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WO2005062872A2 - Filtre photo-detecteur presentant un amplificateur a faible bruit en cascade - Google Patents

Filtre photo-detecteur presentant un amplificateur a faible bruit en cascade Download PDF

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Publication number
WO2005062872A2
WO2005062872A2 PCT/US2004/043024 US2004043024W WO2005062872A2 WO 2005062872 A2 WO2005062872 A2 WO 2005062872A2 US 2004043024 W US2004043024 W US 2004043024W WO 2005062872 A2 WO2005062872 A2 WO 2005062872A2
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WO
WIPO (PCT)
Prior art keywords
photo
detector array
detector
cascade
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/043024
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English (en)
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WO2005062872A3 (fr
Inventor
W. Daniel Hillis
Roderick A. Hyde
Nathan P. Myhrvold
Jr. Lowell L. Wood
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Searete LLC
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Searete LLC
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Filing date
Publication date
Priority claimed from US10/742,517 external-priority patent/US7053809B2/en
Priority claimed from US10/744,057 external-priority patent/US7053998B2/en
Priority claimed from US10/758,950 external-priority patent/US7250595B2/en
Application filed by Searete LLC filed Critical Searete LLC
Publication of WO2005062872A2 publication Critical patent/WO2005062872A2/fr
Anticipated expiration legal-status Critical
Publication of WO2005062872A3 publication Critical patent/WO2005062872A3/fr
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/08Continuously compensating for, or preventing, undesired influence of physical parameters of noise
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • G01J1/0407Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0418Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using attenuators
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/10Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/16Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
    • G01J1/18Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors using comparison with a reference electric value
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • G01J3/30Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36Investigating two or more bands of a spectrum by separate detectors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • H04N23/741Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • G01J1/0488Optical or mechanical part supplementary adjustable parts with spectral filtering
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12Analogue/digital converters
    • H03M1/34Analogue value compared with reference values
    • H03M1/38Analogue value compared with reference values sequentially only, e.g. successive approximation type
    • H03M1/44Sequential comparisons in series-connected stages with change in value of analogue signal

Definitions

  • the present application is related to, claims the earliest available effective filing date(s) from (e.g., claims earliest available priority dates for other than provisional patent applications; claims benefits under 35 USC ⁇ 119(e) for provisional patent applications), and incorporates by reference in its entirety all subject matter of the following listed application(s); the present application also claims the earliest available effective filing date(s) from, and also incorporates by reference in its entirety all subject matter of any and all parent, grandparent, great-grandparent, etc. applications of the following listed application(s):
  • TECHNICAL FIELD The present application relates, in general, to photo-detector systems.
  • a system includes but is not limited to: a first photo-detector array configured to obstruct a first predefined portion of at least one defined wavelength of light impinging upon said first photo-detector array; a second photo-detector array sensitive to the at least one defined wavelength of light, said second photo-detector array positioned proximate to said first photo-detector array; and at least one cascade of N gain elements operably couplable with at least one of said first photo-detector array and said second photo-detector array, the at least one cascade having at least (i) N greater than or equal to a positive integer sufficient to provide said at least one cascade with a gain such that a predetermined operable signal at an input of said at least one cascade generates a signal at an output of said at least one cascade that is larger than a predetermined operable threshold value, (ii) an input of a first gain element of said at least one cascade operably couplable
  • a method of constructing a system includes but is not limited to : forming a first photo-detector array configured to obstruct a first predefined portion of at least one defined wavelength of light impinging thereupon; forming a second photo- detector array sensitive to the at least one defined wavelength of light in a vicinity of the first photo-detector array; configuring a first gain element such that an input of the first gain element is operable to receive an input signal from at least one of the first photo- detector array and the second photo-detector array; connecting an output of a k'th gain element to an input of a k+l'th gain element, wherein lc is an integer that is at least 1 ; configuring an 'th gain element of a cascade of N gain elements such that an output of the N'th gain element is operable to generate an output signal; and N being a positive integer such that a ratio between the output signal and the input signal is larger than a predetermined threshold gain when the input signal is received at
  • a method of detecting light includes but is not limited to: obstructing a first predefined portion of at least one defined wavelength of light incident upon a first photo-detector array; detecting the at least one defined wavelength of light with a photo- detector in a second photo-detector array; and receiving at least one signal representative of the least one defined wavelength of light with at least one cascade of N gain elements operably coupled with at least one of the first photo-detector array and the second photo- detector array, the at least one cascade having at least (ii) N greater than or equal to a positive integer sufficient to provide said at least one cascade with a gain such that a predetermined operable signal at an input of said at least one cascade generates a signal at an output of said at least one cascade that is larger than a predetermined operable threshold value, (ii) an input of a first gain element of said at least one cascade operably couplable with the at least one of the first photo-detector array and the second photo-
  • related systems include but are not limited to circuitry and/or prograrrrming for effecting the method aspects described in the text and/or drawings of the present application; the circuitry and/or programming can be virtually any combination of hardware, software, and/or firmware configured to effect the foregoing-referenced method aspects depending upon the design choices of the system designer.
  • Figure 1 shows structure 100 that includes photo-detector arrays 102, 104, and 106.
  • Figure 2 depicts system 200 that includes the subject matter shown in Figure 1.
  • Figure 3 depicts system 200 that includes the subject matter shown in Figure 1.
  • Figure 4 shows structure 400 that constitutes an alternate implementation of structure 100.
  • Figure 5 depicts a partial view of system 500, which is similar to system 200 of Figure 2 except modified as shown and described herein.
  • Figure 6 shows the structure of Figure 5, modified to provide analog-to-digital converters.
  • Figure 7 illustrates a break out view of an alternate implementation of lower cascade 170 fed by bucket 110 as depicted in Figure 6.
  • Figure 8 shows an alternative embodiment of the structures of Figure 6 wherein the resistors have been replaced by capacitances.
  • Figure 9 shows an alternative embodiment of the structures of Figure 7 wherein the resistors have been replaced by capacitances.
  • structure 100 that includes photo-detector arrays 102, 104, and 106.
  • Example implementations of photo-detector arrays 102, 104, and 106 include but are not limited to charge coupled device (CCD) sensor arrays, complementary metal oxide semiconductor (CMOS) sensor arrays, and/or mixtures of CCD and CMOS arrays.
  • CCD charge coupled device
  • CMOS complementary metal oxide semiconductor
  • CMOS complementary metal oxide semiconductor
  • Photon groups 107, 109, and 112 are depicted as respectively impinging upon photo-detectors 114, 116, and 118 of photo-detector array 102.
  • Photo-detector array 102 is depicted as configured to obstruct a predefined portion of at least one defined wavelength of light impinging upon photo-detector array 102.
  • photo-detectors 114, 116, and 118 of photo-detector array 102 are illustrated as obstructing 1/2, or 50%, of the photons of photon groups 107, 109, and 112 impinging upon photo-detector array 102.
  • Unobstructed portions 120, 122, and 124 of photon groups 107, 109, and 112, respectively, are shown impinging upon photo-detectors 126, 128, and 130 of photo- detector array 104.
  • Photo-detector array 104 is depicted as configured to obstruct a predefined portion of at least one defined wavelength of light impinging upon photo- detector array 104.
  • photo-detectors 126, 128, and 130 of photo- detector array 104 are illustrated as obstructing 1/2, or 50%, of the photons of portions 120, 122, and 124 of light impinging upon photo-detector array 104.
  • Photo-detector array 106 is depicted as configured to obstruct a predefined portion of at least one defined wavelength of light impinging upon photo- detector detector array 106.
  • photo-detectors 138, 140, and 142 of photo-detector array 106 are illustrated as obstructing 1/2, or 50%, of the photons of portions 132, 134, and 136 impinging upon photo-detector array 106 (the single photon that would emerge from photo-detector 138 is not shown for sake of clarity of presentation).
  • system 200 that includes the subject matter shown in Figure 1.
  • System 200 may form an environment for a process that serves to illustrate a few of the advantages of structure 100.
  • structure 100 will allow an image to be gathered that exceeds the saturation point of the photo-detectors of uppermost photo-detector array 102.
  • the example of Figure 2 shows that intensity at photo-detector array 102 can be inferred beyond the dynamic range of photo-detector array 102.
  • Charge detectors 238, 226, and 214 are shown as coupled to detect the charge in photo-detectors 138, 126, and 114, respectively.
  • Brightness inference units 2380, 2260, and 2140 are shown as coupled to calculate the intensity indicated by charge detectors 238, 226, and 214, respectively.
  • Charge detector 238 is depicted as coupled to detect the charge in photo-detector 138.
  • Charge detector 238 is further shown as coupled to brightness inference unit 2380.
  • Brightness inference unit 2380 has knowledge of photo-detector 106's relative place in the stack and the predetermined light obstruction/unobstruction characteristics of the photo-detectors in the stack above photo-detector 106. Accordingly, brightness inference unit 2380 can calculate a likely intensity of photon- group 107 impinging on uppermost photo -detector array 102.
  • photo-detector 126 of photo-detector array 104 is known to obstruct 1/2 , or 50%, of its incident photons — coupled with the information from charge detector 238 that 2 photons have impinged upon photo-detector 138 - allows brightness inference unit 2380 to calculate that approximately four photons were incident upon photo-detector 126.
  • Brightness inference unit 2380 can thereafter use this 4-photon inference coupled with the fact that photo- detector 114 of photo-detector array 102 is known to obstruct 1/2, or 50%, of its incident photons to calculate that approximately 8 photons were incident upon photo-detector 114.
  • Charge detector 226 and brightness inference unit 2260 are depicted as working in a fashion similar to charge detector 238 and brightness inference unit 2380 to calculate that the 4 photons received by photo-detector 126 indicate that approximately 8 photons were received by photo-detector 114.
  • Charge detector 214 and brightness inference unit 2140 are illustrated as working in a fashion similar to charge detector 238 and brightness inference unit 2380 to calculate that the 8 photons received by photo-detector 114 indicate that approximately 6 photons were received by photo-detector 114, since photo-detector 114 - for sake of example — is assumed to saturate at 6 photons.
  • Brightness inference selection unit 2500 is shown as coupled to receive the results of brightness inference units 2380, 2260, and 2140. Brightness inference selection unit 2500 runs various selection routines to determine which of brightness inference units 2380, 2260, and 2140 are likely most accurate. Continuing with the present example, brightness inference selection unit 2500 would note that brightness inference unit 2140's calculation was at the threshold saturation point of photo-detector 114, and would mark that calculation as suspect. Thereafter, brightness inference selection unit 2500 would note that brightness inference unit 2260's and 2380's calculations were above the threshold saturation point of photo-detector 114.
  • brightness inference selection unit 2500 would average brightness inference unit 2260's and 2380's calculations (ignoring brightness inference unit 2140's at-threshold calculation) to get a brightness inference of 8 photons.
  • Brightness inference selection unit 2500 is depicted as coupled to conventional display circuitry 2502.
  • Conventional display circuitry 2502 typically expects to receive one of a number of discrete signals indicative of pixel brightness (what those signals are constitutes a conventional design choice).
  • brightness inference selection unit 2500 generates a signal indicative of 8 photon brightness and delivers that signal over to conventional display circuitry 2502, which then uses the signal in a conventional fashion to produce an image representation.
  • System 200 may form an environment for a process that serves to illustrate of few of the advantages of structure 100.
  • shown following is that, in the event that photon group 109 is such that there is "quantization error" introduced by the filtering photo-detectors, the fact that there are multiple layers of filters allows system 200 to increase the likelihood that such "quantization errors" can be corrected.
  • Charge detector 340 is depicted as coupled to detect the charge in photo-detector 140.
  • Charge detector 340 is further shown as coupled to brightness inference unit 3400.
  • Brightness inference unit 3400 has knowledge of photo-detector array 106's (e.g., photo- detector 140 's) relative place in the stack and the predetermined light obstruction/unobstruction characteristics of the photo-detectors in the stack above photo- detector array 106 (photo-detector 140). Accordingly, brightness inference unit 3400 can calculate a likely intensity of photon-group 109 impinging on uppermost photo-detector array 102.
  • photo-detector 128 of photo-detector array 104 is known to obstruct 1/2 , or 50%, of its incident photons ⁇ coupled with the information from charge detector 340 that 1 photon has impinged upon photo-detector 140 — allows brightness inference unit 3400 to calculate that approximately 2 photons were incident upon photo-detector 128; unfortunately, since the 1 photon impinging upon photo-detector 140 is the result of photo-detector 128 filtering 50% of 3 photons, there is quantization error in the filtering which makes this calculated intensity of the light at photo-detector array 104 less accurate than without the quantization error.
  • Brightness inference unit 3400 can thereafter use this 2-photon inference coupled with the fact that photo-detector 116 of photo-detector array 102 is known to obstruct 1/2, or 50%, of its incident photons to calculate that approximately 4 photons were incident upon photo- detector 116.
  • Charge detector 328 and brightness inference unit 3280 are depicted as working in a fashion similar to charge detector 340 and brightness inference unit 3400.
  • Brightness inference unit 3280 has knowledge of photo-detector array 104's (e.g., photo-detector 128's) relative place in the stack and the predetermined light obstructionunobstruction characteristics of the photo-detector in the stack above photo-detector 104 (e.g., photo- detector 128). Accordingly, brightness inference unit 3280 can calculate a likely intensity of photon- group 109 impinging on uppermost photo-detector array 102.
  • photo-detector 116 of photo-detector array 102 is known to obstruct 1/2 , or 50%, of the photons, coupled with the information from charge detector 328 that 3 photons have impinged upon photo-detector 128 allows brightness inference unit 3280 to calculate that approximately 6 photons were incident upon photo-detector 116.
  • Brightness inference unit 3280 can thereafter use this 6-photon inference coupled with the fact that photo-detector 116 of photo-detector array 102 is known to obstruct 1/2, or 50%>, of the photons to calculate that approximately 6 photons were incident upon photo-detector 116.
  • Charge detector 316 and brightness inference unit 3160 are illustrated as working in a fashion similar to charge detector 340 and brightness inference unit 3400 to calculate that the 6 photons received by photo-detector 116 indicate that approximately 6 photons were received by photo-detector 116.
  • Brightness inference selection unit 2500 is shown as coupled to receive the results of brightness inference units 3400, 3280, and 3160. Brightness inference selection unit 2500 runs various selection routines to determine which of brightness mference units 3400, 3280, and 3160 are likely most accurate. Continuing with the present example, brightness inference selection unit 2500 would note that brightness inference unit 3160's calculation was at the threshold saturation point of photo-detector 114, and would mark that calculation as suspect. Thereafter, brightness inference selection unit 2500 would note that brightness inference unit 3280's and 3400's calculations do not agree.
  • brightness inference selection unit 2500 would detect that brightness inference unit 3280's calculation matched brightness inference unit 3160's calculation, even though brightness inference unit 3160's calculation shows a threshold saturation value; accordingly, brightness inference selection unit would treat brightness inference unit 3160's calculation as accurate and then average all three calculations of brightness inference units 3400, 3280, and 3160 (e.g., (4 + 6 + 6)/3 - 5.33) to select a brightness inference of 6 photons as most likely; alternatively, the fact that brightness inference unit 3280 makes its threshold inference based on more collected charge (e.g., as indicated by charge detector 328) than the charge collected by lowermost brightness inference unit 3400 could be used to decide that brightness inference unit 3280's calculation was the more accurate.
  • charge detector 328 charge detector 328
  • Photo-detector arrays 102, 104, 106 have been described herein as configured to obstruct predefined portions of at least one defined wavelength of light impinging upon photo-detector arrays 102, 104, 106. There are many different ways in which such photo- detector arrays may be implemented. In some implementations of the photo-detector arrays, at least one photo -detector is constructed to provide an optical filter having a passband including at least one of a red, a blue, and a green visible light wavelength. Exemplary implementations include photo-detectors constructed to filter red, blue, and green visible light wavelengths either individually or in some combination thereof. Other exemplary implementations include photo-detectors constructed to filter 400 through 800 nm wavelengths of light either individually or in some combination thereof.
  • At least one photo-detector is constructed to provide a substantially neutral density filter (neutral density filters attenuate incident light without significantly altering its spectral distribution over a defined group of wavelengths of interest).
  • one or more photo-detectors are constructed to provide a neutral density filter that decreases an intensity of light energy without substantially altering a relative spectral distribution of an unobstructed portion of the light energy.
  • one or more photo-detectors are constructed to provide a substantially neutral density filter that filters an entire visible spectrum substantially evenly without substantially influencing at least one of color and contrast of an unobstructed portion of the entire visible spectrum.
  • one or more photo-detectors are constructed to provide a substantially neutral density filter that utilizes at least one of absorption and reflection. In another exemplary implementation, one or more photo-detectors are constructed to provide a substantially neutral density filter that filters substantially Vi of the light impinging upon the photo-detectors. In another exemplary implementation, one or more photo-detectors are constructed to provide a substantially neutral density filter that filters a defined portion of photons at least partially composing the light impinging upon said first photo-detector.
  • the examples herein are not intended to be exhaustive, and those having skill in the art may substitute other types of photo-detector arrays in view of the teachings herein with a reasonable amount of experimentation.
  • Spectrally dependent filter 402 is depicted interposed between photo-detector array 102 and photo-detector array 104.
  • spectrally-dependent filter 402 can be either monolithic (as shown in Figure 4), or can be spatially differentiated using either the same pixilation pattern as in photo-detector arrays 102 or 104, or using a different pattern.
  • structure 400 is intended to be representative of its shown components repeated many times, and is also intended to be representative of a composite of structures 100 of Figure 1 and structure 400 of Figure 4.
  • spectrally dependent filter 402 can be depicted interposed between photo -detector array 102 and photo-detector array 104.
  • Spectrally dependent filter 402 is used to equalize the filtering of photo-detector array 102 so that the various wavelengths of portions 120, 122, and 124 have been like filtered prior to impinging upon photo-detector 104.
  • photo-detector array 102 will not provide a true neutral density filter function across red, blue, and green wavelength light.
  • spectrally-dependent filter 402 would provide an additional green filter so that the red, blue, and green light were all filtered approximately 50% when they reached photo- detector 104.
  • spectrally dependent filter 402 can be designed to attenuate at least one first wavelength (e.g., blue light) substantially more than at least one second wavelength (e.g., red light).
  • first wavelength e.g., blue light
  • second wavelength e.g., red light
  • spectrally-dependent filter 402 is constructed to filter at least one defined wavelength of light between about 400 and about 800 nano-meters.
  • photo-detector arrays proximate to each other are constructed of different semi-conductor materials.
  • spectrally-dependent filter 402 is made from a semi-conductor material that is the same as the material used in at least one of the first and second photo-detector arrays, the semiconductor material having at least one of a doping material and a concentration chosen to meet a predefined amount of optical obstruction; in an alternate implementation, the material is different from that of a photo-detector array proximate to spectrally-dependent filter 402.
  • spectrally-dependent filter 402 provides its filtering/obstruction properties via at least one of absorption and reflection mechanisms.
  • spectrally-dependent filter 402 provides an amount of obstruction substantially different for at least one second defined wavelength of light than for the at least one defined wavelength of light which photo-detector array 102 has been configured to obstruct.
  • spectrally-dependent filter 402 provides an amount of obstruction substantially the same for a defined set of wavelengths, the set containing the first defined wavelength of light.
  • At least one photo-detector in a photo-detector array substantially matches at least one of the size, shape, and lateral location of at least one photo-detector in another photo-detector array.
  • At least one photo-detector in one photo-detector array is in respective substantial alignment with a plurality of photo- detectors in another photo-detector array.
  • the photo-detector arrays are each permeable to a first and a second defined wavelength of light.
  • structure 400 contains a set of N+l photo-detector arrays, each pair of which is proximate to and separated by an optical filter, such that relative optical spectrums entering N of the photo-detector arrays are substantially different from each other, and such that a relative optical spectrum entering photo-detector array N+l has a substantially similar relative spectrum as that relative spectrum entering the first photo-detector array.
  • FIG. 5 depicted is a partial view of system 500, which is similar to system 200 of Figure 2 except modified as shown and described herein. Cascades of N gain elements are shown respectively interposed between charge detectors 214, 226, and 238 and photo-detectors 114, 126, and 138. Although only three charge detector-photo-detector pairings are explicitly described herein, it is to be understood that in typical applications an appreciable portion of respectively paired charge detectors and photo-detectors will have cascades of similarly interposed gain elements!
  • Photo-detector arrays 102, 104, and 106 are illustrated as having individual photo- detectors arranged in a row and column format. Those having sldll in the art will appreciate that photo-detector arrays 102, 104, and 106 are meant to be inclusive of substantially all suitable photo-detector arrays, including but not limited to Vertical, Linear, Interline, Full-frame, and Frame-transfer arrays.
  • charge detectors 214, 226, and 238 detect the aggregate charges of their respectively connected photo-detectors 114, 126, and 138.
  • Each individual photo-detector 114, 126, and 138 typically collects charges generated by incident photons over a defined interval (e.g., an exposure time interval).
  • each photo-detector is described herein as collecting "buckets" of charge Q, where the buckets of charge are representative of light received during an interval.
  • Different buckets 108 and 110 of aggregate charge QA and QB are illustrated as having been generated by photo-detectors 114 and 138 where each bucket 108 and 110 represents the aggregate charge "Q" respectively collected by photo-detectors 114 and 138 over some period of time (e.g., an exposure time).
  • each bucket 108, 110 contains an aggregate charge collected over time is depicted by the lowercase “q”s making up the uppercase “QA” and “QB” in buckets 108 and 110. Buckets 108 and 110 will typically contain different amounts of charge.
  • cascades 150 and 170 are each shown having N gain elements, such is not required.
  • the number N is preferably chosen to be greater than or equal to a positive integer sufficient to provide cascade 170 with a gain such that a predetermined operable signal at an input of cascade 170 generates a signal at an output of cascade 170 that is larger than a predetermined operable threshold value. In one implementation, this is achieved by choosing N such that when an output of photo- detector 138 is at or near the lower end of photo-detector 138's operable range the overall gain of cascade 170 will be large enough to provide charge detector 238 with a signal at or above charge detector 238 's operable range lower end.
  • the gain elements of cascade 170 preferably have a gain larger than one by an amount such that the noise factor of cascade 170 operating on the predetermined signal at the input of the at least one cascade 170 is substantially minimized (e.g., having a noise factor at or near one, such as a noise factor less than 1.1 or 1.2).
  • the noise factor may be viewed.
  • the noise factor may be viewed as the ratio of a Signal Power to Thermal Noise ratio at the input_of the at least one cascade to an amplified Signal Power to Thermal Noise ratio at the output of the at least one cascade: (Sinput Ninput)/(S 0 utput/N O utput)-
  • the noise factor may be viewed as a ratio of an output noise power of the at least one cascade to the portion thereof attributable to thermal noise in an input termination at standard noise temperature.
  • the noise factor may be viewed as a ratio of actual output noise to that which would remain if the at least one cascade itself did not introduce noise.
  • the gains of the gain elements in cascade 170 are chosen larger than one by an amount that is practicably small such that the noise contribution to the low noise amplifier from a gain element is substantially minimized.
  • the N gain elements are preferably chosen to be very low gain amplifiers (e.g., gains greater than 1.00 (one) but less than 1.01 (one point zero one) or 1.001 (one point zero zero one) that produce very little additive noise.
  • very low gain amplifiers e.g., gains greater than 1.00 (one) but less than 1.01 (one point zero one) or 1.001 (one point zero zero one) that produce very little additive noise.
  • One example of such extremely low gain amplifiers that produce little additive noise are slightly over- biased amplifiers.
  • the N gain elements are preferably chosen to include one or more impact ionization-based amplifiers, such as those used in the Texas Instruments rMPACTRON CCDs (available from Texas Instruments Inc., Richardson, Texas, USA) or those used in the Marconi L3 Vision CCDs (available from Marconi Applied Technology, United Kingdom).
  • Such amplifiers can use a signal-boosting technique that may effectively reduce CCD read-out noise by a gain factor.
  • Impact-ionization based amplifiers preferably use special high-voltage clocking which can both initiate and then sustain an impact ionization process.
  • bucket 110 of charge can be multiplied such that greatly improved signal- to-noise ratio for signal levels in the vicinity of the photo-detector 138 read-noise floor may be achieved.
  • the N gain elements are preferably chosen to include one or more low noise operational amplifiers.
  • FIG. 6 shown is the structure of Figure 5, modified to provide analog-to-digital converters.
  • Cascade 150 fed by bucket 108 of aggregate charge QA is shown having P attached voltage comparators.
  • the inputs of gain elements having the attached comparators are also shown as having resistors connected to ground. These resistors are preferably large so as to draw as little current as is practicable.
  • Each comparator is illustrated as having its own respective reference voltage depicted as reference voltage _1 through reference voltage_P.
  • the respective comparators trigger when the voltages across their respective resistors exceed their respective reference voltages.
  • current comparators are used to directly sense the current.
  • Each comparator 1-P is depicted as having an output to charge detector 214.
  • Charge detector 214 is shown as using the quantized output of the various comparators 1- P to augment the amplified value received from cascade 150 of gain elements.
  • the comparators 1-P are such that charge detector 214 may use the quantized output to provide a direct quantization and/or digital conversion; these alternate implementations are depicted in Figure 6 by the dashed line connecting the Nth gain element with charge detector 214, and are also shown and described further herein.
  • Cascade 170 fed by bucket 110 of aggregate charge QB is shown having M attached comparators.
  • the inputs of gain elements having the attached comparators are also shown as having resistors connected to ground. These resistors are preferably large so as to draw as little current as is practicable.
  • Each comparator is illustrated as having its own respective reference voltage depicted as reference voltage _1 through reference voltage_M. The respective comparators will trigger when the voltages across their respective resistors exceed their respective reference voltages. In another embodiment (not shown) current comparators are used to directly sense the current.
  • Each comparator 1-M is depicted as having an output to charge detector 238.
  • Charge detector 238 is shown as using the quantized output of the various comparators 1- M to augment the amplified value received from cascade 170 of gain elements.
  • the comparators 1-M are such that charge detector 238 may use the quantized output to provide a direct quantization and/or digital conversion; these alternate implementations are depicted in Figure 6 by the dashed line connecting the Nth gain element with charge detector 238, and are also shown and described further herein.
  • Figure 6 and concentrating on cascade 170 fed by bucket 110, notice that since the N gain elements are cascaded, the signal will be less amplified near the first gain element and more amplified near the Nth gain element.
  • the comparator that triggered closest to the 1 st gain element would be indicative of the amount of charge, QB, input to cascade 170.
  • the second comparator, with reference voltage__2 triggered, but the first comparator with reference voltage_l did not, the known gains of the stages could be used to infer the amount of charge QB.
  • QB can be further quantized and/or digitized by charge detector 238 using conventional techniques.
  • the comparators and resistors can be distributed for yet more precision (e.g., 1 for every gain element).
  • the comparators and resistors can be distributed and the voltage reference levels manipulated in tight of specified discrete changes in the amount of charge QB, thereby allowing the output of the comparators to function as direct digital output values.
  • FIG 7 illustrated is a break out view of an alternate implementation of lower cascade 170 fed by bucket 110 as depicted in Figure 6. Specifically, each of the resistors and comparators 1-M are shown respectively connected every 3 gain element. Comparators 1-M are depicted as connected to charge detector 238, while gain element ⁇ is shown as not connected to charge detector 238. Assuming that the gain elements all have roughly the same gain, in this implementation, charge detector 238 may directly use the comparator outputs to get direct digital conversion of the analog charge Q2 of bucket 110.
  • FIG 8 shown is an alternative embodiment of the structures of Figure 6 wherein the resistors have been replaced by capacitances.
  • One implementation in which the structures of Figure 8 prove useful is that wherein the time interval between successive buckets of charge clocked into cascade 170 of N gain elements is greater than the time needed for cascade 170 to effectively settle. That is, in a circuit where cascade 170 responds so fast that cascade 170 will have effectively completed its response to bucket 110 of charge QB long before a next bucket of charge is shifted onto the input of cascade 170. As cascade 170 settles in response to bucket 100 of charge QB, the capacitors associated with the respective comparators 1-M will gather charge and present voltage which can be monitored in a fashion analogous to that described above in relation to Figure 6. The remaining components of Figure 8 function analogous to like components described elsewhere herein.
  • FIG 9 shown is an alternative embodiment of the structures of Figure 7 wherein the resistors have been replaced by capacitances.
  • the structures of Figure 9 prove particularly useful in instances similar to those described in relation to Figure 8.
  • the components of Figure 9 function analogous to like components described elsewhere herein.
  • a signal bearing media include, but are not limited to, the following: recordable type media such as floppy disks, hard disk drives, CD ROMs, digital tape, and computer memory; and transmission type media such as digital and analog communication links using TDM or IP based communication links (e.g., packet links).
  • electro-mechanical system includes, but is not limited to, electrical circuitry operably coupled with a transducer (e.g., an actuator, a motor, a piezoelectric crystal, etc.), electrical circuitry having at least one discrete electrical circuit, electrical circuitry having at least one integrated circuit, electrical circuitry having at least one application specific integrated circuit, electrical circuitry forming a general purpose computing device configured by a computer program (e.g., a general purpose computer configured by a computer program which at least partially carries out processes and/or devices described herein, or a microprocessor configured by a computer program which at least partially carries out processes and/or devices described herein), electrical circuitry forming a memory device (e.g., forms of random access memory), electrical circuitry
  • a typical image processing system generally includes one or more of a system housing unit, a video display device, a memory such as volatile and non-volatile memory, processors such as microprocessors and digital signal processors, computational entities such as operating systems, drivers, and applications programs, one or more interaction devices, such as a touch pad or screen, control systems includmg feedback loops and control motors (e.g., feedback for sensing lens position and/or velocity; control motors for moving/ distorting lenses to give desired focuses.
  • a typical image processing system maybe implemented utilizing any suitable commercially available components, such as those typically found in digital still systems and/or digital motion systems.
  • any two components herein combined to achieve a particular functionality can be seen as “associated with” each other such that the desired functionality is achieved, irrespective of architectures or intermedial components.
  • any two components so associated can also be viewed as being “operably connected” or “operably coupled” to each other to achieve the desired functionality.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
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Abstract

L'invention concerne un procédé et des systèmes concernant l'obstruction d'une première partie définie par au moins une longueur d'ondes définie d'un éclairage incident sur un premier réseau photo-détecteur ; et la détection de la longueur d'onde définie de l'éclairage au moyen d'un photo-détecteur dans un second réseau photo-détecteur.
PCT/US2004/043024 2003-12-19 2004-12-20 Filtre photo-detecteur presentant un amplificateur a faible bruit en cascade Ceased WO2005062872A2 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10/742,517 2003-12-19
US10/742,517 US7053809B2 (en) 2003-12-19 2003-12-19 Analog-to-digital converter circuitry having a cascade
US10/744,057 US7053998B2 (en) 2003-12-22 2003-12-22 Photo-detector filter
US10/744,057 2003-12-22
US10/758,950 US7250595B2 (en) 2004-01-14 2004-01-14 Photo-detector filter having a cascaded low noise amplifier
US10/758,950 2004-01-14

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WO2005062872A2 true WO2005062872A2 (fr) 2005-07-14
WO2005062872A3 WO2005062872A3 (fr) 2007-05-24

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US5864146A (en) * 1996-11-13 1999-01-26 University Of Massachusetts Medical Center System for quantitative radiographic imaging
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