen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Blueshift Technologies Inc
Original Assignee
Blueshift Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Blueshift Technologies Inc filed Critical Blueshift Technologies Inc
Publication of WO2007103870A2 publication Critical patent/WO2007103870A2/fr
Anticipated expiration legal-status Critical
Publication of WO2007103870A3 publication Critical patent/WO2007103870A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J13/00—Controls for manipulators
    • B25J13/08—Controls for manipulators by means of sensing devices, e.g. viewing or touching devices
    • B25J13/088—Controls for manipulators by means of sensing devices, e.g. viewing or touching devices with position, velocity or acceleration sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Human Computer Interaction (AREA)
  • Mechanical Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

L'invention concerne un régulateur thermique à dérivation pouvant être placé entre deux robots. Ce régulateur forme une chambre d'isolation et de régulation thermique pour certaines plaquettes tout en permettant à d'autres plaquettes envoyées par les robots de le traverser.
PCT/US2007/063311 2006-03-05 2007-03-05 Regulateur thermique a derivation utilise dans le traitement sous vide des semiconducteurs Ceased WO2007103870A2 (fr)

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
US77968406P 2006-03-05 2006-03-05
US77970706P 2006-03-05 2006-03-05
US77947806P 2006-03-05 2006-03-05
US77946306P 2006-03-05 2006-03-05
US77960906P 2006-03-05 2006-03-05
US60/779,684 2006-03-05
US60/779,463 2006-03-05
US60/779,609 2006-03-05
US60/779,707 2006-03-05
US60/779,478 2006-03-05
US78483206P 2006-03-21 2006-03-21
US60/784,832 2006-03-21
US74616306P 2006-05-01 2006-05-01
US60/746,163 2006-05-01
US80718906P 2006-07-12 2006-07-12
US60/807,189 2006-07-12
US82345406P 2006-08-24 2006-08-24
US60/823,454 2006-08-24

Publications (2)

Publication Number Publication Date
WO2007103870A2 WO2007103870A2 (fr) 2007-09-13
WO2007103870A3 true WO2007103870A3 (fr) 2008-11-27

Family

ID=39494162

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2007/063311 Ceased WO2007103870A2 (fr) 2006-03-05 2007-03-05 Regulateur thermique a derivation utilise dans le traitement sous vide des semiconducteurs
PCT/US2007/063333 Ceased WO2007103887A2 (fr) 2006-03-05 2007-03-05 Modules de procedes de fabrication de semi-conducteurs
PCT/US2007/063345 Ceased WO2007103896A2 (fr) 2006-03-05 2007-03-05 Procedes pour identifier le centre d'une plaquette.

Family Applications After (2)

Application Number Title Priority Date Filing Date
PCT/US2007/063333 Ceased WO2007103887A2 (fr) 2006-03-05 2007-03-05 Modules de procedes de fabrication de semi-conducteurs
PCT/US2007/063345 Ceased WO2007103896A2 (fr) 2006-03-05 2007-03-05 Procedes pour identifier le centre d'une plaquette.

Country Status (4)

Country Link
JP (2) JP5959138B2 (fr)
KR (2) KR101570626B1 (fr)
SG (1) SG172675A1 (fr)
WO (3) WO2007103870A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10086511B2 (en) 2003-11-10 2018-10-02 Brooks Automation, Inc. Semiconductor manufacturing systems
US20070269297A1 (en) 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
US7458763B2 (en) 2003-11-10 2008-12-02 Blueshift Technologies, Inc. Mid-entry load lock for semiconductor handling system
US8064070B2 (en) 2008-01-25 2011-11-22 Applied Materials, Inc. Methods and apparatus for an integral local substrate center finder for I/O and chamber slit valves
JP2013503414A (ja) * 2009-08-26 2013-01-31 ビーコ・インスツルメンツ・インコーポレーテッド 磁気記録媒体上にパターンを製造するためのシステム
US8406918B2 (en) * 2009-12-21 2013-03-26 WD Media, LLC Master teaching jig
US11587813B2 (en) 2013-12-17 2023-02-21 Brooks Automation Us, Llc Substrate transport apparatus
US10134621B2 (en) * 2013-12-17 2018-11-20 Brooks Automation, Inc. Substrate transport apparatus
JP7409800B2 (ja) 2019-08-09 2024-01-09 川崎重工業株式会社 ロボット制御装置、ロボット、及びロボット制御方法
CN110767587B (zh) * 2019-10-21 2022-04-01 西安奕斯伟材料科技有限公司 一种晶圆处理装置和上下料方法
KR102289382B1 (ko) * 2019-12-31 2021-08-12 한국기술교육대학교 산학협력단 반도체 공장용 위치보정방법
US11813757B2 (en) * 2020-10-13 2023-11-14 Applied Materials, Inc. Centerfinding for a process kit or process kit carrier at a manufacturing system
KR102850689B1 (ko) 2020-12-02 2025-08-26 에스케이실트론 주식회사 블록 위치 조정장치 및 방법
CN113658901B (zh) 2021-10-21 2022-01-21 西安奕斯伟材料科技有限公司 晶圆v型缺口中心的定位方法、系统及计算机存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5183547A (en) * 1989-09-13 1993-02-02 Sony Corporation Sputtering apparatus and system for sputtering employing same
US6530732B1 (en) * 1997-08-12 2003-03-11 Brooks Automation, Inc. Single substrate load lock with offset cool module and buffer chamber

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740617A (en) * 1968-11-20 1973-06-19 Matsushita Electronics Corp Semiconductor structure and method of manufacturing same
JPS6245041A (ja) * 1985-08-23 1987-02-27 Canon Inc 円形板状物体の位置決め装置
JPS62162342A (ja) * 1986-01-13 1987-07-18 Canon Inc ウエハの位置合せ装置
JPS62204109A (ja) * 1986-03-04 1987-09-08 Yokogawa Electric Corp ロボツトア−ム姿勢測定装置
US4819167A (en) * 1987-04-20 1989-04-04 Applied Materials, Inc. System and method for detecting the center of an integrated circuit wafer
JP3063999B2 (ja) * 1990-09-28 2000-07-12 株式会社アマダ 柔軟構造物のフレキシビリティ制御装置
US5452078A (en) * 1993-06-17 1995-09-19 Ann F. Koo Method and apparatus for finding wafer index marks and centers
US6126380A (en) * 1997-08-04 2000-10-03 Creative Design Corporation Robot having a centering and flat finding means
US6405101B1 (en) * 1998-11-17 2002-06-11 Novellus Systems, Inc. Wafer centering system and method
JP4402811B2 (ja) * 2000-05-26 2010-01-20 東京エレクトロン株式会社 被処理体の搬送システムおよび被処理体の位置ずれ量の検出方法
US6553280B2 (en) * 2000-07-07 2003-04-22 Applied Materials, Inc. Valve/sensor assemblies
KR100803414B1 (ko) * 2000-08-16 2008-02-13 레이던 컴퍼니 근거리 물체 감지 시스템
JP2002270672A (ja) * 2001-03-09 2002-09-20 Olympus Optical Co Ltd アライメント方法及び基板検査装置
US6962644B2 (en) * 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US6760976B1 (en) * 2003-01-15 2004-07-13 Novellus Systems, Inc. Method for active wafer centering using a single sensor
KR20060028643A (ko) * 2003-06-24 2006-03-30 코닌클리케 필립스 일렉트로닉스 엔.브이. 카메라가 제공된 디바이스를 제어 시스템을 통해 원하는위치로 이동시키는 방법, 및 이러한 시스템
JP2005093807A (ja) * 2003-09-18 2005-04-07 Hitachi Kokusai Electric Inc 半導体製造装置
US7458763B2 (en) * 2003-11-10 2008-12-02 Blueshift Technologies, Inc. Mid-entry load lock for semiconductor handling system
WO2005048313A2 (fr) * 2003-11-10 2005-05-26 Blueshift Technologies, Inc. Procedes et systemes de manipulation de pieces a usiner dans un systeme de manipulation semi-conducteur sous vide
JP4445293B2 (ja) * 2004-03-11 2010-04-07 株式会社リコー 画像形成装置における記録紙形状測定方法及び装置、並びに、画像形成装置における記録紙形状異常診断機能付き画像形成装置
JP2006005242A (ja) * 2004-06-18 2006-01-05 Canon Inc 画像処理装置、画像処理方法、露光装置、およびデバイス製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5183547A (en) * 1989-09-13 1993-02-02 Sony Corporation Sputtering apparatus and system for sputtering employing same
US6530732B1 (en) * 1997-08-12 2003-03-11 Brooks Automation, Inc. Single substrate load lock with offset cool module and buffer chamber

Also Published As

Publication number Publication date
JP2009529248A (ja) 2009-08-13
KR101570626B1 (ko) 2015-11-19
JP2013231726A (ja) 2013-11-14
WO2007103896A3 (fr) 2008-07-10
KR20140042925A (ko) 2014-04-07
KR20080111036A (ko) 2008-12-22
SG172675A1 (en) 2011-07-28
WO2007103870A2 (fr) 2007-09-13
JP5959138B2 (ja) 2016-08-02
WO2007103896A2 (fr) 2007-09-13
WO2007103887A2 (fr) 2007-09-13
JP5689920B2 (ja) 2015-03-25
WO2007103887A3 (fr) 2008-06-12

Similar Documents

Publication Publication Date Title
WO2007103870A3 (fr) Regulateur thermique a derivation utilise dans le traitement sous vide des semiconducteurs
WO2007112454A3 (fr) Appareil et méthode de traitement de substrats grâce à une ou plusieurs chambres de transfert sous vide
TW200715448A (en) Vacuum processing apparatus, semiconductor device manufacturing method and semiconductor device manufacturing system
GB0821002D0 (en) Compound semiconductor epitaxial substrate and method for producing the same
WO2009034869A1 (fr) Système de traitement sous vide et procédé de transfert de substrat
TW201130019A (en) In vacuum optical wafer heater for cryogenic processing
WO2007021692A3 (fr) Procédé et dispositif de contrôle des caractéristiques de déposition d'une pellicule semi-conductrice
EP1939931A3 (fr) Procédé et appareil pour intégrer la métrologie avec un processus de gravure
WO2008034638A3 (fr) Procédé de métallisation de composants semi-conducteurs et utilisation de ce procédé
EP1615261B8 (fr) Bâti de traitement thermique de plaquette à semiconducteur
AU2007249609A8 (en) Low dimensional thermoelectrics fabricated by semiconductor wafer etching
GB0611229D0 (en) Semiconductor device having SiC substrate and method for manufacturing the same
WO2012057517A3 (fr) Dispositif à semi-conducteur composite et procédé de fabrication d'un semi-conducteur composite
TWI371782B (en) Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
AU2002334841A1 (en) High pressure processing chamber for multiple semiconductor substrates
GB2440484A8 (en) Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate
TW200710253A (en) Integrated metrology tools for monitoring and controlling large area substrate processing chambers
WO2008021342A3 (fr) Formes cristallines de la 9-hydroxy-rispéridone (palipéridone)
WO2008014136A3 (fr) Chambre de transfert octogonale
SG143125A1 (en) Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution
TW200802985A (en) Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same
ZA200904333B (en) Process for the preparation of 6,6-Dimethyl-3-azabicyclo-[3.1.0]-hexane compounds utilizing bisulfite intermediate
AU2002252637A1 (en) High pressure processing chamber for semiconductor substrate including flow enhancing features
WO2008135135A3 (fr) Composant à base d'une matière céramique
WO2008117781A1 (fr) Appareil de production de film par dépôt chimique en phase vapeur (cvd)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07757915

Country of ref document: EP

Kind code of ref document: A2