[go: up one dir, main page]

WO2007100538A3 - Procédé de fabrication de contacts segmentés pour détecteurs de rayonnement par photolithographie directe - Google Patents

Procédé de fabrication de contacts segmentés pour détecteurs de rayonnement par photolithographie directe Download PDF

Info

Publication number
WO2007100538A3
WO2007100538A3 PCT/US2007/004319 US2007004319W WO2007100538A3 WO 2007100538 A3 WO2007100538 A3 WO 2007100538A3 US 2007004319 W US2007004319 W US 2007004319W WO 2007100538 A3 WO2007100538 A3 WO 2007100538A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation detectors
direct photolithography
making segmented
segmented contacts
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/004319
Other languages
English (en)
Other versions
WO2007100538A2 (fr
Inventor
Henry Chen
Serguei Roupassov
Salah Awadalla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Redlen Technologies Inc
Original Assignee
Redlen Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA 2541256 external-priority patent/CA2541256A1/fr
Application filed by Redlen Technologies Inc filed Critical Redlen Technologies Inc
Priority to JP2008556380A priority Critical patent/JP2009527922A/ja
Priority to EP07751102.0A priority patent/EP1996961A4/fr
Publication of WO2007100538A2 publication Critical patent/WO2007100538A2/fr
Publication of WO2007100538A3 publication Critical patent/WO2007100538A3/fr
Priority to IL193577A priority patent/IL193577A0/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/022—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

Cette invention concerne un procédé de fabrication de contacts sur des substrats semi-conducteurs par lithographie directe qui permet d'obtenir une adhérence durable des électrodes, une plus grande résistance interpixel, ainsi que les électrodes servant de contact de blocage, ce qui améliore la résolution énergétique dans le détecteur de rayonnement ainsi produit.
PCT/US2007/004319 2006-02-22 2007-02-21 Procédé de fabrication de contacts segmentés pour détecteurs de rayonnement par photolithographie directe Ceased WO2007100538A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008556380A JP2009527922A (ja) 2006-02-22 2007-02-21 ダイレクトフォトリソグラフィーを用いた、放射線検出器のためのセグメント化接触子の製造方法
EP07751102.0A EP1996961A4 (fr) 2006-02-22 2007-02-21 Procédé de fabrication de contacts segmentés pour détecteurs de rayonnement par photolithographie directe
IL193577A IL193577A0 (en) 2006-02-22 2008-08-20 Method of making segmented contacts for radiation detectors using direct photolitography

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CA2,541,256 2006-02-22
CA 2541256 CA2541256A1 (fr) 2006-02-22 2006-02-22 Electrode de protection pour detecteur monolithique de rayonnement
US11/527,707 US7223982B1 (en) 2006-02-22 2006-09-27 Segmented radiation detector with side shielding cathode
US11/527,707 2006-09-27
US11/633,091 2006-12-04
US11/633,091 US7728304B2 (en) 2006-02-22 2006-12-04 Method of making segmented contacts for radiation detectors using direct photolithography

Publications (2)

Publication Number Publication Date
WO2007100538A2 WO2007100538A2 (fr) 2007-09-07
WO2007100538A3 true WO2007100538A3 (fr) 2008-04-24

Family

ID=38459512

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/004319 Ceased WO2007100538A2 (fr) 2006-02-22 2007-02-21 Procédé de fabrication de contacts segmentés pour détecteurs de rayonnement par photolithographie directe

Country Status (1)

Country Link
WO (1) WO2007100538A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103097913A (zh) * 2010-09-13 2013-05-08 皇家飞利浦电子股份有限公司 具有操纵电极的辐射探测器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8614423B2 (en) * 2009-02-02 2013-12-24 Redlen Technologies, Inc. Solid-state radiation detector with improved sensitivity
JP5297907B2 (ja) * 2009-06-18 2013-09-25 浜松ホトニクス株式会社 光検出装置
US20130049151A1 (en) * 2011-08-31 2013-02-28 General Electric Company Anode-illuminated radiation detector
WO2016002455A1 (fr) 2014-07-03 2016-01-07 Jx日鉱日石金属株式会社 Corps de structure d'électrode ubm de détecteur de rayonnement, détecteur de rayonnement, et procédé de fabrication associé
CN108027448B (zh) * 2015-10-09 2022-02-11 深圳帧观德芯科技有限公司 半导体x射线检测器的封装方法
CN116666405B (zh) * 2023-07-31 2023-09-26 山西创芯光电科技有限公司 用于测试表面漏电流的器件结构及其制备方法和测试方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144090A (en) * 1977-10-25 1979-03-13 Ppg Industries, Inc. Non-oxidative removal of gold films
US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US5905624A (en) * 1998-05-29 1999-05-18 Northwest Magnet, Inc. Electromagnet control system having printed circuit board variable voltage selection array
US6212093B1 (en) * 2000-01-14 2001-04-03 North Carolina State University High-density non-volatile memory devices incorporating sandwich coordination compounds
US20020158207A1 (en) * 1996-11-26 2002-10-31 Simage, Oy. Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US20040052456A1 (en) * 2000-05-26 2004-03-18 Pierpaolo Boffi Cdznte eletro-optical switch
US20050167606A1 (en) * 2003-08-20 2005-08-04 Harrison Fiona A. Cadmium-zinc-telluride detectors

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144090A (en) * 1977-10-25 1979-03-13 Ppg Industries, Inc. Non-oxidative removal of gold films
US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US20020158207A1 (en) * 1996-11-26 2002-10-31 Simage, Oy. Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US5905624A (en) * 1998-05-29 1999-05-18 Northwest Magnet, Inc. Electromagnet control system having printed circuit board variable voltage selection array
US6212093B1 (en) * 2000-01-14 2001-04-03 North Carolina State University High-density non-volatile memory devices incorporating sandwich coordination compounds
US20040052456A1 (en) * 2000-05-26 2004-03-18 Pierpaolo Boffi Cdznte eletro-optical switch
US20050167606A1 (en) * 2003-08-20 2005-08-04 Harrison Fiona A. Cadmium-zinc-telluride detectors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103097913A (zh) * 2010-09-13 2013-05-08 皇家飞利浦电子股份有限公司 具有操纵电极的辐射探测器

Also Published As

Publication number Publication date
WO2007100538A2 (fr) 2007-09-07

Similar Documents

Publication Publication Date Title
WO2007100538A3 (fr) Procédé de fabrication de contacts segmentés pour détecteurs de rayonnement par photolithographie directe
WO2008057629A3 (fr) Dispositifs photovoltaïques et de photodétection à base de réseaux de nanostructures alignées
WO2009002040A3 (fr) Dispositif luminescent à semi-conducteurs et procédé de fabrication associé
WO2011025631A3 (fr) Cristal semi-conducteur basé sur un détecteur de radiations et procédé de production dudit cristal
WO2009102617A3 (fr) Dispositif comportant une couche noire de génération d'énergie et son procédé de fabrication
TW200703640A (en) Phase change memory with adjustable resistance ratio and fabricating method thereof
WO2008143721A3 (fr) Cellule photovoltaïque avec un refroidissement de support chaud réduit
WO2008156294A3 (fr) Dispositif photoémetteur à semi-conducteur et procédé de fabrication correspondant
WO2011122853A3 (fr) Dispositif photovoltaïque solaire et son procédé de production
WO2008110329A3 (fr) Photoconducteur rapide
SG148972A1 (en) Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
WO2009033134A3 (fr) Ensemble à motifs pour fabriquer une pile solaire et son procédé
WO2010045152A3 (fr) Film fluoropolymère à couches multiples
JP2008523561A5 (fr)
WO2009050995A1 (fr) Elément de conversion photoélectrique de sensibilisation de pigments et son procédé de fabrication
WO2009142787A3 (fr) Dispositifs photovoltaïques utilisant des films polymères nanostructurés moulés à partir de gabarits poreux
WO2008054860A3 (fr) Détecteur de rayonnement et procédé de détection ayant une polarisation réduite
WO2010018961A3 (fr) Pile solaire et son procédé de fabrication
WO2011008195A3 (fr) Dispositif memristif
WO2008086228A3 (fr) Réseaux et procédés de formation de motif de cellule guidée
WO2008108136A1 (fr) Dispositif de commutation et son procédé de fabrication
WO2006130717A3 (fr) Piles solaires organiques a base de materiaux en triplet
WO2007084811A3 (fr) Ensemble integre comprenant un element mobile et un element d’antenne
WO2007076427A3 (fr) Cellules photovoltaïques en tandem
WO2011002212A3 (fr) Appareil de génération d'énergie photovoltaïque, et procédé de fabrication afférent

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 193577

Country of ref document: IL

WWE Wipo information: entry into national phase

Ref document number: 2008556380

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2007751102

Country of ref document: EP