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WO2005005683A1 - Cible de pulverisation et support d'enregistrement optique - Google Patents

Cible de pulverisation et support d'enregistrement optique Download PDF

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Publication number
WO2005005683A1
WO2005005683A1 PCT/JP2004/005395 JP2004005395W WO2005005683A1 WO 2005005683 A1 WO2005005683 A1 WO 2005005683A1 JP 2004005395 W JP2004005395 W JP 2004005395W WO 2005005683 A1 WO2005005683 A1 WO 2005005683A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical recording
recording medium
alloy
target
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/005395
Other languages
English (en)
Japanese (ja)
Inventor
Hideyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Priority to JP2005511456A priority Critical patent/JP4582457B2/ja
Publication of WO2005005683A1 publication Critical patent/WO2005005683A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)

Definitions

  • the present invention relates to a sputtering method and a method for manufacturing the same, and an optical recording medium, and in particular, generation of particles during sputtering is small.
  • Ge-In-Sb-Te alloy sheet that can stably produce high-quality thin films and obtain optical recording media free of recording bit errors
  • the present invention relates to a sputtering target and an optical recording medium comprising the same alloy.
  • a phase-change optical disk records and reproduces information by heating a recording thin film on a substrate by irradiating a laser beam and causing a crystallographic phase change (amorphous crystal) in the structure of the recording thin film. More specifically, information is reproduced by detecting a change in reflectance caused by a change in an optical constant between the phases.
  • the above-mentioned phase change is performed by irradiating a laser beam with a diameter of about 1 to several meters.
  • a laser beam of 1 im passes at a linear velocity of 1 OmZs
  • the time at which a point on the optical disc is irradiated with light is 100 ns, and within this time, the phase It is necessary to detect the change and the reflectance.
  • an optical recording medium suitable for this is required.
  • D VD- phase change optical disk such as a RAM, the number of rewrites is guaranteed 10 5-10 6 times.
  • An optical recording medium has been proposed (see JP-A-2002-264155).
  • X is from In, A u, Cu, Al, Ga, P b, T i, S n At least one element selected, within the range of 0.001 ⁇ a ⁇ 0.20, 0.011 ⁇ b ⁇ 0.20, 0.40 ⁇ y ⁇ 0.90 and the recording layer
  • An optical recording medium containing nitrogen has been proposed (see JP-A-2002-264514).
  • phase change optical recording layer in which Sb and Te are essential elements and at least one or more types of X elements are added to this SbTe, where X is Ag, Au, Cu, Zn,
  • An optical recording medium which is selected from B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Cd, and Tb has been proposed. (See Japanese Patent Application Laid-Open No. 2002-245663).
  • the present invention is directed to an optical recording medium for optical recording media that generates a small amount of particles during sputtering, can stably produce a high-quality thin film, has no recording bit error, and can achieve a high recording density.
  • the present inventors have conducted intensive studies, and as a result, have achieved high recording density by selecting a Ge—In—Sb—Te alloy having an appropriate composition. It has been found that the generation of particles during sputtering can be effectively suppressed by strictly limiting the oxygen content and strictly adjusting the crystal grain size.
  • the present invention is based on this finding,
  • the optical recording medium is characterized by being in the range of 0.1 ⁇ 1 ⁇ 10, 0.1 ⁇ ; 3 ⁇ 10, 60 ⁇ r ⁇ 90, 1 0 ⁇ ⁇ ⁇ 22, where the sum of G e — I ⁇ — S b -T e alloy sputtering head and optical recording medium made of the same alloy 2.
  • the Ge—In—Sb—Te alloy sputtering target for an optical recording medium according to any one of the above 1 to 3, characterized in that the target has an average crystal grain size of 100 m or less.
  • the Ge—In—Sb—Te alloy sputtering target for optical recording media according to any one of the above items 1 to 3, wherein the target has an average crystal grain size of 50 m or less.
  • the Ge—In—Sb—Te alloy sputtering target for the optical recording medium of the present invention and the optical recording medium composed of the same alloy have low particle generation during sputtering and are stable and high in quality. This has an excellent effect that a thin film can be produced and a high recording density can be achieved without occurrence of recording bit error.
  • the Ge—In—Sb—Te alloy sputtering target for an optical recording medium of the present invention and the optical recording medium comprising the alloy are as follows: G e () -I In ( ⁇ ) —S b (r) ⁇ It is composed of T e ( ⁇ ) alloy, and assuming that the sum of the component composition ratios ⁇ , ⁇ , ⁇ , and ⁇ (atomic%) is 100, 0.1 ⁇ H ⁇ 10 and 0.1 ⁇ ⁇ ⁇ 1 0, 6 0 ⁇ f ⁇ 90, 1 0 ⁇ ⁇ ⁇ 22
  • This alloy composition is a suitable composition that can achieve a high recording density, realizes a crystallographic phase change, that is, a phase change between amorphous and crystal, and can greatly improve the number of rewrites.
  • the Ge—In—Sb—Te alloy sputtering target for an optical recording medium of the present invention has a strict oxygen content of not more than 1500 ppm, more preferably not more than 800 ppm. Limited. As a result, the generation of particles during sputtering is remarkably reduced, a stable high-quality thin film can be produced, no recording bit error occurs, and a high recording density of an optical recording medium can be achieved. Manufacturing becomes possible.
  • oxygen in the optical recording medium is selectively bonded to Ge, so that the stability of mutual transformation between amorphization and crystallization is deteriorated, and the number of times of repeated recording is reduced. Therefore, limiting (reducing as much as possible) the amount of oxygen in the optical recording medium is important for obtaining high quality films.
  • the average crystal grain size of the target should be 100 The following is also very effective. This makes it possible to produce a good thin film with no recording pit error. In particular, it is desirable that the average crystal grain size of the target is 50; m or less. Further, it is effective to set the iron content in the Ge-In-Sb-Te alloy sputtering target (recording medium) for the optical recording medium to 1 to 100 ppm. . If the addition is less than 1 ppm, the effect of the addition is ineffective, and if it exceeds lOO ppm, the CNR and D ⁇ W deteriorate, so when iron is added, the Fe content should be 1 to 100 p pm is desirable.
  • the Ge-In-Sb-Te alloy sputtering target for an optical recording medium of the present invention was obtained by synthesizing Ge powder, In powder, Sb powder, and Te powder in an ampoule. After the ingot is ground to a predetermined particle size, uniformly dispersed and mixed, using a hot press, the sintering temperature is 400 to 600 ° C, and the surface pressure is 75 to 250 kg / cm. It can be manufactured by sintering under the conditions of 2 .
  • CNR (dB) indicates a measured value at 30 m / s
  • DOW indicates an evaluation result by jitter at the time of performing overwrite recording 100 times.
  • Jitter is the value of the re-signal deviation of the minimum pit length signal (3 T) from the maximum pit length signal (11 T).
  • Table 1 shows a comparison with the examples.
  • the CNR (dB) measurement value, DOW measurement value, and sputtering conditions of the evaluation sample were performed in the same manner as in the example. table 1
  • Particles #K indicate less than 500 particles / wafer, and NG indicates more than 500 particles / wafer.
  • Examples 1 to 6 show that the oxygen content is in the range of 700 to 130 ppm, the particle size is in the range of 30 to 89 m, the CNR (dB) is in the range of 45 to 55, and the DOW However, the amount of generated particles was good.
  • Example 7 the Fe content was ⁇ 1 wtp pm, but the oxygen content in the raw material was as low as 500 ppm or less (450 wtp pm). In addition, CNR (dB), DOW, and particle generation were all good.
  • Comparative Example 1 On the other hand, in Comparative Example 1, the amount of oxygen was as large as 2000 ppm, and the amount of DOW and particles generated was poor. In Comparative Example 2, since the particle size was as large as 200 xm, the amount of generated particles was poor. In Comparative Example 3, the DOW deteriorated because the Fe content was too high at 120 ppm. In Comparative Example 4, since the oxygen content was as high as 2500 ppm and Fe ⁇ lppm, the DOW and the amount of particles generated were poor. In the absence of Fe, oxygen is high. Comparative Example 5 had a composition deviation of 62.2.Oat% (excessive), and thus had poor DOW. Comparative Example 6 had a composition deviation of ⁇ 55.0 at% (small), and thus had poor DOW.
  • the oxygen content and the particle size of the target have good CNR (dB), DOW and an effect of suppressing generation of particles within the range of the present invention.
  • the Fe content affects the amount of oxygen, and the presence of an appropriate amount of Fe has an effect of suppressing generation of particles during sputtering. It can also be seen that when the oxygen content is sufficiently low, similar good results are obtained regardless of the Fe content. 0 Industrial applicability
  • the present invention relates to an optical recording medium capable of stably producing a high-quality thin film with little generation of particles during sputtering, generating no recording bit error, and achieving a high recording density.
  • G e In — S b — Te alloy Applicable to sputtering targets, methods for manufacturing the same alloy targets, and optical recording media made of the same alloys.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

Cible de pulvérisation d'alliage de Ge(α)-In (β)-Sb(η)-Te(δ) conçue pour des supports d'enregistrement optique et caractérisée par des portées de 0,1 ≤ α ≤ 10, 0,1 ≤ β ≤ 10, 60 ≤ η ≤ 90, 10 ≤ δ ≤ 22 si la somme de leur rapport de composition respectif α, β, η, δ ( % atomique) est égale à 100. L'invention concerne également un support d'enregistrement optique constitué par cet alliage. Le processus de pulvérisation produit quelques particules, ce qui permet d'obtenir une couche mince de qualité élevée. Ce support d'enregistrement optique ne provoque pratiquement aucune erreur de bits d'enregistrement et présente une densité élevée d'enregistrement.
PCT/JP2004/005395 2003-07-15 2004-04-15 Cible de pulverisation et support d'enregistrement optique Ceased WO2005005683A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005511456A JP4582457B2 (ja) 2003-07-15 2004-04-15 スパッタリングターゲット及び光記録媒体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003274651 2003-07-15
JP2003-274651 2003-07-15
JP2003287247 2003-08-06
JP2003-287247 2003-08-06

Publications (1)

Publication Number Publication Date
WO2005005683A1 true WO2005005683A1 (fr) 2005-01-20

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JP (1) JP4582457B2 (fr)
TW (1) TWI288180B (fr)
WO (1) WO2005005683A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009010496A1 (de) 2008-02-25 2009-08-27 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe Sputtertarget
JP2009221588A (ja) * 2008-03-19 2009-10-01 Mitsubishi Materials Corp パーティクル発生の少ない相変化膜形成用スパッタリングターゲット
KR20160078478A (ko) 2014-03-25 2016-07-04 제이엑스금속주식회사 Sb-Te 기 합금 소결체 스퍼터링 타겟
US9528181B2 (en) 2011-04-22 2016-12-27 Mitsubishi Materials Corporation Sputtering target and method for producing same
JP2021028411A (ja) * 2019-08-09 2021-02-25 Ｊｘ金属株式会社 スパッタリングターゲット及び、スパッタリングターゲットの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5045804B2 (ja) * 2009-10-29 2012-10-10 住友金属鉱山株式会社 抵抗薄膜形成用スパッタリングターゲット、抵抗薄膜、薄膜抵抗器、およびこれらの製造方法
CN114717524A (zh) * 2022-04-02 2022-07-08 昆明贵研新材料科技有限公司 一种适于作久储相变存储介质的Ru-Sb-Te合金溅射靶材及其制备方法
CN114892133A (zh) * 2022-04-02 2022-08-12 昆明贵研新材料科技有限公司 一种用作久储相变存储介质的Ru-Sb-Te合金溅射靶材及其制备方法

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JPH11279752A (ja) * 1998-03-27 1999-10-12 Sumitomo Metal Mining Co Ltd 相変化型光記録用スパッタリングターゲットの製造方法
JP2000313170A (ja) * 1999-03-01 2000-11-14 Mitsubishi Chemicals Corp 光学的情報記録用媒体並びにその再生方法及び記録方法
JP2001123267A (ja) * 1999-10-26 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2002264515A (ja) * 2001-03-12 2002-09-18 Ricoh Co Ltd 光記録媒体および情報記録再生方法
JP2002269806A (ja) * 2001-03-09 2002-09-20 Ricoh Co Ltd 光情報記録媒体
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JP2003173585A (ja) * 2001-12-04 2003-06-20 Ricoh Co Ltd 相変化型光ディスクとその製造方法
JP2003196892A (ja) * 2002-10-18 2003-07-11 Matsushita Electric Ind Co Ltd 光ディスクの製造方法および製造装置

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JPH06280009A (ja) * 1993-03-30 1994-10-04 Mitsubishi Materials Corp スパッタリング用ターゲット及びその製造方法
JP3838712B2 (ja) * 1996-10-16 2006-10-25 同和鉱業株式会社 アンチモンの精製方法
JP2001316803A (ja) * 2000-04-28 2001-11-16 Honeywell Electronics Japan Kk スパッタリングターゲット材の製造方法
JP4578704B2 (ja) * 2001-03-02 2010-11-10 アルバックマテリアル株式会社 Ｗ−Ｔｉターゲット及びその製造方法
JP4432015B2 (ja) * 2001-04-26 2010-03-17 日立金属株式会社 薄膜配線形成用スパッタリングターゲット

Patent Citations (8)

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JP2003003222A (ja) * 1993-12-13 2003-01-08 Ricoh Co Ltd スパッタリング用ターゲット、その製造方法、そのターゲットを用いた光記録媒体及びその光記録媒体の製造方法
JPH11279752A (ja) * 1998-03-27 1999-10-12 Sumitomo Metal Mining Co Ltd 相変化型光記録用スパッタリングターゲットの製造方法
JP2000313170A (ja) * 1999-03-01 2000-11-14 Mitsubishi Chemicals Corp 光学的情報記録用媒体並びにその再生方法及び記録方法
JP2001123267A (ja) * 1999-10-26 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2002269806A (ja) * 2001-03-09 2002-09-20 Ricoh Co Ltd 光情報記録媒体
JP2002264515A (ja) * 2001-03-12 2002-09-18 Ricoh Co Ltd 光記録媒体および情報記録再生方法
JP2003173585A (ja) * 2001-12-04 2003-06-20 Ricoh Co Ltd 相変化型光ディスクとその製造方法
JP2003196892A (ja) * 2002-10-18 2003-07-11 Matsushita Electric Ind Co Ltd 光ディスクの製造方法および製造装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009010496A1 (de) 2008-02-25 2009-08-27 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe Sputtertarget
JP2009221588A (ja) * 2008-03-19 2009-10-01 Mitsubishi Materials Corp パーティクル発生の少ない相変化膜形成用スパッタリングターゲット
US9528181B2 (en) 2011-04-22 2016-12-27 Mitsubishi Materials Corporation Sputtering target and method for producing same
KR20160078478A (ko) 2014-03-25 2016-07-04 제이엑스금속주식회사 Sb-Te 기 합금 소결체 스퍼터링 타겟
US10854435B2 (en) 2014-03-25 2020-12-01 Jx Nippon Mining & Metals Corporation Sputtering target of sintered Sb—Te-based alloy
JP2021028411A (ja) * 2019-08-09 2021-02-25 Ｊｘ金属株式会社 スパッタリングターゲット及び、スパッタリングターゲットの製造方法
JP7261694B2 (ja) 2019-08-09 2023-04-20 Ｊｘ金属株式会社 スパッタリングターゲット及び、スパッタリングターゲットの製造方法

Also Published As

Publication number Publication date
JP4582457B2 (ja) 2010-11-17
JPWO2005005683A1 (ja) 2006-10-19
TW200502412A (en) 2005-01-16
TWI288180B (en) 2007-10-11

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