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WO2007066141A1 - Method of inhibiting a deflagration in a vacuum pump - Google Patents

Method of inhibiting a deflagration in a vacuum pump Download PDF

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Publication number
WO2007066141A1
WO2007066141A1 PCT/GB2006/050366 GB2006050366W WO2007066141A1 WO 2007066141 A1 WO2007066141 A1 WO 2007066141A1 GB 2006050366 W GB2006050366 W GB 2006050366W WO 2007066141 A1 WO2007066141 A1 WO 2007066141A1
Authority
WO
WIPO (PCT)
Prior art keywords
reactant
vacuum pump
foreline
pump
process chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2006/050366
Other languages
French (fr)
Inventor
Michael Roger Czerniak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOC Group Ltd
Edwards Ltd
Original Assignee
BOC Group Ltd
Edwards Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Group Ltd, Edwards Ltd filed Critical BOC Group Ltd
Publication of WO2007066141A1 publication Critical patent/WO2007066141A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
    • B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
    • F04C29/0092—Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D19/00—Axial-flow pumps
    • F04D19/02—Multi-stage pumps
    • F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D29/00—Details, component parts, or accessories
    • F04D29/70—Suction grids; Strainers; Dust separation; Cleaning
    • F04D29/701—Suction grids; Strainers; Dust separation; Cleaning especially adapted for elastic fluid pumps

Definitions

  • This invention relates to a method of inhibiting a deflagration in a vacuum pump due to the accumulation within the pump of solid material that can cause a deflagration upon exposure to the atmosphere.
  • An epitaxial layer is a carefully grown, single crystal silicon film.
  • Epitaxial deposition utilizes a silicon source gas, typically silane or one of the chlorosilane compounds, such as trichlorosilane or dichlorosilane, in a hydrogen atmosphere at high temperature, typically around 800 - 1 100O, and under a vacuum condition.
  • Epitaxial deposition processes are often doped with small amounts of boron, phosphorus, arsenic, or carbon, as required, for the device being fabricated.
  • Hydrogen chloride may also be used to clean the chamber between deposition runs.
  • the residence time of the deposition gases in the processing chamber is relatively short, and only a small proportion of the gas supplied to the chamber is consumed during the deposition process.
  • a problem associated particularly with epitaxial deposition processes is that the by-products can adhere to, or be deposited on, the inner wall surface of the vacuum pump, the foreline extending between the processing chamber and the vacuum pump and into the pump exhaust pipework.
  • Such by-products tend to be compounds of silicon and chlorine, or compounds of silicon and hydrogen.
  • These by-products may include chlorosilane polymers of the form Si x Cl y H z . These polymers can be converted to self-ignitable or explosive materials, for example polysiloxanes, if exposed to moisture contained in the atmosphere.
  • the present invention provides a method of inhibiting a
  • the method comprising the step of supplying to the pump during operation thereof a reactant for chemically reacting with solid material that has accumulated within the pump during said operation and which can cause a deflagration upon exposure to the atmosphere.
  • the reactant is preferably one of a chlorocompound, that is, a compound that includes chlorine, such as hydrogen chloride or chlorine trifluoride, or a
  • fluorocompound that is a compound that includes fluorine.
  • HCI may react with a chlorosilane polymer to form silicon tetrachloride, which may be treated in an abatement device located downstream from the pump.
  • the reactant is preferably supplied to a foreline extending between an inlet of the vacuum pump and a process chamber that is evacuated using the vacuum pump. In addition to the removal of solid material from the vacuum pump, this can enable solid material to be removed from the part of the foreline located downstream from the location at which the reactant enters the foreline.
  • the reactant may be continuously or periodically supplied to the vacuum pump. In order to isolate the process chamber from the reactant, the reactant is preferably supplied into the foreline downstream from a valve for selectively isolating the vacuum pump from the process chamber.
  • the reactant may be supplied to an inlet of the vacuum pump. For example, if the vacuum pump is a multi-stage pump, the inlet may be located between stages of the pump. Alternatively, the reactant may be added directly into the pumping mechanism of the pump, together with, or in place of, a nitrogen purge gas.
  • Gases such as hydrogen chloride may be used to clean the process chamber, and so using such a cleaning gas as the reactant can enable the reactant to be conveniently supplied from the source of the cleaning gas, rather than from a separate source.
  • the present invention provides a vacuum pumping
  • An abatement device may be located downstream from the pump for abating a byproduct from the reaction between the solid material and the reactant.
  • the vacuum pumping arrangement includes a vacuum pump 12 and a foreline 14 for conveying exhaust gas from the process chamber 10 to the vacuum pump 12.
  • the vacuum pump 14 has an exhaust 16 connected to an inlet 18 of an abatement device 20, for example a combustion device.
  • the arrangement finds particular use with a process chamber 10 in which an epitaxial deposition process is performed.
  • process gases such as trichlorosilane or dichlorosilane, hydrogen and sources of dopants boron, phosphorus, arsenic, or carbon
  • the gas exhaust from the process chamber 10 can include polymeric material, typically compounds of silicon and chlorine, for example a chlorosilane polymer, in a gaseous form.
  • This material can adhere to, or be deposited on, the inner wall surface of the vacuum pump 12 and the foreline 14.
  • a problem associated with such materials is that they can be converted to self- ignitable or explosive materials, for example polysiloxanes, if exposed to moisture contained in the atmosphere during servicing of the vacuum pumping
  • the arrangement includes a source 26 of a reactant, for example, a chlorocompound such as HCI or CIF 3 , or a fluorocompound such as HF, and preferably of controlled humidity, for reacting with the accumulated material within the vacuum pump 12 and foreline 14 to form non-explosive material.
  • a reactant for example, a chlorocompound such as HCI or CIF 3 , or a fluorocompound such as HF, and preferably of controlled humidity, for reacting with the accumulated material within the vacuum pump 12 and foreline 14 to form non-explosive material.
  • This reactant may be the same as, or different from, a cleaning gas which is periodically supplied to the chamber 10 from a separate source 28 thereof for cleaning the chamber 10. If the reactant and the cleaning gas are the same, a single source may be provided for supplying this gas to the chamber 10 and/or the vacuum pump 12 as required.
  • the reactant is conveyed from the source 26 directly into the foreline 14 through a reactant inlet 28. The reactant can then flow through the portion of the foreline downstream from the inlet 28, and pass through the vacuum pump 12. Alternatively, the reactant may be conveyed directly into the vacuum pump 12, for example through one or more ports located in the body of the pump 12.
  • the reactant is supplied to the foreline 14 during operation of the vacuum pump 12, that is, when the accumulated material is at a sub-atmospheric pressure and therefore is less prone to reaction with any humidity contained within the gases flowing through the arrangement.
  • the reactant inlet 28 is located downstream from an isolation valve 30 located in the foreline 14 to enable the process chamber 10 to be isolated from the vacuum pump 12 when the reactant is supplied to the foreline 14. This can enable atmospheric pressure processes to be carried out within the process chamber 10 while the vacuum pump 12 remains operational and reactant is being supplied to the pump 12. Consequently, a controller 32 may synchronise the opening and closing of a valve 34 for regulating the supply of reactant to the inlet 28 with the operation of the isolation valve 30, so that the valve 34 is open only when the isolation valve 30 is closed.
  • the reactant may be continuously supplied to the pump 12, particularly when any migration of reactant from the foreline 14 into the process chamber 10 through an open isolation valve does not interfere with any process being conducted at a sub- atmospheric pressure within the process chamber 10.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method is described for inhibiting a deflagration within a vacuum pump. The method comprises the step of supplying to the pump during operation thereof a reactant for chemically reacting with solid material that has accumulated within the pump during said operation and which can cause a deflagration upon exposure to the atmosphere.

Description

METHOD OF INHIBITING A DEFLAGRATION IN A VACUUM PUMP
This invention relates to a method of inhibiting a deflagration in a vacuum pump due to the accumulation within the pump of solid material that can cause a deflagration upon exposure to the atmosphere.
Epitaxial deposition processes are increasingly used for high-speed
semiconductor devices, both for silicon and compound semiconductor
applications. An epitaxial layer is a carefully grown, single crystal silicon film. Epitaxial deposition utilizes a silicon source gas, typically silane or one of the chlorosilane compounds, such as trichlorosilane or dichlorosilane, in a hydrogen atmosphere at high temperature, typically around 800 - 1 100O, and under a vacuum condition. Epitaxial deposition processes are often doped with small amounts of boron, phosphorus, arsenic, or carbon, as required, for the device being fabricated. Hydrogen chloride may also be used to clean the chamber between deposition runs.
In such deposition processes, the residence time of the deposition gases in the processing chamber is relatively short, and only a small proportion of the gas supplied to the chamber is consumed during the deposition process.
Consequently, the majority of the deposition gases supplied to the chamber are exhausted from the chamber together with by-products from the deposition process. A problem associated particularly with epitaxial deposition processes is that the by-products can adhere to, or be deposited on, the inner wall surface of the vacuum pump, the foreline extending between the processing chamber and the vacuum pump and into the pump exhaust pipework. Such by-products tend to be compounds of silicon and chlorine, or compounds of silicon and hydrogen. These by-products may include chlorosilane polymers of the form SixClyHz. These polymers can be converted to self-ignitable or explosive materials, for example polysiloxanes, if exposed to moisture contained in the atmosphere. Consequently, if this material is allowed to accumulate within the vacuum pump, there is a risk that when the vacuum pump or foreline is raised to atmospheric pressure and exposed to air, for example when the foreline is dissembled during maintenance to remove the polymers deposited within the foreline and vacuum pump, or due to the accidental ingress of air into the vacuum pump due to a leakage in the foreline, an explosion may occur.
In a first aspect, the present invention provides a method of inhibiting a
deflagration within a vacuum pump, the method comprising the step of supplying to the pump during operation thereof a reactant for chemically reacting with solid material that has accumulated within the pump during said operation and which can cause a deflagration upon exposure to the atmosphere.
By supplying a controllable amount of a reactant to the vacuum pump for reacting with the solid material that has accumulated within the pump, this material can be converted into a material that does not cause a deflagration upon exposure to the atmosphere, thereby increasing the safety of any subsequent servicing or cleaning of the pump. The reactant is preferably one of a chlorocompound, that is, a compound that includes chlorine, such as hydrogen chloride or chlorine trifluoride, or a
fluorocompound, that is a compound that includes fluorine. For example, HCI may react with a chlorosilane polymer to form silicon tetrachloride, which may be treated in an abatement device located downstream from the pump.
The reactant is preferably supplied to a foreline extending between an inlet of the vacuum pump and a process chamber that is evacuated using the vacuum pump. In addition to the removal of solid material from the vacuum pump, this can enable solid material to be removed from the part of the foreline located downstream from the location at which the reactant enters the foreline. The reactant may be continuously or periodically supplied to the vacuum pump. In order to isolate the process chamber from the reactant, the reactant is preferably supplied into the foreline downstream from a valve for selectively isolating the vacuum pump from the process chamber. As opposed to supplying the reactant directly to the foreline, the reactant may be supplied to an inlet of the vacuum pump. For example, if the vacuum pump is a multi-stage pump, the inlet may be located between stages of the pump. Alternatively, the reactant may be added directly into the pumping mechanism of the pump, together with, or in place of, a nitrogen purge gas.
Gases such as hydrogen chloride may be used to clean the process chamber, and so using such a cleaning gas as the reactant can enable the reactant to be conveniently supplied from the source of the cleaning gas, rather than from a separate source.
In a second aspect, the present invention provides a vacuum pumping
arrangement for evacuating a process chamber, comprising a vacuum pump and means for supplying to the pump during operation thereof a reactant for chemically reacting with solid material that has accumulated within the pump during said operation and which can cause a deflagration upon exposure to the atmosphere. An abatement device may be located downstream from the pump for abating a byproduct from the reaction between the solid material and the reactant.
Features described above in relation to the first aspect of the invention are equally applicable to the second aspect, and vice versa.
Preferred features of the present invention will now be described with reference to the accompanying drawing, which illustrates schematically an embodiment of a vacuum pumping arrangement for evacuating a process chamber 10. The vacuum pumping arrangement includes a vacuum pump 12 and a foreline 14 for conveying exhaust gas from the process chamber 10 to the vacuum pump 12. The vacuum pump 14 has an exhaust 16 connected to an inlet 18 of an abatement device 20, for example a combustion device.
The arrangement finds particular use with a process chamber 10 in which an epitaxial deposition process is performed. In such a process, process gases such as trichlorosilane or dichlorosilane, hydrogen and sources of dopants boron, phosphorus, arsenic, or carbon, are conveyed to the chamber 10 from suitable sources 22, 24 thereof to form a layer of silicon on a substrate located within the chamber 10. Consequently, the gas exhaust from the process chamber 10 can include polymeric material, typically compounds of silicon and chlorine, for example a chlorosilane polymer, in a gaseous form. This material can adhere to, or be deposited on, the inner wall surface of the vacuum pump 12 and the foreline 14. A problem associated with such materials is that they can be converted to self- ignitable or explosive materials, for example polysiloxanes, if exposed to moisture contained in the atmosphere during servicing of the vacuum pumping
arrangement. Consequently, the arrangement includes a source 26 of a reactant, for example, a chlorocompound such as HCI or CIF3, or a fluorocompound such as HF, and preferably of controlled humidity, for reacting with the accumulated material within the vacuum pump 12 and foreline 14 to form non-explosive material.
This reactant may be the same as, or different from, a cleaning gas which is periodically supplied to the chamber 10 from a separate source 28 thereof for cleaning the chamber 10. If the reactant and the cleaning gas are the same, a single source may be provided for supplying this gas to the chamber 10 and/or the vacuum pump 12 as required. In the illustrated embodiment, the reactant is conveyed from the source 26 directly into the foreline 14 through a reactant inlet 28. The reactant can then flow through the portion of the foreline downstream from the inlet 28, and pass through the vacuum pump 12. Alternatively, the reactant may be conveyed directly into the vacuum pump 12, for example through one or more ports located in the body of the pump 12. The reactant is supplied to the foreline 14 during operation of the vacuum pump 12, that is, when the accumulated material is at a sub-atmospheric pressure and therefore is less prone to reaction with any humidity contained within the gases flowing through the arrangement. In view of this, the reactant inlet 28 is located downstream from an isolation valve 30 located in the foreline 14 to enable the process chamber 10 to be isolated from the vacuum pump 12 when the reactant is supplied to the foreline 14. This can enable atmospheric pressure processes to be carried out within the process chamber 10 while the vacuum pump 12 remains operational and reactant is being supplied to the pump 12. Consequently, a controller 32 may synchronise the opening and closing of a valve 34 for regulating the supply of reactant to the inlet 28 with the operation of the isolation valve 30, so that the valve 34 is open only when the isolation valve 30 is closed.
As an alternative to this periodic supply of reactant to the pump 12, the reactant may be continuously supplied to the pump 12, particularly when any migration of reactant from the foreline 14 into the process chamber 10 through an open isolation valve does not interfere with any process being conducted at a sub- atmospheric pressure within the process chamber 10.

Claims

1 . A method of inhibiting a deflagration within a vacuum pump, the method comprising the step of supplying to the pump during operation thereof a reactant for chemically reacting with solid material that has accumulated within the pump during said operation and which can cause a deflagration upon exposure to the atmosphere.
2. A method according to Claim 1 , wherein the reactant comprises one of a chlorocompound and a fluorocompound.
3. A method according to Claim 1 or Claim 2, wherein the reactant comprises one of hydrogen chloride and chlorine trifluoride.
4. A method according to any preceding claim, wherein the reactant is supplied to a foreline extending between an inlet of the vacuum pump and a process chamber.
5. A method according to Claim 4, wherein the reactant is supplied into the foreline downstream from a valve for selectively isolating the vacuum pump from the process chamber.
6. A method according to Claim 5, wherein the valve is closed during the supply of said reactant to the foreline.
7. A method according to any of Claims 4 to 6, wherein the reactant is also used to clean the process chamber.
8. A method according to any preceding claim, wherein the reactant is continuously supplied to the vacuum pump.
9. A method according to any of Claims 1 to 7, wherein the reactant is periodically supplied to the vacuum pump.
10. A method according to any preceding claim, wherein the solid
material comprises a polymeric material.
1 1 . A method according to Claim 10, wherein the explosive material comprises a compound of at least silicon and chlorine.
12. A method according to any preceding claim, wherein the humidity of the reactant is controlled.
13. A vacuum pumping arrangement for evacuating a process chamber, comprising a vacuum pump and means for supplying to the pump during operation thereof a reactant for chemically reacting with solid material that has accumulated within the pump during said operation and which can cause a deflagration upon exposure to the atmosphere.
14. An arrangement according to Claim 13, wherein the reactant
comprises one of a chlorocompound and a fluorocompound.
15. An arrangement according to Claim 13 or Claim 14, wherein the reactant comprises one of hydrogen chloride and chlorine trifluoride.
16. An arrangement according to any of Claims 13 to 15, comprising a foreline for conveying gas from the process chamber to an inlet of the vacuum pump, wherein the supply means is arranged to supply the reactant to the foreline.
17. An arrangement according to Claim 16, comprising a valve located within the foreline for selectively isolating the vacuum pump from the process chamber, and wherein the supply means is arranged to supply reactant is supplied into the foreline downstream from the valve.
18. An arrangement according to Claim 17, wherein the supply means is configured to supply reactant to the foreline when the valve is closed.
19. An arrangement according to any of Claims 13 to 18, wherein the supply means is arranged to continuously supply reactant to the vacuum pump.
20. An arrangement according to any of Claims 13 to 18, wherein the supply means is arranged to periodically supply reactant to the vacuum pump.
PCT/GB2006/050366 2005-12-09 2006-11-01 Method of inhibiting a deflagration in a vacuum pump Ceased WO2007066141A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0525136A GB0525136D0 (en) 2005-12-09 2005-12-09 Method of inhibiting a deflagration in a vacuum pump
GB0525136.8 2005-12-09

Publications (1)

Publication Number Publication Date
WO2007066141A1 true WO2007066141A1 (en) 2007-06-14

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WO (1) WO2007066141A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008022916A1 (en) * 2006-08-23 2008-02-28 Oerlikon Leybold Vacuum Gmbh Method for reacting self-igniting dusts in a vacuum pump device
EP2179776A1 (en) * 2008-10-21 2010-04-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Re-pressurisation of a VSA treating a gaseous mix containing a fuel
EP2231897A4 (en) * 2007-12-13 2012-12-05 Optogan Oy HVPE REACTOR ARRANGEMENT

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296944A1 (en) * 1987-06-19 1988-12-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of processing gaseous effluents coming from the production of electronic components and incinerator for carrying out this method
JPH06342785A (en) * 1993-06-01 1994-12-13 Fujitsu Ltd Exhauster of vapor growth device and cleaning method thereof
EP0985828A1 (en) * 1998-09-10 2000-03-15 Alcatel Method and device to prevent deposits in a turbomolecular pump having magnetic or gas bearings
US20020034880A1 (en) * 2000-09-21 2002-03-21 Kabushiki Kaisha Toshiba Semiconductor processing apparatus and method for manufacturing a semiconductor device
WO2004036047A1 (en) * 2002-10-14 2004-04-29 The Boc Group Plc Rotary piston vacuum pump with washing installation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296944A1 (en) * 1987-06-19 1988-12-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of processing gaseous effluents coming from the production of electronic components and incinerator for carrying out this method
JPH06342785A (en) * 1993-06-01 1994-12-13 Fujitsu Ltd Exhauster of vapor growth device and cleaning method thereof
EP0985828A1 (en) * 1998-09-10 2000-03-15 Alcatel Method and device to prevent deposits in a turbomolecular pump having magnetic or gas bearings
US20020034880A1 (en) * 2000-09-21 2002-03-21 Kabushiki Kaisha Toshiba Semiconductor processing apparatus and method for manufacturing a semiconductor device
WO2004036047A1 (en) * 2002-10-14 2004-04-29 The Boc Group Plc Rotary piston vacuum pump with washing installation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008022916A1 (en) * 2006-08-23 2008-02-28 Oerlikon Leybold Vacuum Gmbh Method for reacting self-igniting dusts in a vacuum pump device
US20100086883A1 (en) * 2006-08-23 2010-04-08 Oerlikon Leybold Vacuum Gmbh Method for reacting self-igniting dusts in a vacuum pump device
EP2231897A4 (en) * 2007-12-13 2012-12-05 Optogan Oy HVPE REACTOR ARRANGEMENT
EP2179776A1 (en) * 2008-10-21 2010-04-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Re-pressurisation of a VSA treating a gaseous mix containing a fuel

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