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WO2006121485A2 - Circuit de detection de courant mos bidirectionnel - Google Patents

Circuit de detection de courant mos bidirectionnel Download PDF

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Publication number
WO2006121485A2
WO2006121485A2 PCT/US2006/006581 US2006006581W WO2006121485A2 WO 2006121485 A2 WO2006121485 A2 WO 2006121485A2 US 2006006581 W US2006006581 W US 2006006581W WO 2006121485 A2 WO2006121485 A2 WO 2006121485A2
Authority
WO
WIPO (PCT)
Prior art keywords
current
sensing
power
sensing devices
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/006581
Other languages
English (en)
Other versions
WO2006121485A3 (fr
Inventor
Alain Chapuis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power One Inc
Original Assignee
Power One Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power One Inc filed Critical Power One Inc
Priority to DE602006017362T priority Critical patent/DE602006017362D1/de
Priority to EP06736012A priority patent/EP1886153B1/fr
Priority to AT06736012T priority patent/ATE484016T1/de
Priority to CN2006800211913A priority patent/CN101198877B/zh
Publication of WO2006121485A2 publication Critical patent/WO2006121485A2/fr
Publication of WO2006121485A3 publication Critical patent/WO2006121485A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Definitions

  • the present invention relates to voltage regulator circuits, and more particularly to circuits for measuring the bi-directional current through a switching device of a switched mode voltage regulator circuit.
  • Switched mode voltage regulators also known as switched mode power converters
  • a switched mode voltage regulator provides a regulated DC output voltage to a load by selectively storing energy in an output inductor coupled to the load by switching the flow of current into the output inductor.
  • a buck converter is one particular type of switched mode voltage regulator that includes two power switches that are typically provided by MOSFET transistors. The power switches are referred to individually as the high side switch and the low side switch, corresponding to their placement within the buck converter as referenced to the voltage source and ground, respectively.
  • a filter capacitor coupled in parallel with the load reduces ripple of the output current.
  • a pulse width modulation (PWM) control circuit is used to control the gating of the power switches in an alternating manner to control the flow of current in the output inductor.
  • the PWM control circuit uses feedback signals reflecting the output voltage and/or current level to adjust the duty cycle applied to the power switches in response to changing load conditions.
  • Fig. 1 shows an exemplary circuit 10 to measure the current Ip through an MOS power device 12 having an active area A.
  • a second MOS device 14 having an active area A/k is used to split the load current.
  • Gate driver 16 provides the pulse modulated signal to activate the power device 12 and the second device 14.
  • An operational amplifier 20 has a non-inverting terminal coupled to the source of the power device 12 and an inverting terminal coupled to the source of the second device 14.
  • the operational amplifier 20 includes a feedback resistor 18 coupled between the inverting terminal and output terminal. The operational amplifier 20 maintains the source voltage of the second device 14 at the same level as the power device 12, such that the current through the second device 14 is l P /k.
  • the output terminal of the operational amplifier 20 provides sense voltage V Se nse that is proportional to the load current Ip. Both directions of current Ip can be measured with the circuit, but it should be appreciated that the sense voltage Vsen s ⁇ will be negative with respect to the source terminal of the power device 12 for positive load currents Ip. This requires an auxiliary negative power supply for the operational amplifier 20, which is in many cases unavailable or costly.
  • the present invention overcomes the deficiencies of the prior art by providing a current sensing circuit that measures bidirectional current through a power switching device without the need for. an auxiliary negative power source.
  • the current sensing circuit comprises a power device adapted to conduct a bidirectional current between first and second terminals thereof, first and second sensing devices operatively coupled to the power device, a sense amplifier providing first and second voltages to the first and second sensing devices, and a gate drive device providing activating signals to the power switching device and the first and second sensing devices.
  • the first and second sensing devices each has an active area that is substantially identical and significantly smaller than a corresponding active area of the power switching device.
  • the sense amplifier measures the voltage of the first sensing device and maintains the voltage on the second sensing device at the same level as the first sensing device by injecting an additional current into the second sensing device.
  • the sense amplifier further provides an output signal proportional to the bidirectional current.
  • the first and second sensing devices have k times higher resistance than a corresponding resistance of the power device when in an active state.
  • the sense amplifier comprises an operational amplifier having a first input terminal coupled to the first sensing device and a second input terminal coupled to the second sensing device, a feedback transistor coupled between the first input terminal and an output of the operational amplifier, and first and second resistors coupled to the first and second input terminals, respectively.
  • the first and second resistors may be provided by first and second matched CMOS transistors.
  • the sense amplifier comprises plural CMOS transistors.
  • Fig. 1 depicts a prior are current sensing circuit
  • Fig. 2 depicts an exemplary bi-directional current sensing circuit in accordance with an embodiment of the invention
  • Fig. 3 depicts an exemplary bi-directional current sensing circuit for a low side power device of a switched mode voltage regulator
  • Fig. 4 depicts an exemplary bi-directional current sensing circuit for a high side power device of a switched mode voltage regulator.
  • the present invention provides a bi-directional current sensing circuit for a power device that has wide linear operating range, minimal matching requirements, and fast response.
  • like element numerals are used to describe like elements illustrated in one or more figures.
  • Fig. 2 depicts a current sensing circuit 40 in accordance with an embodiment of the invention.
  • the current sensing circuit 40 is divided into four parts, including: (1) the power device 42 having an active area A through which current is to be measured; (2) a pair of MOS sensing devices 44, 46 of the same type as the power device 42, but with each having a much smaller active area A/k; (3) a sense amplifier including operational amplifier 48, MOS device 52, and loading resistors 54, 56; and (4) a gate drive device 58.
  • the gate drive device 58 applies a gate voltage to the gate terminals of power device 42 and sensing devices 44, 46 in accordance with a determined duty cycle to control their on/off states.
  • the sensing devices 44, 46 have their drain terminals coupled respectively to the drain and source of the power device 42.
  • the power device 42 is assumed to operate in the triode region, i.e., the device characteristic can be approximated by a low resistor with value RQP when in the on state.
  • the sensing devices 44, 46 are also operated in the triode region and therefore can be assumed to have k times higher resistance (RQ-I , RQ2) than power device 42 when turned on.
  • the power device 42 corresponds to the low side switch of a switched mode power converter.
  • the operational amplifier 48 has a non-inverting terminal coupled to a first voltage node (V p ) and an inverting terminal coupled to a second voltage node (V n ).
  • the first voltage node V p is coupled to the source terminal of sensing device 44 and to the drain terminal of power device 42 through resistor 56.
  • the second voltage node V n is coupled to the source terminal of sensing device 46 and to the drain terminal of power device 42 through resistor 54.
  • MOS device 52 provides a feedback path for operational amplifier 48, with the operational amplifier output driving the gate terminal of the MOS device 52 and the drain terminal of MOS device 52 coupled to the second voltage node Vn.
  • a first current source 11 is defined between supply voltage VDD and first voltage node Vp
  • a second current source I2 is defined between supply voltage VDD and source terminal of MOS device 52.
  • the operational amplifier 48 maintains the first voltage node V p at the same level as the second voltage node V n by injecting current I n into the node V n .
  • the second node voltage is determined as follows:
  • R2 is the resistance of resistor 54 and RQ 2 is the drain-source resistance of sensing device 46. If the drain-source resistance of the power device 42 (RQ P ) is much less than the drain-source resistance of sensing device 44 (RQI), then the positive node voltage is determined as follows: p ⁇ R 4- /? p If 4- R ⁇ el
  • the current l ou t is proportional to the current Ip through the power device 42.
  • This equation is valid for positive and negative currents of l p as long as the current I n remains positive.
  • the voltages V p and V n will also remain positive. It should be appreciated that this simplifies the design of the operational amplifier 48 and eliminates the need for a negative auxiliary supply for the operational amplifier.
  • l ou t will be equal to zero since Ri equals R2 and the feedback loop maintains V p equal to V n .
  • the gate drive device 58 applies a gate voltage simultaneously to the gate terminals of power device 42 and sensing devices 44, 46.
  • the gate drive device 58 may apply the gate voltage to the sensing devices 44, 46 after a certain amount of delay following application of the gate voltage to the power device 42. This delay period would ensure that the power device 42 is on before activating the sensing devices 44, 46, and thereby serve to avoid any initial voltage spikes in the measuring current.
  • Fig. 3 depicts an alternative current sensing circuit 60 that provides bi-directional current sensing within a CMOS process.
  • the circuit includes power device 62 having an active area A through which current is to be measured, and a pair of MOS sensing devices 64, 66 of the same type as the power device 62, but with each having a much smaller active area AJk.
  • the resistors 54 (R2), 56 (R1) are replaced by CMOS transistors 70, 68 operated in the triode region.
  • the operational amplifier 48 is replaced by CMOS transistors 74, 72 forming a simple amplifier circuit, with transistor 78 providing a feedback loop.
  • Gate drive device 76 applies a gate voltage to the gate terminals of power device 62 and sensing devices 64, 66 in the same manner as described above.
  • the power device 62 corresponds to the low side switch of a switched mode power converter.
  • a first voltage node (V p ) is coupled to the source terminal of sensing device 64 and to the drain terminal of power device 42 through the drain-source resistance of transistor 68.
  • a second voltage node V n is coupled to the source terminal of sensing device 66 and to the drain terminal of power device 62 through the drain-source resistance of transistor 70.
  • CMOS transistors 74, 72 have respective current sources providing a bias current to source terminals thereof and to the gate of feedback transistor 78.
  • Current source 11 provides offset current to the first voltage node V p
  • current source I2 provides offset current to the drain terminal of MOS device 78, which is in turn connected to the second voltage node V n .
  • the operation of the current sensing circuit 60 is generally the same as the embodiment of the Fig. 2.
  • transistors 68, 70 do not have to be the same type of devices MOS as sensing devices 64, 66 or power device 62.
  • transistors 68, 70 may be low voltage devices (e.g., sustaining only 5 volts), and MOS sensing devices 64, 66 and power device 62 may be devices that sustain higher voltage (e.g., 20 volts). Since power device 62 may in some applications be formed of an array of transistors connected in parallel, it would be advantageous to use two of the transistors of the array to form MOS sensing devices 64, 66 in order to achieve optimal matching.
  • the active area of the MOS sensing devices 64, 66 is k times smaller (e.g., k equal to 100,000), the impact on the resistivity of the power device 62 would be minimal. It may also be advantageous to replace CMOS transistors 72, 74 with bipolar devices to minimize the offset voltage of the amplifier. This would further improve the measuring accuracy of the overall circuit.
  • Fig. 4 depicts an alternative current sensing circuit 80 that provides bi-directional current sensing within a CMOS process.
  • the power device 82 corresponds to the high side switch of a switched mode power converter, with the current sensing circuit 80 providing a floating ground.
  • power device 82 has an active area A and MOS sensing devices 84, 86 each have a much smaller active area A/k.
  • CMOS transistors 90, 88 operate in the triode region to provide the resistors R1, R2.
  • CMOS transistors 94, 92 provide the amplifier circuit, with transistor 96 providing a feedback loop.
  • Gate drive device 98 applies a gate voltage to the gate terminals of power device 92 and sensing devices 94, 96 in the same manner as described above.
  • CMOS transistors 90, 88, and 94, 92 are reversed in contrast to the preceding embodiment. Accordingly, a first voltage node (V p ) is coupled to the drain terminal of sensing device 86 and to the source terminal of power device 82 through the drain-source resistance of transistor 88, and a second voltage node (V n ) is coupled to the drain terminal of sensing device 84 and to the drain terminal of power device 82 through the drain-source resistance of transistor 90.
  • the current sources 11, I2, IB1, IB2 are each referenced to ground.
  • exemplary power device 82 is illustrated in this and the preceding embodiments as being an NMOS power device, although it should be appreciated that the circuit could be readily adapted by persons having ordinary skill in the art for use with a PMOS power device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

La présente invention concerne un circuit de détection de courant comprenant un dispositif de puissance pouvant guider un courant bidirectionnel entre une première et une deuxième borne de celui-ci, un premier et un deuxième dispositif de détection couplés de manière opérationnelle au dispositif de puissance, un amplificateur de détection fournissant une première et une deuxième tension au premier et au deuxième dispositif de détection, ainsi qu'un dispositif de commande de grille fournissant des signaux d'activation au dispositif de commutation de puissance et au premier et au deuxième dispositif de détection. Le premier et le deuxième dispositif de détection comprennent chacun une zone active qui est substantiellement identique à une zone active correspondante du dispositif de commutation de puissance et sensiblement plus petite que celle-ci. L'amplificateur de détection mesure la tension du premier dispositif de détection et maintient la tension sur le deuxième dispositif de détection au même niveau que celle du premier dispositif de détection en injectant un courant supplémentaire dans le deuxième dispositif de détection. L'amplificateur de détection fournit également un signal de sortie proportionnel au courant bidirectionnel. Le premier et le deuxième dispositif de détection présentent une résistance k fois supérieure à une résistance correspondante du dispositif de puissance lorsqu'ils sont dans un état actif.
PCT/US2006/006581 2005-05-10 2006-02-22 Circuit de detection de courant mos bidirectionnel Ceased WO2006121485A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE602006017362T DE602006017362D1 (de) 2005-05-10 2006-02-22 Bidirektionale mos-strommessschaltung
EP06736012A EP1886153B1 (fr) 2005-05-10 2006-02-22 Circuit de detection de courant mos bidirectionnel
AT06736012T ATE484016T1 (de) 2005-05-10 2006-02-22 Bidirektionale mos-strommessschaltung
CN2006800211913A CN101198877B (zh) 2005-05-10 2006-02-22 双向mos电流读出电路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/126,429 2005-05-10
US11/126,429 US7327149B2 (en) 2005-05-10 2005-05-10 Bi-directional MOS current sense circuit

Publications (2)

Publication Number Publication Date
WO2006121485A2 true WO2006121485A2 (fr) 2006-11-16
WO2006121485A3 WO2006121485A3 (fr) 2007-04-26

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Application Number Title Priority Date Filing Date
PCT/US2006/006581 Ceased WO2006121485A2 (fr) 2005-05-10 2006-02-22 Circuit de detection de courant mos bidirectionnel

Country Status (7)

Country Link
US (1) US7327149B2 (fr)
EP (1) EP1886153B1 (fr)
KR (1) KR100971056B1 (fr)
CN (1) CN101198877B (fr)
AT (1) ATE484016T1 (fr)
DE (1) DE602006017362D1 (fr)
WO (1) WO2006121485A2 (fr)

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DE602006017362D1 (de) 2010-11-18
US20060255783A1 (en) 2006-11-16
EP1886153A4 (fr) 2009-05-27
KR20080009156A (ko) 2008-01-24
CN101198877B (zh) 2011-05-04
WO2006121485A3 (fr) 2007-04-26
EP1886153A2 (fr) 2008-02-13
US7327149B2 (en) 2008-02-05
KR100971056B1 (ko) 2010-07-20
EP1886153B1 (fr) 2010-10-06
CN101198877A (zh) 2008-06-11
ATE484016T1 (de) 2010-10-15

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