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WO2006042356A1 - Dispositif detecteur dote d'un element capteur magnetostrictif et utilisation de ce dispositif detecteur - Google Patents

Dispositif detecteur dote d'un element capteur magnetostrictif et utilisation de ce dispositif detecteur Download PDF

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Publication number
WO2006042356A1
WO2006042356A1 PCT/AT2005/000420 AT2005000420W WO2006042356A1 WO 2006042356 A1 WO2006042356 A1 WO 2006042356A1 AT 2005000420 W AT2005000420 W AT 2005000420W WO 2006042356 A1 WO2006042356 A1 WO 2006042356A1
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WIPO (PCT)
Prior art keywords
sensor device
sensor element
magnetostrictive
sensor
holding elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/AT2005/000420
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German (de)
English (en)
Inventor
Evangelos Hristoforou
Hans Hauser
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Technische Universitaet Wien
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Technische Universitaet Wien
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Publication date
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Publication of WO2006042356A1 publication Critical patent/WO2006042356A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0885—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by magnetostrictive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
    • G01L1/125—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress by using magnetostrictive means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
    • G01L1/127—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress by using inductive means

Definitions

  • the invention relates to a sensor device with a long magnetostrictive sensor element, which is provided on the one hand with a field winding and on the other hand with a measuring winding, and which is held with its two ends of holding elements and mechanically set with the help of these holding elements under bias or set, and further advantageous uses of such a sensor device.
  • Sensor devices in particular in a small construction and in a micro-construction, are becoming increasingly important in various fields, such as in motor vehicle technology, but also in medical technology and in many other fields, cf. e.g. US Pat. No. 6,484,592 B, US Pat. No. 5,905,210 A, but also US Pat. No. 5,821,430 A, EP 1 048 932 A, RU 2 143 705 C or US Pat. No. 2004/0095137 A.
  • a sensor device of the initially cited type is also known from EP 793 102 A known;
  • This sensor device is intended for seismological measurements, with magnetic field changes, which are induced in a measuring coil as a result of the movements of a mass and of a resulting magnetostriction effect, serving as the basis for the measurements.
  • Magnetic effects and magnetic materials are thus of very general importance in the construction of such sensor devices, and they are used for the realization of sensors with high accuracy, for example for sensors for detecting positions, tensile or compressive loads, of electromagnetic fields and the like.
  • a problem with such sensor devices is the dependence on the environment, namely on ambient fields, on the ambient temperature, but also on the dependence on mechanical loads, when they are used for detecting field strengths or similar parameters. Accordingly, there is a need for an intel ⁇ ligenten sensor device which avoids such a mutual Be ⁇ impairment of physical measures by a distinction between different physical quantities is made possible.
  • a sensor device as defined in claim 1 is proposed.
  • Advantageous embodiments of this sensor device are specified in the subclaims, as well as particularly advantageous uses of such a sensor device.
  • the sensor element is a "linear" magnetostrictive (ferromagnetic) element, in particular in the form of an elongated cylinder or wire or a strip with a shape anisotropy, wherein the Consnerstre ⁇ ckung, the measure of length, is substantially greater than In particular, the ratio of length dimension to transverse dimension is at least 1000.
  • the magnetostrictive, elongated, linear sensor element is pretensioned and it is electrically connected with the aid of the holding elements Furthermore, the magnetostrictive sensor element is pre-magnetized eg by means of a permanent magnet, in particular a permanent magnet rod, or a coil Windings or coils are applied to the two ends of the linear sensor element.
  • a Wick ⁇ ment at one end, serves as a field winding for generating a magnetic field along the sensor element when it is traversed by an electric current, whereas the winding or coil at the other end of the sensor element as a test or sampling or measuring coil serves.
  • the magnetostrictive sensor element used is both mechanically biased and magnetized.
  • the sensor device can then be operated in three different operating modes, namely as a magnetostrictive delay line or line (MDL - magnetostrictive delay line), as a magneto-inductive element (MI element) and as a spontaneous flux reversal unit (RE magnetization unit) (REF - re-ent rant flux reversal).
  • a pulsed current is passed through the exciting coil.
  • This causes a pulsed magnetic field along the magnetostrictive sensor element which generates pulsed micro-deformations in the region of the sensor element within the excitation coil as a result of the magnetostriction effect.
  • pulse-shaped micro-deformations then propagate in the longitudinal direction of the thin cylindrical or band-shaped sensor element, comparable to longitudinal acoustic pulse signals.
  • the permanent magnet or coil orients the magnetic dipoles in the sensor element in a predetermined orientation, so that the generation and detection of the pulsed micro-deformation in a repeatable form is possible. In this way, a non-zero signal response is enabled. As a result of the magnetization effect of the permanent magnet, any possible contribution of ambient fields in the generation and detection of the "acoustic" pulses becomes negligible.
  • the magnetostrictive sensor element is set under pretension, which is to be understood as tensile, compressive or even torque application (ie the sensor element is twisted with the aid of the holding elements) biased, ie twisted), this leads either to a reduction in the pulse-shaped output voltage if the sensor element has a positive magnetostriction constant, or to an output signal increase if the sensor element has a negative magnetostriction constant.
  • the MI (magneto-inductive) operating mode is based on the transmission of a sinusoidal current with a correspondingly stabilized amplitude and frequency via the preferably electrically conductive holding elements, in particular copper substrates.
  • a sinusoidal current with a correspondingly stabilized amplitude and frequency via the preferably electrically conductive holding elements, in particular copper substrates.
  • GMI effect also called GMI effect, GMI - giant magneto-impedance
  • the use of low frequencies for example in the range of 10 to 100 kHz, in view of a more repeatable sensor mode is preferred in the present sensor device, but the utilization of the above-mentioned GMI effect should not be excluded, ie
  • the use of a high frequency is quite possible and expedient.
  • the transmitted sinusoidal signal results in the generation of a signal passing around the sensor element, ie around the axis of the propagation of the sine signal " ⁇ O • -
  • Magnetic field Due to the so-called skin effect and the generated eddy current, this magnetic field can only influence the surface of the magnetostrictive sensor element. Since the sensor element is mechanically biased and biased, it is apparent that the magnetic dipoles of the sensor element are polarized relative to the amplitude and direction of the magnetic field. Therefore, there follows a continuous change in the surface magnetization of the magnetostrictive sensor element due to a shift of the domain walls (at low operating frequencies) or according to a rotation of the magnetization vector within the domains (at high operating frequencies).
  • Such a change in the surface magnetization corresponds to a flux change along the magnetostrictive sensor element and is therefore detected via the measuring winding as a pulsed output voltage with a low frequency or as a pseudo-sinusoidal signal at high frequencies.
  • the additional application of a tensile stress or a torque on the torque sensor element results in a parallel or recht ⁇ angular alignment of the dipoles, as in the case of MDL mode.
  • Such additional dipole alignment results in a decrease or increase in the induced output voltage.
  • An additional magnetic field along the sensor element enhances the dipole alignment and reduces the induced output voltage.
  • the dependence on mechanical loads and fields is monotonic even in the MI mode, as will be explained in more detail below.
  • the temperature may exert a similar influence in both modes, in the MDL and MI modes, but in the present sensor device, due to the substantially "linear" design of the sensor element, preferably as an amorphous ribbon or as an amorphous wire, with appropriate heat treatment, the temperature effect negligible, ie effects of temperature fluctuations are within given error limits.
  • the REF operating mode in particular the application of the bias voltage to the ferromagnetic sensor element (in the sense of a Sixtus - and - Tonk experiment), this bias leads to alignment of the magnetic dipoles in one direction.
  • the use of an amorphous wire or strip as a sensor element proves to be advantageous here, with a single magnetic domain being present along the sensor element axis, in particular after a heat treatment in the magnetic field and after axial prestressing.
  • a sinusoidal current is passed through the exciter coil, the resulting sinusoidal field along the axis of the sensor element and at the end of the sensor element results in domain wall nucleation and propagation.
  • the domain propagates along the sensor element and the orientation changes, the flux density changes along the sensor element and in particular also in the region within the measuring coil. Therefore, this change can be detected as a pulse-shaped output voltage at the measuring coil, in accordance with the induced magnetization change as a result of the change in the domain orientation.
  • the dependence of the measurement result of bias voltage and field is significant in this REF operating mode per se at low voltage amplitudes and field strengths, but the present sensor device will be biased according to the magnetization of the sensor element (above a threshold value) and the application of a mechanical bias voltage Insensitive to mechanical stresses and ambient fields.
  • the sensitivity to temperature changes remains as the temperature affects the domain structure.
  • a temperature increase results in a splitting of the aforementioned single domain into multiple parallel / antiparallel domains, which in turn results in a monotonic decrease in the REF output voltage as the temperature of the environment increases.
  • the holding elements provide an electrical connection for the magnetostrictive sensor element, wherein the holding elements Preferably even form the connecting parts, such as if they are made of copper, and it is also advantageous if the holding elements are formed by substrates, which at the same time form the electrical An ⁇ closing parts.
  • At least one of the retaining elements is adapted to apply the mechanical prestressing in the sense of a force in the axial direction of the sensor element or else in the sense of a Verdre ⁇ Hung of the sensor element, either by a fixed, biasing effecting storage or a movable mounting of the retaining element itself or in an associated base part, or by incorporation of a corresponding bewegli ⁇ Chen part within the rest of the holding element.
  • a permanent magnet is provided, which is preferably formed by a rod which extends parallel to the linear magnetostrictive sensor element between the holding elements.
  • Advantageous results have been obtained in practice when the permanent magnet is a Nd-Fe-B magnet.
  • a current coil may also be provided, e.g. is arranged around the sensor element.
  • the elongated, "linear" magnetostrictive sensor element is preferably formed thin-cylindrical or band-shaped, and in particular the ratio of its longitudinal dimension to its transverse dimension (diameter or width) as mentioned is at least 1000.
  • the sensor element consists of an amorphous material according to a particularly preferred embodiment , in particular from a heat-treated material which is favorable with regard to the magnetic effect, is of particular advantage if the magnetostrictive sensor element is formed from a Fe 7B Se 7 Bi 5 material.
  • the two windings or coils may consist of an enameled copper wire, wherein the copper wire, for example, has a diameter of about 0.1 mm. With regard to a high sensitivity of the sensor device, it is also advantageous if the measuring winding has a larger coil length than the excitation winding; It is also favorable here if the measuring winding has a higher number of turns than the exciter winding.
  • a pulse-shaped current is applied to the exciter coil.
  • a sinusoidal current is transmitted through the sensor element; and in the case of the REF mode, a sinusoidal current is supplied to the exciting coil.
  • a combination sensor device is obtained by the invention, which allows the detection of mechanical loads, magnetic fields and temperatures based on three different magnetic effects or operating modes in the same design.
  • the magnetic effects are, as mentioned, magnetostriction, magneto-impedance and spontaneous flux reversal. If the sensor device is operated separately and sequentially in these three different operating modes, a signal corresponding to the three different physical variables mentioned, namely mechanical load, field strength and temperature, can be obtained. In tests, it has also been found that, within one range, the total output signal of the sensor device in each of the three different operating modes is equal to the product of the three corresponding functions for the physical quantities; therefore, the three parameters or quantities (mechanical load, temperature and magnetic field) can be determined based on the solution of a 3 x 3 matrix equation.
  • FIG. 2 shows a diagram which shows the dependence of the output voltage or measuring voltage on an applied mechanical voltage
  • Fig. 3 is a graph showing the dependence of the output voltage on a magnetic field strength in the MDL mode
  • Fig. 4 is a graph showing the dependence of the output voltage on a magnetic field in the MI mode
  • Fig. 5 is a graph illustrating the dependence of the output voltage on a magnetic field in the REF mode.
  • Fig. 6 is a graph showing the dependence of the output voltage of the temperature 2 in the REF mode.
  • FIG. 1 schematically illustrates a sensor device 1 which, as an essential element, is a magnetostrictive, i. ferromagnetic sensor element 2 has.
  • This sensor element is long and thin, thus a "linear" sensor element 2, wherein the longitudinal dimension is preferably at least 100 times greater than the transverse dimension of the sensor element 2.
  • the sensor element may be cylindrical (with a round or elliptical cross-section) or band-shaped, and it preferably consists of an amorphous, heat-treated, ferromagnetic alloy.
  • an amorphous wire of Fe7 8 Si 7 B 15 was used material which has a more or less negligible temperature coefficient up to a Tempera ⁇ ture of 350 0 C for the sensor element. 2
  • the diameter of this wire was 125 ⁇ m, and the length of the wire was 5 cm.
  • the sensor element 2 is held in position by two holding elements 3, 4, these preferably being holding elements 3, 4 made of copper, in particular copper substrates.
  • the electrical and mechanical connection of the sensor element 2, so the wire, with the two copper Garelemten 3, 4 can - as in the practical embodiment - be accomplished by laser welding.
  • Both coils 5.6 can, for example, with a copper wire, such as an enameled copper wire with a Diameter of about 0.1 mm, to be produced.
  • the exciter coil 5 had 30 turns, and its coil length was about 0.4 mm.
  • a rod-shaped permanent magnet 7 to provide a bias of the magnetostrictive sensor element 2.
  • This permanent magnet 7 may for example consist of Nd-Fe-B magnetic material.
  • the field strength of the permanent magnet rod 7 at the surface was 20 kA / m.
  • a current-carrying coil 7 ' can also be used for the biasing, as is schematically indicated in FIG. 1 by dashed lines.
  • the coil 7 ' is preferably arranged around the sensor element 2, to be precise outside the exciter coil 5 and the measuring coil 6.
  • the coil 7' could of course also be arranged next to the sensor element 2, similar to the permanent magnet 7 is arranged in the vicinity of the sensor element 2.
  • the holding elements 3, 4 serving as electrical connection parts are connected to an electric current source 8, in order to supply a sinusoidal current to the sensor element 2 in particular.
  • the amplitude and the frequency of this sinusoidal current can be used with conventional lent funds are set and stabilized, which is not illustrated in detail in the drawing.
  • the excitation coil 5 a sinusoidal current can be supplied, and for this purpose, the excitation coil 5 is connected to a corresponding power generator circuit 9 ange ⁇ .
  • test coil 6 is further connected to a corresponding measuring circuit 10, e.g. with signal shaping, Signalver ⁇ processing and display, as conventional, connected.
  • a corresponding measuring circuit 10 e.g. with signal shaping, Signalver ⁇ processing and display, as conventional, connected.
  • FIG. 1 also shows a base 11 for the holding elements 3, 4, wherein it is also illustrated diagrammatically at 12 that with the aid of a part of this base 11 one of the holding elements, e.g. 4, slidably and / or rotatably angeord ⁇ net, so as to apply the desired mechanical bias, namely an axial tensile stress and / or a torsional stress on the sensor element 2.
  • the desired mechanical bias namely an axial tensile stress and / or a torsional stress on the sensor element 2.
  • conventional means 13 are indicated per se in order to apply a mechanical load to be measured (tension or pressure).
  • a mechanical load to be measured tension or pressure
  • a bending stress see force F in FIG. 1
  • the sensor device 1 was operated in the MDL mode, wherein the dependence of the output signal V (in mV) on the applied mechanical load ⁇ (force) in N or determined by the applied field strength H (in A / m) was, cf. 2 and 3. More specifically, according to FIG. 2, the dependence of the output signal V on the mechanical load ⁇ has been determined in the case of statio nary conditions with regard to field strength and temperature. The dependence of the output signal V on the mechanical load ⁇ has an exponential profile and can be written on as follows:
  • V ( ⁇ ) V 0 -e- " iCr . (1)
  • O L is a material-dependent coefficient greater than 0.
  • V (H) V 0 -He ' " 2 ". (2)
  • OC 2 is a coefficient greater than 0, and V 0 is again the maximum voltage signal in MDL mode.
  • the signal voltage V due to the magnetic field H can be given by the following relationship:
  • V ⁇ H) V ' 0 -e ⁇ " iH (3)
  • V 0 is the new maximum of the output voltage V at the now given dependence on the field strength H in the MDL mode.
  • V ⁇ , H) ke- ⁇ a * H + a> ⁇ ) .
  • V ( ⁇ ) k- ⁇ + b. (5)
  • the output signal depends on the field strength H in the manner of a Gaussian function (see Fig. 4), and the following relationship can be written about:
  • V (H) k'-e ⁇ (ß ⁇ ] • (6)
  • ⁇ 2 is again a positive coefficient.
  • V (H) k'-e ⁇ ⁇ ßH) • (7)
  • V ⁇ , H) ⁇ k- ⁇ + b) -k'-e- ( ⁇ H) . (8th)
  • the load dependency can be assumed to be constant with an error of 1-2%.
  • the field dependence is illustrated in FIG. If a corresponding biasing of the sensor element 2 is pre-exposed, as can be seen from the curves in FIG. 5, the output signal V can be assumed to be almost constant.
  • Equation (9) can be used independently to determine the ambient temperature, whereas equations (4) and (8) are used in combination for the numerical determination of the magnitude of mechanical load and field strength in MDL mode or MI mode can.
  • load ⁇ , temperature T and field strength H can be found by solving a 3 x 3 matrix equation, since the sensor output voltage V in a range of Product of the three functions for the above physical quantities ⁇ , T, H corresponds.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

L'invention concerne un dispositif détecteur (1) pour fonctionnement MDL, MI et REF, ce dispositif comprenant un élément capteur magnétostrictif allongé (2), doté d'une part d'un enroulement inducteur (5) et d'autre part d'un enroulement de mesure (6). Les deux extrémités du dispositif sont maintenues par des éléments de retenue (3, 4) qui peuvent appliquer ou appliquent une précontrainte mécanique sur ledit dispositif. L'élément capteur magnétostrictif (2) est pré-aimanté et les éléments de retenue (3, 4) comportent un raccord électrique pour l'élément capteur magnétostrictif (2).
PCT/AT2005/000420 2004-10-21 2005-10-21 Dispositif detecteur dote d'un element capteur magnetostrictif et utilisation de ce dispositif detecteur Ceased WO2006042356A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATA1772/2004 2004-10-21
AT17722004A AT501015B1 (de) 2004-10-21 2004-10-21 Sensoreinrichtung mit einem magnetostriktiven sensorelement sowie verwendung dieser sensoreinrichtung

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
GR20160100075A (el) * 2016-03-01 2017-11-22 Ευαγγελος Βασιλειου Χριστοφορου Συστημα και μεθοδος επιτηρησης της κατανομης των τασεων σε σιδηρομαγνητικους χαλυβες εντος της ελαστικης περιοχης και της περιοχης πλαστικης παραμορφωσης
CN113834952A (zh) * 2021-09-23 2021-12-24 中国人民解放军国防科技大学 基于非晶丝gsi效应实现物体加速度测量的装置及方法

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US2511178A (en) * 1944-02-26 1950-06-13 Fairchild Camera Instr Co Magnetostrictive stress-responsive device and system embodying the same
EP0321791A2 (fr) * 1987-12-22 1989-06-28 AlliedSignal Inc. Jauge extensométrique à domaine magnétique
WO2003016891A2 (fr) * 2001-08-09 2003-02-27 Infm Istituto Nazionale Per La Fisica Della Materia Capteur et procede permettant la mesure de micro-deformations statiques et dynamiques

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US2511178A (en) * 1944-02-26 1950-06-13 Fairchild Camera Instr Co Magnetostrictive stress-responsive device and system embodying the same
EP0321791A2 (fr) * 1987-12-22 1989-06-28 AlliedSignal Inc. Jauge extensométrique à domaine magnétique
WO2003016891A2 (fr) * 2001-08-09 2003-02-27 Infm Istituto Nazionale Per La Fisica Della Materia Capteur et procede permettant la mesure de micro-deformations statiques et dynamiques

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GR20160100075A (el) * 2016-03-01 2017-11-22 Ευαγγελος Βασιλειου Χριστοφορου Συστημα και μεθοδος επιτηρησης της κατανομης των τασεων σε σιδηρομαγνητικους χαλυβες εντος της ελαστικης περιοχης και της περιοχης πλαστικης παραμορφωσης
CN113834952A (zh) * 2021-09-23 2021-12-24 中国人民解放军国防科技大学 基于非晶丝gsi效应实现物体加速度测量的装置及方法
CN113834952B (zh) * 2021-09-23 2024-04-12 中国人民解放军国防科技大学 基于非晶丝gsi效应实现物体加速度测量的装置及方法

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AT501015B1 (de) 2007-08-15

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