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WO2006000957A2 - Systeme d'attaque de diode laser - Google Patents

Systeme d'attaque de diode laser Download PDF

Info

Publication number
WO2006000957A2
WO2006000957A2 PCT/IB2005/051973 IB2005051973W WO2006000957A2 WO 2006000957 A2 WO2006000957 A2 WO 2006000957A2 IB 2005051973 W IB2005051973 W IB 2005051973W WO 2006000957 A2 WO2006000957 A2 WO 2006000957A2
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
laser diode
drive
circuit
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2005/051973
Other languages
English (en)
Other versions
WO2006000957A3 (fr
Inventor
Jacques E. M. Smeets
Jacques B. J. J. Geheniau
Robertus I. Van Steen
Guido Tent Llabres Enriquez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Devices Corp
Koninklijke Philips NV
Original Assignee
Arima Devices Corp
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Devices Corp, Koninklijke Philips Electronics NV filed Critical Arima Devices Corp
Publication of WO2006000957A2 publication Critical patent/WO2006000957A2/fr
Publication of WO2006000957A3 publication Critical patent/WO2006000957A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Definitions

  • the voltage bias circuit is operable to adjust the adjustable bias voltage in response to a supply voltage of the drive circuit. This may provide for an improved drive of a laser diode that is specifically suited for the specific supply voltage of the drive circuit. As the dynamic and static characteristics of the output voltage may depend strongly on the supply voltage, this allows optimisation of the voltage drive of the laser diode for the characteristics of the drive circuit.
  • the voltage bias circuit is operable to adjust the adjustable bias voltage in response to a writing power required for writing on the optical medium. This may provide for an improved drive of a laser diode that is specifically suited for the specific characteristics of the writing operation to be performed.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

L'invention concerne un système d'attaque (100) de diode laser pour une unité de stockage optique. Le système d'attaque (100) de diode laser comprend un circuit d'attaque (103) de diode laser lequel fournit une tension d'attaque sur une sortie, ainsi qu'une diode laser (101) destinée à écrire sur un support optique. De plus, le système d'attaque (100) de diode laser comprend un circuit de polarisation en tension (107) qui génère une tension de polarisation réglable. La diode laser (101) et le circuit de polarisation en tension (107) sont disposés en un couplage série couplé à la sortie du circuit d'attaque (103) de la diode laser. Pendant les opérations d'écriture, la tension d'attaque du circuit d'attaque (103) est décalée de la tension de polarisation réglable, fournissant ainsi une tension de diode laser pouvant être optimisée selon les caractéristiques du courant. L'invention permet une conformation améliorée des impulsions d'écriture et par conséquent un rendement d'écriture accru. De plus, l'invention offre davantage de souplesse pour commander différents types de diodes à partir du même circuit d'attaque.
PCT/IB2005/051973 2004-06-22 2005-06-15 Systeme d'attaque de diode laser Ceased WO2006000957A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04102864.8 2004-06-22
EP04102864 2004-06-22

Publications (2)

Publication Number Publication Date
WO2006000957A2 true WO2006000957A2 (fr) 2006-01-05
WO2006000957A3 WO2006000957A3 (fr) 2006-04-06

Family

ID=35589317

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/051973 Ceased WO2006000957A2 (fr) 2004-06-22 2005-06-15 Systeme d'attaque de diode laser

Country Status (1)

Country Link
WO (1) WO2006000957A2 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027179A (en) * 1975-08-28 1977-05-31 Rca Corporation High repetition rate injection laser modulator
JPS5994482A (ja) * 1982-11-19 1984-05-31 Fujitsu Ltd 半導体レ−ザ駆動回路
JPS61265886A (ja) * 1985-05-20 1986-11-25 Nec Corp 半導体レ−ザ及びその駆動方法
US7339963B2 (en) * 2002-11-27 2008-03-04 International Business Machines Corporation High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver

Also Published As

Publication number Publication date
WO2006000957A3 (fr) 2006-04-06

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