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WO2005054914A3 - Dispositif optoelectronique comprenant un filtre interferentiel - Google Patents

Dispositif optoelectronique comprenant un filtre interferentiel Download PDF

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Publication number
WO2005054914A3
WO2005054914A3 PCT/EP2004/013583 EP2004013583W WO2005054914A3 WO 2005054914 A3 WO2005054914 A3 WO 2005054914A3 EP 2004013583 W EP2004013583 W EP 2004013583W WO 2005054914 A3 WO2005054914 A3 WO 2005054914A3
Authority
WO
WIPO (PCT)
Prior art keywords
cavities
optical
optoelectronic devices
transparent
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2004/013583
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English (en)
Other versions
WO2005054914A2 (fr
Inventor
Vitaly Alexandrovich Shchukin
Nikolai Nikolaevich Ledentsov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NL Nanosemiconductor GmbH
Original Assignee
NL Nanosemiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NL Nanosemiconductor GmbH filed Critical NL Nanosemiconductor GmbH
Publication of WO2005054914A2 publication Critical patent/WO2005054914A2/fr
Publication of WO2005054914A3 publication Critical patent/WO2005054914A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Filters (AREA)

Abstract

Une nouvelle classe de dispositifs optoélectroniques comprend un filtre interférentiel. Ce filtre comprend au moins deux cavités optiques renfermant au moins un mode optique. Les modes optiques localisés dans les deux cavités sont en résonance seulement à une ou peu de longueurs d'ondes sélectives discrètes. En résonance, les modes propres optiques contiennent un mode possédant une intensité nulle en une position de noeud entre les deux cavités, cette position se décalant en fonction de la longueur d'onde. Un élément non transparent, de préférence un élément absorbant, un diffuseur ou un réflecteur est placé entre les deux cavités. A une longueur d'onde discrète sélective, lorsque le noeud optique coïncide avec l'élément non transparent, le filtre est transparent à la lumière. A d'autres longueurs d'onde, le filtre n'est pas transparent à la lumière. Cela permet la construction de divers dispositifs optoélectroniques fonctionnant de manière fortement sélective de la longueur d'onde.
PCT/EP2004/013583 2003-12-01 2004-11-30 Dispositif optoelectronique comprenant un filtre interferentiel Ceased WO2005054914A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US52640903P 2003-12-01 2003-12-01
US60/526,409 2003-12-01
US57753704P 2004-06-07 2004-06-07
US60/577,537 2004-06-07

Publications (2)

Publication Number Publication Date
WO2005054914A2 WO2005054914A2 (fr) 2005-06-16
WO2005054914A3 true WO2005054914A3 (fr) 2005-08-04

Family

ID=34657218

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/013583 Ceased WO2005054914A2 (fr) 2003-12-01 2004-11-30 Dispositif optoelectronique comprenant un filtre interferentiel

Country Status (3)

Country Link
US (1) US20050117623A1 (fr)
TW (1) TW200524236A (fr)
WO (1) WO2005054914A2 (fr)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI289708B (en) 2002-12-25 2007-11-11 Qualcomm Mems Technologies Inc Optical interference type color display
US7342705B2 (en) 2004-02-03 2008-03-11 Idc, Llc Spatial light modulator with integrated optical compensation structure
US7855824B2 (en) * 2004-03-06 2010-12-21 Qualcomm Mems Technologies, Inc. Method and system for color optimization in a display
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7564612B2 (en) 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US7630119B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7527995B2 (en) * 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US7304784B2 (en) * 2004-09-27 2007-12-04 Idc, Llc Reflective display device having viewable display on both sides
US7911428B2 (en) 2004-09-27 2011-03-22 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7372613B2 (en) 2004-09-27 2008-05-13 Idc, Llc Method and device for multistate interferometric light modulation
US7289259B2 (en) 2004-09-27 2007-10-30 Idc, Llc Conductive bus structure for interferometric modulator array
US7898521B2 (en) 2004-09-27 2011-03-01 Qualcomm Mems Technologies, Inc. Device and method for wavelength filtering
US8362987B2 (en) 2004-09-27 2013-01-29 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7807488B2 (en) * 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. Display element having filter material diffused in a substrate of the display element
US7420725B2 (en) 2004-09-27 2008-09-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7710632B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Display device having an array of spatial light modulators with integrated color filters
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US7928928B2 (en) 2004-09-27 2011-04-19 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing perceived color shift
US7391800B2 (en) * 2005-02-02 2008-06-24 Ricoh Company, Ltd. Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7550810B2 (en) * 2006-02-23 2009-06-23 Qualcomm Mems Technologies, Inc. MEMS device having a layer movable at asymmetric rates
JP4533339B2 (ja) 2006-04-12 2010-09-01 キヤノン株式会社 面発光レーザ
US8004743B2 (en) 2006-04-21 2011-08-23 Qualcomm Mems Technologies, Inc. Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display
US7339969B2 (en) * 2006-05-05 2008-03-04 Optical Communication Products, Inc. Refined mirror structure for reducing the effect of feedback on a VCSEL
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
RU2452067C2 (ru) * 2006-06-16 2012-05-27 Российское общество с ограниченной ответственностью "Коннектор Оптикс" Оптоэлектронное устройство для высокоскоростной передачи данных, основанное на сдвиге края стоп-зоны распределенного брэгговского отражателя за счет электрооптического эффекта
US7527998B2 (en) 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
CN103558686B (zh) 2006-10-06 2017-03-01 追踪有限公司 集成于显示器的照明设备中的光学损失结构
WO2008045207A2 (fr) 2006-10-06 2008-04-17 Qualcomm Mems Technologies, Inc. Guide de lumière
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
US7643202B2 (en) 2007-05-09 2010-01-05 Qualcomm Mems Technologies, Inc. Microelectromechanical system having a dielectric movable membrane and a mirror
US7630121B2 (en) 2007-07-02 2009-12-08 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
EP2183623A1 (fr) 2007-07-31 2010-05-12 Qualcomm Mems Technologies, Inc. Dispositifs pour accentuer la variation de couleur des modulateurs interférométriques
CN101802678B (zh) * 2007-09-17 2014-03-12 高通Mems科技公司 半透明/透射反射型发光干涉式调制器装置
JP4709259B2 (ja) * 2007-10-12 2011-06-22 キヤノン株式会社 面発光レーザ
KR20100090257A (ko) * 2007-10-19 2010-08-13 퀄컴 엠이엠스 테크놀로지스, 인크. 광기전력 소자가 통합된 디스플레이
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
WO2009055393A1 (fr) 2007-10-23 2009-04-30 Qualcomm Mems Technologies, Inc. Dispositifs basés sur des mems présentant des propriétés de transmission réglables
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US8068710B2 (en) 2007-12-07 2011-11-29 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
WO2009079279A2 (fr) * 2007-12-17 2009-06-25 Qualcomm Mems Technologies, Inc. Dispositifs photovoltaïques ayant des masques interférométriques sur le côté arrière
US8164821B2 (en) * 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
JP5171318B2 (ja) * 2008-03-05 2013-03-27 キヤノン株式会社 面発光レーザアレイ
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7612933B2 (en) 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US20100096011A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. High efficiency interferometric color filters for photovoltaic modules
WO2010044901A1 (fr) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Cellule photovoltaïque à couleur améliorée par modulateur interférométrique monolithique
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
JP5442113B2 (ja) 2009-05-29 2014-03-12 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 照明デバイスおよび該照明デバイスの製造方法
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US20110169724A1 (en) * 2010-01-08 2011-07-14 Qualcomm Mems Technologies, Inc. Interferometric pixel with patterned mechanical layer
EP2556403A1 (fr) 2010-04-09 2013-02-13 Qualcomm Mems Technologies, Inc. Couche mécanique d'un dispositif électromécanique et ses procédés de formation
US8848294B2 (en) 2010-05-20 2014-09-30 Qualcomm Mems Technologies, Inc. Method and structure capable of changing color saturation
JP2013544370A (ja) 2010-08-17 2013-12-12 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 干渉ディスプレイデバイスの電荷中性電極の作動及び較正
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
CN102570301B (zh) * 2010-12-30 2013-06-05 北京工业大学 双片集成可调谐垂直腔面发射激光器结构及制备方法
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
KR101941170B1 (ko) * 2011-12-12 2019-01-23 삼성전자주식회사 다중 패브리-페로 공진 모드와 다중 흡수 모드를 이용한 투과형 이미지 변조기
JP2013197200A (ja) * 2012-03-16 2013-09-30 Sumitomo Electric Device Innovations Inc 受光装置の制御方法及び通信制御方法
RU2507558C2 (ru) * 2012-05-03 2014-02-20 Федеральное бюджетное учреждение "3 Центральный научно-исследовательский институт Министерства обороны Российской Федерации" Электрооптическое устройство управления параметрами электрической цепи
CN102956734A (zh) * 2012-11-26 2013-03-06 中山市创科科研技术服务有限公司 一种可调透光率的多晶硅电池组件
KR101902928B1 (ko) * 2013-01-04 2018-10-02 삼성전자주식회사 3중 연결 양자우물 구조를 포함하는 광학 소자
JP6553019B2 (ja) * 2013-03-15 2019-07-31 プレビウム リサーチ インコーポレイテッド 広帯域可変掃引光源
DE102014014980A1 (de) * 2014-10-07 2016-04-07 Technische Universität Dresden Richtungsselektiver interferometrischer optischer Filter
US9812609B1 (en) * 2016-04-11 2017-11-07 X Development Llc Semiconductor device including oxide current aperture
CN107037534B (zh) * 2017-05-23 2019-08-30 深圳信息职业技术学院 可集成光电器件及其制作方法、多个光电器件的集成方法
KR102089293B1 (ko) * 2018-04-09 2020-03-16 아주대학교산학협력단 3차 공진 기반의 고색순도 구조색 컬러필터
US20200004100A1 (en) * 2018-06-29 2020-01-02 Viavi Solutions Inc. Optical devices with functional molecules
RU190371U1 (ru) * 2018-12-12 2019-06-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) Полупроводниковая гетероструктура для интегрального оптического модулятора рефрактивного типа на подложке inp

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215075A (en) * 1987-12-30 1989-09-13 British Telecomm Optical reflection filters
JPH06314846A (ja) * 1993-04-30 1994-11-08 Nec Corp 狭帯域化面発光レーザ
US6363093B1 (en) * 1998-12-29 2002-03-26 At&T Corp. Method and apparatus for a single-frequency laser
JP2003121637A (ja) * 2001-10-17 2003-04-23 Nippon Sheet Glass Co Ltd ファブリペローフィルタ
US20030152120A1 (en) * 2002-02-12 2003-08-14 Nikolai Ledentsov Tilted cavity semiconductor laser (TCSL) and method of making same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760292A (en) * 1970-12-22 1973-09-18 Bell Telephone Labor Inc Integrated feedback laser
US4740987A (en) * 1986-06-30 1988-04-26 American Telephone And Telegraph Company, At&T Bell Laboratories Distributed-feedback laser having enhanced mode selectivity
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US6392256B1 (en) * 1996-02-01 2002-05-21 Cielo Communications, Inc. Closely-spaced VCSEL and photodetector for applications requiring their independent operation
US6001664A (en) * 1996-02-01 1999-12-14 Cielo Communications, Inc. Method for making closely-spaced VCSEL and photodetector on a substrate
US5976905A (en) * 1996-02-16 1999-11-02 Cielo Communications, Inc. Method of manufacturing VCSEL arrays using vapor phase epitaxy to achieve uniform device-to-device operating characteristics
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US5757837A (en) * 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
DE19652528A1 (de) * 1996-12-17 1998-06-18 Siemens Ag LED mit allseitiger Lichtauskopplung
CA2242670A1 (fr) * 1997-07-14 1999-01-14 Mitel Semiconductor Ab Laser a cavite verticale et a emission par la surface a modulation par champ avec un pompage optique interne
US6154480A (en) * 1997-10-02 2000-11-28 Board Of Regents, The University Of Texas System Vertical-cavity laser and laser array incorporating guided-mode resonance effects and method for making the same
FR2796212B1 (fr) * 1999-07-07 2001-08-31 Commissariat Energie Atomique Dispositif optique a semiconducteur, a cavite resonante accordable en longueur d'onde, application a la modulation d'une intensite lumineuse
WO2001078204A1 (fr) * 2000-04-07 2001-10-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Cavite d'injection a pompage optique pour dispositifs a pompage optique
US6611539B2 (en) * 2001-05-29 2003-08-26 Nsc Nanosemiconductor Gmbh Wavelength-tunable vertical cavity surface emitting laser and method of making same
US7075954B2 (en) * 2001-05-29 2006-07-11 Nl Nanosemiconductor Gmbh Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US20050040410A1 (en) * 2002-02-12 2005-02-24 Nl-Nanosemiconductor Gmbh Tilted cavity semiconductor optoelectronic device and method of making same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215075A (en) * 1987-12-30 1989-09-13 British Telecomm Optical reflection filters
JPH06314846A (ja) * 1993-04-30 1994-11-08 Nec Corp 狭帯域化面発光レーザ
US6363093B1 (en) * 1998-12-29 2002-03-26 At&T Corp. Method and apparatus for a single-frequency laser
JP2003121637A (ja) * 2001-10-17 2003-04-23 Nippon Sheet Glass Co Ltd ファブリペローフィルタ
US20030152120A1 (en) * 2002-02-12 2003-08-14 Nikolai Ledentsov Tilted cavity semiconductor laser (TCSL) and method of making same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHEN GUOQIANG ET AL: "Angular filtering of spatial modes in a vertical-cavity surface-emitting laser by a Fabry–Perot étalon", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 74, no. 8, 22 February 1999 (1999-02-22), pages 1069 - 1071, XP012023285, ISSN: 0003-6951 *
KALLITEEVSKII M A: "COUPLED VERTICAL MICROCAVITIES", TECHNICAL PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 23, no. 2, February 1997 (1997-02-01), pages 120 - 121, XP000684756, ISSN: 1063-7850 *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 02 31 March 1995 (1995-03-31) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 08 6 August 2003 (2003-08-06) *

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