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WO2005103333A3 - Wafer heater assembly - Google Patents

Wafer heater assembly Download PDF

Info

Publication number
WO2005103333A3
WO2005103333A3 PCT/US2005/002766 US2005002766W WO2005103333A3 WO 2005103333 A3 WO2005103333 A3 WO 2005103333A3 US 2005002766 W US2005002766 W US 2005002766W WO 2005103333 A3 WO2005103333 A3 WO 2005103333A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
permits
heating unit
film
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/002766
Other languages
French (fr)
Other versions
WO2005103333A2 (en
Inventor
David L O'meara
Gerrit J Leusink
Stephen H Cabral
Anthony Dip
Cory Wajda
Raymond Joe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007506149A priority Critical patent/JP2007537582A/en
Publication of WO2005103333A2 publication Critical patent/WO2005103333A2/en
Publication of WO2005103333A3 publication Critical patent/WO2005103333A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or `braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.
PCT/US2005/002766 2004-03-31 2005-02-01 Wafer heater assembly Ceased WO2005103333A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007506149A JP2007537582A (en) 2004-03-31 2005-02-01 Wafer heater assembly

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/813,119 US20050217799A1 (en) 2004-03-31 2004-03-31 Wafer heater assembly
US10/813,119 2004-03-31

Publications (2)

Publication Number Publication Date
WO2005103333A2 WO2005103333A2 (en) 2005-11-03
WO2005103333A3 true WO2005103333A3 (en) 2006-09-14

Family

ID=35052985

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/002766 Ceased WO2005103333A2 (en) 2004-03-31 2005-02-01 Wafer heater assembly

Country Status (6)

Country Link
US (1) US20050217799A1 (en)
JP (1) JP2007537582A (en)
KR (1) KR20070008569A (en)
CN (1) CN101023197A (en)
TW (1) TWI305656B (en)
WO (1) WO2005103333A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100862588B1 (en) * 2006-12-26 2008-10-10 주식회사 테라세미콘 Heating device of reaction chamber

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201041455A (en) * 2002-12-16 2010-11-16 Japan Science & Tech Agency Plasma generation device, plasma control method, and substrate manufacturing method
GB0410743D0 (en) * 2004-05-14 2004-06-16 Vivactiss Bvba Holder for wafers
JP4723871B2 (en) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ Dry etching equipment
JP2006222214A (en) * 2005-02-09 2006-08-24 Dainippon Screen Mfg Co Ltd Heat treatment apparatus
US7265066B2 (en) * 2005-03-29 2007-09-04 Tokyo Electron, Ltd. Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation
US7300891B2 (en) * 2005-03-29 2007-11-27 Tokyo Electron, Ltd. Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
US7452793B2 (en) * 2005-03-30 2008-11-18 Tokyo Electron Limited Wafer curvature estimation, monitoring, and compensation
US7789962B2 (en) * 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
JP4453021B2 (en) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
JP2007012734A (en) * 2005-06-29 2007-01-18 Matsushita Electric Ind Co Ltd Plasma etching apparatus and plasma etching method
US8454749B2 (en) * 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
JP2007201128A (en) * 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd Wafer holder for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP4407685B2 (en) * 2006-10-11 2010-02-03 セイコーエプソン株式会社 Semiconductor device manufacturing method and electronic device manufacturing method
US7671412B2 (en) * 2007-02-15 2010-03-02 Tokyo Electron Limited Method and device for controlling temperature of a substrate using an internal temperature control device
KR101061398B1 (en) * 2007-08-03 2011-09-02 테오스 가부시키가이샤 Silicon support device and silicon heating quenching device using the same
KR20090079540A (en) * 2008-01-18 2009-07-22 주식회사 코미코 Substrate support device and substrate processing apparatus having same
US8993939B2 (en) 2008-01-18 2015-03-31 Momentive Performance Materials Inc. Resistance heater
US20090308315A1 (en) * 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
US20100014097A1 (en) * 2008-07-17 2010-01-21 Nikon Corporation Algorithm correcting for correction of interferometer fluctuation
US20100247804A1 (en) * 2009-03-24 2010-09-30 Applied Materials, Inc. Biasable cooling pedestal
US20120006263A1 (en) * 2009-08-06 2012-01-12 Sumitomo Electric Industries, Ltd. Film deposition apparatus
JP5570938B2 (en) * 2009-12-11 2014-08-13 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
US20120085747A1 (en) * 2010-10-07 2012-04-12 Benson Chao Heater assembly and wafer processing apparatus using the same
KR20120105827A (en) * 2011-03-16 2012-09-26 삼성전자주식회사 Heater for fixing apparatus and fixing apparatus and image forming apparatus having the same
EP2829155B1 (en) * 2012-03-20 2022-09-07 Momentive Performance Materials Quartz, Inc. Resistance heater
DE102012005916B3 (en) * 2012-03-26 2013-06-27 Heraeus Noblelight Gmbh Device for irradiating a substrate
US9089007B2 (en) 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
CN102851652A (en) * 2012-09-28 2013-01-02 深圳市捷佳伟创新能源装备股份有限公司 Heater for MOCVD (metal-organic chemical vapor deposition) equipment
JP6165452B2 (en) * 2013-02-01 2017-07-19 株式会社日立ハイテクノロジーズ Plasma processing equipment
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
CN104731156B (en) * 2013-12-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of monitoring method of heating lamp
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US10006717B2 (en) 2014-03-07 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive baking system and method of using the same
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
CN107408505B (en) * 2015-02-25 2021-03-09 株式会社国际电气 Substrate processing apparatus, heater, and method for manufacturing semiconductor device
JP6630146B2 (en) * 2015-02-25 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and heating unit
CN109616434B (en) * 2015-02-25 2025-03-11 株式会社国际电气 Substrate processing device and method, semiconductor device manufacturing method and heating unit
JP6522481B2 (en) * 2015-10-05 2019-05-29 クアーズテック株式会社 Planar heater
US10161041B2 (en) 2015-10-14 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal chemical vapor deposition system and operating method thereof
JP6730861B2 (en) * 2016-06-22 2020-07-29 日本特殊陶業株式会社 Holding device
JP6736386B2 (en) * 2016-07-01 2020-08-05 東京エレクトロン株式会社 Substrate liquid processing apparatus, substrate liquid processing method and recording medium
CN109863585A (en) * 2016-10-17 2019-06-07 Asml荷兰有限公司 Processing apparatus and method for correcting parameter variations across a substrate
US11164737B2 (en) * 2017-08-30 2021-11-02 Applied Materials, Inc. Integrated epitaxy and preclean system
CN108682635B (en) * 2018-05-03 2021-08-06 拓荆科技股份有限公司 Wafer seat with heating mechanism and reaction chamber including the wafer seat
JP2020004526A (en) * 2018-06-26 2020-01-09 クアーズテック株式会社 Carbon wire heater
WO2020027993A1 (en) * 2018-08-03 2020-02-06 Applied Materials, Inc. Multizone lamp control and individual lamp control in a lamphead
KR102098867B1 (en) * 2018-09-12 2020-04-09 (주)아이테드 Imprinting apparatus and imprinting method
KR20220000408A (en) * 2019-05-24 2022-01-03 어플라이드 머티어리얼스, 인코포레이티드 substrate processing chamber
TWI727907B (en) * 2019-11-06 2021-05-11 錼創顯示科技股份有限公司 Heating apparatus and chemical vapor deposition system
US11542604B2 (en) 2019-11-06 2023-01-03 PlayNitride Display Co., Ltd. Heating apparatus and chemical vapor deposition system
TWI711717B (en) * 2019-11-06 2020-12-01 錼創顯示科技股份有限公司 Heating apparatus and chemical vapor deposition system
JP7248608B2 (en) * 2020-02-04 2023-03-29 日本碍子株式会社 electrostatic chuck heater
JP7326187B2 (en) * 2020-02-28 2023-08-15 クアーズテック株式会社 Plane heater
CN111725114B (en) * 2020-06-30 2023-07-14 北京北方华创微电子装备有限公司 Position correction device for heating lamp
US11605544B2 (en) 2020-09-18 2023-03-14 Applied Materials, Inc. Methods and systems for cleaning high aspect ratio structures
CN114496692B (en) * 2020-11-11 2024-03-12 中微半导体设备(上海)股份有限公司 Heating assembly, substrate bearing assembly and plasma processing device thereof
CN113201728B (en) * 2021-04-28 2023-10-31 錼创显示科技股份有限公司 Semiconductor wafer bearing structure and metal organic chemical vapor deposition device
CN115424913B (en) * 2021-06-01 2025-05-09 中微半导体设备(上海)股份有限公司 A plasma processing device and a retractable sealing part thereof
JP7666804B2 (en) * 2021-06-23 2025-04-22 住友電工デバイス・イノベーション株式会社 Semiconductor device manufacturing method
KR20230009759A (en) 2021-07-09 2023-01-17 삼성전자주식회사 Device and method for drying substrate
JP7719662B2 (en) * 2021-08-18 2025-08-06 株式会社Ｓｃｒｅｅｎホールディングス Substrate Processing Equipment
CN114845426B (en) * 2022-06-08 2025-05-27 上海埃延半导体有限公司 A carbon material heater
KR102836505B1 (en) * 2022-06-23 2025-07-22 주식회사 히타치하이테크 Plasma treatment device
CN115442927B (en) * 2022-11-04 2023-03-10 上海星原驰半导体有限公司 Composite temperature control disc
US12424482B2 (en) * 2022-12-12 2025-09-23 Applied Materials, Inc. Selective implantation into STI of ETSOI device
CN119859794A (en) * 2023-10-20 2025-04-22 应用材料公司 Preheating ring comprising carbon heater, heating system and processing chamber

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6106628A (en) * 1996-09-27 2000-08-22 Japan Process Engineering Ltd. Heater unit for chemical vapor deposition systems
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
WO2002045135A2 (en) * 2000-12-01 2002-06-06 Steag Hamatech Ag Method for thermally treating substrates
US20020162835A1 (en) * 1998-12-01 2002-11-07 Toshiba Ceramics Co., Ltd Heater
US6530994B1 (en) * 1997-08-15 2003-03-11 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US6688375B1 (en) * 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2927857B2 (en) * 1990-01-19 1999-07-28 株式会社東芝 Substrate heating device
US5223113A (en) * 1990-07-20 1993-06-29 Tokyo Electron Limited Apparatus for forming reduced pressure and for processing object
JP3288200B2 (en) * 1995-06-09 2002-06-04 東京エレクトロン株式会社 Vacuum processing equipment
TW452826B (en) * 1997-07-31 2001-09-01 Toshiba Ceramics Co Carbon heater
JP2002270346A (en) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd Heating device and its manufacturing method, as well as film forming device
KR100547189B1 (en) * 2003-04-23 2006-01-31 스타전자(주) Manufacturing method of carbon heating device using graphite felt

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6106628A (en) * 1996-09-27 2000-08-22 Japan Process Engineering Ltd. Heater unit for chemical vapor deposition systems
US6530994B1 (en) * 1997-08-15 2003-03-11 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US6688375B1 (en) * 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
US20020162835A1 (en) * 1998-12-01 2002-11-07 Toshiba Ceramics Co., Ltd Heater
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
WO2002045135A2 (en) * 2000-12-01 2002-06-06 Steag Hamatech Ag Method for thermally treating substrates
US6919538B2 (en) * 2000-12-01 2005-07-19 Steag Hamatech Ag Method for thermally treating substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100862588B1 (en) * 2006-12-26 2008-10-10 주식회사 테라세미콘 Heating device of reaction chamber

Also Published As

Publication number Publication date
TW200540937A (en) 2005-12-16
KR20070008569A (en) 2007-01-17
WO2005103333A2 (en) 2005-11-03
TWI305656B (en) 2009-01-21
JP2007537582A (en) 2007-12-20
CN101023197A (en) 2007-08-22
US20050217799A1 (en) 2005-10-06

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