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WO2004032194A3 - Method and system for analyzing data from a plasma process - Google Patents

Method and system for analyzing data from a plasma process Download PDF

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Publication number
WO2004032194A3
WO2004032194A3 PCT/US2003/030741 US0330741W WO2004032194A3 WO 2004032194 A3 WO2004032194 A3 WO 2004032194A3 US 0330741 W US0330741 W US 0330741W WO 2004032194 A3 WO2004032194 A3 WO 2004032194A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma process
analyzing data
plasma
measurements
performance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/030741
Other languages
French (fr)
Other versions
WO2004032194A2 (en
Inventor
Deana Delp
Lee Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004541862A priority Critical patent/JP2006501684A/en
Priority to AU2003279058A priority patent/AU2003279058A1/en
Publication of WO2004032194A2 publication Critical patent/WO2004032194A2/en
Publication of WO2004032194A3 publication Critical patent/WO2004032194A3/en
Priority to US11/093,277 priority patent/US20050199341A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

A method and system for analyzing multivariate data of plasma processes in which response surface and neural networks are utilized to improve or find optimal process settings of the plasma process such that performance measurements are compared against model measurements to modify a current plasma process to achieve optimized processing performance.
PCT/US2003/030741 2002-10-01 2003-09-30 Method and system for analyzing data from a plasma process Ceased WO2004032194A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004541862A JP2006501684A (en) 2002-10-01 2003-09-30 Method and system for analyzing plasma process data
AU2003279058A AU2003279058A1 (en) 2002-10-01 2003-09-30 Method and system for analyzing data from a plasma process
US11/093,277 US20050199341A1 (en) 2002-10-01 2005-03-30 Method and system for analyzing data from a plasma process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41465602P 2002-10-01 2002-10-01
US60/414,656 2002-10-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/093,277 Continuation US20050199341A1 (en) 2002-10-01 2005-03-30 Method and system for analyzing data from a plasma process

Publications (2)

Publication Number Publication Date
WO2004032194A2 WO2004032194A2 (en) 2004-04-15
WO2004032194A3 true WO2004032194A3 (en) 2004-07-15

Family

ID=32069752

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/030741 Ceased WO2004032194A2 (en) 2002-10-01 2003-09-30 Method and system for analyzing data from a plasma process

Country Status (7)

Country Link
US (1) US20050199341A1 (en)
JP (1) JP2006501684A (en)
KR (1) KR101027183B1 (en)
CN (1) CN100353485C (en)
AU (1) AU2003279058A1 (en)
TW (1) TWI264043B (en)
WO (1) WO2004032194A2 (en)

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CN104991581B (en) * 2015-06-08 2019-08-23 北京北方华创微电子装备有限公司 A kind of compress control method and device of processing chamber
TWI559218B (en) * 2015-12-09 2016-11-21 英業達股份有限公司 Data providing method
KR102799814B1 (en) * 2016-03-04 2025-04-22 램 리써치 코포레이션 Systems and methods for reducing power reflected towards a higher frequency rf generator during a period of a lower frequency rf generator and for using a relationship to reduce reflected power
US10622219B2 (en) * 2016-12-06 2020-04-14 Tokyo Electron Limited Methods and systems for chamber matching and monitoring
KR20190048491A (en) 2017-10-31 2019-05-09 삼성전자주식회사 Method for predicting etch effect and method for determining input parameters
US20210073610A1 (en) * 2017-12-27 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Thin film manufacturing apparatus and thin film manufacturing apparatus using neural network
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US11756840B2 (en) * 2018-09-20 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Reflectance measurement system and method thereof
JP7220573B2 (en) * 2019-01-24 2023-02-10 株式会社荏原製作所 Information processing system, information processing method, program and substrate processing apparatus
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US12170188B2 (en) 2019-07-26 2024-12-17 Jusung Engineering Co., Ltd. Substrate processing apparatus and interlock method thereof
JP7677730B2 (en) * 2020-09-09 2025-05-15 東京エレクトロン株式会社 Analysis device, analysis method, analysis program, and plasma processing control system
CN112530773B (en) * 2020-11-27 2023-11-14 北京北方华创微电子装备有限公司 Semiconductor process equipment
JP7511501B2 (en) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 Plasma processing apparatus and monitoring device
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Also Published As

Publication number Publication date
TW200419631A (en) 2004-10-01
CN1682338A (en) 2005-10-12
JP2006501684A (en) 2006-01-12
CN100353485C (en) 2007-12-05
AU2003279058A8 (en) 2004-04-23
KR101027183B1 (en) 2011-04-05
WO2004032194A2 (en) 2004-04-15
KR20050054985A (en) 2005-06-10
US20050199341A1 (en) 2005-09-15
AU2003279058A1 (en) 2004-04-23
TWI264043B (en) 2006-10-11

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