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WO2007031929A1 - Procede d'elaboration d'une tranche de dels a couche d'extraction de lumiere - Google Patents

Procede d'elaboration d'une tranche de dels a couche d'extraction de lumiere Download PDF

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Publication number
WO2007031929A1
WO2007031929A1 PCT/IB2006/053204 IB2006053204W WO2007031929A1 WO 2007031929 A1 WO2007031929 A1 WO 2007031929A1 IB 2006053204 W IB2006053204 W IB 2006053204W WO 2007031929 A1 WO2007031929 A1 WO 2007031929A1
Authority
WO
WIPO (PCT)
Prior art keywords
sol
gel
layer
embossing
coating
Prior art date
Application number
PCT/IB2006/053204
Other languages
English (en)
Inventor
Hans Van Sprang
Marcus A. Verschuuren
Martinus P. J. Peeters
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2007031929A1 publication Critical patent/WO2007031929A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Definitions

  • the present invention relates to providing LEDs with an embossed or imprinted inorganic layer for enhanced extraction of light. More specifically, this layer is formed by soft-lithography of a sol-gel precursor.
  • LED's light-emitting diodes
  • DBR distributed Bragg reflectors
  • a method for providing an inorganic LED wafer with an optical structure adapted to enhance light extraction from said LED comprising providing a coating of a sol-gel precursor on said wafer, ensuring that the surface of said sol-gel coating is susceptible to embossing, embossing a structure in the sol-gel coating using soft-lithography, and curing the sol-gel layer, thereby forming said light extraction layer.
  • an inorganic light extraction layer can be applied by soft-lithography directly to the whole wafer from which the LEDs will be produced.
  • the wafer can be sapphire or any other suitable material. The fact that the layer is applied on a macroscopic scale on the entire LED wafer makes it industrially favorable (less expensive) than to provide the structures on each LED separately.
  • the invention is based on the understanding that sol-gel precursors, because of their properties before a final curing step, constitute a suitable base material for soft lithography, and that their optical properties make them suitable for use as optical components.
  • the soft lithography requires fewer processing steps and is thus faster and less expensive, both in terms of production cost as well as investment cost.
  • sol-gel precursor generally relates to a metal-alkoxide compound, also in combination with colloidal particles, in particular colloidal silica particles (e.g. Ludox).
  • a preferred metal-alkoxide is an organosilane compound, forming a hybrid sol-gel precursor.
  • a hybrid sol-gel precursor comprising an organosilane compound is understood to be a compound comprising silicon, which is bond to at least one non-hydro lysable organic group, and 2 or 3 hydroly sable organic groups.
  • the hybrid sol-gel precursor may comprise an organosilane compound from the group of alkyl-alkoxysilanes.
  • the silane can be mono-organically modified using for example methyl, ethyl or phenyl as organic modifier. Mono-organically modified is to be construed, as one of the four covalent bonds of the silicon is a Si-C bond. In this case, the remaining three bonds are Si-O bonds.
  • Examples of preferred sol-gel precursors comprise methyl-tri-methoxy-silane (MTMS), which is a mono-methyl-modified silane, and methyl-triethoxysilane (MTES).
  • MTMS methyl-tri-methoxy-silane
  • MTES methyl-triethoxysilane
  • MTMS results in a bonding material comprising a matrix having the basic structure CH 3 -Si-O 1 5 (i.e. a silsesquioxane).
  • the matrix has a relatively high elasticity due to the fact that the silicon atoms are only threefold cross-linked to each other.
  • Hybrid layers produced using sol-gel precursors such as MTMS and MTES are known to have excellent temperature stability up to at least 400 degrees C in air.
  • Other suitable precursor materials include T-resins, such as Silres 610 or Silres 603 from Wacker Chemie GmbH.
  • the precursor can further comprises an oxide including at least one element selected from the group consisting of Si, Al, Ga, Ti, Ta, Ge, P, B, Zr, Y, Sn , Pb, and Hf.
  • the oxide serves to increase the light extraction layer's index of refraction, which in turn enhances the light coupling capability of the layer.
  • Such particles can be used to introduce optical scattering in the layers, or allow thicker layers to be deposited. These particles can also be of fluorescent or phosphorescent nature, which allows for very special effects in terms of enhanced emission or angular distribution of the emission.
  • the embossing can be performed using wave printing, which makes it feasible to use soft lithography on a larger scale, in terms of area and thus production volume, by ensuring a good contact between a stamp and the sol-gel coating, as well as good release between the two.
  • the embossing can be performed using vacuum embossing.
  • the sol-gel precursor preferably contains a high boiling solvent, and the embossing can then be performed before the solvent has evaporated completely, so that the sol-gel precursor is still soft and deformable.
  • sol-gel layers as disclosed above only require curing at very limited temperatures (200-300 degrees Celsius), the sol-gel coating can be applied directly on top of an active stack (light emitting layer) on the LED wafer.
  • the active stack may or may not be deposited on a substrate.
  • the sol-gel coating is applied directly onto a substrate wafer.
  • the emitting layer can then be deposited on the other side of this wafer, before or after the sol-gel process, or be deposited on top of the embossed and cured light extraction layer.
  • the structure can be formed as a lens, e.g. a Fresnel lens.
  • a lens e.g. a Fresnel lens.
  • arrays of such structures can be made, and when the overall dimensions become of the order of the wavelength of the light special structures become available like moth-eye extraction layers or photo randomization layers.
  • the structure can also be formed as a photonic band-gap (PBG) structure.
  • PBG photonic band-gap
  • Such a structure consists of sub- wavelength patterned layers where the structure precludes light transmission in certain directions while enhancing it for other wavelengths or directions.
  • the sol-gel structure is filled with another material, and the sol-gel layer is then removed.
  • the material can be a LED related material (e.g. GaN) or any other material that can be applied in physical or chemical way.
  • the sol-gel structure is thus used as a kind of mould, for forming a structure of another material. This allows forming a patterned structure that can consist of a wide range of materials, without the need for traditional lithographic treatment. In other words, materials that normally must be treated with traditional techniques, such as optical lithography, can instead be structured using indirect soft lithography, as long as they can be applied to the sol-gel layer in a physical or chemical way.
  • Figures la-c are schematic side views of a LED provided with a light extraction layer according to different embodiments of the invention.
  • Figure 2 shows an embodiment of the method according to the invention.
  • Figure 3a shows the principle of wave printing.
  • Figure 3b shows the principle of vacuum embossing.
  • Figures 4a-c are SEM images showing three examples of structures suitable for realization according to the invention.
  • Figures la-c shows examples of how the light extraction layer according to the invention can be arranged on a LED 2.
  • the sol-gel layer 1 is provided on the opposite side of the substrate 3 on which the active layer 2 of the LED are deposited.
  • the sol-gel layer 1 is applied directly on the active layer 2.
  • the active layer 2 has been deposited on a substrate 3, in fig Ic the LED is a substrate free LED.
  • FIG. 2 shows an embodiment of the method according to the invention.
  • a thin coating 1 of sol-gel is applied onto the desired area.
  • the sol-gel can be applied with a suitable method, such as spin coating, spray coating or screen printing.
  • the area can be the active layer of a LED, or a substrate on which the active layer has been deposited, or on a substrate on which the active layer will be deposited.
  • the sol-gel layer 1 is then pre-dried in step S2, during which a gelation process sets in to create a network or matrix structure.
  • a gelation process sets in to create a network or matrix structure.
  • the sol-gel has been provided with a small amount (5-15%) of a high boiling solvent.
  • a controlled amount of high boiling solvent is left in the coating, and keeps the coating soft and deformable.
  • step S3 a structure is embossed in the sol-gel layer 1 using a soft lithography technique. Different ways to perform such lithography will be described below.
  • the sol-gel is cured in step S4, to leave a structured silicon layer, adapted to act as a light extraction layer of the LED.
  • the embossing can be performed using a wave printer 10 as schematically illustrated in Fig. 3 a.
  • the wave printer uses a patterned PDMS (poly-di-methyl-siloxane) rubber stamp 11 that, by means of air pressure provided through grooves 12, is forced in and of contact with the sol-gel layer 1.
  • the contact is executed with a wavelike motion, as illustrated in Fig. 3a, in order to reduce the amount of ambient gas trapped between the stamp 11 and the sol-gel layer 1 during the contacting step, as well as to reduce the forces involved when the stamp 11 is detached from the sol-gel layer.
  • the pressure underneath the stamp 11 is kept for some time to ensure that the pattern of the stamp 11 is replicated into the sol-gel layer 1.
  • the wave printing principle is described in WO03/099463.
  • Another way to perform the soft lithography is by vacuum embossing, shown in fig 3b.
  • the sol-gel is allowed to pre-dry and is then placed in a vacuum chamber together with the stamp 15. Pressure is decreased, and the stamp is released and allowed to abut the wet sol-gel layer 1. When pressure is again raised, sol-gel is pressed into the cavities of the stamp, and remaining air/solvent diffuses into the rubber.
  • the vacuum embossing technique requires a sol gel- lacquer, which is free from water and has a large percentage of organic solvents.
  • Fig. 4a shows micro lenses in a silica sol-gel. Such micro lenses can be used for enhanced extraction/collection of light from the inorganic LED.
  • Fig. 4b shows a two-dimensional structure for extraction of light (moth-eye structure), comprising nano bumps that reduce reflectivity and enhance out-coupling of light.
  • Fig. 4c shows a 2-dimensional PBG structure comprising a hexagonal grid of sol-gel needles. In this structure the two-dimensional PBG is similar to the construction shown in the sol-gel hexagonal pattern of needles and so this structure does not need extra lithography steps and etching procedures but can be applied in a sol-gel layer (which can also be TiO2 if higher index material is required) at the wafer level.
  • the above structures could be embossed in the sol-gel over the whole area of a led substrate wafer according to the above described method.
  • the structuring can be done when the active layers have already been deposited on the substrate, but can also been done before deposition of the active layers.

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  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

L'invention porte sur l'élaboration d'une tranche de DELs à couche minérale structurée d'extraction de lumière, comportant les étapes suivantes: dépôt d'un revêtement de sol-gel sur ladite tranche; vérification de la possibilité de création de reliefs dans ledit revêtement; création d'une structure en 3D dans le revêtement de sol-gel par lithographie molle; durcissement de la couche de sol-gel pour former ladite couche d'extraction de lumière. L'invention résulte de la compréhension du fait que les précurseurs de sol-gel, en raison de leurs propriétés avant le durcissement final, constituent un matériau de base adapté à la lithographie molle, et que leurs propriétés optiques permettent de les utiliser comme composants optiques. Comparée à la lithographie optique traditionnelle la lithographie molle demande moins d'étapes de traitement; elle est donc plus rapide, et moins coûteuse tant en de coûts de production, qu'en coûts en investissements.
PCT/IB2006/053204 2005-09-16 2006-09-11 Procede d'elaboration d'une tranche de dels a couche d'extraction de lumiere WO2007031929A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05108552 2005-09-16
EP05108552.0 2005-09-16

Publications (1)

Publication Number Publication Date
WO2007031929A1 true WO2007031929A1 (fr) 2007-03-22

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TW (1) TW200717872A (fr)
WO (1) WO2007031929A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2056368A1 (fr) * 2007-10-29 2009-05-06 LG Electronics Inc. Dispositif électroluminescent et son procédé de fabrication
WO2012038318A1 (fr) * 2010-09-20 2012-03-29 Osram Opto Semiconductors Gmbh Puce semi-conductrice optoélectronique, procédé de fabrication et utilisation dans un composant optoélectronique
DE102011117381A1 (de) * 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
WO2017054937A1 (fr) * 2015-09-29 2017-04-06 Philips Lighting Holding B.V. Source de lumière avec découplage de diffraction

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JPS63283174A (ja) * 1987-05-15 1988-11-21 Omron Tateisi Electronics Co 発光ダイオ−ド
US20030062530A1 (en) * 1998-12-24 2003-04-03 Kabushiki Kaisha Toshiba. Semiconductor light emitting device and its manufacturing method
EP1420462A1 (fr) * 2002-11-13 2004-05-19 Heptagon Oy Dispositif émetteur de lumière
EP1460738A2 (fr) * 2003-03-21 2004-09-22 Avalon Photonics AG Technique de réplication au niveau de platine pour des structures optomécaniques sur optoélectroniques
WO2005024962A2 (fr) * 2003-08-29 2005-03-17 Osram Opto Semiconductors Gmbh Puce de diode electroluminescente a mince couche et son procede de production
WO2005048361A2 (fr) * 2003-11-12 2005-05-26 Matsushita Electric Works, Ltd. Procede de production d'un dispositif electroluminescent
US20050141240A1 (en) * 2003-09-30 2005-06-30 Masayuki Hata Light emitting device and fabrication method thereof

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Publication number Priority date Publication date Assignee Title
US4225380A (en) * 1978-09-05 1980-09-30 Wickens Justin H Method of producing light emitting semiconductor display
JPS63283174A (ja) * 1987-05-15 1988-11-21 Omron Tateisi Electronics Co 発光ダイオ−ド
US20030062530A1 (en) * 1998-12-24 2003-04-03 Kabushiki Kaisha Toshiba. Semiconductor light emitting device and its manufacturing method
EP1420462A1 (fr) * 2002-11-13 2004-05-19 Heptagon Oy Dispositif émetteur de lumière
EP1460738A2 (fr) * 2003-03-21 2004-09-22 Avalon Photonics AG Technique de réplication au niveau de platine pour des structures optomécaniques sur optoélectroniques
WO2005024962A2 (fr) * 2003-08-29 2005-03-17 Osram Opto Semiconductors Gmbh Puce de diode electroluminescente a mince couche et son procede de production
US20050141240A1 (en) * 2003-09-30 2005-06-30 Masayuki Hata Light emitting device and fabrication method thereof
WO2005048361A2 (fr) * 2003-11-12 2005-05-26 Matsushita Electric Works, Ltd. Procede de production d'un dispositif electroluminescent

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2056368A1 (fr) * 2007-10-29 2009-05-06 LG Electronics Inc. Dispositif électroluminescent et son procédé de fabrication
JP2009111323A (ja) * 2007-10-29 2009-05-21 Lg Electronics Inc 発光素子及びその製造方法
US7755097B2 (en) 2007-10-29 2010-07-13 Lg Electronics Inc. Light emitting device having light extraction structure and method for manufacturing the same
US8004003B2 (en) 2007-10-29 2011-08-23 Lg Electronics Inc. Light emitting device having light extraction structure
EP2403021A1 (fr) * 2007-10-29 2012-01-04 LG Electronics Dispositif électroluminescent et son procédé de fabrication
US9178112B2 (en) 2007-10-29 2015-11-03 Lg Electronics Inc. Light emitting device having light extraction structure
US9147806B2 (en) 2010-09-20 2015-09-29 Osram Opto Semiconductor Gmbh Optoelectronic semiconductor chip, method of fabrication and application in an optoelectronic component
CN103119734A (zh) * 2010-09-20 2013-05-22 欧司朗光电半导体有限公司 光电子半导体芯片，制造方法和在光电子器件中的应用
WO2012038318A1 (fr) * 2010-09-20 2012-03-29 Osram Opto Semiconductors Gmbh Puce semi-conductrice optoélectronique, procédé de fabrication et utilisation dans un composant optoélectronique
CN103907210A (zh) * 2011-10-28 2014-07-02 欧司朗光电半导体有限公司 光电子半导体芯片和用于制造光电子半导体芯片的方法
DE102011117381A1 (de) * 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US9172014B2 (en) 2011-10-28 2015-10-27 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
WO2017054937A1 (fr) * 2015-09-29 2017-04-06 Philips Lighting Holding B.V. Source de lumière avec découplage de diffraction
CN108139035A (zh) * 2015-09-29 2018-06-08 飞利浦照明控股有限公司 具有衍射耦出的光源
US10539730B2 (en) 2015-09-29 2020-01-21 Signify Holding B.V. Light source with diffractive outcoupling

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