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WO2007081807A3 - Semi-conducteur de puissance au nitrure iii comportant un élément de relaxation de champ - Google Patents

Semi-conducteur de puissance au nitrure iii comportant un élément de relaxation de champ Download PDF

Info

Publication number
WO2007081807A3
WO2007081807A3 PCT/US2007/000283 US2007000283W WO2007081807A3 WO 2007081807 A3 WO2007081807 A3 WO 2007081807A3 US 2007000283 W US2007000283 W US 2007000283W WO 2007081807 A3 WO2007081807 A3 WO 2007081807A3
Authority
WO
WIPO (PCT)
Prior art keywords
iii
power semiconductor
field relaxation
nitride power
relaxation feature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/000283
Other languages
English (en)
Other versions
WO2007081807A2 (fr
Inventor
Robert Beach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to JP2008549577A priority Critical patent/JP2009522812A/ja
Priority to DE112007000092.9T priority patent/DE112007000092B4/de
Publication of WO2007081807A2 publication Critical patent/WO2007081807A2/fr
Publication of WO2007081807A3 publication Critical patent/WO2007081807A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur de puissance au nitrure III, qui comporte un élément de relaxation de champ servant à relaxer les champs électriques autour de sa grille afin d'accroître la tensionde claquage.
PCT/US2007/000283 2006-01-09 2007-01-08 Semi-conducteur de puissance au nitrure iii comportant un élément de relaxation de champ Ceased WO2007081807A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008549577A JP2009522812A (ja) 2006-01-09 2007-01-08 電界緩和機能を有するｉｉｉ族窒化物電力半導体
DE112007000092.9T DE112007000092B4 (de) 2006-01-09 2007-01-08 Gruppe-III-Nitrid-Leistungshalbleiter mit einem Feld-Relaxations-Merkmal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75737006P 2006-01-09 2006-01-09
US60/757,370 2006-01-09

Publications (2)

Publication Number Publication Date
WO2007081807A2 WO2007081807A2 (fr) 2007-07-19
WO2007081807A3 true WO2007081807A3 (fr) 2008-01-24

Family

ID=38256927

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/000283 Ceased WO2007081807A2 (fr) 2006-01-09 2007-01-08 Semi-conducteur de puissance au nitrure iii comportant un élément de relaxation de champ

Country Status (3)

Country Link
JP (1) JP2009522812A (fr)
DE (1) DE112007000092B4 (fr)
WO (1) WO2007081807A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102365747B (zh) 2009-04-08 2014-07-30 宜普电源转换公司 补偿门极misfet及其制造方法
KR20120120829A (ko) * 2011-04-25 2012-11-02 삼성전기주식회사 질화물 반도체 소자 및 그 제조방법
JP5979836B2 (ja) * 2011-09-09 2016-08-31 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US8969881B2 (en) 2012-02-17 2015-03-03 International Rectifier Corporation Power transistor having segmented gate
KR101963218B1 (ko) * 2012-08-16 2019-03-28 엘지이노텍 주식회사 전력 반도체 소자
US9054027B2 (en) * 2013-05-03 2015-06-09 Texas Instruments Incorporated III-nitride device and method having a gate isolating structure
CN109103249A (zh) * 2018-04-04 2018-12-28 北京大学 一种优化平面布局和结构的大电流氮化镓高电子迁移率晶体管
JP6872055B2 (ja) * 2020-04-07 2021-05-19 ローム株式会社 半導体装置
CN115732544A (zh) * 2021-08-30 2023-03-03 华为技术有限公司 一种场效应管、其制备方法及电子电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US20030141512A1 (en) * 2002-01-31 2003-07-31 Georg Bruderl Semiconductor component and method for fabricating a semiconductor component
US20050048745A1 (en) * 2001-02-12 2005-03-03 Todd Michael A. Deposition over mixed substrates
US6870201B1 (en) * 1997-11-03 2005-03-22 Infineon Technologies Ag High voltage resistant edge structure for semiconductor components
US20050194612A1 (en) * 2004-01-23 2005-09-08 International Rectifier Corp. III-Nitride current control device and method of manufacture

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111985B2 (ja) * 1998-06-16 2000-11-27 日本電気株式会社 電界効果型トランジスタ
JP2001057426A (ja) * 1999-06-10 2001-02-27 Fuji Electric Co Ltd 高耐圧半導体装置およびその製造方法
JP4592938B2 (ja) * 1999-12-08 2010-12-08 パナソニック株式会社 半導体装置
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP2002100640A (ja) * 2000-09-22 2002-04-05 Fujitsu Ltd 電界効果型化合物半導体装置
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US6870201B1 (en) * 1997-11-03 2005-03-22 Infineon Technologies Ag High voltage resistant edge structure for semiconductor components
US20050048745A1 (en) * 2001-02-12 2005-03-03 Todd Michael A. Deposition over mixed substrates
US20030141512A1 (en) * 2002-01-31 2003-07-31 Georg Bruderl Semiconductor component and method for fabricating a semiconductor component
US20050194612A1 (en) * 2004-01-23 2005-09-08 International Rectifier Corp. III-Nitride current control device and method of manufacture

Also Published As

Publication number Publication date
JP2009522812A (ja) 2009-06-11
WO2007081807A2 (fr) 2007-07-19
DE112007000092B4 (de) 2014-07-24
DE112007000092T5 (de) 2008-10-16

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