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WO2005010895A1 - Composition liquide pour produire un film mince ferroelectrique et procede pour produire un film mince ferroelectrique - Google Patents

Composition liquide pour produire un film mince ferroelectrique et procede pour produire un film mince ferroelectrique Download PDF

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Publication number
WO2005010895A1
WO2005010895A1 PCT/JP2004/010636 JP2004010636W WO2005010895A1 WO 2005010895 A1 WO2005010895 A1 WO 2005010895A1 JP 2004010636 W JP2004010636 W JP 2004010636W WO 2005010895 A1 WO2005010895 A1 WO 2005010895A1
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WIPO (PCT)
Prior art keywords
thin film
ferroelectric
liquid composition
forming
ferroelectric thin
Prior art date
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Ceased
Application number
PCT/JP2004/010636
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English (en)
Japanese (ja)
Inventor
Kazuo Sunahara
Hiroyuki Tomonaga
Yoshihisa Beppu
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AGC Inc
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Asahi Glass Co Ltd
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Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to EP04770947A priority Critical patent/EP1650769A4/fr
Priority to JP2005512052A priority patent/JPWO2005010895A1/ja
Publication of WO2005010895A1 publication Critical patent/WO2005010895A1/fr
Priority to US11/340,548 priority patent/US20060124890A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Definitions

  • the present invention relates to a liquid composition for forming a ferroelectric thin film and a method for producing a ferroelectric thin film.
  • the present invention relates to a liquid composition for forming a ferroelectric thin film and a method for producing a ferroelectric thin film using the same.
  • FeRAM ferroelectric memory
  • Metal oxide-based materials such as lead zirconate titanate (PZT, ⁇ LZT) and bismuth-based layered perovskite ferroelectric (BLSF) have been proposed as ferroelectric materials for FeRAM. , Has been considered.
  • these ferroelectric thin films are formed by physical vapor deposition (PVD) such as sputtering, chemical vapor deposition such as MOCVD, or chemical solution deposition.
  • PVD physical vapor deposition
  • MOCVD chemical vapor deposition
  • solution method has been proposed.
  • the solution method is known to be capable of forming a ferroelectric thin film most inexpensively and easily without requiring special and expensive equipment.
  • the solution method has the merit that it is easy to precisely control the composition and can suppress the characteristic fluctuation due to the difference in composition, which is seen in many ferroelectric materials.
  • One is under consideration.
  • a solution in which a metal compound (precursor) of each component as a raw material is homogeneously dissolved is applied to a substrate, the coating film is dried, and, if necessary, provisional. After baking (Pre-bake), for example, a ferroelectric thin film is formed by baking at a temperature of about 700 ° C or higher in air to form a crystalline metal oxide thin film.
  • Organic metal compounds such as metal alkoxides, partial hydrolysates thereof, or organic acid salt-chelate complex compounds are generally used as the soluble metal compound as a raw material.
  • a stack structure in which a ferroelectric capacitor is formed on a plug has been proposed, but a reducing atmosphere at the time of forming a multilayer wiring causes fatal deterioration of the ferroelectric thin film characteristics. This is a problem.
  • a structure that solves these problems a structure has been proposed in which a ferroelectric thin film and a plate line are formed on the uppermost layer after forming a multilayer wiring, that is, after completing a logic process. Since this structure is used to form a film on a logic circuit, the firing temperature for forming a ferroelectric thin film must be reduced to about 400 to 450 ° C.
  • the present invention provides a logic required for high integration even when fired at a relatively low temperature when a ferroelectric thin film is formed by a solution method.
  • a thin film forming liquid composition capable of forming a ferroelectric thin film on a circuit and producing a thin film having excellent coercive electric field properties, spontaneous polarization properties, and particularly excellent ferroelectric properties in terms of fatigue properties, and the like.
  • An object of the present invention is to provide a method for manufacturing a ferroelectric thin film using the same.
  • the present invention is characterized by having the following configuration.
  • the crystalline ferroelectric oxide particles having an average primary particle size of less than 100 nm are dispersed and a soluble metal compound forming a ferroelectric oxide is dissolved by heating.
  • the ferroelectric material is characterized in that crystalline ferroelectric oxide particles having an average primary particle diameter of less than 100 nm are dispersed and a soluble metal compound forming a ferroelectric oxide is dissolved by heating.
  • the crystalline ferroelectric oxide particles are particles obtained by removing a glass matrix component after crystallizing the ferroelectric oxide in a glass matrix.
  • a method for producing a ferroelectric thin film comprising applying the liquid composition according to any one of the above (1) to (8) on a substrate and baking it at 550 ° C. or lower. Method.
  • a bismuth-based ferroelectric thin film when obtained by forming a film by a solution method, it can be fired at a relatively low temperature, in particular, at a temperature of 550 ° C. or lower, and further, a temperature of 500 ° C. or lower. Therefore, it is possible to form a ferroelectric thin film on a logic circuit required for high integration, and to form a thin film forming composition capable of producing a thin film having excellent ferroelectric characteristics in terms of fatigue characteristics. And a method for producing a ferroelectric thin film using the same.
  • the crystalline ferroelectric oxide particles represented by the formula [1] are essential components that serve as the basis in the composition of the present invention.
  • a bismuth-based ferroelectric thin film is formed by a solution method by using a liquid composition in which bismuth titanate crystal particles having a layered perovskite structure and having high crystallinity are dispersed in a liquid medium.
  • the firing temperature required for film formation can be dramatically reduced.
  • BLT Bismuth lanthanum titanate
  • m 3 in the above general formula.
  • the BIT particles and the BLT particles are also simply referred to as bismuth titanate crystal particles.
  • the bismuth titanate crystal particles need to have an average primary particle diameter of 100 nm or less. If the average primary particle size is larger than this, the surface irregularities at the time of forming the thin film become rough, and the filling factor in the thin film does not increase, and the dielectric properties deteriorate.
  • the average primary particle size is preferably 50 nm or less, particularly preferably 10 to 30 nm. If the average primary particle diameter is less than 10 nm, the ferroelectric properties of the particles may be undesirably reduced.
  • particles having a particularly high crystallinity can be obtained by crystallizing bismuth titanate in a glass matrix and then removing the glass matrix component.
  • a component to be precipitated as ferroelectric oxide crystal particles is dissolved in a glass base material melt, the melt is rapidly cooled, vitrified, and then heated again to perform heating annealing.
  • These are particles obtained by the glass crystallization method that precipitates microcrystals. The precipitated microcrystals are taken out by dissolving the glass matrix with an appropriate chemical solution or the like.
  • a borate type, a phosphate type, a silicate type and the like can be used, but the meltability and the ease of production of a composite compound with a target oxide and the elution of a matrix can be used. From the viewpoint of easiness, etc., a borate-based glass base material is preferably used.
  • Bismuth titanate crystal particles can be obtained in the following steps (1) and (4).
  • a glass-forming component for example, boron oxide
  • a metal oxide for example, bismuth oxide and titanium oxide
  • a glass containing metal ions having a ferroelectric oxide composition is obtained by rapidly cooling the molten glass [vitrification].
  • the ferroelectric Oxide crystal nuclei are formed and grown to a specified particle size by controlling annealing conditions.
  • Glass forming components eg, boron oxide
  • an acid, water, or a mixture thereof to obtain bismuth titanate crystal particles (eg, Bi Ti ⁇ ) [leaching].
  • Ultrafine particles crystallized in a strong glass matrix can be easily controlled in morphology. Fine particles with relatively large anisotropy can be produced depending on the conditions of annealing treatment and the like. Another advantage is that large particles can be easily obtained.
  • a soluble metal compound is a compound which can be converted into an oxide by thermal decomposition by heating or the like and exhibit ferroelectricity.
  • the target ferroelectric oxide is a composite oxide, a mixture of two or more soluble metal compounds at a predetermined ratio is used, or a composite metal containing two or more metals at a predetermined ratio.
  • these soluble metal compounds inorganic acid salts such as nitrates, organic acid salts such as ethylhexanate, organic metal complexes such as acetylacetone complex, and metal alkoxides are used. Particularly, an organic acid salt, an organic metal complex, or a metal alkoxide is preferable.
  • the soluble metal compound also functions as a binder for bismuth titanate crystal particles. Can be grown from the bismuth titanate crystal grains as nuclei, so that crystallization can be performed at a lower temperature.
  • the soluble metal compound also has the function of improving the dielectric properties of the resulting ferroelectric thin film as a whole by forming a ferroelectric oxide in the voids between the bismuth titanate crystal particles after firing by heat treatment. .
  • the soluble metal compound has a composition that forms a ferroelectric substance having substantially the same composition as the bismuth titanate crystal particles after firing, and is different from the bismuth titanate crystal particles. It may have a composition that forms a ferroelectric substance having a certain composition.
  • the liquid composition The general formula (Bi O) 2+ (A, BO) 2 — [A, is Bi 3+ , Ba 2+ , Sr 2+ , Ca 2+ ,
  • the content ratio between the bismuth titanate crystal particles and the soluble metal compound is 5 / 95-95 / 5 in terms of oxide mass when the soluble metal compound is converted into an oxide by heating. Is preferred. If the content ratio of bismuth titanate crystal particles exceeds this range, the binder component may be insufficient, and the formed thin film may not adhere to the substrate. On the other hand, when it is smaller than the above range, the effect of adding the bismuth titanate crystal particles is hardly exhibited.
  • the ratio is particularly preferably from 30/70 to 70/30.
  • the bismuth titanate crystal particles and the soluble metal compound are used to form a ferroelectric thin film as a liquid composition in which bismuth titanate crystal particles are dispersed in an appropriate liquid medium and the soluble metal compound is dissolved.
  • bismuth titanate crystal particles and a soluble metal compound may be mixed and dissolved or dispersed in a liquid medium, or each may be dispersed or dissolved in the same or different liquid medium. You can mix what you do.
  • the liquid medium is not particularly limited as long as it can dissolve the soluble metal compound.
  • water, alcohol (ethanol, 2-propanol, etc.), ether phenol (2-ethoxy) and the like are generally used.
  • Ethanol, 2-ethoxypropanol, etc.) esters (butynole acetate, ethyl lactate, etc.), ketones (acetone, methyl isobutyl ketone, etc.), ethers (dibutyl ether, dioxane, etc.), aliphatic hydrocarbons (cyclohexane, decane, etc.) ), Aromatic hydrocarbons (toluene, xylene), nitrogen-containing organic solvents (acetonitrile, N-methylpyrrolidone, etc.), or a mixed solvent of two or more of these.
  • Specific liquid The state medium is appropriately selected and mixed depending on the type and surface state of the crystal particles in the composition, the type of the soluble metal compound, and the
  • the content of the solid content (total of bismuth titanate crystal particles and the soluble metal compound) in the liquid composition of the present invention depends on the intended ferroelectric film thickness, the method of applying the liquid, and the like. Although it is adjusted as appropriate, it is usually preferable that the content be 1 to 50% by mass. When the solid content is smaller than the above range, the thickness of the thin film obtained by coating becomes extremely small, and it is necessary to repeat coating a very large number of times to obtain a desired thickness. If it is larger, the stability of the liquid may decrease.
  • a media mill such as a bead mill or a sand mill
  • an ultrasonic wave Known methods and devices such as a homogenizer such as a jet mill and a stirring mill, a jet mill, and a roll mill can be used.
  • a dispersant for dispersing the bismuth titanate crystal particles and the soluble metal compound, various surfactants for improving the rheological properties of the coating film, and the like may be used.
  • a surface treatment agent, a resin component, and the like may be included. However, if too much of these are added, they tend to remain as residual carbon after firing, so it is preferable to use the minimum necessary amount.
  • a ferroelectric thin film can be manufactured by applying the liquid composition of the present invention on a substrate and performing baking.
  • a known method can be used as a method of application.
  • Preferred examples include spin coating, dip coating, spray coating, screen printing, and transfer printing. Among them, spin coating is most preferably used in terms of homogeneity and productivity of the obtained thin film.
  • a substrate used for forming a thin film includes a single-crystal semiconductor substrate such as Si or GaAs, a single-crystal dielectric substrate such as BaTiO, SrTiO, Mg ⁇ , or Al 2 O,
  • an insulating layer such as SiO, SiN, etc.
  • a layer provided with a pha layer As a substrate, it is heat-resistant about the firing temperature.
  • the present invention is not limited to these as long as there is a property.
  • the liquid composition of the present invention After the liquid composition of the present invention has been applied onto these substrates, it is preferably dried usually at 100 400 ° C for 1 minute to 2 hours to remove the liquid medium, and then at 300 ° C or more. Firing is performed.
  • the calcination here can be performed in a low temperature range, as described above, and is preferably performed at 550 ° C or lower, and in some cases at 500 ° C or lower.
  • a temperature exceeding 550 ° C as the firing temperature, and firing at such a high temperature may be advantageous for some applications.
  • the firing time varies depending on the temperature and atmosphere, but is preferably 1 minute to 12 hours.
  • This calcination is to decompose and / or crystallize the soluble metal compound, and the atmosphere can be appropriately selected and used, such as in the air, oxygen, or an inert gas.
  • An electric furnace such as a normal diffusion furnace can be used for firing, but if a hot plate or infrared lamp annealing furnace (RTA) capable of rapidly raising the temperature is used, crystallization will be further promoted. Easy, good for ,.
  • Examples 6 to 8 are comparative examples.
  • the mixture was wet-mixed well in an automatic mortar using a small amount of ethanol, and then dried to obtain a raw material powder.
  • the obtained raw material powder was filled in a platinum container (containing 10% rhodium) with a nose for melting droplets, and heated at 1350 ° C for 2 hours in an electric furnace using molybdenum silicate as a heating element. Was melted.
  • the nozzle was heated, and the melt was dropped onto a twin roll (roll diameter 150 mm, roll rotation speed 50 i "pm, roll surface temperature 30 ° C) placed under an electric furnace to obtain a flake-like solid. .
  • the obtained flake-form solid is transparent, and as a result of powder X-ray diffraction, is an amorphous substance. Was confirmed.
  • the obtained flake-form solid was heated at 550 ° C. for 8 hours to precipitate bismuth titanate crystals in a B ⁇ glass matrix. Further, at 80 ° C
  • the obtained flake powder was added to the kept acetic acid aqueous solution of ImolZL, stirred for 6 hours, and then centrifuged, washed with water and dried to obtain a white powder.
  • this crystal diameter was 30 nm.
  • the BIT crystal particles obtained in Example 1 are dispersed in ethanol using a wet jet mill, and then coarse particles are removed by centrifugation to obtain a dispersion A containing 10% by mass of BIT.
  • the dispersion A of the dispersion A was 90 nm when measured with a laser scattering particle size distribution analyzer, and was a good dispersion.
  • the dispersion A and the soluble metal compound solution B are mixed at a mass ratio of 50Z50 to obtain a coating composition of the present invention.
  • the coating composition on Pt by spin coating and dry on a hot plate at 200 ° C for 30 minutes. After this coating-drying process is performed three times, a heat treatment is performed in oxygen at 500 ° C for 15 minutes using an RTA furnace.
  • the obtained film has a thickness of 100 nm, and as a result of X-ray diffraction, is a film consisting of only the BIT crystal phase. Furthermore, a Pt electrode with a diameter of 0.1 mm was formed on this film by DC sputtering, a post-anneal treatment was performed at 500 ° C for 5 minutes in an RTA furnace, a capacitor was formed, and the ferroelectric hysteresis characteristics were measured. The coercive electric field at this time is 32 kV / cm, and the spontaneous polarization is 5.6 ⁇ C / cm 2 . When evaluating the fatigue properties of the resulting ferroelectric capacitors, 3V, 10 8 times Sa Even after repeated iterations, the change in spontaneous polarization is kept within 5%.
  • SBT Strontium-bismuth-tantalum
  • the dispersion A and the soluble metal compound solution C are mixed at a mass ratio of 20Z80 to obtain a coating composition of the present invention.
  • the coating composition was applied to a silicon substrate on which Pt (200 nm) / Ti (20 nm) / thermal oxide Si (500 nm) was laminated in the same manner as in Example 2, followed by drying and firing.
  • the obtained film has a thickness of 110 nm, and as a result of X-ray diffraction, is a film composed of only the crystal phases of BIT and SBT. Furthermore, a Pt electrode of 0.1. ⁇ was prepared on this film by DC sputtering, and a RTA furnace was subjected to post-annealing treatment at 500 ° C for 5 minutes to produce a capacitor. The ferroelectric hysteresis characteristics were measured. Coercive electric field of 31 kV / cm and spontaneous polarization 5.5 x C / cm 2 . When evaluating the fatigue properties of the resulting ferroelectric capacitors, 3V, 10 the amount of change in eight values also spontaneous polarization after repeated cycles is suppressed to within 5%
  • Example 4-1 6 (Example 6 is a comparative example)]
  • a ferroelectric thin film was prepared and evaluated in the same manner as in Example 2 except that the mixing ratio of the dispersion A and the soluble metal compound solution B in Example 2 was changed at the ratio shown in Table 1.
  • the average primary particle size prepared by the solid phase method was 1.2 ⁇ m.
  • ⁇ Film formation / evaluation is carried out in the same manner as in Example 2 using dispersion D containing 10% by mass of crystal particles.
  • Resulting phase is a ferroelectric phase consisting of BIT single phase, but the polarization characteristics is equivalent to the film obtained in Example 2, the spontaneous polarization at 3V, 10 6 cycles in the evaluation of the fatigue characteristics It is almost zero and the deterioration is remarkable.
  • Table 1 shows the conditions for forming the ferroelectric thin film in Example 27, and Table 2 shows the dielectric and fatigue properties of the ferroelectric thin film obtained in Example 27.
  • the fatigue characteristics indicate the number of cycles in which spontaneous polarization decreases by 5% or more in the initial period in a vital test.
  • the ferroelectric thin film of the present invention can be advantageously used in the manufacture of semiconductor devices and other devices.

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Abstract

La présente invention concerne une composition liquide permettant de produire un film mince ferroélectrique présentant d'excellentes propriétés, même par frittage à basse température, ainsi qu'un procédé pour produire un film mince ferroélectrique à partir de ladite composition liquide. Cette invention est caractérisée en ce que des particules d'oxyde ferroélectrique cristallin qui présentent un diamètre particulaire primaire moyen inférieur ou égal à 100 nm, représentées par la formule générale (Bi2O2)2+(Bim-1TimO3,5m-0,5)2- [m étant un entier compris entre 1 et 5] ou par la formule générale (Bi2O2)2+(Am-1TimO3,5m-0,5)2- [A représentant Bi3+ et La3+, sous réserve que le rapport La3+/Bi3+ se trouve entre 0,05 et 0,5, et m étant un entier compris entre 1 et 5] sont dispersées dans un milieu liquide et en ce qu'un composé métallique soluble pouvant former un oxyde ferroélectrique lorsqu'il est chauffé est dissous dans ce milieu.
PCT/JP2004/010636 2003-07-28 2004-07-26 Composition liquide pour produire un film mince ferroelectrique et procede pour produire un film mince ferroelectrique Ceased WO2005010895A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04770947A EP1650769A4 (fr) 2003-07-28 2004-07-26 Composition liquide pour produire un film mince ferroelectrique et procede pour produire un film mince ferroelectrique
JP2005512052A JPWO2005010895A1 (ja) 2003-07-28 2004-07-26 強誘電体薄膜形成用液状組成物および強誘電体薄膜の製造方法
US11/340,548 US20060124890A1 (en) 2003-07-28 2006-01-27 Liquid composition for forming ferroelectric thin film and process for producing ferroelectric thin film

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JP2003-280901 2003-07-28
JP2003280901 2003-07-28

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010874A1 (fr) * 2005-07-15 2007-01-25 Asahi Glass Company, Limited Procédé servant à produire de fines particules de tantalate de strontium et de bismuth
JP2007048765A (ja) * 2005-07-13 2007-02-22 Asahi Glass Co Ltd 半導体記憶装置および絶縁体層の形成方法
WO2007020971A1 (fr) * 2005-08-19 2007-02-22 Asahi Glass Co., Ltd. Procédé de fabrication d'un substrat à couche ferroélectrique

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Publication number Priority date Publication date Assignee Title
JPWO2008018326A1 (ja) * 2006-08-11 2009-12-24 旭硝子株式会社 電気二重層キャパシタ用非水系電解液およびそれを用いた電気二重層キャパシタ
JP2008094972A (ja) 2006-10-12 2008-04-24 Adeka Corp 塗布液および該塗布液を用いたチタン酸系セラミックス膜の製造方法

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TW200512161A (en) 2005-04-01
KR20060095876A (ko) 2006-09-04
US20060124890A1 (en) 2006-06-15
JPWO2005010895A1 (ja) 2006-09-14

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