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WO2007098119A3 - Tomographie plasmique - Google Patents

Tomographie plasmique Download PDF

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Publication number
WO2007098119A3
WO2007098119A3 PCT/US2007/004290 US2007004290W WO2007098119A3 WO 2007098119 A3 WO2007098119 A3 WO 2007098119A3 US 2007004290 W US2007004290 W US 2007004290W WO 2007098119 A3 WO2007098119 A3 WO 2007098119A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasmon
plasmon energy
determined
measurement position
paths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/004290
Other languages
English (en)
Other versions
WO2007098119A9 (fr
WO2007098119A2 (fr
Inventor
Roderick A Hyde
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Searete LLC
Original Assignee
Searete LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/355,918 external-priority patent/US7466420B2/en
Application filed by Searete LLC filed Critical Searete LLC
Priority to EP07751076A priority Critical patent/EP1984862A4/fr
Priority to KR1020087022578A priority patent/KR101371122B1/ko
Priority to JP2008555410A priority patent/JP5308166B2/ja
Publication of WO2007098119A2 publication Critical patent/WO2007098119A2/fr
Publication of WO2007098119A9 publication Critical patent/WO2007098119A9/fr
Anticipated expiration legal-status Critical
Publication of WO2007098119A3 publication Critical patent/WO2007098119A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/703—Gap setting, e.g. in proximity printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Multimedia (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

Selon l'invention, de l'énergie plasmique est produite par excitation d'une résonance plasmique au niveau d'au moins une position d'excitation sur une première surface d'une première matière, et cette énergie plasmique est détectée au niveau d'au moins une position de mesure sur cette première surface après que l'énergie plasmique se soit propagée à partir de la/des position(s) d'excitation et de la/des position(s) de mesure. Une atténuation de l'énergie plasmique est déterminée le long de plusieurs trajets entre la/les position(s) d'excitation et la/les position(s) de mesure, et des distances relatives entre la première et la seconde surface d'une seconde matière sont déterminées au niveau de plusieurs points sur au moins une des surfaces basées sur l'atténuation déterminée d'énergie plasmique le long de plusieurs trajets.
PCT/US2007/004290 2006-02-16 2007-02-16 Tomographie plasmique Ceased WO2007098119A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07751076A EP1984862A4 (fr) 2006-02-16 2007-02-16 Tomographie plasmique
KR1020087022578A KR101371122B1 (ko) 2006-02-16 2007-02-16 플라스몬 단층촬영
JP2008555410A JP5308166B2 (ja) 2006-02-16 2007-02-16 プラズモン・トモグラフィ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/355,918 US7466420B2 (en) 2006-02-16 2006-02-16 Plasmon tomography
US11/355,918 2006-02-16
US11/402,305 2006-04-11
US11/402,305 US7463359B2 (en) 2006-02-16 2006-04-11 Plasmon tomography

Publications (3)

Publication Number Publication Date
WO2007098119A2 WO2007098119A2 (fr) 2007-08-30
WO2007098119A9 WO2007098119A9 (fr) 2007-11-01
WO2007098119A3 true WO2007098119A3 (fr) 2008-12-31

Family

ID=38437931

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/004290 Ceased WO2007098119A2 (fr) 2006-02-16 2007-02-16 Tomographie plasmique

Country Status (1)

Country Link
WO (1) WO2007098119A2 (fr)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5025147A (en) * 1987-09-25 1991-06-18 Ernst Leitz Wetzlar, Gmbh Sensor for converting a distance to optical and further to electrical energy, and surface scanning apparatus using same
US20020044285A1 (en) * 2000-07-21 2002-04-18 Pedersen Henrik Chresten Coupling elements for surface plasmon resonance sensors
US20040218185A1 (en) * 2003-05-01 2004-11-04 Canon Kabushiki Kaisha Position sensor, method for detecting horizontal and vertical position, alignment apparatus including position sensor, and method for horizontal and vertical alignment
US20040228577A1 (en) * 2000-10-30 2004-11-18 Bardia Pezeshki Laser and fiber coupling control
US20050191427A1 (en) * 2003-02-21 2005-09-01 California Institute Of Technology Selective functionalization of carbon nanotube tips allowing fabrication of new classes of nanoscale sensing and manipulation tools
US20050213868A1 (en) * 2004-03-29 2005-09-29 Cunningham Brian T Photonic crystal defect cavity biosensor
US20050226579A1 (en) * 2004-04-08 2005-10-13 Yoel Fink Photonic crystal waveguides and systems using such waveguides
US20050257709A1 (en) * 2003-08-28 2005-11-24 Tony Mule Systems and methods for three-dimensional lithography and nano-indentation
US20050281996A1 (en) * 1998-06-08 2005-12-22 Stuart Harbron Novel catalysts
US6980716B1 (en) * 2001-03-30 2005-12-27 Arizona Board Of Regents Coherent evanescent wave imaging

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5025147A (en) * 1987-09-25 1991-06-18 Ernst Leitz Wetzlar, Gmbh Sensor for converting a distance to optical and further to electrical energy, and surface scanning apparatus using same
US20050281996A1 (en) * 1998-06-08 2005-12-22 Stuart Harbron Novel catalysts
US20020044285A1 (en) * 2000-07-21 2002-04-18 Pedersen Henrik Chresten Coupling elements for surface plasmon resonance sensors
US20040228577A1 (en) * 2000-10-30 2004-11-18 Bardia Pezeshki Laser and fiber coupling control
US6980716B1 (en) * 2001-03-30 2005-12-27 Arizona Board Of Regents Coherent evanescent wave imaging
US20050191427A1 (en) * 2003-02-21 2005-09-01 California Institute Of Technology Selective functionalization of carbon nanotube tips allowing fabrication of new classes of nanoscale sensing and manipulation tools
US20040218185A1 (en) * 2003-05-01 2004-11-04 Canon Kabushiki Kaisha Position sensor, method for detecting horizontal and vertical position, alignment apparatus including position sensor, and method for horizontal and vertical alignment
US20050257709A1 (en) * 2003-08-28 2005-11-24 Tony Mule Systems and methods for three-dimensional lithography and nano-indentation
US20050213868A1 (en) * 2004-03-29 2005-09-29 Cunningham Brian T Photonic crystal defect cavity biosensor
US20050226579A1 (en) * 2004-04-08 2005-10-13 Yoel Fink Photonic crystal waveguides and systems using such waveguides

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1984862A4 *

Also Published As

Publication number Publication date
WO2007098119A9 (fr) 2007-11-01
WO2007098119A2 (fr) 2007-08-30

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