[go: up one dir, main page]

WO2006001558A1 - Composition d'une bouillie cmp a haute selectivite pour procede sti dans la fabrication d'un semi-conducteur - Google Patents

Composition d'une bouillie cmp a haute selectivite pour procede sti dans la fabrication d'un semi-conducteur Download PDF

Info

Publication number
WO2006001558A1
WO2006001558A1 PCT/KR2004/002318 KR2004002318W WO2006001558A1 WO 2006001558 A1 WO2006001558 A1 WO 2006001558A1 KR 2004002318 W KR2004002318 W KR 2004002318W WO 2006001558 A1 WO2006001558 A1 WO 2006001558A1
Authority
WO
WIPO (PCT)
Prior art keywords
slurry composition
isothiazoline
polishing
surfactant
salts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2004/002318
Other languages
English (en)
Inventor
Chang-Il Oh
Kil-Sung Lee
Tae-Kyu Kim
Won-Lae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cheil Industries Inc
Original Assignee
Cheil Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Industries Inc filed Critical Cheil Industries Inc
Publication of WO2006001558A1 publication Critical patent/WO2006001558A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Definitions

  • the present invention relates to a high selectivity CMP slurry for an STI process.
  • Background Art Recently, advancement of a technique for preparing a semiconductor device is driven forward based on a micro-processing technique, and particularly miniaturization of an element isolation film isolating elements from each other is becoming an important issue of a micronizing technique.
  • LOCOS Local Oxidation of Silicon
  • this LOCOS technique has a disadvantage such as a decreased active area due to lateral diffusion of the element isolation film and a bird's beak. Therefore, the LOCOS technique cannot be applied to a large capacity memory in which design dimensions of elements are reduced to less than the submicron level and thus a new element isolation technique is needed.
  • STI Shallow Trench Isolation
  • SiO silicon dioxide
  • SiN silicon nitride
  • a removing rate of SiN by STI CMP is near to 0, while a removing rate of SiO by STI CMP is as rapid as possible.
  • the term "selectivity" as used herein is intended to describe the ratio of the SiN removing rate : the SiO removing rate by the same slurry during the CMP process. Se ⁇ lectivity is calculated by dividing the SiO removing rate (typically, expressed as A/ min) by the SiN removing rate.
  • a conventional CMP slurry composition often shows selectivity of less than 10, and typically about 4.
  • the currently used general-purpose CMP slurry composition has a low se ⁇ lectivity of about 4 of removing silicon nitride relative to silicon dioxide, silicon nitride is polished above the allowable range for etching in a practical process. Con ⁇ sequently, silicon nitride patterns may not be uniformly removed from parts of the wafer during the CMP process, and thus variation in the thickness of the silicon nitride throughout the wafer is inevitably significant. Fig.
  • FIG. 5 shows a cross-section of an element having erosion such that a region in which a wiring is concentrated is overpolished as compared to a region having a low wiring density such as a wiring isolation region, and thus the surface of the region having a wiring concentrated thereon is more dented than other regions.
  • This matter may be a problem in particular when the surface of the semiconductor wafer has simultaneously high and low density patterns, as shown in Fig. 2. That is, loss of silicon nitride due to overpolishing is caused in a wiring concentrated region, while silicon dioxide remaining on the surface of silicon nitride due to underpolishing is present in a region where the wiring is distributed throughout a broad region.
  • This phenomenon causes a decreased margin of a subsequent element production process, as shown in Fig.
  • patent publication WO99/43761 discloses a slurry composition for a semiconductor device comprising a water soluble organic compound having at least one functional group selected from water, cerium oxide, -COOH group, -COOM group wherein M is an atom or functional group which may be substituted with a hydrogen atom to form a salt, -SO H group, and SO M group wherein M is an atom or functional group which may be substituted with a hydrogen atom to form a salt and the above-mentioned composition to which a chelating agent is added, if desired, and further a method of forming STI using the same.
  • US Patent No. 5,738,800 discloses a composition comprising water, grains (abrasive particles), a surfactant, and a complexing agent having two or more functional groups which forms a complex with silica and silicon nitride and a method of forming STI using the same.
  • the surfactant used in association with the complexing agent in the slurry is not used for general purposes, that is stable dispersion of particles, but it is believed that the surfactant affects the polishing rate of silicon nitride.
  • interaction therebetween is specifically mentioned.
  • the above-mentioned composition exhibits selectivity superior to that of the general- purpose slurry, but use thereof is limitedly effective only within a narrow range of pH 6 to 7. Further, there is stated that addition of surfactant is necessary, and specifically the polishing composition to which about 0.1% to about 0.5% of a hydrogen fluoride based surfactant was added is used.
  • Japanese Patent Laid-Open Publication No. 2000-17195 discloses a cerium oxide slurry composition comprising cerium oxide particles, a copolymer of ammonium acrylate and methyl acrylate and water. This slurry composition has a relatively high stability and thus is not separated into two layers even when it is allowed to stand for more than 3 days after preparation thereof.
  • 3130279 discloses a slurry composition for polishing comprising an abrasive such as ceria and a high molecular weight electrolyte with charges having different ionicity relative to charges associated with the abrasive, wherein the high molecular weight electrolyte has a molecular weight of about 500 to about 10,000, and an amount thereof relative to an abrasive ranges from about 5% by weight to about 50% by weight.
  • An insulating film layer formed on an unpatterned substrate may be polished at an excellent polishing rate using this slurry composition. However, where the insulating film layer formed on a patterned substrate is polished using this slurry composition as described above, dishing is deeply produced and a flat surface cannot be obtained.
  • US Patent No. 5,759,917 discloses a slurry composition which selectively polishes silicon dioxide, which is an overfill layer, in preference to silicon nitride, which is a stopping layer, during the manufacture of integrated circuits and semiconductors.
  • This slurry composition is comprised of carboxylic acid, a salt, and a water-soluble ceria compound and has a pH of about 3 to 11.
  • This patent states that the slurry composition may exhibit selectivity of 5 to 100, but the highest selectivity reported is only 34.89 and most of the Examples therein show a limit of selectivity of less than 20.
  • European Patent Publication No. 0 786 504 A2 discloses a CMP slurry composition comprising silicon nitride particles, water and acid. This slurry composition exhibits a high selectivity of polishing silicon dioxide relative to silicon nitride. The highest selectivity of Examples thereof reported is 32.5, while most of Examples therein shows a limit with a selectivity of less than 20.
  • European Patent Publication No. 0 846 740 Al discloses a CMP slurry composition for an STI process comprising an abrasive, and a high molecular weight electrolyte having a molecular weight of about 500 to 10,000, for example polyethyleneimine.
  • 6,616,514 discloses a CMP slurry composition
  • a CMP slurry composition comprising an abrasive, water, and an organic polyol having at least three hydroxyl groups that do not dissociate.
  • ceria abrasive particles are used as an abrasive and the organic polyol is at least one selected from the group consisting of mannitol, sorbitol, mannose, xylitol, sorbose, sucrose, and dextrin.
  • this slurry composition is reported to exhibit a high selectivity between silicon nitride and silicon dioxide over a broad pH range of 2 to 12, but the organic polyol contained therein, which is a biodegradable material, is easily putrefied in a range of pH 2 to 9, resulting in remarkably deteriorated storage stability. Therefore, the practically usable pH range is limited to pH of 9 to 12.
  • a slurry composition that increases selectivity between silicon dioxide and silicon nitride by the CMP process is disclosed (See A High Oxide : Mtride Se ⁇ lectivity CMP Slurry for Shallow Trench Isolation, by Sharath Hosali and Ray Lavoie, in Electromechanical Society Proceedings Wume 98-7 (1998), pages 218-234).
  • This slurry composition comprises a unique liquid chemical that is not opened to the public and inhibits the polishing rate of a cerium oxide abrasive and silicon nitride.
  • This reference has reported that a high selectivity can be obtained in a blanket silicon wafer, but when compared with the general-purpose slurry in the patterned silicon wafer, the selectivity obtained is almost the same therebetween.
  • the STI CMP process strongly requires a slurry composition exhibiting high-polishing rate selectivity between a silicon dioxide film and a silicon nitride film, less damage to a polished surface, good washing properties, inhibition of dishing and effectiveness in a broad pH range.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a slurry composition for polishing a semiconductor device which provides high selectivity of removing rate of silicon dioxide (SiO ) in preference to silicon nitride (SiN), which can be very preferably used in a CMP process due to high controllability, which produces less scratches after a polishing process thus effecting good control of polishing quality, which inhibits a dishing phenomenon and is effective in a broad pH region, and also which has a good storage stability.
  • SiO silicon dioxide
  • SiN silicon nitride
  • the STI CMP process is a slurry composition exhibiting high-polishing rate se ⁇ lectivity between a silicon dioxide film and a silicon nitride film, less damage to a polished surface, good washing properties, inhibition of dishing and effectiveness in a broad pH range.
  • Fig. 2 is a cross-sectional view of an element polished with (1) a general-purpose CMP slurry (selectivity of 3 to 4) and (2) a high selectivity CMP slurry (selectivity of more than 30);
  • Fig. 3 is a cross-sectional view of an element using (1) a high selectivity CMP slurry (selectivity of more than 30) and (2) a general-purpose CMP slurry (selectivity of 3 to 4) in an STI process;
  • Fig. 4 is a cross-sectional view of an element having Dishing;
  • Fig. 5 is a cross-sectional view of an element having Erosion; and
  • Fig. 6 schematically shows a method for measuring an amount of Dishing.
  • the present invention relates to a high selectivity CMP slurry composition comprising a saccharide, and more specifically to a CMP slurry composition comprising a metal oxide, a surfactant, a saccharide, a pH-adjusting agent, a preservative, a stabilizer and deionized water.
  • a slurry composition in accordance with the present invention uses deionized water as a solvent, and comprises 0.1 to 20% by weight of the metal oxide, 0.01 to 3% by weight of the surfactant, 0.001 to 5% by weight of the saccharide, 0.001 to 5% by weight of the pH adjusting agent, 0.0001 to 1% by weight of the preservative and 0.00001 to 1% by weight of the stabilizer.
  • the metal oxide used in the present invention is an abrasive performing a physical polishing action in the CMP process and is not particularly limited to kinds thereof as long as it does not interfere with the purpose of the present invention.
  • materials prepared by fuming or sol-gel methods may be used, such as silica (SiO ), alumina (Al O ), ceria (CeO ), zirconia (ZrO ), molybdenum trioxide (MoO ) or titania 2 3 2 2 3 (TiO ).
  • a primary average particle size of the metal oxide is preferably 10 to 100 nm and secondary average particle size is 50 to 400 nm.
  • the amount of the metal oxide added is 0.1 to 20% by weight based on the total slurry composition.
  • an anionic surfactant may include, for example, carboxylic acid and salts thereof, sulfuric ester and salts thereof, sulfonic acid and salts thereof and phosphoric ester and salts thereof;
  • a cationic surfactant may include, for example, primary amine and salts thereof, secondary amine and salts thereof, tertiary amine and salts thereof and quaternary amine and salts thereof;
  • a non-ionic surfactant may include, for example polyethylene glycol-type or polyhydroxy alcohol-type.
  • the amount thereof added is 0.01 to 3% by weight.
  • the saccharide used in the present invention it is preferred to use galactose, arabinose, ribose, xylose, maltitol, lactose, maltose or pullulan.
  • Addition amount thereof is preferably 0.001 to 5% by weight. Where the amount added is less than 0.001% by weight or exceeds 5% by weight, a problem is raised that the desired se ⁇ lectivity cannot be exhibited.
  • saccharide has a large number of hydrophilic hydroxyl (OH) groups as compared to other known materials and these hydroxyl groups have a good affinity for SiN and thus form a protective layer for protecting SiN against polishing.
  • OH hydrophilic hydroxyl
  • the addition amount thereof is 0.0001 to 1% by weight.
  • the amount added is less than 0.0001% by weight, the desired preservative effect cannot be expressed, and where it exceeds 1% by weight, polishing per ⁇ formances are lowered and waste liquor treatment is difficult.
  • the stabilizer used in the present invention may include, for example sodium bromate (NaBrO ), magnesium chloride, magnesium nitrate and copper nitrate trihydrate and propylene glycol. Preferably, it is added in an amount of 0.00001 to 1% by weight. [46] Where the amount of the stabilizer added is less than 0.00001% by weight, the prolonged stable preservative effect cannot be obtained.
  • the present invention provides a package for preparing a CMP slurry composition
  • a package for preparing a CMP slurry composition comprising a first container containing a metal oxide, a surfactant, a pH adjusting agent and deionized water and a second container containing a surfactant, a saccharide, a pH adjusting agent, a preservative, a stabilizer and deionized water.
  • the slurry composition can be prepared by mixing the contents of the first container and second container.
  • n&k-1500 n&k-1500
  • a silicon nitride film fabricated by a low pressure CVD method was polished under the same conditions as in the silicon dioxide, and then changes in the film thickness before and after polishing were determined and polishing rate was calculated.
  • Scratches on the surface of the insulating film were carefully examined using Surfscan-6420 (KLA-Tencor).
  • Polishing machine [75] [76] Polishing machine and measuring insturment [77] [78] Polishing machine : UMPLA-211 $ UMCLEAN ( Semicontech Co., Ltd.) [79] Polishing pad : IC1000/SubaIV Stacked (Rodel) [80] Wafer : PE-TEOS 8 inch blanket wafer (15000?) [81] Machine for measuring thickness: n&k-1500 (n&k) [82] Defect detector : Surfscan-64-20 (KLA-Tencor Corp.) [83] Machine for measuring the amount of dishing : Opti-Probe 2600 (Therma Wave Inc.) [84] [85] Conditions for polishing [86] [87] Rate of revolution of spindle : 70 rpm [88] Rate of revolution of Platen : 24 rpm [89] Pressure of Wafer : 3.5 psi [90] Pressure of Retainer Ring : 8.0 psi [91] Pressure of Conditioner Ring : 4.0 psi
  • Example 3 [103] [104] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that ribose was used instead of galactose, as the saccharide in solution that is applied to the primary mixture, and evaluation of polishing was performed. [105] [106] Example 4 [107] [108] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that xylose was used instead of galactose, as the saccharide in solution that is applied to the primary mixture, and evaluation of polishing was performed.
  • Example 5 [111] [112] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that maltitol was used instead of galactose, as the saccharide in solution that is applied to the primary mixture, and evaluation of polishing was performed. [113] [114] Example 6 [115] [116] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that lactose was used instead of galactose, as the saccharide in solution that is applied to the primary mixture, and evaluation of polishing was performed.
  • Example 7 [119] [120] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that maltose was used instead of galactose, as the saccharide in solution that is applied to the primary mixture, and 1.29 g of sulfuric acid was used, and evaluation of polishing was performed. [121] [122] Example 8 [123] [124] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that maltose was used instead of galactose, as the saccharide in solution that is applied to the primary mixture and 0.12 g of 1% by weight of KOH is used instead of sulfuric acid, and evaluation of polishing was performed.
  • Example 9 [127] [128] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that maltose was used instead of galactose, as the saccharide in solution that is applied to the primary mixture, and 0.52 g of 1% by weight of KOH was used instead of sulfuric acid, and evaluation of polishing was performed. [129] [130] Example 10 [131] [132] A slurry composition was prepared following the same conditions and procedure as in Example 1, except that pullulan was used instead of galactose, as the saccharide in solution that is applied to the primary mixture, and evaluation of polishing was performed.
  • a slurry composition was prepared following the same conditions and procedure as in Example 1, except that DIW (Deionized Water) was used instead of the saccharide in solution that is applied to the primary mixture, and evaluation of polishing was performed.
  • DIW Deionized Water
  • Comparative Example 2 [139]
  • a slurry composition was prepared following the same conditions and procedure as in Example 1, except that 1 g of Darvan C (aqueous ammonium polymethacrylate solution) was used instead of the saccharide in solution that is applied to the primary mixture, and evaluation of polishing was performed.
  • nitride fabricated by the low pressure CVD method had a uniform thickness over the
  • Example 12 [176] A slurry composition was prepared following the same conditions and procedure as in Example 11, except that 5-chloro-2-methyl-4-isothizolin-3-one (CMI) was used instead of BI as preservative and magnesium nitrate (MN) was used instead of MC as stabilizer in the solution applied to the primary mixture, and evaluation of polishing was performed.
  • CMI 5-chloro-2-methyl-4-isothizolin-3-one
  • MN magnesium nitrate
  • Example 13 [180] [181] A slurry composition was prepared following the same conditions and procedure as in Example 11, except that 2-methyl-4-isothizolin-3-one (MI) was used instead of BI as preservative and copper nitrate trihydrate (CNT) was used instead of MC as stabilizer in the solution applied to the primary mixture, and evaluation of polishing was performed. [182] [183] Comparative Example 5 [184] [185] A slurry composition was p ⁇ in Example 11, except that hydrogen peroxide (HP) was used as preservative in the solution applied to the primary mixture and a stabilizer was not used, and evaluation of polishing was performed.
  • HP hydrogen peroxide
  • a slurry composition was prepared following the same conditions and procedure as in Example 11, except that tetramethyl ammonium chloride (TMACl) was used as preservative in the solution applied to the primary mixture and a stabilizer was not used, and evaluation of polishing was performed.
  • TMACl tetramethyl ammonium chloride
  • Comparative Example 7 [192] [193] A slurry composition was prepared following the same conditions and procedure as in Example 11, except that stabilizer MC was not used in solution applied to the primary mixture and a stabilizer was not used, and evaluation of polishing was performed.
  • the CMP slurry composition of the present invention is effective at selectively removing silicon dioxide in preference to silicon nitride from the surface of the semi ⁇ conductor device in the STI CMP process. Further, it produces fewer scratches after polishing and thus it is possible to maintain high quality of polishing, and to inhibit dishing thereof, it is effective over a broad pH range, and exhibits excellent storage stability.
  • the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modi ⁇ fications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne une composition d'une bouillie CMP à haute sélectivité, comprenant un saccharide et, plus particulièrement, une composition d'une bouillie CMP à haute sélectivité pour un procédé STI d'un semi-conducteur, comprenant un oxyde métallique, un agent tensioactif, un saccharide, un agent d'ajustement du pH, un agent de conservation, un stabilisant et de l'eau déionisée. L'invention concerne en conséquence une composition d'une bouillie CMP fournissant une haute sélectivité de vitesse d'élimination du dioxyde de silicium (SiO2), préférentiellement au nitrure de silicium (SiN), composition qui est de préférence utilisée dans un procédé CMP, en raison de sa capacité de contrôle élevée, ce qui entraîne moins de rayures après un polissage, tout en permettant d'effectuer un bon contrôle de la qualité de polissage, inhibant les phénomènes de formation de creux. La composition selon l'invention est efficace sur une vaste plage de pH et présente une bonne stabilité au stockage.
PCT/KR2004/002318 2004-06-25 2004-09-13 Composition d'une bouillie cmp a haute selectivite pour procede sti dans la fabrication d'un semi-conducteur Ceased WO2006001558A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2004-0048390 2004-06-25
KR1020040048390A KR100637772B1 (ko) 2004-06-25 2004-06-25 반도체 ｓｔｉ 공정용 고선택비 ｃｍｐ 슬러리 조성물

Publications (1)

Publication Number Publication Date
WO2006001558A1 true WO2006001558A1 (fr) 2006-01-05

Family

ID=35781949

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2004/002318 Ceased WO2006001558A1 (fr) 2004-06-25 2004-09-13 Composition d'une bouillie cmp a haute selectivite pour procede sti dans la fabrication d'un semi-conducteur

Country Status (3)

Country Link
KR (1) KR100637772B1 (fr)
TW (1) TWI329668B (fr)
WO (1) WO2006001558A1 (fr)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008187195A (ja) * 2006-12-05 2008-08-14 Samsung Electro-Mechanics Co Ltd 白色発光装置及びこれを用いた白色光源モジュール
US20110124195A1 (en) * 2008-07-24 2011-05-26 Techno Semichem Co., Ltd. Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher
WO2012032466A1 (fr) 2010-09-08 2012-03-15 Basf Se Compositions de polissage aqueuses contenant des dioxydes de diazénium n-substitués et/ou des sels d'oxyde de n'-hydroxy-diazénium
JP2015129217A (ja) * 2014-01-07 2015-07-16 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
EP2614121A4 (fr) * 2010-09-08 2016-03-09 Basf Se Composition aqueuse de polissage et procédé de polissage mécano-chimique de substrats pour des dispositifs électriques, mécaniques et optiques
CN105934487A (zh) * 2014-01-31 2016-09-07 巴斯夫欧洲公司 包含聚氨基酸的化学机械抛光(cmp)组合物
JP2019099590A (ja) * 2017-11-28 2019-06-24 花王株式会社 研磨液組成物
EP3587525A1 (fr) * 2018-06-29 2020-01-01 Versum Materials US, LLC Polissage mécanique et chimique de plats dans une tranchée à faible degré d'oxydation
EP3647384A1 (fr) * 2018-10-31 2020-05-06 Versum Materials US, LLC Suppression des taux d'enlèvement de sin et réduction du creusage de tranchées à oxyde pour un procédé d'isolation de tranchée peu profonde (sti)
EP3686257A1 (fr) * 2019-01-25 2020-07-29 Versum Materials US, LLC Polissage par planarisation mécanique et chimique (cmp) d'isolation de tranchée peu profonde (sti) à faible concentration d'abrasif et combinaison d'additifs chimiques
WO2021113285A1 (fr) * 2019-12-04 2021-06-10 Versum Materials Us, Llc Polissage de planarisation chimico-mécanique (cmp) d'isolation par tranchées peu profondes (sti) à vitesse élevée d'élimination de film d'oxyde
US11072726B2 (en) 2018-06-29 2021-07-27 Versum Materials Us, Llc Low oxide trench dishing chemical mechanical polishing
JP2022553105A (ja) * 2019-10-24 2022-12-21 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物
US11549034B2 (en) 2018-08-09 2023-01-10 Versum Materials Us, Llc Oxide chemical mechanical planarization (CMP) polishing compositions
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
CN116063928A (zh) * 2021-11-01 2023-05-05 凯斯科技股份有限公司 抛光浆料组合物

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100731112B1 (ko) * 2006-07-24 2007-06-22 동부일렉트로닉스 주식회사 포토 레지스트를 제거하기 위한 ｃｍｐ 슬러리
KR100814416B1 (ko) 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
KR100829594B1 (ko) 2006-10-10 2008-05-14 삼성전자주식회사 화학 기계적 연마용 슬러리 조성물 및 이를 이용한 반도체메모리 소자의 제조 방법
KR101481573B1 (ko) 2008-02-12 2015-01-14 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물 및 이를 이용한화학적 기계적 연마 방법
CN102952466A (zh) * 2011-08-24 2013-03-06 安集微电子（上海）有限公司 一种化学机械抛光液
KR102543679B1 (ko) * 2017-11-30 2023-06-16 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
EP4157955A4 (fr) * 2020-05-29 2024-08-21 Versum Materials US, LLC Compositions de polissage de planarisation mécano-chimique à faible bombage d'oxyde pour des applications d'isolation de tranchée peu profonde et leurs procédés de fabrication
KR20240062240A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000109802A (ja) * 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
WO2000039844A1 (fr) * 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
WO2003094216A1 (fr) * 2002-04-30 2003-11-13 Hitachi Chemical Co., Ltd. Fluide de polissage et procede de polissage
KR20040019897A (ko) * 2002-08-28 2004-03-06 카오카부시키가이샤 연마액 조성물
KR20040031621A (ko) * 2002-10-04 2004-04-13 카오카부시키가이샤 연마액 조성물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000109802A (ja) * 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
WO2000039844A1 (fr) * 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
WO2003094216A1 (fr) * 2002-04-30 2003-11-13 Hitachi Chemical Co., Ltd. Fluide de polissage et procede de polissage
KR20040019897A (ko) * 2002-08-28 2004-03-06 카오카부시키가이샤 연마액 조성물
KR20040031621A (ko) * 2002-10-04 2004-04-13 카오카부시키가이샤 연마액 조성물

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9392670B2 (en) 2006-12-05 2016-07-12 Samsung Electronics Co., Ltd. White light emitting device and white light source module using the same
JP2008187195A (ja) * 2006-12-05 2008-08-14 Samsung Electro-Mechanics Co Ltd 白色発光装置及びこれを用いた白色光源モジュール
US8317348B2 (en) 2006-12-05 2012-11-27 Samsung Led Co., Ltd. White light emitting device and white light source module using the same
US20110124195A1 (en) * 2008-07-24 2011-05-26 Techno Semichem Co., Ltd. Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher
EP2614122A4 (fr) * 2010-09-08 2014-01-15 Basf Se Compositions de polissage aqueuses contenant des dioxydes de diazénium n-substitués et/ou des sels d'oxyde de n'-hydroxy-diazénium
CN103210047B (zh) * 2010-09-08 2018-07-17 巴斯夫欧洲公司 含n取代的二氮烯*二氧化物和/或n’-羟基-二氮烯*氧化物盐的含水抛光组合物
WO2012032466A1 (fr) 2010-09-08 2012-03-15 Basf Se Compositions de polissage aqueuses contenant des dioxydes de diazénium n-substitués et/ou des sels d'oxyde de n'-hydroxy-diazénium
EP2614121A4 (fr) * 2010-09-08 2016-03-09 Basf Se Composition aqueuse de polissage et procédé de polissage mécano-chimique de substrats pour des dispositifs électriques, mécaniques et optiques
CN103210047A (zh) * 2010-09-08 2013-07-17 巴斯夫欧洲公司 含n取代的二氮烯*二氧化物和/或n’-羟基-二氮烯*氧化物盐的含水抛光组合物
JP2013540850A (ja) * 2010-09-08 2013-11-07 ビーエーエスエフ ソシエタス・ヨーロピア Ｎ−置換ジアゼニウムジオキシド及び／又はｎ’−ヒドロキシジアゼニウムオキシド塩を含有する水性研磨剤組成物
JP2015129217A (ja) * 2014-01-07 2015-07-16 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
CN105934487B (zh) * 2014-01-31 2018-10-26 巴斯夫欧洲公司 包含聚氨基酸的化学机械抛光(cmp)组合物
EP3099756A4 (fr) * 2014-01-31 2017-08-02 Basf Se Composition de polissage mécano-chimique (cmp) contenant un poly( acide aminé)
CN105934487A (zh) * 2014-01-31 2016-09-07 巴斯夫欧洲公司 包含聚氨基酸的化学机械抛光(cmp)组合物
JP2019099590A (ja) * 2017-11-28 2019-06-24 花王株式会社 研磨液組成物
JP7045171B2 (ja) 2017-11-28 2022-03-31 花王株式会社 研磨液組成物
EP3587525A1 (fr) * 2018-06-29 2020-01-01 Versum Materials US, LLC Polissage mécanique et chimique de plats dans une tranchée à faible degré d'oxydation
JP2020002359A (ja) * 2018-06-29 2020-01-09 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 低酸化物トレンチディッシング化学機械研磨
US11692110B2 (en) 2018-06-29 2023-07-04 Versum Materials Us, Llc Low oxide trench dishing chemical mechanical polishing
US11667839B2 (en) 2018-06-29 2023-06-06 Versum Materials Us, Llc Low oxide trench dishing chemical mechanical polishing
US11072726B2 (en) 2018-06-29 2021-07-27 Versum Materials Us, Llc Low oxide trench dishing chemical mechanical polishing
US11078417B2 (en) 2018-06-29 2021-08-03 Versum Materials Us, Llc Low oxide trench dishing chemical mechanical polishing
JP7121696B2 (ja) 2018-06-29 2022-08-18 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 低酸化物トレンチディッシング化学機械研磨
US11549034B2 (en) 2018-08-09 2023-01-10 Versum Materials Us, Llc Oxide chemical mechanical planarization (CMP) polishing compositions
CN111117492A (zh) * 2018-10-31 2020-05-08 弗萨姆材料美国有限责任公司 对于浅沟槽隔离(STI)工艺抑制SiN去除速率并减少氧化物沟槽凹陷
US11180678B2 (en) 2018-10-31 2021-11-23 Versum Materials Us, Llc Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process
IL270237B2 (en) * 2018-10-31 2024-01-01 Versum Mat Us Llc Suppressing SiN Removal Rates And Reducing Oxide Trench Dishing For Shallow Trench Isolation (STI) Process
IL270237B1 (en) * 2018-10-31 2023-09-01 Versum Mat Us Llc Suppressing sin removal rates and reducing oxide deposition for the sti process
EP3647384A1 (fr) * 2018-10-31 2020-05-06 Versum Materials US, LLC Suppression des taux d'enlèvement de sin et réduction du creusage de tranchées à oxyde pour un procédé d'isolation de tranchée peu profonde (sti)
EP3686257A1 (fr) * 2019-01-25 2020-07-29 Versum Materials US, LLC Polissage par planarisation mécanique et chimique (cmp) d'isolation de tranchée peu profonde (sti) à faible concentration d'abrasif et combinaison d'additifs chimiques
US11326076B2 (en) 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
JP2022553105A (ja) * 2019-10-24 2022-12-21 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物
JP7557532B2 (ja) 2019-10-24 2024-09-27 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物
WO2021113285A1 (fr) * 2019-12-04 2021-06-10 Versum Materials Us, Llc Polissage de planarisation chimico-mécanique (cmp) d'isolation par tranchées peu profondes (sti) à vitesse élevée d'élimination de film d'oxyde
CN114929822A (zh) * 2019-12-04 2022-08-19 弗萨姆材料美国有限责任公司 高氧化物膜去除速率浅沟槽隔离(sti)化学机械平面化(cmp)抛光
US12091581B2 (en) 2019-12-04 2024-09-17 Versum Materials Us, Llc High oxide film removal rate shallow trench (STI) chemical mechanical planarization (CMP) polishing
CN116063928A (zh) * 2021-11-01 2023-05-05 凯斯科技股份有限公司 抛光浆料组合物
CN116063928B (zh) * 2021-11-01 2025-09-02 凯斯科技股份有限公司 抛光浆料组合物

Also Published As

Publication number Publication date
TW200600569A (en) 2006-01-01
KR20050122754A (ko) 2005-12-29
KR100637772B1 (ko) 2006-10-23
TWI329668B (en) 2010-09-01

Similar Documents

Publication Publication Date Title
WO2006001558A1 (fr) Composition d'une bouillie cmp a haute selectivite pour procede sti dans la fabrication d'un semi-conducteur
US8048809B2 (en) Polishing method using chemical mechanical slurry composition
US6616514B1 (en) High selectivity CMP slurry
US6540935B2 (en) Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
EP1106663B1 (fr) Pâte de polissage chimiomécanique pour polir le bioxyde de silicium
KR101718788B1 (ko) 화학 기계 연마 조성물 및 관련 방법
US8409990B2 (en) Chemical-mechanical polishing compositions and methods of making and using the same
US20020129560A1 (en) Acidic polishing slurry for the chemical-mechanical polishing of SiO2 isolation layers
US6964600B2 (en) High selectivity colloidal silica slurry
CN111944428B (zh) 化学机械抛光组合物以及优先于二氧化硅抛光氮化硅并同时抑制对二氧化硅的损伤的方法
US10844244B2 (en) Polishing additive composition, polishing slurry composition and method for polishing insulating film of semiconductor element
KR20200132756A (ko) 강화된 결함 억제를 나타내고 산성 환경에서 실리콘 이산화물 위의 실리콘 질화물을 선택적으로 연마하는 화학 기계적 연마 조성물 및 방법
US7708900B2 (en) Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
EP2092034B1 (fr) Compositions de boues de polissage mécano-chimique, procédés de préparation de ces compositions et procédés d'utilisation de ces compositions
US8512593B2 (en) Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100684877B1 (ko) 슬러리 조성물 및 이를 이용한 화학적 기계적 연마 공정을포함하는 반도체 소자 제조 방법
KR100466422B1 (ko) Ｃｍｐ용 조성물
US20020127954A1 (en) Process for the chemical-mechanical polishing of isolation layers produced using the STI technology, at elevated temperatures
KR100366304B1 (ko) 반도체 웨이퍼 절연층의 화학적 기계적 연마용 조성물
KR100445499B1 (ko) 반도체 디바이스의 산화막 연마용 ｃｍｐ 슬러리

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase