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WO2007032406A1 - Resin composition for sealing filler, flip chip mounting method using same, and flip chip mounted article - Google Patents

Resin composition for sealing filler, flip chip mounting method using same, and flip chip mounted article Download PDF

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Publication number
WO2007032406A1
WO2007032406A1 PCT/JP2006/318192 JP2006318192W WO2007032406A1 WO 2007032406 A1 WO2007032406 A1 WO 2007032406A1 JP 2006318192 W JP2006318192 W JP 2006318192W WO 2007032406 A1 WO2007032406 A1 WO 2007032406A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
sealing filler
resin
semiconductor chip
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/318192
Other languages
French (fr)
Japanese (ja)
Inventor
Osamu Matsuzaka
Katsuhiko Yasu
Tomohiro Hirata
Takenori Ookubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2007535521A priority Critical patent/JPWO2007032406A1/en
Publication of WO2007032406A1 publication Critical patent/WO2007032406A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L91/00Compositions of oils, fats or waxes; Compositions of derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/293Organic, e.g. plastic
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    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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Definitions

  • the present invention relates to a resin composition for a sealing filler, a flip chip mounting method using the same, and a flip chip mounting product, and more specifically, is filled in a gap between a semiconductor chip and a printed circuit board.
  • the present invention relates to a resin composition for sealing filler, a flip chip mounting method using the same, and a flip chip mounted product.
  • a semiconductor chip is mounted on a printed circuit board.
  • a flip chip mounting method is used in which the bumps of the semiconductor chip and the electrodes of the printed circuit board are joined using solder or a eutectic metal to conduct.
  • the board materials are shifting from rigid materials such as glass epoxy to flexible materials such as polyimide film.
  • the difference in coefficient of linear expansion between the semiconductor chip and the printed circuit board also has a problem in connection reliability against thermal shock, and a sealing filler is used between the semiconductor chip and the printed circuit board for this improvement. It is common. This sealing filler relaxes the stress generated at the joint and improves connection reliability.
  • thermosetting liquid resin composition is applied or dropped in advance on a predetermined position of the semiconductor chip or the printed circuit board immediately before bonding, and then the bumps of the semiconductor chip and the printed circuit board are placed.
  • a method of sealing and filling the gap between the semiconductor chip and the printed circuit board by thermocompression bonding with the electrode of this type has been studied.
  • the sealing filler suitably used in this method is capable of maintaining an appropriate thickness after application and dripping, and has a gap between the semiconductor chip and the printed circuit board with an appropriate flowability during heat bonding. That it can be filled without heat, that there is no decomposition or foaming due to heating at the time of bonding, that it solidifies at an appropriate temperature and speed, and that there is no corrosive factor to the electrodes on the wiring board that has high electrical insulation when solidified, A low elastic modulus is required to relieve stress between peripheral members such as printed circuit boards, semiconductor chips, and solder resists.
  • an epoxy resin-based thermosetting resin is preferably used, and attempts have been made to lower the elastic modulus (see Patent Document 1).
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2004-10810
  • the epoxy thermosetting resin has a high water absorption and contains a large amount of ionic impurities due to its production method. Therefore, it is suitable for continuous voltage application tests under high temperature and high humidity!
  • ionic impurities generally cause a decrease in migration resistance
  • epichlorohydrin a compound containing a chlorine atom
  • the present invention is suitable for a continuous voltage application test under high temperature and high humidity by using a flip chip mounting method in which a sealing filler is arranged in advance.
  • Wiring circuit Sealing that does not induce electrode corrosion on the substrate and has a low elastic modulus and good stability at room temperature (25 ° C).
  • a resin composition for a sealing filler according to the present invention is a resin composition for a sealing filler used as an adhesive sealing filler in a gap between a semiconductor chip and a wiring circuit board.
  • the resin composition contains a polyolefin-based thermoplastic resin and a tackifier, and the chlorine ion concentration in the resin composition is more than 0 and not more than lOppm. .
  • the content of the polyolefin-based thermoplastic resin in the total solid content of the resin composition for sealing filler is On the other hand, it is 20 to 99% by weight.
  • the polyolefin thermoplastic resin is at least one selected from polyethylene, polypropylene, and a group force that also has polyoxymethylene power. It is characterized by being.
  • the tackifier is a rosin-based resin, terpene-based resin, terpene-phenol resin, aliphatic-based petroleum resin. It is characterized in that it is a resin selected from the group power consisting of fats, aromatic petroleum resins, and dicyclopentagen petroleum resins.
  • the water absorption of the resin composition for sealing filler is 2.5% by weight or less. To do.
  • the resin composition for sealing filler of the present invention is characterized in that an elastic modulus of the resin composition for sealing filler is 1, OOOMPa or less.
  • the resin composition for sealing filler is applied or pasted in advance to at least one of the opposing surfaces of the semiconductor chip and the printed circuit board.
  • the bumps of the semiconductor chip and the electrodes of the wiring circuit board are bonded by thermocompression to bond the semiconductor chip and the wiring circuit board, and at the same time, the gap between the semiconductor chip and the wiring circuit board is used for the sealing filler. It is characterized by sealing with a resin composition.
  • the flip chip mounted product of the present invention is characterized in that the resin composition for sealing filler is filled in a gap between the semiconductor chip and the printed circuit board.
  • the sealing filler in which the sealing filler is arranged in advance, by using the polyolefin-based thermoplastic resin composition, an appropriate thickness can be maintained after coating and dropping,
  • the gap between the semiconductor chip and the printed circuit board can be filled without gaps with an appropriate flowability during heat bonding, melting and solidifying at an appropriate speed that eliminates decomposition and foaming during heating, and is electrically insulated when solidified.
  • Sealing filler with excellent stability and no elastic corrosion factor to the electrode on the wiring board, elastic modulus power to relieve stress between members when solidified, storage at normal temperature (25 ° C) It is possible to provide a resin composition for use, a mounting method using the same, and a flip-chip mounted product.
  • FIG. 1 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.
  • FIG. 2 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.
  • FIG. 3 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.
  • FIG. 4 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.
  • FIG. 5 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for attaching a resin composition for a sheet-like sealing filler.
  • FIG. 6 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for attaching a resin composition for a sheet-like sealing filler.
  • FIG. 7 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for attaching a resin composition for a sheet-like sealing filler.
  • FIG. 8 is a schematic plan view of a migration resistance evaluation substrate in an example of the present invention.
  • FIG. 9 is a diagram showing the results of migration resistance evaluation in examples of the present invention.
  • the present invention provides a resin composition for a sealing filler containing a polyolefin-based thermoplastic resin as a sealing filler used in a flip chip mounting method in which a sealing filler is arranged in advance.
  • the polyolefin-based thermoplastic resin composition of the present invention can have an appropriate melting point for the bonding temperature by mixing some resin in an appropriate ratio, and can have a target heat resistance. It is. Since the thermoplastic resin composition does not cause a curing reaction due to heat, it is excellent in storage stability and has no limitation on the use time.
  • Examples of the polyolefin-based thermoplastic resin in the resin composition for sealing filler of the present invention include polyethylene, polypropylene, polyoxymethylene and the like.
  • Heat Flow of polyolefin resin sealing filler composition during bonding, suppression of decomposition and foaming, setting of appropriate melting and solidification time, and heat resistance of the package after bonding are crystalline, non- It can be freely adjusted by mixing crystalline polyolefin-based thermoplastic resin.
  • Crosslink density is low for the low modulus of elasticity of the resin composition for encapsulating fillers to relieve the stress generated by the difference in linear expansion coefficient of peripheral members such as wiring circuit boards, semiconductor chips and solder resists. It is preferable to use a straight chain resin having low crystallinity. From the viewpoint of satisfying the above properties in a well-balanced manner, polypropylene resin is preferred.
  • the content of the polyolefin-based thermoplastic resin is preferably 20 to 99% by weight, based on the total solid content of the resin composition for sealing filler, and is 50 to 95% by weight. It is more preferable that the amount is 60 to 90% by weight, and it is particularly preferable that the amount is 65 to 85% by weight. If this content is less than 20% by weight, the moisture resistance tends to be lowered, and if it exceeds 99% by weight, the adhesion tends to be lowered.
  • the polyolefin-based thermoplastic resin preferably has a water absorption rate at 25 ° C of more than 0 (zero) and not more than 2.5% by weight, and preferably not more than 1.0% by weight. More preferred is 0.1% by weight or less. When the water absorption rate exceeds 2.5% by weight, the migration resistance tends to decrease.
  • Polyolefin thermoplastic resins are particularly superior from the standpoint of low water absorption because they do not have hydrophilic groups V. By using polyolefin thermoplastic resins, the water absorption rate is naturally reduced. can do. These polyolefin resin can be used singly or in combination of two or more.
  • the resin composition for sealing filler of the present invention may be used in combination with a thermoplastic resin other than the polyolefin-based thermoplastic resin.
  • thermoplastic resin other than the polyolefin-based thermoplastic resin include polyvinylidene fluoride, polyester, polyacrylo-tolyl, polystyrene, polyamide, polyimide, and polyphenylene. These thermoplastic resins can be used singly or in combination of two or more according to the use conditions, for example, the use temperature.
  • the blending ratio of the polyolefin-based thermoplastic resin and the thermoplastic resin other than the polyolefin-based thermoplastic resin can be appropriately mixed at a desired ratio, but the total solid content of the resin composition for sealing fillers On the other hand, it is preferable to mix so that the content of the polyolefin-based thermoplastic resin is 20 to 99% by weight.
  • the sealing filler resin composition of the present invention preferably contains a tackifier from the viewpoint of improving adhesiveness.
  • the tackifier used in the present invention is (1) poly There is no particular limitation as long as it has good compatibility with polyolefin resin, (2) good adhesion to the substrate, and (3) good thermal stability. In general, the compatibility can be determined by observing turbidity or phase separation after heating under certain conditions, or measuring the cloud point. The adhesiveness can also be determined by a crosscut test or a bending test after forming a coating on a substrate. In addition, thermal stability can also determine forces such as hue change or viscosity change.
  • the tackifier used in the present invention is preferably a thermoplastic resin having a softness point of 5 to 180 ° C.
  • the softening point of the tackifier is more preferably 50 to 170 ° C, particularly preferably 60 to 160 ° C.
  • the softening point can be determined by the ring and ball method.
  • Examples of the tackifier include rosin-based resin, terpene-based resin, terpene-phenol resin, aliphatic-based petroleum resin, aromatic-based petroleum resin, dicyclopentagen-based petroleum resin. , Coumarone indene resin, styrene resin, isoprene resin, and the like. From the viewpoint of improving the adhesion between the chip and the flexible substrate, rosin-based resin, terbene-based resin, terpene phenol resin, and dicyclopentagen-based petroleum resin are preferable.
  • the content of tackifier is preferably 1 to 60% by weight, more preferably 5 to 50% by weight, based on the total solid content of the resin composition for sealing fillers. It is particularly preferably 10 to 40% by weight. If this content is less than 1% by weight, the adhesiveness tends to decrease, and if it exceeds 60% by weight, it tends to become brittle and tends to cause defects such as cracks.
  • additives can be blended with the sealing filler resin composition of the present invention in order to improve characteristics such as heat stability.
  • additives include antioxidants, antifoaming agents, silane coupling agents, inorganic or organic fillers, pigments, and the like.
  • the electrical insulation has a correlation with the dielectric constant of the resin composition for sealing filler, and a low-polarity material should be used for the resin composition for sealing filler. preferable.
  • electrode corrosion of the printed circuit board in a continuous voltage application test under high temperature and high humidity has a low affinity with moisture because it correlates with the water absorption and humidity of the resin composition for sealing filler. It is preferable to use a resin with less polar groups!
  • the resin composition for sealing filler of the present invention has a chlorine ion concentration of 0 (zero) from the viewpoint of improving migration resistance. It is preferable that it is 10 ppm or less. Similarly, the content of other ionic impurities is preferably small. Further, the chlorine ion concentration in the resin composition for sealing filler is preferably 5 ppm or less, more preferably 2 ppm or less.
  • a material containing chlorine atoms is used as a raw material and a catalyst for synthesizing the resin for sealing filler. This can be achieved by not using or reducing the amount used.
  • ionic impurities other than chloride ions include Na +, Li +, K +, Ca 2+ , Mg 2+ , Ba 2+ , Br ′′, SO 2 — and I—.
  • the resin composition for sealing filler of the present invention preferably has an elastic modulus of more than 0 (zero) and 1,000 MPa or less, more preferably 500 MPa or less. It is particularly preferable that it is less than or equal to lOOMPa.
  • the linear expansion coefficient is preferably 300 ppmZ ° C or less, more preferably 250 ppmZ ° C or less, and even more preferably 200 ppmZ ° C or less. If this elastic modulus exceeds 1, OOOMPa and the linear expansion coefficient exceeds 300 ppm / ° C, stress is generated between the materials constituting the flip chip mounting product, which tends to cause cracks and peeling.
  • the elastic modulus and linear expansion coefficient can be selected by adjusting the polymerization method of the resin for sealing filler, the catalyst used, stereoregularity, and the like.
  • the resin composition for sealing filler according to the present invention is preferably used for a flexible wiring board.
  • 1 to 4 are schematic cross-sectional views for explaining a process of a flip chip mounting method in which the above-described resin composition for sealing filler is applied onto a wiring circuit board and a semiconductor chip and a wiring circuit board are bonded together.
  • symbol shows the same or equivalent part.
  • a copper wiring 2 is formed on the upper surface of a film-like substrate 1 as a wiring circuit board except for a portion where a semiconductor chip is mounted.
  • the upper part is provided with metal plating 3 such as tin or gold.
  • This metal plating 3 has the ability to use tin or gold plating suitably. Can be used.
  • a solder resist 4 that is a heat-resistant coating material is formed on the copper wiring 2 as a protective film for patterns other than the joints.
  • the resin composition 6 for sealing filler is applied so as to cover the mounting position 5 where the semiconductor chip of such a film-like substrate 1 is mounted.
  • the resin composition 6 for sealing filler can be applied in a desired thickness and shape depending on the distance between the semiconductor chip and the film-like substrate 1, the size of the semiconductor chip, and the like.
  • the resin composition 6 for sealing filler may be dropped onto the mounting position 5 where the semiconductor chip of the film-like substrate 1 is mounted, or as described later, the resin filler for sheet-like sealing filler By pasting the composition, it can be placed at a predetermined mounting position 5, and the method and conditions for applying, dripping and pasting are not particularly limited.
  • the thickness of the resin composition 6 for sealing filler to be applied is generally about 50 to 70 ⁇ m, which depends on the height of the wiring. Dispensing can be mentioned as a general application and dripping method, and application is possible by heating the resin composition for sealing filler before application to the melting temperature.
  • the heating temperature is 140 to 250, more preferably 160 ° C to 220 ° C.
  • the semiconductor chip 10 has bumps 12 formed on its lower surface via metal posts 11.
  • the lower surface of the semiconductor chip 10 on which the bumps 12 are formed is opposed to the upper surface of the film-like substrate 1 on which the metal plating 3 is formed, and these semiconductor chips 10 and the film-like substrate are heated at a predetermined temperature.
  • the material 1 is pressed by the pressing device 15.
  • ultrasonic bonding or the like may be applied to form a uniform layer of the resin composition for sealing filler 6 by such ultrasonic bonding, thereby suppressing variations in mounting state. it can.
  • the bump 12 of the semiconductor chip 10 and the metal plating 3 of the film-like substrate 1 are bonded, and the bonding portion of the bump 12 and the metal plating 3 is joined.
  • the flip-chip mounting product 20 in which the resin composition 6 for sealing filler is filled and sealed in the vicinity of can be manufactured.
  • the resin composition for a sealing filler in the form of a sheet having a desired thickness and shape according to the distance between the semiconductor chip 10 and the film-like substrate 1, the size of the semiconductor chip, and the like.
  • Paste A description will be given of a case where 5 to 7 are schematic cross-sectional views illustrating a process of a flip chip mounting method in which a resin composition for a sheet-like sealing filler is bonded onto a printed circuit board to bond the semiconductor chip and the printed circuit board. .
  • the resin composition 6A for sheet-like sealing filler is pasted so as to cover the mounting position 5 of the semiconductor chip on the film-like substrate 1.
  • Examples of the pasting method include hot pressing.
  • a resin composition sheet for a sealing filler having an arbitrary shape is prepared and sealed by thermocompression bonding to a semiconductor chip or a printed circuit board while heating.
  • a resin composition layer for a stop filler can be formed.
  • the heating temperature is preferably 50 ° C to 160 ° C, more preferably 80 ° C to 130 ° C.
  • FIG. 5 shows the force with which the resin-like composition 6A for sheet-like sealing filler is in direct contact with the solder resist 4.
  • FIG. 5 shows an example, and it includes various embodiments without being limited to the illustrated example. .
  • the lower surface of the semiconductor chip 10 on which the bumps 12 are formed is opposed to the upper surface of the film-like substrate 1 on which the metal plating 3 is formed, and heated at a predetermined temperature. Force The semiconductor chip 10 and the film-like substrate 1 are pressed by the pressing device 15. At this time, ultrasonic bonding may be performed as in the case of FIG.
  • a flip-chip mounted product 20A can be manufactured in which the vicinity is sealed with a resin composition 6A for sheet-like sealing filler.
  • thermoplastic resin used in the resin composition for sealing filler of the present invention is excellent in stability, it is sealed in advance on a semiconductor chip or a printed circuit board.
  • the standing time there is no limitation on the standing time until the semiconductor chip and the printed circuit board are heated and bonded after the resin composition for filler is applied, dropped, and pasted.
  • the resin composition for sealing filler of the present invention there is no restriction on the standing time with the joining step after the resin composition sealing filler is applied, dropped or pasted.
  • the post-joining after-curing necessary for general thermosetting resin is not necessary, so that the process can be shortened.
  • Example [0043] Hereinafter, the present invention will be described more specifically based on examples. However, the present invention is not limited to the examples.
  • non-crystalline polypropylene resin (trade name: Letterstack 2780, manufactured by Huntsman), 25 parts by weight of non-crystalline polypropylene resin (trade name: Bestplast 792, manufactured by Degussa), and crystalline polypropylene resin Fat (trade name: S13B, manufactured by Sumitomo Mitsui Polyolefin) 1
  • a polyamide-based thermoplastic resin composition (trade name: Hybon XH055-6, manufactured by Hitachi Chemical Co., Ltd.) was melted at 200 ° C. (viscosity 3 Pa ⁇ s) to obtain an evaluation resin composition.
  • a styrene-butadiene rubber thermoplastic resin composition (trade name: Hibon 9610, manufactured by Hitachi Chemical Polymer Co., Ltd.) was melted at 180 ° C. (viscosity: 3.5 Pa's) to obtain a resin composition for evaluation.
  • thermosetting resin composition sealing filler (trade name: RC281C, manufactured by Hitachi Chemical Co., Ltd.) is applied to various shapes for various tests, cured at 150 ° C for 2 hours, and an evaluation test A piece (film) was prepared.
  • a resin composition for sealing filler was prepared by blending the above-mentioned polypropylene resin with 2% by weight of an antioxidant with respect to the total amount of the total resin, melted at 180 ° C, and a test piece for each evaluation was prepared. Produced.
  • Examples 1 to 4 and Comparative Example 1, 2 and 4 evaluation resin composition films were prepared by using a heat-resistant tape with a spacer and a glass plate subjected to a release treatment. A sample was heated on a glass plate to a predetermined temperature described later, the sample was melted on a glass plate, and a glass rod was used.
  • the tensile modulus of the evaluation resin composition is the width after the resin is formed into a film of about 50 m.
  • a test piece for evaluation cut into a strip of lcm and 4cm in length was measured using an autograph AGF-5KN manufactured by Shimadzu Corporation under the conditions of a temperature of 23 ° C, a chuck distance of 20 mm, and a pulling speed of 5 mmZ.
  • the linear expansion coefficient of the evaluation resin composition is the same as that of Rigaku's Thermoplus for the test specimens that were cut into strips 4 mm wide and 20 mm long after the resin composition was formed into a film with a thickness of about 50 m.
  • TMA8310 the distance between chucks was 10 mm, the heating rate was 10 ° CZ, and the load was 3 g.
  • the ionic impurity content of the evaluation resin composition was determined by placing approximately 2 g of the resin composition and approximately 18 g of pure water in a well-washed pressure-resistant container, extracting it in an environment of 121 ° CZ100% RH for 20 hours, and performing anion chromatography. Measurement was performed using a graph (DX-120: manufactured by Dionetas, column AS12A).
  • the migration resistance of the evaluation resin composition was evaluated using the migration resistance evaluation substrate shown in FIG. That is, as shown in FIG. 8, solder resist 4 is applied to a flexible substrate (a substrate in which a 10 m thick sprung copper wiring 2 is formed on a polyimide substrate 1 having a thickness of 25 ⁇ m and a wiring 30 ⁇ m pitch). (Product name: SN-9000, manufactured by Hitachi Chemical Co., Ltd.), and coating the evaluation resin composition 6 on the wiring surface to produce a sample. Cut out to a length of 30 mm and a width of 5 mm to prevent migration A substrate for property evaluation 30 was obtained.
  • reference numeral 31 indicates a portion where the solder resist 4 is applied and / or the solder resist is not applied.
  • the adhesion evaluation of the evaluation resin composition was evaluated according to the following criteria by visually observing the state when the sample after migration resistance evaluation was bent at 90 degrees. That is, in Table 1, a circle indicates a state in which the base material resin composition does not peel, and a back indicates a state in which the base material resin composition peels.
  • the polyolefin-based thermoplastic resin composition of Example 1 exhibits lower elasticity than the epoxy-based thermosetting resin composition of Comparative Example 3, and can relieve stress even when the linear expansion coefficient is taken into consideration. It is advantageous! When the epoxy thermosetting resin composition of Comparative Example 3 and the polypropylene resin resin of Comparative Example 4 were bent, the end force was easily peeled off.
  • the polyolefin thermoplastic thermoplastic compositions of Example 1 and Example 2 showed the lowest water absorption. Comparative Example 2 contained a larger amount of ionic impurities than other resin compositions. These evaluated physical properties can be considered as factors affecting the migration resistance.
  • Example 1 (indicated by curve A in the figure) was excellent in the above-described characteristics, and thus showed good migration resistance. Since Comparative Example 1 (indicated by curve B in the figure) has a high water absorption rate, Comparative Example 2 (indicated by curve C in the figure) has a high ionic impurity, so Comparative Example 3 (indicated by curve D in the figure) ) Has a high modulus of elasticity and low adhesion, resulting in a decrease in migration resistance. Note that the diagram of the measurement result of Comparative Example 1 had almost the same shape as the vertical axis.
  • the resin composition for sealing filler according to the present invention can maintain an appropriate thickness after application and dropping in the flip-chip mounting method, and has an appropriate flowability when heat-bonded.
  • the gap between the semiconductor chip and the printed circuit board can be filled without gaps, and it melts and solidifies at an appropriate speed that eliminates decomposition and foaming due to heating during bonding, and the electrical insulation is high when solidified. It has excellent corrosion stability at room temperature (25 ° C), which has a low modulus of elasticity to relieve stress between members during solidification. In addition, it has excellent anti-middle resistance and is useful as a flip chip mounted product.

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Abstract

Disclosed is a resin composition for sealing fillers which does not induce electrode corrosion in a wired circuit board during continuous voltage application test under high temperature, high humidity conditions, while having low elastic modulus and good stability at room temperature (25˚C). Also disclosed are a mounting method and a flip chip mounted article respectively using such a resin composition for sealing fillers. Specifically disclosed is a resin composition (6, 6A) for sealing fillers which is used as a sealing filler for bonding and sealing a space between a semiconductor chip (10) and a film-like base (1). This resin composition contains a polyolefin thermoplastic resin and an adhesiveness-imparting agent, and the chlorine ion concentration in the resin composition is more than 0 but not more than 10 ppm. The space between the semiconductor chip (10) and the film-like base (1) is filled with the resin composition (6, 6A), and a bump (11) of the semiconductor chip (10) and a metal plating (3) of the film-like base (1) are joined with each other.

Description

明 細 書  Specification

封止充填剤用樹脂組成物、それを用いたフリップチップ実装方法及びフ リップチップ実装品  Resin composition for sealing filler, flip chip mounting method and flip chip mounting product using the same

技術分野  Technical field

[0001] 本発明は、封止充填剤用榭脂組成物、それを用いたフリップチップ実装方法及び フリップチップ実装品に関し、さらに詳細には、半導体チップと配線回路基板との間 隙に充填される封止充填剤用榭脂組成物、それを用いたフリップチップ実装方法及 びフリップチップ実装品に関する。  TECHNICAL FIELD [0001] The present invention relates to a resin composition for a sealing filler, a flip chip mounting method using the same, and a flip chip mounting product, and more specifically, is filled in a gap between a semiconductor chip and a printed circuit board. The present invention relates to a resin composition for sealing filler, a flip chip mounting method using the same, and a flip chip mounted product.

背景技術  Background art

[0002] 電子機器の小型化、軽量化や薄型化が進み、それに伴 、半導体チップ及び配線 回路基板の小型化、軽量化及び薄型化も求められている。一般的に、半導体チップ は配線回路基板上に実装される。半導体チップ部品を配線回路基板上に実装する 方法として、半導体チップのバンプと配線回路基板の電極とを、半田ゃ共晶金属を 用いて接合させて導通させるフリップチップ実装方法が用いられている。また、配線 回路基板の小型化、軽量化及び薄型化のために、基板材料は、ガラスエポキシのよ うなリジッドな材料からポリイミドフィルムなどのフレキシブルな材料へと移行している。 前記フリップチップ実装方法では、半導体チップと配線回路基板の線膨張係数の差 力も熱衝撃に対する接続信頼性に問題があり、この改善のため半導体チップと配線 回路基板の間に封止充填剤を用いるのが一般的である。この封止充填剤により、接 合部分に発生する応力を緩和し接続信頼性を高めている。  [0002] As electronic devices become smaller, lighter, and thinner, semiconductor chips and printed circuit boards are required to be smaller, lighter, and thinner. Generally, a semiconductor chip is mounted on a printed circuit board. As a method for mounting a semiconductor chip component on a printed circuit board, a flip chip mounting method is used in which the bumps of the semiconductor chip and the electrodes of the printed circuit board are joined using solder or a eutectic metal to conduct. Also, in order to reduce the size, weight, and thickness of printed circuit boards, the board materials are shifting from rigid materials such as glass epoxy to flexible materials such as polyimide film. In the flip chip mounting method, the difference in coefficient of linear expansion between the semiconductor chip and the printed circuit board also has a problem in connection reliability against thermal shock, and a sealing filler is used between the semiconductor chip and the printed circuit board for this improvement. It is common. This sealing filler relaxes the stress generated at the joint and improves connection reliability.

[0003] 従来の封止充填剤をフリップチップ実装に利用するには、半導体チップと配線回路 基板を高温度で接合した後に、その間隙を低粘度の熱硬化性液状榭脂組成物を毛 細管現象により注入、充填し、熱硬化する方法が用いられていた。し力しこの方法で は、配線間隙や、半導体チップと配線回路基板との間隙がさらに狭まると (ファインピ ツチ化)、作業効率の低下や、充填が困難になるという問題があった。そのため、接 合直前に予め熱硬化性液状榭脂組成物を半導体チップ又は配線回路基板の所定 の位置に塗布、又は滴下しておき、その後で半導体チップのバンプと配線回路基板 の電極とを加熱圧着することにより、半導体チップ及び配線回路基板の間隙を封止 充填する方法が検討されて ヽる。 [0003] In order to use a conventional sealing filler for flip chip mounting, a semiconductor chip and a printed circuit board are bonded at a high temperature, and then a low-viscosity thermosetting liquid resin composition is inserted into the capillary through the gap. A method of injecting, filling, and thermosetting according to the phenomenon has been used. However, with this method, when the wiring gap or the gap between the semiconductor chip and the printed circuit board is further narrowed (fine pitch), there are problems that work efficiency is lowered and filling becomes difficult. Therefore, the thermosetting liquid resin composition is applied or dropped in advance on a predetermined position of the semiconductor chip or the printed circuit board immediately before bonding, and then the bumps of the semiconductor chip and the printed circuit board are placed. A method of sealing and filling the gap between the semiconductor chip and the printed circuit board by thermocompression bonding with the electrode of this type has been studied.

[0004] この方法に好適に用いられる封止充填剤には、塗布、滴下後に適度な厚みを保持 できること、加熱接合する際に適度な流れ性を持って半導体チップと配線回路基板 の間隙を隙間無く充填できること、接合時の加熱による分解や発泡がないこと、適当 な温度及び速度で固化すること、固化した時に電気絶縁性が高ぐ配線基板上の電 極への腐食要因を有しないこと、配線回路基板、半導体チップ、ソルダレジストなど の周辺部材間の応力緩和のため弾性率が小さいことが求められている。このような封 止充填剤としては、エポキシ榭脂系熱硬化性榭脂が好適に用いられており、弾性率 を下げる試みがなされて 、る(特許文献 1参照)。  [0004] The sealing filler suitably used in this method is capable of maintaining an appropriate thickness after application and dripping, and has a gap between the semiconductor chip and the printed circuit board with an appropriate flowability during heat bonding. That it can be filled without heat, that there is no decomposition or foaming due to heating at the time of bonding, that it solidifies at an appropriate temperature and speed, and that there is no corrosive factor to the electrodes on the wiring board that has high electrical insulation when solidified, A low elastic modulus is required to relieve stress between peripheral members such as printed circuit boards, semiconductor chips, and solder resists. As such a sealing filler, an epoxy resin-based thermosetting resin is preferably used, and attempts have been made to lower the elastic modulus (see Patent Document 1).

[0005] 特許文献 1 :特開 2004— 10810号公報  Patent Document 1: Japanese Patent Application Laid-Open No. 2004-10810

発明の開示  Disclosure of the invention

発明が解決しょうとする課題  Problems to be solved by the invention

[0006] し力しながら、エポキシ系熱硬化性榭脂は、吸水性が高ぐその製造法からイオン 性不純物を多く含有するため、高温高湿下での連続電圧印加試験にお!、て配線回 路基板の電極腐食を誘発し、回路がショートする問題があった。すなわち、一般的に イオン性不純物は、耐マイグレーション性を低下させる要因となり、エポキシ系熱硬化 性榭脂を製造する際に、原料としてェピクロルヒドリン (塩素原子を含む化合物)を用 いるため、これが原因で塩素イオンが多量に含まれていた。また、適度な温度及び速 度で硬化させるために弾性率の高 、硬化物しか提案できな 、ことや、常温での安定 性が悪いため、低温での保管が必要で使用可能時間が非常に短いという問題があ つた o [0006] However, the epoxy thermosetting resin has a high water absorption and contains a large amount of ionic impurities due to its production method. Therefore, it is suitable for continuous voltage application tests under high temperature and high humidity! There was a problem that the circuit was short-circuited by inducing electrode corrosion of the wiring circuit board. In other words, ionic impurities generally cause a decrease in migration resistance, and epichlorohydrin (a compound containing a chlorine atom) is used as a raw material in the production of epoxy thermosetting resins. This caused a large amount of chloride ions. In addition, because it can be cured at an appropriate temperature and speed, it can only propose a cured product with a high elastic modulus, and because it is not stable at room temperature, it must be stored at a low temperature and has a very long usable time. There was a problem of short o

[0007] 本発明は、上記従来技術の問題点に鑑み、予め封止充填剤を配置しておくフリツ プチップ実装方法にぉ 、て、高温高湿下での連続電圧印加試験にお!、て配線回路 基板の電極腐食を誘発せず、弾性率が低ぐ常温 (25°C)での安定性が良好な封止 充填剤用榭脂糸且成物、それを用いたフリップチップ実装方法、及びフリップチップ実 装品を提供することを目的とする。  [0007] In view of the above-mentioned problems of the prior art, the present invention is suitable for a continuous voltage application test under high temperature and high humidity by using a flip chip mounting method in which a sealing filler is arranged in advance. Wiring circuit Sealing that does not induce electrode corrosion on the substrate and has a low elastic modulus and good stability at room temperature (25 ° C). Filler grease and composition, and flip chip mounting method using the same. The purpose is to provide a flip chip product.

課題を解決するための手段 [0008] すなわち、本発明による封止充填剤用榭脂組成物は、半導体チップと配線回路基 板との間隙の接着封止充填剤に用いられる封止充填剤用榭脂組成物であって、前 記榭脂組成物がポリオレフイン系熱可塑性榭脂及び粘着性付与剤を含有し、且つ、 前記榭脂組成物中の塩素イオン濃度が 0を超えて lOppm以下であることを特徴とす る。 Means for solving the problem That is, a resin composition for a sealing filler according to the present invention is a resin composition for a sealing filler used as an adhesive sealing filler in a gap between a semiconductor chip and a wiring circuit board. The resin composition contains a polyolefin-based thermoplastic resin and a tackifier, and the chlorine ion concentration in the resin composition is more than 0 and not more than lOppm. .

[0009] また、本発明の封止充填剤用榭脂組成物にあっては、前記ポリオレフイン系熱可塑 性榭脂の含有量が、前記封止充填剤用榭脂組成物の全固形分に対して、 20〜99 重量%であることを特徴とする。  [0009] Further, in the resin composition for sealing filler of the present invention, the content of the polyolefin-based thermoplastic resin in the total solid content of the resin composition for sealing filler is On the other hand, it is 20 to 99% by weight.

[0010] また、本発明の封止充填剤用榭脂組成物にあっては、前記ポリオレフイン系熱可塑 性榭脂が、ポリエチレン、ポリプロピレン、及びポリオキシメチレン力もなる群力も選択 される少なくとも 1種であることを特徴とする。  [0010] Further, in the resin composition for sealing filler of the present invention, the polyolefin thermoplastic resin is at least one selected from polyethylene, polypropylene, and a group force that also has polyoxymethylene power. It is characterized by being.

[0011] また、本発明の封止充填剤用榭脂組成物にあっては、前記粘着性付与剤が、ロジ ン系榭脂、テルペン系榭脂、テルペン フエノール榭脂、脂肪族系石油榭脂、芳香 族系石油榭脂、及びジシクロペンタジェン系石油榭脂からなる群力も選択される榭 脂であることを特徴とする。 [0011] Further, in the resin composition for sealing filler of the present invention, the tackifier is a rosin-based resin, terpene-based resin, terpene-phenol resin, aliphatic-based petroleum resin. It is characterized in that it is a resin selected from the group power consisting of fats, aromatic petroleum resins, and dicyclopentagen petroleum resins.

[0012] また、本発明の封止充填剤用榭脂組成物にあっては、前記封止充填剤用榭脂組 成物の吸水率が、 2. 5重量%以下であることを特徴とする。  [0012] Further, in the resin composition for sealing filler of the present invention, the water absorption of the resin composition for sealing filler is 2.5% by weight or less. To do.

[0013] また、本発明の封止充填剤用榭脂組成物にあっては、前記封止充填剤用榭脂組 成物の弾性率が、 1, OOOMPa以下であることを特徴とする。  [0013] In addition, the resin composition for sealing filler of the present invention is characterized in that an elastic modulus of the resin composition for sealing filler is 1, OOOMPa or less.

[0014] また、本発明のフリップチップ実装方法にあっては、半導体チップ及び配線回路基 板の少なくとも一方の対向面に、前記封止充填剤用榭脂組成物を予め塗布又は貼り 付けした後、前記半導体チップのバンプと前記配線回路基板の電極とを加熱圧着す ることにより前記半導体チップ及び配線回路基板を接合し、同時に前記半導体チッ プ及び配線回路基板の間隙を前記封止充填剤用榭脂組成物により封止することを 特徴とする。  [0014] Further, in the flip chip mounting method of the present invention, the resin composition for sealing filler is applied or pasted in advance to at least one of the opposing surfaces of the semiconductor chip and the printed circuit board. The bumps of the semiconductor chip and the electrodes of the wiring circuit board are bonded by thermocompression to bond the semiconductor chip and the wiring circuit board, and at the same time, the gap between the semiconductor chip and the wiring circuit board is used for the sealing filler. It is characterized by sealing with a resin composition.

[0015] また、本発明のフリップチップ実装品にあっては、半導体チップと配線回路基板と の間隙に、前記封止充填剤用榭脂組成物が充填されていることを特徴とする。  [0015] In addition, the flip chip mounted product of the present invention is characterized in that the resin composition for sealing filler is filled in a gap between the semiconductor chip and the printed circuit board.

発明の効果 [0016] 本発明によれば、予め封止充填剤を配置しておくフリップチップ実装方法において 、ポリオレフイン系熱可塑性榭脂組成物を用いることにより、塗布、滴下後に適度な厚 みを保持でき、加熱接合する際に適度な流れ性を持って半導体チップと配線回路基 板の間隙を隙間無く充填でき、接合時の加熱による分解や発泡がなぐ適当な速度 で融解、固化し、固化時に電気絶縁性が高ぐ配線基板上の電極への腐食要因を 有せず、固化時に部材間の応力緩和のため弾性率力 、さぐ常温 (25°C)での保管 安定性に優れた封止充填剤用榭脂組成物、及びそれを用いた実装方法、フリツプチ ップ実装品を提供することができるという効果を奏する。 The invention's effect [0016] According to the present invention, in the flip chip mounting method in which the sealing filler is arranged in advance, by using the polyolefin-based thermoplastic resin composition, an appropriate thickness can be maintained after coating and dropping, The gap between the semiconductor chip and the printed circuit board can be filled without gaps with an appropriate flowability during heat bonding, melting and solidifying at an appropriate speed that eliminates decomposition and foaming during heating, and is electrically insulated when solidified. Sealing filler with excellent stability and no elastic corrosion factor to the electrode on the wiring board, elastic modulus power to relieve stress between members when solidified, storage at normal temperature (25 ° C) It is possible to provide a resin composition for use, a mounting method using the same, and a flip-chip mounted product.

図面の簡単な説明  Brief Description of Drawings

[0017] [図 1]図 1は、封止充填剤用榭脂組成物を塗布するフリップチップ実装方法のプロセ スを説明する半導体チップ及び配線回路基板の概略断面図である。  FIG. 1 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

[図 2]図 2は、封止充填剤用榭脂組成物を塗布するフリップチップ実装方法のプロセ スを説明する半導体チップ及び配線回路基板の概略断面図である。  FIG. 2 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

[図 3]図 3は、封止充填剤用榭脂組成物を塗布するフリップチップ実装方法のプロセ スを説明する半導体チップ及び配線回路基板の概略断面図である。  FIG. 3 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

[図 4]図 4は、封止充填剤用榭脂組成物を塗布するフリップチップ実装方法のプロセ スを説明する半導体チップ及び配線回路基板の概略断面図である。  FIG. 4 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

[図 5]図 5は、シート状封止充填剤用榭脂組成物を貼り付けるフリップチップ実装方法 のプロセスを説明する半導体チップ及び配線回路基板の概略断面図である。  FIG. 5 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for attaching a resin composition for a sheet-like sealing filler.

[図 6]図 6は、シート状封止充填剤用榭脂組成物を貼り付けるフリップチップ実装方法 のプロセスを説明する半導体チップ及び配線回路基板の概略断面図である。  FIG. 6 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for attaching a resin composition for a sheet-like sealing filler.

[図 7]図 7は、シート状封止充填剤用榭脂組成物を貼り付けるフリップチップ実装方法 のプロセスを説明する半導体チップ及び配線回路基板の概略断面図である。  FIG. 7 is a schematic cross-sectional view of a semiconductor chip and a printed circuit board for explaining a process of a flip chip mounting method for attaching a resin composition for a sheet-like sealing filler.

[図 8]図 8は、本発明の実施例における耐マイグレーション性評価用基板の概略平面 図である。  FIG. 8 is a schematic plan view of a migration resistance evaluation substrate in an example of the present invention.

[図 9]図 9は、本発明の実施例における耐マイグレーション性評価の結果を示す線図 である。  FIG. 9 is a diagram showing the results of migration resistance evaluation in examples of the present invention.

符号の説明 [0018] 1 フィルム状基材 Explanation of symbols [0018] 1 Film substrate

2 銅配線  2 Copper wiring

3 金属めつき  3 Metal plating

4 ソルダーレジスト  4 Solder resist

5 半導体チップの実装位置  5 Mounting position of semiconductor chip

6 封止充填剤用榭脂組成物  6 Resin composition for sealing filler

6A シート状封止充填剤用榭脂組成物  6A Grease composition for sheet-like sealing filler

10 半導体チップ  10 Semiconductor chip

11 メタルポスト  11 Metal post

12 バンプ  12 Bump

15 押圧装置  15 Pressing device

20, 20A フリップチップ実装品  20, 20A flip chip mounted product

30 耐マイグレーション性評価用基板  30 PCB for migration resistance evaluation

31 ソルダーレジスト未塗布部分  31 Solder resist uncoated part

発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION

[0019] 以下、本発明による封止充填剤用榭脂組成物、それを用いたフリップチップ実装方 法、及びフリップチップ実装品をその好適な実施の形態に即して詳細に説明する。  Hereinafter, the resin composition for sealing filler according to the present invention, a flip chip mounting method using the same, and a flip chip mounted product will be described in detail according to preferred embodiments thereof.

[0020] [封止充填剤用榭脂組成物]  [0020] [Resin composition for sealing filler]

本発明は、予め封止充填剤を配置しておくフリップチップ実装方法に用いる封止充 填剤として、ポリオレフイン系熱可塑性榭脂を含む封止充填剤用榭脂組成物を提供 するものである。本発明のポリオレフイン系熱可塑性榭脂組成物は、いくつかの榭脂 を適度な比率で混合することにより接合温度に適切な融点を持たせること、 目標とす る耐熱性を持たせることが可能である。熱可塑性榭脂組成物は熱による硬化反応を 起こさないため、保管安定性に優れ、使用時間の制限が無いというものになる。  The present invention provides a resin composition for a sealing filler containing a polyolefin-based thermoplastic resin as a sealing filler used in a flip chip mounting method in which a sealing filler is arranged in advance. . The polyolefin-based thermoplastic resin composition of the present invention can have an appropriate melting point for the bonding temperature by mixing some resin in an appropriate ratio, and can have a target heat resistance. It is. Since the thermoplastic resin composition does not cause a curing reaction due to heat, it is excellent in storage stability and has no limitation on the use time.

[0021] 本発明の封止充填剤用榭脂組成物におけるポリオレフイン系熱可塑性榭脂として は、例えば、ポリエチレン、ポリプロピレン、ポリオキシメチレン等が挙げられる。加熱 接合時のポリオレフイン系封止充填剤用榭脂組成物の流れ性、分解や発泡の抑制、 適度な融解、固化時間の設定、また、接合後のパッケージの耐熱性は、結晶性、非 結晶性のポリオレフイン系熱可塑性榭脂を混合することで自由に調整可能である。配 線回路基板、半導体チップ、ソルダレジストなどの周辺部材の線膨張係数の違いに よる発生応力緩和のための封止充填剤用榭脂組成物の低弾性率ィ匕には、架橋密度 が低ぐ結晶性の低い直鎖状榭脂を用いることが好ましい。上記特性をバランス良く 満足できる観点から、ポリプロピレン榭脂が好ま 、。 [0021] Examples of the polyolefin-based thermoplastic resin in the resin composition for sealing filler of the present invention include polyethylene, polypropylene, polyoxymethylene and the like. Heat Flow of polyolefin resin sealing filler composition during bonding, suppression of decomposition and foaming, setting of appropriate melting and solidification time, and heat resistance of the package after bonding are crystalline, non- It can be freely adjusted by mixing crystalline polyolefin-based thermoplastic resin. Crosslink density is low for the low modulus of elasticity of the resin composition for encapsulating fillers to relieve the stress generated by the difference in linear expansion coefficient of peripheral members such as wiring circuit boards, semiconductor chips and solder resists. It is preferable to use a straight chain resin having low crystallinity. From the viewpoint of satisfying the above properties in a well-balanced manner, polypropylene resin is preferred.

[0022] ポリオレフイン系熱可塑性榭脂の含有量は、封止充填剤用榭脂組成物の全固形分 量に対し、 20〜99重量%であることが好ましぐ 50〜95%重量であることがより好ま しぐ 60〜90重量%であることが特に好ましぐ 65〜85重量%であることが極めて好 ましい。この含有量が 20重量%未満では、耐湿性が低下する傾向があり、 99重量% を超えると接着性が低下する傾向がある。  [0022] The content of the polyolefin-based thermoplastic resin is preferably 20 to 99% by weight, based on the total solid content of the resin composition for sealing filler, and is 50 to 95% by weight. It is more preferable that the amount is 60 to 90% by weight, and it is particularly preferable that the amount is 65 to 85% by weight. If this content is less than 20% by weight, the moisture resistance tends to be lowered, and if it exceeds 99% by weight, the adhesion tends to be lowered.

[0023] 前記ポリオレフイン系熱可塑性榭脂は 25°Cでの吸水率が 0 (ゼロ)を超えて 2. 5重 量%以下であるものが好ましぐ 1. 0重量%以下であるものがより好ましぐ 0. 1重量 %以下であることが特に好ましい。吸水率が 2. 5重量%を超えると耐マイグレーショ ン性が低下する傾向がある。ポリオレフイン系熱可塑性榭脂は、親水基を有していな V、ので吸水性が低 、と 、う観点から特に優れており、ポリオレフイン系熱可塑性榭脂 を使用することにより、自ずと吸水率を低くすることができる。これらのポリオレフイン系 熱可塑性榭脂は、一種を単独で又は二種以上を組み合わせて用いることができる。  [0023] The polyolefin-based thermoplastic resin preferably has a water absorption rate at 25 ° C of more than 0 (zero) and not more than 2.5% by weight, and preferably not more than 1.0% by weight. More preferred is 0.1% by weight or less. When the water absorption rate exceeds 2.5% by weight, the migration resistance tends to decrease. Polyolefin thermoplastic resins are particularly superior from the standpoint of low water absorption because they do not have hydrophilic groups V. By using polyolefin thermoplastic resins, the water absorption rate is naturally reduced. can do. These polyolefin resin can be used singly or in combination of two or more.

[0024] また、本発明の封止充填剤用榭脂組成物には、前記ポリオレフイン系熱可塑性榭 脂以外の熱可塑性榭脂を併用することができる。ポリオレフイン系熱可塑性榭脂以外 の熱可塑性榭脂としては、例えば、ポリフッ化ビ-リデン、ポリエステル、ポリアクリロ- トリル、ポリスチレン、ポリアミド、ポリイミド、ポリフエ-レン等が挙げられる。これらの熱 可塑性榭脂は、使用条件、例えば使用温度に合わせ、一種を単独で又は二種以上 を組み合わせて用いることができる。ポリオレフイン系熱可塑性榭脂とポリオレフイン 系熱可塑性榭脂以外の熱可塑性榭脂との配合割合は、適宜所望の割合で配合する ことができるが、封止充填剤用榭脂組成物の全固形分量に対し、ポリオレフイン系熱 可塑性榭脂の含有量が 20〜99重量%となるように混合することが好ましい。  [0024] In addition, the resin composition for sealing filler of the present invention may be used in combination with a thermoplastic resin other than the polyolefin-based thermoplastic resin. Examples of the thermoplastic resin other than the polyolefin-based thermoplastic resin include polyvinylidene fluoride, polyester, polyacrylo-tolyl, polystyrene, polyamide, polyimide, and polyphenylene. These thermoplastic resins can be used singly or in combination of two or more according to the use conditions, for example, the use temperature. The blending ratio of the polyolefin-based thermoplastic resin and the thermoplastic resin other than the polyolefin-based thermoplastic resin can be appropriately mixed at a desired ratio, but the total solid content of the resin composition for sealing fillers On the other hand, it is preferable to mix so that the content of the polyolefin-based thermoplastic resin is 20 to 99% by weight.

[0025] また、本発明の封止充填剤榭脂組成物には、接着性を向上させる観点から、粘着 性付与剤を含有させることが好ましい。本発明で使用する粘着性付与剤は、(1)ポリ ォレフィン系熱可塑性榭脂との相溶性が良いこと、(2)基材との接着性が良いこと、 及び(3)熱安定性が良いものであれば特に制限はない。相溶性は、一般的に、一定 条件で加熱した後の濁りや相分離の観察、又は曇点を測定することで判別できる。 接着性は、クロスカット試験、又は基材に塗膜形成後の折り曲げ試験など力も判別で きる。また、熱安定性は、色相変化又は粘度変化など力も判別できる。さらに、本発 明で使用する粘着性付与剤は、軟ィ匕点が 5〜180°Cである熱可塑性榭脂が好ましい 。接着性、耐熱性を向上できる観点から、粘着性付与剤の軟ィ匕点は 50〜170°Cであ ることがより好ましぐ 60〜160°Cであることが特に好ましい。軟化点は、環球法等で 柳』定することができる。 [0025] The sealing filler resin composition of the present invention preferably contains a tackifier from the viewpoint of improving adhesiveness. The tackifier used in the present invention is (1) poly There is no particular limitation as long as it has good compatibility with polyolefin resin, (2) good adhesion to the substrate, and (3) good thermal stability. In general, the compatibility can be determined by observing turbidity or phase separation after heating under certain conditions, or measuring the cloud point. The adhesiveness can also be determined by a crosscut test or a bending test after forming a coating on a substrate. In addition, thermal stability can also determine forces such as hue change or viscosity change. Furthermore, the tackifier used in the present invention is preferably a thermoplastic resin having a softness point of 5 to 180 ° C. From the viewpoint of improving adhesiveness and heat resistance, the softening point of the tackifier is more preferably 50 to 170 ° C, particularly preferably 60 to 160 ° C. The softening point can be determined by the ring and ball method.

[0026] 粘着性付与剤としては、例えば、ロジン系榭脂、テルペン系榭脂、テルペンーフエノ ール榭脂、脂肪族系石油榭脂、芳香族系石油榭脂、ジシクロペンタジェン系石油榭 脂、クマロン インデン榭脂、スチレン系榭脂、イソプレン系榭脂等が挙げられる。チ ップ及びフレキシブル基板との粘着性を向上できる観点から、ロジン系榭脂、テルべ ン系榭脂、テルペン フエノール榭脂、ジシクロペンタジェン系石油樹脂が好ましい 。粘着性付与剤の含有量は、封止充填剤用榭脂組成物の全固形分量に対し、 1〜6 0重量%であることが好ましぐ 5〜50重量%であることがより好ましぐ 10〜40重量 %であることが特に好ましい。この含有量が 1重量%未満では、接着性が低下する傾 向があり、 60重量%を超えると脆くなり易ぐクラック等の不具合が発生する傾向があ る。  [0026] Examples of the tackifier include rosin-based resin, terpene-based resin, terpene-phenol resin, aliphatic-based petroleum resin, aromatic-based petroleum resin, dicyclopentagen-based petroleum resin. , Coumarone indene resin, styrene resin, isoprene resin, and the like. From the viewpoint of improving the adhesion between the chip and the flexible substrate, rosin-based resin, terbene-based resin, terpene phenol resin, and dicyclopentagen-based petroleum resin are preferable. The content of tackifier is preferably 1 to 60% by weight, more preferably 5 to 50% by weight, based on the total solid content of the resin composition for sealing fillers. It is particularly preferably 10 to 40% by weight. If this content is less than 1% by weight, the adhesiveness tends to decrease, and if it exceeds 60% by weight, it tends to become brittle and tends to cause defects such as cracks.

[0027] また、本発明の封止充填剤榭脂組成物には、耐熱安定性等の特性向上のため、 多種の添加剤を配合することができる。このような添加剤としては、例えば、酸化防止 剤、消泡剤、シランカップリング剤、無機あるいは有機フィラー、顔料等が挙げられる  [0027] In addition, various additives can be blended with the sealing filler resin composition of the present invention in order to improve characteristics such as heat stability. Examples of such additives include antioxidants, antifoaming agents, silane coupling agents, inorganic or organic fillers, pigments, and the like.

[0028] 電気絶縁性は交流絶縁の場合、封止充填剤用榭脂組成物の誘電率との相関があ り、封止充填剤用榭脂組成物には極性の低い材料を用いることが好ましい。また、高 温高湿下での連続電圧印加試験における配線回路基板の電極腐食は、封止充填 剤用榭脂組成物の吸水性や湿度との相関があるため、水分との親和性が低 、極性 基の少な!/ヽ榭脂を用いることが好ま 、。 [0029] また、本発明の封止充填剤用榭脂組成物は、耐マイグレーション性を向上させると の観点から、封止充填剤用榭脂組成物中の塩素イオン濃度が、 0 (ゼロ)を超えて 10 ppm以下であることが好ましい。また、同様に他のイオン性不純物の含有量が少ない ことが好ましい。更に塩素イオン濃度は、封止充填剤用榭脂組成物中、 5ppm以下 であることが好ましぐ 2ppm以下であることがより好ましい。 [0028] In the case of alternating current insulation, the electrical insulation has a correlation with the dielectric constant of the resin composition for sealing filler, and a low-polarity material should be used for the resin composition for sealing filler. preferable. In addition, electrode corrosion of the printed circuit board in a continuous voltage application test under high temperature and high humidity has a low affinity with moisture because it correlates with the water absorption and humidity of the resin composition for sealing filler. It is preferable to use a resin with less polar groups! [0029] Further, the resin composition for sealing filler of the present invention has a chlorine ion concentration of 0 (zero) from the viewpoint of improving migration resistance. It is preferable that it is 10 ppm or less. Similarly, the content of other ionic impurities is preferably small. Further, the chlorine ion concentration in the resin composition for sealing filler is preferably 5 ppm or less, more preferably 2 ppm or less.

[0030] 封止充填剤用榭脂組成物中の塩素イオン濃度を lOppm以下とするためには、封 止充填剤用榭脂を合成するときの原料及び触媒等に塩素原子を含むものを使用し ない又は使用量を低量にすることで達成できる。塩素イオン以外のイオン性不純物と しては、 Na+, Li+, K+, Ca2+, Mg2+, Ba2+, Br", SO 2— , I—等が挙げられる。 [0030] In order to reduce the chlorine ion concentration in the resin composition for sealing filler to 10 ppm or less, a material containing chlorine atoms is used as a raw material and a catalyst for synthesizing the resin for sealing filler. This can be achieved by not using or reducing the amount used. Examples of ionic impurities other than chloride ions include Na +, Li +, K +, Ca 2+ , Mg 2+ , Ba 2+ , Br ″, SO 2 — and I—.

4  Four

[0031] また、本発明の封止充填剤用榭脂組成物は、弾性率が 0 (ゼロ)を超えて 1, 000M Pa以下であることが好ましぐ 500MPa以下であることがより好ましぐ lOOMPa以下 であることが特に好ましい。更に、線膨張係数が 300ppmZ°C以下であることが好ま しぐ 250ppmZ°C以下であることがより好ましぐ 200ppmZ°C以下であることが特 に好ましい。この弾性率が 1, OOOMPaを超え、線膨張係数が 300ppm/°Cを超え るとフリップチップ実装品を構成する材料間に応力が発生し、クラックや剥離の原因と なる傾向がある。上記弾性率や線膨張係数は、封止充填剤用榭脂の重合法や使用 する触媒、立体規則性等を調整することにより、好ましい弾性率及び線膨張係数を 選択することができる。本発明による封止充填剤用榭脂組成物は、フレキシブル配線 板に用いることが好ましい。  [0031] Further, the resin composition for sealing filler of the present invention preferably has an elastic modulus of more than 0 (zero) and 1,000 MPa or less, more preferably 500 MPa or less. It is particularly preferable that it is less than or equal to lOOMPa. Further, the linear expansion coefficient is preferably 300 ppmZ ° C or less, more preferably 250 ppmZ ° C or less, and even more preferably 200 ppmZ ° C or less. If this elastic modulus exceeds 1, OOOMPa and the linear expansion coefficient exceeds 300 ppm / ° C, stress is generated between the materials constituting the flip chip mounting product, which tends to cause cracks and peeling. The elastic modulus and linear expansion coefficient can be selected by adjusting the polymerization method of the resin for sealing filler, the catalyst used, stereoregularity, and the like. The resin composition for sealing filler according to the present invention is preferably used for a flexible wiring board.

[0032] [フリップチップ実装方法及びフリップチップ実装品]  [Flip chip mounting method and flip chip mounting product]

次に、本発明によるフリップチップ実装方法について説明する。図 1〜図 4は、配線 回路基板上に上述した封止充填剤用榭脂組成物を塗布し半導体チップ及び配線回 路基板を接合するフリップチップ実装方法のプロセスを説明する概略断面図である。 なお、各図中、同一符号は同一又は相当部分を示す。  Next, the flip chip mounting method according to the present invention will be described. 1 to 4 are schematic cross-sectional views for explaining a process of a flip chip mounting method in which the above-described resin composition for sealing filler is applied onto a wiring circuit board and a semiconductor chip and a wiring circuit board are bonded together. . In addition, in each figure, the same code | symbol shows the same or equivalent part.

[0033] 図 1に示すように、配線回路基板としてのフィルム状基材 1の上面には、半導体チッ プが実装される部分等を除いて銅配線 2が形成されており、この銅配線 2上の所定部 分にはすず又は金などの金属めつき 3が施されている。この金属めつき 3としては、す ず又は金めつきを好適に使用できる力 他の金属のめっきであっても良ぐ同様に使 用できる。さらに、接合部分以外のパターンなどの保護膜として、耐熱性コーティング 材であるソルダーレジスト 4が銅配線 2上に形成されている。 As shown in FIG. 1, a copper wiring 2 is formed on the upper surface of a film-like substrate 1 as a wiring circuit board except for a portion where a semiconductor chip is mounted. The upper part is provided with metal plating 3 such as tin or gold. This metal plating 3 has the ability to use tin or gold plating suitably. Can be used. Furthermore, a solder resist 4 that is a heat-resistant coating material is formed on the copper wiring 2 as a protective film for patterns other than the joints.

[0034] 次に、図 2に示すように、このようなフィルム状基材 1の半導体チップが実装される実 装位置 5を覆って、封止充填剤用榭脂組成物 6を塗布する。封止充填剤用榭脂組成 物 6は、半導体チップとフィルム状基材 1との距離、半導体チップの大きさなどに応じ て、所望の厚さ、形状に塗布することができる。或いは、封止充填剤用榭脂組成物 6 をフィルム状基材 1の半導体チップが実装される実装位置 5に滴下しても良ぐ又は 後述するようにシート状の封止充填剤用榭脂組成物を貼り付けることにより所定の実 装位置 5に配置することができ、これらの塗布、滴下、貼り付けの方法や条件は、特 に限定されない。 Next, as shown in FIG. 2, the resin composition 6 for sealing filler is applied so as to cover the mounting position 5 where the semiconductor chip of such a film-like substrate 1 is mounted. The resin composition 6 for sealing filler can be applied in a desired thickness and shape depending on the distance between the semiconductor chip and the film-like substrate 1, the size of the semiconductor chip, and the like. Alternatively, the resin composition 6 for sealing filler may be dropped onto the mounting position 5 where the semiconductor chip of the film-like substrate 1 is mounted, or as described later, the resin filler for sheet-like sealing filler By pasting the composition, it can be placed at a predetermined mounting position 5, and the method and conditions for applying, dripping and pasting are not particularly limited.

[0035] 塗布する封止充填剤用榭脂組成物 6の厚さは、一般的に配線の高さ等に依存する 力 約 50〜70 μ mである。一般的な塗布、滴下法としてはデイスペンスが挙げられ、 塗布前の封止充填剤用榭脂組成物を溶融温度まで加温しておくことで塗布が可能と なる。加熱温度としては、 140で〜250でカ 子ましく、 160°C〜220°Cがより好ましい  [0035] The thickness of the resin composition 6 for sealing filler to be applied is generally about 50 to 70 μm, which depends on the height of the wiring. Dispensing can be mentioned as a general application and dripping method, and application is possible by heating the resin composition for sealing filler before application to the melting temperature. The heating temperature is 140 to 250, more preferably 160 ° C to 220 ° C.

[0036] 半導体チップ 10には、図 3に示すように、その下面にメタルポスト 11を介してバンプ 12が形成されている。バンプ 12が形成されている半導体チップ 10の下面を金属め つき 3が形成されているフィルム状基材 1の上面に対向させ、所定温度で加熱しなが らこれらの半導体チップ 10とフィルム状基材 1とを押圧装置 15によって押圧する。こ の時、超音波などを印加して接合しても良ぐこのような超音波接合によって均一な 封止充填剤用榭脂組成物 6の層が形成され、実装状態のバラツキを抑えることがで きる。 As shown in FIG. 3, the semiconductor chip 10 has bumps 12 formed on its lower surface via metal posts 11. The lower surface of the semiconductor chip 10 on which the bumps 12 are formed is opposed to the upper surface of the film-like substrate 1 on which the metal plating 3 is formed, and these semiconductor chips 10 and the film-like substrate are heated at a predetermined temperature. The material 1 is pressed by the pressing device 15. At this time, ultrasonic bonding or the like may be applied to form a uniform layer of the resin composition for sealing filler 6 by such ultrasonic bonding, thereby suppressing variations in mounting state. it can.

[0037] 以上のようにして、図 4に示すように、半導体チップ 10のバンプ 12とフィルム状基材 1の金属めつき 3とが接合され、かつバンプ 12と金属めつき 3との接合部の近傍を封 止充填剤用榭脂組成物 6が充填、封止されたフリップチップ実装品 20を製造するこ とがでさる。  As described above, as shown in FIG. 4, the bump 12 of the semiconductor chip 10 and the metal plating 3 of the film-like substrate 1 are bonded, and the bonding portion of the bump 12 and the metal plating 3 is joined. Thus, the flip-chip mounting product 20 in which the resin composition 6 for sealing filler is filled and sealed in the vicinity of can be manufactured.

[0038] 次に、半導体チップ 10とフィルム状基材 1との距離、半導体チップの大きさなどに 応じて、所望の厚さ、形状に成形したシート状の封止充填剤用榭脂組成物を貼り付 ける場合について説明する。図 5〜図 7は、配線回路基板上にシート状封止充填剤 用榭脂組成物を貼り付けて半導体チップ及び配線回路基板を接合するフリップチッ プ実装方法のプロセスを説明する概略断面図である。 [0038] Next, the resin composition for a sealing filler in the form of a sheet having a desired thickness and shape according to the distance between the semiconductor chip 10 and the film-like substrate 1, the size of the semiconductor chip, and the like. Paste A description will be given of a case where 5 to 7 are schematic cross-sectional views illustrating a process of a flip chip mounting method in which a resin composition for a sheet-like sealing filler is bonded onto a printed circuit board to bond the semiconductor chip and the printed circuit board. .

[0039] まず、図 5に示すように、フィルム状基材 1における半導体チップの実装位置 5を覆 つて、シート状封止充填剤用榭脂組成物 6Aを貼り付ける。貼り付け法としては、熱圧 着が挙げられ、任意の形状の封止充填剤用榭脂組成物シートを作製し、半導体チッ プ、又は配線回路基板に加温しながら熱圧着することで封止充填剤用榭脂組成物 層を形成することができる。加熱温度としては、 50°C〜160°Cが好ましぐ 80°C〜13 0°Cがより好ましい。なお、図 5では、シート状封止充填剤用榭脂組成物 6Aが直接ソ ルダーレジスト 4に接している力 図 5では一例を図示したもので、図示の例に限らず 種々の態様を含む。 First, as shown in FIG. 5, the resin composition 6A for sheet-like sealing filler is pasted so as to cover the mounting position 5 of the semiconductor chip on the film-like substrate 1. Examples of the pasting method include hot pressing. A resin composition sheet for a sealing filler having an arbitrary shape is prepared and sealed by thermocompression bonding to a semiconductor chip or a printed circuit board while heating. A resin composition layer for a stop filler can be formed. The heating temperature is preferably 50 ° C to 160 ° C, more preferably 80 ° C to 130 ° C. FIG. 5 shows the force with which the resin-like composition 6A for sheet-like sealing filler is in direct contact with the solder resist 4. FIG. 5 shows an example, and it includes various embodiments without being limited to the illustrated example. .

[0040] 次に、図 6に示すように、バンプ 12が形成されている半導体チップ 10の下面を金属 めっき 3が形成されているフィルム状基材 1の上面に対向させ、所定温度で加熱しな 力 これらの半導体チップ 10とフィルム状基材 1とを押圧装置 15によって押圧する。 この時、超音波接合を行っても良い点は、図 3の場合と同様である。  Next, as shown in FIG. 6, the lower surface of the semiconductor chip 10 on which the bumps 12 are formed is opposed to the upper surface of the film-like substrate 1 on which the metal plating 3 is formed, and heated at a predetermined temperature. Force The semiconductor chip 10 and the film-like substrate 1 are pressed by the pressing device 15. At this time, ultrasonic bonding may be performed as in the case of FIG.

[0041] 以上のようにして、図 7に示すように、半導体チップ 10のバンプ 12とフィルム状基材 1の金属めつき 3とが接合され、かつバンプ 12と金属めつき 3との接合部の近傍をシ 一ト状封止充填剤用榭脂組成物 6Aで封止されたフリップチップ実装品 20Aを製造 することができる。  As described above, as shown in FIG. 7, the bump 12 of the semiconductor chip 10 and the metal plating 3 of the film-like substrate 1 are bonded, and the bonding portion of the bump 12 and the metal plating 3 is joined. A flip-chip mounted product 20A can be manufactured in which the vicinity is sealed with a resin composition 6A for sheet-like sealing filler.

[0042] 本発明によるフリップチップ実装方法においては、本発明の封止充填剤用榭脂組 成物に使用する熱可塑性榭脂が安定性に優れるため、半導体チップ又は配線回路 基板にあらかじめ封止充填剤用榭脂組成物を塗布、滴下、貼り付けした後、半導体 チップと配線回路基板との加熱接合までの放置時間に制限はない。また、本発明の 封止充填剤用榭脂組成物を用いた場合には、榭脂組成物封止充填剤を塗布、滴下 又は貼り付けた後の接合工程との放置時間の制約がなくなる。また、一般的な熱硬 化性榭脂に必要な接合後のアフターキュア一が必要ないため、工程を短縮すること ができる。  In the flip chip mounting method according to the present invention, since the thermoplastic resin used in the resin composition for sealing filler of the present invention is excellent in stability, it is sealed in advance on a semiconductor chip or a printed circuit board. There is no limitation on the standing time until the semiconductor chip and the printed circuit board are heated and bonded after the resin composition for filler is applied, dropped, and pasted. Further, when the resin composition for sealing filler of the present invention is used, there is no restriction on the standing time with the joining step after the resin composition sealing filler is applied, dropped or pasted. In addition, the post-joining after-curing necessary for general thermosetting resin is not necessary, so that the process can be shortened.

実施例 [0043] 以下に、本発明を実施例に基づいてより具体的に説明する。ただし、本発明は実 施例により何ら限定されるものではない。 Example [0043] Hereinafter, the present invention will be described more specifically based on examples. However, the present invention is not limited to the examples.

〔ポリオレフイン系熱可塑性榭脂の調製〕  (Preparation of polyolefin-based thermoplastic resin)

非結晶性ポリプロピレン榭脂(商品名:レタスタック 2780、ハンツマン社製) 56重量 部と、非結晶性ポリプロピレン榭脂(商品名:ベストプラスト 792、デグサ社製) 25重量 部、及び結晶性ポリプロピレン榭脂(商品名: S13B、三井住友ポリオレフイン社製) 1 56 parts by weight of non-crystalline polypropylene resin (trade name: Letterstack 2780, manufactured by Huntsman), 25 parts by weight of non-crystalline polypropylene resin (trade name: Bestplast 792, manufactured by Degussa), and crystalline polypropylene resin Fat (trade name: S13B, manufactured by Sumitomo Mitsui Polyolefin) 1

9重量部を 180°Cで溶融混合し、ポリプロピレン榭脂を得た。 9 parts by weight was melt-mixed at 180 ° C. to obtain a polypropylene resin.

[0044] 実施例 1 [0044] Example 1

上記ポリプロピレン榭脂 80重量%と、テルペン フエノール榭脂(商品名: YSポリス ター T160、ヤスハラケミカル社製) 20重量%に、酸化防止剤(商品名:ィルガノックス ΗΡ2251、チバ 'スぺシャリティ'ケミカルズ社製)を全榭脂の総量に対して 2重量% 配合した封止充填剤用榭脂組成物を 200°Cで溶融させ、各評価用の試験片を作製 した。  80% by weight of the above polypropylene resin, 20% by weight of terpene phenol resin (trade name: YS Polystar T160, manufactured by Yasuhara Chemical Co., Ltd.) ) Was melted at 200 ° C. to prepare test pieces for each evaluation.

[0045] 実施例 2 [0045] Example 2

上記ポリプロピレン榭脂 60重量%と、テルペン フエノール榭脂(商品名: YSポリス ター T160、ヤスハラケミカル社製) 40重量%に、酸化防止剤(商品名:ィルガノックス HP2251:チバ 'スぺシャリティ'ケミカルズ社製)を全榭脂の総量に対して 2重量%配 合した封止充填剤用榭脂組成物を 200°Cで溶融させ、各評価用の試験片を作製し た。  60% by weight of the above polypropylene resin, 40% by weight of terpene phenol resin (trade name: YS Polystar T160, manufactured by Yasuhara Chemical Co., Ltd.) and antioxidant (trade name: Irganox HP2251: manufactured by Ciba Specialty Chemicals ) Was melted at 200 ° C. to prepare test pieces for each evaluation.

[0046] 実施例 3  [0046] Example 3

上記ポリプロピレン榭脂 90重量%と、テルペン フエノール榭脂(商品名: YSポリス ター T160、ヤスハラケミカル社製) 10重量%に、酸化防止剤(商品名:ィルガノックス ΗΡ2251、チバ 'スぺシャリティ'ケミカルズ社製)を全榭脂の総量に対して 2重量% 配合した封止充填剤用榭脂組成物を 200°Cで溶融させ、各評価用の試験片を作製 した。  90% by weight of the above polypropylene resin, 10% by weight of terpene phenol resin (trade name: YS Polystar T160, manufactured by Yasuhara Chemical Co., Ltd.) ) Was melted at 200 ° C. to prepare test pieces for each evaluation.

[0047] 実施例 4 [0047] Example 4

上記ポリプロピレン榭脂 80重量%と、ジシクロペンタジェン系石油榭脂(商品名:ェ スコレッツ 5340、トーネックス社製) 20量量0 /0に、酸化防止剤(商品名:ィルガノック ス HP2251、チバ'スぺシャリティ'ケミカルズ社製)を全榭脂の総量に対して 2重量0 /0 配合した封止充填剤用榭脂組成物を 200°Cで溶融させ、各評価用の試験片を作製 した。 And the polypropylene榭脂80 wt%, dicyclopentadiene-based petroleum榭脂(trade name: E Sukorettsu 5340, manufactured by Tonex Co., Ltd.) 20 amount amount 0/0, antioxidant (trade name: Iruganokku Scan HP2251, Ciba a 'scan Bae Shariti' Chemicals Inc.) a sealing filler for榭脂composition 2 weight 0/0 was formulated based on the total amount of the whole榭脂melted at 200 ° C, for each evaluation A test piece was prepared.

[0048] 比較例 1 [0048] Comparative Example 1

ポリアミド系熱可塑性榭脂組成物(商品名:ハイボン XH055— 6、 日立化成ポリマ 一株式会社製)を 200°Cで溶融させ (粘度 3Pa · s)、評価用榭脂組成物とした。  A polyamide-based thermoplastic resin composition (trade name: Hybon XH055-6, manufactured by Hitachi Chemical Co., Ltd.) was melted at 200 ° C. (viscosity 3 Pa · s) to obtain an evaluation resin composition.

[0049] 比較例 2 [0049] Comparative Example 2

スチレン—ブタジエン系ゴム熱可塑性榭脂組成物(商品名:ハイボン 9610、 日立 化成ポリマー株式会社製)を 180°Cで溶融させ (粘度 3. 5Pa' s)、評価用榭脂組成 物とした。  A styrene-butadiene rubber thermoplastic resin composition (trade name: Hibon 9610, manufactured by Hitachi Chemical Polymer Co., Ltd.) was melted at 180 ° C. (viscosity: 3.5 Pa's) to obtain a resin composition for evaluation.

[0050] 比較例 3 [0050] Comparative Example 3

エポキシ系熱硬化性榭脂組成物封止充填剤 (商品名: RC281C、 日立化成工業 株式会社製)について各種試験用に適切な形状に塗布し、 150°Cで 2時間硬化し、 評価用試験片 (フィルム)を作製した。  An epoxy-based thermosetting resin composition sealing filler (trade name: RC281C, manufactured by Hitachi Chemical Co., Ltd.) is applied to various shapes for various tests, cured at 150 ° C for 2 hours, and an evaluation test A piece (film) was prepared.

[0051] 比較例 4 [0051] Comparative Example 4

上記ポリプロピレン榭脂に、酸化防止剤を全榭脂の総量に対して 2重量%配合した 封止充填剤用榭脂組成物を作製し、 180°Cで溶融させ、各評価用の試験片を作製 した。  A resin composition for sealing filler was prepared by blending the above-mentioned polypropylene resin with 2% by weight of an antioxidant with respect to the total amount of the total resin, melted at 180 ° C, and a test piece for each evaluation was prepared. Produced.

[0052] 〔評価用試験片 (フィルム)の作製〕  [0052] [Production of test piece for evaluation (film)]

実施例 1〜4及び比較例 1、 2及び 4の評価用榭脂組成物のフィルム (評価用試験 片)は、耐熱性テープでスぺーサーを設け、離型処理を施したガラス板をホットプレ ート上で後に記載の所定の温度に加熱し、ガラス板上で試料を溶融させ、ガラス棒を 用いて作製した。  Examples 1 to 4 and Comparative Example 1, 2 and 4 evaluation resin composition films (evaluation test pieces) were prepared by using a heat-resistant tape with a spacer and a glass plate subjected to a release treatment. A sample was heated on a glass plate to a predetermined temperature described later, the sample was melted on a glass plate, and a glass rod was used.

[0053] 実施例 1〜4、比較例 1〜4の評価用榭脂組成物及び評価用試験片(フィルム)を 用いた引張り弾性率、耐マイグレーション性、吸水率、イオン性不純物、密着性の測 定及び評価は、以下のように行った。結果を表 1及び図 9に示す。  [0053] Tensile elastic modulus, migration resistance, water absorption, ionic impurities, adhesion using the evaluation resin compositions and evaluation test pieces (films) of Examples 1 to 4 and Comparative Examples 1 to 4 Measurement and evaluation were performed as follows. The results are shown in Table 1 and FIG.

[0054] 〔引張り弾性率〕  [Tensile modulus]

評価用榭脂組成物の引張り弾性率は、榭脂を約 50 mのフィルム状にした後に幅 lcm、長さ 4cmの短冊状に切出した評価用試験片について、島津製作所製オートグ ラフ AGF— 5KNを用い、温度 23°C、チャック間 20mm、引張り速度 5mmZ分の条 件で測定した。 The tensile modulus of the evaluation resin composition is the width after the resin is formed into a film of about 50 m. A test piece for evaluation cut into a strip of lcm and 4cm in length was measured using an autograph AGF-5KN manufactured by Shimadzu Corporation under the conditions of a temperature of 23 ° C, a chuck distance of 20 mm, and a pulling speed of 5 mmZ.

[0055] 〔線膨張係数〕  [0055] [Linear expansion coefficient]

評価用榭脂組成物の線膨張係数は、榭脂組成物を厚さ約 50 mのフィルム状に した後に幅 4mm、長さ 20mmの短冊状に切出した評価用試験片について、リガク製 サーモプラス TMA8310を用い、チャック間距離 10mm、昇温速度 10°CZ分、加重 3gで測定した。  The linear expansion coefficient of the evaluation resin composition is the same as that of Rigaku's Thermoplus for the test specimens that were cut into strips 4 mm wide and 20 mm long after the resin composition was formed into a film with a thickness of about 50 m. Using TMA8310, the distance between chucks was 10 mm, the heating rate was 10 ° CZ, and the load was 3 g.

[0056] 〔吸水率〕  [0056] [Water absorption rate]

評価用榭脂組成物の吸水率は、 75mm角のガラス板に約 0. 5g (固形分)の榭脂 組成物を塗布し、 25°Cの水に 24時間浸漬し、重量の増加率を測定して次のように算 出した。すなわち、吸水率を、吸水率 = { (W— 0. 5) /0. 5} X 100 (%) (W: 25°C の水に 24時間浸漬した後の重量 (g) )から求めた。  The water absorption rate of the evaluation resin composition is as follows.Apply about 0.5 g (solid content) of the resin composition to a 75 mm square glass plate and immerse it in water at 25 ° C for 24 hours. Measured and calculated as follows. That is, the water absorption was determined from the water absorption = {(W—0.5) /0.5} X 100 (%) (W: weight after being immersed in water at 25 ° C for 24 hours (g)). .

[0057] 〔イオン性不純物〕 [0057] [Ionic impurities]

評価用榭脂組成物のイオン性不純物含有量は、よく洗浄した耐圧容器に榭脂組成 物約 2g、純水約 18gを入れ、 121°CZ100%RHの環境で 20時間抽出し、陰イオン クロマトグラフ(DX— 120 :ダイオネタス製、カラム AS12A)を用いて測定した。  The ionic impurity content of the evaluation resin composition was determined by placing approximately 2 g of the resin composition and approximately 18 g of pure water in a well-washed pressure-resistant container, extracting it in an environment of 121 ° CZ100% RH for 20 hours, and performing anion chromatography. Measurement was performed using a graph (DX-120: manufactured by Dionetas, column AS12A).

[0058] 〔耐マイグレーション性〕 [0058] [Migration resistance]

評価用榭脂組成物の耐マイグレーション性は、図 8に示す耐マイグレーション性評 価用基板を使用して評価した。すなわち、図 8に示すように、フレキシブル基板 (厚さ 25 μ mのポリイミド基材 1上に厚さ 10 mのすずめつき銅配線 2を形成した基板、配 線 30 μ mピッチ)にソルダレジスト 4 (商品名: SN— 9000、 日立化成工業株式会社 製)を塗布し、さらに配線表面に評価用榭脂組成物 6を塗布してサンプルを作製し、 長さ 30mm、幅 5mmに切り出して耐マイグレーション性評価用基板 30とした。なお、 図 8中、符号 31はソルダーレジスト 4を塗布して!/ヽな ツルダーレジスト未塗布部分を 示している。得られた耐マイグレーション性評価用基板 30について、イオンマイダレ ーシヨンテスター(商品名: MIG— 8600、 IMV社製)を用い、 110°C/85%RH/6 OVの条件で耐マイグレーション性を評価した。また、耐マイグレーション性の評価結 果を図 9に示す。 The migration resistance of the evaluation resin composition was evaluated using the migration resistance evaluation substrate shown in FIG. That is, as shown in FIG. 8, solder resist 4 is applied to a flexible substrate (a substrate in which a 10 m thick sprung copper wiring 2 is formed on a polyimide substrate 1 having a thickness of 25 μm and a wiring 30 μm pitch). (Product name: SN-9000, manufactured by Hitachi Chemical Co., Ltd.), and coating the evaluation resin composition 6 on the wiring surface to produce a sample. Cut out to a length of 30 mm and a width of 5 mm to prevent migration A substrate for property evaluation 30 was obtained. In FIG. 8, reference numeral 31 indicates a portion where the solder resist 4 is applied and / or the solder resist is not applied. With respect to the obtained substrate 30 for evaluating migration resistance, migration resistance was evaluated under the conditions of 110 ° C / 85% RH / 6 OV using an ion moulder tester (trade name: MIG-8600, manufactured by IMV). . In addition, evaluation results of migration resistance The results are shown in Fig. 9.

[0059] 〔密着性〕 [0059] [Adhesion]

評価用榭脂組成物の密着性評価は、耐マイグレーション性評価後のサンプルを 90 度に折り曲げた時の状態を目視により観察して次の基準により評価した。すなわち、 表 1中、丸印は基材力 榭脂組成物が剥離しない状態を表し、バッ印は基材力 榭 脂組成物が剥離する状態を表す。  The adhesion evaluation of the evaluation resin composition was evaluated according to the following criteria by visually observing the state when the sample after migration resistance evaluation was bent at 90 degrees. That is, in Table 1, a circle indicates a state in which the base material resin composition does not peel, and a back indicates a state in which the base material resin composition peels.

[0060] [表 1] [0060] [Table 1]

o CM o CM

00 X  00 X

CsJ O o  CsJ O o

o o  o o

CO X CO :, o 寸  CO X CO:, o size

O O

CSJ 〇 CO CSJ ○ CO

O  O

較較例例較例較比例施比実例施施比比実例実例実施例  Comparative Example Comparative Example Proportional Application Example Application Ratio Actual Example

4  Four

O o 00 CM  O o 00 CM

性率弾引張り) ( OMPっa 〇 csi csi 数線膨張係° ()/CPpm  (Elasticity tension) (OMPa 〇 csi csi Number line expansion coefficient () / CPpm

o o CSJ  o o CSJ

CO O 〇 o  CO O ○ o

o  o

水率吸()%  Water absorption ()%

o o CM  o o CM

CM 〇 o 寸.  CM 〇 o Dimension.

o 濃度塩素オイ ()ンppm o o CO LO  o Concentration chlorine oyster (ppm) ppm o o CO LO

σ> CO 〇 o  σ> CO ○ o

o o O CO O  o o O CO O

in 寸 〇 o L  in size ○ o L

o  o

鲡 実施例 1のポリオレフイン系の熱可塑性榭脂組成物は、比較例 3のエポキシ系熱硬 化性榭脂組成物に比べ低弾性を示し、線膨張係数を考慮に入れても、応力緩和に お!、て有利である。比較例 3のエポキシ系熱硬化性榭脂組成物及び比較例 4のポリ プロピレン榭脂は、折り曲げた際に容易に端部力も剥離した。実施例 1及び実施例 2 のポリオレフイン系熱可塑性榭脂組成物は、最も低い吸水率を示した。比較例 2は他 の榭脂組成物に比べイオン性不純物を多く含んで 、た。これら評価した物性は耐マ ィグレーシヨン性に影響を及ぼす因子として考えられる。 ポ リ The polyolefin-based thermoplastic resin composition of Example 1 exhibits lower elasticity than the epoxy-based thermosetting resin composition of Comparative Example 3, and can relieve stress even when the linear expansion coefficient is taken into consideration. It is advantageous! When the epoxy thermosetting resin composition of Comparative Example 3 and the polypropylene resin resin of Comparative Example 4 were bent, the end force was easily peeled off. The polyolefin thermoplastic thermoplastic compositions of Example 1 and Example 2 showed the lowest water absorption. Comparative Example 2 contained a larger amount of ionic impurities than other resin compositions. These evaluated physical properties can be considered as factors affecting the migration resistance.

[0062] また、図 9に示すように、実施例 1 (図中、曲線 Aで示す)は前述した特性に優れるた め、良好な耐マイグレーション性を示した。比較例 1 (図中、曲線 Bで示す)は吸水率 が高いため、比較例 2 (図中、曲線 Cで示す)はイオン性不純物が高いため、比較例 3 (図中、曲線 Dで示す)は弾性率が高く密着性が低 、ために耐マイグレーション性 が低下した。なお、比較例 1の測定結果による線図は、縦軸とほぼ同様な形状であつ た。 [0062] Further, as shown in FIG. 9, Example 1 (indicated by curve A in the figure) was excellent in the above-described characteristics, and thus showed good migration resistance. Since Comparative Example 1 (indicated by curve B in the figure) has a high water absorption rate, Comparative Example 2 (indicated by curve C in the figure) has a high ionic impurity, so Comparative Example 3 (indicated by curve D in the figure) ) Has a high modulus of elasticity and low adhesion, resulting in a decrease in migration resistance. Note that the diagram of the measurement result of Comparative Example 1 had almost the same shape as the vertical axis.

産業上の利用可能性  Industrial applicability

[0063] 以上のように、本発明にかかる封止充填剤用榭脂組成物は、フリップチップ実装方 法において、塗布、滴下後に適度な厚みを保持でき、加熱接合する際に適度な流れ 性を持って半導体チップと配線回路基板の間隙を隙間無く充填でき、接合時の加熱 による分解や発泡がなぐ適当な速度で融解、固化し、固化時に電気絶縁性が高ぐ 配線基板上の電極への腐食要因を有せず、固化時に部材間の応力緩和のため弹 性率が小さぐ常温 (25°C)での保管安定性に優れている。また、良好な耐マイダレ ーシヨン性に優れており、フリップチップ実装品として有用である。 [0063] As described above, the resin composition for sealing filler according to the present invention can maintain an appropriate thickness after application and dropping in the flip-chip mounting method, and has an appropriate flowability when heat-bonded. The gap between the semiconductor chip and the printed circuit board can be filled without gaps, and it melts and solidifies at an appropriate speed that eliminates decomposition and foaming due to heating during bonding, and the electrical insulation is high when solidified. It has excellent corrosion stability at room temperature (25 ° C), which has a low modulus of elasticity to relieve stress between members during solidification. In addition, it has excellent anti-middle resistance and is useful as a flip chip mounted product.

Claims

請求の範囲 The scope of the claims [1] 半導体チップと配線回路基板との間隙の接着封止充填剤に用いられる封止充填 剤用榭脂組成物であって、前記榭脂組成物がポリオレフイン系熱可塑性榭脂及び粘 着性付与剤を含有し、且つ、前記榭脂組成物中の塩素イオン濃度が 0を超えて ΙΟρ pm以下であることを特徴とする封止充填剤用榭脂組成物。  [1] A resin composition for a sealing filler used as an adhesive sealing filler in a gap between a semiconductor chip and a printed circuit board, wherein the resin composition is a polyolefin-based thermoplastic resin and an adhesive. A resin composition for sealing filler, comprising an imparting agent, and having a chlorine ion concentration in the resin composition of more than 0 and ≦ ρ pm. [2] 前記ポリオレフイン系熱可塑性榭脂の含有量が、前記封止充填剤用榭脂組成物の 全固形分に対して、 20〜99重量%であることを特徴とする請求項 1に記載の封止充 填剤用樹脂組成物。 [2] The content of the polyolefin-based thermoplastic resin is 20 to 99% by weight with respect to the total solid content of the resin composition for sealing filler. A sealing filler resin composition. [3] 前記ポリオレフイン系熱可塑性榭脂が、ポリエチレン、ポリプロピレン、及びポリオキ シメチレン力 なる群力も選択される少なくとも 1種であることを特徴とする請求項 1に 記載の封止充填剤用榭脂組成物。  [3] The resin composition for sealing filler according to claim 1, wherein the polyolefin-based thermoplastic resin is at least one selected from the group force of polyethylene, polypropylene, and polyoxymethylene force. object. [4] 前記粘着性付与剤が、ロジン系榭脂、テルペン系榭脂、テルペン一フエノール榭 脂、脂肪族系石油榭脂、芳香族系石油榭脂、及びジシクロペンタジェン系石油榭脂 からなる群から選択される榭脂であることを特徴とする請求項 1に記載の封止充填剤 用樹脂組成物。  [4] The tackifier is a rosin-based resin, a terpene-based resin, a terpene monophenol resin, an aliphatic petroleum resin, an aromatic petroleum resin, or a dicyclopentagen-based petroleum resin. 2. The resin composition for sealing filler according to claim 1, wherein the resin composition is a resin selected from the group consisting of: [5] 前記封止充填剤用榭脂組成物の吸水率が、 2. 5重量%以下であることを特徴とす る請求項 1に記載の封止充填剤用榭脂組成物。  [5] The resin composition for sealing filler according to claim 1, wherein the water absorption of the resin composition for sealing filler is 2.5% by weight or less. [6] 前記封止充填剤用榭脂組成物の弾性率が、 1, OOOMPa以下であることを特徴と する請求項 1に記載の封止充填剤用榭脂組成物。  6. The resin composition for sealing filler according to claim 1, wherein the elastic modulus of the resin composition for sealing filler is 1, OOOMPa or less. [7] 半導体チップ及び配線回路基板の少なくとも一方の対向面に、請求項 1から請求 項 6のうち、いずれか 1項に記載の封止充填剤用榭脂組成物を予め塗布又は貼り付 けした後、前記半導体チップのバンプと前記配線回路基板の電極とを加熱圧着する ことにより前記半導体チップ及び配線回路基板を接合し、同時に前記半導体チップ 及び配線回路基板の間隙を前記封止充填剤用榭脂組成物により封止することを特 徴とするフリップチップ実装方法。  [7] The resin composition for sealing filler according to any one of claims 1 to 6 is preliminarily applied or pasted to at least one facing surface of the semiconductor chip and the printed circuit board. Then, the bumps of the semiconductor chip and the electrodes of the wired circuit board are bonded by thermocompression bonding, and the gap between the semiconductor chip and the wired circuit board is used for the sealing filler at the same time. A flip chip mounting method characterized by sealing with a resin composition. [8] 半導体チップと配線回路基板との間隙に、請求項 1から請求項 6のうち、いずれか 1 項に記載の封止充填剤用榭脂組成物が充填されていることを特徴とするフリップチッ プ実装品。  [8] The gap between the semiconductor chip and the printed circuit board is filled with the resin composition for a sealing filler according to any one of claims 1 to 6. Flip chip mounted product.
PCT/JP2006/318192 2005-09-15 2006-09-13 Resin composition for sealing filler, flip chip mounting method using same, and flip chip mounted article Ceased WO2007032406A1 (en)

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JP2009256612A (en) * 2008-03-26 2009-11-05 Hitachi Chem Co Ltd Adhesive for semiconductor sealing, filmy adhesive for semiconductor sealing, semiconductor device, and its manufacturing method
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US9024455B2 (en) 2010-05-26 2015-05-05 Hitachi Chemical Company, Ltd. Semiconductor encapsulation adhesive composition, semiconductor encapsulation film-like adhesive, method for producing semiconductor device and semiconductor device
CN105390458A (en) * 2011-12-21 2016-03-09 联发科技股份有限公司 Semiconductor package

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090194871A1 (en) 2007-12-27 2009-08-06 Utac - United Test And Assembly Test Center, Ltd. Semiconductor package and method of attaching semiconductor dies to substrates
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0952941A (en) * 1995-08-14 1997-02-25 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JP2000297200A (en) * 1999-04-14 2000-10-24 Toray Ind Inc Resin composition for semiconductor sealing, and semiconductor device
JP2001192438A (en) * 2000-01-06 2001-07-17 Sumitomo Chem Co Ltd Epoxy resin composition
JP2003128881A (en) * 2001-10-18 2003-05-08 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
JP2003277580A (en) * 2002-03-25 2003-10-02 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4026787B2 (en) * 1998-03-16 2007-12-26 株式会社リコー Thin battery
JP2004067796A (en) * 2002-08-05 2004-03-04 Ube Ind Ltd Hot melt adhesive composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0952941A (en) * 1995-08-14 1997-02-25 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JP2000297200A (en) * 1999-04-14 2000-10-24 Toray Ind Inc Resin composition for semiconductor sealing, and semiconductor device
JP2001192438A (en) * 2000-01-06 2001-07-17 Sumitomo Chem Co Ltd Epoxy resin composition
JP2003128881A (en) * 2001-10-18 2003-05-08 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
JP2003277580A (en) * 2002-03-25 2003-10-02 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009049115A (en) * 2007-08-17 2009-03-05 Seiko Epson Corp Semiconductor device and manufacturing method thereof
JP2009124126A (en) * 2007-10-22 2009-06-04 Hitachi Chem Co Ltd Semiconductor sealing adhesive composition, semiconductor sealing film adhesive, semiconductor device manufacturing method, and semiconductor device
US9129898B2 (en) 2007-10-22 2015-09-08 Hitachi Chemical Company, Ltd. Semiconductor encapsulation adhesive composition, semiconductor encapsulation film-like adhesive, method for producing semiconductor device and semiconductor device
JP2009256612A (en) * 2008-03-26 2009-11-05 Hitachi Chem Co Ltd Adhesive for semiconductor sealing, filmy adhesive for semiconductor sealing, semiconductor device, and its manufacturing method
JP2010206142A (en) * 2009-03-06 2010-09-16 Fujitsu Ltd Electronic component and method of manufacturing the same
US9024455B2 (en) 2010-05-26 2015-05-05 Hitachi Chemical Company, Ltd. Semiconductor encapsulation adhesive composition, semiconductor encapsulation film-like adhesive, method for producing semiconductor device and semiconductor device
CN105390458A (en) * 2011-12-21 2016-03-09 联发科技股份有限公司 Semiconductor package

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JPWO2007032406A1 (en) 2009-03-19

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