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WO2007091031A3 - Capteur d'image - Google Patents

Capteur d'image Download PDF

Info

Publication number
WO2007091031A3
WO2007091031A3 PCT/GB2007/000386 GB2007000386W WO2007091031A3 WO 2007091031 A3 WO2007091031 A3 WO 2007091031A3 GB 2007000386 W GB2007000386 W GB 2007000386W WO 2007091031 A3 WO2007091031 A3 WO 2007091031A3
Authority
WO
WIPO (PCT)
Prior art keywords
photo
dendrimer
photodiode
photodiodes
sensitive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2007/000386
Other languages
English (en)
Other versions
WO2007091031A2 (fr
Inventor
Paul Leslie Burn
Stephen Collins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Publication of WO2007091031A2 publication Critical patent/WO2007091031A2/fr
Publication of WO2007091031A3 publication Critical patent/WO2007091031A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/791—Starburst compounds

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

La présente invention concerne un capteur d'image qui comprend une matrice de photodiodes, chaque photodiode comprenant un matériau photosensible comprenant un dendrimère afin de recevoir une lumière incidente. Les photodiodes peuvent être séparées ou peuvent être des régions d'une couche de matériau photosensible. Par rapport à chaque photodiode, une première électrode et une seconde électrode sont disposées sur des côtés opposés de la photodiode respective afin de recevoir un photocourant provenant de la photodiode. Une couche à circuit MOS est disposée sous les photodiodes de matériau photosensible. Le circuit MOS prévoit des circuits de détection connectés aux électrodes afin de détecter les photocourants. L'utilisation d'un dendrimère fournit aux capteurs les bénéfices de la disponibilité de propriétés désirées. Par la mise à disposition du dendrimère sur la couche à circuit MOS, l'étendue du pixel peut être accrue par rapport à un pixel MOS pour une résolution donnée.
PCT/GB2007/000386 2006-02-06 2007-02-05 Capteur d'image Ceased WO2007091031A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0602347.7A GB0602347D0 (en) 2006-02-06 2006-02-06 Image sensor
GB0602347.7 2006-02-06

Publications (2)

Publication Number Publication Date
WO2007091031A2 WO2007091031A2 (fr) 2007-08-16
WO2007091031A3 true WO2007091031A3 (fr) 2008-01-03

Family

ID=36101123

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/000386 Ceased WO2007091031A2 (fr) 2006-02-06 2007-02-05 Capteur d'image

Country Status (2)

Country Link
GB (1) GB0602347D0 (fr)
WO (1) WO2007091031A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026452A1 (fr) * 2010-08-25 2012-03-01 日産化学工業株式会社 Polymère contenant un cycle triazine et composition formant membrane le contenant
FR3106238B1 (fr) * 2020-01-13 2023-10-20 New Imaging Tech Détecteur d’image à collection électronique latérale

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021935A1 (fr) * 1997-10-23 1999-05-06 Isis Innovation Limited Dendrimeres et dispositifs emetteurs de lumiere
EP1398341A2 (fr) * 2002-09-13 2004-03-17 H.C. Starck GmbH Composés organiques avec structure de coeur-enveloppe
US20050205903A1 (en) * 2004-03-19 2005-09-22 Fuji Photo Film Co., Ltd. Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999021935A1 (fr) * 1997-10-23 1999-05-06 Isis Innovation Limited Dendrimeres et dispositifs emetteurs de lumiere
EP1398341A2 (fr) * 2002-09-13 2004-03-17 H.C. Starck GmbH Composés organiques avec structure de coeur-enveloppe
US20050205903A1 (en) * 2004-03-19 2005-09-22 Fuji Photo Film Co., Ltd. Photoelectric conversion film, photoelectric conversion element, imaging element, method of applying electric field thereto and electric field-applied element

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FOSSUM E R: "CMOS image sensors: electronic camera on a chip", ELECTRON DEVICES MEETING, 1995., INTERNATIONAL WASHINGTON, DC, USA 10-13 DEC. 1995, NEW YORK, NY, USA,IEEE, US, 10 December 1995 (1995-12-10), pages 17 - 25, XP010160971, ISBN: 0-7803-2700-4 *
NIERENGARTEN J-F ET AL: "Synthesis and electronic properties of donor-linked fullerenes - towards photochemical molecular devices", CARBON, ELSEVIER, OXFORD, GB, vol. 38, no. 11-12, 2000, pages 1587 - 1598, XP004215850, ISSN: 0008-6223 *

Also Published As

Publication number Publication date
WO2007091031A2 (fr) 2007-08-16
GB0602347D0 (en) 2006-03-15

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