[go: up one dir, main page]

WO2005013321A3 - Gravure de materiaux de cellules solaires - Google Patents

Gravure de materiaux de cellules solaires Download PDF

Info

Publication number
WO2005013321A3
WO2005013321A3 PCT/US2004/023198 US2004023198W WO2005013321A3 WO 2005013321 A3 WO2005013321 A3 WO 2005013321A3 US 2004023198 W US2004023198 W US 2004023198W WO 2005013321 A3 WO2005013321 A3 WO 2005013321A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
solar cell
etching
etchant
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/023198
Other languages
English (en)
Other versions
WO2005013321A2 (fr
Inventor
Douglas H Rose
Pongsthorn Uralwong
David D Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunPower Corp
Original Assignee
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunPower Corp filed Critical SunPower Corp
Publication of WO2005013321A2 publication Critical patent/WO2005013321A2/fr
Anticipated expiration legal-status Critical
Publication of WO2005013321A3 publication Critical patent/WO2005013321A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Weting (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

La présente invention concerne une cellule solaire fabriquée par gravure d'une ou de plusieurs de ses couches sans sensiblement graver une autre couche de cette cellule solaire. Dans un mode de réalisation de cette invention, une couche de cuivre de la cellule solaire est gravée (506) sans graver sensiblement une couche supérieure métallique comprenant de l'étain. Par exemple, un agent de gravure comprenant de l'acide sulfurique et du peroxyde d'hydrogène peut être utilisé pour graver la couche de cuivre de manière sélective par rapport à la couche d'étain. Un exemple particulier de cet agent de gravure susmentionné est un agent de gravure Co-Bra Etch® modifié de façon à comprendre environ 1 % par volume d'acide sulfurique, environ 4 % par volume d'acide phosphorique et environ 2 % par volume de peroxyde d'hydrogène stabilisé. Dans un mode de réalisation de cette invention, une couche d'aluminium de la cellule solaire est gravée (514) sans graver sensiblement la couche d'étain. Par exemple un agent de gravure comprenant de l'hydroxyde de potassium peut être utilisé pour graver cette couche d'aluminium sans sensiblement graver la couche d'étain.
PCT/US2004/023198 2003-08-01 2004-07-19 Gravure de materiaux de cellules solaires Ceased WO2005013321A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/632,747 2003-08-01
US10/632,747 US7455787B2 (en) 2003-08-01 2003-08-01 Etching of solar cell materials

Publications (2)

Publication Number Publication Date
WO2005013321A2 WO2005013321A2 (fr) 2005-02-10
WO2005013321A3 true WO2005013321A3 (fr) 2006-02-02

Family

ID=34104464

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/023198 Ceased WO2005013321A2 (fr) 2003-08-01 2004-07-19 Gravure de materiaux de cellules solaires

Country Status (2)

Country Link
US (6) US7455787B2 (fr)
WO (1) WO2005013321A2 (fr)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US7455787B2 (en) * 2003-08-01 2008-11-25 Sunpower Corporation Etching of solar cell materials
GB0615650D0 (en) 2006-08-07 2006-09-13 Sun Chemical Bv An etching or plating process and resist ink
US20080134497A1 (en) * 2006-12-11 2008-06-12 Sunmodular, Inc. Modular solar panels with heat exchange & methods of making thereof
US7728219B2 (en) * 2006-12-11 2010-06-01 Sunmodular, Inc. Photovoltaic cells, modules and methods of making same
US20080135088A1 (en) * 2006-12-11 2008-06-12 Sunmodular, Inc. Interlocking solar roof tiles with heat exchange
US8557093B2 (en) 2007-03-22 2013-10-15 Sunpower Corporation Deposition system with electrically isolated pallet and anode assemblies
US8309446B2 (en) * 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
US8673679B2 (en) 2008-12-10 2014-03-18 Applied Materials Italia S.R.L. Enhanced vision system for screen printing pattern alignment
JP5449849B2 (ja) 2009-04-30 2014-03-19 シャープ株式会社 太陽電池およびその製造方法
US20100294352A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Metal patterning for electrically conductive structures based on alloy formation
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US20110277825A1 (en) * 2010-05-14 2011-11-17 Sierra Solar Power, Inc. Solar cell with metal grid fabricated by electroplating
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) * 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
EP2904643B1 (fr) 2012-10-04 2018-12-05 SolarCity Corporation Cellule solaire comportant une grille métallique électroplaquée
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
CN103107212A (zh) * 2013-02-01 2013-05-15 中国科学院上海微系统与信息技术研究所 具有电镀电极的异质结太阳电池及制备方法
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9768327B2 (en) * 2015-06-25 2017-09-19 Sunpower Corporation Etching techniques for semiconductor devices
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
DE102016124492B4 (de) 2016-08-15 2024-07-11 Kellermann Gmbh Motorradleuchte
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
JP2019121627A (ja) * 2017-12-28 2019-07-22 パナソニック株式会社 太陽電池セルの製造方法及び太陽電池セル
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
US11127871B2 (en) 2018-10-17 2021-09-21 Sunpower Corporation Structures and methods for forming electrodes of solar cells
CN115472714B (zh) * 2022-09-05 2024-07-05 通威太阳能（安徽）有限公司 不良太阳电池返工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3376164A (en) * 1963-08-01 1968-04-02 Globe Union Inc Photovoltaic power assembly
US4326180A (en) * 1979-11-05 1982-04-20 Microphase Corporation Microwave backdiode microcircuits and method of making
US4378270A (en) * 1981-10-29 1983-03-29 Learonal, Inc. Method of etching circuit boards and recovering copper from the spent etch solutions
US4922322A (en) * 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
US6097748A (en) * 1998-05-18 2000-08-01 Motorola, Inc. Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US383325A (en) * 1888-05-22 Breech-loading gun
US3629022A (en) * 1968-03-20 1971-12-21 Motorola Inc Use of platinum thin films as mask in semiconductor processing
US3833425A (en) * 1972-02-23 1974-09-03 Us Navy Solar cell array
JPS58197717A (ja) * 1982-05-13 1983-11-17 Toshiba Corp 半導体装置の製造方法
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5274402A (en) * 1990-05-21 1993-12-28 Canon Kabushiki Kaisha Image forming apparatus with fixer temperature control
US5164019A (en) * 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
KR100236283B1 (ko) * 1993-09-30 1999-12-15 미다라이 후지오 3층구조의 표면코팅재를 지닌 태양전지모듈
EP0931356B1 (fr) * 1996-09-26 2004-08-18 Akzo Nobel N.V. Une feuille photovoltaique et son procede de fabrication
JPH11131254A (ja) * 1997-10-24 1999-05-18 Nippon Parkerizing Co Ltd アルミニウム含有金属材料の表面処理方法
US6019910A (en) * 1997-12-22 2000-02-01 Ford Motor Company Etching tri-metal layers to form electronic circuits using aqueous alkaline solutions including nitrates
DE69940291D1 (de) * 1998-09-28 2009-03-05 Sharp Kk Weltraumsolarzelle
US6307148B1 (en) * 1999-03-29 2001-10-23 Shinko Electric Industries Co., Ltd. Compound semiconductor solar cell and production method thereof
US6387600B1 (en) * 1999-08-25 2002-05-14 Micron Technology, Inc. Protective layer during lithography and etch
US6281041B1 (en) * 1999-11-30 2001-08-28 Aptos Corporation Process to make a tall solder ball by placing a eutectic solder ball on top of a high lead solder ball
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6387726B1 (en) * 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6313395B1 (en) * 2000-04-24 2001-11-06 Sunpower Corporation Interconnect structure for solar cells and method of making same
US6316831B1 (en) * 2000-05-05 2001-11-13 Aptos Corporation Microelectronic fabrication having formed therein terminal electrode structure providing enhanced barrier properties
US6492197B1 (en) * 2000-05-23 2002-12-10 Unitive Electronics Inc. Trilayer/bilayer solder bumps and fabrication methods therefor
US6410362B1 (en) * 2000-08-28 2002-06-25 The Aerospace Corporation Flexible thin film solar cell
US6333457B1 (en) * 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
US6787692B2 (en) * 2000-10-31 2004-09-07 National Institute Of Advanced Industrial Science & Technology Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell
KR100379824B1 (ko) * 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판
TWI278995B (en) * 2002-01-28 2007-04-11 Nichia Corp Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7285720B2 (en) * 2003-07-21 2007-10-23 The Boeing Company, Inc. Solar cell with high-temperature front electrical contact, and its fabrication
US7244671B2 (en) * 2003-07-25 2007-07-17 Unitive International Limited Methods of forming conductive structures including titanium-tungsten base layers and related structures
US7455787B2 (en) * 2003-08-01 2008-11-25 Sunpower Corporation Etching of solar cell materials
FR2880698B1 (fr) * 2005-01-10 2007-06-01 Essilor Int Afficheur destine a etre monte sur une paire de lunettes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3376164A (en) * 1963-08-01 1968-04-02 Globe Union Inc Photovoltaic power assembly
US4326180A (en) * 1979-11-05 1982-04-20 Microphase Corporation Microwave backdiode microcircuits and method of making
US4378270A (en) * 1981-10-29 1983-03-29 Learonal, Inc. Method of etching circuit boards and recovering copper from the spent etch solutions
US4922322A (en) * 1989-02-09 1990-05-01 National Semiconductor Corporation Bump structure for reflow bonding of IC devices
US6097748A (en) * 1998-05-18 2000-08-01 Motorola, Inc. Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication

Also Published As

Publication number Publication date
WO2005013321A2 (fr) 2005-02-10
US9553229B2 (en) 2017-01-24
US20190044006A1 (en) 2019-02-07
US20110312119A1 (en) 2011-12-22
US20170162728A1 (en) 2017-06-08
US7455787B2 (en) 2008-11-25
US20050022861A1 (en) 2005-02-03
US8029683B2 (en) 2011-10-04
US20090042330A1 (en) 2009-02-12
US11264518B2 (en) 2022-03-01
US20090039312A1 (en) 2009-02-12

Similar Documents

Publication Publication Date Title
WO2005013321A3 (fr) Gravure de materiaux de cellules solaires
WO2002013241A3 (fr) Procede de gravure de nitrure de titane
WO2002095800A3 (fr) Procede de fabrication d'un appareil micromecanique par retrait d'une couche sacrificielle dotee de multiples agents de gravure sequentiels
WO2007143072B1 (fr) Gravure humide appropriÉe pour crÉer des coupes carrÉes dans du silicium, et structures rÉsultantes
WO2002080234A3 (fr) Procede de gravure au plasma d'un revetement organique antireflechissant
TW200739720A (en) High aspect ratio contacts
WO2005050700A3 (fr) Reduction de la rugosite des flancs de motif pour gravure de tranchee
WO2007003255A8 (fr) Agent de gravure de couches conductrices transparentes oxydantes
WO2004061910A3 (fr) Alteration creee par une implantation ionique avant gravure afin de retirer des couches de film minces
WO2006065630A3 (fr) Reduction de dimensions critiques de motifs d'un masque de gravure
MY145605A (en) Electrochemical etching
WO2005027233A3 (fr) Substrats de montage d'un bloc en metal solide pour dispositifs electroluminescents a semiconducteurs, et procedes d'oxydation destine a fabriquer lesdits substrats
WO2007117844A3 (fr) Boîtiers de puce de semiconducteur utilisant des puces et des substrats métalliques minces
WO2006096528A3 (fr) Structure de photoresist stabilisee pour processus d'attaque
WO2007084982A8 (fr) Procede de double damasquinage pour la fabrication de structure de fil epais
WO2012071193A3 (fr) Double modelage des contours avec amincissement de dimension critique en ligne
WO2004040618A3 (fr) Conception et procede de connexion d'interface d'un microdispositif ferme hermetiquement
WO2009042453A3 (fr) Régulation de profil dans la gravure diélectrique
WO2006033746A3 (fr) Procede de formation d'un dispositif a semi-conducteur ayant une couche metallique
EP1635224A3 (fr) Procédé et composition pour éliminer des résidus de photoréserve et de polymère
WO2011010879A3 (fr) Procédé de fabrication d'un substrat de réseau destiné à un dispositif d'affichage à cristaux liquides
WO2001099181A3 (fr) Procede de nettoyage de barrieres conductrices en retrait
TW329540B (en) The method for etching metal layer
TW200503297A (en) Method for manufacturing semiconductor device
WO2002041351A3 (fr) Procede de fabrication d'un ecran d'affichage a plasma a decharge capillaire par une combinaison de gravure a laser et de gravure humide

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase