WO2007097350A1 - Position measuring device and position measuring method, mobile body driving system and mobile body driving method, pattern forming device and pattern forming method, exposure device and exposure method, and device manufacturing method - Google Patents

Abstract

A position measuring device includes linear encoders (50A to 50D) having four movable scales (44A to 44D) which are secured to a wafer stage (WST) and surround a wafer (W); and head units (46A to 46D) which are corresponding to the movable scales and emit a light having a wavelength in the longitudinal direction substantially longer than that in the direction perpendicular to the longitudinal direction. The information on the position of the wafer stage (WST) in an XY plane is calculated on the basis of the results of measured by the encoders. Thereby, the position of a mobile body can be accurately measured without increasing the size.

Description

 Specification

 POSITION MEASUREMENT DEVICE AND POSITION MEASUREMENT METHOD, MOBILE BODY DRIVING SYSTEM, MOBILE BODY DRIVING METHOD, PATTERN FORMING DEVICE AND PATTERN FORMING METHOD, EXPOSURE DEVICE AND EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD

 Technical field

 The present invention relates to a position measuring apparatus and position measuring method, a moving body driving system and a moving body driving method, a pattern forming apparatus and a pattern forming method, an exposure apparatus and an exposure method, and a device manufacturing method. More specifically, a position measuring device and a position measuring method for measuring position information of the moving body, a moving body driving system and a moving body driving method for driving the moving body in a predetermined plane, and a pattern including the moving body driving system The present invention relates to a pattern forming method using a forming apparatus and a moving body driving method, an exposure apparatus equipped with a position measuring apparatus, an exposure method using the position measuring method, and a device manufacturing method using the pattern forming apparatus or the pattern forming method.

 Background art

 Conventionally, in the lithographic process in the manufacture of electronic devices (microdevices) such as semiconductor elements and liquid crystal display elements, step-and-repeat reduction projection exposure apparatuses (so-called steppers) or step-and-and-steps are used. 'Scanning type scanning projection exposure devices (so-called scanning steppers (also called scanners)) are used relatively frequently.

 In this type of exposure apparatus, for example, a wafer (or mask) pattern is transferred to a plurality of shot areas on a substrate to be exposed (hereinafter referred to as a wafer) such as a wafer or a glass plate. The wafer stage to be held is driven by, for example, a linear motor in the XY two-dimensional direction. The position measurement of the wafer stage is generally performed using a high-resolution laser interferometer with stable measurement values over a long period of time.

 [0004] However, due to the miniaturization of patterns due to the high integration of semiconductor elements, more precise stage position control is required, and now the atmosphere on the beam optical path of a laser interferometer is required. Short-term fluctuations in measured values due to temperature fluctuations are becoming difficult to ignore.

[0005] On the other hand, recently, as an encoder which is a kind of position measuring device, measurement resolution has been reduced. The same or more than the one interferometer has appeared (see, for example, Patent Document 1 and Patent Document 2 (especially description of the prior art)).

However, when an encoder is used for the wafer stage of the exposure apparatus, it is usually installed at a position far away from the exposure position force on the wafer stage (see, for example, Patent Document 2). For this reason, there was an inconvenience that the outer shape of the wafer stage became large.

 [0007] Patent Document 1: US Pat. No. 6,639,686

 Patent Document 2: JP 2004-101362 A

 Disclosure of the invention

 Means for solving the problem

 [0008] The present invention has been made under the circumstances described above. From the first viewpoint, the present invention is a position measuring apparatus that measures position information of a movable body that is movable within a predetermined plane, and the moving A first grating disposed on the body and having a periodic direction in a direction parallel to the first axis in the plane; an optical beam extending substantially elongated in a direction perpendicular to the first axis in the plane A first axis encoder head including: a first irradiation system that irradiates the first grating; and a first light receiving element that receives light from the first grating; and And a calculation device that calculates position information related to a direction parallel to the first axis of the moving body based on a photoelectric conversion signal.

 [0009] According to this, for example, the first axis encoder head can be arranged to face the first grating on the moving body, so that the optical path of the light beam can be shortened, and the moving body can be mounted on the moving body. Even if the grating is arranged at a desired position, position information relating to a direction parallel to the first axis of the moving body (hereinafter abbreviated as the first axis direction) can be obtained. Therefore, it is possible to reduce the size of the moving body, and unlike the laser interferometer, it is possible to obtain position information about the first axis direction of the moving body that is not substantially affected by fluctuation (refractive index variation). Is possible.

[0010] In this case, even if the moving body moves in a direction intersecting the first axis, for example, in a direction perpendicular to the first axis, the first irradiation system force is a direction perpendicular to the first axis in the plane. The first and second gratings on the moving body are irradiated with a substantially elongated light beam. This will allow you to It is possible to obtain position information about the first axis of a moving body that is not affected by the movement of the moving body.

 [0011] According to a second aspect of the present invention, there is provided a position measurement device that measures position information of a movable body that is movable in a direction parallel to the first and second axes within a predetermined plane, A first grating periodically disposed in a direction parallel to the first axis on the body; the first grating with respect to a direction intersecting the first axis and parallel to the second axis in the plane; And a first encoder head that irradiates the first grating with a light beam extending in the same length or longer.

 [0012] According to this, for example, the first encoder head can be arranged to face the first grating on the moving body, so that the optical path of the light beam can be shortened, and the moving body can move to the second axis. The position information about the direction parallel to the first axis of the movable body can be obtained even if the length of the first grating moves about the same direction as the length of the first grating. Therefore, it is possible to reduce the size of the moving body, and unlike the laser interferometer, position information regarding the direction parallel to the first axis of the moving body that is substantially not affected by fluctuation (refractive index change), etc. Obtainable.

 [0013] According to the third aspect of the present invention, either of the first and second position measuring devices of the present invention; and based on the measurement result of the position measuring device, the moving body is moved within the plane. And a drive device for driving the vehicle.

 [0014] According to this, since any one of the first and second position measuring devices of the present invention is provided, the position of the moving body in the first axis direction can be accurately measured, and the measurement result Based on the above, the moving body is driven in the plane by the driving device. Therefore, it is possible to drive the moving body with high accuracy in at least the first axis direction in the plane.

[0015] According to a fourth aspect of the present invention, there is provided a moving body drive system according to the present invention in which an object is placed on the moving body; and a generation device that generates a pattern to be formed on the object.

1 is a pattern forming apparatus.

[0016] According to this, the pattern generated by the pattern generation device is formed on the object driven with high accuracy by the moving body drive system of the present invention. As a result, it is possible to accurately form a pattern on the object. [0017] The present invention relates to a moving body that holds an object; one of the first and second position measuring devices of the present invention that measures position information of the moving body; and a pattern generation that generates a pattern on the object And a second pattern forming device that moves the movable body using the position measuring device.

 [0018] According to this, when the pattern generation device generates a pattern on the object, for example, the moving body that holds the object is moved using either the first or second position measurement device of the present invention. The

 [0019] According to a fifth aspect of the present invention, there is provided a step of forming a pattern on an object using either the first or second pattern forming apparatus of the present invention; and the pattern is formed A device manufacturing method comprising: a process for processing the object.

 [0020] According to a sixth aspect of the present invention, there is provided an exposure apparatus that exposes an object, the moving body that holds the object, and the first and second aspects of the present invention that measure positional information of the moving body. An exposure apparatus comprising any one of the position measuring apparatuses.

 According to this, for example, when the object is exposed, the position information of the moving body that holds the object is measured using either force of the first and second position measuring devices of the present invention.

 [0022] According to a seventh aspect of the present invention, a position measuring method for measuring position information of a movable body movable in a predetermined plane, wherein the direction parallel to the first axis in the plane is a period. The first grating disposed on the movable body as a direction is irradiated with a light beam extending substantially in the direction perpendicular to the first axis in the plane, and the first grating from the first grating is irradiated. It is a first position measurement method including a step of receiving light and measuring position information related to a direction parallel to the first axis of the movable body.

 [0023] According to this, for example, it is possible to employ a configuration in which the first grating disposed on the moving body is irradiated with the light beam from the opposite direction, so that the optical path of the light beam can be shortened. Even if the grating is arranged at a desired position on the moving body, position information regarding the first axis direction of the moving body can be obtained. Therefore, it is possible to reduce the size of the moving body, and unlike the laser interferometer, it is possible to obtain positional information about the first axis direction of the moving body that is not substantially affected by fluctuation (refractive index change). .

[0024] In this case, the moving body intersects the first axis, for example, the direction orthogonal to the first axis. Even when moving in the direction, the first grating on the moving body is irradiated with an optical beam extending substantially elongated in a direction perpendicular to the first axis in the plane. As a result, it is possible to obtain position information about the first axis direction of the moving body that is not affected by the movement of the moving body.

[0025] According to an eighth aspect of the present invention, there is provided a position measurement method for measuring position information of a movable body that is movable in a direction parallel to the first and second axes within a predetermined plane. A light beam that intersects with the first axis and extends at a length equal to or greater than that of the first grating in a direction parallel to the second axis is parallel to the first axis on the movable body. Irradiating a first grating periodically arranged in a direction, receiving light from the first grating, and measuring position information related to a direction parallel to the first axis of the moving body. This is the second position measurement method.

[0026] According to this, for example, it is possible to irradiate the first grating on the moving body with the opposing directional force optical beam, so that the optical path of the light beam can be shortened, and the moving body can be the second grating. Position information about the direction parallel to the first axis of the movable body can be obtained even if the length of the first grating is moved to the same degree as the length of the first grating in the direction parallel to the axis. Therefore, it is possible to reduce the size of the moving body, and unlike the laser interferometer, position information regarding the direction parallel to the first axis of the moving body that is substantially not affected by fluctuation (refractive index change), etc. Obtainable.

 [0027] According to the ninth aspect of the present invention, the step of measuring the position information of the moving body using either the first or second position measurement method of the present invention; And a step of driving the movable body in the plane.

 [0028] According to this, since the position information of the moving body is measured using either the first or second position measuring method of the present invention, the position of the moving body in the first axis direction is accurately measured. In addition, based on the measured position information, the moving body is driven in the plane. Therefore, the movable body can be accurately driven in a direction parallel to at least the first axis in the plane.

[0029] According to a tenth aspect of the present invention, the step of driving a moving body on which an object is placed using the moving body driving method of the present invention; the step of generating a pattern on the object; A first pattern forming method including: [0030] According to this, a pattern is generated on an object driven with high accuracy using the moving body driving method of the present invention. This makes it possible to form a pattern on the object with high accuracy.

 [0031] The present invention is a pattern formation method for forming a pattern on an object, which also has the eleventh viewpoint power, and the first and second positions of the present invention when generating a pattern on the object. This is a second pattern forming method including a step of measuring positional information of the moving body that holds the object using either! /! Of the measuring method.

[0032] According to this, for example, when generating a pattern on an object, the position information of the moving body that holds the object is measured by using either of the first and second position measurement methods of the present invention. Is done.

[0033] The present invention has a twelfth aspect of the present invention, the step of forming a pattern on the object using either the first or second pattern forming method of the present invention; and the pattern is formed A device manufacturing method comprising: a process for processing the object.

[0034] According to a thirteenth aspect of the present invention, there is provided an exposure method for exposing an object, and the movable body that holds the object using any one of the first and second position measurement methods of the present invention It is an exposure method including the process of measuring position information.

According to this, for example, when the object is exposed, the position information of the moving body that holds the object is measured using either force of the first and second position measuring methods of the present invention.

 Brief Description of Drawings

FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment.

 FIG. 2 is a diagram for explaining an encoder system and an interferometer system used in the exposure apparatus according to the embodiment.

 FIG. 3 (A) and FIG. 3 (B) are diagrams for explaining the encoder head of the encoder in FIG. 2, respectively.

 FIG. 4A and FIG. 4B are diagrams for explaining light emitted from the light source unit of the encoder head of FIG. 3, respectively.

 FIG. 5 (A) to FIG. 5 (D) are diagrams for explaining the operation of the encoder head of FIG. 3, respectively.

[FIG. 6] —A part of the control system related to the stage control of the exposure apparatus according to the embodiment is omitted. FIG.

 FIG. 7 is a view for explaining a modification of the encoder head used in the exposure apparatus according to the embodiment.

 [FIG. 8] FIG. 8 (A) is a timing chart for explaining the output signal of the encoder when the encoder head of FIG. 7 is used, and FIG. 8 (B) shows the restored signal of the encoder output signal force. It is a timing chart for explaining.

 FIG. 9 is a view showing a modification of the wafer stage used in the immersion exposure apparatus.

 BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

FIG. 1 shows a schematic configuration of an exposure apparatus 100 according to an embodiment. The exposure apparatus 100 is a step-and-scan type scanning exposure apparatus, that is, a so-called scanning stepper. As will be described later, in the present embodiment, the projection optical system PL is provided. In the following, the direction parallel to the optical axis AX of the projection optical system PL is the Z-axis direction, and in a plane perpendicular to the Z-axis direction. The direction in which the reticle and wafer are scanned relative to each other (the left-right direction in the drawing in FIG. 1) is the Y-axis direction, and the direction perpendicular to the Z-axis and the Y-axis (the direction perpendicular to the drawing in FIG. 1) is the X-axis direction. The rotation (tilt) directions around the Y-axis and Z-axis will be described as the θx, Θy, and Θz directions, respectively.

The exposure apparatus 100 includes a light source and an illumination optical system, and includes an illumination system 10 that illuminates the reticle R with illumination light (exposure light) IL, a reticle stage RST that holds the reticle R, a projection unit PU, and a wafer W. It includes a wafer stage device 12 including a wafer stage WST to be placed, a body BD on which a reticle stage RST and a projection unit PU are mounted, and a control system for these.

[0040] The illumination system 10 illuminates a slit-shaped illumination area extending in the X-axis direction on the reticle R defined by a reticle blind (masking system) (not shown) with illumination light IL with a substantially uniform illumination. . Here, as the illumination light IL, for example, ArF excimer laser light (wavelength 193 nm) is used.

[0041] Reticle stage RST is, for example, several / zm by means of an air bearing (not shown) provided on the bottom surface of reticle base 36 constituting the top plate of second column 34 described later. Supported through a degree of clearance.

 [0042] Reticle stage RST here is two-dimensionally (X-axis direction, Y-axis) in the XY plane perpendicular to optical axis AX of projection optical system PL by reticle stage drive system 11 including, for example, a linear motor. (In the direction and Θz direction), and can be driven at a speed specified in the scanning direction (Y-axis direction). The reticle stage RST may be a coarse / fine movement structure disclosed in, for example, Japanese Patent Laid-Open No. 8-130179 (corresponding to US Pat. No. 6,721,034), and the structure thereof is limited to this embodiment (FIG. 1 and the like). Not something

[0043] Position information of the reticle stage RST is measured by a reticle interferometer system including a reticle Y laser interferometer (hereinafter referred to as "reticle Y interferometer") 16y shown in FIG. As shown in FIG. 6, the reticle interferometer system actually includes a reticle Y interferometer 16y and a reticle X interferometer 16x.

 [0044] Reticle Y interferometer 16y uses a fixed mirror 14 (see Fig. 1) fixed to the side of lens barrel 40 of projection unit PU as a reference to position Y of reticle stage RST as a movable mirror (plane mirror or retro mirror). Through a reflector 15), for example, 0.5 to: Always detect with a resolution of about Lnm. At least a part of the reticle Y interferometer 16y (for example, an optical unit excluding the light source) is fixed to the reticle base 36, for example. In addition, reticle X interferometer 16x irradiates a measurement beam onto a reflecting surface that extends in the Y-axis direction, which is fixed (or formed) to reticle stage RST, and determines the X position of the reflecting surface. Then, measurement is performed with reference to a fixed mirror (not shown) fixed to the side surface of the lens barrel 40 as the X position of the reticle stage RST. The reticle interferometer system does not necessarily have to measure the position information of reticle stage RST using a fixed mirror provided in lens barrel 40.

 The X position information from reticle X interferometer 16x and the Y position information from reticle Y interferometer 16y are sent to main controller 20 (see FIG. 6).

[0046] Projection unit PU is held at a part of body BD below reticulometer stage RST in FIG. This body BD includes a first column 32 installed on the floor F of the clean room, for example, a frame caster FC, and a second column 34 fixed on the first column 32. And [0047] The frame caster FC is composed of a base plate BS placed horizontally on the floor surface F, and a plurality of, for example, three (or four) leg portions 39 (not shown in the figure) fixed on the base plate BS. The leg on the back side of the paper in 1 is not shown).

 [0048] The first column 32 is supported substantially horizontally by a plurality of, for example, three (or four) first vibration isolation mechanisms 56 fixed individually to the upper ends of the plurality of leg portions 39, respectively. A lens barrel surface plate (main frame) 38 is provided.

 [0049] The lens barrel base plate 38 is formed with a circular opening (not shown) at substantially the center thereof, and the projection unit PU is also inserted into the circular opening, and the projection unit PU is provided on the outer periphery thereof. It is held through the flange FLG. On the upper surface of the lens barrel plate 38, one end (lower end) of a plurality of, for example, three legs 41 (however, the legs on the back side of the paper in FIG. 1 are not shown) is fixed at a position surrounding the projection unit PU. And The other end (upper end) surface of each of these legs 41 is on substantially the same horizontal plane, and the above-mentioned reticle base 36 is fixed to these legs 41. In this way, the reticle base 36 is horizontally supported by the plurality of legs 41. That is, the second column 34 is configured by the reticle base 36 and the plurality of legs 41 that support the reticle base 36. The reticle base 36 is formed with an opening 36a serving as a passage for the illumination light IL at the center thereof. The second column 34 (that is, at least the reticle base 36) may be disposed on the first column 32 via a vibration isolation mechanism, or may be disposed on the base plate BS independently of the first column 32. Also good.

 [0050] Projection unit PU includes a cylindrical lens barrel 40 provided with a flange FLG, and a projection optical system PL comprising a plurality of optical elements held by lens barrel 40. In the present embodiment, the force used to place the projection unit PU on the lens barrel plate 38, as disclosed in, for example, International Publication No. 2006Z038 952, pamphlet (not shown) disposed above the projection unit PU. The projection unit PU may be suspended and supported with respect to the main frame member, the reticle base 36, or the like.

[0051] As projection optical system PL, for example, a refractive optical system including a plurality of lenses (lens elements) arranged along optical axis AX parallel to the Z-axis direction is used. The projection optical system PL is, for example, telecentric on both sides and has a predetermined projection magnification (for example, 1Z4 times or 1Z5 times). For this reason, the illumination area is illuminated by the illumination light IL from the illumination system 10. Then, the illumination light IL that has passed through the reticle R, which is arranged so that the first surface (object surface) of the projection optical system PL and the pattern surface substantially coincide with each other in the illumination region via the projection optical system PL. The above-mentioned illumination on the wafer W on which a reduced image of the circuit pattern (a reduced image of a part of the circuit pattern) is disposed on the second surface (image surface) side and the surface is coated with a resist (photosensitive agent). It is formed in an area (exposure area) conjugate to the area. Then, by synchronously driving the reticle stage RST and the wafer stage WST, the reticle R is moved relative to the illumination area (illumination light IL) in the scanning direction (Y-axis direction) and the exposure area (illumination light IL). The wafer W is moved relative to the running direction (Y-axis direction) to scan exposure of one shot area (partition area) on the wafer W, and a reticle pattern is formed on the shot area. Transcribed. That is, in the present embodiment, a pattern is generated on the wafer W by the illumination system 10, the reticle R, and the projection optical system PL, and the sensitive layer (resist layer) on the wafer W is exposed on the wafer W by the illumination light IL. The pattern is formed.

 The wafer stage device 12 includes a stage base 71 supported substantially horizontally by a plurality of (for example, three) second anti-vibration mechanisms (not shown) on the base plate BS, and above the stage base 71. A wafer stage WST arranged, a wafer stage drive system 27 for driving the wafer stage WST, and the like are provided.

 The stage base 71 also serves as a plate-like member called a surface plate, and the upper surface thereof is finished with a very high flatness and serves as a guide surface for the movement of the wafer stage WST.

[0054] Wafer stage WST is controlled by a wafer stage drive system 27 including, for example, a linear motor, a voice coil motor, etc., in the X axis direction, the Y axis direction, the Z axis direction, the 0 x direction, the 0 y direction, and the 0 _Z direction. Driven in the direction of freedom.

 As wafer stage WST, for example, a wafer stage main body driven in at least the X-axis direction, the Y-axis direction, and the 0 z-direction by a linear motor or the like, and at least Z on the wafer stage main body by a voice coil motor or the like. It is also possible to adopt a structure with a wafer table that is micro-driven in the axial direction, 0x direction, and 0y direction.

 [0056] Wafer W is mounted on wafer stage WST via a wafer holder (not shown), and UE and W are fixed by, for example, vacuum chucking (or electrostatic chucking).

[0057] In addition, positional information in the XY plane (moving plane) of wafer stage WST is shown in FIG. The encoder unit system including the head units 46B, 46C, 46D and the moving scales 44B, 44C, 44D, etc., and the wafer laser interferometer system (hereinafter referred to as the “wafer interferometer system”) 18 are configured to enable measurement. Yes. The configuration of the wafer stage WST encoder system and the wafer interferometer system 18 will be described in detail below.

 [0058] On the upper surface of wafer stage WST, as shown in FIG. 2, four movement scales 44A to 44D are fixed so as to surround wafer W. More specifically, the moving scales 44A to 44D also have the same material force (for example, ceramics or low thermal expansion glass), and a reflective diffraction grating having a longitudinal direction as a periodic direction is formed on the surface thereof. ing. This diffraction grating is formed with a pitch of 4 μm to 138 nm, for example, with a 1 μm pitch in this embodiment. In FIG. 2, for the convenience of illustration, the pitch of the lattice is shown much wider than the actual pitch.

 [0059] Moving scales 44A and 44C have a longitudinal direction that coincides with the Y-axis direction in FIG. 2 and passes through the center of wafer stage WST (considering moving mirrors 17X and 17Y), and a center line parallel to the Y-axis direction. The diffraction gratings formed on the moving scales 44A and 44C are also symmetrically arranged with respect to the center line. These moving scales 44A and 44C are used for measuring the position of wafer stage WST in the Y-axis direction because the diffraction gratings are periodically arranged in the Y-axis direction.

 [0060] In addition, the moving scales 44B and 44D have the longitudinal direction coincident with the X-axis direction in FIG. 2 and pass through the center of the wafer stage WST (considered by moving mirrors 17X and 17Y) and are parallel to the X-axis direction. The diffraction gratings arranged symmetrically with respect to the center line and formed on the moving scales 44B and 44D are also symmetrical with respect to the center line. These movement scales 44B and 44D are used for measuring the position of the wafer stage WST in the X-axis direction because the diffraction gratings are periodically arranged in the X-axis direction.

 [0061] Note that, in FIG. 1, the force in which the wafer W is exposed above the moving scale 44C is shown for the sake of convenience. In practice, the moving scales 44A to 44D The upper surface is located at the same height as or above the upper surface of the wafer W! /.

On the other hand, as shown in FIGS. 1 and 2, four encoder head units (hereinafter abbreviated as “head units”) are shown surrounding the bottom end of the projection unit PU from all sides. ) Four 6A to 46D are arranged so as to intersect with the corresponding moving scales 44A to 44D, respectively. The head units 46A to 46D are not shown in FIG. 1 from the viewpoint of avoiding complication of the drawing, but are actually fixed in a suspended state to the lens barrel surface plate 38 via a support member.

 [0063] The head units 46A and 46C have an X-axis direction orthogonal to the longitudinal direction (Y-axis direction in FIG. 2) of the corresponding moving scales 44A and 44C on the −X side and + X side of the projection unit PU, respectively. They are arranged in the longitudinal direction and symmetrically with respect to the optical axis AX of the projection optical system PL. In addition, the head units 46B and 46D extend in the Y-axis direction orthogonal to the longitudinal direction (X-axis direction in Fig. 2) of the corresponding moving scales 44B and 44D on the + Y side and -Y side of the projection unit PU, respectively. It is arranged symmetrically with respect to the optical axis AX of the projection optical system PL.

 [0064] Each of the head units 46A to 46D has the same configuration and operation. Therefore, the head unit 46A will be described as a representative.

 [0065] As an example, the head unit 46A is arranged at a predetermined interval (for example, almost no gap !, pitch) along its longitudinal direction, as shown in FIGS. 3 (A) and 3 (B). A light source unit 47 having a plurality of light sources 48 (light source group), a light receiving element PD, and three fixed-side diffraction gratings, that is, first and third index scales 49a to 49c! /, The

 [0066] Each light source 48 emits laser light having a wavelength of 850 nm, for example, substantially vertically downward (-Z direction). Therefore, in the present embodiment, as shown in FIG. 4A and FIG. 4B as an example, the light beam B m force extending substantially in the X axis direction from the light source unit 47 is substantially vertically downward. It is injected towards. As the light source 48, for example, a laser diode (semiconductor laser) or the like is used.

[0067] The first index scale 49a is disposed below the light source unit 47 (on the −Z side), and has a pitch of, for example, 4 m to 138 nm with the Y axis direction as a periodic direction, for example, 0.98 ηι ( This is a transmission type phase grating consisting of a plate in which a diffraction grating with a pitch (slightly different from 1 μm) is formed in almost all the longitudinal direction (X-axis direction). Therefore, when the light beam Bm force emitted from the light source unit 47 is irradiated onto the index scale 49a, a plurality of diffracted lights of the light beam Bm are generated. Figure 5 (A) shows the first of the diffracted lights. + 1st order diffracted light Bal and 1st order diffracted light Ba2 generated at index scale 49a of 1 are shown.

 [0068] The second index scale 49b has a diffraction grating of, for example, 0.49 μm pitch (half pitch of the index scale 49a) having a periodic direction in the Y-axis direction in the longitudinal direction (X-axis direction). It is a transmission type phase grating composed of a plate formed in almost the entire range. The index scale 49b is arranged at a position where the + first-order diffracted light Bal generated by the index scale 49a can enter. The third index scale 49c is a transmission type phase grating composed of a plate on which a diffraction grating similar to the index scale 49b is formed. The third index scale 49c is generated by the index scale 49a. Is located.

 [0069] The index scale 49b diffracts the + first-order diffracted light Ba 1 generated by the index scale 49a to generate a first-order diffracted light Bb, and the first-order diffracted light Bb travels toward the moving scale 44A. The index scale 49c diffracts the first-order diffracted light Ba2 generated by the index scale 49a to generate + first-order diffracted light, and the + first-order diffracted light is directed to the moving scale 44A.

 Here, the first-order diffracted light generated by the index scale 49b and the + first-order diffracted light generated by the index scale 49c are incident on the same position (region) on the moving scale 44A. FIG. 5 (B) shows a side view of FIG. 5 (A) viewed from the + Y side.

 [0071] On the surface of the moving scale 44A, a reflection type diffraction grating having the periodic direction in the Y-axis direction as described above is formed. This moving scale 44A diffracts the first-order diffracted light generated by the index scale 49b to generate + first-order diffracted light, and diffracts the first-order diffracted light generated by the third index scale 49c—first-order diffracted light Is generated. These diffracted lights are received by the light receiving element PD positioned above the moving scale 44A (below the index scale 49a) while interfering with each other.

[0072] In this case, the grating pitch of the index scale 49a and the grating pitch of the moving scale 44A are slightly different from each other as described above. As an example, as shown in FIG. Can be generated on the surface. In this case, as shown in Fig. 5 (D) as an example, the light receiving element PD is divided into two parts consisting of two partial light receiving elements (PDa, PDb). By using the light receiving element, for example, a sinusoidal signal is output from the partial light receiving element PDa, and a cos wave signal is output from the partial light receiving element PDb. That is, a two-phase sine wave can be obtained. To obtain a two-phase sine wave, see, for example, Yanao, Watanabe: “Recent Photoelectric Encoder Technology and Applications”, Optical Technology Contact, Voll9. No5 (hereinafter referred to as “Yanao Bunri” for convenience). As described, there are various methods, and any method may be used.

 [0073] Note that the grating pitch of the index scale 49a and the moving scale 44A does not necessarily have to be slightly different. For example, the grating pitch of the index scale 49a and the moving scale 44A is the same (for example, 1 μm). Also good. In this case, the lattice pitch of the index scales 49b and 49c may be set to 0. In any case, the photoelectric conversion signal of the interference light received by the light receiving element PD (not necessarily a two-divided light receiving element) is supplied to the main controller 20 as an output signal of the encoder head 46A.

 [0074] Main controller 20 uses the method described in the above-mentioned Yanagio literature, or other known techniques, for example, to obtain a 90 ° phase relative to each other obtained based on the output signal of the light-receiving element PD force. Two periodic signals with different values (for example, sin wave and cos wave) are detected. From the relationship between the amplitude and phase of the two signals, the relative positional relationship between the encoder head 46A and the moving scale 44A and the relative Calculate the direction of motion. That is, main controller 20 calculates position information regarding the Y-axis direction of moving scale 44A (wafer stage WST) based on the output signal of light receiving element PD. As described above, in this embodiment, the Y linear encoder (hereinafter referred to as “encoder” where appropriate) measures the position information (movement amount and movement direction) of the wafer stage WST in the Y-axis direction using the head unit 46A and the movement scale 44A. 50A (See Fig. 2 and Fig. 6).

Similarly, the head unit 46B, together with the movement scale 44B, measures the position information (movement amount and movement direction) of the wafer stage WST in the X-axis direction (hereinafter referred to as “encoder” as appropriate). Configure 50B (see Figure 2 and Figure 6). The head unit 46C, together with the movement scale 44C, constitutes a Y linear encoder 50C (see FIGS. 2 and 6) that measures the Y-axis direction (movement amount and movement direction) of the wafer stage WST. The head unit 46D, along with the moving scale 44D, is in the X-axis direction of the wafer stage WST. Configure the X linear encoder 50D (see Fig. 2 and Fig. 6) that measures the amount of movement (movement amount and direction). Output signals of these encoders 50B to 50D are supplied to the main controller 20. Main controller 20 uses Y linear encoders 50A and 50C and X linear encoders 50B and 50D based on the output signals of wafer stage WST in the Y-axis direction and Z or X-axis position information. In addition to this, position information about the Θz direction, that is, rotation information about the Z axis (showing) is also calculated. In this embodiment, the force used to suspend and support the four head units 46A to 46D on the lens barrel surface plate 38 is projected onto the main frame member or the reticle base 36 as described above. When the unit PU is suspended and supported, for example, the head units 46A to 46D may be suspended and supported integrally with the projection unit PU, or a main frame member or reticle independently of the projection unit PU. Four head units 46A to 46D may be provided on the measurement frame supported by being suspended from the base 36. In the latter case, the projection unit PU need not be suspended and supported.

 In addition, as shown in FIG. 1, the position information of wafer stage WST in the XY plane is a wafer laser interferometer system (hereinafter referred to as a length measuring beam) that irradiates a moving mirror 17 fixed to wafer stage WST. (Referred to as “wafer interferometer system”) 18, for example, is constantly detected with a resolution of about 0.5 to 1 nm. At least a part of the wafer interferometer system 18 (for example, an optical unit excluding the light source) is fixed to the lens barrel surface plate 38 in a suspended state. Note that at least a part of the wafer interferometer system 18 may be suspended and supported integrally with the projection unit PU, or may be provided on the above-described measurement frame.

 [0077] Here, on wafer stage WST, actually, as shown in Fig. 2, Y moving mirror 17Y having a reflecting surface perpendicular to the Y-axis direction which is the scanning direction, and the non-scanning direction A force provided with an X moving mirror 17X having a reflecting surface orthogonal to the X-axis direction is shown as a moving mirror 17 in FIG.

 The wafer interferometer system 18 includes three interferometers, a wafer Y interferometer 18Y and two wafer X interferometers 18X and 18X, as shown in FIG. Of these, the wafer Y interferometer (

 1 2

(Hereinafter abbreviated as “Y interferometer”) As shown in FIG. 2, 18Y includes the optical axis AX (the center of the exposure area) of the projection optical system PL and the detection center of the alignment system (not shown). Y A multi-axis interferometer having a plurality of measuring axes including two measuring axes that are symmetric with respect to an axis parallel to the axis (center axis) is used. As shown in Fig. 2, Y interferometer 18Y passes through the projection center of projection optical system PL (optical axis AX, see Fig. 1) and the linear force parallel to the Y axis is also the same distance—the X side and the + X side. The two measurement beams are projected onto the moving mirror 17Y along the length measurement axis in the Y-axis direction, and the reflected light is received, so that the wafer stage WST Y at the measurement beam irradiation point is received. The position information in the axial direction is detected with reference to the reflecting surface of the Y fixed mirror fixed to the side of the lens barrel of the projection optical system PL. This Y interferometer also measures rotation information (pitching) in the 0X direction and rotation information (showing) in the 0z direction of the wafer stage WST.

 [0079] Wafer X interferometer 18X is an axis parallel to the X axis (center axis) that passes through optical axis AX of projection optical system PL.

 1

 The measurement beam is irradiated onto the moving mirror 17X along two measurement axes that are symmetrical with respect to (). This wafer X interferometer 18X is fixed to the side of the lens barrel 40 of the projection unit PU.

 1

 The position information of the reflecting surface of the movable mirror 17X with respect to the reflecting surface of the mirror is measured as the X position of the wafer stage WST. The X interferometer 18X also measures rotation information (rolling) of the wafer stage WST in the Θ y direction.

[0080] Wafer X interferometer 18X passes through the detection center of the alignment system (not shown) and is parallel to the X axis.

 2

 The measurement beam is irradiated onto the movable mirror 17X along the length measurement axis, and the position information of the reflective surface of the movable mirror 17X with reference to the reflective surface of the fixed mirror fixed to the side of the alignment system is used as the wafer stage WST. Measure as X position.

In FIG. 1, X interferometers 18X and 18X and Y interferometer 18Y are typically wafer interferometers.

 1 2

 A fixed mirror for measuring the position in the X-axis direction and a fixed mirror for measuring the position in the Y-axis direction are typically shown as a fixed mirror 57. In addition, the alignment system and the fixed mirror fixed thereto are not shown.

In this embodiment, the wafer X interferometer 18X and the wafer Y interferometer 18Y are used for calibration of an encoder system used at the time of wafer exposure operation, and the UE, X interferometer 18X and wafer Y interferometer are used. 18Y in total is used for mark detection by alignment system

 2

 Used. In addition, wafer X interferometer 18X is multi-axis interference in the same way as wafer X interferometer 18X.

 twenty one

In addition to the X position of the wafer stage WST, rotation information (showing and mouth) One ring) may be measured. Further, for example, instead of the movable mirrors 17X and 17Y, the end surface of the wafer stage WST may be mirror-finished to form a reflective surface (corresponding to the reflective surface of the movable mirrors 17X and 17Y). Further, the wafer interferometer system 18 does not necessarily have to measure the position information of the wafer stage WST using the projection unit PU and a fixed mirror provided in the alignment system.

 [0083] Measurement result of wafer Y interferometer 18Y, wafer X interferometer 18X and wafer X interferometer 18X

 1 2

 Is supplied to the main controller 20.

 FIG. 6 is a block diagram with a part of the control system related to the wafer stage control of the exposure apparatus 100 of the present embodiment omitted. The control system in FIG. 6 includes a so-called microcomputer (or workstation) consisting of a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), etc. The main control unit 20 is configured mainly to control the system.

 In the exposure apparatus 100 configured as described above, for example, EGA (Hen Hansd 'Global) disclosed in, for example, Japanese Patent Laid-Open No. 61-44429 and the corresponding US Pat. No. 4,780,617. When performing wafer alignment using the (alignment) method, the position of the wafer stage WST is managed by the main controller 20 based on the measurement values of the wafer interferometer system 18 as described above. For example, during the exposure operation, the position of wafer stage WST is managed by main controller 20 based on the measurement results of encoders 50A to 50D. Note that the position of wafer stage WST may be managed based on the measurement values of encoders 50A to 50D even during the wafer alignment operation. In addition, when managing the position of the wafer stage WST based on the measurement values of the encoders 50A to 50D, at least one measurement value of the wafer interferometer system 18 (for example, position information in the Z axis, θ X, and Θ y directions) is stored. You may use together.

 Therefore, in the present embodiment, the position measurement system used for position measurement in the χγ plane of the wafer stage after the wafer alignment operation is completed and before the exposure is started is the wafer interferometer system 18 (ie, Wafer Y interferometer 18Y and wafer X interferometer 18X) to encoder 5

 2

The switching operation of the position measurement system for switching from 0A to 50D is performed by the main controller 20 in a predetermined procedure. In exposure apparatus 100 of the present embodiment, reticle alignment is performed using a reticle alignment system, a reference mark plate on wafer stage WST, an alignment system (both not shown), and the like, as in a normal scanning stepper. A series of operations such as baseline measurement of alignment system (including the correspondence between reticle coordinate system and wafer coordinate system) is performed. During these series of operations, position control of reticle stage RST and wafer stage WST is performed based on the measured values of interferometers 16y and 16x and interferometers 18X, 18X and 18Y.

 1 2

 The In reticle alignment, baseline measurement, etc., position control of reticle stage RST and wafer stage WST is performed based only on the measurement values of the encoder mentioned above or the measurement values of both the interferometer and encoder. OK!

Next, main controller 20 performs wafer exchange on wafer stage WST (if there is no wafer on wafer stage WST) using a wafer loader (transport device) (not shown). For example, EGA wafer alignment is performed using the alignment system for the wafer. By this wafer alignment, the arrangement coordinates of a plurality of shot areas on the wafer on the alignment coordinate system (that is, position information in the X-axis and Y-axis directions) are obtained.

 [0089] After that, the position measurement system is switched, and the position information of each shot area on the wafer obtained by the EGA method by the main controller 20, the baseline and the encoders 50A to 50D previously measured. Based on the measured values of the wafer stage! /, Based on the measurement values of the wafer stage WST and based on the measured values of the interferometers 16y and 16x! Step-and-scan exposure is performed in the same procedure as the stepper, and the pattern of the reticle R is transferred to each of a plurality of shot areas on the wafer.

[0090] As described above, according to the present embodiment, the head units 46A to 46D of the encoders 50A to 50D irradiate the moving scales 44A to 44D on the wafer stage WST from directly above, so that an optical beam is irradiated. The optical path length of the light beam can be made much shorter than the optical path length of the measurement beam of the laser interferometer. Further, since the head unit also irradiates the moving scale with a light beam with a direct upward force, it is possible to employ an arrangement in which the moving scale 44A to 44D force surrounds the wafer W in the vicinity of the wafer W. Therefore, miniaturization of wafer stage WST In addition, unlike the laser interferometer, the position information in the XY plane of wafer stage WST (including rotation information in the 0 z direction) can be obtained without being affected by fluctuations (refractive index change) substantially. It can be obtained with high accuracy.

 [0091] Wafer stage WST force Even if the wafer stage WST force moves in the direction crossing the Y axis, for example, in the X axis direction, a light beam extending substantially elongated in the X axis direction from the irradiation system of the head units 46A and 46C Since the upper moving scales 44A and 44C are respectively irradiated, the main controller 20 determines the position information (and Y-axis position of the wafer stage WST based on the output signals of the head units 46A and 46C (encoders 50A and 50C). 0 rotation information in the z direction). Similarly, even if the wafer stage WST force moves in a direction crossing the X axis, for example, in the Y axis direction, the irradiation system force of the head units 46B and 46D is substantially elongated in the Y axis direction. Therefore, the main controller 20 determines the position information (and Θz) of the wafer stage WST in the X-axis direction based on the output signals of the head units 46B and 46D (encoders 50B and 50D). Rotation information).

 In this embodiment, the index scale 49a and the moving scales 44A to 44D each having a diffraction grating having a pitch of approximately 1 μm using a light source having a wavelength of 850 nm, and the index scale having a pitch of 1Z2 are used. 49b and 49c are used to configure the reflective three-grating encoder (diffraction interference method) as described above, so that the resolution is the same as or higher than that of the laser interferometer in the XY plane of the wafer stage WST. Position information (including rotation information in the 0 z direction) can be accurately measured. As described above, by appropriately determining the period (grating pitch) of the moving scales 44A to 44D (grating) in consideration of the wavelength of the light beam, it becomes possible to measure with the same resolution as a laser interferometer. .

 Further, according to the present embodiment, at least during exposure, position information in the XY plane of wafer stage WST can be accurately obtained using encoders 50A to 50D as described above. Therefore, main controller 20 can accurately drive wafer stage WST in the XY plane via wafer stage drive system 27 based on this measurement result.

[0094] According to the present embodiment, reticle stage RST and wafer stage WST are By synchronously moving in the direction, a pattern is generated on the wafer W by the illumination system 10, the reticle R, and the projection optical system PL, and the sensitive layer (resist layer) on the wafer W is exposed with the pattern. This makes it possible to form a pattern on the wafer W with high accuracy.

In the present embodiment, each of the head units includes a plurality of light sources 48 of the light source unit 47.

 Although the case where the light beam Bm elongated in the X-axis direction or the Y-axis direction is formed by the (light source group) has been described, the present invention is not limited to this. For example, an optical element such as a cylindrical lens (beam expander) is used to shape a laser beam emitted from a single light source, so that the light beam extends substantially in the X-axis direction or Y-axis direction. It is also possible to form a laser beam by shaping the laser light emitted by multiple light source forces with one or more cylindrical lenses, etc., and connecting the shaped laser beams in the X-axis direction, Alternatively, a light beam extending elongated in the Y-axis direction may be formed. In the former, only one light source of the light source unit 47 is required, and in the latter, the light source unit 47 has a plurality of light sources discretely arranged in the longitudinal direction, and the number of light sources is smaller than that in FIG. That's it.

 Alternatively, instead of the head unit 46A, as shown in FIG. 7 as an example, a light source 48 and a light beam (laser light) emitted from the light source 48 are converted into an XZ plane (Z axis and X axis). The deflection optical element 50 (for example, a galvanometer mirror) for scanning the light beam in the X-axis direction in the XY plane and the light receiving element PD. An existing head unit may be used. That is, a light beam extending substantially in the X-axis direction may be formed by the scanned light beam. In this case, as shown in FIG. 8A as an example, the signal output from the light receiving element PD is intermittent, but if the scanning frequency of the light beam is sufficiently high compared to the movement of the wafer stage WST. The encoder signal Se can be recovered by techniques such as peak hold (see Fig. 8 (B)).

[0097] The other head units 46B to 46D have the same configuration as that shown in Fig. 8A, and are light beams extending substantially in the X-axis direction or the Y-axis direction depending on the scattered light beam. It is also good to form. When forming a light beam that extends substantially in the Y-axis direction, the light beam (laser light) emitted from the light source 48 is converted into a YZ plane (a plane that includes the Z-axis and the Y-axis). Of course, the light beam is scanned in the Y-axis direction in the XY plane by deflecting it within a predetermined angle range. When a head unit that scans the light beam in the X-axis or Y-axis direction in the XY plane is used, the cross-sectional shape of the light beam in the XY plane is, for example, a spot shape or a line extending in the scanning direction. The shape is good.

 In short, the light beam force extending substantially elongated in the direction orthogonal to the measurement direction in the head units 46A to 46D may be emitted from each head unit.

 In the above embodiment, the case where the light receiving element PD of the head unit is a single light receiving element has been described. However, the present invention is not limited to this, and a plurality of light receiving elements are arranged in the longitudinal direction of each head unit. Also good. In this case, a plurality of light receiving elements may be connected in parallel. Further, a plurality of light receiving elements may be used by switching according to the position of wafer stage WST.

 [0100] In the above embodiment, the force described in the case of using a three-grating diffraction interference encoder as the encoders 50A to 50D is not limited to this. For example, the index scale 49b, Instead of 49c, an encoder with two reflecting mirrors, or an encoder that divides the light from the light source with an optical element such as a beam splitter may be used instead of the index scale 49a. Alternatively, for example, an encoder provided with a light reflection block as disclosed in JP-A-2005-114406 may be used.

[0101] In the above embodiment, the pair of moving scales 44A and 44C used for measuring the position in the Y-axis direction, the pair of moving scales 44B and 44D used for measuring the position in the X-axis direction, and the 1S wafer stage WST Correspondingly, a pair of head units 46A and 46C are arranged on one side and the other side of the projection optical system PL in the X-axis direction, and a pair of head units 46B and 46D are arranged on the projection optical system PL. The case where it is arranged on one side and the other side in the Y-axis direction is illustrated. However, not limited to this, only one of the moving scales 44A and 44C for measuring the position in the Y-axis direction and the moving scales 44B and 44D for measuring the position in the X-axis direction is not a pair of force but only one. The wafer stage WST may be provided, or at least one of the pair of head units 46A and 46C and the pair of head units 46B and 46D may be provided instead of the pair. good. Further, the extending direction of the moving scale and the extending direction of the head unit are orthogonal to each other as in the X-axis direction and the Y-axis direction of the above embodiment. It is not limited to the direction.

 [0102] In the above-described embodiment, the movable scales 44A to 44D have a reflection type diffraction grating formed on the surface of a plate member made of, for example, ceramics or low thermal expansion glass. A reflective diffraction grating may be formed directly on the top surface of the WST. Further, the reflective diffraction grating may be covered with a protective member (for example, a thin film or a glass plate) that can transmit the light beam Bm from the head units 46A to 46D to prevent the diffraction grating from being damaged. Further, in the above embodiment, the force that the reflection type diffraction grating is provided on the upper surface of the wafer stage WST substantially parallel to the XY plane, for example, the reflection type diffraction grating may be provided on the lower surface of the wafer stage WST. In this case, the head units 46A to 46D are disposed on the stage base 71, for example, which is opposed to the lower surface of the wafer stage WST. Furthermore, although the wafer stage WST is moved in the horizontal plane in the above embodiment, it may be moved in a plane (for example, a ZX plane) intersecting the horizontal plane. If reticle stage RST moves two-dimensionally, an encoder system with the same configuration as the encoder system described above may be provided to measure the position information of reticle stage RST.

 In the above embodiment, the wafer interferometer system 18 has a direction of 5 degrees of freedom (X axis, Y axis,

It is assumed that the position information of wafer stage WST can be measured with respect to (θ χ, Θ y, and Θ z directions), but the position information in the Z-axis direction can also be measured. In this case, at least during exposure operation, the position of wafer stage WST is controlled using the measurement values of the encoder system and the measurement values of wafer interferometer system 18 (including at least position information in the Z-axis direction). Also good. This wafer interferometer system 18 is disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-323404 (corresponding to US Pat. No. 7,116,401) and Japanese Patent Publication No. 2001-513267 (corresponding to US Pat. No. 6,208,407). As shown, a reflective surface inclined at a predetermined angle (for example, 45 degrees) with respect to the XY plane is provided on the side surface of the wafer stage WST, and the measurement beam is passed through the reflective surface, for example, a lens barrel surface plate 38. Irradiates the reflective surface provided in the aforementioned measurement frame, etc., and measures the position information of wafer stage WST in the Z-axis direction. In the wafer interferometer system 18, by using a plurality of measurement beams, position information in the θ X direction and the Z or Θ y direction can be measured in addition to the Z axis direction. In this case, the θ X direction and the Z or Θ y direction irradiated to the moving mirror 17 of the wafer stage WST A measurement beam for measuring position information may not be used.

 [0104] Further, for example, as disclosed in JP-A-10-214783 and the corresponding US Pat. No. 6,341,007, and International Publication No. 98Z40791 and the corresponding US Pat. No. 6,262,796. In addition, the above-described encoder system (Fig. 2) can also be used in a twin wafer stage type exposure apparatus that can perform exposure and measurement operations (for example, mark detection by an alignment system) almost in parallel using two wafer stages. Can be used to control the position of each wafer stage. Here, not only during the exposure operation but also during the measurement operation, the position and position of each wafer stage can be set by using the encoder system (Fig. 2) as it is by setting the arrangement and length of each head unit appropriately. Force that can be controlled In addition to the head units (46A to 46D) described above, a head unit that can be used during the measurement operation may be provided. For example, four head units arranged in a cross shape with the alignment system as the center are provided. During the above measurement operation, the position information of each wafer stage WST is determined by these head units and the corresponding moving scale (46A to 46D). It is also possible to measure. In an exposure apparatus of the twin wafer stage system, two or four moving scales (Fig. 2) are provided on two wafer stages, respectively, and when the exposure operation of a wafer placed on one wafer stage is completed, By exchanging with one of the wafer stages, the other wafer stage on which the next wafer on which the mark detection is performed at the measurement position is placed at the exposure position. In addition, the measurement operation performed in parallel with the exposure operation is not limited to the detection of a mark such as a wafer by an alignment system. Instead of or in combination with it, for example, wafer surface information (step information, etc.) It is also possible to perform detection.

[0105] In the above embodiment, as disclosed in, for example, International Publication No. 2005Z074014, International Publication No. 1999Z23692, US Patent No. 6,897,963, etc. A measurement stage with measurement members (reference marks, sensors, etc.) is provided, and the measurement stage is placed directly under the projection optical system PL by exchanging with the wafer stage during wafer exchange operations, etc., and the characteristics of the exposure apparatus (for example, projection) It is also possible to measure optical imaging characteristics (wavefront aberration, etc., illumination IL polarization characteristics, etc.). In this case, a moving scale is also arranged on the measurement stage, and the encoder system described above is used. The position of the measurement stage may be controlled using a system. Further, during the exposure operation of the wafer placed on the wafer stage, the measurement stage is retracted to a predetermined position without interfering with the wafer stage, and is moved between the retracted position and the exposure position. For this reason, even at the retracted position or during the movement of the retracted position and the exposure position from one to the other, as with the wafer stage, the moving range of the measurement stage is considered and the position by the encoder system is taken into account. It is preferable to set the arrangement, length, etc. of each head unit so that measurement cannot be disabled and position control of the measurement stage is not cut off, or to provide a head unit different from these head units. Alternatively, when the position control of the measurement stage by the encoder system is cut off at the retracted position or during the movement, a measurement stage using a measurement device (for example, an interferometer, an encoder, etc.) other than the encoder system is used. It is preferable to do position control.

In the above embodiment, the case where the present invention is applied to a scanning stepper has been described. However, the present invention is not limited to this, and a projection exposure apparatus (stepper) using a step-and-repeat method is used. The present invention may be applied to a static exposure apparatus. Even in the case of a stepper, etc., the position of the stage on which the object to be exposed is mounted is measured by an encoder, which is different from the case where the position of the stage is measured using an interferometer. The generation of measurement errors can be made almost zero. The present invention can also be applied to a step-and-stitch exposure apparatus, a proximity exposure apparatus, or a mirror projection aligner that synthesizes a shot area and a shot area.

[0107] Further, the projection optical system PL in the exposure apparatus of the above embodiment may be not only a reduction system but also an equal magnification and an enlargement system, and not only a refraction system but also a reflection system or a catadioptric system. The projected image may be either an inverted image or an erect image. Furthermore, the exposure area irradiated with the illumination light IL via the projection optical system PL is a force that is an on-axis area including the optical axis AX within the field of view of the projection optical system PL. For example, as disclosed in WO 2004Z107011 In addition, an optical system (reflection system or catadioptric system) having a plurality of reflecting surfaces and forming an intermediate image at least once is provided in a part thereof, and has a single optical axis, so-called in-line type reflection. Like the refraction system, the exposure area has the optical axis AX. It may be an ophakisis area not included. Further, the above-mentioned illumination area and exposure area are not limited to the force that the shape is rectangular, and may be, for example, an arc, a trapezoid, or a parallelogram.

 [0108] The illumination light IL is not limited to ArF excimer laser light (wavelength 193 nm), but is also true ultraviolet light such as KrF excimer laser light (wavelength 248 nm) or F laser light (wavelength 157 nm).

 2

 Sky ultraviolet light may be used. For example, as disclosed in WO 1999Z46835 pamphlet (corresponding US Pat. No. 7,023,610) as a vacuum ultraviolet light, a DFB semiconductor laser or a fiber laser force is oscillated in the infrared or visible single wavelength. For example, the laser light may be amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and then converted into ultraviolet light using a nonlinear optical crystal.

 [0109] Needless to say, the illumination light IL of the exposure apparatus is not limited to light having a wavelength of lOOnm or longer, and light having a wavelength of less than lOOnm may be used. For example, in recent years, in order to expose a pattern of 70 nm or less, EUV (Extreme Ultraviolet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm) is generated using an SOR or a plasma laser as a light source, and the exposure is performed. An EUV exposure system using an all-reflection reduction optical system designed under a wavelength (for example, 13.5 nm) and a reflective mask is being developed. In this apparatus, since a configuration in which scanning exposure is performed by synchronously scanning the mask and the wafer using arc illumination is conceivable, the present invention can be suitably applied to a powerful apparatus. In addition, the present invention can also be applied to an exposure apparatus that uses a charged particle beam such as an electron beam or an ion beam.

[0110] Further, for example, WO99Z49504 pamphlet, WO2004 / 053955 pamphlet (corresponding US Patent Application Publication No. 2005Z0252506), US Patent No. 6,952,253, European Patent Application Publication No. 1420298. Projection optics disclosed in WO 2004Z055803, Pamphlet, WO 2004,057590, FLAT, U.S. Patent Application Publication No. 2006Z0231206, U.S. Patent Application Publication No. 2005Z0280 791, etc. The present invention can also be applied to an immersion exposure apparatus in which a liquid (for example, pure water) is filled between the system PL and the wafer. In such a case, for example, as shown in FIG. 9, weno, stage WST (or wafer table) The liquid repellent plate WRP provided on the upper surface of WTB) may be made of, for example, glass having a low thermal expansion coefficient, and a scale pattern (diffraction grating) may be directly formed on the glass. Alternatively, the diffraction grating may be formed using glass as a wafer table. In the immersion type exposure apparatus including the wafer stage (or measurement stage) having the moving scale (FIG. 2) of the above embodiment, it is preferable to form a liquid repellent film on the surface of the moving scale.

 Further, in the above-described embodiment, force using a light transmission type mask (reticle) in which a predetermined light shielding pattern (or phase pattern “dimming pattern”) is formed on a light transmission substrate. Instead, as disclosed in, for example, U.S. Pat.No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. (It is also called a variable shaping mask, active mask, or image generator. For example, it includes DMD (Digital Micro-mirror Device), which is a kind of non-light emitting image display device (spatial light modulator)). ! ヽWhen a powerful variable mask is used, the stage on which the wafer or glass plate is mounted is scanned with respect to the variable mask, so that the position of the stage is measured using an encoder. Good.

 [0112] Further, as disclosed in, for example, pamphlet of International Publication No. 2001Z035168, an exposure apparatus (lithography) that forms line 'and' space pattern on wafer W by forming interference fringes on wafer W. The present invention can also be applied to a system. Furthermore, as disclosed in, for example, JP-T-2004-519850 (corresponding to US Pat. No. 6,611,316), two reticle patterns are synthesized on a wafer via a projection optical system. The present invention can also be applied to an exposure apparatus that performs double exposure of one shot area on a wafer almost simultaneously by multiple scanning exposures.

 [0113] It should be noted that an object (an object to be exposed to which an energy beam is irradiated) whose pattern is to be formed in the above embodiment and the modification is not limited to a wafer, but a glass plate, a ceramic substrate, a mask blank, or a film. Other objects such as members may be used. Further, the shape of the object is not limited to a circle but may be other shapes such as a rectangle.

[0114] The use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, for example, an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, an organic It can also be widely applied to exposure equipment for manufacturing EL, thin-film magnetic heads, image sensors (CCD, etc.), micromachines, and DNA chips. In addition, glass substrates or silicon wafers are used to manufacture reticles or masks used in light exposure equipment, EUV exposure equipment, X-ray exposure equipment, electron beam exposure equipment, etc., which are made only of micro devices such as semiconductor elements. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern.

[0115] The pattern forming apparatus of the present invention is not limited to an exposure apparatus that forms a pattern on an object by exposure with an energy beam, and the moving body drive system of the present invention in which the object is placed on the moving body, and the object What is necessary is just to provide the pattern generation apparatus which produces | generates a pattern. For example, a pattern forming apparatus provided with a pattern generating apparatus similar to an element manufacturing apparatus provided with an ink jet type functional liquid applying apparatus similar to the ink jet head group disclosed in Japanese Patent Application Laid-Open No. 2004-130312, etc. The present invention is applicable. The inkjet head group disclosed in the above publication discloses a predetermined functional liquid (for example, a metal-containing liquid, a photosensitive material, etc.) discharged from a nozzle (discharge port) onto a substrate (for example, PET, glass, silicon, paper, etc.). A plurality of inkjet heads to be applied are provided. Therefore, the above-mentioned pattern generation is performed on the object placed on the moving object while accurately controlling the position of the moving object based on the position information measured by the position measuring device constituting the moving object driving system. By generating a pattern with the device, it is possible to form a pattern on the object with high accuracy.

 [0116] The present invention is not limited to the exposure apparatus, and other substrate processing apparatuses (for example, a laser repair apparatus, a substrate inspection apparatus, etc.), a sample positioning apparatus, a wire bonding apparatus, etc. in other precision machines The present invention can be widely applied to apparatuses equipped with a moving stage.

 [0117] In addition, as long as the national laws of the designated country (or selected selected country) designated in this international application permit, the above-mentioned various publications, international publication pamphlets, US patent application publication specifications and US patent specifications , The disclosure of which is incorporated herein by reference.

[0118] It should be noted that the semiconductor device has a function / performance design step of the device, a step of manufacturing a reticle based on this design step, a step of manufacturing a wafer from a silicon material, Projection optical system for pattern formed on reticle by exposure apparatus 100 A lithography step or device assembly step (dicing process) that exposes an object (wafer, etc.) with a PL image or a pattern generated by a pattern generator including, for example, an electronic mask (variable molding mask), and develops the exposed object. , Bonding process, and packaging process) and inspection steps. In this case, since the exposure apparatus of the above embodiment is used in a lithographic step, a highly integrated device can be manufactured with a high yield.

[0119] Further, the exposure apparatus (pattern forming apparatus) of the above-described embodiment has a predetermined mechanical accuracy, electrical accuracy, and optical accuracy for various subsystems including the constituent elements recited in the claims of the present application. Manufactured by assembling to keep To ensure these various accuracies, before and after the assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. Various subsystem forces The process of assembling the exposure equipment includes mechanical connections, electrical circuit wiring connections, and pneumatic circuit piping connections between the various subsystems. It goes without saying that there is an assembly process for each subsystem prior to the assembly process for the exposure power of these various subsystems. After the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies for the entire exposure apparatus. It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled.

 Industrial applicability

[0120] As described above, the position measuring apparatus and the position measuring method of the present invention are suitable for measuring the position of a moving body. In addition, the moving body driving system and the moving body driving method of the present invention are suitable for driving a moving body in a two-dimensional plane. The pattern forming apparatus and pattern forming method of the present invention are suitable for forming a pattern on an object. The device manufacturing method of the present invention is suitable for manufacturing a micro device (electronic device).

Claims

The scope of the claims  [1] A position measuring device that measures position information of a movable body movable within a predetermined plane, and is arranged on the movable body, and a direction parallel to the first axis in the plane is a periodic direction With the first grating;  A first irradiation system for irradiating the first grating with a light beam extending substantially elongated in a direction perpendicular to the first axis in the plane; and receiving light from the first grating; A first axis encoder head including a first light receiving element that outputs a signal including position information relating to a direction parallel to the first axis. [2] In the position measuring device according to claim 1,!  A second grating arranged on the moving body and having a periodic direction in a direction parallel to a second axis intersecting the first axis in the plane;  A second irradiation system for irradiating the second grating with a light beam extending substantially elongated in a direction perpendicular to the second axis in the plane; and receiving light from the second grating; and A second axis encoder head including: a second light receiving element that outputs a signal including position information related to a direction parallel to the second axis. [3] In the position measuring device according to claim 2,  The light beam applied to the second grating from the second irradiation system has a predetermined angle within a plane including a third axis orthogonal to the plane and an axis orthogonal to the second axis in the plane. A position measurement device that is light deflected in a range. [4] In the position measuring device according to any one of claims 1 to 3,  The light beam applied to the first grating from the first irradiation system has a predetermined angle within a plane including a third axis orthogonal to the plane and an axis orthogonal to the first axis in the plane. A position measurement device that is light deflected in a range. [5] In the position measuring device according to any one of claims 1 to 4,  A pair of at least one of the first grating and the second grating is disposed on the moving body with a predetermined interval therebetween, The first and second axis encoder heads corresponding to the at least one grating At least one of the position measuring devices is provided as a pair.  [6] In the position measuring device according to any one of claims 1 to 5,  A position measuring device further comprising an arithmetic device that calculates rotation information in the plane of the movable body based on outputs of a pair of encoder heads of the first and second axis encoder heads.  [7] A position measuring device for measuring position information of a movable body movable in a direction parallel to the first and second axes within a predetermined plane,  A first grating periodically arranged in a direction parallel to the first axis on the moving body;  A first encoder head that irradiates the first grating with a light beam that extends in the plane that intersects the first axis and extends in a direction that is at least as long as the first grating in a direction parallel to the second axis. And a position measuring device. [8] In the position measuring device according to claim 7,  The first encoder head includes a light receiving unit that detects light from the first grating at different positions according to movement of the moving body in a direction parallel to the second axis.  [9] In the position measuring device according to claim 7 or 8,  The first encoder head is a position measurement device that moves the light beam in a direction parallel to the second axis. [10] In the position measuring device according to any one of claims 7 to 9,  The position measurement apparatus, wherein the first grating is provided on one surface of the moving body substantially parallel to the plane, and the first encoder head is provided to face one surface of the moving body.  [11] In the position measuring device according to any one of claims 7 to 10,  A pair of the first gratings are provided on the moving body so as to be separated from each other in a direction parallel to the second axis, and the first encoder head is provided in a pair corresponding to the pair of first gratings. apparatus. [12] Claim 7 ~: The position measuring device according to claim 1, wherein L 1 is A second grating periodically disposed in a direction parallel to the second axis on the moving body;  A second encoder head that irradiates the second grating with a light beam that intersects with the second axis in the plane and extends with a length equal to or longer than the second grating in a direction parallel to the first axis. And a position measuring device. [13] The position measuring device according to claim 12,  The second encoder head includes a light receiving unit that detects light from the second grating at different positions in accordance with movement of the moving body in a direction parallel to the first axis.  [14] The position measuring device according to claim 12 or 13,  The second encoder head is a position measurement device that moves the light beam in a direction parallel to the first axis. [15] In the position measuring device according to any one of claims 12 to 14,  The position measurement device, wherein the second grating is provided on one surface of the moving body substantially parallel to the plane, and the second encoder head is provided to face one surface of the moving body.  [16] In the position measurement device according to any one of claims 12 to 15,  A pair of the second gratings are provided apart from each other in the direction parallel to the first axis on the movable body, and the second encoder head is provided in a pair corresponding to the pair of first gratings. apparatus. [17] The position measuring device according to any one of claims 1 to 16;  And a driving device that drives the moving body in the plane based on a measurement result of the position measuring device. 18. The moving body drive system according to claim 17, wherein an object is placed on the moving body;  A pattern generating apparatus that generates a pattern on the object. [19] a moving body that holds the object; The position measuring device according to any one of claims 1 to 16, which measures position information of the moving body; A pattern generation device for generating a pattern on the object,  The pattern formation apparatus which moves the said mobile body using the said position measuring device.  [20] The pattern forming apparatus according to claim 18 or 19,  The pattern generation apparatus generates the pattern by exposing the object with an energy beam. [21] using the pattern forming apparatus according to claim 18 or 19 to form a pattern on the object;  And a method of processing the object on which the pattern is formed.  [22] An exposure apparatus for exposing an object,  A moving body that holds the object;  An exposure apparatus comprising: the position measuring device according to any one of claims 1 to 16 that measures position information of the moving body. [23] A position measurement method for measuring position information of a movable body movable within a predetermined plane, the first being arranged on the movable body with a direction parallel to the first axis in the plane as a periodic direction. The grating is irradiated with a light beam extending substantially elongated in a direction orthogonal to the first axis in the plane, and receives light from the first grating, and is applied to the first axis of the moving body. A position measurement method including a step of measuring position information related to parallel directions. [24] The position measuring method according to claim 23,  A second grating disposed on the moving body with a direction parallel to the second axis intersecting the first axis in the plane as a periodic direction is substantially in a direction perpendicular to the second axis in the plane. A position measuring method further comprising: irradiating an elongated light beam, receiving light of the second grating force, and measuring position information relating to a direction parallel to the second axis of the moving body. [25] In the position measurement method according to claim 24, The light beam applied to the second grating is deflected in a predetermined angle range within a plane including a third axis orthogonal to the plane and an axis orthogonal to the second axis in the plane. A position measurement method that is light.  [26] In the position measuring method according to any one of claims 23 to 25,  The light beam applied to the first grating is light that is deflected within a predetermined angular range in a plane including a third axis orthogonal to the plane and an axis orthogonal to the first axis in the plane. A position measurement method. [27] In the position measuring method according to any one of claims 23 to 26,  A pair of at least one of the first grating and the second grating is disposed on the moving body with a predetermined interval therebetween,  The at least one grating arranged in the pair is irradiated with the light beam, respectively, the light of the at least one grating force arranged in the pair is received, and rotation information in the plane of the movable body is received. A position measuring method further including a step of calculating.  [28] A position measurement method for measuring position information of a movable body movable in a direction parallel to the first and second axes within a predetermined plane,  A light beam that intersects the first axis in the plane and extends with a length equal to or greater than that of the first grating in a direction parallel to the second axis is parallel to the first axis on the moving body. Irradiating the first grating periodically arranged in any direction, receiving the light from the first darling, and measuring the position information of the movable body in the direction parallel to the first axis A position measurement method including a process. [29] In the position measuring method according to claim 28,  A position measurement method for detecting light of the first grating force at a different position according to movement of the moving body in a direction parallel to the second axis. [30] The position measuring method according to claim 28 or 29,  A position measurement method for moving the light beam in a direction parallel to the second axis. [31] In the position measurement method according to any one of claims 28 to 30, The first grating is provided on one surface of the moving body substantially parallel to the plane, and the light beam is irradiated with a directional force facing the one surface of the moving body. [32] In the position measurement method according to any one of claims 28 to 31, a pair of the first gratings may be provided on the movable body so as to be separated from each other in a direction parallel to the second axis. A position measuring method of irradiating each of the first gratings with the light beam and receiving light from the pair of first gratings. [33] In the position measuring method according to any one of claims 28 to 32,  A light beam that intersects the second axis in the plane and extends with a length equal to or greater than that of the second grating in a direction parallel to the first axis is parallel to the second axis on the movable body. Irradiating the second grating periodically arranged in a certain direction, receiving the light from the second darling, and measuring position information of the movable body in a direction parallel to the second axis. A position measurement method further including a step. [34] The position measuring method according to claim 33,  A position measurement method for detecting light of the second grating force at a different position in accordance with movement of the moving body in a direction parallel to the first axis. [35] In the position measuring method according to claim 33 or 34,  A position measuring method for moving a light beam extending in a length equal to or longer than the second grating in a direction parallel to the first axis in a direction parallel to the first axis. [36] In the position measuring method according to any one of claims 33 to 35,  The position measurement method in which the second grating is provided on one surface of the moving body substantially parallel to the plane, and the second encoder head is irradiated from a direction facing the one surface of the moving body.  [37] In the position measuring method according to any one of claims 33 to 36,  A pair of the second gratings are provided on the movable body with respect to a direction parallel to the first axis, and each of the pair of second gratings is irradiated with the light beam, and the second grating A position measurement method that receives each light. [38] Measuring the position information of the moving body using the position measuring method according to any one of claims 23 to 37; And a step of driving the moving body in the plane based on the measured position information. [39] A step of driving a moving body on which an object is placed using the moving body driving method according to claim 38;  Generating a pattern on the object; and a pattern forming method. [40] A pattern forming method for forming a pattern on an object,  38. A pattern forming method including a step of measuring position information of a moving body that holds the object using the position measurement method according to any one of claims 23 to 37 when generating a pattern on the object. . [41] The pattern forming method according to claim 39 or 40,  The pattern generation method is performed by exposing the object with an energy beam.  [42] A step of forming a pattern on the object using the pattern forming method according to claim 41;  And a method of processing the object on which the pattern is formed.  [43] An exposure method for exposing an object,  An exposure method comprising a step of measuring position information of a moving body that holds the object using the position measurement method according to any one of claims 23 to 37.