[go: up one dir, main page]

WO2005101100A3 - Procede et appareil de traitement in-situ d'un empilement de films - Google Patents

Procede et appareil de traitement in-situ d'un empilement de films Download PDF

Info

Publication number
WO2005101100A3
WO2005101100A3 PCT/US2005/011319 US2005011319W WO2005101100A3 WO 2005101100 A3 WO2005101100 A3 WO 2005101100A3 US 2005011319 W US2005011319 W US 2005011319W WO 2005101100 A3 WO2005101100 A3 WO 2005101100A3
Authority
WO
WIPO (PCT)
Prior art keywords
film stack
etching
processing chamber
stack processing
situ film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/011319
Other languages
English (en)
Other versions
WO2005101100A2 (fr
Inventor
Walter R Merry
Quanyuan Shang
John M White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2007507401A priority Critical patent/JP2007533139A/ja
Publication of WO2005101100A2 publication Critical patent/WO2005101100A2/fr
Publication of WO2005101100A3 publication Critical patent/WO2005101100A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

L'invention concerne des modes de réalisation d'un outil en grappe, d'une chambre de traitement et d'un procédé de traitement d'un empilement de films. Dans un mode de réalisation, un procédé de gravure in-situ de couches de silicium et de métal d'un empilement de films comporte les étapes suivantes : gravure d'une couche de métal supérieure de l'empilement de films dans une chambre de traitement pour exposer une partie d'une couche de silicium sous-jacente, et la gravure d'une tranchée dans la couche de silicium sans retirer le substrat de la chambre de traitement. L'invention est notamment utile pour la production d'un transistor en minces couches destiné à des écrans plats.
PCT/US2005/011319 2004-04-08 2005-04-01 Procede et appareil de traitement in-situ d'un empilement de films Ceased WO2005101100A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007507401A JP2007533139A (ja) 2004-04-08 2005-04-01 インサイチュ膜スタック処理のための方法及び装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/821,723 2004-04-08
US10/821,723 US7358192B2 (en) 2004-04-08 2004-04-08 Method and apparatus for in-situ film stack processing

Publications (2)

Publication Number Publication Date
WO2005101100A2 WO2005101100A2 (fr) 2005-10-27
WO2005101100A3 true WO2005101100A3 (fr) 2006-08-24

Family

ID=35059359

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/011319 Ceased WO2005101100A2 (fr) 2004-04-08 2005-04-01 Procede et appareil de traitement in-situ d'un empilement de films

Country Status (6)

Country Link
US (1) US7358192B2 (fr)
JP (1) JP2007533139A (fr)
KR (1) KR20070007915A (fr)
CN (1) CN1943003A (fr)
TW (1) TWI298901B (fr)
WO (1) WO2005101100A2 (fr)

Families Citing this family (162)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060062914A1 (en) * 2004-09-21 2006-03-23 Diwakar Garg Apparatus and process for surface treatment of substrate using an activated reactive gas
KR100558922B1 (ko) * 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
JP4936709B2 (ja) * 2005-11-25 2012-05-23 東京エレクトロン株式会社 プラズマエッチング方法および半導体装置の製造方法
US8057633B2 (en) * 2006-03-28 2011-11-15 Tokyo Electron Limited Post-etch treatment system for removing residue on a substrate
KR100770792B1 (ko) * 2006-07-31 2007-10-26 세메스 주식회사 에칭부와 세정부를 겸비한 건식 에쳐
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 셔터
KR100856550B1 (ko) 2007-04-10 2008-09-04 (주)아이씨디 박막트랜지스터 어레이 제조 시스템
US8225496B2 (en) * 2007-08-31 2012-07-24 Applied Materials, Inc. Automated integrated solar cell production line composed of a plurality of automated modules and tools including an autoclave for curing solar devices that have been laminated
US20100047954A1 (en) * 2007-08-31 2010-02-25 Su Tzay-Fa Jeff Photovoltaic production line
JP5710267B2 (ja) 2007-12-21 2015-04-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シリコン構造体の製造及びプロファイル制御を伴うシリコンディープエッチング
US7955890B2 (en) * 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
US7894927B2 (en) * 2008-08-06 2011-02-22 Tokyo Electron Limited Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models for metal-gate structures
US9018098B2 (en) 2008-10-23 2015-04-28 Lam Research Corporation Silicon etch with passivation using chemical vapor deposition
US8173547B2 (en) * 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100184290A1 (en) * 2009-01-16 2010-07-22 Applied Materials, Inc. Substrate support with gas introduction openings
KR20100108715A (ko) * 2009-03-30 2010-10-08 주식회사 하이닉스반도체 비휘발성 메모리 장치의 제조방법
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8642448B2 (en) * 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
WO2012112187A1 (fr) * 2011-02-15 2012-08-23 Applied Materials, Inc. Procédé et appareil de production de plasma multizone
JP6114698B2 (ja) * 2011-03-01 2017-04-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ デュアルロードロック構成内の除害及びストリップ処理チャンバ
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
CN203205393U (zh) 2011-03-01 2013-09-18 应用材料公司 用于转移基板及限制自由基的箍组件
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
CN106847737B (zh) 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
CN103367198B (zh) * 2012-03-30 2017-12-08 盛美半导体设备（上海）有限公司 刻蚀装置及刻蚀方法
US20130323422A1 (en) * 2012-05-29 2013-12-05 Applied Materials, Inc. Apparatus for CVD and ALD with an Elongate Nozzle and Methods Of Use
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
CN103681182B (zh) * 2012-09-05 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 加热装置及等离子体加工设备
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140272684A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US20140271097A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
CN104299929A (zh) * 2013-07-19 2015-01-21 朗姆研究公司 用于原位晶片边缘和背侧等离子体清洁的系统和方法
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9548227B2 (en) 2013-10-30 2017-01-17 Nisene Technology Group Microwave induced plasma decapsulation using a dielectric plasma discharge tube
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
KR20150057379A (ko) * 2013-11-19 2015-05-28 삼성디스플레이 주식회사 기판 세정 장치
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
JP6531422B2 (ja) * 2014-03-11 2019-06-19 東京エレクトロン株式会社 プラズマ処理装置、基板処理システム、薄膜トランジスターの製造方法及び記憶媒体
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160237570A1 (en) * 2015-02-13 2016-08-18 Applied Materials, Inc. Gas delivery apparatus for process equipment
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017052905A1 (fr) * 2015-09-22 2017-03-30 Applied Materials, Inc. Appareil et procédé de dépôt sélectif
DE102016200506B4 (de) * 2016-01-17 2024-05-02 Robert Bosch Gmbh Ätzvorrichtung und Ätzverfahren
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
CN107068873A (zh) * 2016-12-27 2017-08-18 青岛黑金热工能源有限公司 用于制备钙钛矿太阳能电池的装置及方法
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
KR102619574B1 (ko) * 2017-02-10 2023-12-28 어플라이드 머티어리얼스, 인코포레이티드 딥 트렌치에서의 저온 선택적 에피택시를 위한 방법 및 장치
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
CN106966180A (zh) * 2017-03-28 2017-07-21 徐州德坤电气科技有限公司 一种钣金工厂薄平板材辅助处理单元
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN113707524B (zh) * 2020-05-20 2022-06-10 江苏鲁汶仪器有限公司 一种阻挡等离子体反流的进气结构
CN115224186A (zh) * 2022-07-25 2022-10-21 复旦大学 约瑟夫森结制备装置、方法及约瑟夫森结
US20240087924A1 (en) * 2022-09-12 2024-03-14 Hine Automation, Llc Multi-chamber Configuration

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010006070A1 (en) * 1998-07-13 2001-07-05 Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US20020007795A1 (en) * 1999-11-15 2002-01-24 Bailey Andrew D. Temperature control system for plasma processing apparatus
WO2003012567A1 (fr) * 2001-07-30 2003-02-13 Tokyo Electron Limited Reglage de la temperature de segments de paroi de chambre a plasma

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2344138A (en) 1940-05-20 1944-03-14 Chemical Developments Corp Coating method
US3109100A (en) 1960-05-19 1963-10-29 Automatic Canteen Co Photosensitive currency testing device
US3291715A (en) 1963-08-19 1966-12-13 Litton Systems Inc Apparatus for cathode sputtering including a plasmaconfining chamber
US4431898A (en) 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
JPH0763056B2 (ja) 1986-08-06 1995-07-05 三菱電機株式会社 薄膜形成装置
US4778561A (en) 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US4871431A (en) 1988-07-11 1989-10-03 Ionics, Incorporated Apparatus for the removal of dissolved solids from liquids using bipolar membranes
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5106827A (en) 1989-09-18 1992-04-21 The Perkin Elmer Corporation Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
FR2653633B1 (fr) 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
US5045166A (en) 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
US5107201A (en) 1990-12-11 1992-04-21 Ogle John S High voltage oscilloscope probe with wide frequency response
US5592328A (en) * 1991-04-19 1997-01-07 Edge Scientific Instrument Company Llc Illumination system and method for a high definition light microscope
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5505780A (en) 1992-03-18 1996-04-09 International Business Machines Corporation High-density plasma-processing tool with toroidal magnetic field
US5277751A (en) 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
DE4244173A1 (de) * 1992-12-24 1994-06-30 Vorwerk Co Interholding Auf Basis eines Vlieses hergestellte Mattenware
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5520209A (en) 1993-12-03 1996-05-28 The Dow Chemical Company Fluid relief device
KR0139346B1 (ko) * 1994-03-03 1998-06-15 김광호 박막 트랜지스터 액정표시장치의 제조방법
US5435881A (en) 1994-03-17 1995-07-25 Ogle; John S. Apparatus for producing planar plasma using varying magnetic poles
US5682517A (en) 1994-06-21 1997-10-28 Pitney Bowes Inc. Method of transferring data to a memory medium in a mailing machine
JP3340250B2 (ja) 1994-08-17 2002-11-05 株式会社東芝 バッファ回路
US5569363A (en) 1994-10-25 1996-10-29 Sony Corporation Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
US5569383A (en) * 1994-12-15 1996-10-29 Delaware Capital Formation, Inc. Filter with axially and rotatably movable wiper
EP0726593A1 (fr) 1995-02-13 1996-08-14 Applied Materials, Inc. Générateur d'espèces réactives, de haute puissance et à base de plasma
US5702530A (en) 1995-06-23 1997-12-30 Applied Materials, Inc. Distributed microwave plasma reactor for semiconductor processing
US5895548A (en) 1996-03-29 1999-04-20 Applied Komatsu Technology, Inc. High power microwave plasma applicator
EP0823218A1 (fr) 1996-08-09 1998-02-11 Chilard, Jean-Claude Procédé de préparation de succedanes de poissons jeunes et extrudeuse decoupeuse pour mettre en forme de tels produits
US5788778A (en) 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
US5770982A (en) 1996-10-29 1998-06-23 Sematech, Inc. Self isolating high frequency saturable reactor
US6055927A (en) 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US5897752A (en) 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US5935077A (en) 1997-08-14 1999-08-10 Ogle; John Seldon Noninvasive blood flow sensor using magnetic field parallel to skin
US6024044A (en) 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6172322B1 (en) 1997-11-07 2001-01-09 Applied Technology, Inc. Annealing an amorphous film using microwave energy
US6041735A (en) 1998-03-02 2000-03-28 Ball Semiconductor, Inc. Inductively coupled plasma powder vaporization for fabricating integrated circuits
US5994236A (en) 1998-01-23 1999-11-30 Ogle; John Seldon Plasma source with process nonuniformity improved using ferromagnetic cores
US6132552A (en) 1998-02-19 2000-10-17 Micron Technology, Inc. Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US5998933A (en) 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
JP3431128B2 (ja) * 1998-08-05 2003-07-28 シャープ株式会社 半導体装置の製造方法
US6283692B1 (en) * 1998-12-01 2001-09-04 Applied Materials, Inc. Apparatus for storing and moving a cassette
US6239553B1 (en) 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
US6260894B1 (en) * 1999-05-28 2001-07-17 Applied Materials, Inc. Assembly for wafer handling system
EP1212775A1 (fr) 1999-08-06 2002-06-12 Advanced Energy Industries, Inc. Appareil a source de plasma annulaire inductif destine au traitement de gaz, materiaux et procedes associes
US6432255B1 (en) 2000-01-31 2002-08-13 Applied Materials, Inc. Method and apparatus for enhancing chamber cleaning
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
JP2002151381A (ja) * 2000-11-09 2002-05-24 Nec Kagoshima Ltd パターン形成方法
US6461972B1 (en) * 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US20020132488A1 (en) * 2001-01-12 2002-09-19 Applied Materials, Inc. Method of etching tantalum
US6440753B1 (en) * 2001-01-24 2002-08-27 Infineon Technologies North America Corp. Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines
TWI243404B (en) * 2001-05-24 2005-11-11 Lam Res Corp Applications of oxide hardmasking in metal dry etch processors
JP4109135B2 (ja) * 2003-02-18 2008-07-02 株式会社日立ハイテクノロジーズ 難エッチング材のエッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010006070A1 (en) * 1998-07-13 2001-07-05 Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US20020007795A1 (en) * 1999-11-15 2002-01-24 Bailey Andrew D. Temperature control system for plasma processing apparatus
WO2003012567A1 (fr) * 2001-07-30 2003-02-13 Tokyo Electron Limited Reglage de la temperature de segments de paroi de chambre a plasma

Also Published As

Publication number Publication date
US20050224181A1 (en) 2005-10-13
CN1943003A (zh) 2007-04-04
TWI298901B (en) 2008-07-11
TW200537586A (en) 2005-11-16
US7358192B2 (en) 2008-04-15
KR20070007915A (ko) 2007-01-16
JP2007533139A (ja) 2007-11-15
WO2005101100A2 (fr) 2005-10-27

Similar Documents

Publication Publication Date Title
WO2005101100A3 (fr) Procede et appareil de traitement in-situ d'un empilement de films
US20120119211A1 (en) Thin film transistors and methods for manufacturing the same
WO2008020267A3 (fr) Procédé de gravure appliqué dans la fabrication d'un circuit intégré
US9390979B2 (en) Opposite polarity borderless replacement metal contact scheme
TW200731348A (en) Method of forming micro pattern in semiconductor device
TW200618047A (en) Method for fabricating a germanium on insulator (geoi) type wafer
TW200625468A (en) A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
WO2008042732A3 (fr) Sti en retrait pour transistors larges
TW200605356A (en) Method for fabricating a thin film transistor and related circuits
WO2008016650A3 (fr) Procédés de formation de couches épitaxiales en silicium carboné
EP1975998A3 (fr) Procédé de fabrication d'une pluralité de structures SOI sous forme d'ilôts
TW200603247A (en) SOI substrate and method for manufacturing the same
WO2010042577A3 (fr) Plateforme avancée de traitement de cellules solaires au silicium cristallin
TW200625400A (en) Integrated passive devices
WO2007127925A3 (fr) Technique de traitement stable de substrats minces/fragiles
WO2010102089A3 (fr) Procédés de dépôt de couches présentant une contamination interfaciale réduite
TW200731410A (en) Manufacturing method of semiconductor apparatus and surface processing method of SiN and SiO2 film
JP2007513517A5 (fr)
WO2005057663A3 (fr) Procede et appareil pour la fabrication de composants de circuits integres a semi-conducteurs metal-oxyde
TW200711033A (en) Semiconductor devices including trench isolation structures and methods of forming the same
WO2007146777A3 (fr) Procédé de fabrication de parois latérales de gâchette qui évite les évidements
TW200618298A (en) Fabrication method of thin film transistor
TW200742081A (en) Method for fabricating a thin film transistor
TW200623948A (en) Manufacturing method for organic electronic device
WO2007133604A3 (fr) Procédé de formation d'une structure semi-conducteur sur isolant

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007507401

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 200580011904.3

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 1020067023381

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020067023381

Country of ref document: KR

122 Ep: pct application non-entry in european phase