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WO2006031366A3 - Full sequence metal and barrier layer electrochemical mechanical processing - Google Patents

Full sequence metal and barrier layer electrochemical mechanical processing Download PDF

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Publication number
WO2006031366A3
WO2006031366A3 PCT/US2005/029357 US2005029357W WO2006031366A3 WO 2006031366 A3 WO2006031366 A3 WO 2006031366A3 US 2005029357 W US2005029357 W US 2005029357W WO 2006031366 A3 WO2006031366 A3 WO 2006031366A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing
barrier layer
substrate
mechanical processing
full sequence
Prior art date
Application number
PCT/US2005/029357
Other languages
French (fr)
Other versions
WO2006031366A2 (en
Inventor
Daxin Mao
Renhe Jia
Zhihong Wang
Yuan Tian
Feng Q Liu
Vladimir Galburt
Sen Hou Ko
Stan D Tsai
Liang-Yuh Chen
Yongqi Hu
Original Assignee
Applied Materials Inc
Daxin Mao
Renhe Jia
Zhihong Wang
Yuan Tian
Feng Q Liu
Vladimir Galburt
Sen Hou Ko
Stan D Tsai
Liang-Yuh Chen
Yongqi Hu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/940,603 external-priority patent/US20050077188A1/en
Priority claimed from US10/941,060 external-priority patent/US7084064B2/en
Application filed by Applied Materials Inc, Daxin Mao, Renhe Jia, Zhihong Wang, Yuan Tian, Feng Q Liu, Vladimir Galburt, Sen Hou Ko, Stan D Tsai, Liang-Yuh Chen, Yongqi Hu filed Critical Applied Materials Inc
Priority to JP2007531184A priority Critical patent/JP2008513596A/en
Publication of WO2006031366A2 publication Critical patent/WO2006031366A2/en
Publication of WO2006031366A3 publication Critical patent/WO2006031366A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

A method for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, pressing the substrate against a processing pad assembly with a force less than about 2 psi, providing motion between the substrate and pad assembly in contact therewith and electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station.
PCT/US2005/029357 2004-09-14 2005-08-18 Full sequence metal and barrier layer electrochemical mechanical processing WO2006031366A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007531184A JP2008513596A (en) 2004-09-14 2005-08-18 Electromechanical treatment of full-sequence metal and barrier layers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/940,603 US20050077188A1 (en) 2002-01-22 2004-09-14 Endpoint for electrochemical processing
US10/941,060 2004-09-14
US10/941,060 US7084064B2 (en) 2004-09-14 2004-09-14 Full sequence metal and barrier layer electrochemical mechanical processing
US10/940,603 2004-09-14

Publications (2)

Publication Number Publication Date
WO2006031366A2 WO2006031366A2 (en) 2006-03-23
WO2006031366A3 true WO2006031366A3 (en) 2006-06-29

Family

ID=35788465

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/029357 WO2006031366A2 (en) 2004-09-14 2005-08-18 Full sequence metal and barrier layer electrochemical mechanical processing

Country Status (3)

Country Link
JP (1) JP2008513596A (en)
KR (1) KR100905561B1 (en)
WO (1) WO2006031366A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009102694A (en) * 2007-10-23 2009-05-14 Ebara Corp Composite electrolytic polishing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030136684A1 (en) * 2002-01-22 2003-07-24 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US6693036B1 (en) * 1999-09-07 2004-02-17 Sony Corporation Method for producing semiconductor device polishing apparatus, and polishing method
US20040043608A1 (en) * 2002-08-27 2004-03-04 Souichi Katagiri Method for manufacturing semiconductor device and apparatus for manufacturing thereof
US6739953B1 (en) * 2003-04-09 2004-05-25 Lsi Logic Corporation Mechanical stress free processing method
US20040134792A1 (en) * 2000-02-17 2004-07-15 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03100987U (en) * 1990-01-30 1991-10-22
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693036B1 (en) * 1999-09-07 2004-02-17 Sony Corporation Method for producing semiconductor device polishing apparatus, and polishing method
US20040134792A1 (en) * 2000-02-17 2004-07-15 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20030136684A1 (en) * 2002-01-22 2003-07-24 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US20040043608A1 (en) * 2002-08-27 2004-03-04 Souichi Katagiri Method for manufacturing semiconductor device and apparatus for manufacturing thereof
US6739953B1 (en) * 2003-04-09 2004-05-25 Lsi Logic Corporation Mechanical stress free processing method

Also Published As

Publication number Publication date
JP2008513596A (en) 2008-05-01
KR20070046187A (en) 2007-05-02
KR100905561B1 (en) 2009-07-02
WO2006031366A2 (en) 2006-03-23

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