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WO2007009326A1 - Réseau de fil quantique autoassembleur et bistable de nano médicament et sa méthode de préparation - Google Patents

Réseau de fil quantique autoassembleur et bistable de nano médicament et sa méthode de préparation Download PDF

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Publication number
WO2007009326A1
WO2007009326A1 PCT/CN2006/000107 CN2006000107W WO2007009326A1 WO 2007009326 A1 WO2007009326 A1 WO 2007009326A1 CN 2006000107 W CN2006000107 W CN 2006000107W WO 2007009326 A1 WO2007009326 A1 WO 2007009326A1
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Prior art keywords
self
zeptom
quantum wire
assembled
bistable
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Chinese (zh)
Inventor
Yan Fang
Rong Wu
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Zhongshan Hospital Fudan University
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Zhongshan Hospital Fudan University
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Publication of WO2007009326A1 publication Critical patent/WO2007009326A1/fr
Priority to US12/008,904 priority Critical patent/US8574570B2/en
Anticipated expiration legal-status Critical
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y5/00—Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
    • A61B2562/02—Details of sensors specially adapted for in-vivo measurements
    • A61B2562/0285—Nanoscale sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/761—Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes

Definitions

  • the invention relates to the field of artificial polymer molecular weight sub-information materials, in particular to a nano drug self-assembled bistable quantum wire array and a preparation method thereof. Background technique
  • Quantum wires are the core of the development of quantum computing and ultra-fast or hypersensitive diagnostic techniques and nano-biosensing. Quantum bits are currently the focus of information materials research. The development of biomolecules as information materials to construct components is a hot topic in modern and long-term research at home and abroad. Studies have shown that isobromidine, isoproterenol, superoxide dismutase and adenosine triphosphate are a group of drug-molecular networks with nanoscale size, charge transport and target recognition capabilities, but have not been seen at the single molecule level, nanomedicine Report on bistable quantum wire arrays and their preparation methods. Summary of the invention
  • the present invention employs a non-elastic electron tunneling interaction self-assembling antioxidant enzyme-like oxygen radical antagonist, ⁇
  • a receptor agonist a ⁇ 2 receptor agonist, a phenylalkylamine calcium antagonist monomer and/or a nucleic acid, and binary, ternary, quaternary and pentad complexes thereof, having a quantum bit, a Kondo effect Bistable quantum wire array.
  • the nano drug self-assembled bistable quantum wire array component is: isoproterenol, adenine triphosphate, verapamil, superoxide dismutase and jaundice And its optimized matching geometry.
  • the optimal drug concentration range for the above components is:
  • Isoprofen (Verapamil) 20 zeptoM to 0. 001 zeptoM, isoproterenol (Isopronolini) 210 zeptoM to 0. 001 zeptoM, superoxide dismutase 1 zeptoM to 0. 001 zeptoM, three pity Adenosine triphophate 260 zeptoM to 1 zeptoM, Xanthine 50 uM to 5 mM.
  • the present invention utilizes inelastic electron tunneling interactions to self-assemble isobolidine, isoproterenol, superoxide dismutase, and/or adenosine triphosphate and xanthine, and its two to pentamer nano drug bistable quantum wires Array.
  • This optimized molecular design and self-assembly method based on spatial geometry is not only beneficial to the discovery of innovative drugs, but also beneficial to the study of quantum information materials.
  • the outstanding advantage of the present invention is the nanomedicine-based quantum bit performance, which is expressed by the current-voltage curve and its first derivative, electron spin, time-phase-energy spectrum, and frequency-phase-energy spectrum; quantum bit performance
  • the feature recognition is obtained from the time-phase-energy spectrum and the frequency-phase-energy spectrum of the nanomedicine quantum wire, that is, the phase undergoes an electron spin process of thousands to hundreds or tens of degrees 90 degrees to 180 degrees, in one
  • the spin can be as high as 906 90 degrees and 302 180 degree electron spins in a thousand microseconds.
  • the present invention employs L16(2)15 and L9(3)4 orthogonal preferred designs, PCI scanning probe microscopy and _4 °C low temperature self-assembly and 0RINGIN operation interaction to obtain quantum wire arrays.
  • the core component of the present invention consists of isoproline (Isoprenalini), adenosine triphosphate, verapamil, superoxide disase (Tase) and xanthine, by monomer, binary
  • the ternary, quaternary and pentad bodies are respectively prepared into self-assembly systems.
  • the single-molecule nano drug is based on xanthine, and the isoproterenol is prepared according to 1:0: 0: 0; 0: 1: 0: 0; 0: 0: 1: 0; 0: 0: 0: , adenosine triphosphate, isobromide, superoxide dismutase self-assembly system;
  • the binary nano drug is based on jaundice, and is respectively 1: 1: 0: 0; 1: 0: 1: 0; 1: 0: 0: 1; 0: 1: 0: 0; 0: 1; 0: 0: 1: 1 ratio preparation of isoproterenol, adenosine triphosphate, isobromide, superoxide dismutase self-assembly system;
  • the ternary nano-medicine is based on jaundice, and is divided into 1: 1: 1: 0; 1: 0: 1: 1; 1: 1: 0: 1; 0: 1 : 1:1.
  • Adrenaline adenosine triphosphate, isobromide, superoxide dismutase self-assembly system;
  • the quaternary nanomedicine is based on jaundice, which is 1: 1: 1: 1; 1: 2: 2: 2; 1: 3: 3: 3; 2:1:2:3; 2: 2: 3: 1; 2: 3: 1: 2; 3: 1: 3: 2; 3: 2: 1: 3; 3: 3: 3:
  • the core component monomer, binary body, ternary body, quaternary body and pentad body of the invention and their different self-assembly systems The I-V curve, first derivative and time-phase-energy spectrum and frequency-phase-energy spectrum form 25 sets of array data and 24 size-adjustable nanomedicine quantum line arrays, such as: 1. 4, 1. 6 , 1. 8, 2. 0, 2. 5, 3. 0, 3. 5, 4, 5, 6, 7, 8, 10, 12, 14, 16, 20, 25, 30, 35, 40, 50 , 60, 70 nanometer line length.
  • the nanomedicine self-assembled bistable quantum wire array of the invention has geometrical configuration rules, controllable and adjustable scale, inelastic electron tunneling, and electrical properties of variable electron spin speed.
  • the invention not only benefits the development of innovative drugs for targeting disease mechanisms, but also contributes to the development of new materials for biocompatible, ultra-micro-sensing quantum information sensing and nano-structured magnetic memory (MRAM) devices.
  • MRAM magnetic memory
  • the invention is prepared by the following methods and procedures:
  • the P-type and N-type silicon wafers having a resistivity of 8-12 ohms ⁇ cm and 0. 01-0. 05 ohm-cm were used as substrates for the self-assembled quantum wires, and the above-mentioned medicinal components were pressed.
  • the L16 (2) 15 and L9 (3) 4 schemes were self-assembled on a silicon wafer substrate and placed at -4 ° C for 96 hours.
  • Figure 1 is a surface topographical view of a self-assembled xanthine-based nanomedicine binary quantum wire and a thin film on an N-type silicon wafer.
  • FIG. 2 is a nano-medical ternary quantum wire with a self-assembled xanthine-based N-type silicon wafer, a quantum bit of 254 90-degree electron spins or 127 180-degree spin ultrasound, and a surface topography of the film thereof.
  • Figure 3 is a surface topographical diagram of a self-assembled xanthine-based nonvolatile quantum bit nano drug pentad scale on a P-type silicon wafer.
  • Figure 4 is a self-assembled xanthine-based, up to 906 90 degree and 302 180 degree or 151 360 degree electron spin, optimal qubit nano drug pentad quantum wire and its surface on a P-type silicon wafer. Extension Bu structure diagram.
  • Figure 5 is a diagram showing the surface topography of a quantum bit nano drug pentad quantum wire and its thin film with self-assembled xanthine-based, electron spin phase (0, 90, 180, 360 degrees) on a P-type silicon wafer. .
  • Fig. 6 is a surface topographical structure of a quantum bit nano drug pentad quantum wire with adjustable self-assembled xanthine-based, electron spin phase (0, 90, 180, 270 degrees) on a P-type silicon wafer. .
  • Figure 7 is a surface topographical diagram of a nanomedicine pentad quantum wire and its thin film on a P-type silicon wafer with self-assembled xanthine-based, +/-10V start-up qubits.
  • Figure 8 is a nanomedicine pentad body with self-assembled scutellaria on the P-type silicon wafer, +/_7, 9V, respectively, starting 0-90 degrees-180 degrees and 0 degrees-90 degrees-360 degrees electron spin phase shifting.
  • Figure 9 is a nano-drug with self-assembled xanthine on a P-type silicon wafer, +/- 7, 8, 9V, respectively, starting 180-90 degrees-360 degrees and 0 degrees-90 degrees-360 degrees electron spin phase shifting.
  • Figure 10 is a +/- 2V starting qubit voltage-current curve (a), a Kondo effect conductance (b), a frequency-phase-energy spectrum (c), and a time-phase-energy spectrum (d) corresponding to Figure 1.
  • Figure 11 is a 954 90 degree and 477 180 degree electron spin, qubit voltage-current curve (a), Kondo effect conductance (b), frequency-phase-energy spectrum (c) corresponding to +/- 9V of Figure 2. And time-phase-energy spectrum (d).
  • Figure 12 is a non-volatile qubit voltage-current curve (a), Kondo effect conductance (b), frequency-phase-energy spectrum (c) and time corresponding to +/- 6, 8, 9, 10V of Figure 3. - Phase - energy spectrum (d).
  • Figure 13 is a diagram of the +/_7, 8, 9, 10V corresponding to Figure 4 starting a 180 degree-90 degree-180 degree round-trip electron spin, a qubit voltage-current curve (a), a Kondo effect conductance (b), a frequency-phase - Energy spectrum (c) and time-phase-energy spectrum and frequency-phase-energy spectrum (d).
  • Figure 14 is a 0-90 degree-360 degree round-trip electron spin, quantum bit voltage-current curve (a), Kondo effect conductance (b), frequency corresponding to +/_6, 7, 8, 9, 10V of Fig. 5. - phase-energy spectrum (c) and time-phase-energy spectrum.
  • Figure 15 is a volatility of the 180-90 degree-180 degree round-trip electron spin, quantum bit voltage-current curve (a), Kondo effect conductance (b), frequency-phase - corresponding to +/- 8, 9, 10V of Figure 6.
  • Energy spectrum (c) and time - Figure 16 is a corresponding +/- 8V corresponding to Figure 7 starting Q degrees - 90 degrees -18Q degrees and Q degrees - 90 degrees - 360 degrees round-trip electron spin, quantum bit voltage - current curve (a), Kondo effect conductance (b ), frequency-phase-energy spectrum (c) and time-phase-energy spectrum (d).
  • Figure 17 is a +/- 8, 9, 10V flammable 0 degree - 90 degree - 180 degree and 0 degree - 90 degree - 360 degree round-trip electron spin, qubit voltage-current curve (a), Kondo corresponding to Figure 8. Effect conductance (b), frequency-phase-energy spectrum (c) and time-phase-energy spectrum.
  • Figure 18 is a +/-8, 9, 10V corresponding to Figure 9 can start 0 degrees - 90 degrees - 360 degrees and 180 degrees - 90 degrees - 360 degrees round-trip electron spin, quantum bit voltage - current curve (a;), Kondo effect conductance (b), frequency-phase-energy spectrum (c) and time-phase-energy spectrum. detailed description
  • the results show a quantum wire array with a height of 10 nm (Fig. 3); the current-voltage (IV) curve shows the bistable electrical properties, ie, two levels of stable current/voltage such as +0.813 picoamperes and -19.95 picoamps.
  • the voltage is +/- 8 volts (Fig.
  • the differential conductance map (dl/dV) reveals a quantized Kondo effect, ie a maximum conductance peak of 13.08854 pA/volt at -3.741 volts (see Figure 12b);
  • the frequency-phase-energy map (FPP) shows a phase shift of 0 to -1260 degrees in the range of +/-50000 to 7.2475E-12 Hz, and the center position of the Y axis is seen at the center position of the X axis at 7.2475E-12 Hz.
  • 90 degree characteristic electron spin or 7 180 degree spin echo and Z axis direction energy change 0.00603 eV Fig.
  • time-phase-energy map shows 0 to 1000 microseconds 0 to 1260 degrees phase shift occurs within the range
  • TPP time-phase-energy map
  • 14 90-degree characteristic electron spins or 7 180-degree spin echoes and Z-axis direction energy changes of 0.00151 eV are observed at the center of the Y-axis (Fig. 12d);
  • Figures 12c and 12d together reveal that the ⁇ (1/2 ⁇ , -1/2 ⁇ ) characteristic electron spin produces quantum bits.
  • the results show a quantum wire array with a height of 4 nm (see Figure 4); the current-voltage (IV) curve shows the bistable electrical properties, ie high and low levels of stable current/voltage such as +20.71 picoamperes and -27.053 picoamperes , the voltage is +/- 7 volts (Fig. 13a); the differential conductance map (dl/dV) reveals the quantized Kondo effect, ie a maximum conductance peak of 110.492 pA/volt at - 2.376 volts (Fig.
  • the frequency-phase-energy map shows a phase shift of 180 to -18180 degrees in the range of +/-50000 to 7.2475E-12 Hz, and the center position of the Y axis is seen at the center position of the X axis at 7.2475E-12 Hz. 90 degrees or 33 3/2 IT or 404 1/4 ⁇ characteristic electron spin and ⁇ axis direction energy change 0.04216 eV (Fig.
  • the results show a quantum wire array with a height of 3.5 nm (Fig. 5); the current-voltage (IV) curve shows the bistable electrical characteristics, that is, two levels of stable current/voltage such as +1.021 picoamperes and -23.998 picoamps.
  • the voltage is +/- 6 volts (Fig. 14a); the differential conductance map (dl/dV) reveals the quantized Kondo effect, ie the maximum conductance peak at 67.2825 pA/volt at -1.717 volts (Fig.
  • - Phase-energy map shows a phase shift of 0 to -11512 degrees in the range of +/-50000 to 7.2475E-12 Hz, 128 in the center of the Y-axis at the center of the X-axis at 7.2475E-12 Hz 90 degree characteristic electron spin or 64 180 degree spin echo or 32 2 ⁇ phase shift and ⁇ axis direction energy change 0.01581 eV (Fig. 14c); and time-phase-energy map (TPP)
  • a phase shift of 0 to 11512 degrees occurs in the range of 0 to 1000 microseconds, and 128 90-degree characteristic electron spins or 64 180-degree spin ultrasounds (spin echo) occur at the center of the X-axis at 513 microseconds.
  • a frequency-phase-energy map shows 180 to -14580 in the range of +/-50000 to 7.2475E-12 Hz Phase shift, 162 90 degree characteristic electron spin or 81 180 degree spin echo and Z axis energy change 9.58648E at the center of the X axis at 7.2475E-12 Hz. -9 eV (Fig. 15c); and time-phase-energy map (TPP) showing a phase shift of 180 to 14940 degrees from 0 to 1000 microseconds, with a Y-axis center position at 513 microseconds at the center of the X-axis 166 90 degree characteristic electron spins or 83 180 degree spin echoes and Z axis energy changes of 0.00298 electron volts occurred (Fig. 15d); Figures 15c and 15d together reveal ⁇ (1/2 ⁇ , ⁇ , -1/2 ⁇ , - ⁇ ) Characteristic electron spins produce quantum bits.
  • the results show a quantum wire array with a height of 8 nm (Fig. 7); the current-voltage (IV) curve shows the bistable electrical properties, that is, two levels of stable current/voltage such as +20.723 picoamperes and -27.549 picoamps.
  • the voltage is +/- 8 volts (Fig.
  • the differential conductance map (dl/dV) reveals the quantized Kondo effect, ie a maximum conductance peak of 55.54688 pA/volt at -0.223 volts (see Figure 16b);
  • the frequency-phase-energy map (FPP) shows a phase shift of 0 to -10800 degrees in the range of +/-50000 to 7.2475E-12 Hz, and the center position of the Y-axis is visible at the center of the X-axis at 7.2475E-12 Hz. 90 degrees or 40 3/2 ⁇ or 240 1/4 ⁇ characteristic electron spins or 60 180 degree spin echoes and Z-axis energy changes of 0.03332 electron volts (Fig.
  • Time - Phase-Energy Map shows 0 to 1000 A phase shift of 0 to 10800 degrees occurs in the microsecond range, and 120 90 degrees or 40 3/2 ⁇ or 240 1/4 ⁇ characteristic electron spins are observed at the center of the Y axis at 513 microseconds.
  • 60 180-degree spin echo and Z-axis energy changes of 0.00833 eV (Fig. 16d);
  • Figures 16c and 16d together reveal ⁇ (1/2 ⁇ , ⁇ , 3/2 ⁇ , 1/4 ⁇ , -1/2 , - ⁇ , -3/2 , - 1/4 ⁇ ) Characteristic electron spins generate qubits.
  • the results show a quantum wire array with a height of 4.5 nm (Fig. 8); the current-voltage (IV) curve shows the bistable electrical properties, ie, two levels of stable current/voltage such as +21.576 picoamperes and -31.509 picoamps.
  • the voltage is +/- 7 volts (Fig. 17a); the differential conductance map (dl/dV) reveals the quantized Kondo effect, which shows a maximum conductance peak of 63.5786 pA/volt at -0.715 volts (Fig.
  • - Phase-energy map shows a phase shift of 0 to -15480 degrees in the range of +/-50000 to 7.2475E-12 Hz, and 172 centers of the Y-axis are visible at the center position of the X-axis at 7.2475E-12 Hz.
  • 90 degree characteristic electron spin or 81 180 degree spin echo and Z axis energy change 0.05289 electron volts (see Figure 17c) ;
  • time-phase-energy map (TPP) display 0 to 1000 microseconds
  • a phase shift of 0 to 15480 degrees occurs in the range, and 172 90-degree characteristic electron spins or 81 180-degree spin echoes and Z-axis energy are observed at the center of the Y-axis at 513 microseconds.
  • Change 0.01322 electron volts (Fig. 17d);
  • Figures 17c and 17d together reveal ⁇ (1/2 ⁇ , ⁇ , -1/2 ⁇ , - ⁇ ) Of an intrinsic electron spins qubit.
  • the results show a quantum wire array with a height of 50 nm (Fig. 9); the current-voltage (IV) curve shows the bistable electrical properties, ie, two levels of stable current/voltage such as +5.478 picoamperes and -25.614 picoamps.
  • the voltage is +/- 8 volts (Fig. 18a); the differential conductance map (dl/dV) reveals a quantized Kondo effect, ie a maximum conductance peak of 35.5468 pA/volt at -1.096 volts (Fig.
  • - Phase-energy map shows a phase shift of 180 to 23580 degrees in the range of +/- 50000 to 7.2475E-12 Hz, 262 90 at the center of the X-axis at 7.2475E-12 Hz.
  • time-phase-energy map (TPP) shows 180 to 0 to -23220 degrees phase shift in the range of 1000 microseconds, 158 90 degrees or 69 2 ⁇ characteristic electron spins or 78 180 degree spin ultrasounds can be seen at the center of the X axis at 513 microseconds.
  • the current-voltage (IV) curve shows the bistable electrical characteristics, that is, two levels of stable current/voltage such as +/- 34.581 picoamperes, and a voltage of +/ -9 volts Figure 10a);
  • the differential conductance map (dl/dV) reveals the quantized Kondo effect, ie the maximum conductance peak at 140.51398 pA/volt at -3.55 volts (see Figure 10b); frequency-phase-energy
  • the map (FPP) shows a phase shift of 0 to -19080 degrees in the range of +/-50000 to 7.2475E-12 Hz, and 254 90 degree characteristic electrons appear at the center of the Y axis at 7.2475E-12 Hz at the center of the X axis.
  • the results show a quantum wire array with a height of 16 nm (Fig. 2); the current-voltage (IV) curve shows the bistable electrical properties, that is, the high and low levels of stable current/voltage such as +3.568 picoamperes and -22.19 picoamps.
  • the voltage is +/- 2 volts (Fig.
  • the differential conductance map (dl/dV) reveals the quantized Kondo effect, ie the maximum conductance peak at 315.62 pico-ampere/volt at -0.874 volts (figure lib);
  • - Phase-energy map (FPP) shows a phase shift of 0 to 18540 degrees in the range of +/- 50000 to 7.2475E-12 Hz, and 206 90 positions at the center of the Y axis at 7.2475E-12 Hz at the center of the X axis.
  • time-phase-energy map show 0 to -0 in the range of 0 to 1000 microseconds 18180 degree phase shift, at the 513 microseconds of the X-axis center position, 202 90-degree characteristic electron spins or 101 180-degree spin echoes and Z-axis energy changes of 0.01116 electron volts are visible at the center of the Y-axis.
  • Figure 11c and lid together reveal that the ⁇ (1/2 ⁇ , -1/2 ⁇ ) characteristic electron spin produces quantum bits.

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Abstract

L’invention concerne un réseau de fil quantique autoassembleur et bistable de nano médicament et sa méthode de préparation. Le réseau de fil quantique bistable avec bit quantique et effet kondo est préparé par autoassemblage d’un radical oxygène antagoniste de l'antioxidase, d’un agoniste du récepteur β, d’un agoniste du récepteur P2, d’un antagoniste calcique d’alkylphénylamines, et/ou d’un monomère nucléotide de purines et de ses composés binaire, ternaire, quaternaire ou quinaire et par utilisation de l'interaction d'électrons inélastiques pénétrant par effet tunnel dans la présente invention.
PCT/CN2006/000107 2005-07-15 2006-01-23 Réseau de fil quantique autoassembleur et bistable de nano médicament et sa méthode de préparation Ceased WO2007009326A1 (fr)

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US9468610B2 (en) 2007-09-12 2016-10-18 Merz Pharma Gmbh & Co. Kgaa 1-aminocyclohexane derivatives for the treatment of hearing loss
CN107954505A (zh) * 2017-12-22 2018-04-24 钟楚田 一种纳米量子靶饮水装置与应用

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