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WO2004082035A1 - Diode electroluminescente et procede de production - Google Patents

Diode electroluminescente et procede de production

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Publication number
WO2004082035A1
WO2004082035A1 PCT/JP2004/003039 JP2004003039W WO2004082035A1 WO 2004082035 A1 WO2004082035 A1 WO 2004082035A1 JP 2004003039 W JP2004003039 W JP 2004003039W WO 2004082035 A1 WO2004082035 A1 WO 2004082035A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
semiconductor layer
emitting diode
compound semiconductor
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/003039
Other languages
English (en)
Inventor
Ryouichi Takeuchi
Wataru Nabekura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to US10/548,534 priority Critical patent/US20060237741A1/en
Priority to DE112004000426T priority patent/DE112004000426T5/de
Publication of WO2004082035A1 publication Critical patent/WO2004082035A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Definitions

  • This invention relates to a light-emitting diode using the technique of applying an alkali glass substrate and particularly to a light-emitting diode of high luminance and a method for the production thereof.
  • the technique of removing an opaque semiconductor substrate and attaching a transparent substrate by adhesion for the purpose of imparting increased luminance and exalted mechanical strength to a light-emitting diode has been known.
  • a transparent substrate is joined by adhesion to the surface of a semiconductor layer or to the surface exposed by the removal of an opaque semiconductor substrate.
  • the method for joining this transparent substrate by adhesion is known in various forms including a method of directly joining by adhesion a transparent substrate to a semiconductor layer at an elevated temperature under pressure as disclosed in JP-C 3230638, a method of directly utilizing the wafer bonding technique as disclosed in JP-A HEI 6-302857, and a method of utilizing a transparent viscous substance, such as an epoxy resin, as disclosed in JP-A 2002-246640. Further, a method of joining a semiconductor layer and a transparent substrate through a transparent electroconductive film, such as ITO, has been proposed as disclosed in JP-C 2588849.
  • the prior art has found technical difficulty in the means to join the whole surface of a semiconductor to a transparent substrate and, therefore, has devised a rich variety of methods for the joining.
  • the method of direct junction generally necessitates a high temperature of 700°C or more and a high pressure, exerts a large stress on the semiconductor layer, and frequently induces an uneven and defective junction unless the surface is flat and smooth.
  • the junction at an elevated temperature gives rise to a warp due to a difference in coefficients of thermal expansion, induces such a large mechanical stress as to sustain a rupture during the course of cooling and, consequently, more often than not open a crack as well, incites a degradation of the quality of the light-emitting part, and calls for highly advanced technique and equipment for ensuring stable production.
  • the joined part frequently sustains separation and crack during such steps as dicing and scribing for the separation of a diode.
  • it has been difficult to establish a method of junction that reconciles perfect adhesion at a low temperature and a low stress and satisfaction of resistance to heat.
  • the conventional method of joining the entire surface of a semiconductor to a transparent substrate has entailed a degradation of the quality of a light-emitting part and necessitated highly advanced technique and equipment to ensure stable production. It has been further difficult to establish a method of junction that reconciles perfect adhesion at a low temperature and a low stress and satisfaction of resistance to heat.
  • This invention has been proposed in the light of the problems mentioned above. It was initiated in the discovery of an adhesive layer exhibiting high adhesive strength and excelling in resistance to heat even under the condition of junction using a temperature of 500°C or less. It is, therefore, aimed at providing a light-emitting diode of high luminance allaying the stress generated during the course of junction and ensuring stable production and a method for the production thereof.
  • the impartation of high luminance is accomplished because the removal of the opaque substrate and the attachment of the transparent substrate result in eliminating the absorption of light in the semiconductor substrate and further because the provision of the compound semiconductor layer on part of the surface thereof with an ohmic electrode and a metal reflecting layer results in enabling the light of the light-emitting part to be efficiently extracted to the exterior.
  • this invention provides the following means. The present inventors have discovered that the technique of anode junction can be utilized for joining a compound semiconductor layer and a transparent substrate using glass and further that the compound semiconductor layer and an alkali glass substrate can be stably joined under a low stress and consequently that the product enjoying high resistance to heat can be obtained.
  • the present invention provides a light-emitting diode comprising a compound semiconductor layer that contains a light-emitting part and an alkali glass substrate that contains at least 1 mass % of one element selected from the group consisting of sodium (Na), calcium (Ca), barium (Ba) and potassium (K), and exhibits transparency to light-emitting wavelength of the light-emitting part, the alkali glass substrate having a construction fixed or joined in contact with the compound semiconductor layer.
  • the one element of the alkali glass substrate has a concentration A in a neighborhood of a junction with the semiconductor layer that is lower than a concentration B on a back surface of the alkali glass substrate and satisfies relation ofB > 1.5 x A.
  • the alkali glass substrate has silicon dioxide (SiO 2 ) and boron oxide (B 2 O 3 ) as main components thereof and has a lead content of 0.1 mass % or less.
  • a joint surface between the alkali glass substrate and the compound semiconductor layer is a mirror-processed surface having an average surface roughness of 2 nm or less.
  • the alkali glass substrate has a coefficient of thermal expansion in a range of 3 to 7 x 10 "6 /K.
  • the alkali glass substrate has a thickness of 70 ⁇ m or more and 300 ⁇ m or less, and the compound semiconductor layer has a thickness of 30 ⁇ m or less.
  • the light-emitting part contained in the compound semiconductor layer is formed of AlGalnP with high emission efficiency.
  • the compound semiconductor layer contains a layer of GaP that is a material suitable for etching stoppage and current diffusion.
  • the compound semiconductor layer and the alkali glass substrate each have an As content of 0.1 mass % or less.
  • the present invention also provides a method for the production of a light-emitting diode, comprising a step of growing a compound semiconductor layer on a semiconductor substrate untransparent to light-emitting wavelength to form a grown compound semiconductor layer, a step of joining the grown compound semiconductor layer and an alkali glass substrate transparent to the light-emitting wavelength by an anode junction method, a step of removing the untransparent semiconductor substrate, a step of forming a first ohmic electrode having a first polarity on part of a main surface opposite an anode junction surface of the compound semiconductor layer, a step of forming a second ohmic electrode on a compound semiconductor layer having a second polarity in the grown semiconductor layer and a step of covering the first ohmic electrode and a compound semiconductor layer having the first polarity in the grown semiconductor layer with a metal reflecting layer.
  • the semiconductor substrate untransparent to light-emitting wavelength has grown thereon a compound semiconductor layer that contains a light-emitting part having a light-emitting layer, and the compound semiconductor layer is polished before the step of joining, thereby bringing an average surface roughness to 2 nm or less.
  • the metal reflecting layer is formed of gold (Au) or rhodium (Rh) that is high in reflectance and stable in material.
  • the untransparent semiconductor substrate has a temperature in a range of 300 to 500°C during the anode junction method.
  • the step of removing the untransparent semiconductor substrate includes a step of removing part of the compound semiconductor layer, and the step of removing part of the compound semiconductor layer includes a step of performing selective etching treatment for etching only crystals of a predetermined composition.
  • the method for the production of a light-emitting diode can further comprise a step of covering the light-emitting layer with a protective film.
  • the present invention further provides a light-omitting diode lamp having an electrode of a light-emitting diode chip produced by the method for the production of a light-emitting diode and constructed in a flip chip electrode by joining it with a gold (Au) bump.
  • the electrode of the light-emitting diode chip is constructed in a flip chip electrode by joining it with a soldering alloy having a low melting point of 450°C or less.
  • Fig. 1 is a plan view of a semiconductor light-emitting diode covered by Examples 1 and 2 of this invention.
  • Fig. 2 is a cross section taken through Fig. 1 along line II-II.
  • Fig. 3 is a cross section of an epitaxial wafer covered by Examples 1 and 2 of this invention and Comparative Examples 1 to 6.
  • Fig. 4 is a plan view of a semiconductor light-emitting diode covered by Comparative Example 7.
  • Fig. 5 is a cross section taken through Fig. 4 along line V-V.
  • Fig. 6 is a plan view of a light-emitting diode covered by Examples 1 and 2 of this invention and Comparative Examples 1 to 6.
  • Fig. 7 is a cross section of a light-emitting diode covered by Examples 1 and 2 of this invention and Comparative Examples 1 to 6.
  • Fig. 8 is a plan view of a modified example of the structure of Fig. 1, having the electrode of the n-type region disposed as being separated by an equal distance from the electrode of the p-type region.
  • Fig. 9 is a plan view of a modified example of the structure of Fig. 1, forming the p-electrode in the shape of a mesh so as to uniformize the potential applied to the n-electrode.
  • Fig. 10 is a plan view of a modified example of the structure of Fig. 1, thinning the part of a small distance between the electrodes in order to offset the area and the distance and ensure uniform flow of electric current.
  • Fig. 11 is a plan view of a modified example of the structure of Fig. 1, using parallel electrodes in order to ensure uniform flow of electric current.
  • Fig. 12 is a plan view of an example of forming a bilaterally or vertically symmetrical shape in order to uniformize the flow of electric current.
  • Fig. 13 is a plan view of a modified example of the structure of Fig. 1, forming the p-electrode in the shape of an array of stepping-stones in order to ensure uniform flow of electric current.
  • the transparent glass substrate that is used for the anode junction is a so-called alkali glass substrate having boron oxide and silicon oxide as main components and containing sodium oxide, calcium oxide, barium oxide and potassium oxide.
  • This invention sets the concentration of sodium (Na), calcium (Ca), barium (Ba) or potassium (K) element in the alkali glass at a level of 1 mass % or more.
  • the upper limit of the concentration of the element is 30 mass %, preferably 15 mass % or less, and more preferably 10 mass % or less. If the concentration of the element exceeds 30 mass %, the excess will possibly result in degrading the joining strength or inducing alkali pollution.
  • the material for the alkali glass is preferred to avoid containing lead and arsenic.
  • the alkali glass substrate is preferred to have a coefficient of thermal expansion approximating that of a compound semiconductor layer, i.e. the level in the range of 3 to 7 x 10 "6 /K. The reason for this approximation is that if the difference in the coefficient of thermal expansion is unduly large, it will prevent the stress on the semiconductor layer during the course of heating and cooling from decreasing.
  • the thickness of the alkali glass substrate is preferred to be 300 ⁇ m or less on account of the ease with which the fabrication into a chip is accomplished.
  • the thickness is preferred to be 70 ⁇ m or more in the light of the occurrence of a crack during the adhesion of a transparent substrate and the convenience of handling a die bond as during the step of assembly using a chip.
  • the content of lead in the alkali glass substrate is preferred to be 0.1 mass % or less, favorably 0.01 mass % or less, and more preferably in the range 0.01 mass % to 0.0001 mass %.
  • the opaque semiconductor substrate for basing the growth of a compound semiconductor layer substrates of GaAs, InP, GaP and Si are available.
  • the light-emitting part may be formed of a GaP, an AlGalnP mixed crystal or a GaAlAs mixed crystal, for example.
  • Such other semiconductors as are utilized in the known compound semiconductor light-emitting diodes are also available.
  • structures, such as the single hetero structure, double hetero structure and quantum well structure that are generally used for a light-emitting part are available.
  • the light-emitting diode of the structure contemplated by this invention has a great effect particularly in enhancing the luminance of a light-emitting diode provided with an AlGalnP light-emitting part using a GaAs substrate which is difficult to allow addition to the wall thickness and opaque in the ordinary structure on account of the lattice matching.
  • the buffer layer heretofore used to cope with a semiconductor substrate the Bragg reflection layer, the etching stop layer intended for selective etching, the contact layer for lowering the contact resistance of an ohmic electrode, the electric current diffusion layer, the electric current stopping layer for controlling the region for allowing flow of electric current and the electric current constriction layer, may be used as combined in addition to the light-emitting part.
  • These layers may be properly selected and combined to suit factors, such as the method of production, the cost and the quality.
  • a commercially available apparatus for anode junction may be utilized. This method consists in applying an electric field to the glass substrate and the compound semiconductor layer while keeping the laminate heated. Further, during the course of the junction, it is preferable to apply to the laminate a pressure of a degree that prevents the joined surfaces from slipping. This pressure possibly enhances the uniformity and the strength of junction. Though the junction prefers use of a low temperature, the temperature actually proper for the junction falls in the range of 300 to 500°C, especially optimally in the neighborhood of 400°C.
  • the opaque semiconductor substrate can be removed by methods, such as mechanical work, abrasion and chemical etching, for example.
  • chemical etching techniques the selective etching which utilizes the difference of etching speed depending on the quality of a material proves to be the optimum method in terms of mass-productivity, reproducibility and uniformity.
  • This selective etching is a method which, when used where an AlGalnP layer is superposed on a GaAs substrate, for example, selectively etches the GaAs layer exclusively.
  • a flip chip light-emitting diode structure is optimally obtained by forming the surface for drawing light of a transparent substrate, removing a first electrode and part of a compound semiconductor layer on the surface of the compound semiconductor layer on the side on which an opaque substrate has been removed, forming a second electrode on a second polar compound semiconductor layer, and further disposing a metal reflecting layer for covering the first electrode and the surface of the compound semiconductor layer.
  • any of the known techniques for the production of a light-emitting diode may be utilized. Specifically, the light-emitting diode is produced via the steps of forming an ohmic electrode, forming a protective film, and separating, testing and rating a chip.
  • Fig. 1 and Fig. 2 illustrate a manufactured semiconductor light-emitting diode, Fig. 1 depicting a plan view thereof and Fig. 2 a cross section taken through Fig. 1 along line II-II.
  • Fig. 3 is a detailed plan view of the laminar structure of a semiconductor epitaxial wafer used in a semiconductor light-emitting diode.
  • the manufactured semiconductor light-emitting diode is a red light-emitting diode (LED) having AlGalnP for a light-emitting layer.
  • a compound semiconductor layer 13 formed by sequentially superposing a buffer layer 130 made of Si-doped n-type GaAs, an etching stop layer 131 made of Si-doped n-type (Alo .5 Gao .5 )o .5 In 0.5 P, a lower cladding layer 132 made of Si-doped n-type (Alo .7 Gao .3 m 0.5 P, a light-emitting layer 133 made of undoped (Al 0.2 Ga 0.8 )o .5 Ino.
  • an upper cladding layer 134 made of Zn-doped p-type (Alo. 7 Gao. 8 ) 0 ⁇ I ⁇ io. 5 P and a Zn-doped p-type GaP layer 135 is formed on a semiconductor substrate 11 made of GaAs single crystal having a plane inclined by 2° from a Si-doped n-type (001) plane.
  • a light emission layer 12 of this LED has a double hetero structure that is formed of the lower cladding layer 132, the light-emitting layer 133 and the upper clad layer 134.
  • phosphine (PH 3 ) or arsine (AsH 3 ) was used as the raw material for the component elements of Group V.
  • the superposing temperatures of the component layers superposed by the MOCVD method in forming the compound semiconductor layer 13 were unified at 730°C.
  • the carrier concentration of the GaAs buffer layer 130 was about 5 x 10 18 cm “13 and the wall thickness thereof was about 0.2 ⁇ m.
  • the (Alo .5 Ga 05 )o .5 Ino .5 P carrier concentration of the etching stop layer 131 was about 2 x 10 18 cm “3 and the wall thickness thereof was about 1 ⁇ m.
  • the carrier concentration of the lower cladding layer 132 was about 8 x 10 17 cm “3 and the wall thickness thereof was about 1 ⁇ m.
  • the light-emitting layer 133 had an undoped wall thickness of 0.5 ⁇ m.
  • the carrier concentration of the upper cladding layer 134 was about 2 x 10 17 cm "3 and the wall thickness thereof was about
  • the carrier concentration of the GaP layer 135 was about 5 x 10 cm " and the wall thickness thereof was 7 ⁇ m.
  • the surface of the epitaxially grown compound semiconductor layer was polished to an average surface roughness of 0.5 nm. This roughness could be rated by visually observing the cross section of the layer by the use of an optical surface roughness meter, an atomic force microscope or an electron microscope.
  • a so-called Pyrex® glass coefficient of thermal expansion: 5 x 10 "6 /K) using B 2 O 3 and SiO 2 as main components thereof and having a thickness of 150 ⁇ m was used.
  • the surface of this glass was mirror-polished to an average roughness of 1 nm.
  • the compound semiconductor layer and the transparent substrate were set as superposed on an anode junction device.
  • the interior of this device was evacuated to vacuum.
  • the semiconductor layer and the transparent substrate were nipped between upper and lower heaters and heated to 400°C. Further, an electric voltage of +800 V was applied to the surface of the transparent substrate to join the two layers directly.
  • the time at this joining process was set at 15 minutes.
  • the total concentration of the elements, Na, Ca, K and Ba, on the joined surface of the glass substrate after the junction was about 3 mass % in the neighborhood of the joined surface and about 6 mass % on the back surface. Consequently, the alkali concentration on the back surface was about twice that on the joined surface.
  • the opaque GaAs substrate 11 and the GaAs buffer layer 130 were selectively removed by the use of a known ammonia-based etchant.
  • a first ohmic electrode 15 was formed through vacuum-depositing an AuGe alloy till a thickness of 0.3 ⁇ m. This electrode was given the work of patterning by using a common photolithographic means to give rise to the linear n-type ohmic electrode 15 of a triangular shape having a line width of about 8 ⁇ m.
  • a metal reflecting layer 14 made of gold (Au) in a thickness of 1.5 ⁇ m was formed by the technique of vacuum deposition.
  • Au gold
  • rhodium (Rh) may be used in the place of the gold.
  • the compound semiconductor layer 13 was subjected first to the work of patterning and then to the work of selective etching with a bromine-based etchant till the GaP layer 135, i.e. an electric current dispersion layer, was exposed in the fan-shaped region 150 ⁇ m in radius to allow the formation of the second electrode.
  • a bromine-based etchant i.e. an electric current dispersion layer
  • a pattern was formed on the surface of the GaP layer 135 in a fan-shaped region measuring 130 ⁇ m in radius.
  • the resist surface of the pattern was clad with a gold-beryllium alloy film having a thickness of 0.5 ⁇ m and a gold film having a thickness of 1 ⁇ m by an ordinary technique of vacuum evaporation in popular use. Subsequently, the resist was removed by the known liftoff technique to give rise to a fan-shaped second electrode 16.
  • the compound semiconductor layer was subjected to an alloying heat treatment in a current of nitrogen at 450°C for 10 minutes to form a low-resistance ohmic contact between the first and second electrodes and the compound semiconductor layer.
  • a semiconductor light-emitting diode 10 was obtained by forming the first electrode 15 furnished with the metal reflecting layer 14 and the second electrode 16 as described above, removing by etching the compound semiconductor layer in the region destined to be cut into chips and consequently exposing the glass surface, and cutting what remained into pieces of the shape of a diode by the ordinary scribing technique.
  • the semiconductor light-emitting diode 10, as viewed in a plan view illustrated in Fig. 1, is the square having a side of 300 ⁇ m and a thickness of about 160 ⁇ m.
  • a light-emitting diode lamp 20 of the flip chip structure assembled using the semiconductor light-emitting diode 10 will be described below with reference to the plan view of Fig. 6 and the cross-sectional view of Fig. 7.
  • a ball bump 46 of gold was formed on a first electrode terminal 44 and a second electrode terminal 43 which were formed on a substrate 45, and the second electrode 16 and the metal reflecting layer 14 of the light-emitting diode 10 were brought into contact with the gold bump 46 and connected thereto by contact bonding. Then, the joint consequently formed was sealed with a transparent epoxy resin 41 to complete manufacture of the light-emitting diode (LED) lamp 20.
  • the light-emitting part mentioned above was described as using a double hetero structure of AlGalnP, a light-emitting part utilizing a known technique, such as the MQW structure, acquires the effect of this invention.
  • the n-type ohmic electrode 15 was formed in a triangular shape in the preceding Example, it is commendable to form such a varying electrode pattern as illustrated in Fig. 8 through Fig. 13 to ensure uniform flow of electric current to the light-emitting part.
  • the chip may be formed in the shape of a triangle or a quadrangle, whichever fits the occasion better.
  • n-electrode the electrode 15 for the n-type region (hereinafter referred to as "n-electrode") disposed as separated by an equal distance from the electrode 16 for the p-type region (hereinafter referred to as "p-electrode") in order to allow uniform flow of electric current to the n-electrode.
  • the electrode pattern illustrated in Fig. 9 had the p-electrode formed in the shape of a mesh in order to uniformize the potential exerted on the n-electrode.
  • the electrode pattern illustrated in Fig. 10 had the part of a decreased distance between the electrodes thinned in order to offset the area and the distance and ensure uniform flow of electric current.
  • the electrode pattern illustrated in Fig. 12 had a bilaterally or vertically symmetrical shape in order to uniformize the electric current.
  • the electrode pattern illustrated in Fig. 13 had the p-electrode formed in the shape of an array of stepping-stones in order to uniformize the electric current.
  • a structure obtained by covering the n-electrode 15 and the p-electrode 16 with a gold electrode and connecting the gold electrode to external electrodes is still capable of feeding an electric current.
  • Example 2 A junction was carried out by following the procedure of Example 1 while applying a pressure of 2 kg/cm 2 (19.8 N/cm 2 ) during the junction of positive electrodes. The other component steps were the same as those of Example 1.
  • the forward-direction voltage (V f : per 20 mA) during the flow of an electric current of 20 mA in the forward direction was about 2.0 V.
  • the intensity of light emission at this time was such as to produce a degree of luminance of 170 mcd.
  • Comparative Examples 4 and 5 the anode junction was carried out under conditions for largely varying the coefficient of thermal expansion of glass from that of a semiconductor layer. The samples sustained a crack during the course of the junction and failed to produce a diode. In Comparative Example 6, the junction was attempted under conditions allowing the semiconductor layer to have a high surface roughness. The sample sustained separation during the course of the removal of the substrate and failed to produce a light-emitting diode. In Comparative Example 7, a semiconductor light-emitting diode of the square having a side of 300 ⁇ m was manufactured in an ordinary structure illustrated in Fig. 4 and Fig. 5 using the same epitaxial wafer as in Example 1 while omitting the removal of an opaque substrate and the junction of a glass substrate. Fig.
  • FIG. 4 is a plan view of the semiconductor light-emitting diode manufactured in Comparative Example 7, and Fig. 5 is a cross section taken through Fig. 4 along line V-V.
  • reference numeral 23 denotes a semiconductor layer, 25 a first ohmic electrode, and 26 a second ohmic electrode formed on the back surface of a GaAs semiconductor substrate 21.
  • the upper ohmic electrode 25 was joined by gold wire bonding.
  • the first ohmic electrode 25 was formed in the shape of a circle 130 ⁇ m in diameter for the purpose of securing an area necessary for the junction.
  • a p-type ohmic electrode made of a gold-beryllium alloy and intended as the first ohmic electrode 25 was formed in a thickness of 0.3 ⁇ m, and gold was deposited in a thickness of 1 ⁇ m by the technique of vacuum evaporation.
  • the coated semiconductor layer 23 was subjected to the work of patterning to give rise to the first ohmic electrode 25 measuring 130 ⁇ m in diameter.
  • the semiconductor light-emitting diode of this invention accomplishes addition to luminance because the removal of the opaque substrate and the application of the transparent substrate result in eliminating the absorption of light by the semiconductor substrate and the provision of part of the surface of the compound semiconductor layer with an ohmic electrode and a metal reflecting layer results in enabling the light from the light-emitting part to be drawn out efficiently. It is plain that the present invention can be applied not only to the light-emitting diode in the infrared region and the visible light region but also to the light-emitting diode in the far infrared region and the near ultraviolet region.
  • the adoption of the flip chip structure brings such effects as facilitating the assemblage of a lamp, shunning breakage of a wire and exalting the reliability.

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Abstract

L'invention concerne une DEL (10) comprenant une couche semi-conductrice composée (13) contenant un élément électroluminescent et un substrat de verre alcalin (150) contenant au moins 1 % en masse d'un élément sélectionné parmi le sodium, le calcium, le baryum et le potassium, et transparent à la longueur d'onde électroluminescente dudit élément. Le substrat est fixé ou en contact avec la couche semi-conductrice. Dans un procédé de production de la diode (10), la couche semi-conductrice (13) est formée sur un substrat semi-conducteur (11) non transparent à la longueur d'onde, la couche semi-conductrice formée et le substrat de verre alcalin sont couplés selon un processus de jonction d'anode, le substrat non transparent est éliminé, une première électrode ohmique (15) ayant une première polarité est formée sur une partie de la surface principale de la couche semi-conductrice, une seconde électrode ohmique (16) est formée sur la couche semi-conductrice ayant une seconde polarité, et la première électrode ohmique et la couche semi-conductrice sont recouvertes d'une couche (14) réfléchissant le métal.
PCT/JP2004/003039 2003-03-13 2004-03-09 Diode electroluminescente et procede de production Ceased WO2004082035A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/548,534 US20060237741A1 (en) 2003-03-13 2004-03-09 Light-emitting diode and method for production thereof
DE112004000426T DE112004000426T5 (de) 2003-03-13 2004-03-09 Lichtemittierende Diode und Verfahren zu deren Herstellung

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2003-067428 2003-03-13
JP2003067428 2003-03-13
US45558603P 2003-03-19 2003-03-19
US60/455,586 2003-03-19
JP2003-408246 2003-05-12
JP2003408246 2003-12-05
US53022903P 2003-12-18 2003-12-18
US60/530,229 2003-12-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100705226B1 (ko) * 2005-12-15 2007-04-06 엘지전자 주식회사 삼차원 구조의 발광층을 구비한 발광 소자 및 그의 제조방법
US7915619B2 (en) 2005-12-22 2011-03-29 Showa Denko K.K. Light-emitting diode and method for fabrication thereof

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