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WO2006124387A3 - Gallium nitride high electron mobility transistor structure - Google Patents

Gallium nitride high electron mobility transistor structure Download PDF

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Publication number
WO2006124387A3
WO2006124387A3 PCT/US2006/017823 US2006017823W WO2006124387A3 WO 2006124387 A3 WO2006124387 A3 WO 2006124387A3 US 2006017823 W US2006017823 W US 2006017823W WO 2006124387 A3 WO2006124387 A3 WO 2006124387A3
Authority
WO
WIPO (PCT)
Prior art keywords
gallium nitride
electron mobility
high electron
transistor structure
mobility transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/017823
Other languages
French (fr)
Other versions
WO2006124387A2 (en
Inventor
William E. Hoke
John J. Mosca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Priority to KR1020077025621A priority Critical patent/KR101157921B1/en
Priority to JP2008512346A priority patent/JP4875701B2/en
Priority to EP06752417.3A priority patent/EP1935025B1/en
Publication of WO2006124387A2 publication Critical patent/WO2006124387A2/en
Anticipated expiration legal-status Critical
Publication of WO2006124387A3 publication Critical patent/WO2006124387A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4738—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.
PCT/US2006/017823 2005-05-19 2006-05-09 Gallium nitride high electron mobility transistor structure Ceased WO2006124387A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020077025621A KR101157921B1 (en) 2005-05-19 2006-05-09 Gallium nitride high electron mobility transistor structure
JP2008512346A JP4875701B2 (en) 2005-05-19 2006-05-09 Method for manufacturing gallium nitride high electron mobility transistor structure
EP06752417.3A EP1935025B1 (en) 2005-05-19 2006-05-09 Gallium nitride high electron mobility transistor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/132,533 2005-05-19
US11/132,533 US7226850B2 (en) 2005-05-19 2005-05-19 Gallium nitride high electron mobility transistor structure

Publications (2)

Publication Number Publication Date
WO2006124387A2 WO2006124387A2 (en) 2006-11-23
WO2006124387A3 true WO2006124387A3 (en) 2010-09-02

Family

ID=37431816

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/017823 Ceased WO2006124387A2 (en) 2005-05-19 2006-05-09 Gallium nitride high electron mobility transistor structure

Country Status (5)

Country Link
US (2) US7226850B2 (en)
EP (1) EP1935025B1 (en)
JP (1) JP4875701B2 (en)
KR (1) KR101157921B1 (en)
WO (1) WO2006124387A2 (en)

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JP2007095858A (en) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd Compound semiconductor device substrate and compound semiconductor device using the same
US20100269234A1 (en) * 2007-01-23 2010-10-28 Donald Mathew Bennett Close quarter battle chaps
JP4531071B2 (en) * 2007-02-20 2010-08-25 富士通株式会社 Compound semiconductor device
JP2008277655A (en) * 2007-05-02 2008-11-13 Hitachi Cable Ltd Semiconductor epitaxial wafer and field effect transistor
US8268707B2 (en) * 2009-06-22 2012-09-18 Raytheon Company Gallium nitride for liquid crystal electrodes
JP5343910B2 (en) * 2010-04-09 2013-11-13 富士通株式会社 Method for manufacturing compound semiconductor device
JP5668339B2 (en) * 2010-06-30 2015-02-12 住友電気工業株式会社 Manufacturing method of semiconductor device
US20120153351A1 (en) * 2010-12-21 2012-06-21 International Rectifier Corporation Stress modulated group III-V semiconductor device and related method
KR101761309B1 (en) 2011-04-19 2017-07-25 삼성전자주식회사 GaN film structure, method of fabricating the same and semiconductor device including the same
US9147701B2 (en) 2011-09-22 2015-09-29 Raytheon Company Monolithic InGaN solar cell power generation with integrated efficient switching DC-DC voltage convertor
JP2013140866A (en) * 2012-01-04 2013-07-18 Renesas Electronics Corp Semiconductor device, and method of manufacturing the same
US9632345B2 (en) 2012-05-24 2017-04-25 Raytheon Company Liquid crystal control structure, tip-tilt-focus optical phased array and high power adaptive optic
JP6392498B2 (en) * 2013-03-29 2018-09-19 富士通株式会社 Compound semiconductor device and manufacturing method thereof
AU2013389971B2 (en) 2013-05-24 2017-03-09 Raytheon Company Adaptive - optics liquid - crystal array device having meander resistors
US9620598B2 (en) * 2014-08-05 2017-04-11 Semiconductor Components Industries, Llc Electronic device including a channel layer including gallium nitride
US9620362B2 (en) * 2015-04-29 2017-04-11 Taiwan Semiconductor Manufacutring Co., Ltd. Seed layer structure for growth of III-V materials on silicon
JP6925117B2 (en) * 2016-11-18 2021-08-25 エア・ウォーター株式会社 Manufacturing method of compound semiconductor substrate and compound semiconductor substrate
CN106783968B (en) * 2016-12-26 2024-07-26 英诺赛科（珠海）科技有限公司 Semiconductor device including buffer layer of gallium aluminum nitride and gallium indium nitride and method of manufacturing the same
CN106449375B (en) * 2016-12-26 2024-07-05 英诺赛科（珠海）科技有限公司 Semiconductor device containing silicon-doped aluminum nitride layer and method for manufacturing same
US11137310B2 (en) * 2017-10-16 2021-10-05 Thomas P. White Micro-hall effect devices for simultaneous current and temperature measurements for both high and low temperature environments
JP7393138B2 (en) * 2019-06-24 2023-12-06 住友化学株式会社 Group III nitride laminate
JP7220647B2 (en) * 2019-12-17 2023-02-10 クアーズテック株式会社 Nitride semiconductor substrate and manufacturing method thereof
CN114530490A (en) * 2020-11-23 2022-05-24 苏州能讯高能半导体有限公司 Semiconductor epitaxial structure, preparation method thereof and semiconductor device
CN114250517B (en) * 2021-12-31 2023-04-14 深圳大学 A method for preparing aluminum nitride crystals by gas phase transport
CN114883405B (en) * 2022-05-30 2025-09-19 湖南三安半导体有限责任公司 Semiconductor epitaxial structure, semiconductor device and preparation method thereof
KR102792638B1 (en) * 2022-09-19 2025-04-08 한국광기술원 Schottky diode having leakage current suppression and low operating voltage and method for fabricating the same
US12243928B1 (en) 2024-10-15 2025-03-04 Imam Mohammad Ibn Saud Islamic University P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D barrier

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Also Published As

Publication number Publication date
JP2008546175A (en) 2008-12-18
JP4875701B2 (en) 2012-02-15
EP1935025A2 (en) 2008-06-25
US20060261370A1 (en) 2006-11-23
US7226850B2 (en) 2007-06-05
KR101157921B1 (en) 2012-06-22
KR20080007235A (en) 2008-01-17
US20070164313A1 (en) 2007-07-19
EP1935025B1 (en) 2015-09-09
WO2006124387A2 (en) 2006-11-23

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