WO2007023949A1 - Tool with sintered body polishing surface and method of manufacturing the same - Google Patents
Tool with sintered body polishing surface and method of manufacturing the same Download PDFInfo
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- WO2007023949A1 WO2007023949A1 PCT/JP2006/316737 JP2006316737W WO2007023949A1 WO 2007023949 A1 WO2007023949 A1 WO 2007023949A1 JP 2006316737 W JP2006316737 W JP 2006316737W WO 2007023949 A1 WO2007023949 A1 WO 2007023949A1
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- Prior art keywords
- polishing
- tool according
- polishing tool
- sintered body
- groove
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/2457—Parallel ribs and/or grooves
- Y10T428/24579—Parallel ribs and/or grooves with particulate matter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
Definitions
- the present invention relates to a tool having a sintered body polishing part and a method for manufacturing the tool.
- the present invention is applicable to chemical mechanical polishing (abbreviated as CMP) pads composed mainly of hard urethane and polishing tools capable of processing various semiconductor materials with high flatness and high efficiency. And an effective manufacturing method thereof.
- CMP chemical mechanical polishing
- CMP has been used for planarization of metal film wafers such as an interlayer insulating film as the number of wiring layers in VLSI devices has increased.
- the polishing pad generally made of rigid foam polyurethane
- the wafer polishing rate it is necessary to condition the surface of the polishing pad constantly or intermittently.
- Such electrodeposition type tools are not always satisfactory in holding power because the abrasive grains are only physically fixed to the substrate by the electrodeposited nickel. The grains dropped out and there was room for improvement in tool life.
- a dresser in which a polycrystalline diamond thin film is formed on a working surface of a base metal having a convex portion by a vapor phase synthesis method (Patent Document 3).
- the conventional polishing tool (pad conditioner) as described above has a structure in which a plurality of abrasive grains having different particle diameters are fixed to a substrate (base metal), so that uniform abrasive grains (vertex) are used. Since the level is difficult to obtain, the conditioning process uses only the particles that protrude the most from the substrate (base metal) surface, resulting in intense consumption of these particles that are subjected to excessive loads. Often disabled before the end of its life.
- a wafer made of silicon or the like can be covered with a tool in which a super-abrasive such as diamond is fixed to the surface of a base metal made of rigid metal, regardless of the polishing pad made of urethane foam and the free barrel, This is desirable because it saves time and money for conditioning, but for this to happen, a superabrasive layer of diamond, such as diamond, which is placed on the base metal and forms the cutting edge, has a high precision plane and retains it. It must be possible. However, such a tool was not fully realized.
- Patent Document 1 Japanese Patent Laid-Open No. 2002-337050
- Patent Document 2 JP 2004-291184 A
- Patent Document 3 Japanese Patent Laid-Open No. 10-0771559
- An object of the present invention is to provide a polishing tool capable of high-efficiency machining that solves the problem of the adhesion strength of the bullets to the substrate, the problem of the uneven polishing surface, and the like, and an effective manufacturing method thereof. It is in this.
- it is to provide a polishing tool capable of processing a surface of a semiconductor wafer or the like with high accuracy and high efficiency as a CMP pad conditioner.
- the present inventor has intensively studied to solve the above-described problems, and in addition to a polishing tool having a polishing portion made of a superabrasive sintered body, a plurality of polishing units specific to the polishing portion. As a result of further research, it has been found that the present invention can be completed.
- the present invention is a polishing tool having a polishing portion that also has super-abrasive sintered body strength, wherein the polishing portion includes a plurality of polishing units having a top portion, and each top portion is substantially on the same plane. It relates to a polishing tool.
- the present invention is such that the polishing portion is made of a superabrasive sintered body integrated with a cemented carbide backing material, and the polishing unit is formed by providing a linear groove group in the polishing portion.
- the present invention relates to the polishing tool.
- this invention relates to the said grinding
- the present invention also relates to the above polishing tool, wherein the polishing unit has a quadrangular pyramid shape, and at least one side of the top is bladed.
- the present invention relates to the polishing tool, wherein the polishing unit is a triangular pyramid shape or a triangular frustum shape.
- the present invention also relates to the above polishing tool, wherein the polishing unit has a triangular frustum shape, and at least one side of the top is bladed.
- the present invention relates to the polishing tool, wherein the polishing unit has a shape exhibiting a linear ridge line at the top.
- the polishing unit is a quadrangular pyramid or a triangular pyramid, and the pitch force si of the polishing unit is
- polishing tool which is 500 micrometers or less 200 micrometers or more.
- the polishing unit has a quadrangular pyramid shape or a triangular pyramid shape, and the height force of the polishing unit is
- the present polishing tool is 30 ⁇ m or more.
- the present invention also relates to the polishing tool as described above, wherein the super-particles are diamond. Furthermore, the present invention relates to the above polishing agent, wherein the diamond has a nominal particle size of 40-60 / zm or less. Concerning ingredients.
- the present invention also relates to the polishing tool described above, wherein the thickness of the super-abrasive sintered body is 0.1 mm or more.
- this invention relates to the said grinding
- the present invention also relates to the above polishing tool, wherein the polishing section is disc-shaped or annular.
- the present invention relates to the above polishing tool, wherein the polishing section has an outer diameter of 90 mm or more.
- the present invention also relates to the polishing tool, wherein the height of the top with respect to the bottom of the groove of the polishing part is 1 mm or less.
- the present invention relates to the above polishing tool, wherein the polishing part is composed of two or four divided polishing parts, and each of the divided polishing parts has a fan shape having the same central angle.
- the divided polishing portion has two groove groups, the first groove group is provided parallel to the radial edge of the divided polishing portion, and the second groove group is orthogonal to the first groove group. It is related with the said grinding
- the present invention relates to the above polishing tool, wherein the polishing part has a force of 3 or 6 divided polishing parts, and each of the divided polishing parts has a fan shape having the same central angle.
- the divided polishing portion has three groove groups, the first groove group is provided in parallel to the radial edge of the divided polishing portion, and the second groove group and the third groove group are:
- the present invention relates to the above polishing tool, which is formed so as to intersect at 60 ° and 120 ° with respect to the first groove group, respectively.
- the present invention relates to the polishing tool, wherein the groove is formed by wire-cut electric discharge machining.
- the present invention also relates to the above polishing tool, which is a CMP pad conditioner.
- the present invention relates to a method for producing a polishing tool having a polishing part having a super-agglomerate sintered body strength
- the present invention also relates to a method for manufacturing an abrasive tool having an abrasive part having super-abrasive sintered body strength.
- the present invention relates to the method for regenerating a polishing tool according to any one of the above, comprising the step of regenerating the grooves and the top of the polishing unit by wire-cut electric discharge machining.
- the polishing tool of the present invention uses a polishing portion having super-atomized sintered body strength, and is sintered at a temperature equal to or higher than the melting temperature of the binder, so that the fixing strength of the super-atomized particles is substantially increased.
- a polishing portion having super-atomized sintered body strength, and is sintered at a temperature equal to or higher than the melting temperature of the binder, so that the fixing strength of the super-atomized particles is substantially increased.
- there is no dropout In particular, when diamond particles are used as super-ejections, diamond is subjected to temperature and pressure conditions in which the binder metal melts and the diamond is thermodynamically stable in the manufacturing process, and the diamond fine particles become the binder metal. Due to the strong integration through partial dissolution, the fixing strength is further increased, and virtually no dropout occurs.
- a polishing tool for manufacturing a bonded body is a large-diameter polishing part by cutting out a large-diameter fan-shaped divided polishing part from a small-diameter super-abrasive sintered body that does not cause unevenness of sintering and combining a plurality of these parts. Therefore, it is possible to obtain a highly accurate polishing tool that is homogeneous throughout.
- the polishing portion in which the polishing unit is formed is composed of a superabrasive sintered body having a sufficient thickness on the surface, even if the polishing unit is worn out by use, the wire cut discharge is performed.
- the groove and polishing unit can be easily regenerated by heating and reused as the tool of the present invention.
- each polishing unit is arbitrarily cut by a super-abrasive sintered body force, such as a diamond sintered body, by a wire cut discharge cage, such as a triangular pyramid and a quadrangular pyramid. Since it is easy to control the bottom surface level and height, a tool having a polishing surface (level) with higher accuracy than a conventional polishing tool can be obtained.
- a CMP pad conditioner the surface of a semiconductor wafer can be processed with high accuracy and high efficiency.
- FIG. 1 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. (Example 1)
- FIG. 2 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. (Example 2)
- FIG. 3 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
- FIG. 4 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
- FIG. 5 is a partially enlarged view of FIG.
- FIG. 6 is a partially enlarged view of FIG.
- FIG. 7 is an explanatory view (plan view) showing an example of the configuration of the polishing unit of the polishing tool according to the present invention.
- FIG. 8 is an explanatory view showing a cross section taken along line AA in FIG.
- FIG. 9 is an explanatory view (plan view) showing another configuration example according to the polishing unit of the polishing tool according to the present invention.
- FIG. 10 is an explanatory view showing a cross section taken along line BB in FIG. 9.
- FIG. 11 is an explanatory view showing an embodiment of wire-cut electric discharge machining that can be used in the manufacturing method of the polishing tool according to the present invention.
- FIG. 12 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
- FIG. 13 is an explanatory view (plan view) showing one embodiment of a polishing tool according to the present invention.
- FIG. 15 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
- FIG. 16 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
- FIG. 17 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. Explanation of symbols
- the super-agglomerate sintered body as the material of the polishing tool of the present invention is obtained by treating super-agglomerate powder such as diamond or cBN (cubic boron nitride) in an ultra-high pressure and high-temperature process by a conventional method. It is done. Since the sintered body in this state has a large distortion, the sintered body is preliminarily flattened by die discharge machining. Next, the grooves and the side surfaces of the protrusions are formed stepwise in a manner specified by the present invention, thereby creating a polishing unit, that is, a protrusion portion that directly contacts the object to be polished. When a commercially available product is used as the superabrasive sintered body, although depending on the specification, the surface is flattened, the above-described preplanarization treatment can be omitted.
- super-agglomerate powder such as diamond or cBN (cubic boron nitride) in an ultra-high pressure and high-temperature process by
- wire cutting electric discharge machining die electric discharge machining, other precision electric discharge machining, or laser machining can be used.
- Wire cutting electric discharge force is preferable, and the top of the polishing unit is preferred.
- Wire-cut electric discharge machining is particularly preferred when sharpening sharp edges.
- Wire cutting is a technique in which a wire for electric discharge machining is driven along the surface of the super-abrasive sintered body, and the material is removed by electric discharge between the metal wire and the super-encapsulated sintered body material. Is done.
- the polishing unit is, for example, a plurality of groove groups (hereinafter referred to as divided groove groups) for dividing a polishing surface into an annular sintered body layer having a circular or concentric central circular hole. Can also be created by die-cutting using an electrode having an electrode surface formed in a corresponding shape. Regardless of whether the segment groove group is formed on the surface of the superabrasive layer or the electrode surface, it is easy to make it straight. [0021]
- the dividing groove group can be variously arranged.
- two sets of parallel straight line groups extending to the outer periphery on the opposite side from the outer periphery are formed perpendicular to each other (Fig. 1), and There are three pairs of straight lines intersected at 60 ° (Fig. 2).
- Fig. 1 two sets of parallel straight line groups extending to the outer periphery on the opposite side from the outer periphery
- Fig. 2 There are three pairs of straight lines intersected at 60 ° (Fig. 2).
- square or triangular polishing units are created, respectively.
- the shape of the polishing unit has a linear ridge line at the top (FIG. 3; the polishing unit exhibits a ridge line to the end of the polishing part, FIGS. 4 to 5; the base of the polishing unit is rectangular), etc. It's okay.
- the groove and the inclined surface of the adjacent polishing unit are formed by wire-cut electric discharge machining, so that the ridge line is basically formed parallel to the long side.
- the quadrangular pyramid-shaped polishing units do not necessarily have the same vertical and horizontal pitches, but the CMP conditioner is preferably a square.
- FIG. 6 schematically shows a partially enlarged explanatory view of the polishing tool 1 of FIG. 1.
- the area (X) of the base of the polishing unit 2 that is, superabrasive grains
- the ratio of the top area (Y) to the area of the layer cross section minus the area of the groove 3 around the polishing unit) is preferably 50% or less, particularly preferably 2 to 25%.
- the apex angle of the top of the polishing unit is preferably 30 to 120 °, particularly preferably 60 to 90 °, and still more preferably about 70 to 80 °.
- the depth of the groove (height of the polishing unit from the groove bottom) is suitably 0.1 mm or more and lmm or less, particularly 0.15 mm or more and 0.3 mm or less. If the groove is too shallow, the shavings of the work material will not be discharged efficiently, and the polishing resistance will tend to be excessive. On the other hand, if the depth is too deep, the strength of the polishing unit will be insufficient, and an excessive super-atomized layer thickness will be required.
- the polishing unit is formed as a polygonal column with a top or a straight line, a line segment, a triangle, a square or more, and each side surface is perpendicular to the substrate, and the horizontal cross section is uniform over the entire height.
- each side surface of the polishing unit is inclined to form a frustum, for example, a square.
- a frustum shape or a triangular frustum shape is preferable.
- the shape of a pyramid for example, a quadrangular pyramid or a triangular pyramid is particularly preferable in terms of sharpness.
- one or more sides of a rectangle or triangle are polished with a dedicated tool to sharpen the edges or vertices of the top, so-called “blading”. If done, a better sharpness can be achieved.
- the polishing unit force is a polygonal column or a polygonal frustum
- the top is a polygon (typically a triangle or a quadrangle)
- cutting is performed on at least one side of the top surface.
- a quadrangular pyramid shape or a triangular pyramid shape sufficient sharpness can be achieved without cutting.
- the polishing part of the present invention has an outer diameter of 90 mm or more and a superabrasive layer thickness of 0.1 mm to 1 mm.
- a sintered superabrasive layer one side of a diamond sintered body (PCD) or c-BN sintered body (Pc BN) is bonded to a cemented carbide, that is, a tungsten carbide based composite material or a group 6a of the periodic table.
- a cemented carbide that is, a tungsten carbide based composite material or a group 6a of the periodic table.
- a cemented carbide that is, a tungsten carbide based composite material or a group 6a of the periodic table.
- a structure backed by a composite block composed mainly of metal carbide Adhere the composite side to the tool substrate with an adhesive, etc., and form a section groove on the opposite side to use as a polishing part. .
- a disk-shaped one typically prepared by a uniaxial pressurization type high-temperature ultrahigh-pressure hydrostatic press is commercially available.
- the abrasive tool of the present invention may be prepared for each part and assembled and used as a single abrasive tool when particularly severe flatness is not required.
- the polishing unit is composed of a plurality of divided polishing units
- grooves are formed at the boundary between the divided polishing units in order to obtain an arrangement in which the polishing units are evenly aligned as much as possible in the entire polishing unit. Is appropriate.
- two groups of parallel grooves intersecting at right angles to each other are formed in the two or four divided polishing portions and the polishing unit is a quadrangular pyramid or a truncated pyramid shape, polishing without disturbance except for the outer peripheral portion. Unit alignment is obtained.
- a wire for electric discharge machining is sent along the surface of the polished portion and released.
- linear grooves are formed on the surface of the polished portion by electricity.
- the shear in the Z-axis direction of the polishing portion and cutting the polishing portion along the side surface contour of the quadrangular pyramid the side surface of the cone-shaped body adjacent to the groove is created. By repeating this operation, parallel groove groups are formed.
- the top of the cone is composed of one or a plurality of diamond particles.
- the protruding height of the top of the cone or frustum to the groove bottom is 200 m or less and 30 m or more for both the triangle and the quadrangle. If the protrusion is too shallow, the polishing body itself comes into direct contact with the work such as a pad, and conditioning tends not to be performed effectively. On the other hand, if it is too large, the strength of the polishing unit will be insufficient or excessive.
- the thickness of the super-abrasive layer is required. On the other hand, the interval (pitch) between adjacent grooves can be 1500 m or less, and the lower limit can be a force due to the diameter of the wire for the wire-cut discharge cage to be used, for example, about 200 / zm.
- the polishing performance of the above-mentioned polishing unit depends on the particle size of the super-cannon contained in the top of the cone-shaped body.
- the superabrasive grains are diamond particles, that is, when the sintered body constituting the polished part is a sintered diamond (PCD) layer
- the diamond particle size is 40-60 ⁇ m or less
- the diamond sintered body that can be used in the polishing portion of the present invention comprises diamond particles that are thermodynamically bonded together with a cemented carbide as a backing material and, if necessary, a binder metal such as a core. It is obtained by subjecting it to stable ultra-high pressure and high temperature conditions. Processing from the sintered body to the polishing portion of the present invention can be realized by precision electric discharge machining, typically cut out by wire cut electric discharge machining, and formation of a polishing unit by surface processing.
- wire-cut discharge Karoe In wire-cut discharge Karoe, in general, an electric discharge machining wire is brought into contact with a superabrasive sintered body and discharged, the wire is moved horizontally so as to obtain a desired groove width, and the side surface of the polishing unit is further moved. Move to form.
- the tool of the present invention can be manufactured in several shapes as illustrated in FIGS.
- the polishing part can be made in a single continuous circle and an annular shape as illustrated in FIGS. 12 and 13, but in the present invention, as shown in FIGS. Since the polishing portion can be configured with a plurality of divided polishing portions without any problem, an annular polishing portion having a large outer diameter of 95 mm or more can be easily obtained particularly in these cases.
- the radial width is preferably 15 mm or more.
- the polished portion can be a disc shape (without a central hole) instead of an annular shape. Also, as shown in Fig. 12 and Fig.
- polishing unit is composed of a plurality of divided polishing units, as illustrated in FIGS.
- the polishing unit arrangement By setting the polishing unit arrangement so that the boundary part (joint part) between two adjacent divided polishing parts becomes a groove, the polishing unit arrangement is disturbed by the divided structure of the polishing part, and the workpiece (polishing pad) associated therewith ) Can be avoided or minimized.
- the number of divisions of the polishing part and the shape of the available polishing units are related.
- the tri-section (center angle 120 °) polished part has a triangular pyramid shape (Figs. 16 and 17).
- a large-diameter polishing tool cutting to a predetermined size and shape from a small-diameter super-encapsulated sintered body (preferably a diamond sintered body) capable of uniform sintering. Then, a divided polishing part formed by heating is prepared. A plurality of divided polished parts are bonded to a flat disk surface or an annular surface of a rigid substrate made of various steels using an adhesive or the like, so that a large-diameter disk shape or an annular shape is joined. A polishing portion (a shape having a concentric circular hole in the center of the disk) can be obtained.
- a small-diameter super-encapsulated sintered body preferably a diamond sintered body
- Each polishing part 51, 61, 71, 81, 91, 101 joins the cemented carbide side to the flat circular surface of the circular substrate 52, 62, 72, 82, 92, 102, and is generally circular. Or make it present an annular polished part.
- the superabrasive sintered body bonded to the substrate is then subjected to wire-cut electric discharge machining in the following manner, and the superabrasive sintered body is subjected to an electric discharge process between the wire-force electric discharge machining wire and the superabrasive sintered body.
- Surface of sintered powder A set of linear groove groups 53, 63, 73, 83, 93, 103 which are parallel to each other at regular intervals are formed.
- the wire is driven parallel to the substrate surface or the substrate bottom surface and enters the sintered body layer (typically a sintered diamond (PCD) layer) from a pre-planarized surface.
- the sintered body layer is further carved into a cemented carbide layer if the sintered body layer is thin.
- the wire is driven and cut in the thickness direction (Z-axis direction) of the super-orbital sintered body to form a groove.
- the first groove formation in one groove group can be started at any position force in either a triangular pyramid or a quadrangular pyramid on a 360 ° continuous circular or annular surface. If this is the case, the joints 54, 64, 74, 84, 94, and 104 of the divided polishing part are always provided with grooves, and then on both sides, with a constant pitch and parallel to the entire surface. To form.
- the superabrasive sintered body is then rotated together with the substrate around the central axis of the substrate by the groove group crossing angle OC.
- the second linear parallel groove group 55, 65, 75, 85, 95, 105 and the inclined side surface adjacent to each groove are formed at the above-mentioned fixed intervals.
- ⁇ is 90 ° for 180 ° and 90 ° fan shapes
- the polishing unit has a quadrangular pyramid shape or frustum shape.
- the second linear parallel groove group and the inclined side surface adjacent to each groove are formed at the same regular intervals.
- An inclined side surface is formed.
- ⁇ can be either 90 ° or 60 °.
- the groove and the triangular or quadrangular pyramid or frustum-like body are obtained by driving the discharge wire at a height (level) in which the substrate bottom surface force is equally spaced in the thickness direction. Can be formed on a level parallel to the bottom surface of the substrate.
- the triangular pyramid or the quadrangular pyramid of the polishing unit does not necessarily need to be entirely composed of a superabrasive sintered body, and at least about 60 m including the apex of the cone-shaped body. If this part (height) is a super-abrasive sintered body, it can be used even if the lower part is a cemented carbide.
- a polishing tool 1 having a structure schematically shown in FIG. 1 was prepared.
- a PCD block with a diameter of 90 mm was used as a tool material, in which a sintered diamond layer with a thickness of 0.6 mm was integrated with cemented carbide by simultaneous sintering.
- the surface of the sintered diamond layer is flattened by an electric discharge cage (EDM), and a polishing unit 2 having a square top of 260 m on one side is obtained by a wire cut electric discharge cage. It was formed by engraving parallel linear grooves 3 having a width of 560 m.
- the area of the top portion (not shown) of the polishing unit 2 corresponds to about 10% of the cross-sectional area of the super-abrasive sintered layer excluding the peripheral portion (the groove 3 portion).
- the top edge was edged and used as a CMP conditioner.
- An annular polishing tool 4 schematically shown in FIG. 2 was produced. 0.6mm thick sintered c BN layer is integrally formed with cemented carbide by simultaneous sintering. From a PcBN block, wire cut discharge calorie, 90 ° fan with 60mm outer radius and 24mm inner radius. 4 molds were cut out and used as a tool material The above fan mold was attached to a SUS stainless steel substrate and combined into a complete circle. The surface of the sintered diamond layer is polished and flattened, and by wire-cut electric discharge machining, a polishing unit 5 having an apex of an equilateral triangle with a side of 350 ⁇ m is formed into a parallel straight groove 6 with a width of 560 ⁇ m. Formed in groups. In this case, the area of the top of the polishing unit is 7% of the entire superabrasive sintered layer. The obtained tool was bladed by the same operation as in Example 1 and used for polishing the surface of the silicon wafer.
- a polishing tool having the structure schematically shown in FIG. 12 was prepared. Polished diamond sintered body with a diameter of 100 mm, with a diamond particle force of nominal particle size of 40-60 ⁇ m and a 0.5 mm thick PCD layer integrated with cemented carbide (WC—8% Co) by simultaneous sintering This was used as a part and fixed to an SUS316 stainless steel circular substrate having a diameter of 108 mm with an epoxy adhesive.
- Polished diamond sintered body with a diameter of 100 mm, with a diamond particle force of nominal particle size of 40-60 ⁇ m and a 0.5 mm thick PCD layer integrated with cemented carbide (WC—8% Co) by simultaneous sintering This was used as a part and fixed to an SUS316 stainless steel circular substrate having a diameter of 108 mm with an epoxy adhesive.
- the surface of the PCD layer was flattened with a mold discharge cage and then cut into the PCD layer with a wire cut discharge cage to form a straight groove having a width of 200 m passing through the center of the material. Further wires Driving to the side and moving in a direction away from the substrate (z direction), a groove having a necessary width was formed and the side surface of the cone was cut out.
- wire cutting discharge is performed under the same conditions to form a second linear groove group orthogonal to the above groove group, and at the same time The sides of the cones in the orthogonal direction were cut out to form a group of quadrangular pyramids as shown in Figs. 7 and 8 with a height of 200 m.
- Example 3 Using a diamond sintered body with an outer diameter of 100 mm and an inner diameter of 70 mm as a polishing part, in which a 0.5 mm thick PCD layer composed of diamond particles with a nominal particle size of 0-2 ⁇ m is integrated with cemented carbide The operation of Example 3 was repeated to produce a polishing tool having a quadrangular pyramid-shaped polishing unit. First, the surface of the flat PCD layer was wire-cut discharge force, and a straight groove with a width of 140 ⁇ m passing through the center of the material was formed. Furthermore, the necessary groove width was expanded and the side surfaces of the cones were cut out by manipulating the wires. By repeating this, a group of parallel grooves with a groove interval of 200 m and a roof-like protrusion with an apex angle of 60 ° were formed on the entire material surface.
- the second straight groove group is formed by performing wire cut discharge heating under the same conditions, and at the same time, the side surface of the second conical body is formed. Cut out to form a group of quadrangular pyramids with a height of 200 m.
- Tools having the respective configurations were produced using the following various types of divided polishing portions. All diamond diamonds have a nominal grain size of 20-30 m.
- the wire-cut operation is essentially the same for triangular pyramid polishing units, except that the tool material is rotated twice by 60 °, differing from a square pyramid polishing unit that rotates 90 ° only once. Not different.
- the operating conditions and results are shown in the following table.
- the apex interval is 2 or 4 triangular pyramid
- the polishing tool of the present invention can be used as various types of polishing tools, but can be particularly suitably used as a disk-type rotary polishing tool. As an application, it is particularly suitable for use as a CMP pad conditioner, and is also suitable for directly polishing the surface of a semiconductor wafer or the like. In addition to these, it can be applied to high-precision polishing of various work materials.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
明 細 書 Specification
焼結体研磨部を持つ工具およびその製造方法 Tool having sintered body polishing portion and method for manufacturing the same
技術分野 Technical field
[0001] 本発明は、焼結体研磨部を持つ工具およびその製造方法に関する。とくに本発明 は、主に硬質ウレタンで構成された化学的機械的研磨 (chemic - mechanical polishin g:CMPと略す)パッド用や、各種半導体材料を高平面度かつ高能率で加工可能な研 磨工具およびその効果的な製造方法に関する。 The present invention relates to a tool having a sintered body polishing part and a method for manufacturing the tool. In particular, the present invention is applicable to chemical mechanical polishing (abbreviated as CMP) pads composed mainly of hard urethane and polishing tools capable of processing various semiconductor materials with high flatness and high efficiency. And an effective manufacturing method thereof.
背景技術 Background art
[0002] 近年、超 LSIデバイスにおける配線の多層化が進むにつれて、層間絶縁膜ゃシリ コン等金属膜ウェハの平坦ィ匕に CMPが用いられてきて!/、る。そして CMPで用いられ る研磨パッド (一般に硬質発泡ポリウレタン製)の高い平坦ィ匕およびウェハ研磨速度を 維持するためには、該研磨パッドの表面を常時または間欠的にコンディショニングす る必要がある。 In recent years, CMP has been used for planarization of metal film wafers such as an interlayer insulating film as the number of wiring layers in VLSI devices has increased. In order to maintain the high flatness of the polishing pad (generally made of rigid foam polyurethane) used in CMP and the wafer polishing rate, it is necessary to condition the surface of the polishing pad constantly or intermittently.
[0003] 従来、この研磨パッドのコンディショニングの際、ダイヤモンド砲粒を電着により基板 に固着した工具が使用されて 、る。このような電着タイプのコンディショユング用のェ 具の例として、円板形基台の円形表面の中央に、砲粒を配置しない中空領域を、そ の外側に第一の、さらにその外側に第二の砥粒層領域をそれぞれ設け、第一の砥 粒層領域には、間隔をおいて小砲粒層部が複数列設けられ、各小砲粒層部は、略 部分球面状を呈する隆起部の表面に、超砲粒を金属めつき相で固着したものであつ て、第二の砲粒層領域は、リング状の円周隆起部に超砲粒を金属めつき相で固着し て構成されて 、る回転研磨工具が公知である (特許文献 1)。 [0003] Conventionally, when this polishing pad is conditioned, a tool in which diamond barrels are fixed to a substrate by electrodeposition has been used. As an example of such an electrodeposition-type conditioning tool, a hollow area in which no bullets are arranged is located at the center of the circular surface of the disk-shaped base, the first being outside, and the outside being further outside. Each of the second abrasive layer regions is provided, and the first abrasive layer region is provided with a plurality of rows of small munition layer portions spaced from each other, and each of the blast particle layer portions has a substantially partial spherical shape. In the bulge surface, the super-abrasive particles are fixed with a metal plating phase, and the second particle layer area is fixed to the ring-shaped circumferential ridges with a metal plating phase. Such a rotary polishing tool is known (Patent Document 1).
このような電着タイプの工具は、砥粒の基板への固着が電着されたニッケルにより 物理的に固着されているだけであることから保持力が必ずしも満足いくものではなぐ 使用中にダイヤモンド砲粒が脱落し、工具寿命は改善の余地があった。 Such electrodeposition type tools are not always satisfactory in holding power because the abrasive grains are only physically fixed to the substrate by the electrodeposited nickel. The grains dropped out and there was room for improvement in tool life.
[0004] また、ダイヤモンド等力 なる砲粒をレジンボンド材で円形回転平面上に固着した 砥材層を有し、該砥材層表面に放射状および同心円状にスリットを設けた研磨工具 が公知である(特許文献 2)。 しかし、レジンボンド材による砲粒の保持強度は必ずしも満足できるレベルにな!、た め、用途によっては充分な工具寿命が得られず、また電着工具においても満足でき るレベルにはなかった。 [0004] Further, there is a known polishing tool having an abrasive layer in which a ball of diamond isotropic force is fixed on a circular rotation plane with a resin bond material, and radial and concentric slits are provided on the surface of the abrasive layer. Yes (Patent Document 2). However, the retention strength of the barrel with resin bond material is not always satisfactory! Therefore, depending on the application, a sufficient tool life could not be obtained, and the electrodeposition tool was not at a satisfactory level.
[0005] また、凸部を有する台金の作用面に、気相合成法により多結晶ダイヤモンド薄膜を 形成してなるドレッサが公知である(特許文献 3)。 [0005] Further, a dresser is known in which a polycrystalline diamond thin film is formed on a working surface of a base metal having a convex portion by a vapor phase synthesis method (Patent Document 3).
しかし、気相合成法による形成では、台金の小さな凹凸に忠実にダイヤモンド薄膜 を形成することは困難で、必ずしも十分な精度が得られず、また、薄膜と台金との接 合力も十分とはいえない。 However, it is difficult to form a diamond thin film faithfully to the small unevenness of the base metal by the vapor phase synthesis method, so that sufficient accuracy cannot be obtained, and the bonding force between the thin film and the base metal is sufficient. I can't say that.
[0006] 上記のような従来の研磨工具 (パッドコンディショナー)は、基板 (台金)に、粒子径が それぞれ異なる複数個の砥粒粒子を固着した構造の故に、一様な砥粒 (頂点)レベル が得にくいので、コンディショニング工程では基板 (台金)面に対して最も突き出た粒 子のみが使用される結果、過度の負荷に供されるこれらの粒子の消耗が激しぐ結局 本来の工具寿命に達する前に使用不可となることが多い。 [0006] The conventional polishing tool (pad conditioner) as described above has a structure in which a plurality of abrasive grains having different particle diameters are fixed to a substrate (base metal), so that uniform abrasive grains (vertex) are used. Since the level is difficult to obtain, the conditioning process uses only the particles that protrude the most from the substrate (base metal) surface, resulting in intense consumption of these particles that are subjected to excessive loads. Often disabled before the end of its life.
[0007] シリコン等のウェハを、発泡ウレタン製の研磨パッドと遊離砲粒に依らず、剛性金属 製の台金表面にダイヤモンド等の超砲粒を固定した工具でカ卩ェすることができれば 、コンディショニングのための時間および経費が節約できるので望ましいが、これが実 現するためには、台金上に配置され切れ刃を構成するダイヤモンド等超砥粒層が高 精度の平面を有し、かつ保持できなければならない。し力しながらこのような工具は、 十分には実現されていな力つた。 [0007] If a wafer made of silicon or the like can be covered with a tool in which a super-abrasive such as diamond is fixed to the surface of a base metal made of rigid metal, regardless of the polishing pad made of urethane foam and the free barrel, This is desirable because it saves time and money for conditioning, but for this to happen, a superabrasive layer of diamond, such as diamond, which is placed on the base metal and forms the cutting edge, has a high precision plane and retains it. It must be possible. However, such a tool was not fully realized.
特許文献 1:特開 2002— 337050号公報 Patent Document 1: Japanese Patent Laid-Open No. 2002-337050
特許文献 2:特開 2004— 291184号公報 Patent Document 2: JP 2004-291184 A
特許文献 3 :特開平 10— 071559号公報 Patent Document 3: Japanese Patent Laid-Open No. 10-0771559
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0008] 本発明の課題は、砲粒の基板への固着強度問題ゃ不均一な研磨面の問題等が解 決された高能率で加工可能な研磨工具およびその効果的な製造方法を提供するこ とにある。特に、 CMPパッドコンディショナーとして、半導体ウェハ等の表面を高精度 かつ高能率で加工可能な研磨工具を提供することにある。 課題を解決するための手段 [0008] An object of the present invention is to provide a polishing tool capable of high-efficiency machining that solves the problem of the adhesion strength of the bullets to the substrate, the problem of the uneven polishing surface, and the like, and an effective manufacturing method thereof. It is in this. In particular, it is to provide a polishing tool capable of processing a surface of a semiconductor wafer or the like with high accuracy and high efficiency as a CMP pad conditioner. Means for solving the problem
[0009] 本発明者は、上記の課題を解決すべく鋭意研究を重ねる中で、超砥粒焼結体から なる研磨部をもつ研磨工具にぉ 、て、研磨部に特定の複数の研磨単位を形成する ことにより、カゝかる課題を解決し得ることを見出し、さらに研究を進めた結果、本発明 を完成するに至った。 [0009] The present inventor has intensively studied to solve the above-described problems, and in addition to a polishing tool having a polishing portion made of a superabrasive sintered body, a plurality of polishing units specific to the polishing portion. As a result of further research, it has been found that the present invention can be completed.
すなわち本発明は、超砲粒焼結体力もなる研磨部をもつ研磨工具であって、研磨 部が、頂部を有する複数の研磨単位を含み、各頂部が相互に略同一平面上にある、 前記研磨工具に関する。 That is, the present invention is a polishing tool having a polishing portion that also has super-abrasive sintered body strength, wherein the polishing portion includes a plurality of polishing units having a top portion, and each top portion is substantially on the same plane. It relates to a polishing tool.
さらに本発明は、研磨部が、超硬合金の裏打ち材に焼結一体化した超砥粒焼結体 からなり、研磨単位が、該研磨部に直線溝群を設けることにより形成されたものである 、前記の研磨工具に関する。 Further, the present invention is such that the polishing portion is made of a superabrasive sintered body integrated with a cemented carbide backing material, and the polishing unit is formed by providing a linear groove group in the polishing portion. The present invention relates to the polishing tool.
また本発明は、頂部に刃付けが行われている、前記の研磨工具に関する。 さらに本発明は、研磨単位が四角錐状または四角錐台状である、前記の研磨工具 に関する。 Moreover, this invention relates to the said grinding | polishing tool by which blade attachment is performed to the top part. Furthermore, the present invention relates to the polishing tool, wherein the polishing unit is a quadrangular pyramid or a truncated pyramid.
[0010] また本発明は、研磨単位が四角錐台状であり、頂部の少なくとも一辺に刃付けが行 われている、前記の研磨工具に関する。 [0010] The present invention also relates to the above polishing tool, wherein the polishing unit has a quadrangular pyramid shape, and at least one side of the top is bladed.
さらに本発明は、研磨単位が三角錐状または三角錐台状である、前記の研磨工具 に関する。 Furthermore, the present invention relates to the polishing tool, wherein the polishing unit is a triangular pyramid shape or a triangular frustum shape.
また本発明は、研磨単位が三角錐台状であり、頂部の少なくとも一辺に刃付けが行 われている、前記の研磨工具に関する。 The present invention also relates to the above polishing tool, wherein the polishing unit has a triangular frustum shape, and at least one side of the top is bladed.
さらに本発明は、研磨単位が頂部に直線状の稜線を呈する形状である、前記の研 磨工具に関する。 Furthermore, the present invention relates to the polishing tool, wherein the polishing unit has a shape exhibiting a linear ridge line at the top.
また本発明は、研磨単位が四角錐状または三角錐状であり、研磨単位のピッチ力 si In the present invention, the polishing unit is a quadrangular pyramid or a triangular pyramid, and the pitch force si of the polishing unit is
500 μ m以下 200 μ m以上である、前記の研磨工具に関する。 It is related with the said polishing tool which is 500 micrometers or less 200 micrometers or more.
さらに本発明は、研磨単位が四角錐状または三角錐状であり、研磨単位の高さ力 ¾ Further, in the present invention, the polishing unit has a quadrangular pyramid shape or a triangular pyramid shape, and the height force of the polishing unit is
00 μ m以下 30 μ m以上である、前記の研磨工具に関する。 00 μm or less The present polishing tool is 30 μm or more.
また本発明は、超砲粒がダイヤモンドである、前記の研磨工具に関する。 さらに本発明は、ダイヤモンドの公称粒度が 40-60 /z m以下である、前記の研磨ェ 具に関する。 The present invention also relates to the polishing tool as described above, wherein the super-particles are diamond. Furthermore, the present invention relates to the above polishing agent, wherein the diamond has a nominal particle size of 40-60 / zm or less. Concerning ingredients.
また本発明は、超砲粒焼結体の厚さが 0.1mm以上である、前記の研磨工具に関す る。 The present invention also relates to the polishing tool described above, wherein the thickness of the super-abrasive sintered body is 0.1 mm or more.
さらに本発明は、円板状または円環状である、前記の研磨工具に関する。 Furthermore, this invention relates to the said grinding | polishing tool which is disk shape or annular | circular shape.
[0011] また本発明は、研磨部が円板状または円環状である、前記の研磨工具に関する。 [0011] The present invention also relates to the above polishing tool, wherein the polishing section is disc-shaped or annular.
さらに本発明は、研磨部の外径が 90mm以上である、前記の研磨工具に関する。 また本発明は、研磨部の溝の底に対する頂部の高さが lmm以下である、前記の研 磨工具に関する。 Furthermore, the present invention relates to the above polishing tool, wherein the polishing section has an outer diameter of 90 mm or more. The present invention also relates to the polishing tool, wherein the height of the top with respect to the bottom of the groove of the polishing part is 1 mm or less.
さらに本発明は、研磨部が、 2個または 4個の分割研磨部からなり、該分割研磨部 がそれぞれ中心角の等しい扇状である、前記の研磨工具に関する。 Furthermore, the present invention relates to the above polishing tool, wherein the polishing part is composed of two or four divided polishing parts, and each of the divided polishing parts has a fan shape having the same central angle.
また本発明は、分割研磨部が、 2つの溝群を有し、第一溝群は分割研磨部の半径 方向の縁に対して平行に設けられ、第二溝群は第一溝群に直交して形成されている 、前記の研磨工具に関する。 Further, according to the present invention, the divided polishing portion has two groove groups, the first groove group is provided parallel to the radial edge of the divided polishing portion, and the second groove group is orthogonal to the first groove group. It is related with the said grinding | polishing tool currently formed.
さらに本発明は、研磨部が、 3個または 6個の分割研磨部力 なり、該分割研磨部 がそれぞれ中心角の等しい扇状である、前記の研磨工具に関する。 Furthermore, the present invention relates to the above polishing tool, wherein the polishing part has a force of 3 or 6 divided polishing parts, and each of the divided polishing parts has a fan shape having the same central angle.
また本発明は、分割研磨部が、 3つの溝群を有し、第一溝群は分割研磨部の半径 方向の縁に対して平行に設けられ、第二溝群および第三溝群は、それぞれ第一溝 群に対し、 60° および 120° で交わるように形成されている、前記の研磨工具に関す る。 Further, according to the present invention, the divided polishing portion has three groove groups, the first groove group is provided in parallel to the radial edge of the divided polishing portion, and the second groove group and the third groove group are: The present invention relates to the above polishing tool, which is formed so as to intersect at 60 ° and 120 ° with respect to the first groove group, respectively.
さらに本発明は、溝の形成がワイヤカット放電加工による、前記の研磨工具に関す る。 Furthermore, the present invention relates to the polishing tool, wherein the groove is formed by wire-cut electric discharge machining.
また本発明は、 CMPパッドコンディショナーである、前記の研磨工具に関する。 The present invention also relates to the above polishing tool, which is a CMP pad conditioner.
[0012] さらに本発明は、超砲粒焼結体力 なる研磨部をもつ研磨工具の製造方法であつ て、 [0012] Furthermore, the present invention relates to a method for producing a polishing tool having a polishing part having a super-agglomerate sintered body strength,
(1)超硬合金の裏打ち材に超砥粒を焼結一体化し、超砥粒焼結体を得る工程、 (1) A process of sintering and superimposing superabrasive grains on a cemented carbide backing material to obtain a superabrasive sintered body,
(2)得られた超砥粒焼結体の研磨部を平坦ィ匕する工程、 (2) a step of flattening a polishing portion of the obtained superabrasive sintered body,
(3)平坦化した超砥粒焼結体に直線溝群を設け、複数の研磨単位を形成し、研磨部 とする工程 を含む、前記製造方法に関する。 (3) A process of providing a group of linear grooves in a flattened superabrasive sintered body to form a plurality of polishing units to form a polishing portion It is related with the said manufacturing method containing.
また本発明は、超砲粒焼結体力 なる研磨部をもつ研磨工具の製造方法であって The present invention also relates to a method for manufacturing an abrasive tool having an abrasive part having super-abrasive sintered body strength.
(1)超硬合金の裏打ち材に超砥粒を焼結一体化し、超砥粒焼結体を得る工程、(1) A process of sintering and superimposing superabrasive grains on a cemented carbide backing material to obtain a superabrasive sintered body,
(2)得られた超砥粒焼結体から、 1つの扇状の分割研磨部を切り出す工程、(2) From the obtained superabrasive sintered body, a step of cutting out one fan-shaped divided polishing portion,
(3)前記 (2)で得られた扇状の分割研磨部と中心角の等 U、複数の扇状の分割研 磨部を得る工程、 (3) a step of obtaining a plurality of fan-shaped divided polished portions, such as U and the central angle of the fan-shaped divided polished portions obtained in (2) above,
(4)得られた複数の扇状の分割研磨部を密着隣接して平坦な基板表面上に固着し て、円板状または円環状の研磨部にする工程、 (4) a step of sticking the obtained fan-shaped divided polishing portions on a flat substrate surface in close contact with each other to form a disk-shaped or annular polishing portion;
(5)前記 (4)で得られた円板状または円環状の研磨部の分割研磨部間の境界に溝 を設け、複数の研磨単位を形成する工程 (5) A step of forming a plurality of polishing units by providing a groove at the boundary between the divided polishing portions of the disk-shaped or annular polishing portion obtained in (4).
を含む、前記製造方法に関する。 It is related with the said manufacturing method containing.
さらに本発明は、前記のいずれかに記載の研磨工具の再生方法であって、溝およ び研磨単位の頂部をワイヤカット放電加工により再生する工程を含む、前記再生方 法に関する。 Furthermore, the present invention relates to the method for regenerating a polishing tool according to any one of the above, comprising the step of regenerating the grooves and the top of the polishing unit by wire-cut electric discharge machining.
発明の効果 The invention's effect
[0013] 本発明の研磨工具は、超砲粒焼結体力 なる研磨部を用いており、結合材の溶融 温度以上で焼結されていることにより、超砲粒の固着強度が大きぐ実質上脱落がな いという利点がある。とくに超砲粒としてダイヤモンド粒子を用いた場合、ダイヤモンド は、製造工程において結合材金属が溶融しかつダイヤモンドが熱力学的に安定な 温度圧力条件下に供されており、ダイヤモンド微粒子が結合材金属への部分溶解を 介して強力に一体化されていることにより、固着強度がさらに大きいため、実質上脱 落がなくなる。 [0013] The polishing tool of the present invention uses a polishing portion having super-atomized sintered body strength, and is sintered at a temperature equal to or higher than the melting temperature of the binder, so that the fixing strength of the super-atomized particles is substantially increased. There is an advantage that there is no dropout. In particular, when diamond particles are used as super-ejections, diamond is subjected to temperature and pressure conditions in which the binder metal melts and the diamond is thermodynamically stable in the manufacturing process, and the diamond fine particles become the binder metal. Due to the strong integration through partial dissolution, the fixing strength is further increased, and virtually no dropout occurs.
[0014] また、一般に、広い面積で焼結するとムラができ、全体的に均質な研磨部を大径で 作成することは困難であるが、本発明の複数の分割研磨部力 超砲粒焼結体を製造 する研磨工具は、焼結のムラができない小径の超砲粒焼結体から、径の大きな扇状 の分割研磨部を切り抜き、これを複数組み合わせることによって、大径の研磨部とす ることから、全体的に均質な、高精度の研磨工具とすることができる。 [0015] さらに研磨単位が形成されている研磨部は、表面が充分な厚さを持つ超砥粒焼結 体で構成されていることにより、研磨単位が使用により磨滅しても、ワイヤカット放電加 ェなどにより溝および研磨単位を容易に再生して、本発明の工具として再利用できる [0014] In general, when sintering is performed over a large area, unevenness is generated, and it is difficult to produce an overall uniform polished portion with a large diameter. A polishing tool for manufacturing a bonded body is a large-diameter polishing part by cutting out a large-diameter fan-shaped divided polishing part from a small-diameter super-abrasive sintered body that does not cause unevenness of sintering and combining a plurality of these parts. Therefore, it is possible to obtain a highly accurate polishing tool that is homogeneous throughout. [0015] Further, since the polishing portion in which the polishing unit is formed is composed of a superabrasive sintered body having a sufficient thickness on the surface, even if the polishing unit is worn out by use, the wire cut discharge is performed. The groove and polishing unit can be easily regenerated by heating and reused as the tool of the present invention.
[0016] また本発明では、各研磨単位はワイヤカット放電カ卩ェなどによって、ダイヤモンド焼 結体などの超砲粒焼結体力 任意に切り出されるものであり、三角錐体および四角 錐体などの底面レベルおよび高さの制御が容易であるから、従来の研磨工具に比し て、より高精度の研磨面 (レベル)をもつ工具が得られる。特に CMPパッドコンディショ ナ一として半導体ウェハ等の表面を高精度かつ高能率で加工可能である。 [0016] In the present invention, each polishing unit is arbitrarily cut by a super-abrasive sintered body force, such as a diamond sintered body, by a wire cut discharge cage, such as a triangular pyramid and a quadrangular pyramid. Since it is easy to control the bottom surface level and height, a tool having a polishing surface (level) with higher accuracy than a conventional polishing tool can be obtained. In particular, as a CMP pad conditioner, the surface of a semiconductor wafer can be processed with high accuracy and high efficiency.
図面の簡単な説明 Brief Description of Drawings
[0017] [図 1]本発明による研磨工具の一実施態様を示す説明図 (平面図)である。(実施例 1 ) FIG. 1 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. (Example 1)
[図 2]本発明による研磨工具の一実施態様を示す説明図 (平面図)である。(実施例 2 ) FIG. 2 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. (Example 2)
[図 3]本発明による研磨工具の一実施態様を示す説明図 (平面図)である。 FIG. 3 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
[図 4]本発明による研磨工具の一実施態様を示す説明図 (平面図)である。 FIG. 4 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
[図 5]図 4の部分拡大図である。 FIG. 5 is a partially enlarged view of FIG.
[図 6]図 1の部分拡大図である。 FIG. 6 is a partially enlarged view of FIG.
[図 7]本発明による研磨工具の研磨単位にっ ヽて、一構成例を示す説明図 (平面図) である。 FIG. 7 is an explanatory view (plan view) showing an example of the configuration of the polishing unit of the polishing tool according to the present invention.
[図 8]図 7における A— Aにおける断面を示す説明図である。 FIG. 8 is an explanatory view showing a cross section taken along line AA in FIG.
[図 9]本発明による研磨工具の研磨単位にっ 、て、別の構成例を示す説明図 (平面 図)である。 FIG. 9 is an explanatory view (plan view) showing another configuration example according to the polishing unit of the polishing tool according to the present invention.
[図 10]図 9における B—Bにおける断面を示す説明図である。 FIG. 10 is an explanatory view showing a cross section taken along line BB in FIG. 9.
[図 11]本発明による研磨工具を製造方法にぉ 、て用い得るワイヤカット放電加工の 一態様を示す説明図である。 FIG. 11 is an explanatory view showing an embodiment of wire-cut electric discharge machining that can be used in the manufacturing method of the polishing tool according to the present invention.
[図 12]本発明による研磨工具の一実施態様を示す説明図 (平面図)である。 FIG. 12 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
[図 13]本発明による研磨工具の一実施態様を示す説明図 (平面図)である。 圆 14]本発明による研磨工具の 実施態様を示す説明図 (平面図)である。 FIG. 13 is an explanatory view (plan view) showing one embodiment of a polishing tool according to the present invention. 14] An explanatory view (plan view) showing an embodiment of the polishing tool according to the present invention.
[図 15]本発明による研磨工具の 実施態様を示す説明図 (平面図)である。 FIG. 15 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
[図 16]本発明による研磨工具の 実施態様を示す説明図 (平面図)である。 FIG. 16 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention.
[図 17]本発明による研磨工具の 実施態様を示す説明図 (平面図)である。 符号の説明 FIG. 17 is an explanatory view (plan view) showing an embodiment of a polishing tool according to the present invention. Explanation of symbols
1 研磨工具 1 Polishing tool
2 研磨単位 2 Polishing unit
3 溝 3 groove
4 研磨工具 4 Abrasive tools
5 研磨単位 5 Polishing unit
6 溝 6 groove
7 研磨工具 7 Abrasive tools
8 研磨単位 8 Polishing unit
9 溝 9 groove
10 研磨部 10 Polishing part
12 第一方向平行溝群 12 First direction parallel groove group
13、 14 錐 (台)状体側面 13, 14 Conical side
16 第二方向平行溝群 16 Second direction parallel groove group
17、 18 錐体傾斜側面 17, 18 Cone inclined side
19 四角錐 (台)状研磨単位 19 Square pyramid (table) polishing unit
22 第一方向平行溝群 22 First direction parallel groove group
23、 24 三角錐傾斜面 23, 24 Triangular pyramid inclined surface
25 研磨部 25 Polishing part
27 第二平行溝群 27 Second parallel groove group
28、 29 傾斜側面 28, 29 Inclined side
31 第三方向平行溝群 31 Third direction parallel groove group
32、 33 傾斜側面 32, 33 inclined side
34 三角錐状研磨単位 放電力卩ェ用ワイヤ 研磨部 、 . 44 研磨単位 研磨部 円形基板 直線状溝群 第二溝群 外周傾斜部 研磨部 円形基板 直線状溝群 第二溝群 第三溝群 外周傾斜部 内周傾斜部 研磨部 円形基板 直線状溝群 接合部 第二溝群 研磨部 円形基板 直線状溝群 接合部 第二溝群 研磨部 円形基板 直線状溝群 95 第二溝群 34 Triangular pyramid polishing unit Wire for discharging force grinding Polishing part, .44 Polishing unit Polishing part Circular substrate Straight groove group Second groove group Peripheral inclined part Polishing part Circular substrate Linear groove group Second groove group Third groove group Peripheral inclined part Inner peripheral slope Part Polishing part Circular substrate Straight groove group Joint part Second groove group Polishing part Circular substrate Linear groove group Joint part Second groove group Polishing part Circular substrate Linear groove group 95 Second groove group
96 第三溝群 96 Third groove group
101 研磨部 101 Polishing part
102 円形基板 102 Circular substrate
103 直線状溝群 103 Linear groove group
104 接合部 104 joints
105 第二溝群 105 Second groove group
106 第三溝群 106 Third groove group
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0019] 本発明の研磨工具の材料となる超砲粒焼結体は、ダイヤモンドや c BN (立方晶 窒化硼素)等の超砲粒の粉末を常法により超高圧高温工程で処理して得られる。この 状態の焼結体は超砲粒焼結体は歪みが大きいので型放電加工などにより予備的に あらかた平坦ィ匕しておく。次いで、本発明で特定する態様にて溝及び突起側面を段 階的に形成していくことにより、研磨単位、即ち、直接研磨対象と接触する突起部分 を創生する。なお超砥粒焼結体として市販品を利用する場合は、仕様によるが、表 面が平坦ィ匕されて ヽるので、上記平坦化予備処理は省略できる。 [0019] The super-agglomerate sintered body as the material of the polishing tool of the present invention is obtained by treating super-agglomerate powder such as diamond or cBN (cubic boron nitride) in an ultra-high pressure and high-temperature process by a conventional method. It is done. Since the sintered body in this state has a large distortion, the sintered body is preliminarily flattened by die discharge machining. Next, the grooves and the side surfaces of the protrusions are formed stepwise in a manner specified by the present invention, thereby creating a polishing unit, that is, a protrusion portion that directly contacts the object to be polished. When a commercially available product is used as the superabrasive sintered body, although depending on the specification, the surface is flattened, the above-described preplanarization treatment can be omitted.
前記溝の形成にはワイヤカット放電加工や型放電加工やその他の精密放電加工、 或はレーザー加工などが利用可能である力 ワイヤカット放電力卩ェが好ましぐとりわ け、研磨単位の頂部を鋭利に尖らせる場合などに、ワイヤカット放電加工がとくに好 ましい。ワイヤカットは超砲粒焼結体表面に沿って放電加工用ワイヤを駆動し、金属 ワイヤと超砲粒焼結体材料との間の放電により、材料を除去する手法であるが、通常 プログラム運転される。 For the formation of the groove, wire cutting electric discharge machining, die electric discharge machining, other precision electric discharge machining, or laser machining can be used. Wire cutting electric discharge force is preferable, and the top of the polishing unit is preferred. Wire-cut electric discharge machining is particularly preferred when sharpening sharp edges. Wire cutting is a technique in which a wire for electric discharge machining is driven along the surface of the super-abrasive sintered body, and the material is removed by electric discharge between the metal wire and the super-encapsulated sintered body material. Is done.
[0020] 本発明の研磨工具において、上記研磨単位は、例えば、円形、または同心の中心 円形孔を有する円環状焼結体層へ研磨面区分のための複数の溝群 (以下、区分溝 群ともいう)を交差させて切り込むことにより、或は対応する形状に形成された電極面 をもつ電極を利用した型放電加工によって、創生することができる。区分溝群は、超 砥粒層表面、電極面のどちらに形成するにしても、直線状とするのが簡便である。 [0021] 上記区分溝群は様々に配置することができる。例として、超砲粒層の円形表面にお いて、外周カゝら反対側の外周まで延びた一定間隔の平行直線群を 2組、互いに直交 させて形成するもの (図 1)や、このような直線群を 3組、 60° で交差させたもの (図 2)が 挙げられる。これらの場合、それぞれ四角形または三角形の研磨単位が創生される。 また、研磨単位が頂部に直線状の稜線を呈する形状 (図 3;研磨単位が研磨部の端 力 端まで稜線を呈して 、る、図 4〜5;研磨単位の基部が長方形)などであってもよ い。研磨単位が長方形の場合、溝および隣接する研磨単位の傾斜面が、ワイヤカツ ト放電加工で形成されるので、稜線は基本的には長辺に平行に形成される。また、 四角錐状の研磨単位は、必ずしも、縦横のピッチが等しくなくてもよいが、 CMPコン ディショナ一としては、正方形が好ましい。 In the polishing tool of the present invention, the polishing unit is, for example, a plurality of groove groups (hereinafter referred to as divided groove groups) for dividing a polishing surface into an annular sintered body layer having a circular or concentric central circular hole. Can also be created by die-cutting using an electrode having an electrode surface formed in a corresponding shape. Regardless of whether the segment groove group is formed on the surface of the superabrasive layer or the electrode surface, it is easy to make it straight. [0021] The dividing groove group can be variously arranged. As an example, on the circular surface of the super-orbital layer, two sets of parallel straight line groups extending to the outer periphery on the opposite side from the outer periphery are formed perpendicular to each other (Fig. 1), and There are three pairs of straight lines intersected at 60 ° (Fig. 2). In these cases, square or triangular polishing units are created, respectively. In addition, the shape of the polishing unit has a linear ridge line at the top (FIG. 3; the polishing unit exhibits a ridge line to the end of the polishing part, FIGS. 4 to 5; the base of the polishing unit is rectangular), etc. It's okay. When the polishing unit is rectangular, the groove and the inclined surface of the adjacent polishing unit are formed by wire-cut electric discharge machining, so that the ridge line is basically formed parallel to the long side. In addition, the quadrangular pyramid-shaped polishing units do not necessarily have the same vertical and horizontal pitches, but the CMP conditioner is preferably a square.
[0022] 上記例において、各研磨単位が有効な研磨部分として機能するためには、各研磨 単位の頂部は充分に小さぐかつ隣接研磨単位同士は、充分な間隔を持って互いに 隔てられていることが必要である。研磨単位頂部の面積に関して、例として、図 1の研 磨工具 1の部分拡大説明図を図 6に模式的に示すが、例えば、研磨単位 2の基部の 面積 (X) (即ち、超砥粒層断面の面積から研磨単位の周辺の溝 3の面積を減じたも の)に対する頂部の面積 (Y)の割合は 50%以下とすることが好ましぐ特に好ましくは 、 2〜25%である。また、研磨単位の頂部の頂角は、好ましくは 30〜120° 、とくに好ま しくは 60〜90° 、さらに好ましくは 70〜80° 程度である。 [0022] In the above example, in order for each polishing unit to function as an effective polishing portion, the top of each polishing unit is sufficiently small, and adjacent polishing units are separated from each other with sufficient spacing. It is necessary. As an example regarding the area of the top of the polishing unit, FIG. 6 schematically shows a partially enlarged explanatory view of the polishing tool 1 of FIG. 1.For example, the area (X) of the base of the polishing unit 2 (that is, superabrasive grains) The ratio of the top area (Y) to the area of the layer cross section minus the area of the groove 3 around the polishing unit) is preferably 50% or less, particularly preferably 2 to 25%. . The apex angle of the top of the polishing unit is preferably 30 to 120 °, particularly preferably 60 to 90 °, and still more preferably about 70 to 80 °.
[0023] 溝の深さ(研磨単位の溝底からの高さ)は、 0.1mm以上 lmm以下、特に 0.15mm以上 0.3mm以下が適切である。溝が浅すぎると被削材の削り屑が効率的に排出されず、 研磨抵抗が過度に大きくなる傾向がある。反面深すぎると、研磨単位の強度が不足 する上、過剰な超砲粒層の厚さが必要となる。 [0023] The depth of the groove (height of the polishing unit from the groove bottom) is suitably 0.1 mm or more and lmm or less, particularly 0.15 mm or more and 0.3 mm or less. If the groove is too shallow, the shavings of the work material will not be discharged efficiently, and the polishing resistance will tend to be excessive. On the other hand, if the depth is too deep, the strength of the polishing unit will be insufficient, and an excessive super-atomized layer thickness will be required.
[0024] 研磨単位は、頂部が直線状または線分状、三角、四角またはそれ以上の多角形柱 として形成し、各側面は基板に対して垂直とし水平断面を全高に亘つて均一とするの が簡便であるが、少なくとも一つの側面、特に工具の回転方向に関して前方の側面 を軸に平行な面に対して後方に傾斜させることによって、切れ味を向上することがで きる。 [0024] The polishing unit is formed as a polygonal column with a top or a straight line, a line segment, a triangle, a square or more, and each side surface is perpendicular to the substrate, and the horizontal cross section is uniform over the entire height. However, it is possible to improve sharpness by inclining at least one side surface, particularly the front side surface with respect to the direction of rotation of the tool, backward with respect to the plane parallel to the axis.
研磨単位の形状としては、研磨単位の各側面を傾斜させて錐台状、例えば、四角 錐台状または三角錐台状とすることが好ましい。さらに頂部を尖点にした、例えば、 四角錐状または三角錐状が切れ味の点でとくに好ましい。 As the shape of the polishing unit, each side surface of the polishing unit is inclined to form a frustum, for example, a square. A frustum shape or a triangular frustum shape is preferable. Furthermore, the shape of a pyramid, for example, a quadrangular pyramid or a triangular pyramid is particularly preferable in terms of sharpness.
また、整列した角柱状や角錐状研磨単位において、長方形や三角形の 1または複 数方向の側面を専用の工具で研磨することにより、頂部の縁又は頂点を鋭利化する 、いわゆる「刃付け」を行なうと、さらに良好な切れ味が達成できる。特に、研磨単位 力 多角形柱、多角形錐台であり、頂部が多角形 (典型的には、三角形または四角 形)の場合、頂部の面の少なくとも一辺に刃付けを行なうが、研磨単位が四角錐状ま たは三角錐状の場合は、刃付けを行なわなくても十分な切れ味を達成することができ る。 Also, in aligned prismatic or pyramidal polishing units, one or more sides of a rectangle or triangle are polished with a dedicated tool to sharpen the edges or vertices of the top, so-called “blading”. If done, a better sharpness can be achieved. In particular, when the polishing unit force is a polygonal column or a polygonal frustum, and the top is a polygon (typically a triangle or a quadrangle), cutting is performed on at least one side of the top surface. In the case of a quadrangular pyramid shape or a triangular pyramid shape, sufficient sharpness can be achieved without cutting.
[0025] 本発明の研磨部は、外径が 90mm以上、超砥粒層の厚さが 0.1mm以上 lmm以下に 構成される。焼結超砥粒層としては、ダイヤモンド焼結体 (PCD)や c-BN焼結体 (Pc BN)の一方の面を超硬合金即ち炭化タングステン系複合材、或は周期律表第 6a族 金属の炭化物を主成分とする複合材のブロックで裏打ちされた構造のものを用い、 複合材側を接着剤等によって工具基板に固着し、反対側に区分溝を形成して研磨 部として使用する。 [0025] The polishing part of the present invention has an outer diameter of 90 mm or more and a superabrasive layer thickness of 0.1 mm to 1 mm. As a sintered superabrasive layer, one side of a diamond sintered body (PCD) or c-BN sintered body (Pc BN) is bonded to a cemented carbide, that is, a tungsten carbide based composite material or a group 6a of the periodic table. Use a structure backed by a composite block composed mainly of metal carbide. Adhere the composite side to the tool substrate with an adhesive, etc., and form a section groove on the opposite side to use as a polishing part. .
[0026] このような焼結体は、典型的には一軸加圧型の高温超高圧静水圧プレスで調製さ れた円板状のものが市販されている。目的とする直径の焼結体が入手できない場合 、特に厳しい平坦度が要求されない場合には、本発明の研磨工具を部分ごとに作成 し、一つの研磨工具に組み立て使用してもよい。 [0026] As such a sintered body, a disk-shaped one typically prepared by a uniaxial pressurization type high-temperature ultrahigh-pressure hydrostatic press is commercially available. When a sintered body having a desired diameter is not available, the abrasive tool of the present invention may be prepared for each part and assembled and used as a single abrasive tool when particularly severe flatness is not required.
[0027] 研磨部を複数個の分割研磨部で構成する場合、研磨部全体においてできるだけ 研磨単位が均等に整列した配置が得られるようにするために、分割研磨部の境界部 に溝を形成するのが適切である。この際、二または四分割の分割研磨部に、互いに 直交交差する 2組の平行溝群を形成し研磨単位を四角錐状または四角錐台状とす れば、外周部を除き乱れのない研磨単位の整列が得られる。一方、三または六分割 の分割研磨部の場合には、互いに 120° で交差する 3組の等間隔平行直線群を形 成し、更に三つの角錐体側面を形成して三角錐状または三角錐台状の研磨単位列 としても、同様である。 [0027] When the polishing unit is composed of a plurality of divided polishing units, grooves are formed at the boundary between the divided polishing units in order to obtain an arrangement in which the polishing units are evenly aligned as much as possible in the entire polishing unit. Is appropriate. At this time, if two groups of parallel grooves intersecting at right angles to each other are formed in the two or four divided polishing portions and the polishing unit is a quadrangular pyramid or a truncated pyramid shape, polishing without disturbance except for the outer peripheral portion. Unit alignment is obtained. On the other hand, in the case of a three- or six-part divided polishing section, three sets of equally-spaced parallel straight lines intersecting each other at 120 ° are formed, and three pyramid side surfaces are formed to form a triangular pyramid or triangular pyramid. The same applies to the trapezoidal polishing unit row.
[0028] 即ち、四角錐体の場合には、研磨部表面に沿って放電加工用のワイヤを送り、放 電によって研磨部表面にまず直線状の溝を形成する。次 、で研磨部の Z軸方向にヮ ィャを駆動し、四角錐体の側面輪郭に沿って研磨部を切断することにより、溝に隣接 した錐 (台)状体の側面を創成する。この操作を反復することにより、平行溝群を形成 する。 That is, in the case of a quadrangular pyramid, a wire for electric discharge machining is sent along the surface of the polished portion and released. First, linear grooves are formed on the surface of the polished portion by electricity. Next, by driving the shear in the Z-axis direction of the polishing portion and cutting the polishing portion along the side surface contour of the quadrangular pyramid, the side surface of the cone-shaped body adjacent to the groove is created. By repeating this operation, parallel groove groups are formed.
[0029] 本発明にお ヽて錐状体の頂部は 1または複数個のダイヤモンド粒子で構成される。 In the present invention, the top of the cone is composed of one or a plurality of diamond particles.
微細な粒子を用いてもダイヤモンドは有限の大きさを持つので、幾何学的な意味で の錐体は得られない。従って頂部の直径が底辺に比べて充分に小さいとき、これを 錐状体と呼ぶ。錐台は自明なように、頂部の各方向のサイズが錐状体に比べて大き い場合をいう。 Even with fine particles, diamond has a finite size, so a cone in the geometric sense cannot be obtained. Therefore, when the top diameter is sufficiently small compared to the bottom, this is called a cone. As is obvious, the frustum is a case where the size of each apex is larger than that of the cone.
[0030] 四角錐 (台)状研磨単位の作製においては、例えば図 7および図 8に示すように、研 磨部 10の表面に一定溝間隔 (ピッチ)で第一の方向 11の平行溝群 (その一つを代表 的に符号 12で示す。以下同様)および錐 (台)状体両側面 (一つを代表的に符号 13、 14で示す。以下同様)を形成した後、研磨部 10を固着した基板ごと円環中心軸の周 囲に 90° 回転し、同じようにして第二の方向 15の平行溝群 16を一定溝間隔で、また 各溝に隣接する錐体傾斜側面、 17、 18を形成することにより、直交する 2組の平行 溝群、および溝に沿って整列した四角錐 (台)状研磨単位 19が得られる。図 7におけ る A— Aの部分の断面図 5に示す。 In the production of the quadrangular pyramid (pedestal) -shaped polishing unit, for example, as shown in FIGS. 7 and 8, a group of parallel grooves in the first direction 11 at a constant groove interval (pitch) on the surface of the polished portion 10. (One of which is typically indicated by reference numeral 12 and so on) and conical (pedestal) -like body side surfaces (one of which is indicated by reference numerals 13 and 14 and so on). Rotate 90 ° around the center axis of the ring together with the substrate to which the substrate is fixed, and in the same manner, parallel groove groups 16 in the second direction 15 are arranged at a constant groove interval, and the cone inclined side surface adjacent to each groove, 17 18, two sets of parallel groove groups orthogonal to each other and a quadrangular pyramid-shaped polishing unit 19 aligned along the grooves are obtained. A cross-sectional view of the A—A portion in Fig. 7 is shown.
[0031] 三角錐体の場合には図 9および図 10に示すように、上記において、第一の方向 21 の平行溝群 22および溝に隣接する角錐の傾斜面 23、 24を形成後、研磨部 20を研 磨部 25中心軸の周囲に 120° 回転し、同様に一定溝間隔で第二の方向 26の平行 溝群 27、および隣接する傾斜側面 28、 29の形成をワイヤカット放電加工により行う。 操作完了後、研磨部をさらに 120° 回転し同じ操作を行うことによって、 120° で交差 する第三方向 30の平行溝群 31、および隣接する傾斜側面 32、 33、溝に沿って整 列した三角錐状研磨単位 34が得られる。 In the case of a triangular pyramid, as shown in FIGS. 9 and 10, in the above, after forming the parallel groove group 22 in the first direction 21 and the inclined surfaces 23 and 24 of the pyramid adjacent to the groove, polishing is performed. The part 20 is rotated 120 ° around the central axis of the polishing part 25. Similarly, the formation of the parallel groove group 27 in the second direction 26 and the adjacent inclined side faces 28, 29 at a constant groove interval by wire-cut electric discharge machining. Do. After the operation was completed, the polishing part was further rotated 120 ° and the same operation was performed, so that the parallel grooves 31 in the third direction 30 intersecting at 120 ° and the adjacent inclined side surfaces 32 and 33 were aligned along the grooves. Triangular pyramid polishing unit 34 is obtained.
[0032] 上記研磨単位において、錐状体または錐台状体頂部の溝底面に対する突き出し 高さは三角形、四角形共に 200 m以下 30 m以上とするのが適切である。突き出し が浅すぎると研磨部本体がパッド等のワークと直接接触し、コンディショニングが効果 的に行われない傾向となる。反面大きすぎると、研磨単位の強度が不足したり、過剰 な超砲粒層の厚さが必要となる。一方、隣接溝間の間隔 (ピッチ)は 1500 m以下、下 限は利用するワイヤカット放電カ卩ェ用のワイヤの直径による力 例えば、約 200 /z mと することができる。 [0032] In the above polishing unit, it is appropriate that the protruding height of the top of the cone or frustum to the groove bottom is 200 m or less and 30 m or more for both the triangle and the quadrangle. If the protrusion is too shallow, the polishing body itself comes into direct contact with the work such as a pad, and conditioning tends not to be performed effectively. On the other hand, if it is too large, the strength of the polishing unit will be insufficient or excessive. The thickness of the super-abrasive layer is required. On the other hand, the interval (pitch) between adjacent grooves can be 1500 m or less, and the lower limit can be a force due to the diameter of the wire for the wire-cut discharge cage to be used, for example, about 200 / zm.
[0033] 上記研磨単位の研磨性能は、錐 (台)状体の頂部に含有される超砲粒の粒度に依 存する。超砥粒がダイヤモンド粒子である場合、即ち研磨部を構成する焼結体が焼 結ダイヤモンド (PCD)層である場合、ダイヤモンド粒子の粒度 (公称粒度)としては、 40 -60 μ m以下、 8-16 μ mや 0- 2 μ mなどの各粒度の PCD層が利用できる力 8-16 μ m以下の公称粒度が好ましぐ特に 0-2 μ mが好ましい。 [0033] The polishing performance of the above-mentioned polishing unit depends on the particle size of the super-cannon contained in the top of the cone-shaped body. When the superabrasive grains are diamond particles, that is, when the sintered body constituting the polished part is a sintered diamond (PCD) layer, the diamond particle size (nominal particle size) is 40-60 μm or less, 8 Forces that PCD layers of various particle sizes such as -16 μm and 0-2 μm can be used Nominal particle size of 8-16 μm or less is preferred, and 0-2 μm is particularly preferable.
[0034] 本発明の研磨部に用い得るダイヤモンド焼結体は、ダイヤモンド粒子を、裏打ち材 としての超硬合金および、必要に応じてコノ レト等の結合材金属と共に、ダイヤモン ドが熱力学的に安定な超高圧高温条件下に供して得られる。焼結体から本発明の 研磨部への加工は精密放電加工、典型的にはワイヤカット放電加工による切り抜き、 および表面の加工による研磨単位の形成によって実現できる。ワイヤカット放電カロェ においては、一般的には、超砥粒焼結体に放電加工用ワイヤを接触させ放電し、所 望の溝幅になるようにワイヤを水平に動かし、さらに研磨単位の側面を形成するよう に動かす。 [0034] The diamond sintered body that can be used in the polishing portion of the present invention comprises diamond particles that are thermodynamically bonded together with a cemented carbide as a backing material and, if necessary, a binder metal such as a core. It is obtained by subjecting it to stable ultra-high pressure and high temperature conditions. Processing from the sintered body to the polishing portion of the present invention can be realized by precision electric discharge machining, typically cut out by wire cut electric discharge machining, and formation of a polishing unit by surface processing. In wire-cut discharge Karoe, in general, an electric discharge machining wire is brought into contact with a superabrasive sintered body and discharged, the wire is moved horizontally so as to obtain a desired groove width, and the side surface of the polishing unit is further moved. Move to form.
なお、図 11に示すように、放電力卩ェ用ワイヤ 41を超砲粒焼結体 42にあてた後、水 平に動かすことなぐ図中、矢印の方向に動かし、隣りあった研磨単位 43、 44の向き 合った両傾斜面がワイヤ 41の接面となるように溝を形成し、このレベルを基準面とし 、ここカゝら両側の側面を形成することもできる。このように溝を形成した場合、溝の底 部の形状が断面略円弧状の曲面となり、溝の底部を平面や角にした場合よりも、研 磨時の応力集中が軽減され、研磨単位の強度 (耐久性)が向上する。 In addition, as shown in FIG. 11, after the discharge force wire 41 is applied to the super-abrasive sintered body 42 and then moved horizontally, it is moved in the direction of the arrow in FIG. It is also possible to form a groove so that both inclined surfaces facing each other become the contact surface of the wire 41, and this level can be used as a reference surface to form both side surfaces. When the groove is formed in this way, the shape of the bottom of the groove is a curved surface having a substantially arc-shaped cross section, and stress concentration during polishing is reduced and the polishing unit is reduced compared to the case where the bottom of the groove is flat or square. Strength (durability) is improved.
[0035] 本発明の工具は、図 12〜図 17に例示するように幾つかの形状で作製可能である。 [0035] The tool of the present invention can be manufactured in several shapes as illustrated in FIGS.
比較的小型工具については、例えば研磨部は図 12および図 13に例示するように単 一の連続円形および円環状に作製することもできるが、本発明では図 14〜図 17に 示すように、研磨部を複数個の分割研磨部で問題なく構成することができるので、こ れらの場合は特に、外形が 95mm以上の直径の大きな円環状の研磨部も容易に得る ことができる。 [0036] 円環状構成において、半径方向の幅は 15mm以上とするのが好ましい。特に設計 上中心孔が不要な場合には、研磨部は円環状でなく (中心孔を有しない)円板状とす ることができる。また図 12および図 13に示すように、尖った縁との接触によるワークの 損傷を防止するために、円形状研磨部の場合は外周部分、円環状研磨部では外周 および内周部分に、それぞれ lmm以上 (半径方向幅)にわたつて傾斜部 58、 68およ び 69を設けることが好まし!/、。 For relatively small tools, for example, the polishing part can be made in a single continuous circle and an annular shape as illustrated in FIGS. 12 and 13, but in the present invention, as shown in FIGS. Since the polishing portion can be configured with a plurality of divided polishing portions without any problem, an annular polishing portion having a large outer diameter of 95 mm or more can be easily obtained particularly in these cases. [0036] In an annular configuration, the radial width is preferably 15 mm or more. In particular, when the central hole is not required by design, the polished portion can be a disc shape (without a central hole) instead of an annular shape. Also, as shown in Fig. 12 and Fig. 13, in order to prevent the workpiece from being damaged due to contact with the sharp edges, the outer peripheral part of the circular polishing part and the outer peripheral part and the inner peripheral part of the annular polishing part, respectively. It is preferred to provide ramps 58, 68 and 69 over lmm (radial width)! /.
[0037] 研磨部を複数の分割研磨部で構成する場合には、図 14〜図 17に例示するように [0037] When the polishing unit is composed of a plurality of divided polishing units, as illustrated in FIGS.
、隣接する二つの分割研磨部の境界部 (接合部)が溝となるように研磨単位の配置を 設定することにより、研磨部の分割構成による研磨単位配置の乱れ、およびそれに 伴うワーク (研磨パッド)への悪影響を回避または最小限に抑制することができる。この 際、研磨部の分割数と利用できる研磨単位の形状とは関連しており、二分割 (中心角 180度)または四分割 (中心角 90度)の研磨部では四角錐状 (図 14および図 15)、三分 割 (中心角 120度)の研磨部では三角錐状 (図 16および図 17)となる。 By setting the polishing unit arrangement so that the boundary part (joint part) between two adjacent divided polishing parts becomes a groove, the polishing unit arrangement is disturbed by the divided structure of the polishing part, and the workpiece (polishing pad) associated therewith ) Can be avoided or minimized. At this time, the number of divisions of the polishing part and the shape of the available polishing units are related. In Fig. 15), the tri-section (center angle 120 °) polished part has a triangular pyramid shape (Figs. 16 and 17).
[0038] 大径の研磨工具を作製するには、均一な焼結が可能な程度の小径の超砲粒焼結 体 (好ましくは、ダイヤモンド焼結体)から、所定の寸法および形状への切断および加 ェにより形成した分割研磨部を用意する。そして複数の分割研磨部を接着剤等を用 いて、各種鋼等で構成された剛性基板の平らな円板面、または円環状表面に接合 することによって、大径の円板状或は円環状 (円板の中央に同心の円形孔を有する 形状)の研磨部とすることができる。 [0038] In order to produce a large-diameter polishing tool, cutting to a predetermined size and shape from a small-diameter super-encapsulated sintered body (preferably a diamond sintered body) capable of uniform sintering. Then, a divided polishing part formed by heating is prepared. A plurality of divided polished parts are bonded to a flat disk surface or an annular surface of a rigid substrate made of various steels using an adhesive or the like, so that a large-diameter disk shape or an annular shape is joined. A polishing portion (a shape having a concentric circular hole in the center of the disk) can be obtained.
分割研磨部については、中心角が 60、 90、 120、 180° の扇形をそれぞれ 6個、 4個 、 3個、または 2個を半径上で互いに隣接させ並べて置くこと (側面接触配置)により用 いるが、 60° のものについては同じ形状を 2個用いる代わりに 120° のもの 1個で代用 することができる。この場合 120° のものは 2個を、中心に関して点対称に配置する。 For the division polishing part, use 6, 4, 3, or 2 fan sections with a central angle of 60, 90, 120, 180 ° adjacent to each other on the radius side by side (side contact arrangement) However, instead of using two of the same shape for the 60 ° one, one 120 ° one can be substituted. In this case, two 120 ° ones are arranged symmetrically with respect to the center.
[0039] 各研磨部 51、 61、 71、 81、 91、 101は、超硬合金側を円形基板 52、 62、 72、 82 、 92、 102の平らな円形面と接合し、全体的に円形または環状の研磨部を呈するよう にする。 [0039] Each polishing part 51, 61, 71, 81, 91, 101 joins the cemented carbide side to the flat circular surface of the circular substrate 52, 62, 72, 82, 92, 102, and is generally circular. Or make it present an annular polished part.
[0040] 基板に接合された超砥粒焼結体は、次 、でワイヤカット放電加工に供し、ワイヤ力 ット放電加工用ワイヤと超砲粒焼結体との間の放電工程により、超砲粒焼結体表面 に一定間隔で平行な一組の直線状溝群 53、 63、 73、 83、 93、 103を形成する。こ の時、ワイヤは基板面または基板底面に対して平行に駆動し、予備的に平坦化され た表面から焼結体層(典型的には、焼結ダイヤモンド (PCD)層)内に入り込み、焼結 体層内を、或は焼結体層が薄い場合には更に超硬合金層まで彫り下げる。 [0040] The superabrasive sintered body bonded to the substrate is then subjected to wire-cut electric discharge machining in the following manner, and the superabrasive sintered body is subjected to an electric discharge process between the wire-force electric discharge machining wire and the superabrasive sintered body. Surface of sintered powder A set of linear groove groups 53, 63, 73, 83, 93, 103 which are parallel to each other at regular intervals are formed. At this time, the wire is driven parallel to the substrate surface or the substrate bottom surface and enters the sintered body layer (typically a sintered diamond (PCD) layer) from a pre-planarized surface. The sintered body layer is further carved into a cemented carbide layer if the sintered body layer is thin.
[0041] この際、ワイヤを超砲粒焼結体の厚さ方向(Z軸方向)に駆動して切り込み、溝を作 製する。一つの溝群における最初の溝形成は、 360° の連続円形または環状面では 三角錐状体および四角錐状体のどちらの場合でも任意の位置力 開始することがで きるが、研磨部が複数の分割研磨部の組み合わせ力 なる場合は、必ず、分割研磨 部の接合部 54、 64、 74、 84、 94、 104、には溝を設け、次いでその両側に、一定ピ ツチで、全面にわたって平行に形成していく。 [0041] At this time, the wire is driven and cut in the thickness direction (Z-axis direction) of the super-orbital sintered body to form a groove. The first groove formation in one groove group can be started at any position force in either a triangular pyramid or a quadrangular pyramid on a 360 ° continuous circular or annular surface. If this is the case, the joints 54, 64, 74, 84, 94, and 104 of the divided polishing part are always provided with grooves, and then on both sides, with a constant pitch and parallel to the entire surface. To form.
[0042] 超砥粒焼結体の表面に一つの方向の平行溝群が形成されたら、次いで、該超砥 粒焼結体を基板と共に基板の中心軸の周囲に溝群交差角度 OCだけ回転して、同様 に上記一定間隔で第二の直線状平行溝群 55、 65、 75、 85、 95、 105および各溝 に隣接する傾斜側面を形成する。ここで αは、 180° および 90° の扇形については 9 0° であり、研磨単位は四角錐状または錐台状を呈する。一方 120° および 60° の扇 形については 60ほたは 120)° だけ回転して、同様に上記一定間隔で第二の直線状 平行溝群、および各溝に隣接する傾斜側面を形成したあと、更にもう 60ほたは 120) ° (最初の溝群に対して 240° )回転して第三の直線状平行溝群 56、 66、 76、 86、 9 6、 106および各溝に隣接する傾斜側面を形成する。連続円形および環状素材につ いては、 αは 90° および 60° のどちらも採りうる。 [0042] When parallel groove groups in one direction are formed on the surface of the superabrasive sintered body, the superabrasive sintered body is then rotated together with the substrate around the central axis of the substrate by the groove group crossing angle OC. Similarly, the second linear parallel groove group 55, 65, 75, 85, 95, 105 and the inclined side surface adjacent to each groove are formed at the above-mentioned fixed intervals. Here, α is 90 ° for 180 ° and 90 ° fan shapes, and the polishing unit has a quadrangular pyramid shape or frustum shape. On the other hand, for the 120 ° and 60 ° sectors, after rotating by 60 or 120) °, the second linear parallel groove group and the inclined side surface adjacent to each groove are formed at the same regular intervals. And another 60 or 120) ° (240 ° with respect to the first groove group) and adjacent to the third linear parallel groove group 56, 66, 76, 86, 96, 106 and each groove. An inclined side surface is formed. For continuous circular and annular materials, α can be either 90 ° or 60 °.
[0043] 上記ワイヤカット放電操作において、放電用ワイヤを該基板底面力も厚さ方向に等 しく隔たった高さ (レベル)において駆動することにより上記溝群および三角または四 角錐状または錐台状体の頂部を基板底面に対して平行なレベル上に形成すること ができる。 [0043] In the wire cut discharge operation, the groove and the triangular or quadrangular pyramid or frustum-like body are obtained by driving the discharge wire at a height (level) in which the substrate bottom surface force is equally spaced in the thickness direction. Can be formed on a level parallel to the bottom surface of the substrate.
[0044] 本発明にお ヽて、研磨単位の三角錐または四角錐は必ずしも全体が超砥粒焼結 体で構成されている必要はなぐ少なくとも錐 (台)状体の頂点を含む 60 m程度の部 分 (高さ)が超砲粒焼結体であれば、それより下方部分が超硬合金であっても利用可 能である。次に、本発明を実施例により具体的に説明する。 [実施例 1] [0044] In the present invention, the triangular pyramid or the quadrangular pyramid of the polishing unit does not necessarily need to be entirely composed of a superabrasive sintered body, and at least about 60 m including the apex of the cone-shaped body. If this part (height) is a super-abrasive sintered body, it can be used even if the lower part is a cemented carbide. Next, the present invention will be specifically described with reference to examples. [Example 1]
[0045] 図 1に概略示した構造の研磨工具 1を作成した。厚さ 0.6mmの焼結ダイヤモンド層 が超硬合金に同時焼結によって一体化されて 、る、直径 90mmの PCDブロックをェ 具素材として用いた。 [0045] A polishing tool 1 having a structure schematically shown in FIG. 1 was prepared. A PCD block with a diameter of 90 mm was used as a tool material, in which a sintered diamond layer with a thickness of 0.6 mm was integrated with cemented carbide by simultaneous sintering.
上記 PCDブロックにお!/、て焼結ダイヤモンド層の表面を放電カ卩ェ (EDM)により平 坦化し、ワイヤカット放電カ卩ェにより一辺が 260 mの正方形の頂部を持つ研磨単位 2を、幅 560 mの平行な直線状の溝 3を刻み込むことによって形成した。この場合、 研磨単位 2の頂部(図示せず)の面積は、周辺部 (溝 3の部分)を除く超砲粒焼結層 断面積の約 10%に当る。 In the above PCD block, the surface of the sintered diamond layer is flattened by an electric discharge cage (EDM), and a polishing unit 2 having a square top of 260 m on one side is obtained by a wire cut electric discharge cage. It was formed by engraving parallel linear grooves 3 having a width of 560 m. In this case, the area of the top portion (not shown) of the polishing unit 2 corresponds to about 10% of the cross-sectional area of the super-abrasive sintered layer excluding the peripheral portion (the groove 3 portion).
頂部の縁には刃付けを行い、 CMPコンディショナーとして利用した。 The top edge was edged and used as a CMP conditioner.
[実施例 2] [Example 2]
[0046] 図 2に概略示す円環状の研磨工具 4を作成した。厚さ 0.6mmの焼結 c BN層が超 硬合金に同時焼結によって一体ィ匕されている PcBNブロックから、ワイヤカット放電カロ ェで、外方半径 60mm、内方半径 24mmの 90度の扇型を 4個切り出し、工具素材とした 上記扇型を SUS系ステンレス鋼製の基板に貼着、組み合わせて完全な円形とした。 焼結ダイヤモンド層の表面を研磨して平坦ィ匕し、ワイヤカット放電加工により一辺が 3 50 μ mの正三角形の頂部を持つ研磨単位 5を、幅 560 μ mの平行な直線状の溝 6の 群で形成した。この場合、研磨単位頂部の面積は、超砥粒焼結層全体の 7%となる。 得られた工具は実施例 1と同様の操作により刃付けを行い、シリコンウェハの表面 の研磨に利用した。 An annular polishing tool 4 schematically shown in FIG. 2 was produced. 0.6mm thick sintered c BN layer is integrally formed with cemented carbide by simultaneous sintering. From a PcBN block, wire cut discharge calorie, 90 ° fan with 60mm outer radius and 24mm inner radius. 4 molds were cut out and used as a tool material The above fan mold was attached to a SUS stainless steel substrate and combined into a complete circle. The surface of the sintered diamond layer is polished and flattened, and by wire-cut electric discharge machining, a polishing unit 5 having an apex of an equilateral triangle with a side of 350 μm is formed into a parallel straight groove 6 with a width of 560 μm. Formed in groups. In this case, the area of the top of the polishing unit is 7% of the entire superabrasive sintered layer. The obtained tool was bladed by the same operation as in Example 1 and used for polishing the surface of the silicon wafer.
[実施例 3] [Example 3]
[0047] 図 12に概略示した構造の研磨工具を作成した。公称粒度 40-60 μ mのダイヤモン ド粒子力 成る厚さ 0.5mmの PCD層が超硬合金 (WC— 8%Co)に同時焼結によって 一体化された、直径 100mmのダイヤモンド焼結体を研磨部として用い、直径 108mm の、 SUS316ステンレス鋼製円形基板に、エポキシ系接着剤で固着した。 A polishing tool having the structure schematically shown in FIG. 12 was prepared. Polished diamond sintered body with a diameter of 100 mm, with a diamond particle force of nominal particle size of 40-60 μm and a 0.5 mm thick PCD layer integrated with cemented carbide (WC—8% Co) by simultaneous sintering This was used as a part and fixed to an SUS316 stainless steel circular substrate having a diameter of 108 mm with an epoxy adhesive.
次いで PCD層の表面を型放電カ卩ェにより平坦ィ匕した後ワイヤカット放電カ卩ェにより PCD層に切り込み、素材の中心を通る幅 200 mの直線溝を形成した。更にワイヤを 側方へ駆動し、また基板に対して隔たる方向 (z方向)へ移動させ、必要な幅の溝の 形成および錐状体の側面を切り出しを行った。 Next, the surface of the PCD layer was flattened with a mold discharge cage and then cut into the PCD layer with a wire cut discharge cage to form a straight groove having a width of 200 m passing through the center of the material. Further wires Driving to the side and moving in a direction away from the substrate (z direction), a groove having a necessary width was formed and the side surface of the cone was cut out.
この操作の反復により、溝間隔 800 mの平行溝群、および頂角 90° の屋根状突起 を素材面全体に形成した。 By repeating this operation, parallel groove groups with a groove interval of 800 m and roof-like protrusions with an apex angle of 90 ° were formed on the entire material surface.
次に、全体を中心軸の周囲に 90° 回転させた後、同一の条件でワイヤカット放電加 ェを行うことにより、上記の溝群と直交する第二の直線溝群を形成し、かつ同時に直 交方向の錐状体側面の切り出しを行い、高さ 200 mの図 7および 8に示すような四 角錐状体群を形成した。 Next, after rotating the whole around the central axis by 90 °, wire cutting discharge is performed under the same conditions to form a second linear groove group orthogonal to the above groove group, and at the same time The sides of the cones in the orthogonal direction were cut out to form a group of quadrangular pyramids as shown in Figs. 7 and 8 with a height of 200 m.
[実施例 4] [Example 4]
[0048] 公称粒度 0-2 μ mのダイヤモンド粒子から成る厚さ 0.5mmの PCD層が超硬合金に 一体化された、外径 100mm、内径 70mmのダイヤモンド焼結体を研磨部として用い、 実施例 3の操作を繰り返し、四角錐状の研磨単位を有する研磨工具を作製した。 まず、平坦ィ匕した PCD層の表面をワイヤカット放電力卩ェ、素材の中心を通る幅 140 μ mの直線溝を形成した。更にワイヤの操作により必要な溝幅の拡張および錐状体 の側面の切り出しを行った。これを繰り返すことにより、溝間隔 200 mの平行溝群、 および頂角 60° の屋根状突起を素材面全体に形成した。 [0048] Using a diamond sintered body with an outer diameter of 100 mm and an inner diameter of 70 mm as a polishing part, in which a 0.5 mm thick PCD layer composed of diamond particles with a nominal particle size of 0-2 μm is integrated with cemented carbide The operation of Example 3 was repeated to produce a polishing tool having a quadrangular pyramid-shaped polishing unit. First, the surface of the flat PCD layer was wire-cut discharge force, and a straight groove with a width of 140 μm passing through the center of the material was formed. Furthermore, the necessary groove width was expanded and the side surfaces of the cones were cut out by manipulating the wires. By repeating this, a group of parallel grooves with a groove interval of 200 m and a roof-like protrusion with an apex angle of 60 ° were formed on the entire material surface.
次に、全体を中心軸の周囲に 90° 回転させた後、同一の条件でワイヤカット放電加 ェを行うことにより第二の直線溝群を形成し、かつ同時に第二の錐状体側面の切り 出しを行い、高さ 200 mの四角錐状体群を形成した。 Next, after rotating the whole 90 ° around the central axis, the second straight groove group is formed by performing wire cut discharge heating under the same conditions, and at the same time, the side surface of the second conical body is formed. Cut out to form a group of quadrangular pyramids with a height of 200 m.
[実施例 5] [Example 5]
[0049] 以下に示す各様の分割研磨部を用いて、それぞれの構成の工具を作製した。ダイ ャモンド焼結体のダイヤモンドはいずれも公称粒度 20- 30 mである。ワイヤカット操 作は、三角錐状研磨単位の場合、工具素材を 60° ずつ 2回回転する点において、 9 0° の回転を 1回だけ行う四角錐状研磨単位と異なる点を除き、本質的に異ならない 。操作条件および結果は次表のとおりである。 [0049] Tools having the respective configurations were produced using the following various types of divided polishing portions. All diamond diamonds have a nominal grain size of 20-30 m. The wire-cut operation is essentially the same for triangular pyramid polishing units, except that the tool material is rotated twice by 60 °, differing from a square pyramid polishing unit that rotates 90 ° only once. Not different. The operating conditions and results are shown in the following table.
[0050] [表 1] 研磨体 研磨単位[0050] [Table 1] Polishing body Polishing unit
No. 溝間隔 No. Groove spacing
外方半径 内方半径 Outer radius Inner radius
形状 (頂点間隔 形状 i¾ m Shape (Vertex spacing Shape i¾ m
m m ΠΊ ΠΊ tl m m m ΠΊ ΠΊ tl m
1 1 80° 扇形 120 60 600 四角錐 80 1 1 80 ° Fan 120 60 600 Square pyramid 80
2 1 20° 扇形 120 60 400 三角錐 682 1 20 ° Fan 120 60 400 Triangular pyramid 68
3 90° 扇形 120 60 1200 四角錐 1603 90 ° Fan 120 60 1200 Square pyramid 160
4 6CT 扇形 120 30 1000 三角錐 1384 6CT Fan 120 30 1000 Triangular pyramid 138
、頂 ώ間隔は、 2, 4の三角錐状体の場合 , The apex interval is 2 or 4 triangular pyramid
[0051] 得られた工具はいずれも CMPパッドコンディショナーとして利用し、良好な性能が 得られた。 [0051] All of the obtained tools were used as CMP pad conditioners, and good performance was obtained.
産業上の利用可能性 Industrial applicability
[0052] 本発明の研磨工具は、各種研磨工具として用いることができるが、とくに円板型回 転型研磨工具として好適に用いることができる。用途としては、 CMPパッドコンデイシ ョナ一として用いるのにとくに適しており、さらに半導体ウェハ等の表面の直接研磨す るのにも適している。これらの他、各種被削材の高精度の研磨加工にも適用できる。 [0052] The polishing tool of the present invention can be used as various types of polishing tools, but can be particularly suitably used as a disk-type rotary polishing tool. As an application, it is particularly suitable for use as a CMP pad conditioner, and is also suitable for directly polishing the surface of a semiconductor wafer or the like. In addition to these, it can be applied to high-precision polishing of various work materials.
Claims
Priority Applications (9)
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|---|---|---|---|
| BRPI0615020-9A BRPI0615020A2 (en) | 2005-08-25 | 2006-08-25 | tool with sintered body polishing surface and manufacturing method |
| KR1020087005076A KR101293461B1 (en) | 2005-08-25 | 2006-08-25 | Tool with sintered body polishing surface and method of manufacturing the same |
| JP2007532202A JP5033630B2 (en) | 2005-08-25 | 2006-08-25 | Tool having sintered body polishing portion and method for manufacturing the same |
| CA002620407A CA2620407A1 (en) | 2005-08-25 | 2006-08-25 | Tool with sintered body polishing surface and method of manufacturing the same |
| EP06796810A EP1944125B1 (en) | 2005-08-25 | 2006-08-25 | Tool with sintered body polishing surface and method of manufacturing the same |
| AU2006282293A AU2006282293B2 (en) | 2005-08-25 | 2006-08-25 | Tool with sintered body polishing surface and method of manufacturing the same |
| US11/990,562 US20090215366A1 (en) | 2005-08-25 | 2006-08-25 | Tool with Sintered Body Polishing Surface and Method of Manufacturing the Same |
| CN2006800307352A CN101247923B (en) | 2005-08-25 | 2006-08-25 | Abrasive tool, method of manufacturing the same, and method of remanufacturing the same |
| IL189314A IL189314A (en) | 2005-08-25 | 2008-02-05 | Tool with sintered body polishing surface and method of manufacturing the same |
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| PCT/JP2006/316737 Ceased WO2007023949A1 (en) | 2005-08-25 | 2006-08-25 | Tool with sintered body polishing surface and method of manufacturing the same |
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| US (1) | US20090215366A1 (en) |
| EP (1) | EP1944125B1 (en) |
| JP (1) | JP5033630B2 (en) |
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- 2006-08-25 BR BRPI0615020-9A patent/BRPI0615020A2/en not_active IP Right Cessation
- 2006-08-25 CN CN200910170789A patent/CN101693353A/en active Pending
- 2006-08-25 WO PCT/JP2006/316737 patent/WO2007023949A1/en not_active Ceased
- 2006-08-25 RU RU2008110905/02A patent/RU2430827C2/en not_active IP Right Cessation
- 2006-08-25 TW TW095131436A patent/TWI406736B/en not_active IP Right Cessation
- 2006-08-25 KR KR1020087005076A patent/KR101293461B1/en not_active Expired - Fee Related
- 2006-08-25 EP EP06796810A patent/EP1944125B1/en not_active Not-in-force
- 2006-08-25 CN CN2006800307352A patent/CN101247923B/en not_active Expired - Fee Related
- 2006-08-25 US US11/990,562 patent/US20090215366A1/en not_active Abandoned
- 2006-08-25 AU AU2006282293A patent/AU2006282293B2/en not_active Ceased
- 2006-08-25 CA CA002620407A patent/CA2620407A1/en not_active Abandoned
- 2006-08-25 JP JP2007532202A patent/JP5033630B2/en not_active Expired - Fee Related
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2008
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009113133A (en) * | 2007-11-05 | 2009-05-28 | Hiroshi Ishizuka | Cmp-pad conditioner |
| JP2016196085A (en) * | 2013-08-26 | 2016-11-24 | 株式会社東京精密 | Processing wheel |
| JP2020519468A (en) * | 2017-05-12 | 2020-07-02 | スリーエム イノベイティブ プロパティズ カンパニー | Tetrahedral abrasive particles in abrasive articles |
| JP2023058705A (en) * | 2017-05-12 | 2023-04-25 | スリーエム イノベイティブ プロパティズ カンパニー | Tetrahedral abrasive particles in abrasive articles |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2620407A1 (en) | 2007-03-01 |
| KR20080037693A (en) | 2008-04-30 |
| EP1944125A1 (en) | 2008-07-16 |
| IL189314A (en) | 2013-01-31 |
| RU2430827C2 (en) | 2011-10-10 |
| TW200714416A (en) | 2007-04-16 |
| EP1944125A4 (en) | 2009-12-16 |
| AU2006282293B2 (en) | 2011-06-23 |
| KR101293461B1 (en) | 2013-08-07 |
| CN101247923A (en) | 2008-08-20 |
| US20090215366A1 (en) | 2009-08-27 |
| BRPI0615020A2 (en) | 2009-08-04 |
| TWI406736B (en) | 2013-09-01 |
| AU2006282293A1 (en) | 2007-03-01 |
| CN101693353A (en) | 2010-04-14 |
| CN101247923B (en) | 2010-12-08 |
| JPWO2007023949A1 (en) | 2009-03-05 |
| IL189314A0 (en) | 2008-06-05 |
| RU2008110905A (en) | 2009-09-27 |
| EP1944125B1 (en) | 2012-01-25 |
| JP5033630B2 (en) | 2012-09-26 |
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