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WO2005071135A3 - Tantalum and other metals with (110) orientation - Google Patents

Tantalum and other metals with (110) orientation Download PDF

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Publication number
WO2005071135A3
WO2005071135A3 PCT/US2005/000354 US2005000354W WO2005071135A3 WO 2005071135 A3 WO2005071135 A3 WO 2005071135A3 US 2005000354 W US2005000354 W US 2005000354W WO 2005071135 A3 WO2005071135 A3 WO 2005071135A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
tantalum
metals
orientation
texture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/000354
Other languages
French (fr)
Other versions
WO2005071135A2 (en
Inventor
Charles E Wickersham Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of WO2005071135A2 publication Critical patent/WO2005071135A2/en
Anticipated expiration legal-status Critical
Publication of WO2005071135A3 publication Critical patent/WO2005071135A3/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Tantalum metal, niobium metal, alloys thereof and other bcc metals and alloys thereof having a texture of primary or mixed (110) on the surface and/or throughout the thickness of the metal is described. Also described are the processes for making the tantalum metal and other bcc metal with a texture of primary or mixed (110) and the process of making a sputtering target from the tantalum metal or other bcc metal with a texture of primary or mixed (110).
PCT/US2005/000354 2004-01-08 2005-01-06 Tantalum and other metals with (110) orientation Ceased WO2005071135A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53516404P 2004-01-08 2004-01-08
US60/535,164 2004-01-08

Publications (2)

Publication Number Publication Date
WO2005071135A2 WO2005071135A2 (en) 2005-08-04
WO2005071135A3 true WO2005071135A3 (en) 2006-09-14

Family

ID=34806906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/000354 Ceased WO2005071135A2 (en) 2004-01-08 2005-01-06 Tantalum and other metals with (110) orientation

Country Status (2)

Country Link
US (1) US20050155677A1 (en)
WO (1) WO2005071135A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8252126B2 (en) * 2004-05-06 2012-08-28 Global Advanced Metals, Usa, Inc. Sputter targets and methods of forming same by rotary axial forging
US20070051623A1 (en) * 2005-09-07 2007-03-08 Howmet Corporation Method of making sputtering target and target
US20070169853A1 (en) * 2006-01-23 2007-07-26 Heraeus, Inc. Magnetic sputter targets manufactured using directional solidification
US8552529B2 (en) 2007-04-11 2013-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US20080251889A1 (en) * 2007-04-11 2008-10-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
KR101288651B1 (en) 2009-05-22 2013-07-22 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Tantalum sputtering target
JP4913261B2 (en) 2009-08-11 2012-04-11 Ｊｘ日鉱日石金属株式会社 Tantalum sputtering target
SG174152A1 (en) * 2009-08-11 2011-10-28 Jx Nippon Mining & Metals Corp Tantalum sputtering target
CN103052733B (en) 2010-08-09 2015-08-12 吉坤日矿日石金属株式会社 Tantalum sputtering target
US20120291699A1 (en) * 2011-02-11 2012-11-22 Matthew Fonte Crucibles made with the cold form process
WO2013080801A1 (en) * 2011-11-30 2013-06-06 Jx日鉱日石金属株式会社 Tantalum sputtering target and method for manufacturing same
CN103028898A (en) * 2012-08-16 2013-04-10 宁夏东方钽业股份有限公司 Preparing method of high-performance tantalum target
US9543457B2 (en) 2012-09-28 2017-01-10 First Solar, Inc. Method and system for manufacturing back contacts of photovoltaic devices
US9771637B2 (en) 2014-12-09 2017-09-26 Ati Properties Llc Composite crucibles and methods of making and using the same
CN113418946B (en) * 2021-07-30 2022-08-09 贵研检测科技（云南）有限公司 High-calibration-rate EBSD sample preparation method for ruthenium metal
WO2025037642A1 (en) * 2023-08-17 2025-02-20 東ソー株式会社 Metal sputtering target, metal sputtering target structure, method for producing film using same, and method for producing metal sputtering target

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165845A (en) * 1988-12-19 1990-06-26 Daido Steel Co Ltd Method for producing single crystals of high melting point metals
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
WO2004024978A1 (en) * 2002-09-13 2004-03-25 Tosoh Smd, Inc. Non-planar sputter targets having crystallographic orientations promoting uniform deposition
WO2004064114A2 (en) * 2003-01-07 2004-07-29 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335073A (en) * 1963-12-27 1967-08-08 Gen Electric Method of making anodized tantalum foil
US3335037A (en) * 1963-12-27 1967-08-08 Gen Electric Method for producing tantalum sheet
US4425318A (en) * 1981-11-12 1984-01-10 Allied Corporation Hydriding body-centered cubic phase alloys at room temperature
JP2919306B2 (en) * 1995-05-31 1999-07-12 日本電気株式会社 Method for manufacturing low-resistance tantalum thin film, low-resistance tantalum wiring and electrode
US6159285A (en) * 1998-05-07 2000-12-12 Virginia Semiconductor, Inc. Converting <100> and <111> ingots to <110> ingots
US6283357B1 (en) * 1999-08-03 2001-09-04 Praxair S.T. Technology, Inc. Fabrication of clad hollow cathode magnetron sputter targets
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6585870B1 (en) * 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
US7718117B2 (en) * 2000-09-07 2010-05-18 Kabushiki Kaisha Toshiba Tungsten sputtering target and method of manufacturing the target
US6770154B2 (en) * 2001-09-18 2004-08-03 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US6976380B1 (en) * 2002-01-24 2005-12-20 The Texas A&M University System Developing the texture of a material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165845A (en) * 1988-12-19 1990-06-26 Daido Steel Co Ltd Method for producing single crystals of high melting point metals
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
WO2004024978A1 (en) * 2002-09-13 2004-03-25 Tosoh Smd, Inc. Non-planar sputter targets having crystallographic orientations promoting uniform deposition
WO2004064114A2 (en) * 2003-01-07 2004-07-29 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; December 1964 (1964-12-01), DUNN C G ET AL: "Development of a (110) preferred orientation in rolled and annealed high-purity tantalum", XP008054193, Database accession no. 1965A06342 *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 420 (M - 1023) 11 September 1990 (1990-09-11) *
POKROSS C: "CONTROLLING THE TEXTURE OF TANTALUM PLATE", JOM, THE SOCIETY, TMS, WARRENDALE, PA, US, vol. 41, no. 10, 1 October 1989 (1989-10-01), pages 46 - 49, XP000083914, ISSN: 1047-4838 *
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME USA, vol. 230, no. 7, 1 December 1964 (1964-12-01), pages 1567 - 1570 *

Also Published As

Publication number Publication date
WO2005071135A2 (en) 2005-08-04
US20050155677A1 (en) 2005-07-21

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