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WO2007009889A1 - Materiaux ameliores pour isolants dans des transistors a effet de champ organiques - Google Patents

Materiaux ameliores pour isolants dans des transistors a effet de champ organiques Download PDF

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Publication number
WO2007009889A1
WO2007009889A1 PCT/EP2006/063966 EP2006063966W WO2007009889A1 WO 2007009889 A1 WO2007009889 A1 WO 2007009889A1 EP 2006063966 W EP2006063966 W EP 2006063966W WO 2007009889 A1 WO2007009889 A1 WO 2007009889A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate insulator
insulator material
field effect
organic field
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2006/063966
Other languages
German (de)
English (en)
Inventor
Christoph Brabec
Christoph Waldauf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2007009889A1 publication Critical patent/WO2007009889A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the application relates to the field of organic field effect transistors.
  • the demands on the gate insulator material for bottom-gate field-effect transistors are particularly high. These are commonly used in contacting base metals, but are usually so sensitive to oxidation and also unstable on contact with air and / or water, so that the usual gate insulator materials can not be used to a bottom gate field effect transistor of an acceptable quality to reach.
  • a gate insulator material is provided by a material according to claim 1 of the present invention. Accordingly, a gate insulator material according to the invention is for an organic field effect transistor, characterized in that the gate insulator material is photochemically curable and / or structurable.
  • An advantage of the present invention is that the gate insulator layer can be easily obtained by applying the gate insulator material, e.g. by printing, spinning, spraying or processes for the application of liquid materials and subsequent curing by means of a photoreaction thereof.
  • the gate insulator material contains the following components:
  • a photoinitiator preferably in the form of a triarylsulfonium salt
  • Such a mixture has proven to be a particularly advantageous gate insulator material.
  • Suitable photoinitiators are in principle all materials used in the prior art. Triarylsulfonium salts, however, have proven to be particularly suitable. Both unsubstituted and substituted, preferably halogen- or alkyl-substituted, trialkylsulfon may be used here. niumsalze be used. A preferred counterion is hexafluoroantimonate.
  • the solubility of the gate insulator material in wt .-% in water is> 20 to ⁇ 65%. Such high solubility is preferred to achieve better processability.
  • the solubility of the gate insulator material in wt .-% in water > 25 to ⁇ 60%, more preferably> 30 to ⁇ 50%.
  • the specific density of the gate insulator material is - before processing - in g / ml ⁇ l .1 to ⁇ l .3.
  • a specific gravity has been found to be particularly suitable for producing gate insulator layers having the desired properties.
  • the volatiles of the gate insulator material - before processing - in wt .-% > 20 to ⁇ 65%.
  • the volatiles of the gate insulator material - before processing - in wt .-% > 25 to ⁇ 40%, more preferably> 30 to ⁇ 35%.
  • the volatile organic constituents of the gate insulator material before processing in g / L are> 300 to ⁇ 700. It has been found to be beneficial to keep the volatile organic compounds within these limits to achieve a gate insulator layer with good film-forming properties.
  • the volatile organic constituents of the gate insulator material preferably amount to> 350 to ⁇ 500 before processing in g / L.
  • the invention further relates to an organic field-effect transistor, comprising a gate insulator layer, which contains, as an essential component, a gate insulator material as already described or constructed from this.
  • essential component is meant that the gate insulator layer is> 90%, preferably> 95%, and most preferably> 98% to ⁇ 100% of the gate insulator material or made thereof.
  • the dielectric constant of the gate insulator layer is> 2 to ⁇ IO.
  • Such a dielectric constant has the advantage that an effective control of the field-effect transistor is possible even with a small field.
  • the thickness of the gate insulator layer is between> 0.2 and ⁇ 10 ⁇ m.
  • Such thin layers have the advantage that much more compact and smaller transistors can be built.
  • the thickness of the gate insulator layer is preferably between> 0.3 and ⁇ 5 ⁇ m, more preferably> 0.4 and ⁇ 2 ⁇ m.
  • the organic field effect transistor is a bottom gate organic field effect transistor. It has been found that the gate insulator material according to the invention is particularly advantageous in bottom-gate organic field-effect transistors.
  • the invention also relates to a method for constructing an organic field-effect transistor as described above, comprising the steps: applying a gate electrode to a substrate
  • a gate insulator layer can be constructed in a simple manner by applying the gate insulator material and then curing it by means of a photoreaction. Subsequently, access to the gate electrode can take place by means of photostructuring of the gate electrode.
  • Fig.l is a perspective - very schematic - representation of an organic field effect transistor in a bottom-gate structure according to an embodiment of the present invention
  • Fig.2 a - very schematic - fragmentary
  • FIG. 1 shows an organic field-effect transistor 1 in a binary-gate structure according to an embodiment of the present invention.
  • FIG. 2 shows the same transistor in a sectional view. It should be noted that most structures of the transistor are prior art in themselves; however, all structures and materials known in the art of organic field effect transistors can be used in the present invention.
  • the transistor 1 consists of a substrate 50 on which the further structures are applied.
  • the substrate 50 is made of glass or a suitable film, such as PET.
  • the transistor has a gate electrode 40, which may consist of gold or a suitable oxide such as ITO (indium-tin mixed oxide).
  • the gate electrode 40 is surrounded by the gate insulator layer 30 according to the invention, which is constructed as described above. In the gate insulator layer 30, an access 70 to the gate electrode 40 is provided, which was preferably created by etching the insulator material.
  • Fig. 1 the gate electrode 40 is drawn for a better understanding of the transistor, although it is in fact below the insulator material 30. The exact conditions are better seen in Fig. 2. However, the two figures are purely schematic and the proportions between the individual structures are in truth depending on
  • a semiconductor layer 10 On the gate insulator layer 30 is a semiconductor layer 10. This is preferably made of an organic material which has been applied by spin coating. This semiconductor layer 10 is contacted by two electrodes, the drain electrode 20 and the source electrode 60.
  • the gate electrode 40 acts as the base of the transistor 1.
  • the semiconductor layer 10, the gate insulator layer 30, and the gate electrode 40 act as a type of capacitor that conducts current Drain 20 and source 60 causes, whereby the transistor 1 can be controlled.
  • the gate insulator layer is as thin as possible on the one hand and on the other hand has a particularly high dielectric constant. It has been found that a thickness of> 0.2 and ⁇ 10 ⁇ m and a dielectric constant of> 2 to ⁇ IO are particularly advantageous.

Landscapes

  • Thin Film Transistor (AREA)

Abstract

L'invention a trait au domaine des transistors à effet de champ organiques. L'invention concerne en particulier un transistor à effet de champ organique. Le matériau choisi pour la couche d'isolant de grille du transistor est un matériau qui peut être durci et/ou texturé photochimiquement, ce qui permet d'améliorer la qualité de la couche d'isolant de grille et de simplifier le procédé de production du transistor.
PCT/EP2006/063966 2005-07-22 2006-07-06 Materiaux ameliores pour isolants dans des transistors a effet de champ organiques Ceased WO2007009889A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005034415.1 2005-07-22
DE102005034415 2005-07-22

Publications (1)

Publication Number Publication Date
WO2007009889A1 true WO2007009889A1 (fr) 2007-01-25

Family

ID=36763244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/063966 Ceased WO2007009889A1 (fr) 2005-07-22 2006-07-06 Materiaux ameliores pour isolants dans des transistors a effet de champ organiques

Country Status (1)

Country Link
WO (1) WO2007009889A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761817B2 (en) 2015-03-13 2017-09-12 Corning Incorporated Photo-patternable gate dielectrics for OFET

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0889361A1 (fr) * 1997-06-30 1999-01-07 Siemens Aktiengesellschaft Initiateurs pour la polymerisation cationique
WO2001033649A1 (fr) * 1999-11-02 2001-05-10 Koninklijke Philips Electronics N.V. Procede permettant de produire des interconnexions verticales entre des dispositifs micro-electroniques a film mince, et produits comprenant ces interconnexions verticales
DE10340608A1 (de) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0889361A1 (fr) * 1997-06-30 1999-01-07 Siemens Aktiengesellschaft Initiateurs pour la polymerisation cationique
WO2001033649A1 (fr) * 1999-11-02 2001-05-10 Koninklijke Philips Electronics N.V. Procede permettant de produire des interconnexions verticales entre des dispositifs micro-electroniques a film mince, et produits comprenant ces interconnexions verticales
DE10340608A1 (de) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
FIX W ET AL: "Fast polymer integrated circuits", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 81, no. 9, 26 August 2002 (2002-08-26), pages 1735 - 1737, XP012033403, ISSN: 0003-6951 *
GONG GU ET AL: "An organic thin-film transistor with photolithographically patterned top contacts and active layer", DEVICE RESEARCH CONFERENCE, 2004. 62ND DRC. CONFERENCE DIGEST [LATE NEWS PAPERS VOLUME INCLUDED] NOTRE DAME, IN, USA JUNE 21-23, 2004, PISCATAWAY, NJ, USA,IEEE, 21 June 2004 (2004-06-21), pages 83 - 84, XP010748144, ISBN: 0-7803-8284-6 *
KLAUK H ET AL: "Flexible organic complementary circuits", IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE USA, vol. 52, no. 4, April 2005 (2005-04-01), pages 618 - 622, XP008067678, ISSN: 0018-9383 *
LIANG YAN ET AL: "Fabrication of pentacene thin-film transistors with patterned polyimide photoresist as gate dielectrics and research of their degradation", CHINESE PHYSICS LETTERS CHINESE PHYS. SOC CHINA, vol. 21, no. 11, November 2004 (2004-11-01), pages 2278 - 2280, XP002394573, ISSN: 0256-307X *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761817B2 (en) 2015-03-13 2017-09-12 Corning Incorporated Photo-patternable gate dielectrics for OFET
US10186673B2 (en) 2015-03-13 2019-01-22 Corning Incorporated Photo-patternable gate dielectrics for OFET
US10680192B2 (en) 2015-03-13 2020-06-09 Corning Incorporated Photo-patternable gate dielectrics for OFET

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