[go: up one dir, main page]

WO2007008766A1 - Appareil et procede de correction de rayons - Google Patents

Appareil et procede de correction de rayons Download PDF

Info

Publication number
WO2007008766A1
WO2007008766A1 PCT/US2006/026690 US2006026690W WO2007008766A1 WO 2007008766 A1 WO2007008766 A1 WO 2007008766A1 US 2006026690 W US2006026690 W US 2006026690W WO 2007008766 A1 WO2007008766 A1 WO 2007008766A1
Authority
WO
WIPO (PCT)
Prior art keywords
detector
electromagnetic radiation
lenslet
lenslets
cra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/026690
Other languages
English (en)
Inventor
Robert H. Cormack
Edward Raymond Dowski, Jr.
Paulo E. X. Silveira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision CDM Optics Inc
Original Assignee
CDM Optics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CDM Optics Inc filed Critical CDM Optics Inc
Publication of WO2007008766A1 publication Critical patent/WO2007008766A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Definitions

  • FIG. 1 shows a portion 10 forming a portion of a prior art detector array.
  • Portion 10 includes a lenslet 12 optically connected with a detector 14.
  • Incoming light rays 16 (enclosed by a dashed ellipse) are normally incident on lenslet 12 from the left side of FIG. 1.
  • a ray at a center of the bundle of incoming light rays is commonly defined as a chief ray, and its angle with respect to a line that is normal to the detector surface is defined as the chief ray angle ("CRA,” e.g., ⁇ in in Fig. 2).
  • Lenslet 12 refracts normally incident light rays 16 such that light rays transmitted through the lenslet are focused near a center of a photodetection region 18 of detector 14.
  • the photodetection region is that region of detector 14 where electromagnetic radiation incident thereon is converted into an electric signal.
  • the photodetection region is equivalent to a photodetection region of a photodetection transistor.
  • a plurality of chief rays are present for a given set of imaging optics; for example, a first group of light rays 40A (indicated by a bracket) includes a chief ray 42 A , while a second group of light rays 40 B (also indicated by a bracket) includes a different, chief ray 42 ⁇ .
  • the angle formed between the chief ray and a normal 44 defined at center 39 of stop 38 is the CRA of that chief ray.
  • chief ray 42 A is incident at a CRA of ⁇ CRA A
  • chief ray 42 B is incident at a CRA of ⁇ CRA B such that a range of CRAs is definable by imaging optics 32.
  • Portion 30 also includes a substrate 52 (e.g., a wafer) supporting a detector array 54 thereon (a portion of which is shown in FIG. 2).
  • Detector array 54 includes a plurality of photodetection regions 56 distributed across substrate 52.
  • Portion 30 further includes a lenslet array 58, which includes a plurality of lenslets 12. It is noted that, although each photodetection region 56 is not shown to be physically connected with a corresponding lenslet within lenslet array 58 (i.e., as was the case of portion 10 of FIG. 1), the operating principles of the systems exemplified by portions 10 and 30 are essentially the same.
  • Lenslet array 58 is generally intended, for example, to increase fill factor of detector array 54 by concentrating electromagnetic radiation onto the photodetection regions.
  • Incident electromagnetic radiation 40A including chief ray 42 A , is incident on a portion of lenslet array 58 at the CRA indicated as ⁇ CRA A - While each lenslet 12 in lenslet array 58 may be configured to focus normally incident electromagnetic radiation onto the center of a corresponding photodetection region, without additional modifications lenslet 12 focuses incident electromagnetic radiation away from the center of the corresponding photodetection region (such as exemplified by the focusing of electromagnetic radiation 40A) or, for very large CRAs, at a spot away from photodetection regions 56 (such as exemplified by the propagation of electromagnetic radiation 40 B ), such that some of the incident electromagnetic radiation does not fall on a photodetection region and is consequently lost.
  • each photodetection region 56 may be considered to exhibit a cone of acceptance angles 60 over which incident electromagnetic radiation is receivable at that detection region. That is, electromagnetic radiation incident on the photodetection region with an incidence angle within the cone of acceptance angles is detectable at the photodetection region, while electromagnetic radiation with an incidence angle outside of the cone of acceptance angles is lost by, for example, reflection from the photodetection region surface.
  • chief ray 42 A falls on photodetector 56 at an angle within cone of acceptance angles 60, such that chief ray 42 A is receivable at the photodetection region.
  • chief ray 42 B does not fall on any of the photodetection regions and is thereby lost.
  • CCD Charge Coupled Device
  • CMOS Complementary Metal Oxide Silicon
  • CCD Charge Coupled Device
  • CMOS detectors are potentially suitable for use in digital cameras, lower cost and higher flexibility makes CMOS detectors an attractive choice.
  • CMOS chip-making processes are well- established and have high-yields, the cost of fabricating a CMOS wafer is approximately one-third the cost of fabricating a CCD wafer.
  • CMOS detectors have other cost advantages; CMOS detectors and associated processing circuitry may be fabricated on the same chip, while CCD fabrication typically does not include processing circuitry on the same chip as the photodetection region.
  • CMOS detectors can utilize the existing manufacturing infrastructure and circuit libraries available to CMOS chip designers.
  • CMOS detectors generated noise and cross-talk, and therefore were mainly used in low-cost cameras.
  • CMOS technology now provide CMOS detectors capable of image quality comparable to that of CCDs used in high-end digital cameras.
  • CCD and CMOS detector arrays are both formed of a plurality of detectors.
  • a principal difference between CCD and CMOS detectors is that, in a CCD, nearly the entire surface area is available for photon-to-electrical signal conversion whereas, in a CMOS detector, a significant portion of detector surface area is occupied by electronic circuitry that does not capture photons.
  • Typical CMOS detectors today have fill factors of approximately 30% (i.e., the photodetection region, where photon-to-electrical signal conversion occurs, takes up approximately 30% of the surface area of each CMOS detector) while CCDs usually have fill factors that are closer to 95%.
  • each detector in a detector array is designed to detect electromagnetic radiation arriving from a different direction such that the pattern of electromagnetic radiation collected at the detector array represents an image of the object from which the electromagnetic radiation emanated.
  • electromagnetic radiation from a distant source in a given direction relative to the imaging system will be converted by imaging optics into a cone of electromagnetic radiation converging on a given detector, where the angular width of the cone is related to the F/# of the collection imaging optics.
  • the cone of electromagnetic radiation is tilted away from normal incidence for photodetectioii regions nearer to the edge of the detector array, and is less tilted for photodetection regions closer to the center of the detector array.
  • a ray at the center of each cone of electromagnetic radiation is defined as the chief ray (e.g., chief rays 42A and 42 B in FIG. 2), and its angle with respect to a line that is normal to the aperture stop (e.g., normal 44 in FIG. 2) is defined as the CRA (e.g., ⁇ CRA A and ⁇ CR A B , respectively, in FIG. 2).
  • CCD detectors are able to accept cones of electromagnetic radiation over a range of CRAs, as most of the surface of the detector CCD consists of photodetection regions. Increased CRA of incoming electromagnetic radiation at the edge of the detector CCD has little effect on the detector CCD's detection efficiency.
  • CMOS detectors In CMOS detectors, on the other hand, photodetection regions often form less than one-third of total detector surface area. That is, fill factor of a CMOS detector is significantly smaller than fill factor of a CCD detector. Moreover, the photodetection region usually lies deep beneath metal layers, making it especially difficult to direct the incident electromagnetic radiation toward the photodetection region of the CMOS detector. Therefore, a lenslet array is often used with CMOS detectors in order to concentrate incident electromagnetic radiation hitting each detector onto the photodetection region of the detector. However, the characteristics of the CMOS detector geometry make photodetection especially difficult in the presence of large CRAs, even when lenslet arrays are used.
  • a lenslet-detector combination such as that shown in FIG. 1, viewed as a miniature optical system in its own right, has a limited field of view ("FOV").
  • FOV field of view
  • the lenslet-detector combination will only accept electromagnetic radiation from a given range of incidence angles.
  • the FOV of the lenslet-detector combination is designed to be at least as large as the cone of electromagnetic radiation directed to that lenslet-detector combination by the collection optics.
  • the cone of electromagnetic radiation from the imaging optics may lie partially outside the FOV of the lenslet-detector combination, resulting in light loss and reduced detection efficiency.
  • the present disclosure relates generally to optical elements and, more particularly, to an optical solution for redirecting input electromagnetic radiation to desired locations on a substrate.
  • the incoming electromagnetic radiation includes chief rays, each having a chief ray angle (CRA) within a range of CRAs limited by a stop of the imaging optics.
  • the improvement includes a corrective element that cooperating with the imaging optics to ensure that all chief rays over the range of CRAs fall within a cone of acceptance angles of the detector.
  • the corrective element may be a tilted lenslet, a diffractive element, a refractive element, a discretized refractive element or a subwavelength structure.
  • an optical system for accepting electromagnetic radiation at a normal incidence angle, and over a range of chief ray angles (CRAs) away from the normal incidence angle.
  • the optical system includes a detector array having a plurality of detectors and a plurality of lenslets.
  • Each one of the plurality of lenslets is configured for directing electromagnetic radiation incident thereon onto a corresponding one of the plurality of detectors.
  • at least some of the lenslets are tilted with respect to the normal incidence angle such that electromagnetic radiation incident at the normal incidence angle, as well as over the range of chief ray angles, is receivable at the detector array.
  • FIG. 2 shows a cross sectional view of a portion of another prior art detector array system.
  • FIG. 5 and FIG. 6 are diagrammatic illustrations, in cross section, of a portion of the ray correction system of FIG. 4.
  • FIG. 7 is a diagrammatic illustration, in cross section, of a ray correction system of the present disclosure including a plurality of corrective elements in a stack over the lenslet array.
  • FIG. 12 is a diagrammatic, top view illustration of a portion of a substrate with an array of corrective elements disposed over an array of detectors (not visible), shown here to illustrate an example of a possible shape of the corrective elements.
  • FIG. 15 schematically shows one portion of a detector array where a lenslet is tilted with respect to the detector normal, in accordance with the present disclosure.
  • FIG. 20 further details light rays transmitted and focused through the central portion of the lenslet configuration of FIG. 19, in accordance with the present disclosure.
  • FIG. 21 shows light rays incident upon a lenslet, highlighting refraction of a portion of the light rays that are incident at an angle away from normal incidence, towards a detector.
  • FIG. 24 shows a lenslet-detector combination that is equivalent to the detector and lenslet combination of FIG. 23.
  • FIG. 28 shows a schematic diagram of a chirped diffractive grating used in place of a lenslet array in combination with a detector array, in accordance with the present disclosure.
  • FIG. 31 shows an example of a discretized refractive element, which has been designed in accordance with the present disclosure.
  • FIG. 3 includes a plot 70 of angle as a function of field position for a detector array system. An angle value of zero corresponds to a normal angle with respect to the aperture stop of the imaging optics. Field position is zero at the center of the substrate on which the detector array is supported, and increases toward the edge of the substrate.
  • a line 72 represents incoming CRAs as a function of field position for a given set of imaging optics.
  • a line 74 represents corrected CRAs as a function of field position for a given set of imaging optics.
  • a line 75 represents the maximum acceptance angle of the photodetection regions of the detector array.
  • FIG. 4 illustrates a portion of a detector array system 100, in a cross sectional view, in accordance with the present disclosure.
  • System 100 has a number of components in common with portion 30 shown in FIG. 2; in particular, system 100 includes substrate 52 supporting detector array 54, including a plurality of photodetection regions 56, and lenslet array 58 including a plurality of lenslets 12. Additionally, system 100 includes a ray correction apparatus, generally indicated by a reference numeral 102, in accordance with the present disclosure.
  • ray correction apparatus 102 includes a substrate 104 with a corrective element 106 attached thereto.
  • Substrate 104 maybe, for example, transparent to wavelengths to be received at photodetection regions 56.
  • FIG. 6 shows a system 150 including a corrective element 152 that is placed in the path of the incident electromagnetic radiation propagation between lenslet array 58 and photodetection regions 56.
  • a corrective element 152 that is placed in the path of the incident electromagnetic radiation propagation between lenslet array 58 and photodetection regions 56.
  • lenslet array 58 would focus incident electromagnetic radiation 40 between photodetection regions 56.
  • corrective element 152 serves to correct the direction of propagation of the resulting electromagnetic radiation such that the electromagnetic radiation then falls on one of photodetection region 56.
  • FIGS. 7 and 8 show other embodiments of the ray correction apparatus of the present disclosure.
  • FIG. 7 shows a portion 200 of a detector system that has a ray correction apparatus 202 including a plurality of corrective elements 106, 204, 206, 208, 210 and 212.
  • These corrective elements maybe supported by a plurality of substrates, such as substrate 104 supporting corrective elements 106 and 204, and a substrate 214 supporting corrective elements 210 and 212.
  • corrective elements may be independently stacked (e.g., as shown for corrective elements 206 and 208). Stacking a plurality of corrective elements may yield greater ray corrective effects than would be possible with a single corrective element, such that more compensation may be effected.
  • Corrective elements 106, 204, 208, 210 and 212 may be configured such that ray correction effected by ray correction apparatus 252 is tailored for a variety of wavelengths corresponding to the colors in the color filter.
  • ray correction apparatus 252 may be configured such that a green component of the incident electromagnetic radiation is directed specifically through the detector/color filter combination configured to detect green light, thus performing color separation in addition to CRA correction.
  • CRA correction may include, for instance, tilting (with respect to the detector normal) and/or shifting one or more lenslets within a lenslet array that is used with a detector array. Shifting of the lenslets with respect to incident electromagnetic radiation may compensate for some range of incident electromagnetic radiation with varying incident chief ray angle.
  • the current disclosure provides for a combination of tilts and shifts of lenslets to tilt the electromagnetic radiation acceptance cone angle of a lenslet-detector combination to an angle that matches the incoming cone angle, thereby preventing light loss. Since, in a given optical system, the CRA is typically different for each detector, each detector within the detector array may require a unique amount of lenslet tilt/shift in order to compensate for the particular CRA at that detector.
  • Field-dependent asymmetric (i.e., tilted and/or shifted) lenslets may facilitate integration of optical elements into a lenslet array.
  • tilted lenslets may be fabricated at low cost and/or provide high reliability image capturing devices since few components (e.g., additional optical elements) or assembly steps may be required.
  • the tilt of lenslets in such an array may, for example, vary from the center of the array (zero tilt) to greater and greater tilts at outer edges of the array.
  • CRA correction for a single lenslet-detector combination within a detector array system is examined more closely in the following figures.
  • front surface 652 A may be anti-reflection coated to reduce reflection losses.
  • anti-reflection coating may be simpler to design and have higher performance and/or lower cost than an anti- reflection coating for the front surface of tilted lenslet 602 of FIG. 15, because front surface 652 A is a flat surface while front surface 602 A of lenslet 602 is curved.
  • front surface 652A may be tilted towards the incident CRA, thereby further reducing reflection losses.
  • Mesh 952 may be drawn using commercial software for providing graphic solutions to numerical problems.
  • mesh 952 as shown in FIG. 27, may be drawn using MATLAB® using the following m-files: [m-file FindLenslet.m]
  • %OUTPUT % Tp: Angle of chief ray inside detector
  • % AOI Total angle of incidence for chief ray:
  • FIG. 28 shows a portion 1500 of a system that utilizes a diffractive grating 1502 in place of a lenslet array.
  • the diffractive grating is in a form of a linearly chirped grating with sub-wavelength features.
  • the effective index of refraction increases linearly with space, producing a linearly varying optical path difference (OPD) that is akin to that of a tilted surface.
  • OPD optical path difference
  • sub-wavelength features may also be used to provide an effective index of refraction that produces an OPD that is equivalent to that produced by a tilted lenslet, and is thus capable of focusing electromagnetic radiation as well as performing CRA correction.
  • CRA correction may also be performed using diffractive optical elements.
  • the tilted surface described herein may also be implemented using diffractive elements.
  • the diffractive elements used in the CRA correction elements may include features that are smaller than the wavelength of the electromagnetic radiation incident thereon (i.e., sub-wavelength features).
  • sub-wavelength features are advantageous in that they may exhibit desirable optical characteristics over a broad range of wavelengths.
  • the gratings with sub-wavelength features may be in the form of a surface relief grating fashioned on a material with a high index of refraction.
  • the effective index seen by electromagnetic radiation incident at a wavelength substantially larger than the grating pitch is given by a weighted average between the indices of the two materials in the boundary, where the concentration of each material determines the weights.
  • concentration of each material determines the weights.
  • a linear phase profile may be achieved by linearly varying the concentration of the high index material.
  • the same technique may also be used to implement a lens, by creating a surface profile with an effective index that follows the phase variation of the desired lens.
  • a tilted CRA corrector may also be implemented by creating a surface profile, using sub-wavelength features, with an effective index that follows that of a tilted lens, generically described by the summation of a parabola and a linear slope.
  • Sub-wavelength grating 1602 includes a plurality of subwavelength structures 1610 spaced apart with spacing that varies as a function of spatial distance x (indicated by an arrow 1612) along the interface.
  • sub-wavelength grating 1602 exhibits a spatially- varying effective index of refraction. Consequently, incoming wavefront 1604 is altered as a result of passing through sub-wavelength grating 1602 and emerges as an outgoing wavefront 1614 (indicated by another set of parallel dashed lines) with a chief ray 1616 making a CRA of ⁇ out with respect to the normal.
  • FIG. 30 graphically illustrates the dependence of the effective index of refraction.
  • a graph 1650 of FIG. 30 shows a plot of the effective index of refraction n eff (x) as a function of x.
  • High index n ⁇ (indicated by a straight, dashed line 1652) and low index n L (indicated by another straight, dashed line 1654), as well as a mean index n m (indicated by a straight, dashed line 1656), are indicated on graph 1650.
  • the effective index of refraction n eff (x) varies as a function of distance x and, in the case of sub-wavelength diffraction grating 1600 of FIG. 29, the effective index of refraction n e ⁇ c) increases with x, as indicated by a curve 1660.
  • n eff (x) The spatial variation of n eff (x) is seen to be nearly linear with respect to x for a portion of curve 1660, with an effective refraction angle of ⁇ eff , as indicated between a dashed line 1662, which follows the linear portion of curve 1660, and horizontal line 1664.
  • ⁇ eff an effective refraction angle of ⁇ eff , as indicated between a dashed line 1662, which follows the linear portion of curve 1660, and horizontal line 1664.
  • n - ⁇ eff n L sin(O > (Eq- 4) Therefore, given knowledge of the incoming wavefront and the desired CRA of the outgoing wavefront, a desired effective index of refraction n eff (x) of the sub- wavelength diffraction grating (and consequently the effective refraction angle ⁇ eff ) may be calculated and the sub-wavelength diffraction grating may be designed accordingly.
  • FIG. 31 shows an example of a surface sag suitable for use in a discretized refractive element, such as was earlier described in the context of FIG. 10. This particular sag surface, if made fine enough, can approximate a smooth surface such as shown in FIG. 9.
  • FIG. 31 shows a plot 1700 of the depth (in microns) of the sag surface versus distance from the center of the CRA correction element. Plot 1700 has been calculated using a MATLAB ⁇ routine as follows:
  • %DelR .1; %(Use for fabrication table) %Radius coordinate along top surface: %Note: this Rmax is adjusted to give a 25 deg output ray at
  • the EFFECTIVE edge of the detector 1.44 mm % (diagonal of 640x480, 3.6 micron detectors) %The last valid facet(s) are replicated to extend the array % to MaxR, the maximum extent of the construction. This is done % to allow for some misalignment of the discretized surface to the array.
  • Thetal thetal *pi/l 80; %(radians)% %Cal culations:
  • RoutLin 0:(DelR*le-3):rout(end);
  • Theta3 theta3*pi/180
  • %Construction Array is depth of discretized surface (mm) vs. rout:
  • CA zeros(size(rout)
  • RFS tan(Psi); %Calculate Transition Facet Slope (avoid singularity at center)
  • CA(ii) CA(ii- 1) + RFS(ii)*rD; %If Tmax is reached, clip and switch to transition facet: if CA(ii) > Tmax,
  • CA(ii) Tmax; FTF - 0; %Grab current Transition Facet Slope:
  • CTS TFS(ii); end else %We are doing a Transition Facet %Check that last CA is not at 0 if CA(ii- 1) > 0
  • LastRFS RFS(end);
  • LastrD (rout(end) - rout(end-l))*le3; while CA(end) ⁇ Tmax;
  • CA [CA NeXtCA]
  • LastCTS TFS(end); while CA(end) > 0
  • CA [CA NeXtCA]
  • %Plot clipped to size of detector array %Find indices of arrays inside detector array.
  • xx fmd(abs(x) ⁇ maxX);
  • yy fmd(abs(x) ⁇ max Y); figure(3) surfl(x(xx)* 1 e3,x(yy)* 1 e3,R(yy,xx),Lgt) axis equal shading('flat') colormap(gray) camup([0 1 O]) set(gca,'ZTickLabelV') if O xlabel(' ⁇ mum') ylabel(' ⁇ mum') title('Refractive surface seen from Detector Side') else set(gca/XtickLabel',") set(gca,'Yticklabel',") set(gca/Ztick',[]) set(gca, ⁇ tick',[]) set(gca,'Xtick',[]) end

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un système de détecteur permettant de recevoir un rayonnement électromagnétique entrant comprenant une gamme d'angles de rayons de champ (CRA) limitée par une butée d'éléments optiques d'imagerie et dans lequel une amélioration consiste en un élément correctif coopérant avec les éléments optiques d'imagerie de manière à garantir que les rayons de champ sur la gamme de CRA tombent dans des angles d'un cône d'admission du détecteur. L'élément correctif peut être une lentille inclinée, un élément de diffraction, un élément de réfraction, un élément de réfraction discrétisé ou une structure de sous-longueurs d'ondes. Le système de détecteur recueille une gamme de rayons de champ à partir des éléments optiques d'imagerie. Le système comprend un réseau de détecteurs comprenant individuellement des angles du cône d'admission et un élément correctif comprenant un élément parmi: un réseau de lentilles comprenant au moins une lentille inclinée; un élément de diffraction ; un élément de réfraction, un élément de réfraction discrétisé; et des structures de sous-longueurs d'ondes. L'élément correctif redirige chaque rayon de champ dans les angles du cône d'admission.
PCT/US2006/026690 2005-07-08 2006-07-10 Appareil et procede de correction de rayons Ceased WO2007008766A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US69771005P 2005-07-08 2005-07-08
US60/697,710 2005-07-08
US80869806P 2006-05-26 2006-05-26
US60/808,698 2006-05-26

Publications (1)

Publication Number Publication Date
WO2007008766A1 true WO2007008766A1 (fr) 2007-01-18

Family

ID=37401498

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/026690 Ceased WO2007008766A1 (fr) 2005-07-08 2006-07-10 Appareil et procede de correction de rayons

Country Status (1)

Country Link
WO (1) WO2007008766A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7710658B2 (en) 2006-03-06 2010-05-04 Omnivision Cdm Optics, Inc. Zoom lens systems with wavefront coding
US7920339B2 (en) 2008-07-02 2011-04-05 Aptina Imaging Corporation Method and apparatus providing singlet wafer lens system with field flattener
WO2010141453A3 (fr) * 2009-06-01 2011-06-23 Han Jefferson Y Détection d'effleurement
DE102010005097A1 (de) 2010-01-20 2011-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Temperierbare Batteriezellenanordnung
WO2011088997A1 (fr) 2010-01-20 2011-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Agencement de cellules d'accumulateur pouvant être tempérées
DE102010014915A1 (de) 2010-04-14 2011-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Temperierbare Batteriezellenanordnung
US8144271B2 (en) 2006-08-03 2012-03-27 Perceptive Pixel Inc. Multi-touch sensing through frustrated total internal reflection
US8441467B2 (en) 2006-08-03 2013-05-14 Perceptive Pixel Inc. Multi-touch sensing display through frustrated total internal reflection
US8624853B2 (en) 2009-06-01 2014-01-07 Perceptive Pixel Inc. Structure-augmented touch sensing with frustated total internal reflection
US8736581B2 (en) 2009-06-01 2014-05-27 Perceptive Pixel Inc. Touch sensing with frustrated total internal reflection
EP2726933A4 (fr) * 2011-06-30 2015-03-04 Hewlett Packard Development Co Affichage tridimensionnel à couche de lentilles à sous-longueurs d'ondes résonantes, s'utilisant sans lunettes et destiné à de multiples spectateurs

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0153153A1 (fr) * 1984-02-16 1985-08-28 Hercules Incorporated Orifice à autoréglage pour le générateur de gaz d'un statoréacteur et méthode de régulation pour la génération de gaz
EP0840502A2 (fr) * 1996-11-04 1998-05-06 Eastman Kodak Company Caméra digitale compacte avec champs de vue segmentés
US5822125A (en) * 1996-12-20 1998-10-13 Eastman Kodak Company Lenslet array system
US20040051806A1 (en) * 2000-12-28 2004-03-18 Pierre Cambou Integrated-circuit technology photosensitive sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0153153A1 (fr) * 1984-02-16 1985-08-28 Hercules Incorporated Orifice à autoréglage pour le générateur de gaz d'un statoréacteur et méthode de régulation pour la génération de gaz
EP0840502A2 (fr) * 1996-11-04 1998-05-06 Eastman Kodak Company Caméra digitale compacte avec champs de vue segmentés
US5822125A (en) * 1996-12-20 1998-10-13 Eastman Kodak Company Lenslet array system
US20040051806A1 (en) * 2000-12-28 2004-03-18 Pierre Cambou Integrated-circuit technology photosensitive sensor

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7710658B2 (en) 2006-03-06 2010-05-04 Omnivision Cdm Optics, Inc. Zoom lens systems with wavefront coding
US8144271B2 (en) 2006-08-03 2012-03-27 Perceptive Pixel Inc. Multi-touch sensing through frustrated total internal reflection
US8441467B2 (en) 2006-08-03 2013-05-14 Perceptive Pixel Inc. Multi-touch sensing display through frustrated total internal reflection
US8259240B2 (en) 2006-08-03 2012-09-04 Perceptive Pixel Inc. Multi-touch sensing through frustrated total internal reflection
US7920339B2 (en) 2008-07-02 2011-04-05 Aptina Imaging Corporation Method and apparatus providing singlet wafer lens system with field flattener
US8624853B2 (en) 2009-06-01 2014-01-07 Perceptive Pixel Inc. Structure-augmented touch sensing with frustated total internal reflection
WO2010141453A3 (fr) * 2009-06-01 2011-06-23 Han Jefferson Y Détection d'effleurement
US8736581B2 (en) 2009-06-01 2014-05-27 Perceptive Pixel Inc. Touch sensing with frustrated total internal reflection
US9323396B2 (en) 2009-06-01 2016-04-26 Perceptive Pixel, Inc. Touch sensing
WO2011088997A1 (fr) 2010-01-20 2011-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Agencement de cellules d'accumulateur pouvant être tempérées
DE102010005097A1 (de) 2010-01-20 2011-07-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Temperierbare Batteriezellenanordnung
DE102010014915A1 (de) 2010-04-14 2011-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Temperierbare Batteriezellenanordnung
EP2726933A4 (fr) * 2011-06-30 2015-03-04 Hewlett Packard Development Co Affichage tridimensionnel à couche de lentilles à sous-longueurs d'ondes résonantes, s'utilisant sans lunettes et destiné à de multiples spectateurs
US9372349B2 (en) 2011-06-30 2016-06-21 Hewlett-Packard Development Company, L.P. Glasses-free 3D display for multiple viewers with a resonant subwavelength lens layer

Similar Documents

Publication Publication Date Title
US20230062193A1 (en) Multilayered meta lens and optical apparatus including the same
US7453653B2 (en) Low height imaging system and associated methods
CN108681703B (zh) 用于指纹识别的装置、模组、设备及系统
US9880391B2 (en) Lens array modules and wafer-level techniques for fabricating the same
WO2021073016A1 (fr) Dispositif de reconnaissance d'empreintes digitales et appareil électronique
US8634017B2 (en) Focus detection apparatus, image pickup device, and electronic camera
EP1598873B1 (fr) Capteur d'images CMOS et méthode de fabrication associée
US20100002313A1 (en) Method and apparatus providing singlet wafer lens system with field flattener
CN103620782B (zh) 固体摄像元件以及摄像装置
EP4102570B1 (fr) Module de caméra, dispositif électronique et instrument de véhicule
WO2007008766A1 (fr) Appareil et procede de correction de rayons
US8970751B2 (en) Solid-state imaging device
CN110957336B (zh) 具有衍射透镜的相位检测像素
CN102637711B (zh) 光电转换元件、及使用该元件的光电转换装置和成像系统
CN100481471C (zh) 成像装置及其设置方法
CN111837131B (zh) 指纹识别装置和电子设备
CN211480030U (zh) 薄型化光学指纹识别装置
US8188525B2 (en) Image sensor
CN210836126U (zh) 感光像元、图像采集器、指纹采集设备及显示设备
CN104157657B (zh) 影像感测器
TW202209138A (zh) 生物特徵感測裝置以及生物特徵感測群體
CN223584630U (zh) 图像传感器及其电子设备
KR20220162598A (ko) 렌즈 모듈 및 이를 포함하는 디스플레이 장치
CN116805424A (zh) 具有高纵横比金属孔径结构的光学指纹传感器
JP2008103628A (ja) 固体撮像素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06786742

Country of ref document: EP

Kind code of ref document: A1