[go: up one dir, main page]

WO2005124951A8 - Dfb laser with lateral bragg gratings and facet bragg reflectors etches in one step - Google Patents

Dfb laser with lateral bragg gratings and facet bragg reflectors etches in one step

Info

Publication number
WO2005124951A8
WO2005124951A8 PCT/GB2005/002395 GB2005002395W WO2005124951A8 WO 2005124951 A8 WO2005124951 A8 WO 2005124951A8 GB 2005002395 W GB2005002395 W GB 2005002395W WO 2005124951 A8 WO2005124951 A8 WO 2005124951A8
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide
bragg
facet
radiation
along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2005/002395
Other languages
French (fr)
Other versions
WO2005124951A1 (en
Inventor
Richard Hogg
Kristian Groom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sheffield
Original Assignee
University of Sheffield
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sheffield filed Critical University of Sheffield
Publication of WO2005124951A1 publication Critical patent/WO2005124951A1/en
Publication of WO2005124951A8 publication Critical patent/WO2005124951A8/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H01S5/2045—Strongly index guided structures employing free standing waveguides or air gap confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A distributed feedback laser comprises: a waveguide (17) extending along a longitudinal axis; a Bragg grating structure (21) arranged with respect to the waveguide to interact with electromagnetic radiation propagating along the waveguide so as to provide distributed feedback along the waveguide to enhance a mode of said radiation; and first facet means arranged at a first end of the waveguide to reflect propagating electromagnetic radiation back along the waveguide. The first facet means comprises a first Bragg reflector structure (3). In certain embodiments the first Bragg reflector structure and the Bragg grating structure are substantially different. For example, the Bragg grating may comprise transverse elements for lateral coupling with guided radiation, and the reflector may comprise a periodic structure of semiconductor material (41) and air gaps in the radiation path. The laser may have a second Bragg reflector structure (5) at the opposite end of the waveguide. Fabrication methods are described.
PCT/GB2005/002395 2004-06-18 2005-06-17 Dfb laser with lateral bragg gratings and facet bragg reflectors etches in one step Ceased WO2005124951A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0413664.4 2004-06-18
GB0413664A GB2416427A (en) 2004-06-18 2004-06-18 DFB laser

Publications (2)

Publication Number Publication Date
WO2005124951A1 WO2005124951A1 (en) 2005-12-29
WO2005124951A8 true WO2005124951A8 (en) 2006-04-27

Family

ID=32750162

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2005/002395 Ceased WO2005124951A1 (en) 2004-06-18 2005-06-17 Dfb laser with lateral bragg gratings and facet bragg reflectors etches in one step

Country Status (2)

Country Link
GB (1) GB2416427A (en)
WO (1) WO2005124951A1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243019A (en) 2006-03-10 2007-09-20 Fujitsu Ltd Optical semiconductor device
US8238388B2 (en) * 2006-09-20 2012-08-07 The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin Tunable laser device and a method for producing light of respective selectable wavelengths
JP4817255B2 (en) * 2006-12-14 2011-11-16 富士通株式会社 Optical semiconductor device and manufacturing method thereof
DE102014106209B3 (en) * 2014-05-05 2015-08-27 Nanoplus Nanosystems And Technologies Gmbh Interband cascade laser and method for producing an inter-band cascade laser comprising a feedback element
JP6379696B2 (en) * 2014-06-05 2018-08-29 住友電気工業株式会社 Quantum cascade laser diode
JP6464895B2 (en) * 2015-04-03 2019-02-06 住友電気工業株式会社 Quantum cascade laser diode
JP6597037B2 (en) * 2015-08-06 2019-10-30 住友電気工業株式会社 Quantum cascade laser device
JP6485340B2 (en) * 2015-12-09 2019-03-20 住友電気工業株式会社 Method for fabricating quantum cascade laser, quantum cascade laser
CN106602404A (en) * 2016-12-30 2017-04-26 中国工程物理研究院应用电子学研究所 Semiconductor laser and manufacturing method thereof
JP2020521972A (en) 2017-05-26 2020-07-27 カリフォルニア インスティチュート オブ テクノロジー Spectral filter with controllable spectral bandwidth and resolution
IT201700087052A1 (en) * 2017-07-28 2019-01-28 Prima Electro S P A PROCEDURE FOR MANUFACTURING A LASER SEMICONDUCTOR DIODE, AND LASER DIODE
CN108173116B (en) * 2018-02-07 2020-01-03 山东大学 Broadband tunable Moire grating laser and working method thereof
EP3921612A4 (en) 2019-02-06 2022-11-02 California Institute of Technology COMPACT HYPERSPECTRAL MID-IRRED SPECTROMETER
CN111755949B (en) * 2019-03-29 2021-12-07 潍坊华光光电子有限公司 Preparation method of ridge GaAs-based laser with asymmetric injection window
WO2021068059A1 (en) * 2019-10-08 2021-04-15 Electrophotonic-Ic Inc. Semiconductor laser device structures and methods of fabrication thereof
WO2021092579A1 (en) 2019-11-08 2021-05-14 California Institute Of Technology Infrared spectrometer having dielectric-polymer-based spectral filter
EP3879642B1 (en) * 2020-03-13 2025-09-24 Advanced Photonics Applications GmbH Single mode semiconductor laser with phase control
WO2022259349A1 (en) * 2021-06-08 2022-12-15 日本電信電話株式会社 Semiconductor laser
JP7662035B2 (en) * 2021-06-24 2025-04-15 日本電信電話株式会社 Semiconductor laser
CN113866879B (en) * 2021-10-18 2024-04-30 联合微电子中心有限责任公司 Bragg grating-based reflector, manufacturing method thereof and photoelectric device
CN116387974B (en) * 2023-06-05 2023-12-29 福建慧芯激光科技有限公司 Preparation method of edge-emitting laser based on butt-joint growth process
CN117913650B (en) * 2023-12-14 2025-09-26 长春理工大学 A semiconductor laser with dual-wavelength output and its preparation method
CN118249202B (en) * 2024-03-26 2024-12-06 睿创光子(无锡)技术有限公司 Inter-band cascade laser and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362390A (en) * 1986-09-03 1988-03-18 Nec Corp Distributed feedback semiconductor laser
JPH0353575A (en) * 1989-07-21 1991-03-07 Canon Inc Wavelength stabilized semiconductor laser

Also Published As

Publication number Publication date
GB0413664D0 (en) 2004-07-21
GB2416427A (en) 2006-01-25
WO2005124951A1 (en) 2005-12-29

Similar Documents

Publication Publication Date Title
WO2005124951A8 (en) Dfb laser with lateral bragg gratings and facet bragg reflectors etches in one step
DE60007959D1 (en) Quantum cascaded laser with distributed feedback for single-mode continuous wave operation
US8295320B2 (en) Achieving low phase noise in external cavity laser implemented using planar lightwave circuit technology
EP0978911A3 (en) Optical functional devices, their manufacturing method and optical communication system
WO2001040835A3 (en) Large diameter optical waveguide, grating, and laser
WO2009054526A1 (en) Mode-locked laser
EP1737090A4 (en) Tunable laser
WO2004054049A3 (en) Nanocrystal waveguide (now) laser
WO2008035321A3 (en) Multisection ld having a ridge with voids for longitudinal mode control
WO2002044770A1 (en) Method and device for manufacturing optical fiber grating, optical fiber grating, optical module, and optical communication system
ITTO20020274A0 (en) SEMICONDUCTOR THZ LASER INCORPORATING CONTROLLED PLASMON CONFINED WAVEGUIDE.
WO2004066458A3 (en) Fiber laser
AU7550000A (en) An optical waveguide and a method for providing an optical waveguide
TW200611470A (en) Gain-assisted electroabsorption modulators
WO2002063728A8 (en) Raman fiber laser
US6999658B2 (en) Optical resonator and laser applications
EP1742098A4 (en) Optical resonator, optical modulator, optical frequency comb generator, optical oscillator, and optical resonator manufacturing method
US7602831B2 (en) Semiconductor laser device having an insulation region
AU2002214551A1 (en) Optical serial link
WO2004008591A3 (en) Dfb laser with a distributed reflector and photonic band gap
JP4377848B2 (en) Spot size converter
US7957618B2 (en) Integrated photonic circuit
Chen et al. Improvement of single-mode gain margin in gain-coupled DFB lasers
CN100524980C (en) High smsr unidirectional etched lasers and low back-reflection photonic device
AU2002212408A1 (en) Wavelength tunable laser source

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
CFP Corrected version of a pamphlet front page

Free format text: UNDER (54) PUBLISHED TITLE REPLACED BY CORRECT TITLE

NENP Non-entry into the national phase in:

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase