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WO2004025716A1 - Appareil de depot de couches minces a debit et ensemble injecteur correspondant - Google Patents

Appareil de depot de couches minces a debit et ensemble injecteur correspondant Download PDF

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Publication number
WO2004025716A1
WO2004025716A1 PCT/KR2003/001783 KR0301783W WO2004025716A1 WO 2004025716 A1 WO2004025716 A1 WO 2004025716A1 KR 0301783 W KR0301783 W KR 0301783W WO 2004025716 A1 WO2004025716 A1 WO 2004025716A1
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WO
WIPO (PCT)
Prior art keywords
flow path
wafer
flow
thin film
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2003/001783
Other languages
English (en)
Inventor
Young-Hoon Park
Hong-Joo Lim
Choon-Kum Baik
Jin-Pil Heo
Sang-Jin Lee
Chul-Hyun An
Hyun-Soo Kyung
Sang-Kyu Lee
Ho-Seung Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPS Ltd
Original Assignee
IPS Ltd
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Filing date
Publication date
Application filed by IPS Ltd filed Critical IPS Ltd
Priority to AU2003258844A priority Critical patent/AU2003258844A1/en
Publication of WO2004025716A1 publication Critical patent/WO2004025716A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • the present invention relates to a flow-type thin film deposition apparatus and an injector assembly therefor, and more particularly, to a flow-type thin film deposition apparatus for depositing thin films on a wafer such as a semiconductor substrate, and an injector assembly for the flow-type thin film deposition apparatus.
  • Thin film deposition apparatuses are roughly classified into flow-type apparatuses and shower head-type apparatuses according to a way of injecting a reactant gas.
  • Flow-type thin film deposition apparatuses deposit thin films by flowing a reactant gas from a side of a wafer over the surface of the wafer.
  • shower head-type thin film deposition apparatuses deposit thin films by spraying a reactant gas from a position above a wafer to the surface of the wafer.
  • Flow-type thin film deposition apparatuses and shower head-type thin film deposition apparatuses have their own advantages and disadvantages. Continuous attempts are being made to develop thin film deposition apparatuses combining the advantages of the two apparatuses.
  • the present invention provides a flow-type thin film deposition apparatus, which can be efficiently managed and easily maintained and repaired.
  • the present invention also provides an injector assembly, which can flow a reactant gas in a more uniform manner from a side of a wafer over the surface of the wafer.
  • an injector assembly for a flow-type thin film deposition apparatus which deposits thin films by flowing a reactant gas from one side to other side of a wafer (w)
  • the injector, assembly comprising: an injector (51 ) in which a first flow path (53) and a second flow path (54) are formed in parallel with each other; and a gas distributor (56) disposed at the front of the injector (51 ), and having a diffusion portion (56c) formed therein for diffusing reactant gases injected from the first flow path (53) and the second flow path (54) and a plurality of injection holes (56a) formed therein for injecting a reactant gas diffused by the diffusion portion (56c) toward the wafer (w).
  • the injector (51 ) may further have a first micro flat flow path (53a) and a second micro flat flow path (54a) communicating with the first flow path (53) and the second flow path (54), the first and second micro flat flow paths (53a) and (54a) being open to the diffusion portion (56c).
  • the first flow path (53) and the second flow path (54) may be disposed in an annular form inside the injector (51 ) and respectively connected to a first reactant gas supply line (P1 ) and a second reactant gas supply line (P2).
  • the diffusion portion (56c) of the gas distributor (56) may have a first inclined surface (56b) and a second inclined surface (56b') formed therein for allowing an injected reactant gas to smoothly flow through the plurality of injection holes (56a).
  • a flow-type thin film deposition apparatus comprising: a chamber (10) having a passage (1 1 ) formed at one side thereof for allowing a wafer (w) to come in and out therethrough and a chamber lid (13) detachably fitted to the chamber (10); a reactor (20) installed inside the chamber (10), and having a reactor body (21 ) in which the wafer (w) is received and a reactor lid (22) placed upon the top of the reactor body (21 ); a wafer block (25) detachably disposed inside the reactor (20) for allowing the wafer (w) to be mounted thereon and heating the wafer (w); a lid elevating unit (30) for raising the reactor lid (22) to open or close the reactor body (21 ); a wafer elevating unit (40) for raising the wafer (w) mounted on the wafer block (25); an injector assembly (50) disposed at one side of the reactor body (21) for injecting a reactant gas and/or inert gas
  • the reactor body (21 ) may have a gas curtain groove (23) formed along the outer circumstance thereof outside the wafer block (25) such that an inert gas flows through the gas curtain groove (23) or a vacuum is formed in the gas curtain groove (23)
  • the wafer block (25) may include a circular substrate heating plate (25b) for applying heat energy to the wafer (w) and a circular substrate heating plate support (25c) for supporting the circular substrate heating body (25b).
  • the wafer block (25) may further include a mount panel (25a) disposed over the circular substrate heating plate (25b) and having a mount portion (25a'), on which the wafer (w) is mounted, formed thereon.
  • a ceramic ring (26) may be interposed between the circular substrate heating plate (25b) and the reactor body (21 ) to prevent heat generated by the circular substrate heating plate (25b) from being transferred to the reactor body (21 ).
  • Heat transfer preventing plates (27)(28) may be disposed below the circular substrate heating plate (25b) to prevent heat generated by the circular substrate heating plate (25b) from being transferred to the chamber (10).
  • the lid elevating unit (30) may be disposed in the chamber (10) or the reactor body (21), and includes a first cylinder (31) having first rods
  • the injector assembly may include: an injector (51 ) in which a first flow path (53) and a second flow path (54) are formed in parallel with each other; and a gas distributor (56) having a diffusion portion (56c) formed therein for diffusing reactant gases injected from the first flow path (53) and the second flow path (54) and a plurality of injection holes (56a) formed therein for injecting a reactant gas diffused by the diffusion portion (56c) toward the wafer (w).
  • the injector (51 ) may further have a first micro flat flow path (53a) and a second micro flat flow path (54a) communicating with the first flow path (53) and the second flow path (54), the first and second flat flow paths (53a) and (54a) being open to the diffusion portion (56c).
  • the first flow path (53) and the second flow path (54) may be disposed in an annular form inside the injector (51 ) and respectively connected to a first reactant gas supply line (P1 ) and a second reactant gas supply line (P2).
  • the diffusion portion (56c) of the gas distributor (56) may have a first inclined surface (56b) and a second inclined surface (56b') to allow an injected reactant gas to smoothly flow through the injection holes (56a).
  • the gas outlet (60) may include a pumping shield (61 ) installed at other side of the reactor body (21 ), a pumping profile controller (62) coupled to the pumping shield (61 ) and having a plurality of coupling holes (62a) formed therein, and a plurality of inserts (63) inserted into the coupling holes (62a) and having a plurality of pumping holes of different diameters formed therein.
  • a top plank (71 ) and/or a back shield (72) may be interposed between the mount portion (25a') and the injector assembly (50) to adjust a distance between the mount portion (25a') and the injector assembly (50).
  • FIG. 1 is an exploded perspective view of a flow-type thin film deposition apparatus according to the present invention.
  • FIG. 2 is a side sectional view of the flow-type thin film deposition apparatus in FIG. 1.
  • FIG. 3 is a perspective view of a chamber in FIG. 1.
  • FIG. 4 is a perspective view of a reactor and a lid elevating unit disposed in the chamber in FIG. 3.
  • FIG. 5 is a perspective view of a reactor body in FIG. 4.
  • FIG. 6 is a perspective view of a ceramic ring disposed at a side of a wafer block in FIG. 5 and heat transfer preventing plates disposed below the wafer block.
  • FIG. 7 is a perspective view of an injector assembly for the flow-type thin film deposition apparatus in FIG. 1 .
  • FIG. 8 is a perspective view of an injector in FIG. 7.
  • FIG. 9 is a schematic diagram of a first flow path and a second flow path in the injector in FIG. 8.
  • FIG. 10 is a perspective view of a gas distributor in FIG. 7.
  • FIG. 1 1 is a perspective view illustrating a route through which a reactant gas flows in the injector assembly in FIG. 7.
  • FIG. 12 is a perspective view of a gas outlet for the flow-type thin film deposition apparatus in FIG. 1.
  • FIG. 13 is a perspective view of a top plank disposed on a reactor lid in FIGS. 1 and 2.
  • FIG. 14 is a perspective view of a back shield disposed in the reactor in FIGS. 1 and 2.
  • FIG. 7 is a perspective view of an injector assembly for a flow-type thin film deposition apparatus in FIG. 1
  • FIG. 8 is a perspective view of an injector in FIG. 7
  • FIG. 9 is a schematic diagram of a first flow path and a second flow path in the injector in FIG. 8
  • FIG. 10 is a perspective view of a gas distributor in FIG. 7.
  • the injector assembly is used for a flow-type thin film deposition apparatus which deposits thin films by flowing a reactant gas from one side to other side of a wafer w over the surface of the wafer w.
  • the injector assembly 50 includes an injector 51 and a gas distributor 56 disposed at the front of the injector 51.
  • the injector 51 has a substantially hexagonal shape and made of metal.
  • a first flow path 53 and a second flow path 54 are formed inside the injector 51 in a longitudinal direction and in parallel with each other.
  • the first flow path 53 and the second flow path 54 are disposed in an annular form and respectively connected to a first reactant gas supply line P1 and a second reactant gas supply line P2.
  • the first flow path 53 and the second flow path 54 are divided into two parts at a rear portion of the injector 51.
  • the two parts run to both sides of the injector 51 in the Y-axis direction from a flow path P1 ' formed by the first reactant gas supply line P1 , turn by 90 degrees along the X-axis direction at the ends of the both sides, turn by 90 degrees along the Y-axis direction at the ends of the width of injector 51 , and meet together in the Y-axis direction again at a front portion of the injector 51.
  • the injector 51 further includes a first micro flat flow path 53a and a second micro flat flow path 54a communicating with the first flow path 53 and the second flow path 54 respectively and being open to a diffusion portion 56c which will be explained later.
  • the first micro flat flow path 53a and the second micro flat flow path 54a communicate with the front flow paths formed in the Y-axis direction. Steps of forming the first flow path 53 and the second flow path 54, and the first micro flat flow path 53a and the second micro flat flow path 54a will be explained as follows.
  • the steps includes drilling the rear portion and the front portion of the injector 51 , milling the ends of the both sides of the injector 51 to form hollows, and inserting a flow path sealing member 52 into the hollows formed at the ends of the both sides.
  • a hole is formed so that the first reactant gas supply line P1 which supplies a first reactant gas can be connected to the center of the first flow path 53, and another hole is formed so that the second reactant gas supply line P2 which supplies a second reactant gas can be connected to the center of the second flow path 54.
  • the first micro flat flow path 53a and the second micro flat flow path 54a are formed by bringing a wire saw into the flow paths formed at the front portion of the injector 51 and perform wire cutting operations.
  • a reactant gas supplied from the first reactant gas supply line P1 and the second reactant supply line P2 passes through the annular first flow path 53 and the annular second flow path 54, and then is injected through the first micro flat flow path 53a and the second micro flat flow path 54a.
  • the present embodiment employs two micro flat flow path deformation preventing members 55.
  • each of the micro flat flow path transformation preventing members 55 is installed at the front of the injector 51 by forming grooves on the injector 51 to extend from a portion somewhat higher than the first micro flat flow path 53a to a portion somewhat lower than the second micro flat flow path 54a and being fitted into the grooves. Even though the injector 51 is thermally deformed, the interval between the first micro flat flow path 53a and the second micro flat flow path 54a can be maintained by virtue of the micro flat flow path transformation preventing members 55.
  • the gas distributor 56 is disposed at the front of the injector 51 to include the first micro flat flow path 53a and the second micro flat flow path 54a.
  • the gas distributor 56 has a diffusion portion 56c formed therein for diffusing reactant gases injected from the micro flat flow paths 53a and 54a and a plurality of injection holes 56a formed therein for injecting a reactant gas diffused by the diffusion portion 56c toward the wafer w.
  • the diffusion portion 56c has a first inclined surface 56b and a second inclined surface 56b' to allow an injected reactant gas to smoothly flow through the injection holes 56a. While the present embodiment shows that the injector 51 and the gas distributor 56 are separately manufactured and then coupled to each other with bolts and nuts, the present invention is not limited thereto.
  • the injector and the gas distributor can be integrally formed with each other.
  • FIG. 1 1 is a perspective view illustrating a route through which a reactant gas flows in the injector assembly in FIG. 7.
  • FIG. 1 1 how a reactant gas flows through the first reactant gas supply line P1 and the second reactant gas supply line P2, the first flow path 53 and the second flow path 54, the first micro flat flow path 53a and the second micro flat flow path 54a, the diffusion portion 56c, and the injection holes 56a will be understood more easily.
  • the injector assembly includes two flow paths and two micro flat flow paths therein to form two component thin films, this is exemplary and illustrative and thus, the present invention is not limited thereto. For example, when three or more component thin films are formed, the injector can employ three or more flow paths and micro flat flow paths.
  • FIG. 1 is an exploded perspective view of a flow-type thin film deposition apparatus according to the present invention
  • FIG. 2 is a side sectional view of the flow-type thin film deposition apparatus in FIG. 1
  • FIG. 3 is a perspective view of a chamber in FIG. 1
  • FIG. 4 is a perspective view of a reactor and a lid elevating unit disposed in the chamber in FIG. 3
  • FIG. 5 is a perspective view of a reactor body in FIG. 4
  • FIG. 6 is a perspective view of a ceramic ring disposed at a side of a wafer block in FIG. 5 and heat transfer preventing plates disposed below the wafer block.
  • FIG. 12 is a perspective view of a gas outlet applied to the flow-type thin film deposition apparatus in FIG. 1
  • FIG. 13 is a perspective view of a top plank disposed on a reactor lid in FIGS. 1 and 2
  • FIG. 14 is a perspective view of a back shield disposed in the reactor in FIGS. 1 and 2.
  • the flow-type thin film deposition apparatus includes a chamber 10, a reactor 20 installed inside the chamber 10 and having a reactor body 21 and a reactor lid 22, a wafer block 25 detachably disposed in the reactor body 21 for heating wafer mounted thereon, a lid elevating unit 30 for raising the reactor lid 22 to open or close the reactor body 21 , a wafer elevating unit 40 for raising the wafer w inside reactor 20, an injector assembly 50 for injecting a reactant gas and/or inert gas from one side to other side in the reactor 20, and a gas outlet 60 for discharging a reactant gas and/or inert gas introduced inside the reactor 20.
  • the chamber 10 is combined with a transfer module (not shown), in which a robot (not shown) carries the wafer w, through a vat vale V.
  • a chamber lid 13 is detachably fitted to the chamber 10 to open or hermetically close the chamber 10.
  • a passage 11 through which the wafer w comes in and out is formed at one side surface of the chamber 10 as shown in FIGS. 1 and 3.
  • a view port 12 is formed at other side surface of the chamber 10 so as for users to see the inside of the chamber 10.
  • a window usually made of quartz is fitted into the view port 12.
  • the reactor 20 on which the wafer w is mounted has the reactor lid 22 placed on top of the reactor body 21 to hermetically close the reactor body 21.
  • the wafer block 25, as illustrated in FIGS. 1 and 2, includes a circular substrate heating plate 25b for applying heat energy to the wafer w, a circular substrate heating plate support 25c for supporting the circular substrate heating plate 25b, and a mount panel 25a disposed on the circular substrate heating plate 25b and having a mount portion 25a' on which the wafer w is mounted.
  • the circular substrate heating plate 25b and the circular substrate heating plate support 25c have a "T" shape as a whole when they are seen from a side.
  • a heater is installed inside the circular substrate heating plate 25b.
  • the mount portion 25a' disposed on the mount panel 25a has a recess as deep as the thickness of the wafer w.
  • the recess is in a round form so that a round wafer can be mounted on the recess. In this manner, when the wafer w is mounted on the mount portion 25a', a reactant gas and/or inert gas can smoothly flow without any obstacles.
  • a gas curtain groove 23 is formed along the outer circumference of the reactor body 21 outside the wafer block 25.
  • the gas curtain groove 23 acts as a passage through which an inert gas supplied from an inert gas supplier P3 connected to the reactor body 21 flows.
  • a gas curtain is formed by flowing an inert gas.
  • the reactor body 21 is made of metal, for example, Titanium (Ti) or Inconel in the present embodiment. While in the present embodiment, the gas curtain is formed by flowing an inert gas, a gas curtain effect can also be achieved by forming a vacuum in the gas curtain groove 23.
  • the gas curtain groove 23 keeps a reactant gas inside the reactor 20 from flowing to the chamber 10 or a gas inside the chamber 10 from flowing to the reactor 20.
  • a reactant gas used in a thin film deposition process has a high reactivity, such that when a small amount of a reactant gas is leaked into the inside of the chamber 10, the chamber 10 is contaminated, and on the contrary, when an external gas flows into the reactor 20, it may have a bad effect upon the thin film deposition process.
  • the gas curtain groove 23 serves to prevent such gas leakage.
  • a ceramic ring 26 is interposed between the circular substrate heating plate 25b and the reactor body 21 to prevent heat generated by the circular substrate heating plate 25b from being excessively transferred to the reactor body 21.
  • the circular substrate heating plate 25b heats the wafer w and prepares for a thin film deposition process. At this time, heat generated by the circular substrate heating plate 25b should be smoothly transferred to the wafer w through the mount portion 25a'. For this reason, the ceramic ring 26 having good insulating properties is interposed between the circular substrate heating plate 25b and the reactor body 21.
  • heat transfer preventing plates 27 and 28 are disposed below the circular substrate heating plate 25b to prevent heat generated by the circular substrate heating plate 25b from being excessively transferred to the chamber 10.
  • two or more heat transfer preventing plates may be disposed in such a manner as to be spaced apart from one another by a predetermined distance.
  • the lid elevating unit 30, as shown in FIG. 4, is disposed in the chamber 10, or the reactor body 21.
  • the lid elevating unit 30 is disposed in the reactor body 21.
  • the lid elevating unit 30 includes a first cylinder 31 having first rods 32 which are raised from the first cylinder 31 , and elevating pins 33 corresponding in position to support portions 22a and interlocked with the first rods 32.
  • the support portions 22a are formed at edge portions of the reactor body 21.
  • the wafer elevating unit 40 is disposed in the chamber 10 or the reactor body 21. In the present embodiment, the wafer elevating unit 40 is disposed in the chamber 10. As shown in FIG.
  • the wafer elevating unit 40 includes a second cylinder 41 having second rods 42 which are raised from the second cylinder 41 , and wafer pins 43 interlocked with the second rods 42 and protruding to pin holes 25a" formed on the mount portion 25a'.
  • the wafer pins 43 protrude through the pin holes 25a" which are formed on the mount portion 25a' at equal intervals as shown in FIG. 5.
  • the injector assembly 50 as illustrated in FIGS. 7 through 10, includes an injector 51 and a gas distributor 56 disposed at the front of the injector 51.
  • the injector 51 has annular first and second flow paths 53 and 54 formed in parallel with each other, and first and second micro flat flow paths 53a and 54a respectively communicating with the first and second flow paths 53 and 54 and being open at the front portion of the injector 51.
  • the first flow path 53 is connected to a first reactant gas supply line P1 which supplies a first reactant gas
  • the second flow path 54 is connected to a second reactant gas supply line P2 which supplies a second reactant gas.
  • the gas distributor 56 is formed at the front of the injector 51 to include the first micro flat flow path 53a and the second micro flat flow path 54a.
  • the gas distributor 56 has a diffusion portion 56c formed therein for diffusing reactant gases injected from the first micro flat flow path 53a and the second micro flat flow path 54a, which respectively communicate with the first flow path 53 and the second flow path 54, a plurality of injection holes 56a formed therein for injecting a reactant gas diffused by the diffusion portion 56c toward the wafer w, and first and second inclined surfaces 56b and 56b' disposed in the diffusion portion 56c for allowing an injected reactant gas to smoothly flow through the injection holes 56a.
  • the gas outlet 60 includes a pumping shield 61 installed at other side of the reactor body 21 , a pumping profile controller 62 coupled to the pumping shield 61 and having a plurality of coupling holes 62a formed therein, and a plurality of inserts 63 inserted into the coupling holes 62a and having pumping holes of different diameters formed therein.
  • the inserts 63 having larger pumping holes are disposed farther from the center of the pumping profile controller 62. This is because the density of a reactant gas passing the center of the reactor body 21 is different from the density of a reactant gas passing both edges of the reactor body 21.
  • the density of a reactant gas passing the center of the reactor body 21 is greater than the density of a reactant gas passing both the edges of the reactor body 21 , the amount of a reactant gas discharged to both edges of the gas outlet 60 has to be greater than that of a reactant gas discharged to the center of the gas outlet 60 in order to achieve a uniform density of a reactant gas flowing over the wafer w.
  • the arrangement of the pumping holes may vary depending on a used reactant gas and process conditions. In this case, the injector assembly can be widely used by replacing the inserts 63 having pumping holes with one another.
  • a top plank 71 shown in FIG. 13 and/or a back shield 72 shown in FIG. 1 may be further disposed inside the reactor body 21 to adjust a distance between the mount portion 25a' and the injector assembly 50.
  • the top plank 71 is disposed at a rear portion of the reactor lid 22 and has a stepped portion 71 a protruding downward therefrom.
  • the stepped portion 71a is disposed over a front portion of the gas distributor 56 of the injector assembly 50 to fix the position of the injector assembly 50.
  • the width of the stepped portion 71a varies, the position of the injector assembly 50 varies. Therefore, the distance between the mount portion 25a and the injector assembly 50 can be adjusted by varying the width of the stepped portion 71 a.
  • the back shield 72 also functions to adjust a distance between the mount portion 25a' and the injector assembly 50.
  • the back shield 72 is disposed inside the reactor body 21 corresponding to the lower end of the top plank 71.
  • the back shield 72 is disposed under the front portion of the gas distributor 56 to adjust the position of the injector assembly 50 along with the top plank 71. In this manner, a distance between the wafer w and the injector assembly 50 can be adjusted by varying the width of the stepped portion 71 a of the top plank 71 and the back shield 72.
  • the operation of the flow-type thin film deposition apparatus constructed as above will be explained as follows. While the chamber lid 13 is put on the chamber 10, the lid elevating unit 30 operates to raise the reactor lid 22 from the reactor body 21. Then, the vat valve V is opened and a robot arm of the transfer module moves to transfer the wafer w into the chamber 10. Here, the wafer pins 43 are raised to the pin holes formed on the mount portion 25a' of the mount panel 25a and the wafer w transferred into the chamber 10 is mounted on the wafer pins 43.
  • the robot arm leaves the chamber 10 and the vat valve is closed.
  • the wafer pins 43 are lowered, such the wafer w is mounted on the mount portion 25a'.
  • the elevating pins 33 are lowered, such that the reactor body 21 is closed with the reactor lid 22.
  • an internal space smaller than or as large as ten piled up wafers w can be formed inside the reactor 20.
  • a space as large as 2 or 3 piled up wafers can be formed. That is to say, a flat and small space is formed inside the reactor 20.
  • an inert gas supplied from the inert gas supply line P3 flows through the gas curtain groove 23 inside the reactor body 21.
  • a first reactant gas and/or inert gas and a second reactant gas and/or inert gas are injected alternately through the injector assembly 50.
  • the gases flow to the gas outlet 60 over the surface of the wafer mounted in the small space inside the reactor 20.
  • the first reactant gas and/or inert gas supplied from the first reactant gas supply line P1 are injected from the first flow path 53 and the first micro flat flow path 53a, diffused by the diffusion portion 56c, and injected to the wafer w through the injection holes 56a.
  • the second reactant gas and/or inert gas supplied from the second reactant gas supply line P2 are injected from the second flow path 54 and the second micro flat flow path 54a, diffused by the diffusion portion 56c, and injected to the wafer w through the injection holes 56a. While the first and second reactant gases flow over the surface of the wafer, an atomic layer deposition (ALD) process which deposits thin films on the surface of a wafer with atomic scale dimensions is performed.
  • ALD atomic layer deposition
  • the first reactant gas and the second reactant gas used in the thin film deposition have a high reactivity, when a small amount of a reactant gas is leaked into the chamber, the chamber is easily contaminated. On the contrary, when an external gas flows into the reactor 20, it has a bad effect upon the thin film deposition. Thus, for the purpose of preventing the first and second reactant gases from being leaked to the outside of the reactor 20, an inert gas flows through the gas curtain groove 23, thereby further reducing the possibility of gas leakage. Nevertheless, the first and second reactant gases not used for depositing thin films are not completely discharged from the gas outlet 60 but there is a possibility that they are discharged from the reactor 20. Therefore, it is preferable that the pressure inside the chamber 10 is higher than that inside the reactor 20. Consequently, an over pressure gas is introduced into the chamber 10 through a line (not shown).
  • the first reactant gas and the second reactant gas not used for depositing thin films are discharged to the outside through the gas outlet 60.
  • the density of a reactant gas passing the center of the reactor body 21 may be higher than that of a reactant gas passing the edges of the reactor body 21.
  • the amount of a reactant gas discharged to both the edges of the gas outlet 60 has to be greater than that of a reactant gas discharged to the center. This is achieved by making the pumping holes of the inserts 63 at the center of the gas outlet 60 smaller than those at the edges of the gas outlet 60. Through this, a uniform gas distribution inside the reactor body 21 can be ensured. Through these procedures, thin films can be deposited on the wafer with atomic scale dimensions.
  • the flow-type thin film deposition apparatus and the injector assembly for the same according to the present invention can easily separate the wafer block, the injector assembly, or the gas outlet from the reactor during cleaning or repair.
  • the present invention employs the injector assembly and the gas outlet, and accordingly, a uniform distribution of a reactant gas over the surface of the wafer can be ensured.

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Abstract

L'invention concerne un appareil de dépôt de couches minces à débit et un ensemble injecteur conçu pour cet appareil. Cet dépôt de couches minces comprend : une chambre (10) pourvue, sur un de ses côtés, d'un passage (11) à travers lequel une plaquette (w) peut entrer et sortir et d'un couvercle (13) posé de façon amovible sur la chambre (10) ; un réacteur (20) installé dans la chambre (10) et pourvu d'un corps de réacteur (21) dans lequel la plaquette (w) est placée et d'un couvercle de réacteur (22) placé sur le sommet du corps de réacteur (21) ; un bloc (25) disposé de façon amovible dans le réacteur (20) sur lequel la plaquette (w) est montée, ce bloc permettant de chauffer la plaquette (w) ; une unité de soulèvement du couvercle (30) servant à soulever le couvercle (22) du réacteur afin d'ouvrir ou fermer le corps de réacteur (21) ; une unité de soulèvement de la plaquette (40) servant à soulever la plaquette (w) montée sur le bloc (25) ; un ensemble injecteur (50) disposé d'un côté du corps de réacteur (21) afin d'injecter un gaz réactant et/ou un gaz inerte ; et une sortie de gaz (60) disposée de l'autre côté du corps de réacteur (21) afin d'évacuer un gaz réactant et/ou un gaz inerte introduits.
PCT/KR2003/001783 2002-09-14 2003-09-01 Appareil de depot de couches minces a debit et ensemble injecteur correspondant Ceased WO2004025716A1 (fr)

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KR10-2002-0056005 2002-09-14
KR10-2002-0056005A KR100474971B1 (ko) 2002-09-14 2002-09-14 플로우타입 박막증착장치 및 그에 채용되는 인젝터 어셈블리

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JP2008527748A (ja) * 2005-01-18 2008-07-24 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
WO2009085376A3 (fr) * 2007-12-21 2009-10-15 Asm America, Inc. Injection séparée de substances réactives dans la formation sélective de films
EP2360721A1 (fr) * 2010-02-23 2011-08-24 Saint-Gobain Glass France Dispositif de positionnement d'au moins deux objets, agencements, notamment agencements de corps multicouches, installation de traitement, notamment pour la sélénisation d'objets, procédé de positionnement d'au moins deux objets
WO2013027102A1 (fr) * 2011-08-22 2013-02-28 Soitec Système de dépôt ayant des grilles d'accès et procédé associé
FR2979748A1 (fr) * 2011-09-07 2013-03-08 Soitec Silicon On Insulator Systemes de depot ayant des portes d'acces a des emplacements souhaitables, et procedes relatifs
US20130104802A1 (en) * 2006-11-22 2013-05-02 Soitec Gallium trichloride injection scheme
CN104584194A (zh) * 2012-08-28 2015-04-29 株式会社Eugene科技 衬底处理装置
CN104718602A (zh) * 2012-08-28 2015-06-17 株式会社Eugene科技 基板处理装置
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination

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US8211230B2 (en) 2005-01-18 2012-07-03 Asm America, Inc. Reaction system for growing a thin film
US9359672B2 (en) 2005-01-18 2016-06-07 Asm America, Inc. Reaction system for growing a thin film
US10468291B2 (en) 2005-01-18 2019-11-05 Asm America, Inc. Reaction system for growing a thin film
JP2008527748A (ja) * 2005-01-18 2008-07-24 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US20130104802A1 (en) * 2006-11-22 2013-05-02 Soitec Gallium trichloride injection scheme
US9481943B2 (en) * 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
KR101413189B1 (ko) * 2007-12-21 2014-06-27 에이에스엠 아메리카, 인코포레이티드 막들의 선택적 형성에 있어서 반응성 종의 분리 주입
WO2009085376A3 (fr) * 2007-12-21 2009-10-15 Asm America, Inc. Injection séparée de substances réactives dans la formation sélective de films
CN102754197A (zh) * 2010-02-23 2012-10-24 法国圣戈班玻璃厂 用于加工多层体的布置、系统和方法
WO2011104222A1 (fr) * 2010-02-23 2011-09-01 Saint Gobain Glass France Dispositif, installation et procédé de traitement de corps multicouches
EP2360721A1 (fr) * 2010-02-23 2011-08-24 Saint-Gobain Glass France Dispositif de positionnement d'au moins deux objets, agencements, notamment agencements de corps multicouches, installation de traitement, notamment pour la sélénisation d'objets, procédé de positionnement d'au moins deux objets
US9236282B2 (en) 2010-02-23 2016-01-12 Saint-Gobain Glass France Arrangement, system, and method for processing multilayer bodies
CN102754197B (zh) * 2010-02-23 2016-05-25 法国圣戈班玻璃厂 用于加工多层体的布置、系统和方法
WO2013027102A1 (fr) * 2011-08-22 2013-02-28 Soitec Système de dépôt ayant des grilles d'accès et procédé associé
CN103748263B (zh) * 2011-08-22 2016-10-26 索泰克公司 具有存取闸的沉积系统及相关方法
CN103748263A (zh) * 2011-08-22 2014-04-23 索泰克公司 具有存取闸的沉积系统及相关方法
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
FR2979748A1 (fr) * 2011-09-07 2013-03-08 Soitec Silicon On Insulator Systemes de depot ayant des portes d'acces a des emplacements souhaitables, et procedes relatifs
US20150191821A1 (en) * 2012-08-28 2015-07-09 Eugene Technology Co., Ltd. Substrate processing device
CN104718602A (zh) * 2012-08-28 2015-06-17 株式会社Eugene科技 基板处理装置
CN104584194A (zh) * 2012-08-28 2015-04-29 株式会社Eugene科技 衬底处理装置
CN104718602B (zh) * 2012-08-28 2017-04-26 株式会社Eugene科技 基板处理装置
CN104584194B (zh) * 2012-08-28 2017-06-06 株式会社Eugene科技 衬底处理装置
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US11626313B2 (en) 2017-11-03 2023-04-11 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination

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TWI244686B (en) 2005-12-01
AU2003258844A1 (en) 2004-04-30

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