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WO2006135369A1 - Procedes d'elimination et/ou de cuisson de porogene favorises par un rayonnement ultraviolet pour la formation de materiaux poreux a faible dielectrique - Google Patents

Procedes d'elimination et/ou de cuisson de porogene favorises par un rayonnement ultraviolet pour la formation de materiaux poreux a faible dielectrique Download PDF

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Publication number
WO2006135369A1
WO2006135369A1 PCT/US2005/020862 US2005020862W WO2006135369A1 WO 2006135369 A1 WO2006135369 A1 WO 2006135369A1 US 2005020862 W US2005020862 W US 2005020862W WO 2006135369 A1 WO2006135369 A1 WO 2006135369A1
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Prior art keywords
dielectric material
ultraviolet radiation
porous
porogen
radiation pattern
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Carlo Waldfried
Qingyuan Han
Orlando Escorcia
Ivan Berry
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric

Definitions

  • the present disclosure generally relates to the manufacture of semiconductor devices, and more particularly, to ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectric materials employed in semiconductor devices.
  • Capacitive crosstalk is generally a function of both the distance between conductors and the dielectric constant (k) of the material (i.e., the insulator) placed in between the conductors.
  • porogen-based low k dielectrics One major issue with porogen-based low k dielectrics lies in the difficulty with removing the porogen without leaving residual porogen fragments and without adversely affecting the rest of the dielectric material or other components in the semiconductor device.
  • the vast majority of methods requires a thermal cure step at temperatures of 300 0 C or higher and for durations of 30 minutes or longer to crosslink the film, decompose and/or remove volatile porogen components, and reduce the dielectric constant of the film. These thermal processes may exceed the allowable thermal budgets for device manufacture.
  • the introduction of pores into the dielectric material in this manner can reduce the overall mechanical strength, cohesive strength and fracture toughness of the porous dielectric material.
  • the so-cured porous dielectric materials may have relatively poor moisture resistance and wet etching resistance, an area of concern where improvement is generally desired.
  • CMP chemical-mechanical polishing
  • wire bonding dicing
  • plasma etching wet processing
  • diffusion barrier layer deposition interconnect line deposition
  • plasma ashing chemical and thermal treatments
  • CMP chemical-mechanical polishing
  • penetration of reactant chemicals and solvents into the pores, contact with abrasives, and the like can degrade the dielectric film, increase the dielectric constant, and/or leave residues that can further deleteriously affect subsequent manufacturing steps.
  • a successful low-k candidate must display several critical material properties such as, for example, chemical resistance to oxidation and moisture absorption after plasma ashing, stripping and cleaning, and CMP processes; thermal stability (no weight loss or shrinkage following repeated isothermal soaks at, for example, 400°C); and the ability to adhere to substrates, including liners and barriers, in order to withstand the shearing and delamination forces exerted by the CMP process.
  • critical material properties such as, for example, chemical resistance to oxidation and moisture absorption after plasma ashing, stripping and cleaning, and CMP processes; thermal stability (no weight loss or shrinkage following repeated isothermal soaks at, for example, 400°C); and the ability to adhere to substrates, including liners and barriers, in order to withstand the shearing and delamination forces exerted by the CMP process.
  • a process for forming an electrical interconnect structure comprises depositing a non-porous dielectric material onto a substrate, wherein the non-porous dielectric material comprises a matrix and a porogen material; patterning the non-porous dielectric material and forming a metal interconnect structure; and exposing the non-porous low k dielectric material to an ultraviolet radiation pattern for a period of time effective to remove a portion of the porogen material, wherein the removed portion forms pores within the matrix and forms a porous dielectric material, wherein the ultraviolet radiation pattern comprises broadband wavelengths less than 240 nanometers.
  • a process for forming a porous low k dielectric material consists essentially of exposing a non-porous dielectric layer comprising a porogen material and a matrix to ultraviolet radiation having a broadband radiation pattern comprising wavelengths less than 240 nanometers for a period of time and at an intensity effective to volatilize the porogen material from the matrix; and flowing a gas about the non-porous dielectric layer to remove the volatilized porogen material and form the porous low k dielectric material.
  • the process for forming an electrical interconnect structure comprises depositing a non-porous dielectric material comprising a matrix and a porogen material onto a substrate; exposing the non-porous dielectric firm to a first ultraviolet radiation pattern, wherein the first ultraviolet radiation pattern is effective to increase the crosslinking density of the non-porous dielectric firm, and wherein a concentration of the porogen material remains substantially the same before and after exposure to the first ultraviolet radiation pattern; patterning the non-porous dielectric material and forming a metal interconnect structure in the patterned non-porous dielectric material; and exposing the non-porous dielectric material to a second ultraviolet radiation pattern in an amount to effectively remove porogen material from the matrix and form a porous low k dielectric material.
  • Figure 1 graphically illustrates a broadband spectral output of a Type I electrodeless microwave driven bulb
  • Figure 2 graphically illustrate the broadband spectral output of a Type II electrodeless microwave driven bulb
  • Figure 3 graphically illustrates an FTIR spectra of a CVD deposited SICOH low k dielectric film containing a porogen material before and after exposure to different ultraviolet radiation patterns
  • Figure 4 graphically illustrates an FTIR spectra of a CVD deposited SICOH low k dielectric film containing a porogen material before and after exposure to ultraviolet radiation effective to increase crosslinking density in the low k dielectric film.
  • the present disclosure is generally directed to a process for forming an electrical interconnect structure using a porogen based low k dielectric film to produce a porous low k dielectric layer therein.
  • the process includes an ultraviolet (UV) curing process for removing porogen materials from the low k dielectric film to form porous low k dielectric films.
  • UV curing process for forming the porous low k dielectric film as will be described in greater detail below occurs after deposition of the layers employed in the interconnect structure and provides a means for integrating porous low k dielectric materials within the integrated circuit manufacturing process.
  • porous low k dielectric materials generally refers to those materials comprising a matrix and a removable porogen, wherein the porous dielectric material after removal of the porogen by the UV process, has a dielectric constant (k) less than 3.0.
  • the process for forming electrical interconnect structures generally comprises depositing or coating a layer of the low k dielectric material containing the porogen onto a substrate.
  • the layer is exposed to a first ultraviolet radiation pattern for a time and intensity effective to primarily increase the crosslinking density without removing any substantial amount of porogen material.
  • the amount of porogen material that is removed is an amount such that the pore fill ratio remains substantially unaffected, e.g. within +/- 20% of the pore fill ratio before processing.
  • the layer is then patterned using conventional lithographic techniques including a hard mask, if desired, in the process flow.
  • the patterned low k dielectric material is then coated with a barrier/copper seed layer generally employed for subsequent deposition of a copper interconnect structure in the vias/trenches provided by the patterned low k dielectric layer.
  • the substrate is then typically subjected to a chemical mechanical polish process for planarizing the patterened copper surface.
  • the chemical mechanical polishing process to effect planarization does not deleteriously affect integration. For example, etching selectivity is maintained since minimal pores are present at this step in the process of forming the interconnect structure.
  • the harsh chemical steps that follow CMP will not degrade the dielectric material or increase the dielectric constant since reactive gases and/or solvents cannot penetrate into the non-porous dielectric film.
  • the device is then exposed to a second ultraviolet radiation pattern, which is at intensity and time effective to remove substantially all of the removable porogen material from the low k dielectric layer, thereby creating a porous low k dielectric layer.
  • a second ultraviolet radiation pattern which is at intensity and time effective to remove substantially all of the removable porogen material from the low k dielectric layer, thereby creating a porous low k dielectric layer.
  • the resulting dielectric constant for the porous low k material advantageously decreases as a result of exposing the low k dielectric material to the second ultraviolet radiation pattern.
  • the exposure to the first and second ultraviolet radiation patterns as described herein is effective for crosslinking the low k dielectric film prior to patterning of the low k dielectric layer and copper metallization (first UV radiation exposure) and for efficiently removing the removable porogen material without degrading the porous low k dielectric structure after formation of the metal interconnect structure (second UV radiation exposure).
  • first UV radiation exposure first UV radiation exposure
  • second UV radiation exposure second UV radiation exposure
  • a UV curing process comprises exposing the low k dielectric film to a broadband ultraviolet radiation pattern of 170 to 240 nanometers (nm) to effectively remove porogen material from the low k dielectric material. It has unexpectedly been found that this particular wavelength region is more effective than ultraviolet radiation at wavelengths greater than 240 nm.
  • the term broadband refers to a wavelength having a FWHM greater than about 10 nanometers.
  • the UV curing process can be practiced before or after dielectric patterning as may be desired from some applications and dielectric materials.
  • an exemplary process for forming the electrical interconnect structure may comprise depositing the low k dielectric film, forming a pattern in the low k dielectric film, forming the metal interconnects, and exposing the substrate to a broadband ultraviolet radiation pattern having wavelengths of 180 run to 240nm. In this manner, the low k dielectric film is made porous after the' formation of the metal interconnect structure.
  • porogen removal and crosslinking may be performed simultaneously.
  • the UV radiation pattern is selected to provide both porogen removal and increase the crosslinking density of the low k dielectric material.
  • the UV exposure suitable for porogen removal and crosslinking occurs after formation of the interconnect structure in the manner previously described
  • the term "porous low k dielectric” generally refers to materials deposited or coated comprising an ultraviolet radiation removable porogen material and a matrix or a matrix precursor.
  • the methods for deposition and/or coating are well known in the art and are not intended to be limited.
  • Some examples of processes that may be used to form the initial low k dielectric film include chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), high density PECVD, photon assisted CVD, plasma-photon assisted CVD, cryogenic CVD, chemical assisted vapor deposition, hot-filament CVD, CVD of a liquid polymer precursor, deposition from supercritical fluids, or transport polymerization ("TP").
  • Other processes that can be used to form the film include spin coating, dip coating, Langmuir-blodgett self-assembly, or misting deposition methods.
  • porogen material generally refers to those sacrificial organic based materials known in the art that generate or form pores within the low k dielectric film after removal thereof.
  • the porogen materials form domains (or discrete regions) in the matrix or matrix precursor, which upon removal from the matrix or matrix precursor form pores, i.e., voids.
  • the domains should be no larger than the final desired pore size.
  • suitable porogen materials include materials that degrade upon exposure to ultraviolet radiation to form volatile fragments or radicals, which can be removed from the matrix material or matrix precursor material under a flow of inert gas and/or exposure to heat, for example. In this manner, upon exposure to the ultraviolet radiation, pores are formed within the matrix.
  • porogen materials that are generally characterized in the art as thermally labile, thermally removable, and the like, are generally suitable for removal upon exposure to the ultraviolet radiation processes described herein. Materials of this kind are generally described in U.S. Patent No. 6,653,358, entitled, "A Composition Containing a Cross-linkable Matrix Precursor and a Porogen and a Porous Matrix Prepared Therefrom", the contents of which are incorporated herein in their entirety by reference.
  • Exemplary porogen materials susceptible to removal upon exposure to the ultraviolet radiation processes described herein generally include, but are not limited to, hydrocarbon materials, labile organic groups, solvents, decomposable polymers, surfactants, dendrimers, hyper-branched polymers, polyoxyalkylene compounds, or combinations thereof.
  • the porogen material may be a block copolymer (e.g., a di-block polymer). Such materials may be capable of self-assembling if the blocks are immiscible to give separated domains in the nanometer size range.
  • a block copolymer can be added to the cross-linkable matrix precursor with or without solvent to obtain a formulation suitable for processing.
  • the block copolymer can self- assemble during processing (e.g., after spin coating, but before the matrix is formed).
  • One or more of the blocks may be reactive with the matrix or the blocks may be non- reactive.
  • One or more of the blocks may be compatible with the matrix, or its precursor, but preferably at least one block is incompatible with the matrix.
  • Useful polymer blocks can include an oligomer of the matrix precursor, polyvinyl aromatics, such as polystyrenes, polyvinylpyridines, hydrogenated polyvinyl aromatics, polyacrylonitriles, polyalkylene oxides, such as polyethylene oxides and polypropylene oxides, polyethylenes, polylactic acids, polysiloxanes, polycaprolactones, polycaprolactams, polyurethanes, polymethacrylates, such as polymethylmethacrylate or polymethacrylic acid, polyacrylates, such as polymethylacrylate and polyacrylic acid, polydienes such as polybutadienes and polyisoprenes, polyvinyl chlorides, polyacetals, and amine-capped alkylene oxides.
  • polyvinyl aromatics such as polystyrenes, polyvinylpyridines, hydrogenated polyvinyl aromatics, polyacrylonitriles, polyalkylene oxides, such as polyethylene oxides and polypropylene oxides, poly
  • a diblock polymer based on polystyrene and polymethylmethacrylate can be added to a solution of CYCLOTENE® resin in a suitable solvent such as mesitylene at a weight : weight ratio of resin to diblock polymer of preferably not less than about 1:1, and more preferably not less than 2:1, and most preferably not less than 3:1.
  • the overall solids content is application dependent, but is generally not less than about 1 weight percent, more generally not less than about 5 weight percent, and most generally not less than about 10 weight percent, and generally not greater than about 70, more generally not greater than about 50, and most generally not greater than 30 weight percent.
  • the solution can then be spin-coated onto a suitable substrate leaving a thin film containing a dispersed phase of diblock copolymer in a continuous phase of DVS-bisBCB.
  • the film can then be radiation cured leaving a crosslinked polymer system containing a dispersed phase of poly(styrene-b-methylmethacrylate) in a continuous phase of cross-linked DVS-bisBCB.
  • the film can be cured by exposure to a first UV radiation pattern that effectively crosslinks the film.
  • the diblock copolymer can then be decomposed or removed by exposure to ultraviolet radiation to leave a porous cross- linked DVS-bisBCB polymer.
  • a diblock polymer based on polystyrene and polybutadiene can be added to a b-staged solution of a dicyclopentadienone (e.g., 3,3'- (oxydi-l,4-phenylene)bis(2, 4,5-triphenycyclpentadienone)) and a trisacetylene (e.g., 1,3,5- tris(phenylethynyl)benzene).
  • a dicyclopentadienone e.g., 3,3'- (oxydi-l,4-phenylene)bis(2, 4,5-triphenycyclpentadienone)
  • a trisacetylene e.g., 1,3,5- tris(phenylethynyl)benzene
  • thermoplastic homopolymers and random (as opposed to block) copolymers may also be utilized as suitable porogen materials.
  • "homopolymer” means compounds comprising repeating units from a single monomer.
  • Suitable thermoplastic materials include polystyrenes, polyacrylates, polymethacrylates, polybutadienes, polyisoprenes, polyphenylene oxides, polypropylene oxides, polyethylene oxides, poly(dimethylsiloxanes), polytetrahydrofurans, polyethylenes, polycyclohexylethylenes, polyethyloxazolines, polyvinylpyridines, polycaprolactones, polylactic acids, copolymers of these materials and mixtures of these materials.
  • the thermoplastic materials may be linear, branched, hyperbranched, dendritic, or star like in nature.
  • Polystyrene can be suitable with thermosettable mixtures or b-staged products of a polycyclopentadienone and a polyacetylene.
  • the polystyrene polymer can be made to actinically (ultraviolet radiation) decompose into primarily the monomer, which can then diffuse out of the matrix.
  • Any known polystyrene may be useful as the porogen.
  • anionic polymerized polystyrene, syndiotactic polystyrene, unsubstituted and substituted polystyrenes may all be used as the porogen.
  • anionically polymerized polystyrene with a number average molecular weight of 8,500 can be blended with a polyarylene b-staged reaction product of a polycyclopentadienone and a polyacetylene.
  • This solution can then be spin-coated onto a suitable substrate to create a thin film containing the dispersed phase of polystyrene in the polyarylene matrix precursor.
  • the coated wafer can first be cured (i.e., forms a crosslinked matrix containing the porogen material) thermally, e.g., on a hot plate, or by exposure to ultraviolet radiation and at a temperature less than 425 0 C, for example.
  • the polystyrene porogen can then be removed by exposure to a suitable ultraviolet radiation pattern to form a porous polyarylene matrix. Removing the porogen material can occur before or after dielectric patterning depending on the desired application.
  • the porogen material may also be designed to react with the cross- linkable matrix precursor during or subsequent to b-staging to form blocks or pendant substitution of the polymer chain.
  • thermoplastic polymers containing, for example, reactive groups such as vinyl, acrylate, methacrylate, allyl, vinyl ether, maleimido, styryl, acetylene, nitrile, furan, cyclopentadienone, perfluoroethylene, BCB, pyrone, propiolate, or ortho-diacetylene groups can form chemical bonds with the cross-linkable matrix precursor, and then the thermoplastic can be removed to leave pores.
  • the thermoplastic polymer can be homopolymers or copolymers of polystyrenes, polyacryclates, polymethacrylates, polybutadienes, polyisoprenes, polyphenylene oxides, polypropylene oxides, polyethylene oxides, poly(dimethylsiloxanes), polytetrahydrofurans, polyethylenes, polycyclohexylethylenes, polyethyloxazolines, polycaprolactones, polylactic acids, and polyvinylpyridines or mixtures thereof.
  • a single reactive group or multiple reactive groups may be present on the thermoplastic. The number and type of reactive group will determine whether the thermoplastic porogen is incorporated into the matrix as a pendant material or as a block.
  • the thermoplastic materials may be linear, branched, hyperbranched, dendritic, or star-like in nature.
  • a low molecular weight ( ⁇ 10,000 Mn) polypropylene glycol oligomer can be end-capped with cinnamate groups, then added at about 10 to about 30 weight percent to a neat DVS-bisBCB monomer.
  • This mixture can then be b-staged by heating, then diluted with a suitable solvent such as mesitylene and spin- coated onto a suitable substrate to create a thin film containing a dispersed phase of polypropylene glycol oligomers chemically bonded to the b-staged DVS-bisBCB.
  • the dispersed polypropylene glycol oligomers can then be decomposed by exposure to a suitable ultraviolet radiation pattern and process to leave a porous cross-linked DVS-bisBCB polymer.
  • the desired molecular weight of polymeric porogen will vary with a variety of factors, such as their compatibility with the matrix precursor and cured matrix, the desired pore size, an the like. Generally, however, the number average molecular weight of the porogen is greater than about 2,000 and less than about 100,000.
  • the porogen polymer also preferably has a narrow molecular weight distribution.
  • the porogen may also be a material that has an average diameter of about 0.5 to about 50 nanometers (run).
  • examples of such materials include dendrimers (polyamidoamine (PAMAM), dendrimers are available through Dendritech, Inc.; polypropylenimine polyamine (DAB-Am) dendrimers available from DSM Corporation; Frechet type polyethereal dendrimers; Percec type liquid crystal monodendrons, dendronized polymers and their self-assembled macromolecules, hyperbranched polymer systems such as Boltron H series dendritic polyesters (commercially available from Perstorp AB) and latex particles, especially cross-linked polystyrene containing latexes.
  • PAMAM polyamidoamine
  • DAB-Am polypropylenimine polyamine
  • a generation 2 PAMAM (polyamidoamine) dendrimer from Dendritech, Inc. can be functionalized with vinyl benzyl chloride to convert amine groups on the surface of the dendrimer to vinyl benzyl groups.
  • This functionalized dendrimer can then be added to a solution of b-staged DVS-bisBCB in mesitylene, and the mixture can then be spin-coated on a suitable substrate to obtain a dispersed phase of PAMAM dendrimer in DVS-bisBCB oligomers.
  • the film can be thermally cured to obtain a cross-linked polymer system (i.e., matrix) containing a dispersed phase of PAMAM dendrimer chemically bonded to a continuous phase of cross-linked DVS-bisBCB.
  • the dendrimer can then be decomposed by exposure to ultraviolet radiation to obtain the porous cross-linked DVS-bisBCB polymer.
  • a generation 4 Boltron dendritic polymer (H40) from Perstorp AB can be modified at its periphery with benzoyl chloride to convert hydroxy groups on the surface of the dendrimer to phenyl ester groups.
  • This functionalized dendrimer can then be added to a precursor solution of partially polymerized (i.e., b-staged) reaction product of a polycyclopentadiene compound and a polyacetylene compound in a solvent mixture of gamma- butyrolactone and cyclohexanone.
  • the mixture can then be spin-coated on a silicon wafer to obtain a dispersed phase of Boltron H40 benzoate dendritic polymers in precursor oligomers.
  • the film can be thermally cured to obtain a cross-linked polymer system containing a dispersed phase of dendrimer chemically bonded to a continuous phase of cross-linked polyarylene.
  • the dendrimer can then be decomposed by exposure to the ultraviolet radiation process to obtain the porous cross-linked polyarylene.
  • the porogen may also be a solvent.
  • a b- staged prepolymer or partially cross-linked polymer can first be swollen in the presence of a suitable solvent or a gas. The swollen material can then be further cross-linked to increase structural integrity, whereupon the solvent or gas is then removed by ultraviolet radiation.
  • Suitable solvents include, but are not intended to be limited to, mesitylene, pyridine, triethylamine, N- methylpyrrolidinone (NMP), methyl benzoate, ethyl benzoate, butyl benzoate, cyclopentanone, cyclohexanone, cycloheptanone, cyclooctanone, cyclohexylpyrrolidinone, and ethers or hydroxy ethers such as dibenzylethers, diglyme, triglyme, diethylene glycol ethyl ether, diethylene glycol methyl ether, dipropylene glycol methyl ether, dipropylene glycol dimethyl ether, propylene glycol phenyl ether, propylene glycol methyl ether, tripropylene glycol methyl ether, toluene, xylene, benzene, dipropylene glycol monomethyl ether acetate, dichlorobenzene, prop
  • the concentration of pores in the porous matrix is sufficiently high to lower the dielectric constant but sufficiently low to allow the matrix to withstand the process steps required in the manufacture of the desired microelectronic device (for example, an integrated circuit, a multichip module, or a flat panel display device).
  • the density of pores is sufficient to lower the dielectric constant to less than 3.0, more preferably to less than 2.5 and even more preferably, less than 2.0.
  • the concentration of the pores is at least 5 volume percent, more preferably at least 10 volume percent and most preferably at least 20 volume percent, and preferably not more than 70 volume percent, more preferably not more than 60 volume percent based on the total volume of the porous matrix.
  • the average diameter of the pores is preferably less than about 4 nm; and more preferably, less than 1 nm.
  • Suitable matrices and matrix precursors generally include, but are not intended to be limited to a silicon-containing polymer, or a precursor to such a polymer, e.g., methyl silsesquioxane, and hydrogen silsesquioxane; adamantine based thermosetting compositions; cross-linked polyphenylene; polyaryl ether; polystyrene; crosslinked polyarylene; polymethylmethacrylate; aromatic polycarbonate; aromatic polyimide; and the like.
  • Suitable silicon containing compounds generally include silicon, carbon, oxygen and hydrogen atoms, also commonly referred to as SiCOH dielectrics.
  • Exemplary silicon containing compounds include silsesquioxanes, alkoxy silanes, preferably partially condensed alkoxysilanes (e.g., partially condensed by controlled hydrolysis of tetraethoxysilane having an Mn of about 500 to 20,000), organically modified silicates having the composition RSiO 3 and R 2 SiO 2 wherein R is an organic substituent, and orthosilicates, preferably partially condensed orthosilicates having the composition Si(OR) 4 .
  • silsesquioxanes are polymeric silicate materials of the type (RSiO 1.5)n, wherein R is an organic substituent. Combinations of two or more different silicon containing compounds may also be used.
  • Suitable silicon containing compounds are known to those skilled in the art, and/or are described in the pertinent texts, patents, and literature. See, for example, U.S. Pat. Nos. 5,384,376 to Tunney et al., 6,107,357 to Hawker et al., and 6,143,643 to Carter et al., and Chem. Rev. 95:1409-1430 (1995).
  • the silicon containing compounds are silsesquioxanes.
  • Suitable silsesquioxanes include, but are not limited to, hydrogen silsesquioxanes, alkyl (preferably lower alkyl, e.g., methyl) silsesquioxanes, aryl (e.g., phenyl) or alkyl/aryl silsesquioxanes, and copolymers of silsesquioxanes (e.g., copolymers of polyimides and silsesquioxanes).
  • the cyclic siloxane or other silicon based dielectric precursor may be delivered to the vicinity of a semiconductor wafer where a silicon containing porogen is also delivered. As described above, this may be accomplished through conventional CVD or other deposition methods. In this manner, the silicon based dielectric precursor and the silicon containing porogen combine to form the porogen material noted above.
  • the organic silicon containing porogens of the porogen material may include a thermally cleavable organic " group.
  • the porogen material is activated by exposure to ultraviolet radiation to release a cleavable organic group.
  • Such silicon containing porogens may include carboxylates with alkyl, fluoroalkyl, perfluoroalkyl, cycloalkyl, aryl, fluoroaryl, vinyl, allyl, or other side chains.
  • silicon-containing porogens may include an ultraviolet radiation cleavable side chain that is a tertiary alkyl group, such as a t-butyl or amyl group.
  • the particular silicon containing porogen employed is a matter of design choice depending on factors such as compatibility with the silicon based dielectric precursor, the size and amount of pores to be formed, and the desired parameters to be employed in activating the porogenesis.
  • the silicon based dielectric precursor may include tetramethylcyclotetrasiloxane, hexamethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, for example.
  • One class of matrix precursors include thermosettable benzocyclobutenes (BCBs) or b-staged products thereof.
  • BCBs thermosettable benzocyclobutenes
  • DVS-bisBCB l,3-bis(2- bicyclo[4.2.0]octa-l,3,5-trien-3-ylethynyl)-l, 1,3,3- tetramethyldisiloxane
  • DVS-bisBCB l,3-bis(2- bicyclo[4.2.0]octa-l,3,5-trien-3-ylethynyl)-l, 1,3,3- tetramethyldisiloxane
  • CYCLOTENE® resin from The Dow Chemical Company
  • polyarylenes include polyarylenes.
  • Polyarylene as used herein, includes compounds that have backbones made from repeating arylene units and compounds that have arylene units together with other linking units in the backbone, e.g. oxygen in a polyarylene ether.
  • Examples of commercially available polyarylene compositions include SiLK® Semiconductor Dielectric (from The Dow Chemical Company), Flare® dielectric (from Allied Signal, Inc.), and Velox® (poly(arylene ether)) (from AirProducts/Shuraum).
  • One class of polyarylene matrix precursors are thermosettable mixtures or b- staged products of a polycyclopentadienone and a polyacetylene.
  • thermosetting compositions or cross- linkable polyarylenes examples include monomers such as aromatic compounds substituted with ethynylic groups ortho to one another on the aromatic ring; cyclopentadienone functional compounds combined with aromatic acetylene compounds; and polyarylene ethers. More preferably, the thermosetting compositions comprise the partially polymerized reaction products (i.e., b-staged oligomers) of the monomers mentioned above.
  • the precursors when the matrix precursor comprises a thermosettable mixture or b- staged product of a polycyclopentadienone and a polyacetylene, the precursors preferably are characterized so that branching occurs relatively early during the curing process. Formation of a branched matrix early on in the cure process minimizes the modulus drop of the matrix, and helps minimize possible pore collapse during the cure process.
  • One approach for achieving this is to use a ratio of cyclopentadienone functionality to acetylene functionality in the precursor composition of greater than about 3:4, and preferably less than about 2:1, more preferably about 1:1.
  • a matrix precursor comprised of 3 parts 3,3'-(oxydi-l,4-phenylene)bis(2,4,5- triphenycyclpentadienone) and 2 parts l,3,5-tris(phenylethynyl)benzene (molar ratios) is an example of such a system.
  • additional reagents capable of cross- linking the thermosettable mixture or b-staged product of a polycyclopentadienone and a polyacetylene can be added to minimize the modulus drop of the matrix during the cure process.
  • Suitable reagents include bisorthodiacetylenes; monoorthodiacetylenes; bistriazenes; tetrazines, such as 1,3-diphenyltetrazine; bisazides, such as bissulfonylazides; and peroxides, including diperoxides.
  • a third example of a matrix precursor suitable for the preparation of the porous matrix is a thermosettable perfluoroethylene monomer (having a functionality of 3 or more) or a b- staged product thereof, e.g., l,l,l-tris(4- trifluorovinyloxyphenyl)ethane.
  • the thermosettable perfluoroethylene monomer may also be conveniently copolymerized with a perfluoroethylene monomer having a functionality of two.
  • Another suitable polyarylene matrix precursor is a thermosettable bis-o- diacetylene or b-staged product thereof.
  • the low k dielectric material containing the porogen material is deposited onto a suitable substrate and exposed to the ultraviolet radiation process, e.g., before or after metal interconnect formation as previously described.
  • suitable substrates include, but are not intended to be limited to, silicon, silicon-on-insulator, silicon germanium, silicon dioxide, glass, silicon nitride, ceramics, aluminum, copper, gallium arsenide, plastics, such as polycarbonate, circuit boards, such as FR-4 and polyimide, hybrid circuit substrates, such as aluminum nitride-alumina, and the like.
  • Such substrates may further include thin films deposited thereon, such films including, but not intended to be limited to, metal nitrides, metal carbides, metal suicides, metal oxides, and mixtures thereof.
  • thin films deposited thereon such films including, but not intended to be limited to, metal nitrides, metal carbides, metal suicides, metal oxides, and mixtures thereof.
  • an underlying layer of insulated, planarized circuit lines can also function as a substrate.
  • the choice of substrates and devices is limited only by the need for thermal and chemical stability of the substrate at the temperature and pressure.
  • the low k dielectric material containing the porogen material can be processed in a UV irradiator tool or the like in which the atmosphere is preferably first purged with nitrogen, helium, or argon to allow the UV radiation to enter the process chamber, if applicable, with minimal spectral absorption and to generate an inert environment around the low-k dielectric structure to prevent oxidization.
  • the dielectric material can be positioned within the process chamber, which is purged separately and process gases, such as N 2 , H 2 , Ar, He, Ne, H 2 O vapor, CO 2 , O 2 , C x Hy, C x Fy, C x H z F y , and mixtures thereof, wherein x is an integer between 1 and 6, y is an integer between 4 and 14, and z is an integer between 1 and 3, may be utilized for different applications.
  • process gases such as N 2 , H 2 , Ar, He, Ne, H 2 O vapor, CO 2 , O 2 , C x Hy, C x Fy, C x H z F y , and mixtures thereof, wherein x is an integer between 1 and 6, y is an integer between 4 and 14, and z is an integer between 1 and 3, may be utilized for different applications.
  • UV curing and/or porogen removal can occur at vacuum conditions, or at conditions without the presence of oxygen, or with oxidizing gases.
  • the UV light source
  • UV generating bulbs with different spectral distributions may be selected depending on the application such as, for example, microwave electrodeless bulbs identified as Type I, or Type II and available from Axcelis Technologies (Beverly, MA). Spectra obtained from the Type I and Type II bulbs and suitable for use in the UV cure process are shown in Figures 1 and 2, respectively.
  • the temperature of the substrate may be controlled ranging from room temperature to about 450°C, optionally by an infrared light source, an optical light source, a hot surface, or the light source itself.
  • the process pressure can be less than, greater than, or equal to atmospheric pressure.
  • the UV treated dielectric material, whether for curing or porogen removal is UV treated for no more than or about 600 seconds and, more particularly, between about 60 and about 300 seconds.
  • UV treating can be performed at a temperature between about room temperature and about 450°C; at a process pressure that is less than, greater than, or about equal to atmospheric pressure; at a UV power between about 0.1 and about 2,000 mW/cm 2 ; and a UV wavelength spectrum between about 150 and about 400nm.
  • the UV cured dielectric material can be UV treated with a process gas purge, such as N 2 , O z , Ar, He, H 2 , H 2 O vapor, CO 2 , C x H y , C x F y , C x H z F y , air, and combinations thereof, wherein x is an integer between 1 and 6, y is an integer between 4 and 14, and z is an integer between 1 and 3.
  • a process gas purge such as N 2 , O z , Ar, He, H 2 , H 2 O vapor, CO 2 , C x H y , C x F y , C x H z F y , air, and combinations thereof, wherein x is an integer between 1 and 6, y is an integer between 4 and 14, and z is an integer between 1 and 3.
  • the elastic modulus and/or material hardness of the UV cured dielectric materials are increased as compared to furnace (thermally) cured or uncured dielectric materials. Moreover, the treatment times are significantly less, thereby representing a significant commercial advantage.
  • a furnace cured or uncured advanced low-k material typically has an elastic modulus between about 0.5 gigapascals (Gpa) and about 8 GPa when the dielectric constant is between about 1.6 and about 2.7.
  • the elastic modulus of the UV cured dielectric material is greater than or about 2.5 GPa, and more typically between about 4 GPa and about 12 GPa.
  • the material hardness of furnace cured or uncured films are about 0.1 GPa.
  • the material hardness of the UV cured dielectric material is greater than or about 0.25 GPa, and more typically between about 0.25 GPa and about 1.2 GPa.
  • Example 1 silicon substrates that contained a proprietary CVD deposited SiCOH porogen containing films were provided by a manufacturer. The films were exposed to different ultraviolet radiation patterns at 35O 0 C in a RapidCure Exposure tool available from Axcelis Technologies, Inc. and subjected to FTIR analysis. The ultraviolet radiation pattern was produced with Type I or Type II microwave electrodeless bulbs in an inert atmosphere. A control that did not include exposure to UV radiation was included in the analysis. As shown in Figure 3, the porogen related absorbance at about 3,000cm "1 clearly illustrates a dependence on wavelength exposure.
  • Exposure to ultraviolet radiation having no substantial radiation at wavelengths less than 240nm did not exhibit any detectable amounts of porogen removal since the absorbance spectra for exposure to wavelengths greater than 240nm was clearly similar to the control.
  • exposure to broadband ultraviolet radiation at wavelengths less 240 nm resultsed in substantial removal of the porogen as is evidence by the removal of the shoulder peaks in comparison to the control. Accordingly, more effective porogen removal was observed at exposure wavelengths of about 180-240 nm compared to exposure at wavelengths greater than 240nm.
  • Example 2 silicon substrates that contained a proprietary CVD deposited SiCOH porogen containing film were provided by a manufacturer. The substrates were processed in accordance with Example 1 using a Type I microwave electrodeless bulb.
  • Figure 4 illustrates the spectra before and after UV exposure. As is evidenced by the peak absorption at about 950 cm '1 , exposure to UV radiation caused a broadening in absorption intensity related to Si-O crosslinking, indicating an increase in Si-O crosslinking (primarily caused by a decrease in Si-OH functionality, the peak associated with Si-CH 3 absorbance at about 1300 cm "1 did not change before or after exposure). Analysis of the intensity pattern related to porogen absorption at about 3000 cm "1 showed that the porogen remains in the low k dielectric film after exposure to the ultraviolet radiation.

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Abstract

L'invention concerne des procédés de formation de matériaux poreux à faible constante diélectrique à partir de films à faible constante diélectrique contenant un porogène, qui consistent à exposer le film à faible constante diélectrique à un rayonnement ultraviolet. Dans un premier mode de réalisation, le film est exposé à un rayonnement ultraviolet à large bande inférieur à 240 nm pendant une période de temps et à une intensité efficaces pour éliminer le porogène. Dans d'autres modes de réalisation, le film à faible constante diélectrique est exposé à un premier diagramme de rayonnement ultraviolet efficace pour augmenter la densité de réticulation de la matrice du film tout en maintenant la concentration du porogène sensiblement identique avant et après l'exposition au premier diagramme de rayonnement ultraviolet. Le film diélectrique à faible constante diélectrique peut être ensuite traité pour y former une structure d'interconnexion métallique, puis exposé sensiblement à un second diagramme de rayonnement ultraviolet efficace pour éliminer le porogène du film à faible constante diélectrique et former un film poreux à faible constante diélectrique.
PCT/US2005/020862 2005-06-10 2005-06-10 Procedes d'elimination et/ou de cuisson de porogene favorises par un rayonnement ultraviolet pour la formation de materiaux poreux a faible dielectrique Ceased WO2006135369A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220301853A1 (en) * 2019-07-03 2022-09-22 Lam Research Corporation Method for etching features using a targeted deposition for selective passivation

Citations (5)

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Publication number Priority date Publication date Assignee Title
EP1035183A1 (fr) * 1998-09-25 2000-09-13 Catalysts & Chemicals Industries Co., Ltd. Fluide de revetement permettant de former une pellicule protectrice a base de silice dotee d'une faible permittivite et substrat recouvert d'une pellicule protectrice de faible permittivite
US20020106500A1 (en) * 2000-03-20 2002-08-08 Ralph Albano Plasma curing process for porous low-k materials
EP1260991A1 (fr) * 2001-05-23 2002-11-27 Shipley Co. L.L.C. Matériaux poreux
EP1369907A2 (fr) * 2002-05-30 2003-12-10 Air Products And Chemicals, Inc. Matériaux à faible constante diélectrique et procédés de fabrication ceux-ci
EP1420439A2 (fr) * 2002-11-14 2004-05-19 Air Products And Chemicals, Inc. Procédé non-thermique pour la fabrication des couches à faible constante diélectrique

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035183A1 (fr) * 1998-09-25 2000-09-13 Catalysts & Chemicals Industries Co., Ltd. Fluide de revetement permettant de former une pellicule protectrice a base de silice dotee d'une faible permittivite et substrat recouvert d'une pellicule protectrice de faible permittivite
US20020106500A1 (en) * 2000-03-20 2002-08-08 Ralph Albano Plasma curing process for porous low-k materials
EP1260991A1 (fr) * 2001-05-23 2002-11-27 Shipley Co. L.L.C. Matériaux poreux
EP1369907A2 (fr) * 2002-05-30 2003-12-10 Air Products And Chemicals, Inc. Matériaux à faible constante diélectrique et procédés de fabrication ceux-ci
EP1420439A2 (fr) * 2002-11-14 2004-05-19 Air Products And Chemicals, Inc. Procédé non-thermique pour la fabrication des couches à faible constante diélectrique

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220301853A1 (en) * 2019-07-03 2022-09-22 Lam Research Corporation Method for etching features using a targeted deposition for selective passivation
US12217955B2 (en) * 2019-07-03 2025-02-04 Lam Research Corporation Method for etching features using a targeted deposition for selective passivation

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