WO2005088832A1 - Filter circuit - Google Patents
Filter circuit Download PDFInfo
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- WO2005088832A1 WO2005088832A1 PCT/JP2005/003616 JP2005003616W WO2005088832A1 WO 2005088832 A1 WO2005088832 A1 WO 2005088832A1 JP 2005003616 W JP2005003616 W JP 2005003616W WO 2005088832 A1 WO2005088832 A1 WO 2005088832A1
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- WIPO (PCT)
- Prior art keywords
- circuit
- variable capacitance
- capacitance element
- parallel resonance
- filter circuit
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0153—Electrical filters; Controlling thereof
- H03H7/0161—Bandpass filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1708—Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/1775—Parallel LC in shunt or branch path
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/01—Tuned parameter of filter characteristics
- H03H2210/012—Centre frequency; Cut-off frequency
Definitions
- the present invention relates to a filter circuit, and more particularly, to a variable frequency filter circuit capable of changing a pass frequency characteristic.
- a multi-band operation using a plurality of carrier frequencies is being demanded.
- the demand is expected to increase.
- dual-band support equipment is becoming popular in wireless systems for consumers.
- domestic mobile phones include dual-band terminals such as 800 MHz band and 1.5 GHz band PDC (Personal Digital Cellular) terminals, or 2 GHz band W-CDMA (Wideband Code Division Multiple Access) and 800 MHz band PDC.
- PDC Personal Digital Cellular
- W-CDMA Wideband Code Division Multiple Access
- wireless LAN there are three mode terminals, 2.4GHz band IEEE802.11lbZg and 5.2GHz band IEEE802.11a.
- Filters are used in wireless terminals to prevent the emission of radio waves outside of a specified range during transmission, and to suppress poor communication quality due to input other than the desired signal during reception. Parts or circuits.
- FIG. 1 shows the circuit of this filter. 1 is an input terminal, 2 is an output terminal, 3 is a signal line, 4 is a parallel resonance circuit, 5 is a band control circuit, 6 and 13 are capacitors for cutting DC current, 7 is a resonance inductor, and 8 and 9 are resonance capacitors.
- 10 is a variable capacitance element using a varactor diode
- 11 is a frequency control terminal for the parallel resonance circuit 4
- 12 is a bias resistor for inputting the frequency control voltage of the parallel resonance circuit 4
- 14 is a band control circuit using a varactor diode.
- 15 is a frequency control terminal for the band control circuit 5
- 16 is a frequency control terminal for the band control circuit 5. This is a bias resistor for inputting several control voltages.
- the first conventional technique is a circuit in which a pass frequency band is defined by a parallel resonance circuit 4, and the spread of the pass frequency bandwidth is suppressed by a band control circuit 5.
- the parallel resonance circuit 4 and the band control circuit 5 have variable capacitance elements 10 and 14 (varactor diodes) whose capacitances can be changed by control voltages input from frequency control terminals 11 and 15.
- the parallel resonance circuit 4 and the band control circuit 5 change the capacitance value, so that the pass frequency bandwidth is kept almost constant while changing the resonance frequency.
- Fig. 2 horizontal axis; frequency, vertical axis; gain
- the resonance inductors 30 and 31 are resonance inductors for the parallel resonance circuits 24 and 25.
- the variable capacitance elements 26 and 27, the resonance capacitors 28 and 29, and the resonance inductors 30 and 31 are respectively parallel resonance inductors. It forms circuits 24 and 25.
- Resonant inductors 30 and 31 are electromagnetically coupled and mutual inductors And a coupling capacitor 37.
- the direct current cut capacitors 35 and 36 and the coupling capacitor 37 form a band control circuit ( Multipath circuit) 38 is formed.
- 33 and 34 are bias resistors for inputting the frequency control voltage of each parallel resonance circuit 24,25.
- the second conventional example couples two parallel resonance circuits 24 and 25 with a transformer 32 and also has a signal path passing through a coupling capacitor 37 separately from a signal path passing through the transformer 32. Te ru.
- Such a circuit having two signal paths is called a multipath circuit.
- the According to the multipath circuit when the phase difference between the signals passing through the two paths is 180 degrees, the signals cancel each other, so that a dip occurs in the frequency characteristic of the filter and the cutoff characteristic can be sharpened.
- Figure 4 shows the frequency characteristics of this filter (horizontal axis; frequency, vertical axis; gain). It is clearly seen that a sharper cutoff characteristic is obtained as compared with FIG. 2 showing the characteristic of the first conventional example.
- a problem of the conventional technique is that when the resonance frequency is changed, the pass frequency band characteristic changes.
- the pass frequency band is changed to the high frequency side by increasing the resonance frequency, the cutoff characteristics (the slope of the frequency characteristics) on the low frequency side are increased. Become gentle. This is because the frequency characteristics of the multipath circuit do not change.
- a filter circuit comprises two variable capacitance elements for parallel resonance circuits arranged between a signal path between input and output and ground, and capable of changing the resonance frequency.
- a filter circuit comprising: a parallel resonance circuit; and a first reactance coupling between the two parallel resonance circuits.
- the filter circuit connects a second reactance connected between the input and output and a connection point between the first reactance and the two parallel resonance circuits to the input and the output, respectively.
- a variable capacitance element for a band control circuit that can be varied so as to generate a dip near a pass frequency band of the resonance frequency.
- Another filter circuit of the present invention is a filter circuit including a first signal transmission path and a second signal transmission path for transmitting a signal from an input to an output.
- the first signal transmission path connects two parallel resonance circuits, each including a variable capacitance element for a parallel resonance circuit, in series with a first reactance.
- the input and the output are connected to each other via a capacitive element.
- the second signal transmission path transmits a second reactance between the input and the output to the first signal.
- the parallel resonance circuit can change the resonance frequency by the variable capacitance element for the parallel resonance circuit.
- the variable capacitance element for a band control circuit can be changed so that a dip occurs in a pass frequency band near the resonance frequency.
- the above-described filter circuit of the present invention includes means for controlling the variable capacitance element for the parallel resonance circuit and the variable capacitance element for the band control circuit so as to change the capacitance while keeping the capacitance ratio constant. You may have more.
- variable capacitance element for the parallel resonance circuit and the variable capacitance element for the band control circuit may be changed in capacitance with the same control voltage.
- FIG. 1 is a circuit diagram showing a first conventional example
- FIG. 2 is a graph showing frequency characteristics of a first conventional example.
- FIG. 3 A circuit diagram showing a second conventional example
- FIG. 4 is a graph showing frequency characteristics of a second conventional example.
- FIG. 5 is a circuit diagram for explaining the principle of the present invention.
- FIG. 6 is a circuit diagram showing a first embodiment of the present invention.
- FIG. 7 is a circuit diagram showing a second embodiment of the present invention.
- FIG. 8 is a circuit diagram showing a third embodiment of the present invention.
- FIG. 9 is a circuit diagram showing a fourth embodiment of the present invention.
- FIG. 10 is a circuit diagram showing a fifth embodiment of the present invention.
- FIG. 11 is a circuit diagram showing a sixth embodiment of the present invention.
- FIG. 12 is a circuit diagram showing a seventh embodiment of the present invention.
- FIG. 13 is a graph showing frequency characteristics of the present invention.
- FIG. 14 is a graph showing frequency characteristics for explaining the operation of the present invention.
- variable capacitance element in addition to changing the resonance frequency and changing the pass frequency band in a conventional parallel resonance circuit using a variable capacitance element, the variable capacitance element is also used in a multipath circuit. By introducing it, the frequency characteristic of the multipath circuit is also changed, thereby suppressing the change in the cutoff characteristic of the filter circuit due to the frequency change.
- the principle of the present invention utilizes the fact that the slope of the cutoff characteristic changes in the opposite direction when each variable capacitance element is changed.
- the slope of the cutoff characteristic of the parallel resonance circuit becomes gentler when the pass frequency band is changed to a higher frequency side.
- the capacitance of only the variable capacitance element in the multipath circuit is changed, as shown in the analysis result of the inventor shown in FIG. 14, as the pass frequency band is changed to the higher frequency side, the cutoff characteristic becomes higher. Becomes steep.
- the change of the cutoff characteristic accompanying the change of the frequency can be suppressed by these two canceling effects.
- the center frequency fc of the pass band of the filter is determined by the inductor L and the capacitance C constituting the resonance circuit, and is given by the following equation (1).
- the method for keeping the ratio between the input / output capacitance Cc and the resonance circuit capacitance C constant involves not only controlling the control voltage to each variable capacitance element so that this ratio is constant, but also using two variable capacitances. Can be controlled by the same voltage. At this time, the ratio between the input / output capacitance Cc and the resonance circuit capacitance C is given by the number of parallel variable elements or the area of the elements.
- FIG. 6 is a circuit diagram showing the first embodiment of the present invention.
- each of the two parallel resonance circuits 44 and 45 is composed of a series circuit of variable capacitance elements 51 and 52 and resonance capacitors 49 and 50, and resonance inductors 47 and 48 connected in parallel to the series circuit.
- the multipath circuit 46 includes a coupling capacitor 56 and variable capacitance elements 54 and 55 inserted between the coupling capacitor 56 and the parallel resonance circuits 44 and 45.
- capacitors 61 and 62 are connected in series between the input / output terminals 41 and 42 and the variable capacitance elements 54 and 55, respectively.
- the terminals of the varactors 51, 52, 54, and 55 that are not directly connected to the ground 63 (the anode side of the varactor diode that is the varactors 51, 52, 54, and 55 is connected via the resonant inductors 47 and 48).
- the two parallel resonant circuits 44 and 45 have variable capacitance elements 51 and 52 (such as varactor diodes) whose capacitance can be changed by a control voltage input to a frequency control terminal 43, respectively.
- variable capacitance elements 51 and 52 such as varactor diodes
- the signal is transmitted to the output terminal 42 through the! / Of 56 paths. Therefore, this resonance frequency determines the pass frequency band.
- This resonance frequency can be changed by changing the control voltage from the frequency control terminal 43 to change the capacitance of the variable capacitance elements 51, 52 in the parallel resonance circuits 44, 45.
- the impedance of the parallel resonance circuits 44 and 45 decreases, the ratio flowing to the ground 63 increases, and the signal input to the input terminal 41 is not transmitted to the output terminal 42.
- the phase difference between the signal passing through coupling capacitor 56 and the signal passing through coupling inductor 53 is designed to be 180 degrees at a frequency near the pass frequency band, the frequency Then, the signals of these two paths cancel each other out and are cancelled, and a dip can be created in the frequency characteristics. With this dip, the cutoff characteristics can be made steep.
- the frequency at which the dip occurs can be changed by changing the control voltage input from the frequency control terminal 43 to change the capacitance of the variable capacitance elements 54 and 55 in the multipath circuit 46.
- variable capacitance elements 51, 52, 54, 55 When changing these variable capacitance elements 51, 52, 54, 55, the capacitance ratio is changed by changing the variable capacitance elements 51, 52 of the resonance circuit and the variable capacitance elements 54, 55 of the multipath circuit with the same control voltage. By keeping the constant, the change of the cutoff characteristic is suppressed.
- the pass frequency band is changed to the higher frequency side, the slope becomes steep in the multi-nos circuit 46 as shown in FIG. 14, and becomes gentle in the parallel resonance circuits 44 and 45 as shown in FIG.
- the cutoff characteristics are maintained in a substantially constant shape even when the pass frequency band changes, as in the frequency characteristics shown in FIG. .
- FIG. 7 is a circuit diagram showing a second embodiment of the present invention.
- the same reference numerals as those in FIG. 6 denote the same components.
- the variable capacitance elements 51 and 52 are connected to the ground 63 and the resonance capacitors 49 and 50 are connected to the signal.
- the difference from the first embodiment is that the connection is made on the route side.
- the variable capacitance elements 51 and 52 are oriented such that the anode side of the nodal diode is DC-connected to the ground 63. It has become.
- the other configurations and operations are the same as those of the first embodiment, and thus description thereof will be omitted.
- FIG. 8 is a circuit diagram showing a third embodiment of the present invention.
- the components having the same reference numerals as those in FIG. 6 indicate the same components.
- each of the two parallel resonance circuits 74 and 75 is composed of a series circuit of variable capacitance elements 51 and 52 and resonance capacitors 49 and 50, and resonance inductors 71 and 72 connected in parallel to the series circuit.
- the two resonant inductors 71 and 72 are electromagnetically coupled to form a transformer 73, and the input and output are coupled by their mutual inductance.
- the multipath circuit 46 also includes a coupling capacitor 56, and variable capacitance elements 54 and 55 inserted between the coupling capacitor 56 and the parallel resonance circuits 74 and 75, and a force.
- capacitors 61 and 62 are connected in series between the input / output terminals 41 and 42 and the variable capacitance elements 54 and 55.
- the terminals of the variable capacitance elements 51, 52, 54, 55 which are not directly connected to the ground 63 are connected to the frequency control terminal 43 via the bias resistors 57-60 for inputting the frequency control voltage, respectively! Puru.
- the two parallel resonant circuits 74 and 75 have variable capacitance elements 51 and 52 (such as varactor diodes) whose capacitance can be changed by the control voltage that is input to the frequency control terminal. It looks like it is open. At this time, the input signal from the input terminal 41 has a small signal path component flowing to the ground 63, and almost 100% of the signal passes through either the mutual inductance path of the transformer 73 or the path of the coupling capacitor 56 of the multipath circuit 46. It passes through and is transmitted to the output terminal 42. Therefore, this resonance frequency determines the pass frequency band. This resonance frequency is changed by changing the capacitance of the variable capacitance elements 51 and 52 in the parallel resonance circuits 74 and 75. Can be changed. On the other hand, as the frequency is further away from the resonance frequency force, the impedance of the parallel resonance circuits 74 and 75 decreases, the ratio of flowing to the ground 63 increases, and the input signal from the input terminal 41 is not transmitted to the output terminal 42.
- variable capacitance elements 51 and 52
- phase difference between the signal passing through the coupling capacitor 56 and the signal passing through the transformer 73 is designed to be 180 degrees at a frequency in the vicinity of the pass frequency band, at this frequency, The signals in the two paths cancel each other out, canceling each other out, and creating a frequency response characteristic. With this dip, the cutoff characteristics can be made steep.
- the frequency at which this dip occurs can be changed by changing the control voltage from the frequency control terminal 43 and changing the capacitance of the variable capacitance elements 54 and 55 in the multipath circuit.
- variable capacitance elements 51, 52, 54, 55 When these variable capacitance elements 51, 52, 54, 55 are changed, the capacitance is changed by changing the variable capacitance elements 51, 52 of the resonance circuit and the variable capacitance elements 54, 55 of the multipath circuit with the same control voltage. By keeping the ratio constant, the change in the cutoff characteristics is suppressed.
- the pass frequency band is changed to the high frequency side, the slope becomes steep in the multi-noss circuit 46 as shown in FIG. 14, and becomes gentle in the parallel resonance circuits 74 and 75 as shown in FIG.
- the cutoff characteristics are maintained in a substantially constant shape even when the pass frequency band changes, as in the frequency characteristics shown in FIG. .
- FIG. 9 is a circuit diagram showing a fourth embodiment of the present invention.
- the same components as those in FIG. 8 indicate the same components.
- the third embodiment is different from the third embodiment in that, in the parallel resonance circuits 76 and 77, the variable capacitance elements 51 and 52 are connected to the ground 63 and the resonance capacitors 49 and 50 are connected to the signal path. Is different. In order to make the capacitance change due to the bias voltage of the variable capacitance elements 51 and 52 the same as that of the third embodiment, the variable capacitance elements 51 and 52 have a direction in which the anode side of the noctor diode is DC-connected to the ground 63. Have been. The other configurations and operations are the same as those of the third embodiment, and thus description thereof will be omitted.
- FIG. 14 is a circuit diagram showing a fifth embodiment of the present invention.
- the same reference numerals as those in FIG. 6 denote the same components.
- forces such as two parallel resonance circuits 44 and 45, a multipath circuit 78, and a coupling capacitor 56 are also configured.
- Each of these two parallel resonance circuits 44, 45 is composed of a series circuit of variable capacitance elements 51, 52 and resonance capacitors 49, 50, and resonance inductors 47, 48 connected in parallel to this series circuit.
- the multipath circuit 78 includes a coupling inductor 53 and variable capacitance elements 54 and 55 inserted between the coupling inductor 53 and the parallel resonance circuits 44 and 45, respectively.
- capacitors 61 and 62 are connected in series between the input / output terminals 41 and 42 and the variable capacitance elements 54 and 55.
- the terminals of the variable capacitance elements 51, 52, 54, 55 which are not directly connected to the ground are connected to the frequency control terminal 43 via bias resistors 57-60, respectively.
- This circuit operates as follows.
- the two parallel resonance circuits 44 and 45 have variable capacitance elements 51 and 52 (varactor diodes, etc.) whose capacitance can be changed by a control voltage as high as the frequency control terminal 43. I see. Therefore, in this case, the signal from the input terminal 41 has a small signal path force flowing to the ground 63, and almost 100% of the signal passes through the path of the coupling inductor 53 of the multipath circuit 78 or the coupling between the parallel resonance circuits 44 and 45. The signal is transmitted to the output terminal 42 through one of the paths of the capacitor 56. Therefore, this resonance frequency determines the pass frequency band.
- This resonance frequency can be changed by changing the capacitance of the variable capacitance elements 51, 52 in the parallel resonance circuits 44, 45.
- the impedance of the parallel resonance circuits 44 and 45 decreases, the ratio flowing to the ground 63 increases, and the input signal is not transmitted to the output terminal 42.
- the phase difference between the signal passing through the coupling capacitor 56 and the signal passing through the coupling inductor 53 is designed to be 180 degrees, At that frequency, the signals on the two paths cancel each other out and are offset, creating a dip in the frequency response. With this dip, the cutoff characteristics can be made steep.
- the frequency at which this dip occurs varies the control voltage from the frequency control
- the capacitance can be changed by changing the capacitance of the variable capacitance elements 54 and 55 in the circuit 78.
- variable capacitance elements 51, 52, 54, 55 When these variable capacitance elements 51, 52, 54, 55 are changed, the capacitance is changed by changing the variable capacitance elements 51, 52 of the resonance circuit and the variable capacitance elements 54, 55 of the multipath circuit with the same control voltage. By keeping the ratio constant, the change in the cutoff characteristics is suppressed.
- the pass frequency band is changed to the high frequency side, the slope becomes steep in the multi-noss circuit 78 as shown in FIG. 14 and conversely becomes gentle in the parallel resonance circuits 44 and 45 as shown in FIG.
- the cutoff characteristics are maintained in a substantially constant shape even when the pass frequency band changes as in the frequency characteristics shown in FIG.
- FIG. 11 is a circuit diagram showing a sixth embodiment of the present invention.
- the same components as those in FIG. 10 indicate the same components.
- variable capacitance elements 51 and 52 are connected to the ground and the resonance capacitors 49 and 50 are connected to the signal path. Is different from In order to make the capacitance change due to the noisy voltage the same as in the fifth embodiment, the variable capacitance elements 51, 52, 54, and 55 are oriented so that the anode side of the nodal diode is DC-connected to the ground 63. I have.
- the other configurations and operations are the same as those of the fifth embodiment, and thus the description is omitted.
- varactor diodes can be used for the variable capacitance elements 51, 52, 54, and 55.
- a nonode diode is an element that applies the fact that the reverse capacitance of the PN junction or Schottky junction of the diode changes with the applied voltage.
- the operation which is the object of the present invention can be realized by applying a positive voltage to the frequency control terminal and changing the voltage value.
- FIG. 12 shows a seventh embodiment of the present invention. It is a circuit diagram showing a state.
- components having the same reference numerals as those in FIG. 6 indicate the same components.
- This embodiment is different from the first embodiment in that variable capacitance elements 151, 152 and 154, 155 formed by the MEMS technology are used in the parallel resonance circuits 84, 85 and the multipath circuit 86.
- the other configurations and operations are the same as those of the first embodiment, and thus description thereof is omitted. Needless to say, such a variable capacitance element formed by the MEMS technology can be applied to the second to sixth embodiments.
- a parallel capacitance can be further added to the parallel resonance circuits 44, 45, 64, 65, 74—77, 84, 85, or a multipath variable capacitance element It is also possible to connect capacitors in series with 54,55.
- a chip capacitor may be used as a capacitor, and a chip inductor may be used as an inductor. It is also possible to use a printed circuit board or a ceramic substrate or a capacitor formed on the substrate, a spiral inductor, or a transmission line having an electrical length of 1Z4 wavelength or less.
- the number of parallel resonance circuits is not limited to two, but may be further increased, and these parallel resonance circuits may be connected by reactance.
- a first signal transmission path is formed by coupling a plurality of parallel resonance circuits with reactances (capacitors, inductors, transformers, etc.), and the first signal transmission path is formed in parallel with the first signal transmission path.
- a second signal transmission path is formed by connecting reactances (capacitors, inductors, transformers, etc.).
- the force of the first signal transmission path and the multi-noss circuit of the second signal transmission path are also cut off even if the pass frequency band is changed by changing the resonance frequency by canceling the change in the slope of the change in the cutoff characteristic.
- the characteristics are kept almost constant. Therefore, it is apparent that the present invention is not limited to the above embodiment, and can be appropriately modified within the scope of the technical idea of the present invention.
- a multi-band mobile phone that covers the 800 MHz band to the 2 GHz band is used. It can be expected to be applied to multi-band portable data communication terminals that cover the frequency range of mobile telephones in the 800 MHz band and wireless LAN frequencies in the 5 GHz band.
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Abstract
Description
明 細 書 Specification
フィルタ回路 Filter circuit
技術分野 Technical field
[0001] 本発明は、フィルタ回路に関し、特に、通過周波数特性を変化可能な周波数可変 フィルタ回路に関する。 The present invention relates to a filter circuit, and more particularly, to a variable frequency filter circuit capable of changing a pass frequency characteristic.
背景技術 Background art
[0002] 携帯電話に代表されるような最近の携帯用無線システムでは、複数の搬送周波数 を用いるマルチバンド動作が求められつつある。また、将来は、その要求がますます 強まるものと予想される。例えば、一般消費者向けの無線システムにおいてもデュア ルバンドサポートの機器が普及しつつある。例えば、国内の携帯電話では、 800MH z帯と 1. 5GHz帯の PDC (Personal Digital Cellular)端末、あるいは 2GHz帯 W— CD MA (Wideband Code Division Multiple Access)と 800MHz帯 PDCなどのデュアル バンド端末があり、無線 LANでは 2. 4GHz帯の IEEE802. l lbZgと 5. 2GHz帯 I EEE802. 11aの 3モードの端末がある。将来、さらに多くの周波数 (バンド)をサポー トするためには、無線端末内で使用されるフィルタ回路あるいはフィルタ素子(以下フ ィルタと記す)において連続的にその周波数特性を変化させる必要がある。フィルタ は、無線端末内で、送信時には決められた範囲外の電波を放射しないために使用さ れ、受信時には所望波以外の入力による通信品質の悪ィヒを抑制するために使用さ れる、重要な部品あるいは回路である。 [0002] In a recent portable wireless system represented by a mobile phone, a multi-band operation using a plurality of carrier frequencies is being demanded. In the future, the demand is expected to increase. For example, dual-band support equipment is becoming popular in wireless systems for consumers. For example, domestic mobile phones include dual-band terminals such as 800 MHz band and 1.5 GHz band PDC (Personal Digital Cellular) terminals, or 2 GHz band W-CDMA (Wideband Code Division Multiple Access) and 800 MHz band PDC. In wireless LAN, there are three mode terminals, 2.4GHz band IEEE802.11lbZg and 5.2GHz band IEEE802.11a. In order to support more frequencies (bands) in the future, it is necessary to continuously change the frequency characteristics of a filter circuit or filter element (hereinafter referred to as a filter) used in a wireless terminal. Filters are used in wireless terminals to prevent the emission of radio waves outside of a specified range during transmission, and to suppress poor communication quality due to input other than the desired signal during reception. Parts or circuits.
[0003] このような周波数特性を変化可能なフィルタ(以下、周波数可変フィルタと記す)を 実現する回路が、特開 2002-9573号公報 (第 1の従来技術)に記載されている。こ のフィルタの回路を図 1に示す。 1は入力端子、 2は出力端子、 3は信号線、 4は並列 共振回路、 5は帯域制御回路、 6, 13は直流電流カット用のキャパシタ、 7は共振イン ダクタ、 8,9は共振キャパシタ、 10はバラクタダイオードを使用した可変容量素子、 11 は並列共振回路 4用の周波数制御端子、 12は並列共振回路 4の周波数制御電圧 入力用バイアス抵抗、 14はバラクタダイオードを使用した帯域制御回路 5用の可変 容量素子、 15は帯域制御回路 5用の周波数制御端子、 16は帯域制御回路 5の周波 数制御電圧入力用バイアス抵抗である。 [0003] A circuit for realizing such a filter capable of changing the frequency characteristics (hereinafter, referred to as a frequency variable filter) is described in Japanese Patent Application Laid-Open No. 2002-9573 (first prior art). Figure 1 shows the circuit of this filter. 1 is an input terminal, 2 is an output terminal, 3 is a signal line, 4 is a parallel resonance circuit, 5 is a band control circuit, 6 and 13 are capacitors for cutting DC current, 7 is a resonance inductor, and 8 and 9 are resonance capacitors. , 10 is a variable capacitance element using a varactor diode, 11 is a frequency control terminal for the parallel resonance circuit 4, 12 is a bias resistor for inputting the frequency control voltage of the parallel resonance circuit 4, and 14 is a band control circuit using a varactor diode. 15 is a frequency control terminal for the band control circuit 5, and 16 is a frequency control terminal for the band control circuit 5. This is a bias resistor for inputting several control voltages.
[0004] この第 1の従来技術は、通過周波数帯域を並列共振回路 4で規定し、通過周波数 帯域幅の広がりを帯域制御回路 5で抑制する回路である。並列共振回路 4および帯 域制御回路 5は、周波数制御端子 11、 15から入力される制御電圧によって静電容 量を変化可能な可変容量素子 10、 14 (バラクタダイオード)を有している。そして、並 列共振回路 4および帯域制御回路 5が容量値を変えることによって、共振周波数を 変化させながら通過周波数帯域幅をほぼ一定に保っている。し力しながら、この従来 回路は、その周波数特性を示す図 2 (横軸;周波数、縦軸;ゲイン)のように、通過周 波数帯域特性の幅が広くなつてしまい、抑制したい非所望波を十分抑圧できるとは 言い難い。 [0004] The first conventional technique is a circuit in which a pass frequency band is defined by a parallel resonance circuit 4, and the spread of the pass frequency bandwidth is suppressed by a band control circuit 5. The parallel resonance circuit 4 and the band control circuit 5 have variable capacitance elements 10 and 14 (varactor diodes) whose capacitances can be changed by control voltages input from frequency control terminals 11 and 15. The parallel resonance circuit 4 and the band control circuit 5 change the capacitance value, so that the pass frequency bandwidth is kept almost constant while changing the resonance frequency. However, as shown in Fig. 2 (horizontal axis; frequency, vertical axis; gain) showing the frequency characteristics of this conventional circuit, the width of the pass frequency band characteristic becomes wider, Is hard to say.
[0005] この課題を解決可能な回路が、 Keisuke Kageyama, Kohki Saito, Hisanori Murase, Hideki Utaki, and Toshishige Yamamoto,「Tunable Active Filters Having Multilayer Structure Using LTCCJ , IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL.49, NO.12, December 2001, P.2421-2424に紹介されている。この第 2の従来例の回路を図 3に示す。 21は 入力端子、 22は出力端子、 23は並列共振回路 24,25用の周波数制御端子である。 26, 27は各並列共振回路 24,25用の可変容量素子、 28,29は各可変容量素子 26, 27と直列接続された、各並列共振回路 24,25用の共振キャパシタである。 30,31は 各並列共振回路 24,25用の共振インダクタである。これら可変容量素子 26,27、共 振キャパシタ 28, 29、および共振インダクタ 30,31は各々に並列共振回路 24,25を 形成している。共振インダクタ 30, 31は電磁的に結合し相互インダクタンスを有するト ランス 32を形成している。 35,36は直流電流カット用のキャパシタ、 37は結合キャパ シタである。これら直流電流カット用キャパシタ 35,36および結合キャパシタ 37で帯 域制御回路 (マルチパス回路) 38を形成している。 33, 34は各並列共振回路 24,25 の周波数制御電圧入力用バイアス抵抗である。 [0005] Circuits that can solve this problem are described in Keisuke Kageyama, Kohki Saito, Hisanori Murase, Hideki Utaki, and Toshishige Yamamoto, "Tunable Active Filters Having Multilayer Structure Using LTCCJ, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL.49, NO.12, December 2001, P.2421-2424, this second conventional circuit is shown in Figure 3. 21 is an input terminal, 22 is an output terminal, and 23 is a parallel resonant circuit 24,25 26 and 27 are variable capacitance elements for each parallel resonance circuit 24 and 25, and 28 and 29 are for each parallel resonance circuit 24 and 25 connected in series with each variable capacitance element 26 and 27. 30 and 31 are resonance inductors for the parallel resonance circuits 24 and 25. The variable capacitance elements 26 and 27, the resonance capacitors 28 and 29, and the resonance inductors 30 and 31 are respectively parallel resonance inductors. It forms circuits 24 and 25. Resonant inductors 30 and 31 are electromagnetically coupled and mutual inductors And a coupling capacitor 37. A direct current cut capacitor 35 and a coupling capacitor 37. The direct current cut capacitors 35 and 36 and the coupling capacitor 37 form a band control circuit ( Multipath circuit) 38 is formed.33 and 34 are bias resistors for inputting the frequency control voltage of each parallel resonance circuit 24,25.
[0006] この第 2の従来例は、 2つの並列共振回路 24,25をトランス 32で結合させるとともに 、このトランス 32を通過する信号経路とは別に結合キャパシタ 37を通過する信号経 路も有して 、る。このように 2個の信号経路を有する回路はマルチパス回路と呼ばれ る。マルチパス回路によれば、 2つの経路を通過した信号間の位相差が 180度のとき に信号が互いに打ち消し合うことでフィルタの周波数特性にディップが生じ、その遮 断特性を急峻にできる。このフィルタの周波数特性を図 4に示す (横軸;周波数、縦 軸;ゲイン)。第 1の従来例の特性を示した図 2と比べて急峻な遮断特性が得られて いることが良くわかる。 The second conventional example couples two parallel resonance circuits 24 and 25 with a transformer 32 and also has a signal path passing through a coupling capacitor 37 separately from a signal path passing through the transformer 32. Te ru. Such a circuit having two signal paths is called a multipath circuit. The According to the multipath circuit, when the phase difference between the signals passing through the two paths is 180 degrees, the signals cancel each other, so that a dip occurs in the frequency characteristic of the filter and the cutoff characteristic can be sharpened. Figure 4 shows the frequency characteristics of this filter (horizontal axis; frequency, vertical axis; gain). It is clearly seen that a sharper cutoff characteristic is obtained as compared with FIG. 2 showing the characteristic of the first conventional example.
発明の開示 Disclosure of the invention
[0007] しかしながら、従来技術の問題点は、共振周波数を変化させたときに通過周波数 帯域特性が変化してしまうことである。例えば、第 2の従来例の周波数特性を示した 図 4のように、共振周波数を高めることにより通過周波数帯域を高周波側に変化させ るに従って、低周波側の遮断特性 (周波数特性の傾き)が緩やかになる。これはマル チパス回路の周波数特性が変化しな 、ことに起因して 、る。 [0007] However, a problem of the conventional technique is that when the resonance frequency is changed, the pass frequency band characteristic changes. For example, as shown in Fig. 4 showing the frequency characteristics of the second conventional example, as the pass frequency band is changed to the high frequency side by increasing the resonance frequency, the cutoff characteristics (the slope of the frequency characteristics) on the low frequency side are increased. Become gentle. This is because the frequency characteristics of the multipath circuit do not change.
[0008] 本発明の目的は、上記従来技術の問題点を解決し、周波数変化時の遮断特性の 変化が小さな周波数可変フィルタ回路を提供することにあり、また、これによりマルチ バンド端末の小型化を実現することにある。 [0008] It is an object of the present invention to solve the above-mentioned problems of the prior art, and to provide a frequency variable filter circuit in which a change in cutoff characteristics at the time of frequency change is small. It is to realize.
[0009] 上記目的を達成するために、この発明のフィルタ回路は、入出力間の信号経路とグ ランドの間に配置され並列共振回路用可変容量素子で共振周波数を変えることがで きる 2つの並列共振回路と、前記 2つの並列共振回路間を結合した第 1リアクタンスと を備えたフィルタ回路である。そして、このフィルタ回路は、前記入出力間に接続され た第 2リアクタンスと、前記第 1リアクタンスと前記 2つの並列共振回路との接続点のそ れぞれを前記入力と前記出力に接続し、前記共振周波数の通過周波数帯域近傍で ディップを生じるように可変することができる帯域制御回路用可変容量素子とを備え ている。 [0009] To achieve the above object, a filter circuit according to the present invention comprises two variable capacitance elements for parallel resonance circuits arranged between a signal path between input and output and ground, and capable of changing the resonance frequency. A filter circuit comprising: a parallel resonance circuit; and a first reactance coupling between the two parallel resonance circuits. The filter circuit connects a second reactance connected between the input and output and a connection point between the first reactance and the two parallel resonance circuits to the input and the output, respectively. A variable capacitance element for a band control circuit that can be varied so as to generate a dip near a pass frequency band of the resonance frequency.
[0010] また、この発明の他のフィルタ回路は、入力から出力に信号を伝達する第 1信号伝 達パスおよび第 2信号伝達パスを備えたフィルタ回路である。このフィルタ回路にお いて、前記第 1信号伝達パスは、並列共振回路用可変容量素子をそれぞれ含む 2つ の並列共振回路を第 1リアクタンスで直列接続し、それら接続した点を帯域制御回路 用可変容量素子を介してそれぞれ前記入力と前記出力に接続した構成である。また 、前記第 2信号伝達パスは、前記入力と前記出力間に第 2リアクタンスを前記第 1信 号伝達パスと並列に接続した構成である。さらに、前記並列共振回路は、前記並列 共振回路用可変容量素子で共振周波数を変えることができる。前記帯域制御回路 用可変容量素子は、前記共振周波数の近傍で通過周波数帯域にディップを生じる よう〖こ変ィ匕させることができる。 [0010] Another filter circuit of the present invention is a filter circuit including a first signal transmission path and a second signal transmission path for transmitting a signal from an input to an output. In this filter circuit, the first signal transmission path connects two parallel resonance circuits, each including a variable capacitance element for a parallel resonance circuit, in series with a first reactance. In this configuration, the input and the output are connected to each other via a capacitive element. Further, the second signal transmission path transmits a second reactance between the input and the output to the first signal. This is a configuration connected in parallel with the signal transmission path. Further, the parallel resonance circuit can change the resonance frequency by the variable capacitance element for the parallel resonance circuit. The variable capacitance element for a band control circuit can be changed so that a dip occurs in a pass frequency band near the resonance frequency.
[0011] また、上述した本発明のフィルタ回路は、前記並列共振回路用可変容量素子と前 記帯域制御回路用可変容量素子の容量の比を一定に保ったまま容量変化するよう 制御する手段を更に有して 、てもよ 、。 Further, the above-described filter circuit of the present invention includes means for controlling the variable capacitance element for the parallel resonance circuit and the variable capacitance element for the band control circuit so as to change the capacitance while keeping the capacitance ratio constant. You may have more.
[0012] また、上述した本発明のフィルタ回路は、前記並列共振回路用可変容量素子と前 記帯域制御回路用可変容量素子を同一制御電圧で容量変化させることとしてもよい 図面の簡単な説明 [0012] In the above-described filter circuit of the present invention, the variable capacitance element for the parallel resonance circuit and the variable capacitance element for the band control circuit may be changed in capacitance with the same control voltage.
[0013] [図 1]第 1の従来例を示す回路図 FIG. 1 is a circuit diagram showing a first conventional example
[図 2]第 1の従来例の周波数特性を示すグラフ FIG. 2 is a graph showing frequency characteristics of a first conventional example.
[図 3]第 2の従来例を示す回路図 [FIG. 3] A circuit diagram showing a second conventional example
[図 4]第 2の従来例の周波数特性を示すグラフ FIG. 4 is a graph showing frequency characteristics of a second conventional example.
[図 5]本発明の原理を説明するための回路図 FIG. 5 is a circuit diagram for explaining the principle of the present invention.
[図 6]本発明の第 1の実施の形態を示す回路図 FIG. 6 is a circuit diagram showing a first embodiment of the present invention.
[図 7]本発明の第 2の実施の形態を示す回路図 FIG. 7 is a circuit diagram showing a second embodiment of the present invention.
[図 8]本発明の第 3の実施の形態を示す回路図 FIG. 8 is a circuit diagram showing a third embodiment of the present invention.
[図 9]本発明の第 4の実施の形態を示す回路図 FIG. 9 is a circuit diagram showing a fourth embodiment of the present invention.
[図 10]本発明の第 5の実施の形態を示す回路図 FIG. 10 is a circuit diagram showing a fifth embodiment of the present invention.
[図 11]本発明の第 6の実施の形態を示す回路図 FIG. 11 is a circuit diagram showing a sixth embodiment of the present invention.
[図 12]本発明の第 7の実施の形態を示す回路図 FIG. 12 is a circuit diagram showing a seventh embodiment of the present invention.
[図 13]本発明の周波数特性を示すグラフ FIG. 13 is a graph showing frequency characteristics of the present invention.
[図 14]本発明の作用を説明するための周波数特性を示すグラフ FIG. 14 is a graph showing frequency characteristics for explaining the operation of the present invention.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0014] 本発明は、従来のような可変容量素子を用いた並列共振回路で共振周波数を変 ィ匕させ通過周波数帯域を変化させるのに加え、マルチパス回路にも可変容量素子を 導入することでマルチパス回路の周波数特性をも変化させることで、周波数の変化に 伴うフィルタ回路の遮断特性の変化を抑えて 、る。 According to the present invention, in addition to changing the resonance frequency and changing the pass frequency band in a conventional parallel resonance circuit using a variable capacitance element, the variable capacitance element is also used in a multipath circuit. By introducing it, the frequency characteristic of the multipath circuit is also changed, thereby suppressing the change in the cutoff characteristic of the filter circuit due to the frequency change.
[0015] 本発明の原理は、それぞれの可変容量素子を変化させたときの遮断特性の傾きの 変化が逆方向であることを利用したものである。まず、並列共振回路の遮断特性は、 背景技術の説明にて図 4に示したように、通過周波数帯域を高周波側に変化させる と傾きが緩くなる。これに対して、マルチパス回路中の可変容量素子のみの容量を変 化させたときには、図 14に示した発明者の解析結果のように、通過周波数帯域を高 周波側に変化させるに従って遮断特性の傾きは急峻になる。本発明によれば、この 2 つの相殺効果によって周波数の変化に伴う遮断特性の変化を抑制できる。 [0015] The principle of the present invention utilizes the fact that the slope of the cutoff characteristic changes in the opposite direction when each variable capacitance element is changed. First, as shown in FIG. 4 in the description of the background art, the slope of the cutoff characteristic of the parallel resonance circuit becomes gentler when the pass frequency band is changed to a higher frequency side. On the other hand, when the capacitance of only the variable capacitance element in the multipath circuit is changed, as shown in the analysis result of the inventor shown in FIG. 14, as the pass frequency band is changed to the higher frequency side, the cutoff characteristic becomes higher. Becomes steep. According to the present invention, the change of the cutoff characteristic accompanying the change of the frequency can be suppressed by these two canceling effects.
[0016] 本発明の原理における遮断特性変化の条件について更に詳しく説明する。図 5の フィルタ回路を参照すると、フィルタの通過帯域の中心周波数 fcは、共振回路を構成 するインダクタ Lと容量 Cにより決定され、次の式(1)で与えられる。 [0016] The conditions for changing the cutoff characteristics in the principle of the present invention will be described in more detail. Referring to the filter circuit of FIG. 5, the center frequency fc of the pass band of the filter is determined by the inductor L and the capacitance C constituting the resonance circuit, and is given by the following equation (1).
[0017] [数 1] [0017] [number 1]
"一 2π ∑0 (】) また、通過帯域幅 Δ ίは、マルチパス回路の容量 Cm、入出力容量 Cc、結合インダ クタンス Lm、および共振回路容量 Cを用いて、次の式(2)で近似的に与えられる。 "One 2π ∑0 ()) The pass bandwidth Δ ί is calculated by the following equation (2) using the multipath circuit capacitance Cm, input / output capacitance Cc, coupling inductance Lm, and resonance circuit capacitance C. Approximately given.
[0018] [数 2] [0018] [number 2]
この式(2)から、 Lmと Cm—定の元で、入出力容量 Ccと共振回路容量 Cの比を一 定に保ちつつ、これらの容量を変化させれば、通過帯域幅を変化させることなく中心 周波数を変化させることができることがわかる。本発明による周波数可変特性の例を 図 14に示す。遮断特性の傾きと通過帯域幅を一定に保ちながら中心周波数を変化 させており、通過帯域を一定に保つことが、遮断特性の傾きを一定に保つことに対応 していると言える。 From this equation (2), it is found that if Lm and Cm are fixed and the ratio between the input / output capacitance Cc and the resonance circuit capacitance C is kept constant and these capacitances are changed, the pass bandwidth can be changed. It can be seen that the center frequency can be changed without any change. An example of a frequency variable characteristic according to the present invention Figure 14 shows. The center frequency is changed while keeping the slope of the cutoff characteristic and the passband width constant, and it can be said that keeping the passband constant corresponds to keeping the slope of the cutoff characteristic constant.
[0019] 入出力容量 Ccと共振回路容量 Cの比を一定に保っための方法は、この比が一定 になるように各可変容量素子への制御電圧を制御するだけでなく、 2つの可変容量 を同一の電圧で制御することでも実現できる。このとき入出力容量 Ccと共振回路容 量 Cの比は可変容量素子の並列数または素子の面積で与えられる。 The method for keeping the ratio between the input / output capacitance Cc and the resonance circuit capacitance C constant involves not only controlling the control voltage to each variable capacitance element so that this ratio is constant, but also using two variable capacitances. Can be controlled by the same voltage. At this time, the ratio between the input / output capacitance Cc and the resonance circuit capacitance C is given by the number of parallel variable elements or the area of the elements.
[0020] 以下、実施の形態により具体的な説明をする。 Hereinafter, a specific description will be given according to an embodiment.
(第 1の実施の形態) (First Embodiment)
本発明の実施の形態について図面を参照して詳細に説明する。図 6は本発明の第 1の実施の形態を示す回路図である。 Embodiments of the present invention will be described in detail with reference to the drawings. FIG. 6 is a circuit diagram showing the first embodiment of the present invention.
く構成の説明〉 Description of configuration>
図 6を参照すると、本発明の実施の形態は、 2つの並列共振回路 44,45、それを結 合する結合インダクタ 53、及びマルチパス回路 46など力も構成されている。そして、 2つの並列共振回路 44,45はそれぞれ、可変容量素子 51, 52と共振キャパシタ 49,5 0の直列回路、及びこの直列回路に並列接続された共振インダクタ 47,48で構成さ れる。また、マルチパス回路 46は、結合キャパシタ 56、及びこの結合キャパシタ 56と 並列共振回路 44,45間に挿入された可変容量素子 54,55から構成される。 Referring to FIG. 6, in the embodiment of the present invention, two parallel resonance circuits 44 and 45, a coupling inductor 53 connecting them, and a multipath circuit 46 are also configured. Each of the two parallel resonance circuits 44 and 45 is composed of a series circuit of variable capacitance elements 51 and 52 and resonance capacitors 49 and 50, and resonance inductors 47 and 48 connected in parallel to the series circuit. The multipath circuit 46 includes a coupling capacitor 56 and variable capacitance elements 54 and 55 inserted between the coupling capacitor 56 and the parallel resonance circuits 44 and 45.
[0021] さらに、入出力端子 41,42と可変容量素子 54,55の間にキャパシタ 61, 62がそれぞ れ直列に接続されている。可変容量素子 51、 52、 54、 55の直流的にグランド 63に 接続されていない端子(可変容量素子 51、 52、 54、 55であるバラクタダイオードの アノード側は、共振インダクタ 47、 48を介して直流的にグランド 63に接続されている) は、それぞれ周波数制御電圧入力用のバイアス抵抗 57— 60を介して周波数制御端 子 43に接続されて!、る。この端子は単一の制御電圧で制御されて!、る。 Further, capacitors 61 and 62 are connected in series between the input / output terminals 41 and 42 and the variable capacitance elements 54 and 55, respectively. The terminals of the varactors 51, 52, 54, and 55 that are not directly connected to the ground 63 (the anode side of the varactor diode that is the varactors 51, 52, 54, and 55 is connected via the resonant inductors 47 and 48). Are connected to the frequency control terminal 43 via bias resistors 57-60 for frequency control voltage input, respectively. This terminal is controlled by a single control voltage! RU
く動作の説明〉 Explanation of operation>
本回路は次のように動作する。 2つの並列共振回路 44,45は、周波数制御端子 43 力 入力される制御電圧によって静電容量を変化可能な可変容量素子 51,52 (バラ クタダイオードなど)をそれぞれ有し、その共振周波数にぉ ヽてハイインピーダンスと なり開放に見える。そのため、入力端子 41からの入力信号は、信号経路からグランド 63に流れる成分が小さくなり、ほぼ 100%が並列共振回路 44、 45間の結合インダク タ 53の経路、またはマルチパス回路 46の結合キャパシタ 56の経路の!/、ずれかを通 過して出力端子 42に伝達される。従って、この共振周波数が通過周波数帯域を決 定する。この共振周波数は、周波数制御端子 43からの制御電圧を変化させて並列 共振回路 44、 45における可変容量素子 51、 52の容量を変化させることにより、変化 させることができる。一方、周波数が共振周波数力 離れるに従って、並列共振回路 44、 45のインピーダンスが低下し、グランド 63へ流れる割合が増加し、入力端子 41 力 入力された信号は出力端子 42に伝達されなくなる。 This circuit operates as follows. The two parallel resonant circuits 44 and 45 have variable capacitance elements 51 and 52 (such as varactor diodes) whose capacitance can be changed by a control voltage input to a frequency control terminal 43, respectively. With high impedance It looks open. Therefore, in the input signal from the input terminal 41, the component flowing from the signal path to the ground 63 becomes small, and almost 100% of the input signal passes through the path of the coupling inductor 53 between the parallel resonance circuits 44 and 45 or the coupling capacitor of the multipath circuit 46. The signal is transmitted to the output terminal 42 through the! / Of 56 paths. Therefore, this resonance frequency determines the pass frequency band. This resonance frequency can be changed by changing the control voltage from the frequency control terminal 43 to change the capacitance of the variable capacitance elements 51, 52 in the parallel resonance circuits 44, 45. On the other hand, as the frequency departs from the resonance frequency, the impedance of the parallel resonance circuits 44 and 45 decreases, the ratio flowing to the ground 63 increases, and the signal input to the input terminal 41 is not transmitted to the output terminal 42.
[0022] ここで、通過周波数帯域近傍の周波数で、結合キャパシタ 56を通過する信号と結 合インダクタ 53を通過する信号との位相差が 180度となるように設計しておけば、そ の周波数で、この 2つの経路の信号同士が打ち消しあって相殺され、周波数特性に ディップを作ることができる。このディップによって遮断特性を急峻にできる。ここで、 このディップが生じる周波数は、周波数制御端子 43から入力される制御電圧を変え てマルチパス回路 46における可変容量素子 54,55の容量を変えることにより、変化 させることがでさる。 Here, if the phase difference between the signal passing through coupling capacitor 56 and the signal passing through coupling inductor 53 is designed to be 180 degrees at a frequency near the pass frequency band, the frequency Then, the signals of these two paths cancel each other out and are cancelled, and a dip can be created in the frequency characteristics. With this dip, the cutoff characteristics can be made steep. Here, the frequency at which the dip occurs can be changed by changing the control voltage input from the frequency control terminal 43 to change the capacitance of the variable capacitance elements 54 and 55 in the multipath circuit 46.
[0023] これらの可変容量素子 51, 52,54,55を変化させるとき、共振回路の可変容量素子 51, 52とマルチパス回路の可変容量素子 54, 55を同一制御電圧で変化させて容量 比を一定に保つことで遮断特性の変化を抑制して 、る。通過周波数帯域を高周波側 に変化させたとき、マルチノス回路 46では図 14に示したように傾斜が急峻になり、並 列共振回路 44、 45では図 4に示したように逆に緩くなる。この 2つの遮断特性の傾き の変化の相殺により、本発明のフィルタ回路では、図 13に示した周波数特性のように 、通過周波数帯域が変化しても遮断特性はほぼ一定の形状に保たれる。 When changing these variable capacitance elements 51, 52, 54, 55, the capacitance ratio is changed by changing the variable capacitance elements 51, 52 of the resonance circuit and the variable capacitance elements 54, 55 of the multipath circuit with the same control voltage. By keeping the constant, the change of the cutoff characteristic is suppressed. When the pass frequency band is changed to the higher frequency side, the slope becomes steep in the multi-nos circuit 46 as shown in FIG. 14, and becomes gentle in the parallel resonance circuits 44 and 45 as shown in FIG. By canceling out the changes in the slopes of the two cutoff characteristics, in the filter circuit of the present invention, the cutoff characteristics are maintained in a substantially constant shape even when the pass frequency band changes, as in the frequency characteristics shown in FIG. .
(第 2の実施の形態) (Second embodiment)
次に、本発明の他の実施の形態として、第 2の実施の形態を説明する。 Next, a second embodiment will be described as another embodiment of the present invention.
[0024] 図 7は本発明の第 2の実施の形態を示す回路図である。図 7において、図 6と同一 符号のものは同じものを示している。この実施の形態は、並列共振回路 64,65にお いて、可変容量素子 51, 52をグランド 63側に接続し、共振キャパシタ 49, 50を信号 経路側に接続したことが第 1の実施の形態と異なっている。バイアス電圧による可変 容量素子 51,52の容量変化を第 1の実施の形態と同じにするため、可変容量素子 5 1,52は、ノ ラクタダイオードのアノード側が直流的にグランド 63に接続される向きとな つている。これ以外の構成および動作は第 1の実施の形態と同一であるため説明は 省略する。 FIG. 7 is a circuit diagram showing a second embodiment of the present invention. In FIG. 7, the same reference numerals as those in FIG. 6 denote the same components. In this embodiment, in the parallel resonance circuits 64 and 65, the variable capacitance elements 51 and 52 are connected to the ground 63 and the resonance capacitors 49 and 50 are connected to the signal. The difference from the first embodiment is that the connection is made on the route side. In order to make the capacitance change of the variable capacitance elements 51 and 52 due to the bias voltage the same as in the first embodiment, the variable capacitance elements 51 and 52 are oriented such that the anode side of the nodal diode is DC-connected to the ground 63. It has become. The other configurations and operations are the same as those of the first embodiment, and thus description thereof will be omitted.
(第 3の実施の形態) (Third embodiment)
次に、本発明の第 3の実施の形態について図面を参照して詳細に説明する。図 8 は本発明の第 3の実施の形態を示す回路図である。図 8において図 6と同一符号の ものは同じものを示している。 Next, a third embodiment of the present invention will be described in detail with reference to the drawings. FIG. 8 is a circuit diagram showing a third embodiment of the present invention. In FIG. 8, the components having the same reference numerals as those in FIG. 6 indicate the same components.
[0025] 図 8を参照すると、本実施の形態は、 2つの並列共振回路 74,75、およびマルチパ ス回路 46など力も構成されている。そして、 2つの並列共振回路 74,75はそれぞれ、 可変容量素子 51, 52と共振キャパシタ 49,50の直列回路、及びこの直列回路に並列 接続された共振インダクタ 71,72で構成されている。 2つの共振インダクタ 71, 72は電 磁的に結合してトランス 73を構成し、その相互インダクタンスにより入出力を結合して いる。また、マルチパス回路 46は、結合キャパシタ 56と、結合キャパシタ 56と並列共 振回路 74,75の間に挿入された可変容量素子 54,55と、力も構成される。 Referring to FIG. 8, in the present embodiment, two parallel resonance circuits 74 and 75 and a multi-path circuit 46 are also configured. Each of the two parallel resonance circuits 74 and 75 is composed of a series circuit of variable capacitance elements 51 and 52 and resonance capacitors 49 and 50, and resonance inductors 71 and 72 connected in parallel to the series circuit. The two resonant inductors 71 and 72 are electromagnetically coupled to form a transformer 73, and the input and output are coupled by their mutual inductance. The multipath circuit 46 also includes a coupling capacitor 56, and variable capacitance elements 54 and 55 inserted between the coupling capacitor 56 and the parallel resonance circuits 74 and 75, and a force.
[0026] さらに、入出力端子 41,42と可変容量素子 54,55の間にキャパシタ 61, 62が直列 に接続されている。可変容量素子 51, 52,54,55の直流的にグランド 63に接続されて いない端子はそれぞれ周波数制御電圧入力用のバイアス抵抗 57— 60を介して周 波数制御端子 43に接続されて!ヽる。 [0026] Furthermore, capacitors 61 and 62 are connected in series between the input / output terminals 41 and 42 and the variable capacitance elements 54 and 55. The terminals of the variable capacitance elements 51, 52, 54, 55 which are not directly connected to the ground 63 are connected to the frequency control terminal 43 via the bias resistors 57-60 for inputting the frequency control voltage, respectively! Puru.
[0027] 本回路は次のように動作する。 2つの並列共振回路 74,75は、周波数制御端子 43 力 入力される制御電圧によって静電容量を変化可能な可変容量素子 51,52 (バラ クタダイオードなど)を有し、その共振周波数においてハイインピーダンスとなり開放 に見える。このとき入力端子 41からの入力信号は、信号経路力もグランド 63に流れる 成分が小さくなり、ほぼ 100%がトランス 73の相互インダクタンスの経路、またはマル チパス回路 46の結合キャパシタ 56の経路のいずれかを通過して出力端子 42に伝 達される。従って、この共振周波数が通過周波数帯域を決定する。この共振周波数 は、並列共振回路 74,75における可変容量素子 51, 52の容量を変化させることで、 変化させることができる。一方、周波数が共振周波数力も離れるに従って、並列共振 回路 74,75のインピーダンスが低下し、グランド 63へ流れる割合が増加し、入力端子 41からの入力信号は出力端子 42に伝達されなくなる。 [0027] This circuit operates as follows. The two parallel resonant circuits 74 and 75 have variable capacitance elements 51 and 52 (such as varactor diodes) whose capacitance can be changed by the control voltage that is input to the frequency control terminal. It looks like it is open. At this time, the input signal from the input terminal 41 has a small signal path component flowing to the ground 63, and almost 100% of the signal passes through either the mutual inductance path of the transformer 73 or the path of the coupling capacitor 56 of the multipath circuit 46. It passes through and is transmitted to the output terminal 42. Therefore, this resonance frequency determines the pass frequency band. This resonance frequency is changed by changing the capacitance of the variable capacitance elements 51 and 52 in the parallel resonance circuits 74 and 75. Can be changed. On the other hand, as the frequency is further away from the resonance frequency force, the impedance of the parallel resonance circuits 74 and 75 decreases, the ratio of flowing to the ground 63 increases, and the input signal from the input terminal 41 is not transmitted to the output terminal 42.
[0028] さらに、通過周波数帯域近傍の周波数において、結合キャパシタ 56を通過する信 号とトランス 73を通過する信号の位相差が 180度となるように設計しておけば、その 周波数で、この 2つの経路の信号同士が打ち消しあって相殺され、周波数特性にデ イッブを作ることができる。このディップによって遮断特性を急峻にできる。ここで、この ディップが生じる周波数は、周波数制御端子 43からの制御電圧を変化させマルチパ ス回路中の可変容量素子 54,55の容量を変化させることで、変化させることができる Further, if the phase difference between the signal passing through the coupling capacitor 56 and the signal passing through the transformer 73 is designed to be 180 degrees at a frequency in the vicinity of the pass frequency band, at this frequency, The signals in the two paths cancel each other out, canceling each other out, and creating a frequency response characteristic. With this dip, the cutoff characteristics can be made steep. Here, the frequency at which this dip occurs can be changed by changing the control voltage from the frequency control terminal 43 and changing the capacitance of the variable capacitance elements 54 and 55 in the multipath circuit.
[0029] これらの可変容量素子 51, 52,54,55を変化させたとき、共振回路の可変容量素子 51, 52とマルチパス回路の可変容量素子 54, 55を同一制御電圧で変化させて容量 比を一定に保つことで遮断特性の変化を抑制して 、る。通過周波数帯域を高周波側 に変化させたとき、マルチノ ス回路 46では図 14に示したように傾斜が急峻になり、並 列共振回路 74,75では図 4に示したように逆に緩くなる。この 2つの遮断特性の傾き の変化の相殺により、本発明のフィルタ回路では、図 13に示した周波数特性のように 、通過周波数帯域が変化しても遮断特性はほぼ一定の形状に保たれる。 When these variable capacitance elements 51, 52, 54, 55 are changed, the capacitance is changed by changing the variable capacitance elements 51, 52 of the resonance circuit and the variable capacitance elements 54, 55 of the multipath circuit with the same control voltage. By keeping the ratio constant, the change in the cutoff characteristics is suppressed. When the pass frequency band is changed to the high frequency side, the slope becomes steep in the multi-noss circuit 46 as shown in FIG. 14, and becomes gentle in the parallel resonance circuits 74 and 75 as shown in FIG. By canceling out the changes in the slopes of the two cutoff characteristics, in the filter circuit of the present invention, the cutoff characteristics are maintained in a substantially constant shape even when the pass frequency band changes, as in the frequency characteristics shown in FIG. .
(第 4の実施の形態) (Fourth embodiment)
次に本発明の第 4の実施の形態を説明する。図 9は本発明の第 4の実施の形態を 示す回路図である。図 9において、図 8と同一符号のものは同じものを示している。 Next, a fourth embodiment of the present invention will be described. FIG. 9 is a circuit diagram showing a fourth embodiment of the present invention. In FIG. 9, the same components as those in FIG. 8 indicate the same components.
[0030] この実施の形態は、並列共振回路 76,77において、可変容量素子 51, 52をグラン ド 63側に、共振キャパシタ 49,50を信号経路側に接続したことが第 3の実施の形態と 異なっている。可変容量素子 51, 52のバイアス電圧による容量変化を第 3の実施の 形態と同じにするため、可変容量素子 51, 52は、ノ クタダイオードのアノード側が 直流的にグランド 63に接続される向きとされている。これ以外の構成および動作は第 3の実施の形態と同一であるため説明は省略する。 The third embodiment is different from the third embodiment in that, in the parallel resonance circuits 76 and 77, the variable capacitance elements 51 and 52 are connected to the ground 63 and the resonance capacitors 49 and 50 are connected to the signal path. Is different. In order to make the capacitance change due to the bias voltage of the variable capacitance elements 51 and 52 the same as that of the third embodiment, the variable capacitance elements 51 and 52 have a direction in which the anode side of the noctor diode is DC-connected to the ground 63. Have been. The other configurations and operations are the same as those of the third embodiment, and thus description thereof will be omitted.
(第 5の実施の形態) (Fifth embodiment)
次に、本発明の第 5の実施の形態について図面を参照して詳細に説明する。図 10 は本発明の第 5の実施の形態を示す回路図である。図 10において、図 6と同一符号 のものは同じものを示している。 Next, a fifth embodiment of the present invention will be described in detail with reference to the drawings. Fig 10 FIG. 14 is a circuit diagram showing a fifth embodiment of the present invention. In FIG. 10, the same reference numerals as those in FIG. 6 denote the same components.
[0031] 図 10を参照すると、本実施の形態は、 2つの並列共振回路 44,45、マルチパス回 路 78、及び結合キャパシタ 56など力も構成されている。これら 2つの並列共振回路 4 4,45はそれぞれ、可変容量素子 51, 52と共振キャパシタ 49,50の直列回路、及びこ の直列回路に並列接続された共振インダクタ 47,48で構成されている。また、マルチ パス回路 78は、結合インダクタ 53、及びこの結合インダクタ 53と並列共振回路 44,4 5の間にそれぞれ挿入された可変容量素子 54,55から構成される。 Referring to FIG. 10, in the present embodiment, forces such as two parallel resonance circuits 44 and 45, a multipath circuit 78, and a coupling capacitor 56 are also configured. Each of these two parallel resonance circuits 44, 45 is composed of a series circuit of variable capacitance elements 51, 52 and resonance capacitors 49, 50, and resonance inductors 47, 48 connected in parallel to this series circuit. The multipath circuit 78 includes a coupling inductor 53 and variable capacitance elements 54 and 55 inserted between the coupling inductor 53 and the parallel resonance circuits 44 and 45, respectively.
[0032] さらに、入出力端子 41,42と可変容量素子 54,55間にキャパシタ 61,62が直列に 接続されている。可変容量素子 51, 52,54,55の直流的にグランドに接続されていな い端子は、それぞれバイアス抵抗 57— 60を介して、周波数制御端子 43に接続され ている。 Further, capacitors 61 and 62 are connected in series between the input / output terminals 41 and 42 and the variable capacitance elements 54 and 55. The terminals of the variable capacitance elements 51, 52, 54, 55 which are not directly connected to the ground are connected to the frequency control terminal 43 via bias resistors 57-60, respectively.
[0033] 本回路は次のように動作する。 2つの並列共振回路 44,45は、周波数制御端子 43 力もの制御電圧によって静電容量を変化可能な可変容量素子 51,52 (バラクタダイ オードなど)を有し、その共振周波数においてハイインピーダンスとなり開放に見える 。そのため、このとき入力端子 41からの信号は、信号経路力もグランド 63に流れる成 分が小さくなり、ほぼ 100%がマルチパス回路 78の結合インダクタ 53の経路、または 並列共振回路 44,45間の結合キャパシタ 56の経路のいずれかを通過して出力端子 42に伝達される。従って、この共振周波数が通過周波数帯域を決定する。この共振 周波数は、並列共振回路 44,45における可変容量素子 51,52の容量を変化させる ことにより、変化させることができる。一方、周波数が共振周波数力 離れるに従って 、並列共振回路 44,45のインピーダンスが低下し、グランド 63へ流れる割合が増加し 、入力信号は出力端子 42に伝達されなくなる。 [0033] This circuit operates as follows. The two parallel resonance circuits 44 and 45 have variable capacitance elements 51 and 52 (varactor diodes, etc.) whose capacitance can be changed by a control voltage as high as the frequency control terminal 43. I see. Therefore, in this case, the signal from the input terminal 41 has a small signal path force flowing to the ground 63, and almost 100% of the signal passes through the path of the coupling inductor 53 of the multipath circuit 78 or the coupling between the parallel resonance circuits 44 and 45. The signal is transmitted to the output terminal 42 through one of the paths of the capacitor 56. Therefore, this resonance frequency determines the pass frequency band. This resonance frequency can be changed by changing the capacitance of the variable capacitance elements 51, 52 in the parallel resonance circuits 44, 45. On the other hand, as the frequency departs from the resonance frequency, the impedance of the parallel resonance circuits 44 and 45 decreases, the ratio flowing to the ground 63 increases, and the input signal is not transmitted to the output terminal 42.
[0034] ここで、通過周波数帯域近傍の周波数にお!、て、結合キャパシタ 56を通過する信 号と結合インダクタ 53を通過する信号の位相差が 180度となるように設計しておけば 、その周波数で 2つの経路の信号同士が打ち消しあって相殺され周波数特性にディ ップを作ることができる。このディップによって遮断特性を急峻にできる。ここで、この ディップが生じる周波数は、周波数制御端子 43からの制御電圧を変化させマルチパ ス回路 78における可変容量素子 54, 55の容量を変化させることで、変化させることが できる。 Here, at a frequency near the pass frequency band, if the phase difference between the signal passing through the coupling capacitor 56 and the signal passing through the coupling inductor 53 is designed to be 180 degrees, At that frequency, the signals on the two paths cancel each other out and are offset, creating a dip in the frequency response. With this dip, the cutoff characteristics can be made steep. Here, the frequency at which this dip occurs varies the control voltage from the frequency control The capacitance can be changed by changing the capacitance of the variable capacitance elements 54 and 55 in the circuit 78.
[0035] これらの可変容量素子 51, 52,54,55を変化させたとき、共振回路の可変容量素子 51 , 52とマルチパス回路の可変容量素子 54, 55を同一制御電圧で変化させて容量 比を一定に保つことで遮断特性の変化を抑制して 、る。通過周波数帯域を高周波側 に変化させたとき、マルチノ ス回路 78では図 14に示したように傾斜が急峻になり、並 列共振回路 44、 45では図 4に示したように逆に緩くなる。この 2つの遮断特性の傾き の変化の相殺により、本発明のフィルタ回路では、図 13に示した周波数特性のように 通過周波数帯域が変化しても遮断特性はほぼ一定の形状に保たれる。 When these variable capacitance elements 51, 52, 54, 55 are changed, the capacitance is changed by changing the variable capacitance elements 51, 52 of the resonance circuit and the variable capacitance elements 54, 55 of the multipath circuit with the same control voltage. By keeping the ratio constant, the change in the cutoff characteristics is suppressed. When the pass frequency band is changed to the high frequency side, the slope becomes steep in the multi-noss circuit 78 as shown in FIG. 14 and conversely becomes gentle in the parallel resonance circuits 44 and 45 as shown in FIG. By canceling out the changes in the slopes of the two cutoff characteristics, in the filter circuit of the present invention, the cutoff characteristics are maintained in a substantially constant shape even when the pass frequency band changes as in the frequency characteristics shown in FIG.
(第 6の実施の形態) (Sixth embodiment)
次に本発明の第 6の実施の形態を説明する。図 11は本発明の第 6の実施の形態を 示す回路図である。図 11において、図 10と同一符号のものは同じものを示している Next, a sixth embodiment of the present invention will be described. FIG. 11 is a circuit diagram showing a sixth embodiment of the present invention. In FIG. 11, the same components as those in FIG. 10 indicate the same components.
[0036] この実施の形態は、並列共振回路 44,45において、可変容量素子 51, 52をグラン ド側に接続し、共振キャパシタ 49,50を信号経路側に接続したことが第 5の実施形態 と異なっている。ノ ィァス電圧による容量変化を第 5の実施の形態と同じとするため、 可変容量素子 51 , 52,54,55は、ノ ラクタダイオードのアノード側が直流的にグランド 63に接続される向きとされている。これ以外の構成および動作は第 5の実施の形態と 同一であるため説明は省略する。 In this embodiment, in the parallel resonance circuits 44 and 45, the variable capacitance elements 51 and 52 are connected to the ground and the resonance capacitors 49 and 50 are connected to the signal path. Is different from In order to make the capacitance change due to the noisy voltage the same as in the fifth embodiment, the variable capacitance elements 51, 52, 54, and 55 are oriented so that the anode side of the nodal diode is DC-connected to the ground 63. I have. The other configurations and operations are the same as those of the fifth embodiment, and thus the description is omitted.
[0037] 以上、第 1から第 6の実施の形態について説明してきたが、本発明を実施するにあ たって、可変容量素子 51, 52,54,55にはバラクタダイオードを使用することができる 。ノ クタダイオードは、ダイオードの PN接合あるいはショットキー接合の逆方向容量 が印加電圧によって変化することを応用した素子である。図 6—図 11に示した実施の 形態においてバラクタダイオードを使用した場合には、周波数制御端子に正の電圧 を印加し、その電圧値を変えることで本発明の目的となる動作が実現できる。 Although the first to sixth embodiments have been described above, in implementing the present invention, varactor diodes can be used for the variable capacitance elements 51, 52, 54, and 55. A nonode diode is an element that applies the fact that the reverse capacitance of the PN junction or Schottky junction of the diode changes with the applied voltage. When a varactor diode is used in the embodiment shown in FIG. 6 to FIG. 11, the operation which is the object of the present invention can be realized by applying a positive voltage to the frequency control terminal and changing the voltage value.
[0038] また、バラクタダイオードに代えて、図 12に示したように、 MEMS (Micro [0038] Instead of a varactor diode, as shown in FIG.
Electro Mechanical Systems)技術を用いた可変容量素子や、強誘電体の誘電率の 非線形性を利用した可変容量素子も使用できる。図 12は、本発明の第 7の実施の形 態を示す回路図である。図 12において、図 6と同一符号のものは同じものを示してい る。この実施の形態は、並列共振回路 84,85とマルチパス回路 86において、 MEM S技術で形成した可変容量素子 151, 152および 154,155を使用したことが第 1の実 施の形態と異なっている。これ以外の構成および動作は第 1の実施の形態と同一で あるため説明は省略する。このような MEMS技術で作成した可変容量素子は第 2か ら第 6の実施形態にも適用できることは言うまでもない。 A variable capacitance element using Electro Mechanical Systems) technology and a variable capacitance element utilizing the nonlinearity of the dielectric constant of a ferroelectric can also be used. FIG. 12 shows a seventh embodiment of the present invention. It is a circuit diagram showing a state. In FIG. 12, components having the same reference numerals as those in FIG. 6 indicate the same components. This embodiment is different from the first embodiment in that variable capacitance elements 151, 152 and 154, 155 formed by the MEMS technology are used in the parallel resonance circuits 84, 85 and the multipath circuit 86. The other configurations and operations are the same as those of the first embodiment, and thus description thereof is omitted. Needless to say, such a variable capacitance element formed by the MEMS technology can be applied to the second to sixth embodiments.
[0039] また、所望の周波数特性を得るために並列共振回路 44,45,64,65,74— 77,84,8 5にさらに並列の容量をカ卩えること、あるいはマルチパス用可変容量素子 54,55と直 列に容量を接続することも可能である。 Further, in order to obtain a desired frequency characteristic, a parallel capacitance can be further added to the parallel resonance circuits 44, 45, 64, 65, 74—77, 84, 85, or a multipath variable capacitance element It is also possible to connect capacitors in series with 54,55.
[0040] また、本発明の実施において、容量としてチップコンデンサ、インダクタとしてチップ インダクタを使用しても良い。また、プリント基板あるいはセラミック基板の基板中ある いは基板上に形成した容量、スパイラルインダクタ、電気長が 1Z4波長以下の伝送 線路を使用することもできる。 In the embodiment of the present invention, a chip capacitor may be used as a capacitor, and a chip inductor may be used as an inductor. It is also possible to use a printed circuit board or a ceramic substrate or a capacitor formed on the substrate, a spiral inductor, or a transmission line having an electrical length of 1Z4 wavelength or less.
[0041] また、並列共振回路が 2つの構成に限らず、更に増設し、これら並列共振回路間を リアクタンスで接続したものとすることもできる。 Further, the number of parallel resonance circuits is not limited to two, but may be further increased, and these parallel resonance circuits may be connected by reactance.
[0042] また、本発明は、複数の並列共振回路間をリアクタンス (キャパシタ、インダクタ、トラ ンスなど)で結合して第 1の信号伝達パスを形成し、この第 1の信号伝達パスと並列に リアクタンス (キャパシタ、インダクタ、トランスなど)を接続して第 2の信号伝達パス (マ ルチパス回路)を形成した構成である。そして、共振周波数を変化させる際に、通過 周波数帯域近傍の周波数で、これら 2つのパスを通過する信号の位相差が 180度と なるように、可変容量素子を変化させて周波数特性にディップを作る。し力も、これら 第 1の信号伝達パスと第 2の信号伝達パスのマルチノ ス回路とにおける遮断特性の 変化の傾きの変化の相殺により、共振周波数を変化させて通過周波数帯域が変化し ても遮断特性はほぼ一定の形状に保つようにしている。したがって、本発明は上記実 施の形態に限定されず、本発明のこのような技術思想の範囲において適宜変更され 得ることは明らかである。 Further, according to the present invention, a first signal transmission path is formed by coupling a plurality of parallel resonance circuits with reactances (capacitors, inductors, transformers, etc.), and the first signal transmission path is formed in parallel with the first signal transmission path. In this configuration, a second signal transmission path (multipath circuit) is formed by connecting reactances (capacitors, inductors, transformers, etc.). When changing the resonance frequency, the variable capacitance element is changed to create a dip in the frequency characteristics so that the phase difference between the signals passing through these two paths becomes 180 degrees at a frequency near the pass frequency band. . The force of the first signal transmission path and the multi-noss circuit of the second signal transmission path are also cut off even if the pass frequency band is changed by changing the resonance frequency by canceling the change in the slope of the change in the cutoff characteristic. The characteristics are kept almost constant. Therefore, it is apparent that the present invention is not limited to the above embodiment, and can be appropriately modified within the scope of the technical idea of the present invention.
産業上の利用可能性 Industrial applicability
[0043] 本発明の活用例として、 800MHz帯から 2GHz帯をカバーするマルチバンドの携 帯電話、 800MHz帯の携帯電話の周波数から 5GHz帯の無線 LANの周波数を力 バーするマルチバンドの携帯データ通信端末などへの応用が期待できる。 As an application example of the present invention, a multi-band mobile phone that covers the 800 MHz band to the 2 GHz band is used. It can be expected to be applied to multi-band portable data communication terminals that cover the frequency range of mobile telephones in the 800 MHz band and wireless LAN frequencies in the 5 GHz band.
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2006510920A JP4655038B2 (en) | 2004-03-16 | 2005-03-03 | Filter circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004075379 | 2004-03-16 | ||
| JP2004-075379 | 2004-03-16 |
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| PCT/JP2005/003616 Ceased WO2005088832A1 (en) | 2004-03-16 | 2005-03-03 | Filter circuit |
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| WO (1) | WO2005088832A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5189097B2 (en) * | 2007-08-23 | 2013-04-24 | 太陽誘電株式会社 | Filter, duplexer, module including duplexer, and communication device |
| JP2017508385A (en) * | 2014-02-26 | 2017-03-23 | エプコス アクチエンゲゼルシャフトEpcos Ag | Tunable HF filter circuit |
| JP2017523643A (en) * | 2014-08-20 | 2017-08-17 | スナップトラック・インコーポレーテッド | Tunable HF filter with parallel resonator |
| US9876479B2 (en) | 2008-12-25 | 2018-01-23 | Fujitsu Limited | Filter |
| KR20180107272A (en) | 2016-03-14 | 2018-10-01 | 가부시키가이샤 무라타 세이사쿠쇼 | Frequency variable LC filter, high frequency front end module and communication device |
| US10284163B2 (en) | 2015-09-09 | 2019-05-07 | Murata Manufacturing Co., Ltd. | Frequency-variable LC filter and high-frequency front end circuit |
| US10432163B2 (en) | 2015-02-02 | 2019-10-01 | Murata Manufacturing Co., Ltd. | Variable filter circuit, high frequency module circuit, and communication device |
| WO2020008759A1 (en) * | 2018-07-03 | 2020-01-09 | 株式会社村田製作所 | High-frequency filter, multiplexer, high-frequency front-end circuit, and communication device |
| US11320473B2 (en) * | 2016-08-22 | 2022-05-03 | Pioneer Corporation | Capacitance detection device and optical wavelength-selective filter device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6418841U (en) * | 1987-07-23 | 1989-01-30 | ||
| JPH08316767A (en) * | 1995-05-18 | 1996-11-29 | Yaesu Musen Co Ltd | Band pass filter |
| JPH10256809A (en) * | 1997-03-07 | 1998-09-25 | Matsushita Electric Ind Co Ltd | Electronically tuned polarized filter |
| JP2000165172A (en) * | 1998-11-27 | 2000-06-16 | Kyocera Corp | Distributed constant filter |
| JP2001119257A (en) * | 1999-10-07 | 2001-04-27 | Lg Electronics Inc | Very high frequency variable filter using microelectronic mechanical system |
| JP2001313580A (en) * | 2000-04-28 | 2001-11-09 | New Japan Radio Co Ltd | Image signal elimination filter |
| JP2002009573A (en) * | 2000-06-26 | 2002-01-11 | Mitsubishi Electric Corp | Tunable filter |
| JP2003045748A (en) * | 2001-07-26 | 2003-02-14 | Kyocera Corp | Tunable thin-film capacitor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5748721U (en) * | 1980-09-01 | 1982-03-18 | ||
| JPH02290332A (en) * | 1989-02-17 | 1990-11-30 | Toshiba Corp | Phase locked loop circuit |
| JPH10209714A (en) * | 1996-11-19 | 1998-08-07 | Sharp Corp | Voltage-controlled passband variable filter and high-frequency circuit module using the same |
| JP3810281B2 (en) * | 2001-04-17 | 2006-08-16 | アルプス電気株式会社 | Television tuner |
| FR2826645B1 (en) * | 2001-07-02 | 2004-06-04 | Memscap | MICROELECTROMECHANICAL COMPONENT |
-
2005
- 2005-03-03 WO PCT/JP2005/003616 patent/WO2005088832A1/en not_active Ceased
- 2005-03-03 JP JP2006510920A patent/JP4655038B2/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6418841U (en) * | 1987-07-23 | 1989-01-30 | ||
| JPH08316767A (en) * | 1995-05-18 | 1996-11-29 | Yaesu Musen Co Ltd | Band pass filter |
| JPH10256809A (en) * | 1997-03-07 | 1998-09-25 | Matsushita Electric Ind Co Ltd | Electronically tuned polarized filter |
| JP2000165172A (en) * | 1998-11-27 | 2000-06-16 | Kyocera Corp | Distributed constant filter |
| JP2001119257A (en) * | 1999-10-07 | 2001-04-27 | Lg Electronics Inc | Very high frequency variable filter using microelectronic mechanical system |
| JP2001313580A (en) * | 2000-04-28 | 2001-11-09 | New Japan Radio Co Ltd | Image signal elimination filter |
| JP2002009573A (en) * | 2000-06-26 | 2002-01-11 | Mitsubishi Electric Corp | Tunable filter |
| JP2003045748A (en) * | 2001-07-26 | 2003-02-14 | Kyocera Corp | Tunable thin-film capacitor |
Non-Patent Citations (1)
| Title |
|---|
| KAGEYAMA K. ET AL: "Tunable Active Filters Having Multhilayer Structure Using LTCC", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 49, no. 12, December 2001 (2001-12-01), pages 2421 - 2424, XP001067492 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5189097B2 (en) * | 2007-08-23 | 2013-04-24 | 太陽誘電株式会社 | Filter, duplexer, module including duplexer, and communication device |
| US9876479B2 (en) | 2008-12-25 | 2018-01-23 | Fujitsu Limited | Filter |
| US10236855B2 (en) | 2014-02-26 | 2019-03-19 | Snaptrack, Inc. | Tunable RF filter circuit |
| JP2017508385A (en) * | 2014-02-26 | 2017-03-23 | エプコス アクチエンゲゼルシャフトEpcos Ag | Tunable HF filter circuit |
| JP2017523643A (en) * | 2014-08-20 | 2017-08-17 | スナップトラック・インコーポレーテッド | Tunable HF filter with parallel resonator |
| US10432163B2 (en) | 2015-02-02 | 2019-10-01 | Murata Manufacturing Co., Ltd. | Variable filter circuit, high frequency module circuit, and communication device |
| US10284163B2 (en) | 2015-09-09 | 2019-05-07 | Murata Manufacturing Co., Ltd. | Frequency-variable LC filter and high-frequency front end circuit |
| KR20180107272A (en) | 2016-03-14 | 2018-10-01 | 가부시키가이샤 무라타 세이사쿠쇼 | Frequency variable LC filter, high frequency front end module and communication device |
| JPWO2017159112A1 (en) * | 2016-03-14 | 2019-02-28 | 株式会社村田製作所 | Frequency variable LC filter, high frequency front end module, and communication device |
| US10439582B2 (en) | 2016-03-14 | 2019-10-08 | Murata Manufacturing Co., Ltd. | Variable-frequency LC filter, high-frequency frontend module, and communication apparatus |
| US11320473B2 (en) * | 2016-08-22 | 2022-05-03 | Pioneer Corporation | Capacitance detection device and optical wavelength-selective filter device |
| WO2020008759A1 (en) * | 2018-07-03 | 2020-01-09 | 株式会社村田製作所 | High-frequency filter, multiplexer, high-frequency front-end circuit, and communication device |
| US11336252B2 (en) | 2018-07-03 | 2022-05-17 | Murata Manufacturing Co., Ltd. | Radio frequency filter, multiplexer, radio frequency front end circuit, and communication apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2005088832A1 (en) | 2008-04-24 |
| JP4655038B2 (en) | 2011-03-23 |
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