[go: up one dir, main page]

WO2004112157A1 - Composant luminescent semi-conducteur au nitrure iii possedant une electrode en treillis - Google Patents

Composant luminescent semi-conducteur au nitrure iii possedant une electrode en treillis Download PDF

Info

Publication number
WO2004112157A1
WO2004112157A1 PCT/KR2004/001318 KR2004001318W WO2004112157A1 WO 2004112157 A1 WO2004112157 A1 WO 2004112157A1 KR 2004001318 W KR2004001318 W KR 2004001318W WO 2004112157 A1 WO2004112157 A1 WO 2004112157A1
Authority
WO
WIPO (PCT)
Prior art keywords
ill
nitride semiconductor
electrode layer
mesh
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2004/001318
Other languages
English (en)
Inventor
Soo Kun Jeon
Chang Tae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
EpiValley Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
EpiValley Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd, EpiValley Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of WO2004112157A1 publication Critical patent/WO2004112157A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

Definitions

  • the present invention relates to a Ill-nitride semiconductor light-emitting device, and more particularly to a Ill-nitride semiconductor light-emitting device in which a mesh-type electrode is included to increase the external quantum efficiency of the device.
  • Ill-nitride semiconductor refers to Al x Gayln ⁇ -x .yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 , x + y ⁇ 1).
  • a semiconductor constituting a light-em ittingdevice has a h igher refractive i ndex than that of external e nvironment (epoxy or a ir layer)
  • most of photons formed by the recombination of electrons and holes remain within the device.
  • Such photons pass through various pathways, including thin films, a substrate and electrodes, before escaping out of the device, and thus, the external quantum efficiency of the device is reduced due to this photon absorption by the components.
  • the external quantum efficiency of the light-emitting device is much influenced by not only the structural shape of the l ight-emitting device b ut also the o ptical p roperties of materials constituting the light-emitting device.
  • a conductive film with a i given thickness is formed on most area of the p-type layer in order to efficiently spread an electric current through the p-type layer. Due to photon absorption by such a conductive film, the external quantum efficiency of the device is reduced. For high efficiency devices, not only conductivity for the uniform current spreading through the entire area but also transparency for high external quantum efficiency must be simultaneously satisfied. However, if the thickness of the conductive film is made thicker in order to increase its conductivity, there will be a problem in that the transparency of the conductive film cannot be ensured.
  • the thickness of the conductive film is made thinner in order to secure its transparency, its resistance becomes too large such that an electric current cannot be uniformly spread on the entire area. Furthermore, if the conductive film is formed on a device having a rough top surface in order to increase the external quantum efficiency of the device, there will be a problem in that the conductive film can be broken.
  • a conventional semi-transparent conductive film consists of Ni/Au-based materials with a thickness of several tens A to several hundreds A, and a photon absorption of about 20-30% occurs by this semi-transparent conductive film.
  • a n a ttempt to o vercome this p roblem
  • a m ethod w as p roposed b y which photon absorption by an conductive film is reduced using a mesh-type electrode with not only high reflectivity but also low contact resistance to p-type GaN, while light efficiently escapes from the portion of p-type GaN surface which is not covered by the mesh-type electrode
  • FIG. 1 is a schematic view illustrating a Ill-nitride semiconductor light-emitting device with a mesh-type electrode according to the prior art.
  • a buffer layer 12 is formed on the top surface of a substrate 11 , and a lower contact layer 13 made of an n-type Ill-nitride semiconductor is formed on the buffer layer 12.
  • an active layer 14 made of a Ill-nitride semiconductor is formed, an upper contact layer 15 made of a p-type Ill-nitride semiconductor is formed on the active layer 14.
  • a reflective film 50 may be formed.
  • a mesh-type electrode layer 17 is formed, and a bonding pad 16 is formed on the mesh-type electrode layer 17.
  • an ohmic contact layer 18 is formed on the exposed surface of the lower contact layer 13, which is not covered by the active layer 14.
  • the size of the mesh-type electrode must be limited. Namely, the minimum size of each opening in the mesh-type electrode must be 1/4 larger than the size of the wavelength of light being escaped, and the maximum size of each opening varies depending on the thickness of the p-type GaN l ayer, b ut must not exceed a bout 1 -4 ⁇ m if the thickness of the p-type
  • GaN layer is larger than 1 ⁇ m. Although the size of each opening needs to be large for the effective escape of light, the current spreading is not sufficiently made since it occurs through t he p-type GaN layer with low conductivity. Thus, in order that the current spreading is sufficiently made, the openings of the mesh-type electrode need to be made fine. However, if the openings are made fine as such, there will be a problem in that light emission to the outside is not sufficiently made, thus reducing the efficiency of the device.
  • the openings n eed to be made fine, but the formation of such a fine pattern causes a problem in the process of forming the mesh-type electrode and reduces the light emission efficiency of the device.
  • the p resent invention has b een m ade to s olve t he a bove-mentioned problems occurring in the prior art, and an object of the present invention is to a Ill-nitride semiconductor light-emitting device in which a mesh-type electrode is included in such a manner that effective current spreading occurs even when the sizes of the openings in the mesh-type electrode are somewhat large, thus increasing the external quantum efficiency of the device.
  • the present invention provides a Ill-nitride semiconductor light-emitting device, which comprises: a lower contact layer formed above the top surface of a substrate and made of an n-type Ill-nitride semiconductor; an active layer formed on a given region of the lower contact layer and made of a Ill-nitride semiconductor; an upper contact layer formed on the active layer and made of a p-type Ill-nitride semiconductor; a transparent electrode l ayer formed on the upper contact layer, the transparent electrode layer having a higher conductivity than that of the upper contact layer; a mesh-type electrode layer formed on the transparent electrode layer in such a manner that the transparent electrode layer is exposed through the openings of the mesh-type electrode layer; and an omhic contact layer formed on an exposed surface of the lower contact layer, which is not covered by the active layer.
  • the present i nvention provides a Ill-nitride semiconductor light-emitting device, which comprises: a lower contact layer formed above the top surface of a substrate and made of an n-type Ill-nitride semiconductor; an active layer formed on a given region of the lower contact layer and made of a Ill-nitride semiconductor; an upper contact layer formed on the active layer and made of a p-type Ill-nitride semiconductor; a mesh-type electrode layer formed on the upper contact layer i n such a m anner that the upper contact l ayer i s exposed through the openings of the mesh-type electrode layer; a transparent electrode layer formed on the mesh-type electrode layer such that it covers the mesh-type electrode layer, the transparent electrode layer having a higher conductivity than that of the upper contact layer; and an omhic contact layer formed on an exposed surface of the lower contact layer, which is not covered by the active layer.
  • the current spreading occurs mainly through the transparent electrode layer rather than the upper contact layer. For this reason, sufficient current spreading can be achieved even when the size of each opening is not small.
  • the present invention provides advantages in that the mesh-type electrode layer does not need to be finely formed as in the prior art, and thus, a portion covered by the mesh-type electrode layer is reduced, resulting in an increase in the external quantum efficiency of the device.
  • the size of each opening may be increased to larger than 4 ⁇ m, so that a complicated patterning process does not need to be carried out.
  • the transparent electrode layer needs to be formed thin in order to ensure its transparency, but a reduction in conductivity caused by this reduction in thickness can be overcome by the presence of the mesh-type electrode layer.
  • FIG. 1 is a schematic view illustrating a Ill-nitride semiconductor light-emitting device with a mesh-type electrode according to a prior art.
  • FIGs. 2 to 4 are drawings illustrating a Ill-nitride semiconductor light-emitting device according to a first embodiment of the present invention.
  • FIG. 5 is a schematic view illustrating a Ill-nitride semiconductor light-emitting d evice according to a s econd e mbodiment of the present
  • FIGS. 2 and 5 the same reference numerals as in FIG. 1 denote components having the same function as in FIG. 1 , and the explanation of the components will be omitted.
  • FIG. 2 is a schematic view illustrating a Ill-nitride semiconductor light-emitting device according to a first embodiment of the present invention.
  • the Ill-nitride semiconductor light-emitting device is characterized in that a transparent electrode layer 26 is formed on an upper contact layer 15 before a mesh-type electrode layer 27 is formed.
  • a transparent electrode layer 26 is formed on an upper contact layer 15 before a mesh-type electrode layer 27 is formed.
  • the n+ o r p+ Ill-nitride semiconductor layer 25 or the supper-lattice layer made of the n-or p-type Ill-nitride semiconductor material is interposed. Through the openings of the mesh-type electrode layer 27, the transparent electrode layer 26 is exposed.
  • the transparent electrode layer 26 and the mesh-type electrode layer 27 are made of either one selected from a group consisting of nickel, gold, silver, platinum, chromium, titanium, aluminum and rhodium, or a combination of two or more selected from a group consisting of nickel, gold, silver, platinum, chromium, titanium, aluminum and rhodium.
  • the openings of the mesh-type electrode layer 27 may have any shape, such as a circular, oval, rectangular, triangular or hexagonal shape.
  • the reflective layer 50 is made of either one selected from a group consisting of aluminum, silver, nickel, chromium, titanium and rhodium, or a combination of two or more selected from a group consisting of aluminum, silver, nickel, chromium, titanium and rhodium.
  • the reflective film 50 prevents light from escaping through the substrate 11 , thus improving the performance of the device.
  • the transparent electrode layer 26 preferably has such a high transparency that light emitted from the active layer 14 can easily escape to the outside.
  • the transparent electrode layer 26 must be able to uniformly supply an electric current to the entire area of the active layer 14. As the transparency of the transparent electrode layer 26 increases, the absorption rate of light passing through the transparent electrode layer 26 via various pathways reduces. In order to uniformly supply an electric current to the active layer 14, the transparent electrode layer 26 must have low contact resistance to the upper contact layer 15. Of course, if the supper-lattice layer 25 is additionally formed, the transparent electrode layer 26 must have low contact resistance to the supper-lattice layer 25.
  • the mesh-type electrode 27 functions to uniformly transfer an electric current to the transparent electrode layer 26 and may be formed to a relatively larger thickness than that of the transparent electrode 26.
  • a conventional semi-transparent conductive film is made of materials having a thickness of several tens A to several hundreds A, and its thickness influences its transparency and conductivity heavily.
  • the transparent electrode 26 is formed to a thinner thickness of a few A to several tens A. This decrease in the thickness of the transparent electrode 26 can provide a sharp increase of about 10-30% in its transparency as compared to that of the prior art, but results in a reduction in its conductivity, thus making it impossible to spread a current uniformly.
  • the mesh-type electrode layer 27 is formed on the transparent electrode layer 26 such that the mesh-type electrode layer 27 allows an electric current to be uniformly supplied to the transparent electrode layer 26 covering most area of the device.
  • Each of the transparent electrode layer 26 and the mesh-type electrode layer 27 preferably has a thickness of 0.0001-10 ⁇ m.
  • the current spreading will not be sufficiently made since the conductivity of a p-type Ill-nitride semiconductor constituting the upper contact layer 15 is low.
  • the upper contact layer 15 has a thickness of 0.01-2 ⁇ m, the current spreading to the entire area of the device will easily occur and operation voltage will also be reduced, since the transparent electrode layer 26 and/or the supper-lattice layer 25, which has good conductivity, exist below the mesh-type electrode layer 27. For this reason, even when the size of each opening in the mesh-type electrode is not fine, the current spreading can be sufficiently achieved, thus eliminating a need for a finely-patterning process as required in the prior art.
  • the openings of the mesh-type electrode layer 27 preferably have a size of 0.1 ⁇ m-1 mm and the mesh-type electrode 27 preferably has a width of 0.1
  • the total area covered by the mesh-type electrode layer 27 preferably is 10-90% of the surface of the transparent electrode layer 26.
  • FIG. 3 is a drawing illustrating the pathway of current spreading in the device of FIG. 2. As shown in FIG. 3, an electric current is first spread through the mesh-type electrode layer 27 and then spread through the transparent electrode layer 26 and the supper-lattice layer 25 to the remaining portions of the device.
  • the device according to the present invention shows an average of about 15-18% increase in power as compared to that of the prior art, although this increase in power can vary depending on the size of the mesh-type electrode and the thicknesses of the electrodes.
  • FIG. 4 is a schematic view illustrating a Ill-nitride semiconductor light-emitting device according to a second embodiment of the present invention.
  • the device of FIG. 4 has a structure in which a mesh-type electrode layer 27 is first formed, on which the transparent electrode layer 26 is then formed. If the mesh-type electrode layer 27 is formed of a metal with high reflectivity, there will be an advantage in that light absorption by the electrode is reduced since light emitted from the active layer 14 first meets the mesh-type electrode 27 with high reflectivity.

Landscapes

  • Led Devices (AREA)

Abstract

Dans cette invention, la diffusion du courant s'effectue principalement au travers de la couche d'électrode transparente (27) plutôt que la couche de contact supérieure (15). De ce fait, le courant se diffuse suffisamment, même quand la dimension de chaque ouverture n'est pas faiblement dimensionnée et il n'est pas indispensable, dans cette invention, que la couche d'électrode en treillis (27) soit finement exécutée comme dans l'état actuel de la technique, ce qui représente un avantage, et il est, par conséquent, possible de limiter une partie recouverte par cette couche d'électrode (27), ce qui permet d'augmenter l'efficacité quantique extérieure du composant. En particulier, même quand l'épaisseur de la couche de contact supérieure (15) est mince (< 0,5 νm), la dimension de chaque ouverture de la couche d'électrode (27) peut être augmentée à une dimension supérieure à 4 νm, de sorte qu'il n'est pas nécessaire d'exécuter une opération de configuration compliquée.
PCT/KR2004/001318 2003-06-03 2004-06-03 Composant luminescent semi-conducteur au nitrure iii possedant une electrode en treillis Ceased WO2004112157A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0035817 2003-06-03
KR1020030035817A KR100452751B1 (ko) 2003-06-03 2003-06-03 그물망 전극이 적용된 ⅲ-질화물 반도체 발광소자

Publications (1)

Publication Number Publication Date
WO2004112157A1 true WO2004112157A1 (fr) 2004-12-23

Family

ID=33550148

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2004/001318 Ceased WO2004112157A1 (fr) 2003-06-03 2004-06-03 Composant luminescent semi-conducteur au nitrure iii possedant une electrode en treillis

Country Status (2)

Country Link
KR (1) KR100452751B1 (fr)
WO (1) WO2004112157A1 (fr)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007036164A1 (fr) * 2005-09-30 2007-04-05 Lattice Power (Jiangxi) Corporation Dispositif electroluminescent a semi-conducteur et son procede de fabrication
DE102007029391A1 (de) * 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102008035900A1 (de) * 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
US20100001292A1 (en) * 2006-08-25 2010-01-07 National Institute Of Advanced Industrial Science High Efficiency Indirect Transition Semiconductor Ultraviolet Light Emitting Device
KR100941136B1 (ko) * 2008-05-30 2010-02-09 고려대학교 산학협력단 메시 구조의 전극층이 형성된 발광 소자 및 그 제조 방법
CN1828969B (zh) * 2005-02-05 2010-05-12 三星移动显示器株式会社 有机发光器件和白光发射器件
WO2011070047A1 (fr) * 2009-12-11 2011-06-16 Osram Opto Semiconductors Gmbh Puce à semi-conducteur optoélectronique et procédé de production d'une puce à semi-conducteur optoélectronique
CN102222748A (zh) * 2010-04-16 2011-10-19 清华大学 发光二极管
US8053805B2 (en) 2009-12-11 2011-11-08 Lg Innotek Co., Ltd. Light emitting device, light emitting device and package, and lighting system
CN102569584A (zh) * 2011-07-07 2012-07-11 杨继远 一种改善光性能的欧姆接触电极的制造方法
US8373178B2 (en) 2010-02-12 2013-02-12 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system having the same
USRE44429E1 (en) 2003-10-15 2013-08-13 Epistar Corporation Light-emitting semiconductor device having enhanced brightness
EP2498304A4 (fr) * 2009-11-06 2014-03-05 Semileds Optoelectronics Co Diode électroluminescente verticale munie d'une électrode réinstallée vers l'extérieur
US8710508B2 (en) * 2008-01-28 2014-04-29 Samsung Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
TWI447963B (zh) * 2010-05-06 2014-08-01 Hon Hai Prec Ind Co Ltd 發光二極體
EP1928031B1 (fr) * 2005-09-20 2019-11-13 Toyoda Gosei Co., Ltd. Dispositif electroluminescent semi-conducteur a base de nitrure et procédé de fabrication du même
JP6994126B1 (ja) 2021-03-18 2022-01-14 聯嘉光電股▲ふん▼有限公司 多重の接触点を備える発光ダイオードチップ構造
CN116565093A (zh) * 2023-07-11 2023-08-08 江西兆驰半导体有限公司 一种led芯片制备方法及led芯片

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101171357B1 (ko) 2004-12-27 2012-08-13 서울옵토디바이스주식회사 발광 소자 및 이의 제조 방법
CN102569587B (zh) * 2007-04-09 2015-09-16 晶元光电股份有限公司 具有叠合透明电极的半导体发光装置
KR20110083292A (ko) * 2010-01-14 2011-07-20 주식회사 에피밸리 3족 질화물 반도체 발광소자
KR20120081506A (ko) 2011-01-11 2012-07-19 삼성전자주식회사 수직형 발광소자
KR101640537B1 (ko) * 2015-07-23 2016-07-18 고려대학교 산학협력단 전도성 필라멘트가 형성된 투명 전극을 포함하는 반도체 장치 및 이의 제조 방법
KR101734091B1 (ko) * 2015-08-13 2017-05-11 광주과학기술원 수평형 발광 다이오드용 투명전극 및 이를 이용한 발광다이오드
CN106684223B (zh) * 2016-12-07 2019-04-12 华灿光电（浙江）有限公司 一种发光二极管的芯片及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909459A (en) * 1994-07-11 1999-06-01 Sony Corporation Surface-emitting semiconductor light emitting device
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
WO2001091194A1 (fr) * 2000-05-23 2001-11-29 Osram Opto Semiconductors Gmbh Composant destine au domaine optoelectronique et son procede de production
US6495862B1 (en) * 1998-12-24 2002-12-17 Kabushiki Kaisha Toshiba Nitride semiconductor LED with embossed lead-out surface
EP1383177A1 (fr) * 2002-07-17 2004-01-21 Sumitomo Electric Industries, Ltd. Structure d'électrode du type p d'une LED

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909459A (en) * 1994-07-11 1999-06-01 Sony Corporation Surface-emitting semiconductor light emitting device
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6495862B1 (en) * 1998-12-24 2002-12-17 Kabushiki Kaisha Toshiba Nitride semiconductor LED with embossed lead-out surface
WO2001091194A1 (fr) * 2000-05-23 2001-11-29 Osram Opto Semiconductors Gmbh Composant destine au domaine optoelectronique et son procede de production
EP1383177A1 (fr) * 2002-07-17 2004-01-21 Sumitomo Electric Industries, Ltd. Structure d'électrode du type p d'une LED

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE44429E1 (en) 2003-10-15 2013-08-13 Epistar Corporation Light-emitting semiconductor device having enhanced brightness
CN1828969B (zh) * 2005-02-05 2010-05-12 三星移动显示器株式会社 有机发光器件和白光发射器件
EP1928031B1 (fr) * 2005-09-20 2019-11-13 Toyoda Gosei Co., Ltd. Dispositif electroluminescent semi-conducteur a base de nitrure et procédé de fabrication du même
WO2007036164A1 (fr) * 2005-09-30 2007-04-05 Lattice Power (Jiangxi) Corporation Dispositif electroluminescent a semi-conducteur et son procede de fabrication
US20100001292A1 (en) * 2006-08-25 2010-01-07 National Institute Of Advanced Industrial Science High Efficiency Indirect Transition Semiconductor Ultraviolet Light Emitting Device
US8592824B2 (en) * 2006-08-25 2013-11-26 National Institute Of Advanced Industrial Science And Technology High efficiency indirect transition semiconductor ultraviolet light emitting device
EP2160773B1 (fr) * 2007-06-26 2018-11-07 OSRAM Opto Semiconductors GmbH Puce semi-conductrice optoélectronique
US8299484B2 (en) 2007-06-26 2012-10-30 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
DE102007029391A1 (de) * 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US8710508B2 (en) * 2008-01-28 2014-04-29 Samsung Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
US8530923B2 (en) 2008-04-30 2013-09-10 Osram Opto Semiconductor Gmbh LED chip
DE102008035900A1 (de) * 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
KR100941136B1 (ko) * 2008-05-30 2010-02-09 고려대학교 산학협력단 메시 구조의 전극층이 형성된 발광 소자 및 그 제조 방법
EP2498304A4 (fr) * 2009-11-06 2014-03-05 Semileds Optoelectronics Co Diode électroluminescente verticale munie d'une électrode réinstallée vers l'extérieur
WO2011070047A1 (fr) * 2009-12-11 2011-06-16 Osram Opto Semiconductors Gmbh Puce à semi-conducteur optoélectronique et procédé de production d'une puce à semi-conducteur optoélectronique
US8053805B2 (en) 2009-12-11 2011-11-08 Lg Innotek Co., Ltd. Light emitting device, light emitting device and package, and lighting system
US8829560B2 (en) 2009-12-11 2014-09-09 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip
EP2333851B1 (fr) * 2009-12-11 2019-02-13 LG Innotek Co., Ltd. Dispositif électroluminescent, emballage de dispositif électroluminescent et système d'éclairage
US8373178B2 (en) 2010-02-12 2013-02-12 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system having the same
US8633042B2 (en) 2010-04-16 2014-01-21 Tsinghua University Light emitting diode
US20110254021A1 (en) * 2010-04-16 2011-10-20 Hon Hai Precision Industry Co., Ltd. Light emitting diode
CN102222748A (zh) * 2010-04-16 2011-10-19 清华大学 发光二极管
TWI447963B (zh) * 2010-05-06 2014-08-01 Hon Hai Prec Ind Co Ltd 發光二極體
CN102569584A (zh) * 2011-07-07 2012-07-11 杨继远 一种改善光性能的欧姆接触电极的制造方法
JP6994126B1 (ja) 2021-03-18 2022-01-14 聯嘉光電股▲ふん▼有限公司 多重の接触点を備える発光ダイオードチップ構造
JP2022144198A (ja) * 2021-03-18 2022-10-03 聯嘉光電股▲ふん▼有限公司 多重の接触点を備える発光ダイオードチップ構造
CN116565093A (zh) * 2023-07-11 2023-08-08 江西兆驰半导体有限公司 一种led芯片制备方法及led芯片

Also Published As

Publication number Publication date
KR100452751B1 (ko) 2004-10-15

Similar Documents

Publication Publication Date Title
WO2004112157A1 (fr) Composant luminescent semi-conducteur au nitrure iii possedant une electrode en treillis
US6307218B1 (en) Electrode structures for light emitting devices
KR101013506B1 (ko) 적층 구조의 투명 전극을 갖는 반도체 발광 장치
US7012281B2 (en) Light emitting diode device and manufacturing method
US6380564B1 (en) Semiconductor light emitting device
JP3333356B2 (ja) 半導体装置
US20020063256A1 (en) Method and structure for forming an electrode on a light emitting device
TWI702737B (zh) 發光二極體元件
KR101209163B1 (ko) 반도체 발광소자
US6946685B1 (en) Light emitting semiconductor method and device
JP2008218440A (ja) ＧａＮ系ＬＥＤ素子および発光装置
US7078319B2 (en) Laser separated die with tapered sidewalls for improved light extraction
US6777717B1 (en) LED reflector for improved light extraction
KR101116111B1 (ko) 반도체 발광소자
JP2003243705A (ja) 発光半導体の方法及び装置
KR100682878B1 (ko) 플립칩형 발광소자
JPH08306643A (ja) ３−５族化合物半導体用電極および発光素子
CN212303695U (zh) Led芯片
CN212303696U (zh) Led芯片
KR101171357B1 (ko) 발광 소자 및 이의 제조 방법
KR100452749B1 (ko) 고밀도 미세 표면격자를 가진 ⅲ-질화물 반도체 발광소자
US20040113168A1 (en) Light extraction efficiency of gan based leds
US12408493B2 (en) Light-emitting element including first semiconductor layer having exposed portion with first region and second regions
US12364081B2 (en) Light emitting device and method for producing the same
US12224389B2 (en) Light-emitting element including a reflective portion having a first, second, and third layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase