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WO2004033750A1 - Depot de materiau en micro-echelle - Google Patents

Depot de materiau en micro-echelle Download PDF

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Publication number
WO2004033750A1
WO2004033750A1 PCT/US2003/031846 US0331846W WO2004033750A1 WO 2004033750 A1 WO2004033750 A1 WO 2004033750A1 US 0331846 W US0331846 W US 0331846W WO 2004033750 A1 WO2004033750 A1 WO 2004033750A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
micro
channel
microfluidic
scale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/031846
Other languages
English (en)
Inventor
Jeremy W. Burdon
Paul A. Von Allmen
David L. Wilcox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2003279879A priority Critical patent/AU2003279879A1/en
Publication of WO2004033750A1 publication Critical patent/WO2004033750A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes

Definitions

  • the present invention generally concerns systems and methods for material deposition; and more particularly, in various representative and exemplary embodiments, to micro-scale, plasma-assisted material deposition.
  • Micro-scale discharges have received some attention for potential applications as UV light sources and chemical processing tools.
  • the typical operating voltage of existing conventional devices is on the order of a couple to several hundred volts, generally requiring bulky power supplies which substantially reduce potential for field deployment. Accordingly, there exists a need for micro-scale plasma discharge devices capable of operating in voltage regimens as low as up to about 10-20V.
  • the present invention provides a , system and method for micro-scale, plasma-assisted material deposition.
  • An exemplary system and method for providing such a device is disclosed as comprising inter alia: a plasma source; a microfiuidic channel; a medium disposed within the micro-channel; a substrate within the micro-channel; and means for activating a low voltage plasma discharge to form a material product on a surface of the substrate.
  • Fabrication of the disclosed devices is relatively simple, inexpensive and straightforward. Additional advantages of the present invention will be set forth in the Detailed Description which follows and may be obvious from the Detailed Description or may be learned by practice of exemplary embodiments of the invention. Still other advantages of the invention may be realized by means of any of the instrumentalities, methods or combinations particularly pointed out in the claims.
  • FIG. 1 representatively depicts a schematic circuit design for a low voltage gas discharge traveling wave generator in accordance with an exemplary embodiment of the present invention
  • FIG. 2 generally illustrates an LTCC (Low Temperature Co-fired Ceramic) micro-scale plasma discharge device in accordance with another exemplary embodiment of the present invention.
  • LTCC Low Temperature Co-fired Ceramic
  • a voltage may be applied to a chemical solution for electrochemical deposition, or a plasma may be created to serve to create a highly reactive species which may be used to etch a material (i.e., plasma-etching of Silicon using SF 6 ), reactively modify a surface (i.e., plasma oxidation of polymer surfaces to incorporate oxygen containing groups in non-polar polymers), or deposit a new material (P-CVD processes for which there are many options to deposit thin-film dielectrics or polymers).
  • a material i.e., plasma-etching of Silicon using SF 6
  • reactively modify a surface i.e., plasma oxidation of polymer surfaces to incorporate oxygen containing groups in non-polar polymers
  • deposit a new material P-CVD processes for which there are many options to deposit thin-film dielectrics or polymers.
  • An exemplary embodiment of the present invention representatively discloses a device (or array of devices) to accomplish these functions on a micro-scale and in situ with microfluidic-based devices, for example, micro-discharge devices suitably adapted to excite a relatively small volume of discharge in a gas or vapor through electrodes.
  • the discharge device of the invention may include multiple bonded ceramic layers (260, 270, 280, 290 and 230 of thickness 240) with electrodes formed between the layers (i.e., cathodes generally corresponding to layers 270 and 290; anodes generally corresponding to layers 260 and 280), but is not necessarily confined to MLC (Multi-Layer Ceramic) technology.
  • MLC Multi-Layer Ceramic
  • devices may also be constructed with substantially similar function using any other technology that can be generally extended in three-dimensions, such as Silicon, plastic, glass, and other materials well-known to skilled artisans.
  • contacts cathode pad 210, and anode pad 220
  • the electrodes may be grouped in different geometric arrangements.
  • the electrodes may contact a hole through some or all of the ceramic layers that define a discharge cavity (250).
  • Different groupings of electrodes will generally produce different types of discharge and serve different applications. It should also be noted that it is the intention of this invention to be suitably adapted for combination with various integration platform technologies capable of performing the described function in integrated 'hybrid' devices.
  • micro-discharge device or plurality of micro-discharge devices
  • a plasma-assisted process such as an etch or materials deposition (i.e., to further control or refine the internal functionality of the micro-device), or chemically alter the surface chemistry of the fluidic passageways.
  • etch or materials deposition i.e., to further control or refine the internal functionality of the micro-device
  • chemically alter the surface chemistry of the fluidic passageways may be used to control the motion of fluids, control a fluid- surface chemical reaction, or alter the chemo-physical interaction of the fluid components with the surface.
  • the miniaturized fabrication device may perform similar micro-plating processes again to alter the "downstream" structure of embedded microchannels to deposit, for example, catalysts.
  • metals which typically may not be cofired in MLC structures in an oxidizing atmosphere copper, nickel, chromium, etc.
  • integration of noble metal thin films as sensors and catalysts Au, Pd, Pt, etc.
  • integration of organic layers for surface reaction or fluid control thin-film oxide layers in polymeric, silicon, or MLC microfluidic devices.
  • Integration of electrode and cavity configurations provides a micro-energy source capable of generating a micro-plasma within a microchannel device cavity or channel which can be ignited under external control, and, as a result of the plasma ignition, be used for the deposition of a preferred substance (polymer, dielectric, metal, etc.) within a particular region of the microchannel device.
  • a micro-energy source capable of generating a micro-plasma within a microchannel device cavity or channel which can be ignited under external control, and, as a result of the plasma ignition, be used for the deposition of a preferred substance (polymer, dielectric, metal, etc.) within a particular region of the microchannel device.
  • the material desired within the microchannel passageways may not be compatible with the integration and processing technology of the platform technology. Examples of this may be the integration of organic functionality within a ceramic device that generally cannot survive the required processing temperatures of the device, or the integration of thin oxide layers in LTCC, or conversely, the integration of oxide or metal phases within polymeric material platforms.
  • the new structure also offers the possibility of a device that can deploy 'plasma cleaning'. This technology may lend itself to "hand-held" portable devices that are designed for genomic applications.
  • the present invention may also be used for the creation of a miniature plasma reaction cavity or channel for catalytic reforming of MeOH for the fuel cell system.
  • the use of localized plasma generators to modify surface properties of CMEMs devices may provide opportunities to control the surface chemistry. For example, distinct hydrophobic / hydrophilic regions may be defined within the plasma vicinity by introduction of a monomer vapor for plasma-assisted polymerization. It may also be possible to modify the stoichiometry of the ceramic surface.
  • the instant invention may also be adapted for plasma-assisted cell lysis or plasma-assisted cleaning / decontamination of surfaces.
  • Plasma synthesis of materials plasmas can be used as a rich source of reactive radical species which can interact with surfaces to inter alia transport condensable species (plasma deposition) or modify microstructure and composition (etching).
  • This heterogeneous chemistry can result in the synthesis of highly valuable meta-stable solid phases such as diamond, the deposition of thin insulating films on silicon, or the etching of silicon to form microelectronic features.
  • a unique plasma-based process for depositing high-temperature protective coatings promises to improve the efficiency and reduce the wear and tear of technologies ranging from engines and turbines to hip joints.
  • the disclosed device generally operates at low voltage and will therefore be field deployable in a more efficient manner than a device requiring bulky high voltage power supplies. It will furthermore be possible to integrate the proposed device with other elements leading to a system with increased functionality.
  • the proposed device may be used in all applications requiring a micro- scale plasma discharge.
  • Examples include inter alia micro-scale UV light sources, micro-scale in situ chemical processing such as micro-CVD, methanol reforming or NO x remediation and/or chemical sensing.
  • any method or process claims may be executed in any order and are not limited to the specific order presented in the claims.
  • the components and/or elements recited in any apparatus claims may be assembled or otherwise operationally configured in a variety of permutations to produce substantially the same result as the present invention and are accordingly not limited to the specific configuration recited in the claims.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

A titre d'exemple, on décrit un système et un procédé pour le dépôt de matériau au plasma, en micro-échelle. Le système comprend, entre autres: une source de plasma (100); un canal microfluidique (250); un milieu occupant ce canal; un substrat dans ce canal; et un système d'activation de décharge au plasma à faible tension, pour le dépôt d'un matériau sur une surface du substrat. Les modalités et les spécifications présentées dans l'invention peuvent être associées à différentes formes de contrôle et d'adaptation ou autres modifications éventuelles, ce qui permet d'améliorer les caractéristiques de dépôt. A titre d'exemple, on décrit différentes variantes illustrant le dépôt au plasma in situ de matériau, avec possibilité d'intégration facile aux techniques existantes de réalisation en micro-échelle, pour l'amélioration du facteur de forme et du poids de conditionnement de dispositif, y compris d'autres valeurs intervenant dans la fabrication et/ou les performances de dispositif.
PCT/US2003/031846 2002-10-08 2003-10-07 Depot de materiau en micro-echelle Ceased WO2004033750A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003279879A AU2003279879A1 (en) 2002-10-08 2003-10-07 Plasma-assisted micro-scale material deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41697802P 2002-10-08 2002-10-08
US60/416,978 2002-10-08

Publications (1)

Publication Number Publication Date
WO2004033750A1 true WO2004033750A1 (fr) 2004-04-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/031846 Ceased WO2004033750A1 (fr) 2002-10-08 2003-10-07 Depot de materiau en micro-echelle

Country Status (2)

Country Link
AU (1) AU2003279879A1 (fr)
WO (1) WO2004033750A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109070039A (zh) * 2015-12-11 2018-12-21 巴黎科学与文学联大-拉丁区 气液双相等离子体反应器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0716438A1 (fr) * 1994-12-06 1996-06-12 International Business Machines Corporation Dispositif d'emission de champ et procédé pour sa fabrication
WO2000021659A1 (fr) * 1998-10-09 2000-04-20 Motorola Inc. Dispositifs microfluidiques multicouches integres
US20030034740A1 (en) * 2001-08-20 2003-02-20 Motorola, Inc. MHCD and microfluidic apparatus and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0716438A1 (fr) * 1994-12-06 1996-06-12 International Business Machines Corporation Dispositif d'emission de champ et procédé pour sa fabrication
WO2000021659A1 (fr) * 1998-10-09 2000-04-20 Motorola Inc. Dispositifs microfluidiques multicouches integres
US20030034740A1 (en) * 2001-08-20 2003-02-20 Motorola, Inc. MHCD and microfluidic apparatus and method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ITO T ET AL: "Application of microscale plasma to material processing", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 386, no. 2, 15 May 2001 (2001-05-15), pages 300 - 304, XP004232069, ISSN: 0040-6090 *
ITO T ET AL: "Multiple microscale plasma CVD apparatuses on a substrate", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 390, no. 1-2, 30 June 2001 (2001-06-30), pages 234 - 236, XP004246682, ISSN: 0040-6090 *
SCHOENBACH K H ET AL: "Microhollow electrode discharge flat panel displays", PLASMA SCIENCE, 1997. IEEE CONFERENCE RECORD - ABSTRACTS., 1997 IEEE INTERNATIONAL CONFERENCE ON SAN DIEGO, CA, USA 19-22 MAY 1997, NEW YORK, NY, USA,IEEE, US, PAGE(S) 315, ISBN: 0-7803-3990-8, XP010230577 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109070039A (zh) * 2015-12-11 2018-12-21 巴黎科学与文学联大-拉丁区 气液双相等离子体反应器
CN109070039B (zh) * 2015-12-11 2022-01-28 巴黎科学与文学联大-拉丁区 气液双相等离子体反应器

Also Published As

Publication number Publication date
AU2003279879A1 (en) 2004-05-04

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