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WO2006075985A1 - Modulateurs d'intensite optique a deux longueurs d'onde utilisant des materiaux a absorptions saturables - Google Patents

Modulateurs d'intensite optique a deux longueurs d'onde utilisant des materiaux a absorptions saturables Download PDF

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Publication number
WO2006075985A1
WO2006075985A1 PCT/US2005/001222 US2005001222W WO2006075985A1 WO 2006075985 A1 WO2006075985 A1 WO 2006075985A1 US 2005001222 W US2005001222 W US 2005001222W WO 2006075985 A1 WO2006075985 A1 WO 2006075985A1
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WO
WIPO (PCT)
Prior art keywords
light beam
wavelength
control
control light
adjusting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/001222
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English (en)
Inventor
Chen-Chia Wang
Sudhir Trivedi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brimrose Corp of America
Original Assignee
Brimrose Corp of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brimrose Corp of America filed Critical Brimrose Corp of America
Priority to PCT/US2005/001222 priority Critical patent/WO2006075985A1/fr
Publication of WO2006075985A1 publication Critical patent/WO2006075985A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays

Definitions

  • TITLE Bi-Wavelength Optical Intensity Modulators using Materials with Saturable Absorptions
  • the invention described and claimed herein comprises a novel and significantly efficient, economic-wise, method and device for optically transferring the desired intensity patterns from a longer wavelength control light beam onto a short wavelength light beam that can be used, but not limited to, to expose the photoresist films on semiconductor wafers during the integrated- circuit manufacturing processes, leading to improved and finer resolutions in the resultant circuit patterns while eliminating the use of physical masks .
  • Lithography is a standard procedure for imprinting the desired circuit patterns onto semiconductor wafers that in the end can be fabricated into various kinds of integrated-circuit chips with versatile functions .
  • the state-of-the-art approach for lithography involves photolithography in which light beams of certain wavelength are used, in combination with physical masks, to expose photoresist layers that are deposited on the semiconductor wafers prior to the stated exposure by the exposure light beams .
  • the said physical masks bear the positive or negative images of the desired circuit patterns to be imprinted on the semiconductor wafers .
  • the photoresist layers are further developed and processed, mostly chemically, leading to patterns in the photoresist layer closely resembling the circuit patterns carried by the physical masks .
  • the resultant semiconductor wafer can then undergo further processing to the desired specifications through, for example but not limited to, doping of proper dopant species and dosage, as well as the' coating of metallic layers .
  • the state-of-the-art photolithographic approaches for semiconductor integrated-circuit manufacturing have the advantage of being applicable in mass-production environments, provided that correct and reliable physical masks are readily available .
  • This advantage stems from the fact that physical masks, assuming their availability, can be used to time-efficiently fabricate mass quantities of identical, standardized integrated circuits . This compares favorably to great extent with other state-of-the-art techniques like e-beam lithography which can provide much finer spatial resolution without requiring physical masks but at the challenging expense of lengthy exposure times .
  • Figure 1 shows a schematic of one embodiment of the invention .
  • Figure 2 shows the energy diagram of the ground and excited states in a typical DX-defect containing material (AlGaAs : Te in this case)
  • Figure 3 shows a schematic of a second embodiment of the invention .
  • Figure 1 which consists of two light beams , herein named as the control light beam and the exposure light beam. Further comprising of the embodiment are certain optics for conditioning and delivering the light beams as well as a bi-wavelength saturable absorber based on, but not limited to, certain classes of optical materials that can be grown and processed.
  • the control light beam shall have the wavelength that is relatively longer than that of the exposure light beam.
  • the wavelength range of the control light beam can be within the visible spectrum while the exposure light beam can have the wavelength that is within the deep ultraviolet (DUV) range .
  • DUV deep ultraviolet
  • the selection of particular wavelength values for the control and exposure light beams are dominated by the inter-play of the following factors : commercial availability, interactions with the bi-wavelength saturable absorbers, sensitivity to the photoresists, and the sizes of the spatial feature of the integrated-circuit chips to be fabricated.
  • the wavelengths of the control and exposure light beams must be within the spectrum in which the bi-wavelength saturable absorber is responsive to .
  • the wavelength of the exposure light beam must be quite short so as to meet the advancing and stringent requirements on fabricating integrated circuits with finer spatial features .
  • the selection of the control light beam wavelength while being more flexible, depends on the economic availability of light sources within the, for example but not limited to, visible spectrum, as well as the available power levels .
  • the control light beam should possess sufficiently high optical power levels and power densities so as to ensure successful operation of the bi-wavelength saturable absorber and high-fidelity circuit pattern transfers from the beam profile of the control light beam onto that of the exposure light beam.
  • the desired circuit patterns shall be imposed onto the cross-sectional beam profile of the control light beam. • This can be achieved by using, for example but not. limited to, light sources comprising of laser diode arrays or arrays of light-emitting diodes . Other means also include the deployment of external light sources in combination with, for example but not limited to, micro-electro-mechanical (MEM) mirror arrays, or liquid crystal displays found in modern flat-panel computer or TV displays/monitors . These image modulators are to have arrays of pixels with sufficiently small dimensions so as to facilitate the image transfers from the control light beam onto the exposure light beam.
  • MEM micro-electro-mechanical
  • Either the positive or the negative image of the desired circuit patterns shall be imposed onto the control light beam intensity profile, depending on the requirements of the integrated-circuit manufacturing processes .
  • the generation of the desired circuit patterns can be achieved by, for example but not limited to, using high speed computers capable of time-efficiently produce the desired circuit patterns and control the modulation circuitry used to impose those images onto the control light beam.
  • the exposure light beam is to be generated by a light source with the appropriately short wavelength. It is further conditioned and then delivered, with a preferably uniform intensity profile and sufficient power strength, onto the beam splitter shown in Figure 1 where it is combined with the image- carrying, longer wavelength control light beam with sufficient precision in matching the positions of their cross-sectional profiles .
  • the pair of light beams exiting from the beam splitter then propagate, co-linearly, into the bi-wavelength saturable absorber where they interact with the bi-wavelength saturable absorber .
  • the bi-wavelength saturable absorber shall transfer, at its exit plane, an exposure light beam whose cross-sectional intensity profile is identical to that of the longer wavelength control light beam prior to its entrance into the bi-wavelength saturable absorber .
  • the cross-sectional area of the bi-wavelength saturable absorber is to be greater than the laser beam spot size so as to accommodate the interacting laser beams completely.
  • Sufficient thickness of the bi-wavelength saturable absorber is to be required so as to achieve 100 percent contrast ratio in the exited exposure beam intensity profile, if required by the desired circuit patterns .
  • the bi-wavelength saturable absorber is based, for example but not limited to, on a class of optical materials that exhibit the so-called DX effects .
  • a class of optical materials that exhibit the so-called DX effects .
  • DX defects can be created in the grown materials .
  • these DX defects create lattice distortions which can be relaxed by the incident photons with sufficiently high energy.
  • the presence of DX defects thus generates two energy levels for electrons, i . e . , the ground state and the excited state (ionized donor state or meta-stable state) .
  • the ground state and the excited states are separated by an energy barrier characteristic of the interaction between the dopant and the host material .
  • electrons can be excited from the ground state onto the excited state if the photon has sufficiently high energy.
  • electrons residing in the excited state can acquire sufficient energy, for example, through thermal heating or electric field acceleration, they can overcome the energy barrier and return to the ground state and the DX material becomes refreshed and ready for the writing of new images .
  • the distribution of electrons between the ground and excited states can be thus easily manipulated via, for example, temperature control on the DX material or the applied bias electric field.
  • DX materials are discrete energy levels, there exist bands of energy levels that allow the absorption of photons within a wide range of spectrum, for example, from deep ultraviolet to visible . Because the total amount of DX absorption centers are limited by the introduced dopants, this characteristic broadband absorption allows the modulation of the absorption of short wavelength exposure light beam by the longer wavelength control light beam, which is exploited by the invention. As an example, the absorption of DUV exposure light beam by the bi-wavelength saturable absorber can be readily modulated by the introduction or elimination of the control light beam whose wavelength is located in the visible spectrum.
  • the bi-wavelength saturable absorber becomes transparent to DUV light beam.
  • the bi-wavelength saturable absorber can then absorb completely the DUV light beam, provided that sufficient interaction length is available .
  • This unique characteristic of the bi-wavelength saturable absorber is the foundation for their application to mask-less photolithography pursued by the invention. Note that the modulation on the absorption of long wavelength light beam by a shorter wavelength light beam is also feasible .
  • the operation principle of the invention can be further understood by considering the specific example in which the longer wavelength control light beam is visible while the short wavelength exposure light beam is DUV.
  • the desired circuit patterns are first imposed onto the visible control light beam by, for example but not limited to, liquid crystal based display devices .
  • the image-carrying visible control light beam is then combined with the un-modulated, uniform-intensity DUV exposure light beam using a beam splitter .
  • the control and exposure light beams then co- propagate through the bi-wavelength saturable absorber that has a sufficient thickness and doping density.
  • bi- wavelength saturable absorber If a bright spot in the exposure light beam is desired upon its exit from the bi- wavelength saturable absorber, it is necessary to make the bi- wavelength saturable absorber transparent to the DUV exposure light beam along its path. This can be achieved by correspondingly bleaching out all of the DX absorption centers or states along that particular path and hence the exposure light beam would not be attenuated at all, , resulting in a bright spot at the exit plane of the bi-wavelength saturable absorber . Such bleaching can be achieved by the presence of the visible control light beam with appropriate power density levels .
  • the bi-wavelength saturable absorber absorbs all of the short wavelength exposure light photons along that particular path of exposure light beam propagation. This can be achieved if the DX absorption centers or states are available along that particular path within the bi-wavelength saturable absorber which in turn can be achieved by turning off the visible control light beam along that very same path of propagation. As a result, the desired circuit patterns can be faithfully transferred from the long-wavelength visible control light beam directly onto the short-wavelength DUV exposure light beam, assuming the thickness and DX state density of the bi-wavelength saturable absorber is sufficient .
  • the required interaction length over which the control, exposure light beams , and the bi-wavelength saturable absorber interact depends on the beam characteristics of the exposure light beam, i . e . , its wavelength, pulse energy, duration, and beam diameter .
  • the required interaction length and the effective DX doping density then further determine the thickness of the bi-wavelength saturable absorber required .
  • Estimates on the required thickness, L eff , of the bi-wavelength saturable absorber have been calculated based on the following DUV beam characteristics that are typical in state-of-the-art semiconductor manufacturing processes : 193 ran wavelength, 10 ns pulse width, 10 mj pulse energy, and 1-cm DUV beam diameter .
  • Such energy can be supplied by, for example, raising the temperature of or applying a bias electric field to the bi- wavelength saturable absorber .
  • the recombination barriers can range from 0.1 eV to 0.7 eV with the corresponding refreshment times at room temperature stemming from a few seconds to sub-microseconds .
  • refreshment of the bi-wavelength saturable absorber can be achieved within sub-microsecond scale and thus affords the resultant mask-less scanner the exceptional capability of exposing photoresists at rates in excess of one hundred-fold greater than existing state-of-the-art technologies, provided exposure light sources with correspondingly high pulse repetition rates are available .
  • the throughput of the mask-less photolithographic technology of the invention can thus be correspondingly increased by a factor of 100 greater than existing state-of-the-art semiconductor manufacturing capabilities .
  • the bi-wavelength saturable absorbers based on indium (In) doped cadmium fluoride (CdF 2 ) exhibit response times shorter than 1 ⁇ s at room temperature (300 °K) .
  • the CdF 2 In the room temperature operation of the invention, one can use the CdF 2 : In based bi-wavelength saturable absorber to exploit the ultra-fast image refreshment rates whose upper limit is determined by the response time of the bi-wavelength saturable absorber.
  • the mask-less photolithographic technology of the invention can offer refreshment rates in excess of 100 kHz .
  • no electric field acceleration is required for refreshing the bi-wavelength saturable absorber when operated in this mode .
  • these light sources shall have stronger optical power densities because the excited DX states relax back towards the ground state at a much faster rate when operating at room temperature as compared to lower operating temperatures .
  • the bi-wavelength saturable absorber shall generate thermal heat due to the absorption of photons of the control light beam, the exposure light beam, or both.
  • waste heat must be removed efficiently to ensure stable operation characteristics of the bi-wavelength saturable absorbers .
  • the heat removal can be achieved by attaching the saturable absorber to heat sinks like, for example but not limited to, thermal electric coolers .
  • bi-wavelength saturable absorbers with small thickness can be mounted on substrate materials that are transparent to the light beams being used in the invention. They can also be sandwiched in between those transparent optical materials . Special arrangements in the orientation of the transparent optical substrates can be deployed to minimize optical birefringence effects .
  • Gray-scale operation for exposing the photoresists is also allowed by the invention. This is achieved by manipulating the optical intensity of the longer-wavelength control light beam to levels in between complete darkness and that corresponding to 100% bleach-out of the bi-wavelength saturable absorber .
  • intensity manipulation of the control light beam allows partial bleaching of the bi-wavelength saturable absorber and hence the short wavelength exposure light beam, upon its exit from the bi-wavelength saturable absorber, shall have intensity levels in between complete darkness and that of unperturbed, 100% transmission.
  • gray-scale operation is achieved by the invention .
  • FIG. 3 Another embodiment of the invention is shown in Figure 3.
  • the longer wavelength control light beam in this embodiment is to be imposed with the desired circuit patterns using the same means described in the previous embodiment shown in Figure 1. It is further deflected by the beam splitter before entering the bi- wavelength saturable absorber and counter-propagates with the short-wavelength exposure light beam.
  • This embodiment has the advantage that the longer wavelength control light beam is diverted away from the photoresist-coated semiconductor wafers and hence eliminates the complication of undesired exposure of the photoresists by the longer wavelength control light beam which deteriorates the resolution of the exposed circuit patterns .
  • This embodiment is made possible due to the fact that the depletion or bleach-out of the DX absorption centers/states can be achieved by the presence of longer wavelength control light beam with appropriate intensity levels .
  • the direction of propagation of the control light beam is irrelevant, as long as it is on the same path as that of the short wavelength exposure light beam.
  • a light source with a longer wavelength is to be used as the control light beam.
  • Another light beam, with a shorter wavelength than that of the control light beam, is to be used as the exposure light beam for exposing the photoresist layers on semiconductor wafers during the manufacturing of integrated-circuit chips .
  • a bi-wavelength saturable absorber which is to have sufficient thickness and appropriate dopant species and density, acts as the agent for transferring the images carried by the longer wavelength control light beam onto the shorter wavelength exposure light beam.
  • the desired circuit patterns are imposed onto the longer wavelength control light beam using, for example but not limited to, devices similar to liquid crystal displays .
  • the desired image patterns can be calculated and controlled by computers with sufficiently high computing power and communicating bandwidth for controlling the liquid crystal displays .
  • the image-carrying control light beam enters the bi- wavelength saturable absorber, either co-propagating or counter- propagating, with the shorter wavelength exposure light beam.
  • the bi-wavelength saturable absorber in the presence of appropriate dopants, is capable of transferring the images carried by the control light beam onto the exposure light beam, with either 100% fidelity or, if desired, gray-scale operations .
  • the image-carrying short wavelength exposure light beam can be further conditioned and proj ected onto the semiconductor wafers and expose the photoresists .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention porte sur un dispositif et sur un procédé permettant d'exposer des photorésines sur des plaquettes à semi-conducteurs sans utiliser de masques physiques et tout en améliorant considérablement les rendements de temps et coûts dans la fabrication de microcircuits intégrés. Deux sources électromagnétiques de différentes longueurs d'onde sont utilisées comme sources de lumière, l'une ayant un fonctionnement avec une longueur d'onde plus longue que le faisceau de lumière de contrôle, alors que l'autre d'une longueur d'onde plus courte de façon appropriée est utilisée pour exposer éventuellement les photorésines sur des plaquettes à semi-conducteurs. Selon ce procédé, on place d'abord des images de configurations de circuits désirées sur le plus court faisceau de lumière de contrôle de longueur d'onde utilisant, par exemple, mais pas exclusivement, des matrices de diodes laser, des matrices de diodes émettrices de lumière et des dispositifs similaires à des afficheurs à cristaux liquides. Le faisceau de lumière de contrôle supportant l'image a une interaction à l'intérieur de l'absorbeur saturable à deux longueurs d'onde avec le faisceau de lumière d'exposition de longueur d'onde courte qui supporte initialement un profil d'intensité uniforme. L'absorbeur saturable à deux longueurs d'onde transfère les images acheminées par le faisceau de lumière de contrôle vers le faisceau de lumière d'exposition lors de sa sortie de l'absorbeur saturable à deux longueurs d'onde. Le faisceau lumière d'exposition peut ensuite être utilisé pour exposer des photorésines sans utiliser de masques physiques. Cette invention permet d'éliminer les coûts initiaux extrêmement prohibitifs associés à la conception et à la production de grands masques physiques pourvus de fines caractéristiques spatiales recherchées, par les procédés de fabrication de circuits intégrés de la technique antérieure. L'invention, combinée à des sources de lumière appropriées, permet également d'améliorer les taux de rendement dans la fabrication de microcircuits intégrés par ordres d'amplitude, et d'accroître également les impacts économiques.
PCT/US2005/001222 2005-01-11 2005-01-11 Modulateurs d'intensite optique a deux longueurs d'onde utilisant des materiaux a absorptions saturables Ceased WO2006075985A1 (fr)

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PCT/US2005/001222 WO2006075985A1 (fr) 2005-01-11 2005-01-11 Modulateurs d'intensite optique a deux longueurs d'onde utilisant des materiaux a absorptions saturables

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PCT/US2005/001222 WO2006075985A1 (fr) 2005-01-11 2005-01-11 Modulateurs d'intensite optique a deux longueurs d'onde utilisant des materiaux a absorptions saturables

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104298079A (zh) * 2014-10-17 2015-01-21 京东方科技集团股份有限公司 一种曝光系统及曝光方法
GB2540654A (en) * 2015-05-13 2017-01-25 Zeiss Carl Smt Gmbh Method of variably attenuating a beam of projection light in an optical system of a microlithographic apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614990A (en) * 1994-08-31 1997-03-25 International Business Machines Corporation Illumination tailoring system using photochromic filter
US6262795B1 (en) * 1998-08-28 2001-07-17 Philip Semiconductors, Inc. Apparatus and method for the improvement of illumination uniformity in photolithographic systems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614990A (en) * 1994-08-31 1997-03-25 International Business Machines Corporation Illumination tailoring system using photochromic filter
US6262795B1 (en) * 1998-08-28 2001-07-17 Philip Semiconductors, Inc. Apparatus and method for the improvement of illumination uniformity in photolithographic systems

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104298079A (zh) * 2014-10-17 2015-01-21 京东方科技集团股份有限公司 一种曝光系统及曝光方法
GB2540654A (en) * 2015-05-13 2017-01-25 Zeiss Carl Smt Gmbh Method of variably attenuating a beam of projection light in an optical system of a microlithographic apparatus

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