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WO2007024359A1 - A phosphor prepared by mixing aluminum garnet and silicate with the addition of rare-earth meaterials - Google Patents

A phosphor prepared by mixing aluminum garnet and silicate with the addition of rare-earth meaterials Download PDF

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Publication number
WO2007024359A1
WO2007024359A1 PCT/US2006/027187 US2006027187W WO2007024359A1 WO 2007024359 A1 WO2007024359 A1 WO 2007024359A1 US 2006027187 W US2006027187 W US 2006027187W WO 2007024359 A1 WO2007024359 A1 WO 2007024359A1
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Prior art keywords
phosphor
light
aluminum garnet
silicate
rare earth
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Ceased
Application number
PCT/US2006/027187
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French (fr)
Inventor
Shen-Nan Tong
Shih-Ming Chen
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Intex Recreation Corp
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Intex Recreation Corp
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Filing date
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Publication of WO2007024359A1 publication Critical patent/WO2007024359A1/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7706—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
    • C09K11/7749—Aluminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the present invention relates to a method of preparing a phosphor with
  • a phosphor suitable for producing warm white light more particularly, a phosphor suitable for producing warm white light
  • White light consists of several individual lights of different colors.
  • RGB red, green and blue
  • TAG Titanium Aluminum Garnet
  • RGB phosphor with ultraviolet (UV) light-emitting
  • the third technique is considered to be the
  • TAG yellow phosphor with blue light-emitting devices is based on the
  • present invention involves mixing aluminum garnet, containing or doped
  • Y Yttrium
  • Tb Terbium
  • silicate ingredients ranges from 5%: 95% to 95%: 5%, by weight.
  • the particle size of the phosphor is about 5um, with a PH value of
  • 4837-4276-6592.1 wavelength ranges from 300nm to 470nm
  • UV 300nm-370nm
  • UV 3 near UV
  • the YAG or TAG - silicate mixture with or without a trace of
  • Europium (Eu) 5 is sintered in one or two stages, at about 1300 degrees C
  • materials include, but are not limited to their phosphates or sulfides.
  • the light from the LED excites the phosphor to convert the wavelength
  • wavelength is from about 450nm to about 480nm.
  • FIG 1 illustrates the transverse cross-section of a packaged light-
  • 1 refers to a lead frame
  • 2 refers to a conductive binder
  • Conductive binder 2 comprises a thermal
  • conductive material such as silver powder and adhesive resin, epoxy or
  • FIG. 1 there is shown a lead frame 1, a conductive
  • binder 2 a light-emitting diode chip 3, a reflector 4, phosphor 5, bonding
  • the light-emitting diode chip (blue light) 3 is
  • Terbium aluminum garnet and silicate with the presence of Yttrium.
  • Terbium may
  • a trace amount of Europium is added as a catalyst.
  • Phosphor 5 is then deposited by dispensing equipment on top of device
  • device chip 3 is encapsulated with epoxy 7 to complete the packaging
  • Conductive binder 2 the thermal conductive material
  • 90 comprises silver powder mixed into adhesive resin, epoxy or silicone.
  • LED' s are commonly used for lightweight message displays, status

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)

Abstract

A phosphor comprising a mixture of aluminum garnet and silicate with the addition of rare-earth materials. The phosphor can be excited by light with a wide range of wavelengths, such as ultraviolet, near ultraviolet or blue, to produce white light useful for illumination. By adding rare-earth materials into the phosphor mixture a white light with a warmer color index is produced.

Description

p. r T .*i .1 « o EL ^-y|:gy Miχing Aluminum Garnet and Silicate
With the Addition of Rare-Earth Materials
Field of the Invention
The present invention relates to a method of preparing a phosphor with
aluminum garnet and silicate, with the addition of rare-earth materials,
more particularly, a phosphor suitable for producing warm white light,
while being excited by a light source.
Technical Background
White light consists of several individual lights of different colors. In
order to produce white light, it is required to mix either one color of light
with its complementary color of light, for example, blue light with yellow
light or three primary colors of lights, such as red, green and blue (RGB).
There are currently three primary techniques for producing white light
by using light-emitting diodes. First, one can excite YAG (Yttrium
Aluminum Garnet) or TAG (Terbium Aluminum Garnet), both being a
yellow phosphor, with blue light-emitting devices to produce white light.
Secondly, one can also combine red, blue and green light-emitting diode
chips, to emit three primary colors together to form white light. Finally,
one can excite the RGB phosphor with ultraviolet (UV) light-emitting
devices to produce white light. The third technique is considered to be the
4837-4276-6592.1 1
Figure imgf000003_0001
color rendering of the white
light it produces. However, UV light-emitting devices with considerable
output power will be needed for this technique. This still awaits a
technological breakthrough.
The fundamental process for producing white light by exciting YAG or
TAG yellow phosphor with blue light-emitting devices is based on the
complementary principle of light. However, the white light thus produced
appears cold in its color temperature, due to its lack of red color
ingredient. Therefore, it is desirable to add red phosphor or green
phosphor in the YAG or TAG phosphor in order to lower its color
temperature and produce warmer white light.
Summary of the Invention
It is, therefore, the object of the present invention to provide a
phosphor that can be excited by light with a wider range of wavelengths
to produce warm, white light.
The method of preparing a phosphor employing the concept of the
present invention involves mixing aluminum garnet, containing or doped
with Yttrium (Y) or Terbium (Tb), and silicate, optionally containing
Europium (Eu) as a catalyst. The proportional ratio of the YAG or TAG
and silicate ingredients ranges from 5%: 95% to 95%: 5%, by weight.
The particle size of the phosphor is about 5um, with a PH value of
4837-4276-6592.1
Figure imgf000004_0001
wavelength ranges from 300nm to 470nm,
including UV (300nm-370nm)5 near UV (370nm - 420nm) and blue light
(420nm- 470nm).
The YAG or TAG - silicate mixture, with or without a trace of
Europium (Eu)5 is sintered in one or two stages, at about 1300 degrees C
to about 1600 degrees C for about 3 hours for each stage. The sintered
material is ground into a fine powder and mixed with epoxy or silicone.
The advantages of the present invention can be realized in the context
of a color rendering index. The phosphor prepared employing the
concepts of the present invention can be excited by light with a wide
range of wavelengths, thus producing warm white light having a better
color rendering index. The rare-earth materials in the phosphor mixture
prepared by this method produce warmer, white light. The rare-earth
materials include, but are not limited to their phosphates or sulfides.
The light from the LED excites the phosphor to convert the wavelength
from the blue range to the yellow range. Then the yellow light combines
with the residual blue light to generate white light. The most common
wavelength is from about 450nm to about 480nm.
Brief Description of the Drawing
These and other features and advantages of the present invention will
4837-4276-6592.1 -i Wh . Bum *■• ιi"" ' .ill /. I "1 ii1
SMQ to the following detailed description, when
considered in connection with the accompanying drawing, wherein:
FIG 1, illustrates the transverse cross-section of a packaged light-
emitting diode chip coated with a phosphor of mixed aluminum garnet
and silicate.
In FIG 1, 1 refers to a lead frame, 2 refers to a conductive binder, 3
refers to a light-emitting diode chip (blue light), 4 refers to a reflector, 5
refers to a phosphor (of aluminum garnet and silicate), 6 refers to bonding
wires, 7 refers to an epoxy. Conductive binder 2 comprises a thermal
conductive material, such as silver powder and adhesive resin, epoxy or
silicone.
Description of the Preferred Embodiment
Referring now to FIG. 1 there is shown a lead frame 1, a conductive
binder 2, a light-emitting diode chip 3, a reflector 4, phosphor 5, bonding
wires 6, and epoxy 7. The light-emitting diode chip (blue light) 3 is
placed on the inside of the lead frame 1.
After the anode 8 and cathode 9 of device chip 3 are connected through
bonding wires 6 to lead frame 1, phosphor 5 is prepared by mixing
aluminum garnet and silicate with the presence of Yttrium. Terbium may
also be used. A trace amount of Europium is added as a catalyst. The
4837-4276-6592.1 Λ 85 two stages.
Phosphor 5 is then deposited by dispensing equipment on top of device
chip 3 and fills the space between device chip 3 and reflector 4. Finally,
device chip 3 is encapsulated with epoxy 7 to complete the packaging
process. Conductive binder 2, the thermal conductive material,
90 comprises silver powder mixed into adhesive resin, epoxy or silicone.
As phosphor 5 is being excited by the blue light emitting from device
chip 3, a yellow light, together with near green and near red lights, is
produced, due to the fact that phosphor 5 contains silicate. As a result,
warmer white light, with a better color rendering index, is produced.
95
Industrial Applicability
LED' s are commonly used for lightweight message displays, status
indicators, clusters in traffic signals, calculator displays and car indicator
lights, as well as many other applications.
100 Having described the invention,
We claim:
4837-4276-6592.1

Claims

, , ,,
1. A phosphor comprising a mixture of aluminum garnet and silicate
doped with a rare earth material.
105
2. The phosphor of claim I5 wherein the composition ratio of aluminum
garnet to silicate ranges from 95%:5% to 5%:95% by weight.
3. The phosphor of claim 1, wherein said phosphor has a particle size of
110 about 5 um.
4. The phosphor of claim 1, wherein said phosphor has a PH value of
about 7.
115 5. The phosphor of claim 1 , wherein said phosphor is excited by light
comprising a member from the group consisting of ultra-violet, near
ultra-violet and blue light.
6. The phosphor of claim 1, wherein said phosphor comprises a rare earth
120 phosphate or sulfide to produce warmer, white light.
4837-4276-6592.1 Ke pbif orόMnT l" wherein the rare earth material is Yttrium or
Terbium.
8. The phosphor of claim 1 further comprising a trace amount of
125 Europium.
9. The phosphor of claim 7 further comprising a trace amount of
Europium.
130 10. The phosphor of claim 7, wherein said phosphor further comprises a
rare earth phosphate or sulfide to produce warmer white light.
11. A method of creating white light using a light-emitting device
emitting an ultra-violet, near ultra-violet or blue light, comprising, coating
135 the light-emitting device with a phosphor comprising a mixture of
aluminum garnet and silicate doped with a rare earth material.
12. The method of Claim 11 wherein the rare earth material is Yttrium or
Terbium.
140
4837-4276-6592.I : .
13. The method of claim 11 wherein the phosphor further comprises a
trace amount of Europium.
145
14. The method of claim 11, wherein said phosphor further comprises
a rare earth phosphate or sulfide to produce warmer, white light.
15. The method of claim 11, wherein the mixture of aluminum garnet and
150 silicate doped with a rare earth material is sintered and then mixed with
epoxy or silicone.
16. A phosphor comprising a mixture of aluminum garnet and silicate
doped with Yttrium or Terbium, and a trace amount of Europium,
155 wherein the composition ratio of aluminum garnet to silicate ranges from
95%:5% to 5%:95% by weight,
4837-4276-6592.1
PCT/US2006/027187 2005-08-26 2006-07-13 A phosphor prepared by mixing aluminum garnet and silicate with the addition of rare-earth meaterials Ceased WO2007024359A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510096922.8 2005-08-26
CNA2005100969228A CN1919967A (en) 2005-08-26 2005-08-26 Cocktail fluorescent powder

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WO2007024359A1 true WO2007024359A1 (en) 2007-03-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018032021A1 (en) * 2016-08-08 2018-02-15 General Electric Company Composite materials having red emitting phosphors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249328B1 (en) * 1997-09-10 2001-06-19 International Business Machines Corporation Liquid crystal display device having red, green, and blue fluorescent lamps having a particular phosphor composition or a double tube lamp
US6304027B1 (en) * 1993-02-11 2001-10-16 Samsung Display Devices Co., Ltd. Mixed green-emitting phosphor and cathode ray tube using the same
US6809781B2 (en) * 2002-09-24 2004-10-26 General Electric Company Phosphor blends and backlight sources for liquid crystal displays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6304027B1 (en) * 1993-02-11 2001-10-16 Samsung Display Devices Co., Ltd. Mixed green-emitting phosphor and cathode ray tube using the same
US6249328B1 (en) * 1997-09-10 2001-06-19 International Business Machines Corporation Liquid crystal display device having red, green, and blue fluorescent lamps having a particular phosphor composition or a double tube lamp
US6809781B2 (en) * 2002-09-24 2004-10-26 General Electric Company Phosphor blends and backlight sources for liquid crystal displays

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018032021A1 (en) * 2016-08-08 2018-02-15 General Electric Company Composite materials having red emitting phosphors
US10193030B2 (en) 2016-08-08 2019-01-29 General Electric Company Composite materials having red emitting phosphors

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