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WO2004082008A8 - Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法 - Google Patents

Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法

Info

Publication number
WO2004082008A8
WO2004082008A8 PCT/JP2004/003258 JP2004003258W WO2004082008A8 WO 2004082008 A8 WO2004082008 A8 WO 2004082008A8 JP 2004003258 W JP2004003258 W JP 2004003258W WO 2004082008 A8 WO2004082008 A8 WO 2004082008A8
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
frequency
cvd apparatus
upper electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/003258
Other languages
English (en)
French (fr)
Other versions
WO2004082008A1 (ja
Inventor
Etsuo Wani
Katsuo Sakai
Seiji Okura
Masaji Sakamura
Kaoru Abe
Hitoshi Murata
Kenji Kameda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Research Institute of Innovative Technology for the Earth RITE
Original Assignee
Research Institute of Innovative Technology for the Earth RITE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Institute of Innovative Technology for the Earth RITE filed Critical Research Institute of Innovative Technology for the Earth RITE
Priority to US10/548,873 priority Critical patent/US20060201533A1/en
Priority to EP04720167.8A priority patent/EP1612857B1/en
Publication of WO2004082008A1 publication Critical patent/WO2004082008A1/ja
Publication of WO2004082008A8 publication Critical patent/WO2004082008A8/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2004/003258 2003-03-14 2004-03-12 Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法 Ceased WO2004082008A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/548,873 US20060201533A1 (en) 2003-03-14 2004-03-12 Cvd apparatus and method for cleaning cvd apparatus
EP04720167.8A EP1612857B1 (en) 2003-03-14 2004-03-12 Cvd apparatus and method for cleaning cvd apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003-070337 2003-03-14
JP2003070337 2003-03-14
JP2003187141A JP4264479B2 (ja) 2003-03-14 2003-06-30 Ｃｖｄ装置のクリーニング方法
JP2003-187141 2003-06-30

Publications (2)

Publication Number Publication Date
WO2004082008A1 WO2004082008A1 (ja) 2004-09-23
WO2004082008A8 true WO2004082008A8 (ja) 2004-12-29

Family

ID=32992979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/003258 Ceased WO2004082008A1 (ja) 2003-03-14 2004-03-12 Ｃｖｄ装置及びｃｖｄ装置のクリーニング方法

Country Status (4)

Country Link
US (1) US20060201533A1 (ja)
EP (1) EP1612857B1 (ja)
JP (1) JP4264479B2 (ja)
WO (1) WO2004082008A1 (ja)

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JP2006066540A (ja) 2004-08-25 2006-03-09 Tokyo Electron Ltd 薄膜形成装置の洗浄方法及び薄膜形成装置
US7494943B2 (en) * 2005-10-20 2009-02-24 Tokyo Electron Limited Method for using film formation apparatus
JP4890991B2 (ja) 2006-07-31 2012-03-07 株式会社リコー 定着装置、これを用いた画像形成装置
US20080099450A1 (en) * 2006-10-30 2008-05-01 Applied Materials, Inc. Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution
JP2009152539A (ja) * 2007-11-30 2009-07-09 National Institute Of Advanced Industrial & Technology 半導体デバイスの連続製造方法及びチャンバー
JP4531833B2 (ja) * 2007-12-05 2010-08-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びクリーニング方法
CN104979188A (zh) * 2007-12-21 2015-10-14 苏威氟有限公司 用于生产微机电系统的方法
US8083859B2 (en) 2008-05-30 2011-12-27 Applied Materials, Inc. Arrangement and method for removing alkali- or alkaline earth-metals from a vacuum coating chamber
EP2130940B1 (en) 2008-05-30 2017-04-05 Applied Materials, Inc. Arrangement and method for removing alkali- or alkaline earth-metals from a vacuum coating chamber
CN102197714A (zh) * 2008-10-21 2011-09-21 应用材料股份有限公司 清洁腔室及工艺所用的等离子体源
JP2012507834A (ja) * 2008-11-04 2012-03-29 フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ 平面基板をプラズマ加工する方法および装置
JP2010182937A (ja) * 2009-02-06 2010-08-19 Sharp Corp プラズマクリーニング方法
US20120211023A1 (en) * 2009-10-30 2012-08-23 Solvay Fluor Gmbh Method for Removing Deposits
CN102098863B (zh) * 2009-12-14 2013-09-11 北京北方微电子基地设备工艺研究中心有限责任公司 用于等离子体加工设备的电极板和清除工艺沉积物的方法
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
JP2012015411A (ja) * 2010-07-02 2012-01-19 Tokyo Electron Ltd 半導体装置の製造方法及び半導体装置
CN103037989A (zh) * 2010-08-25 2013-04-10 琳德股份公司 使用分子氟的原位激活的沉积腔室清洁
US9017486B2 (en) 2010-09-09 2015-04-28 International Business Machines Corporation Deposition chamber cleaning method including stressed cleaning layer
JP5904877B2 (ja) * 2012-05-29 2016-04-20 大陽日酸株式会社 炭化珪素除去方法
JP2013251325A (ja) * 2012-05-30 2013-12-12 Taiyo Nippon Sanso Corp 炭化珪素除去装置及び炭化珪素除去方法
JP5973850B2 (ja) * 2012-09-03 2016-08-23 大陽日酸株式会社 クリーニング終点検知方法
US10724137B2 (en) * 2013-02-05 2020-07-28 Kokusai Eletric Corporation Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and cleaning completion determining method
JP5988102B2 (ja) * 2013-03-01 2016-09-07 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法
US10121708B2 (en) * 2015-11-17 2018-11-06 Lam Research Corporation Systems and methods for detection of plasma instability by optical diagnosis
US10784091B2 (en) 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
US10529581B2 (en) * 2017-12-29 2020-01-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications
JP7091198B2 (ja) * 2018-09-11 2022-06-27 キオクシア株式会社 プラズマ処理装置および半導体装置の製造方法
CN111370282B (zh) * 2018-12-26 2022-06-24 江苏鲁汶仪器有限公司 一种等离子增强化学气相沉积腔室的清洗方法
KR102783700B1 (ko) * 2020-01-10 2025-03-21 주성엔지니어링(주) 챔버 세정 방법
JP7433154B2 (ja) * 2020-07-16 2024-02-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
CN112813415A (zh) * 2020-12-31 2021-05-18 拓荆科技股份有限公司 腔体内的清洁方法
JP2024081471A (ja) 2022-12-06 2024-06-18 東京エレクトロン株式会社 プラズマ処理装置及びクリーニング方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01113332U (ja) * 1988-01-26 1989-07-31
JPH07288248A (ja) * 1994-04-19 1995-10-31 Toshiba Corp 半導体素子用プラズマ装置
JP3350264B2 (ja) * 1994-12-22 2002-11-25 松下電器産業株式会社 プラズマクリーニング方法
JP3696983B2 (ja) * 1996-06-17 2005-09-21 キヤノン株式会社 プラズマ処理方法およびプラズマ処理装置
JPH1072672A (ja) * 1996-07-09 1998-03-17 Applied Materials Inc 非プラズマ式チャンバクリーニング法
JPH11204436A (ja) * 1998-01-16 1999-07-30 Sharp Corp 電子デバイス製造装置
IL140055A0 (en) * 1998-06-12 2002-02-10 On Line Techn Inc Method and apparatus for determining processing chamber cleaning or wafer etching endpoint
JP4112198B2 (ja) * 2000-09-11 2008-07-02 財団法人地球環境産業技術研究機構 クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
US6932092B2 (en) * 2002-11-22 2005-08-23 Applied Materials, Inc. Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy

Also Published As

Publication number Publication date
US20060201533A1 (en) 2006-09-14
JP4264479B2 (ja) 2009-05-20
EP1612857A1 (en) 2006-01-04
EP1612857A4 (en) 2009-02-25
WO2004082008A1 (ja) 2004-09-23
JP2004343026A (ja) 2004-12-02
EP1612857B1 (en) 2018-08-01

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