[go: up one dir, main page]

WO2007145701A3 - Nanoscale wire methods and devices - Google Patents

Nanoscale wire methods and devices Download PDF

Info

Publication number
WO2007145701A3
WO2007145701A3 PCT/US2007/008540 US2007008540W WO2007145701A3 WO 2007145701 A3 WO2007145701 A3 WO 2007145701A3 US 2007008540 W US2007008540 W US 2007008540W WO 2007145701 A3 WO2007145701 A3 WO 2007145701A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanoscale wires
devices
substrate
methods
nanoscale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/008540
Other languages
French (fr)
Other versions
WO2007145701A2 (en
Inventor
Sung Woo Nam
Ali Javey
Charles M Lieber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harvard University
Original Assignee
Harvard University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard University filed Critical Harvard University
Publication of WO2007145701A2 publication Critical patent/WO2007145701A2/en
Publication of WO2007145701A3 publication Critical patent/WO2007145701A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Processing (AREA)
  • Thin Film Transistor (AREA)

Abstract

The present invention generally relates to nanoscale wire methods and devices, including systems and methods for positioning nanoscale wires on a surface, and articles made therefrom. One aspect of the invention is generally directed to aligned nanoscale wires on a surface of a substrate, and systems and methods of positioning such nanoscale wires on the surface. In one set of embodiments, a first substrate is provided having a plurality of nanoscale wires, and at least some of the nanoscale wires are transferred to a second substrate by contacting at least some of the nanoscale wires with the second substrate, e.g., by moving or 'sliding' the substrates relative to each other, in some cases causing alignment of the nanoscale wires on the second substrate. Another aspect of the invention is generally directed to electrical devices comprising a number of planes defined by nanoscale wires, e.g., in a 'stacked' configuration. Yet other aspects of the invention are directed to nanoscale wires that can be used as sensors, e.g., in such devices. Still other aspects of the invention are directed to systems and methods for making and using such devices, kits involving the same, and the like.
PCT/US2007/008540 2006-04-07 2007-04-06 Nanoscale wire methods and devices Ceased WO2007145701A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79032206P 2006-04-07 2006-04-07
US60/790,322 2006-04-07

Publications (2)

Publication Number Publication Date
WO2007145701A2 WO2007145701A2 (en) 2007-12-21
WO2007145701A3 true WO2007145701A3 (en) 2008-05-29

Family

ID=38739359

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/008540 Ceased WO2007145701A2 (en) 2006-04-07 2007-04-06 Nanoscale wire methods and devices

Country Status (1)

Country Link
WO (1) WO2007145701A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002017362A2 (en) 2000-08-22 2002-02-28 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
EP1342075B1 (en) 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
JP2008523590A (en) 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ Nanoscale wire-based data storage device
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
EP2095100B1 (en) 2006-11-22 2016-09-21 President and Fellows of Harvard College Method of operating a nanowire field effect transistor sensor
US7520951B1 (en) 2008-04-17 2009-04-21 International Business Machines (Ibm) Corporation Method of transferring nanoparticles to a surface
US7960653B2 (en) 2008-07-25 2011-06-14 Hewlett-Packard Development Company, L.P. Conductive nanowires for electrical interconnect
US8632873B2 (en) 2009-08-17 2014-01-21 Ramot At Tel-Aviv University Ltd. Aligned nanoarray and method for fabricating the same
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
CN102409462B (en) * 2011-08-31 2014-01-22 青岛大学 Method for printing disordered micro nanofibers into ordered fiber array
US9638717B2 (en) 2012-05-03 2017-05-02 President And Fellows Of Harvard College Nanoscale sensors for intracellular and other applications
WO2016069831A1 (en) 2014-10-30 2016-05-06 President And Fellows Of Harvard College Nanoscale wires with tip-localized junctions

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281965A (en) * 2000-03-31 2001-10-10 Ricoh Co Ltd Method of manufacturing contact-type charger, contact-type charger obtained by the method, charging method, and image recording apparatus
EP1170799A2 (en) * 2000-07-04 2002-01-09 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same
US20060019472A1 (en) * 2004-04-30 2006-01-26 Nanosys, Inc. Systems and methods for nanowire growth and harvesting

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281965A (en) * 2000-03-31 2001-10-10 Ricoh Co Ltd Method of manufacturing contact-type charger, contact-type charger obtained by the method, charging method, and image recording apparatus
EP1170799A2 (en) * 2000-07-04 2002-01-09 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same
US20060019472A1 (en) * 2004-04-30 2006-01-26 Nanosys, Inc. Systems and methods for nanowire growth and harvesting

Also Published As

Publication number Publication date
WO2007145701A2 (en) 2007-12-21

Similar Documents

Publication Publication Date Title
WO2007145701A3 (en) Nanoscale wire methods and devices
SG152101A1 (en) An interconnect structure and a method of fabricating the same
WO2007061854A3 (en) Compliant base to increase contact for micro- or nano-fibers
WO2010002515A3 (en) Low-cost substrates having high-resistivity properties and methods for their manufacture
WO2006123335A3 (en) Building structures having electrically functional architectural surfaces
WO2007135076A3 (en) Patterning nanowires on surfaces for fabricating nanoscale electronic devices
WO2007120877A8 (en) Transfer surface for manufacturing a light emitting device
WO2008097860A3 (en) Groutless tile systems and method for making same
WO2008021791A3 (en) Nano structured phased hydrophobic layers on substrates
SG150467A1 (en) Interconnected-multi-element-lattice polishing pad
DE602007012890D1 (en) CONTACTING ELECTROCHROMICAL ARRANGEMENTS
TW200739972A (en) Light-emitting device and method for manufacturing the same
TW200730583A (en) Siloxane resin composition and the method for manufacturing the same
WO2007017195A3 (en) Metal effect pigments comprising a mixed inorganic/organic layer, method for the production of such metal effect pigments, and use thereof
WO2007021676A3 (en) Fuel cell component with coating including nanoparticles
WO2008051503A3 (en) Light-emitter-based devices with lattice-mismatched semiconductor structures
WO2007064597A3 (en) Uniform surfaces for hybrid material substrates and methods for making and using same
TW200633297A (en) Coupler with edge and broadside coupled sections
WO2007103249A3 (en) Methods of forming thermoelectric devices using islands of thermoelectric material and related structures
WO2007071723A3 (en) Optical article having an antistatic, antireflection coating and method of manufacturing same
WO2006041592A3 (en) Large-scale manufacturing process for the production of pharmaceutical compositions
WO2009034697A1 (en) Silicon structure, method for manufacturing the same, and sensor chip
WO2003053845A3 (en) Chemical functionalization nanolithography
WO2007089644A3 (en) Articles comprising polyester and ethylene copolymer
ATE430987T1 (en) POWER SEMICONDUCTOR MODULE WITH CONTACT SPRINGS

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07809006

Country of ref document: EP

Kind code of ref document: A2