[go: up one dir, main page]

WO2007032151A1 - Composition de pâte d’aluminium et élément de cellule solaire l'utilisant - Google Patents

Composition de pâte d’aluminium et élément de cellule solaire l'utilisant Download PDF

Info

Publication number
WO2007032151A1
WO2007032151A1 PCT/JP2006/314724 JP2006314724W WO2007032151A1 WO 2007032151 A1 WO2007032151 A1 WO 2007032151A1 JP 2006314724 W JP2006314724 W JP 2006314724W WO 2007032151 A1 WO2007032151 A1 WO 2007032151A1
Authority
WO
WIPO (PCT)
Prior art keywords
aluminum
paste composition
oxide
glass frit
aluminum paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/314724
Other languages
English (en)
Japanese (ja)
Inventor
Gaochao Lai
Takashi Watsuji
Haruzo Katoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Aluminum KK
Original Assignee
Toyo Aluminum KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Aluminum KK filed Critical Toyo Aluminum KK
Publication of WO2007032151A1 publication Critical patent/WO2007032151A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention generally relates to a paste composition and a solar cell element using the same.
  • an aluminum paste composition containing aluminum powder which is used when forming an electrode on a silicon semiconductor substrate constituting a crystalline silicon solar cell, and the aluminum paste composition. It relates to a solar cell element.
  • FIG. 1 is a diagram schematically showing a general cross-sectional structure of a solar cell element.
  • the solar cell element is configured using a p-type silicon semiconductor substrate 1 having a thickness of 220 to 300 / ⁇ ⁇ .
  • a ⁇ -type impurity layer 2 having a thickness of 0.3 to 0.6 / zm, and an antireflection film 3 and a grid electrode 4 are formed thereon.
  • An aluminum electrode layer 5 is formed on the back side of the ⁇ -type silicon semiconductor substrate 1.
  • the aluminum electrode layer 5 is formed by applying an aluminum powder, glass frit, and an aluminum paste composition that also has an organic vehicle force by screen printing or the like, drying it, and firing it at a temperature of 660 ° C (melting point of aluminum) or higher for a short time. It is formed by.
  • the Al—Si alloy layer 6 is formed between the aluminum electrode layer 5 and the p-type silicon semiconductor substrate 1 by diffusing into the aluminum-powered silicon semiconductor substrate 1 at the same time,
  • a P + layer 7 is formed as an impurity layer by diffusion of aluminum atoms. Due to the presence of the p + layer 7, a back surface field (BSF) effect that prevents recombination of electrons and improves the collection efficiency of generated carriers can be obtained.
  • BSF back surface field
  • the silicon semiconductor substrate is thinned, the silicon semiconductor substrate is formed so that the back surface side on which the back electrode layer is formed becomes concave after firing of the aluminum paste composition due to the difference in thermal expansion coefficient between silicon and aluminum.
  • the substrate deforms and warps.
  • Patent Document 2 discloses that an aluminum powder, a glass frit, and an organic substance are used as a conductive paste capable of suppressing warpage of a Si wafer.
  • the organic vehicle contains particles that are hardly soluble or insoluble, and the particles are at least one of organic compound particles and carbon particles.
  • Patent Document 4 JP-A-2005-191107 discloses a high-performance back electrode in which formation of aluminum balls and protrusions and swelling of the electrode are suppressed in the back electrode.
  • a method of manufacturing a solar cell element having high productivity with reduced warpage of a conductive substrate is disclosed, and an average particle size D force 1 ⁇ 2 to cumulative particle size distribution based on volume is used as an aluminum paste used in the manufacturing method. 20 m and less than half the average particle size D
  • Patent Document 5 allows an A1-Si eutectic structure layer to be uniformly formed at the interface between a back electrode and a p-type Si semiconductor substrate without any gaps.
  • a conductive paste capable of improving the conversion efficiency of the solar battery it contains A1 powder, glass frit and bikunole, and the glass frit contains BiO: 30 to 70 mol%, BO: 20 ⁇
  • Patent Document 1 Japanese Unexamined Patent Publication No. 2000-90734
  • Patent Document 2 JP 2004-134775 A
  • Patent Document 3 Japanese Patent Laid-Open No. 5-129640
  • Patent Document 4 JP-A-2005-191107
  • Patent Document 5 Japanese Unexamined Patent Publication No. 2000-90733
  • an object of the present invention is to solve the above-described problem, and an aluminum paste composition capable of suppressing the generation of a prestar or aluminum ball in the back electrode layer during firing.
  • An object of the present invention is to provide a solar cell element provided with an electrode formed using the composition.
  • the present inventors have found that the above object can be achieved by using an aluminum paste composition having a specific composition. It was. Based on this finding, the aluminum paste composition according to the present invention has the following characteristics.
  • An aluminum paste composition according to the present invention is a paste composition for forming an electrode on a silicon semiconductor substrate, and includes aluminum powder, an organic vehicle, and glass frit. Contains alkaline earth metal oxides.
  • the alkaline earth metal oxide is a group that also includes magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), and barium oxide (BaO). It is at least one selected from more.
  • the glass frit includes boron oxide (B 2 O 3), zinc oxide (ZnO), bismuth oxide (Bi 2 O 3), silicon oxide (Si
  • Al 2 O 3 aluminum oxide
  • SiO oxidized soot
  • ZrO 2 zirconium oxide
  • the content of the alkaline earth metal oxide is 5% by mass or more and 75% by mass or less in the glass frit.
  • the glass frit content is preferably 0.1% by mass or more and 8% by mass or less in the paste composition.
  • a solar cell element according to the present invention includes an electrode formed by applying an aluminum paste composition having any of the above-described characteristics onto a silicon semiconductor substrate and then firing the composition.
  • FIG. 1 is a diagram schematically showing a general cross-sectional structure of a solar cell element to which the present invention is applied as one embodiment.
  • the aluminum paste composition of the present invention is characterized in that it contains glass frit in addition to aluminum powder and an organic vehicle, and the glass frit contains an alkaline earth metal oxide. Glass frit is said to have an effect of assisting the reaction between aluminum and silicon and sintering of the aluminum powder itself. However, when glass frit with a conventional composition is used, the amount of Al—Si alloy produced locally increases due to the reaction between aluminum and silicon, and the generation of blisters and aluminum balls increased.
  • the glass frit included in the aluminum paste used to form the back electrode of solar cells is PbO— B as the main component.
  • a conventional glass frit mainly composed of PbO and BiO is made of an aluminum paste during firing.
  • the reaction between aluminum and silicon can be controlled so as not to proceed excessively by including glass frit containing gallium earth metal oxide in the aluminum paste. Thereby, it is thought that generation
  • MgO, CaO, SrO or BaO can be used as the argali earth metal oxide.
  • the glass frit of the present invention contains at least one kind of argali earth metal oxide as an essential component, but as an oxide for constituting a glass having predetermined characteristics, BO, ZnO
  • the content of the argali earth metal oxide in the glass frit of the present invention is not particularly limited, but is preferably 5% by mass or more and 75% by mass or less, more preferably 10% by mass or more. 65% by mass or less. If the content of the argali earth metal acid is less than 5% by mass, the prescribed blister or aluminum ball suppression effect may not be obtained. In addition, if the content of argali earth metal oxide exceeds 75% by mass, There is a risk of exceeding the enclosure, making it difficult to produce glass.
  • the glass frit of the present invention can be used by further containing other oxides and compounds as trace components, if necessary. The content of oxides and compounds as trace components is generally 5% by mass or less.
  • the method for producing the glass frit of the present invention is not particularly limited, and various raw materials are prepared, melted, made glassy, and so on so as to have a predetermined glass frit composition by a known glass manufacturing method.
  • the predetermined glass frit is obtained by pulverization, drying and classification.
  • an aluminum paste composition containing a glass frit containing an alkaline earth metal oxide of the present invention is used, blisters or aluminum balls are formed on the aluminum electrode layer formed on the back surface of the silicon semiconductor substrate. Generation
  • production can be suppressed.
  • the content of the glass frit in the aluminum paste composition of the present invention is not particularly limited, but is preferably 8% by mass or less. If the glass frit content exceeds 8% by mass, glass prayers occur, the resistance of the aluminum electrode layer increases, and the power generation efficiency of the solar cell may be reduced.
  • the lower limit of the glass frit content is not particularly limited. 1S is usually 0.1% by mass or more. If the lower limit of the glass frit content is less than 0.1% by mass, the reaction between aluminum and silicon becomes insufficient, and the BSF effect may not be sufficiently obtained.
  • the average particle size of the glass frit particles contained in the aluminum paste composition of the present invention is not particularly limited, but is preferably 20 ⁇ m or less.
  • the content of the aluminum powder included in the aluminum paste composition of the present invention is preferably 60% by mass or more and 80% by mass or less. If the content of the aluminum powder is less than 60% by mass, the resistance of the aluminum electrode layer after firing becomes high, which may cause a decrease in the energy conversion efficiency of the solar cell. If the aluminum powder content exceeds 80% by mass, the applicability of the aluminum paste in screen printing and the like will be reduced.
  • a wide range of aluminum powder having an average particle diameter of 1 to 20 ⁇ m can be used.
  • it is preferably 2 to 15 ⁇ m, more preferably Use 3 to 10 / ⁇ ⁇ . If the average particle diameter is less than 1, the specific surface area of the aluminum powder becomes large, which is not preferable.
  • the aluminum paste composition is formed by adding aluminum powder. In this case, an appropriate viscosity cannot be obtained.
  • the aluminum powder included in the aluminum paste composition of the present invention is not particularly limited to the shape of the powder and the method for producing the powder.
  • the components of the organic vehicle included in the aluminum paste composition of the present invention are not particularly limited, but resins such as ethyl cellulose and alkyd, and solvents such as glycol ethers and terbinols can be used.
  • the content of the organic vehicle is preferably 20% by mass or more and 40% by mass or less. If the content of the organic vehicle is less than 20 mass 0/0, reduced printing of the aluminum paste, it is impossible to form a satisfactory aluminum electrode layer. On the other hand, when the content of the organic vehicle exceeds 40% by mass, there arises a problem that the baking of aluminum is hindered by the presence of excess organic vehicle as well as the viscosity of the aluminum paste being increased.
  • the aluminum paste composition of the present invention can be used by containing various additives such as a dispersant, a plasticizer, an anti-settling agent, and a thixotropic agent that adjust the properties of the aluminum paste as necessary.
  • the composition of the additive is not particularly limited, but the content is preferably 10% by mass or less.
  • Aluminum paste compositions to which glass frit containing various alkaline earth metal oxides were added at the ratio shown in 1 were prepared.
  • Aluminum paste compositions (Examples 1 to 7) were prepared by mixing with a known mixer. Further, in the same manner as described above, aluminum paste compositions (Comparative Examples 1 to 5) containing conventional glass frit without alkaline earth metal oxides were prepared as shown in Table 1. .
  • the aluminum powder ensures the reactivity with the silicon semiconductor substrate, the coating property, and the From the viewpoint of the uniformity of the coating film, a powder composed of particles having an average particle diameter of 2 to 20 / ⁇ ⁇ or a shape close to a sphere was used. Glass frit having an average particle diameter of 1 to 12 m was used.
  • the various aluminum paste compositions described above have a thickness of 220 ⁇ m and a size of 155 mm.
  • the coating was printed on a 155 mm p-type silicon semiconductor substrate using a 165 mesh screen printing plate and dried.
  • the coating amount was set to 1.5 ⁇ 0.lgZ before drying.
  • the p-type silicon semiconductor substrate on which the aluminum paste was printed was dried and then fired in an air atmosphere in an infrared continuous firing furnace.
  • the temperature of the firing zone of the firing furnace was set to 760 to 780 ° C, and the residence time (firing time) of the substrate was set to 8 to 12 seconds. After firing, cooling was performed to obtain a structure in which an aluminum electrode layer 5 and an Al—Si alloy layer 6 were formed on a p-type silicon semiconductor substrate 1 as shown in FIG.
  • the amount of blisters and aluminum balls generated per measured surface area 150 X 150mm 2 of the aluminum electrode layer 5 was visually counted, and the total value is shown in Table 1. .
  • the target value of the amount of blister and aluminum balls is set to 5.
  • the p-type silicon semiconductor substrate on which the back electrode layer was formed was immersed in an aqueous hydrochloric acid solution to dissolve and remove the aluminum electrode layer 5 and the Al-Si alloy layer 6, and the p + layer 7 was formed.
  • the surface resistance of the type silicon semiconductor substrate was measured with the above surface resistance measuring instrument.
  • the target surface resistance value is 18 m ⁇ or less for the back electrode 8 and 16 ⁇ or less for the ⁇ + layer 7.
  • Table 1 shows the surface resistance of the back electrode 8 and the surface resistance of the p + layer 7 measured as described above.
  • the alkaline earth metal of the present invention was compared with the aluminum paste composition (Comparative Examples 1 to 5) supplemented with a conventional glass frit containing no alkaline earth metal oxides.
  • the aluminum paste composition (Examples 1 to 7) using a glass frit containing a metal oxide, the electrode function of the aluminum electrode layer and the BSF effect are not lowered, and the blister in the aluminum electrode layer It can be seen that generation of aluminum balls and aluminum can be suppressed.
  • an aluminum paste composition containing glass frit containing an alkaline earth metal oxide is used to form on the back surface of the silicon semiconductor substrate.
  • production of a blister or an aluminum ball can be suppressed in an aluminum electrode layer, and the manufacturing yield of a solar cell element can be improved.

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)

Abstract

La présente invention concerne une composition de pâte d’aluminium qui est capable d’inhiber l’apparition de cloque et de nervures d’aluminium sur une couche d’électrode arrière pendant la cuisson ; et un élément de cellule solaire comportant une électrode fabriquée au moyen de cette composition. Elle concerne spécifiquement une composition de pâte d’aluminium servant à constituer des électrodes (8) sur un substrat de silicium semi-conducteur (1), comprenant de l’aluminium en poudre, un liant organique et une fritte de verre, la fritte de verre contenant un oxyde de métal alcalino-terreux. Elle concerne en outre un élément de cellule solaire comportant l’électrode (8) constituée en appliquant la composition de pâte caractérisée ci-dessus sur un substrat de silicium semi-conducteur (1) et en la cuisant.
PCT/JP2006/314724 2005-09-13 2006-07-26 Composition de pâte d’aluminium et élément de cellule solaire l'utilisant Ceased WO2007032151A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-265805 2005-09-13
JP2005265805A JP2007081059A (ja) 2005-09-13 2005-09-13 アルミニウムペースト組成物およびそれを用いた太陽電池素子

Publications (1)

Publication Number Publication Date
WO2007032151A1 true WO2007032151A1 (fr) 2007-03-22

Family

ID=37864751

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/314724 Ceased WO2007032151A1 (fr) 2005-09-13 2006-07-26 Composition de pâte d’aluminium et élément de cellule solaire l'utilisant

Country Status (3)

Country Link
JP (1) JP2007081059A (fr)
TW (1) TW200713334A (fr)
WO (1) WO2007032151A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010016186A1 (fr) * 2008-08-07 2010-02-11 京都エレックス株式会社 Pâte conductrice pour la formation d'une électrode d'élément de cellule solaire, élément de cellule solaire, et procédé de fabrication dudit élément de cellule solaire
US7842596B2 (en) * 2007-05-07 2010-11-30 Georgia Tech Research Corporation Method for formation of high quality back contact with screen-printed local back surface field
US8778231B2 (en) 2010-12-16 2014-07-15 E I Du Pont De Nemours And Company Aluminum pastes comprising boron nitride and their use in manufacturing solar cells

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010527A (ja) * 2006-06-28 2008-01-17 Sharp Corp 太陽電池電極用導電性ペースト
JP5160321B2 (ja) * 2008-06-27 2013-03-13 株式会社ノリタケカンパニーリミテド シリコン系太陽電池の製造方法および該製造方法に用いるアルミニウムペースト
DE102012221334B4 (de) 2011-12-22 2018-10-25 Schott Ag Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100306A (ja) * 1981-12-09 1983-06-15 松下電器産業株式会社 導電性ペ−スト
JPS63276804A (ja) * 1987-05-06 1988-11-15 Hitachi Ltd 導電ペ−スト組成物
JPH04293214A (ja) * 1991-03-20 1992-10-16 Mitsubishi Materials Corp チップ型電子部品用導電性ペースト
JPH05159621A (ja) * 1991-12-10 1993-06-25 Matsushita Electric Ind Co Ltd 導電性ペースト
JPH05298917A (ja) * 1992-04-20 1993-11-12 Okuno Chem Ind Co Ltd 導電性アルミニウムペースト用組成物
JPH08273434A (ja) * 1995-04-03 1996-10-18 Okuno Chem Ind Co Ltd 導電性アルミニウム合金ペースト組成物
JP2003203521A (ja) * 2001-12-28 2003-07-18 Namics Corp 導電ペースト及びその使用
JP2004152827A (ja) * 2002-10-29 2004-05-27 Kyocera Corp 太陽電池素子およびその製造方法
JP2005203622A (ja) * 2004-01-16 2005-07-28 Kyocera Corp 光電変換装置、金属ペーストおよびそれを用いた光電変換装置の製造方法
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100306A (ja) * 1981-12-09 1983-06-15 松下電器産業株式会社 導電性ペ−スト
JPS63276804A (ja) * 1987-05-06 1988-11-15 Hitachi Ltd 導電ペ−スト組成物
JPH04293214A (ja) * 1991-03-20 1992-10-16 Mitsubishi Materials Corp チップ型電子部品用導電性ペースト
JPH05159621A (ja) * 1991-12-10 1993-06-25 Matsushita Electric Ind Co Ltd 導電性ペースト
JPH05298917A (ja) * 1992-04-20 1993-11-12 Okuno Chem Ind Co Ltd 導電性アルミニウムペースト用組成物
JPH08273434A (ja) * 1995-04-03 1996-10-18 Okuno Chem Ind Co Ltd 導電性アルミニウム合金ペースト組成物
JP2003203521A (ja) * 2001-12-28 2003-07-18 Namics Corp 導電ペースト及びその使用
JP2004152827A (ja) * 2002-10-29 2004-05-27 Kyocera Corp 太陽電池素子およびその製造方法
JP2005203622A (ja) * 2004-01-16 2005-07-28 Kyocera Corp 光電変換装置、金属ペーストおよびそれを用いた光電変換装置の製造方法
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842596B2 (en) * 2007-05-07 2010-11-30 Georgia Tech Research Corporation Method for formation of high quality back contact with screen-printed local back surface field
WO2010016186A1 (fr) * 2008-08-07 2010-02-11 京都エレックス株式会社 Pâte conductrice pour la formation d'une électrode d'élément de cellule solaire, élément de cellule solaire, et procédé de fabrication dudit élément de cellule solaire
JP2010283340A (ja) * 2008-08-07 2010-12-16 Kyoto Elex Kk 太陽電池素子の電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法
JP4754655B2 (ja) * 2008-08-07 2011-08-24 京都エレックス株式会社 太陽電池素子の電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法
US8852465B2 (en) 2008-08-07 2014-10-07 Kyoto Elex Co., Ltd. Electro-conductive paste for forming an electrode of a solar cell device, a solar cell device and method for producing the solar cell device
US9461188B2 (en) 2008-08-07 2016-10-04 Kyoto Elex Co., Ltd. Electro-conductive paste for forming an electrode of a solar cell device, a solar cell device and method for producing the solar cell device
US8778231B2 (en) 2010-12-16 2014-07-15 E I Du Pont De Nemours And Company Aluminum pastes comprising boron nitride and their use in manufacturing solar cells

Also Published As

Publication number Publication date
TW200713334A (en) 2007-04-01
JP2007081059A (ja) 2007-03-29

Similar Documents

Publication Publication Date Title
JP3910072B2 (ja) ペースト組成物およびそれを用いた太陽電池
KR102524339B1 (ko) Perc형 태양전지용 알루미늄 페이스트 조성물
CN102473756A (zh) 糊组合物及使用其的太阳能电池元件
JP2015502028A (ja) ｐ型ドープト半導体基板のアルミニウムｐ型ドープト表面領域の形成方法
TW200742098A (en) Aluminum - boron solar cell contacts
TW201443920A (zh) 太陽能電池元件表面電極用導電性糊及太陽能電池元件之製造方法
US20130056060A1 (en) Process for the production of lfc-perc silicon solar cells
JP2012044142A (ja) アルミニウムペースト及びこれを利用した太陽電池
JP2010087501A (ja) 導電性組成物及びそれを用いた太陽電池
TW201125153A (en) Process of forming an electrode on the front-side of a non-textured silicon wafer
JP4949263B2 (ja) ペースト組成物およびそれを用いた太陽電池素子
JPWO2018135430A1 (ja) 太陽電池用ペースト組成物
WO2013023181A1 (fr) Pâte d'argent présentant une capacité de cuisson par diffusion nulle ou médiocre et son utilisation pour la métallisation d'une cellule solaire
JP4907331B2 (ja) 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法
WO2007032151A1 (fr) Composition de pâte d’aluminium et élément de cellule solaire l'utilisant
WO2006103882A1 (fr) Composition de pate, electrode et dispositif de cellule solaire les comprenant
JP5160321B2 (ja) シリコン系太陽電池の製造方法および該製造方法に用いるアルミニウムペースト
KR20140074415A (ko) 태양전지 후면 전극의 제조 방법 및 이를 이용한 태양전지 소자
JP2013089481A (ja) ペースト組成物
JP5540811B2 (ja) 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
KR20150057457A (ko) 알루미늄 페이스트 조성물 및 이를 이용한 태양전지 소자
JP5132929B2 (ja) 光電変換素子用導電性ペースト、光電変換素子、および光電変換素子の作製方法
JP2011204759A (ja) 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池
CN103907207A (zh) 形成半导体基板的p型掺杂铝表面区域的方法
KR20150057453A (ko) 알루미늄 페이스트 조성물 및 이를 이용한 태양전지 소자

Legal Events

Date Code Title Description
DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06781636

Country of ref document: EP

Kind code of ref document: A1