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WO2005015579A3 - Methods of forming three-dimensional nanodot arrays in a matrix - Google Patents

Methods of forming three-dimensional nanodot arrays in a matrix Download PDF

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Publication number
WO2005015579A3
WO2005015579A3 PCT/US2003/040150 US0340150W WO2005015579A3 WO 2005015579 A3 WO2005015579 A3 WO 2005015579A3 US 0340150 W US0340150 W US 0340150W WO 2005015579 A3 WO2005015579 A3 WO 2005015579A3
Authority
WO
WIPO (PCT)
Prior art keywords
matrix
methods
nanodot
dimensional
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/040150
Other languages
French (fr)
Other versions
WO2005015579A2 (en
Inventor
Jagdish Narayan
Ashutosh Tiwari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Priority to AU2003304408A priority Critical patent/AU2003304408A1/en
Publication of WO2005015579A2 publication Critical patent/WO2005015579A2/en
Anticipated expiration legal-status Critical
Publication of WO2005015579A3 publication Critical patent/WO2005015579A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
    • H01F1/0063—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use in a non-magnetic matrix, e.g. granular solids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.
PCT/US2003/040150 2002-12-02 2003-11-26 Methods of forming three-dimensional nanodot arrays in a matrix Ceased WO2005015579A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003304408A AU2003304408A1 (en) 2002-12-02 2003-11-26 Methods of forming three-dimensional nanodot arrays in a matrix

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43021002P 2002-12-02 2002-12-02
US60/430,210 2002-12-02

Publications (2)

Publication Number Publication Date
WO2005015579A2 WO2005015579A2 (en) 2005-02-17
WO2005015579A3 true WO2005015579A3 (en) 2005-08-11

Family

ID=34135002

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/040150 Ceased WO2005015579A2 (en) 2002-12-02 2003-11-26 Methods of forming three-dimensional nanodot arrays in a matrix

Country Status (3)

Country Link
US (1) US7105118B2 (en)
AU (1) AU2003304408A1 (en)
WO (1) WO2005015579A2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8178221B2 (en) * 2000-07-10 2012-05-15 Amit Goyal {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices
FR2874285B1 (en) * 2004-08-13 2006-10-13 Commissariat Energie Atomique METHOD FOR PRODUCING ISLET STACKS OF SEMICONDUCTOR MATERIAL ENCAPSULATED IN ANOTHER SEMICONDUCTOR MATERIAL
SE531439C2 (en) * 2005-01-07 2009-04-07 Gunnar Westin Method for making composite materials including metal particles in ceramic matrix and composite materials
US8273407B2 (en) * 2006-01-30 2012-09-25 Bergendahl Albert S Systems and methods for forming magnetic nanocomposite materials
WO2008127776A1 (en) * 2007-02-14 2008-10-23 The Regents Of The University Of California A method to determine thermal profiles of nanoscale circuitry
US8051724B1 (en) 2007-05-11 2011-11-08 SDCmaterials, Inc. Long cool-down tube with air input joints
US8575059B1 (en) 2007-10-15 2013-11-05 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
AU2008349509B2 (en) * 2008-01-28 2013-12-19 Amit Goyal Semiconductor-based large-area flexible electronic devices
US8215074B2 (en) 2008-02-05 2012-07-10 International Business Machines Corporation Pattern formation employing self-assembled material
GB2490820B (en) * 2008-05-16 2013-03-27 Vacuumschmelze Gmbh & Co Kg Article for magnetic heat exchange and methods for manufacturing an article for magnetic heat exchange
US8222740B2 (en) * 2008-10-28 2012-07-17 Jagdish Narayan Zinc oxide based composites and methods for their fabrication
KR101618188B1 (en) * 2009-12-07 2016-05-09 삼성전자 주식회사 Method of fabricating semiconductor device and semiconductor device fabricated by the same
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US8470112B1 (en) 2009-12-15 2013-06-25 SDCmaterials, Inc. Workflow for novel composite materials
US9039916B1 (en) 2009-12-15 2015-05-26 SDCmaterials, Inc. In situ oxide removal, dispersal and drying for copper copper-oxide
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8557727B2 (en) 2009-12-15 2013-10-15 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8545652B1 (en) 2009-12-15 2013-10-01 SDCmaterials, Inc. Impact resistant material
US8803025B2 (en) 2009-12-15 2014-08-12 SDCmaterials, Inc. Non-plugging D.C. plasma gun
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
AU2012299065B2 (en) 2011-08-19 2015-06-04 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9355764B2 (en) * 2013-01-14 2016-05-31 The Regents Of The University Of California Magnetoelectric control of superparamagnetism
WO2015013545A1 (en) 2013-07-25 2015-01-29 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters
WO2015061482A1 (en) 2013-10-22 2015-04-30 SDCmaterials, Inc. Compositions of lean nox trap
WO2015061477A1 (en) 2013-10-22 2015-04-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
CN106470752A (en) 2014-03-21 2017-03-01 Sdc材料公司 Compositions for passive NOx adsorption (PNA) systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113473A (en) * 1989-11-24 1992-05-12 Matsushita Electric Industrial Co., Ltd. Nonlinear, optical thin-films and manufacturing method thereof
EP0977182A2 (en) * 1998-07-31 2000-02-02 International Business Machines Corporation Magnetic storage medium formed of nanoparticles

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040168626A1 (en) * 2001-07-20 2004-09-02 Peter Moeck Process for forming semiconductor quantum dots with superior structural and phological stability
US20030108683A1 (en) * 2001-12-12 2003-06-12 Wu L. W. Manufacturing method for nano-porous coatings and thin films
WO2004027822A2 (en) * 2002-09-05 2004-04-01 Nanosys, Inc. Oriented nanostructures and methods of preparing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113473A (en) * 1989-11-24 1992-05-12 Matsushita Electric Industrial Co., Ltd. Nonlinear, optical thin-films and manufacturing method thereof
EP0977182A2 (en) * 1998-07-31 2000-02-02 International Business Machines Corporation Magnetic storage medium formed of nanoparticles

Also Published As

Publication number Publication date
WO2005015579A2 (en) 2005-02-17
AU2003304408A1 (en) 2005-02-25
US20040119064A1 (en) 2004-06-24
AU2003304408A8 (en) 2005-02-25
US7105118B2 (en) 2006-09-12

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