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WO2005116761A2 - Couches de protection bloquant les rayonnements uv compatibles avec des pates epaisses - Google Patents

Couches de protection bloquant les rayonnements uv compatibles avec des pates epaisses Download PDF

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Publication number
WO2005116761A2
WO2005116761A2 PCT/US2005/018971 US2005018971W WO2005116761A2 WO 2005116761 A2 WO2005116761 A2 WO 2005116761A2 US 2005018971 W US2005018971 W US 2005018971W WO 2005116761 A2 WO2005116761 A2 WO 2005116761A2
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Prior art keywords
acrylate
methacrylate
lower alkyl
groups
thick film
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WO2005116761A3 (fr
Inventor
Young H. Kim
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EIDP Inc
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EI Du Pont de Nemours and Co
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Publication of WO2005116761A2 publication Critical patent/WO2005116761A2/fr
Publication of WO2005116761A3 publication Critical patent/WO2005116761A3/fr
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Definitions

  • the present invention relates to a composition and a process that involves the use of a protective layer in the fabrication of electronic devices from thick film pastes.
  • the present invention relates to a composition and a process for constructing electronic devices wherein a substrate is coated with a conducting layer that is in turn coated with a thick film paste.
  • the thick film paste may contain materials such as glass frits, conductors, photo-image able polymers, and, usually, a solvent.
  • photo- imageable protective layers may be used to isolate photo-imageable thick film deposits from other elements of these electronic devices such as conductive layers.
  • the protective layer can be patterned to accommodate the inclusion of the thick film paste material at the position desired.
  • the use of unfiltered mercury lamps in the patterning process can expose the protective layer to UV-B radiation. UV-B radiation exposure can cause portions of the protective layer to become insoluble, which may leave an undesirable residue after development .
  • Fukuda (US 5,601,638) describes a thick film paste for use in the formation of circuit components.
  • Ezaki (US 5,362,927) reports a thick film hybrid circuit board device formed by lamination.
  • Kazunori (JP 2001/155,626) provides a method for producing a display substrate.
  • Takehiro and Shigeo (JP 10-340,666) describe a field emission element.
  • Kazunori and, Shinsuke JP 2001/111,217) provide a method of forming laminated wiring.
  • the present invention adds one or more UV-B blocking agents to a photoresist material from which a photo-imageable protective layer of an electronic device is made to reduce the formation of residue.
  • One embodiment of the present invention is a composition
  • a composition comprising (a) a photoresist material, and (b) a UV-B blocking agent selected from the group consisting of aromatic phenolic compounds and carboxylic compounds that are described by the general formula:
  • n represent radicals of 1 or 2 carbon atoms or up to four additional conjugated benzene rings, and the aromatic and alkyl derivatives thereof, and X and Y may be either both hydroxy groups, both carboxyl groups, or one hydroxy and one carboxyl group.
  • the photoresist material includes a polymer in which at least 50 mole percent of the monomers in the polymer comprise a structure selected from one or more members of the groups consisting of:
  • R ⁇ _ is hydrogen or lower alkyl
  • R 2 is a lower alkyl
  • R3 is hydrogen or a lower alkyl
  • a lower alkyl includes alkyl groups having 1 to 6 linear or cyclic carbon atoms
  • R ⁇ _ is hydrogen or lower alkyl
  • R2 is a lower alkyl
  • R 3 and R4 are independently hydrogen or a lower alkyl
  • a lower alkyl includes alkyl groups having 1 to 6 carbon atoms, and the joining of R ⁇ _ and R2 , or R ⁇ and either R 3 or R , or R 2 and either
  • R 3 or R4 to form a 5-, 6- or 7-membered ring
  • R ⁇ _ is hydrogen or lower alkyl
  • R2 is a lower alkyl
  • R 3 and R 4 are independently hydrogen or a lower alkyl
  • a lower alkyl includes alkyl groups having 1 to 6 carbon atoms, and the joining of R]_ and R2 , or R]_ and either R 3 or R4 , or R 2 and either
  • the phototresist material may also include 1 to 20 wt% of photoactive compounds.
  • one or both of the hydroxy and carboxyl groups of the UV-B blocking agent are derivatized with an ortho-nitro benzyl group, or with a t-butyl carboxyl grou .
  • Another embodiment of the present invention is a process to fabricate an electronic device in which a composition as described above is deposited on a substrate.
  • Figure 1 shows self-alignment of a UV-B blocking protective layer.
  • the present invention provides a composition that can be used to make a photo-imageable protective layer in the fabrication of electronic devices.
  • Protective layers are often patterned with an unfiltered light source, which could emit some amount of high energy UV-B radiation.
  • Unfiltered light sources typically emit 365-465 nm radiation, and UV radiation of this frequency range is known as UV-A.
  • high-pressure mercury lamps emit particularly strong radiation at 356, 406 and 465 nm.
  • UV-B is higher energy radiation in the range of 280 to 320 nm, and unfiltered high-pressure mercury lamps may emit small amounts of this radiation. UV-B radiation can cause undesired photochemical reactions in a protective layer, resulting in formation of an insoluble residue.
  • the composition from which such protective layer is formed may contain about 0.001 to about 10 wt% of UV-B absorbing agents in the formulation.
  • the UV-B blocking agent can be admixed with essentially any photoresist material to form the composition from which the protective layer if formed. Frequently, novolac- type materials are used as a photoresist material .
  • Preferred UV-B blocking agents for use in this invention should meet several criteria.
  • the blocking agents must absorb UV-B radiation, and it should be readily removed with the developing medium used for the photoresist material. It should also have sufficient thermal and photochemical stability to withstand the fabrication process. Excessive heat could make some compounds decompose or sublime from the protective layer.
  • Suitable UV blocking agents include aromatic compounds containing phenolic groups and/or carboxylic groups, with a general formula as follows
  • n represent radicals of 1 or 2 carbon atoms or up to four additional conjugated benzene rings, and the aromatic and alkyl derivatives thereof, and X and Y may be either both hydroxy groups, both carboxyl groups, or one hydroxy group and one carboxyl group.
  • the alkyl derivatives may include, for example, C ⁇ ⁇ C 10 straight chain, branched or cyclic radicals, and the aromatic derivatives may include, for example, C 6 ⁇ C ⁇ 2 phenolic radicals with optional alkyl substituents.
  • the carboxyl or hydroxy groups can be protected with either photo-labile groups or acid- labile groups to improve development contrast.
  • these groups can be derivatized with an ortho- nitro benzyl group, which can be deprotected with UV-A radiation.
  • these groups can be protected with a t-butyl carboxyl group, which can be cleaved off by an acid catalyzed reaction with acid generated during the photolysis step for the photoresist.
  • the UV-B agent with these protecting groups is insoluble in the base developer, the loss from the non-exposed area during the development would be minimized.
  • UV blocking agent has to be selected to have good compatibility with the polymer in the photoresist material of the protective layer, good solubility in the processing solvent, as well as high blocking efficiency.
  • the amount of UV blocking agent in the composition with the photoresist material may range between about 0.0001 to about 20 percent by weight of the total mixture . A more preferred range is about 0.01 to about 2 wt%.
  • the amount of the blocking agent required for the application depends on the types of UV light, the thickness of the protective layer and the absorption characteristics of the agent. Some of the agent could be sublimed during the heat treatment, and may undergo photolytic or thermal decomposition, so that the efficacy of UV blocking could be process dependent . Too much blocking agent will make the photoresist less sensitive, and may require a large amount of photo energy for photo development . The amount of photo blocking agent can be modulated to obtain a desirable balance between photo definition and photo blocking.
  • the amount of UV blocking agent can be adjusted depending on the degree of UV blocking required.
  • the amount of additional radiation required to generate a residue-free pattern with the addition of a corresponding amount of a UV blocking agent is a good indication how effectively the blocking agent blocks light.
  • the absolute value can change depending on the thickness of film and radiation source.
  • the efficacy of the UV blocking agent depends on the absorptivity and energy dissipation mechanism as well as the presence of impurities.
  • a self-aligned environment in device fabrication is one in which one or more layers of the device blocks radiation with the result that such a layer functions as a built-in photomask.
  • the advantage of such a fabrication method is that the subsequent photo-patterning of other layers does not need to be conducted with a carefully aligned external photomask. This enables shortening the fabrication time and the use of simpler equipment.
  • the photo-imageable protective layer can be used to enhance the contrast in a photo- imageable thick film between the region that is directly irradiated and the region that is shielded by the protective layer, there is a potential problem related to the compatibility of the thick film paste with the protective layer.
  • This problem may be addressed by fabricating the protective layer from positive photo-imageable materials that do not degrade or dissolve upon contact with the high boiling ester- type or ether-type solvents found in the thick film pastes, which solvents typically include butyl carbitol, butyl carbitol acetate, dibutyl carbitol, dibutyl phthalate, texanol and terpineol .
  • the compatibility problem may be resolved by using, in the photoresist material of the protective layer, polymers with pendant acid labile groups. Upon either chemical treatment or photo-irradiation, such polymers become insoluble to ester-type organic solvents used with thick film pastes.
  • a film of such polymers used as the protective layer is, however, highly transparent to high-pressure mercury lamp ultra violet radiation, which is typically used in photo fabrication.
  • the mercury lamp radiation includes high intensity light at 365 nm (I-line) or 436 nm (g-line) radiation, or broad band unfiltered light including g-line and I-line radiation.
  • the UV radiation in this wavelength range is frequently called UV-A. Self-alignment is most commonly achieved through back radiation.
  • Figure 1 depicts self- alignment with an UV blocking protective layer.
  • the substrate (1) is a transparent support material, such as glass or polymer film.
  • the protective layer (2) is coated on the top of the substrate material and then photo imaged to provide a pattern.
  • a photosensitive thick film paste material (3) is applied on top of the photo-imaged protective layer.
  • UV radiation (5) is applied from the backside of the thick film paste, so that the photo irradiated area is hardened (4) .
  • UV-B light in the radiation can cause residue-forming side reactions either by photochemically initiated oxidation reactions or by photochemical cyclization reactions. These side reactions can be reduced by the addition of UV-B blocking agents to the composition from which the protective layer is prepared.
  • Novalac-type phenolic/formaldehyde polymeric materials are often used as the photoresist material in a protective layer in a process for the fabrication of an electronic device that contains a photo-imageable thick film paste such as Fodel ® silver paste.
  • the role of such a protective layer is to maintain spacing between the thick film deposit and other substrate structures to prevent contamination of the bottom substrate with the thick film paste. As mentioned above, in some cases, contamination of the bottom substrate may lead to short circuits.
  • the protective layer is then removed by dissolution along with the unimaged thick film material .
  • a drawback of these protective layers is that they are frequently damaged during the process of applying the paste materials on the top of the protective layer.
  • the cause of the damage is either the dissolution of the protective layer by solvent vapors generated during the paste drying process, or plastic deformation of the resist material due to plastization by these vapors.
  • Butyl carbitol, butyl carbitol acetate, dibutyl carbitol, dibutyl phthalate, texanol and terpineol are examples of the solvents currently used in thick film paste formulation.
  • a photoresist material that shows either lower solubility or improved compatibility toward high boiling ester-type or ether-type solvent vapors so as to reduce the damage to the protective layer.
  • a polymer to be used as the photoresist material from which a protective layer in electronic device is fabricated must be soluble in an organic solvent so that the polymer can be applied as a thin film on the top of prefabricated device layers. Upon either chemical treatment or photo-irradiation, the polymer becomes impervious to ester-type or ether-type organic solvents used in the formulation of the thick film paste. Since the polymer must undergo a photo- imaging step to be used as the protective layer, it must also be formulated with a photo-responsive agent.
  • a preferred polymer for this function contains a labile pendant group on a side acid functional group, which can be removed from the polymer pendant group at an appropriate time .
  • One type of pendant acid labile group useful in the compositions of this invention may be described by the formulae:
  • Some examples of representative acid labile monomeric components which may be used to prepare a polymeric photoresist material, include without limitation: 1-ethoxyethyl methacrylate (or acrylate) , 1-butoxyethyl methacrylate (or acrylate) , 1-ethoxy-l-propyl methacrylate (or acrylate) , tetrahydropyranyl methacrylate (or acrylate) , tetrahydropyranyl p-vinylbenzoate, 1-ethoxy-l-propyl p-vinylbenzoate, 4- (2- tetrahydropyranyloxy) benzyl methacrylate (or acrylate), and 4- (1-butoxyethoxy) benzyl methacrylate (or acrylate) .
  • R ⁇ _ is hydrogen or lower alkyl
  • R2 is lower alkyl
  • R 3 is hydrogen or lower alkyl
  • a lower alkyl includes alkyl groups having 1 to 6 linear or cyclic carbon atoms
  • acid labile monomeric components which may be used to prepare a polymeric photoresist material, include without limitation: : t-butyl methacrylate (or acrylate) , neopentyl methacrylate (or acrylate) , l-bicyclo ⁇ 2,2,2 ⁇ octyl methacrylate (or acrylate) and their derivatives, l-bicyclo ⁇ 2,2, ijheptyl methacrylate (or acrylate) and their derivatives, l-bicyclo ⁇ 2 , 1, l ⁇ hexyl methacrylate (or acrylate) and their derivatives, l-bicyclo ⁇ l, 1, l ⁇ pentyl methacrylate (or acrylate) and their derivatives, and 1-adamantyl methacrylate (or acrylate) and their derivatives.
  • the preferred molecular weight of the polymer in a photoresist material is 7,000-1,000,000. It is also desirable to use copolymers, either random or block copolymers, of monomer units containing acid labile side groups as well as other monomers that do not have acid labile pendant groups but have hydrophilic groups such as ethylene glycol ethers or carboxylic acid groups. Molecular weights higher than conventional photoresist materials are preferred since the polymer film deposited as the protective layer has to withstand various mechanical processes, such as screen printing. Mechanical stress is applied to the film with a rubber squeeze during or after the screen printing. In order to improve organic solvent resistance, it would be desirable to have a high amount of acid after the removal of the labile groups.
  • the amount of monomer in the copolymer suitable for imperviousness to the organic vapor depends on the types of organic solvent used with the paste .
  • the preferred mole fraction for the monomer containing a labile ester group is at least about 50 mol%, and the more preferred mole percentage is at least about 60 mol%.
  • the present invention is thus particularly useful when the photoresist material in the composition is prepared from polymers in which at least 50 mole percent of the monomers in the polymer include a structure selected from one or more members of the groups consisting of : (a)
  • R ⁇ _ is hydrogen or lower alkyl
  • R 2 is a lower alkyl
  • R 3 is hydrogen or a lower alkyl
  • a lower alkyl includes alkyl groups having 1 to 6 linear or cyclic carbon atoms
  • R ⁇ _ is hydrogen or lower alkyl
  • R 2 is a lower alkyl
  • R 3 and R 4 are independently hydrogen or a lower alkyl
  • a lower alkyl includes alkyl groups having 1 to 6 carbon atoms, and the joining of R ⁇ _ and R2 , or R]_ and either R 3 or R4 , or R2 and either
  • R 3 or R4 to form a 5-, 6- or 7-membered ring
  • R ⁇ _ is hydrogen or lower alkyl
  • R 2 is a lower alkyl
  • R 3 and R4 are independently hydrogen or a lower alkyl
  • a lower alkyl includes alkyl groups having 1 to 6 carbon atoms, and the joining of Ri_ and R2, or Ri and either R 3 or R4, or R2 and either R3 or R4 to form a 5-, 6- or 7-membered ring.
  • Suitable polymers on which to base a photoresist material may include those prepared from monomers in the group consisting of 1-ethoxyethyl methacrylate, 1-ethoxyethyl acrylate, 1-butoxyethyl methacrylate, 1-butoxyethyl acrylate, 1-ethoxy-l-propyl methacrylate, 1-ethoxy-l-propyl acrylate, tetrahydropyranyl methacrylate, tetrahydropyranyl acrylate, tetrahydropyranyl p-vinylbenzoate, 1-ethoxy- l-propyl p-vinylbenzoate, 4- (2-tetrahydropyranyloxy) benzyl methacrylate, 4- (2-tetrahydropyranyloxy) benzyl acrylate, 4- (1-butoxyethoxy) benzyl methacrylate, , 4- (1-butoxyethoxy) benzyl acrylate t-
  • Block copolymers can be prepared by methods known in the art, using methods typically known as living or controlled polymerization, like anionic or group transfer polymerization as well as atom transfer • polymerization.
  • Techniques regarding living, controlled and atom transfer polymerization suitable for use herein include those described in “Controlled/Living Radical Polymerization", edited by K. Matyjaszewski, Oxford University Press.
  • Random copolymers can be obtained by solution polymerization using typical free radical initiators, such as organic peroxide and azo initiators.
  • Methods for random copolymer polymerization suitable for use herein include those described in "Polymer Chemistry” , Fifth Edition by C.E. Carraher, Jr., Marcel Dekker Inc., New York, New York. (Chapters 7, 8 and 9) ; or "Polymers” by S.L. Rosen in The Kirk-Othmer Encyclopedia of Chemical Technology, Fourth Edition, John Wiley and Sons Inc., New York (Volume 19, pages 899-901).
  • a photo-initiator when used is selected from conventional photo acid generators such as aromatic sulfonium phosphofluoride, antimony fluoride, or aromatic iodonium salt with similar anions.
  • Suitable photo acid generators for use herein include those described in a paper by J.V. Crivello, "The Chemistry of Photoacid Generating Compounds" in Polymeric Materials Science and Engineering, Vol. 61, American Chemical Society Meeting, Miami FL, Sept. 11-15, 1989, pages 62-66 and references therein.
  • the selected photo acid generator should not undergo decomposition or dissolution during the development stage.
  • nonionic photoacid generators include PI-105 (Midori Kagaku Co, Tokyo, Japan) , a high molecular weight photo acid generator such as Cyracure UVI 6976 (Dow Chemical, Midland MI) , or CD-1012 (Aldrich Chemical, Milwaukee WI) .
  • Suitable UV-B blocking agents include compounds that absorb UV light in the range of 250 to 320 nm. These agents should have low solubility in aqueous base developing solutions while they are mixed with a photoresist material to form the composition from which the protective layer if formed.
  • the UV-B blocking agent should become readily soluble in the developing solution as photochemically induced deprotection of the acid labile ester group of the matrix polymer in the photoresist material renders the matrix polymer soluble in the developing solvent .
  • Such compounds are exemplified by aromatic compounds containing phenolic groups and/or carboxylic groups.
  • the UV blocking agent is selected to have compatibility with all these additives, and should be soluble in the solvent. In addition, it should not decompose or be washed out during the radiation and development stages.
  • the preferred UV blocking agents are 2,3 dihydroxy and 1-5- dihydroxy naphthalene, and their o-nitro benzyl or t-butyl carbonate derivatives.
  • the present invention further provides a process of fabricating an electronic device by depositing a composition of this invention on a substrate.
  • the substrate may be a component in an electronic device structure along with a positive photo-imageable protective layer, which is prepared from a composition of a photoresist material and a UV-B blocking agent, and layer of thick film paste.
  • a positive photo-imageable protective layer which is prepared from a composition of a photoresist material and a UV-B blocking agent, and layer of thick film paste.
  • the substrate may be an electronic device itself.
  • a 0.5 to 40 micron thick coating of a composition of a polymeric photoresist material with pendant labile acid groups, photo-active reagents and one or more UV blocking agents is applied to a substrate as a protective layer.
  • Such coating could be achieved by spin coating or table coating using a blade in an appropriate organic solvent.
  • the preferred organic solvents for applying the coating are propylene glycol 1-monomethyl ether 2 -acetate (PGMEA) or cyclohexanone .
  • PMEA propylene glycol 1-monomethyl ether 2 -acetate
  • the solvent is removed by heating the substrate to between about 70 to 100°C for typically about 1 to 3 minutes on a hot plate.
  • the coating is then ready to be patterned by UV photo-irradiation through a mask.
  • UV irradiation followed by heat treatment will cleave acid labile pendant groups to convert the ester to the acid.
  • the UV photo irradiation source may be a mercury lamp.
  • a small amount (10-10000 ppm) of photosensitizer which will increase the absorption of UV light.
  • suitable photosensitizers include isopropylthioxanthone (ITX) , 2, 4-Diethyl-9H- thioxanthen-9-one (DETX) and benzophenone .
  • the UV irradiation dose is 50 to 3000 mJ/cm 2 .
  • Post exposure baking conditions are typically about 120 to 140°C for about 1 to 3 minutes.
  • This treatment causes the exposed area to be soluble in an aqueous base developing solvent .
  • the basic developing solvents may include a carbonate solution or a low concentration sodium or potassium hydroxide solution.
  • a commercial aqueous base developer such as AZ 300, 400 or 500, obtained from Clariant Corporation (AZ Electronic Materials, Somerville NJ) , can be used.
  • the protective layer serves as a patterned template. The remaining portions of the protective layer are still soluble in organic solvents, however, and the protective function thereof toward the thick film paste is thus limited.
  • the layer can be converted to a high polycarboxylic acid content, which is insoluble in the common organic solvents employed in thick film pastes, by exposure to UV light and subsequent heat treatment .
  • the UV irradiation dose is typically about 50 to 4000 mJ/cm 2 .
  • Post exposure baking conditions are typically about 120 to 140 °C for 1 to 3 minutes .
  • a suitable thick film paste for use in an electronic device, as made by the process described above, is a paste that is negatively-imageable and may be developed with an aqueous base.
  • a representative example is Fodel ® silver paste.
  • the pastes may also contain carbon nanotubes for field emission display applications. Thick film paste is applied on the top of the converted protective layer by such methods as screen printing, which fills the vacancies in the patterned template generated by photo development.
  • the thick film paste is photo irradiated from the back side of the structure.
  • the paste located in the patterned template where the protective layer is removed by photo-imaging would be imaged preferentially.
  • these thick film pastes are developed by gentle spray of an aqueous base solution.
  • the unimaged paste is washed out within a length of time that is referred to as the time-to-clear (TTC) .
  • TTC time-to-clear
  • the spray will last about 1.5 to about 3.0 times the TTC.
  • the irradiated protective layer is soluble in the aqueous base solution, it is removed while the unimaged thick film paste is being removed as it is spray developed.
  • Example 1 The following components are mixed with 5.97 g of PGMEA to give a clear solution: 3.270 grams of poly (ethoxytriethylene glycol methacrylate-jb-t-butyl methacrylate) having a degree of polymerization (D.P.) of 37/100, and a number average molecular weight (Mn) of 10,000, 0.70 grams Cyracure ® UVI-6976 photo acid generator solution (Dow Chemical, Midland MI) , 0.17 grams of a 1% Quanticure ITX solution photosensitizer in PGMEA (Aldrich) , 0.68 g of a 1% 2,3-diazabicyclo [3.2.2]non-2- ene, 1,4, -trimethyl-,2,3-dioxide (TAOBN) solution in PG
  • the solution is cast on an indium tin oxide-coated glass plate and allowed to air dry for 10 minutes..
  • the film is then dried for 2 min at 70 °C on a hot plate.
  • the film is exposed to a 2000 mJ/cm 2 broad band UV light using a 20 micron photomask, and then heat treated on a hot plate at 120°C for 2 minutes.
  • the imaged part is developed by spraying with a 0.5% sodium carbonate solution containing 3% surfactant. A clean image is observed.
  • the plate is rinsed with deionized water, and dried on a 90 °C hot plate, then flood exposed with a 200 mJ/cm 2 light.
  • the plate is then baked at 120 °C for 2 minutes, and then developed with the same developer. Complete removal of the polymer is observed.
  • Example 3 2-naphthol is used instead of 1, 5-dihydroxy naphthalene in the same manner as described in Example 2. Some residue is observed in the pattern.

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Abstract

L'invention concerne des compositions contenant une photorésine et un agent anti-UVB. Ces compositions sont utilisées dans la fabrication de dispositifs électroniques, en particulier ceux formés à partir de pâtes épaisses. La présente invention concerne également un procédé de fabrication de dispositifs électroniques à l'aide desdites compositions. Une couche de polymère protectrice est fabriquée à partir de matériaux insolubles après irradiation dans les solvants de type ester contenus dans une pâte épaisse. La sélection appropriée des polymères du film protecteur permet d'utiliser le film protecteur pour tirer sur film un motif à l'aide d'une source de rayonnement d'une lampe de mercure non filtrée.
PCT/US2005/018971 2004-05-27 2005-05-27 Couches de protection bloquant les rayonnements uv compatibles avec des pates epaisses Ceased WO2005116761A2 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374859B2 (en) 2002-11-15 2008-05-20 E.I. Du Pont De Nemours And Company Protective layers compatible with thick film pastes
US7402373B2 (en) 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238842B1 (en) * 1998-03-12 2001-05-29 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4036986B2 (ja) * 1998-10-15 2008-01-23 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374859B2 (en) 2002-11-15 2008-05-20 E.I. Du Pont De Nemours And Company Protective layers compatible with thick film pastes
US7402373B2 (en) 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
US7608383B2 (en) 2004-02-05 2009-10-27 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes

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