[go: up one dir, main page]

WO2004072323A3 - Four a haute reflectivite fonctionnant a la pression atmospherique empechant la contamination des pieces - Google Patents

Four a haute reflectivite fonctionnant a la pression atmospherique empechant la contamination des pieces Download PDF

Info

Publication number
WO2004072323A3
WO2004072323A3 PCT/US2004/003145 US2004003145W WO2004072323A3 WO 2004072323 A3 WO2004072323 A3 WO 2004072323A3 US 2004003145 W US2004003145 W US 2004003145W WO 2004072323 A3 WO2004072323 A3 WO 2004072323A3
Authority
WO
WIPO (PCT)
Prior art keywords
heating elements
furnace
temperature
atmospheric pressure
work piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/003145
Other languages
English (en)
Other versions
WO2004072323B1 (fr
WO2004072323A2 (fr
Inventor
Nicholas Gralenski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solaicx Inc
Original Assignee
Solaicx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solaicx Inc filed Critical Solaicx Inc
Publication of WO2004072323A2 publication Critical patent/WO2004072323A2/fr
Publication of WO2004072323A3 publication Critical patent/WO2004072323A3/fr
Publication of WO2004072323B1 publication Critical patent/WO2004072323B1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
    • F27D7/02—Supplying steam, vapour, gases or liquids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00—Cooling of furnaces or of charges therein
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F27D2099/0008—Resistor heating
    • F27D2099/0011—The resistor heats a radiant tube or surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Furnace Details (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
  • Resistance Heating (AREA)

Abstract

Cette invention concerne un four d'une conception thermique nouvelle. La température des éléments chauffants est réduite par rapport à celles de fours classiques, la température de traitement pouvant être par ailleurs réglée avec précision dans la plage des 1000 - 1400 °C. Le four compte une pluralité d'éléments chauffants Kanthal disposés selon un ensemble plan aussi près que possible de la zone de travail, ce qui permet de se rapprocher d'un état isotherme pour cette dernière. Des moyens permettent d'amener les éléments chauffants dans la chambre de travail. Cette chambre est par ailleurs réalisée en aluminium, avec des surfaces intérieures fortement polies qui reflètent la chaleur. Les parois de la chambre ont une capacité de refroidissement intégrée assurant l'évacuation de la chaleur non réfléchie. De type modulaire, les éléments chauffants peuvent être retirés et remis en place sans désassemblage du four. Les éléments chauffants sont du type linéaire, et non à enroulements et la température est gérée directement par mesure de la résistance électrique des fils de Kanthal.
PCT/US2004/003145 2003-02-07 2004-02-03 Four a haute reflectivite fonctionnant a la pression atmospherique empechant la contamination des pieces Ceased WO2004072323A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44556203P 2003-02-07 2003-02-07
US60/445,562 2003-02-07

Publications (3)

Publication Number Publication Date
WO2004072323A2 WO2004072323A2 (fr) 2004-08-26
WO2004072323A3 true WO2004072323A3 (fr) 2004-12-09
WO2004072323B1 WO2004072323B1 (fr) 2005-02-17

Family

ID=32869380

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/003145 Ceased WO2004072323A2 (fr) 2003-02-07 2004-02-03 Four a haute reflectivite fonctionnant a la pression atmospherique empechant la contamination des pieces

Country Status (1)

Country Link
WO (1) WO2004072323A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010008084A1 (de) * 2010-02-15 2011-08-18 Leybold Optics GmbH, 63755 Vorrichtung zur thermischen Behandlung von Substraten
DE102010016511A1 (de) 2010-04-19 2011-10-20 Roth & Rau Ag Thermische Isolation
DE102010016509A1 (de) 2010-04-19 2011-10-20 Roth & Rau Ag Durchlaufanlage sowie Verfahren zum Gasmanagement und zur Temperatursteuerung in einer Durchlaufanlage
DE102010016506A1 (de) 2010-04-19 2011-10-20 Roth & Rau Ag Transportsystem mit beheizbaren Transportrollen
KR101155813B1 (ko) * 2011-08-24 2012-06-12 (주)써모니크 그라파이트 히터로

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468260A (en) * 1982-06-22 1984-08-28 Ushio Denki Kabushiki Kaisha Method for diffusing dopant atoms
US4481406A (en) * 1983-01-21 1984-11-06 Varian Associates, Inc. Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
EP0399662A2 (fr) * 1989-05-01 1990-11-28 AT&T Corp. Procédé de revenu de semi-conducteurs
US5762713A (en) * 1995-11-28 1998-06-09 Texas Instruments Incorporated RTP lamp design for oxidation and annealing
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
WO1999002757A1 (fr) * 1997-07-11 1999-01-21 Asm America, Inc. Surface reflectrice pour parois de reacteurs de depot chimique en phase vapeur
WO2001097271A1 (fr) * 2000-06-09 2001-12-20 Primaxx, Inc. Procede et dispositif de chauffage rayonnant direct uniforme dans un reacteur de traitement thermique rapide

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468260A (en) * 1982-06-22 1984-08-28 Ushio Denki Kabushiki Kaisha Method for diffusing dopant atoms
US4481406A (en) * 1983-01-21 1984-11-06 Varian Associates, Inc. Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
EP0399662A2 (fr) * 1989-05-01 1990-11-28 AT&T Corp. Procédé de revenu de semi-conducteurs
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US5762713A (en) * 1995-11-28 1998-06-09 Texas Instruments Incorporated RTP lamp design for oxidation and annealing
WO1999002757A1 (fr) * 1997-07-11 1999-01-21 Asm America, Inc. Surface reflectrice pour parois de reacteurs de depot chimique en phase vapeur
WO2001097271A1 (fr) * 2000-06-09 2001-12-20 Primaxx, Inc. Procede et dispositif de chauffage rayonnant direct uniforme dans un reacteur de traitement thermique rapide

Also Published As

Publication number Publication date
WO2004072323B1 (fr) 2005-02-17
WO2004072323A2 (fr) 2004-08-26

Similar Documents

Publication Publication Date Title
JP6072034B2 (ja) ツール温度の制御
WO2002065029A8 (fr) Dispositif thermoelectrique a efficacite amelioree faisant appel a un flux de chaleur convectif
WO2004104493A3 (fr) Procede de regulation thermique uniforme d'un substrat ; unite de chauffage integree et unite d'administration de medicaments recourant a ce procede
WO2008039611A3 (fr) support de substrat thermorÉgulÉ avec couche d'isolation non homogÈne pour systÈme de traitement des substrats
WO2004008054A9 (fr) Element chauffant variable destine a des gammes de temperatures basses a elevees
AU2003292543A1 (en) Integrated thermoelectric module
WO2004072323A3 (fr) Four a haute reflectivite fonctionnant a la pression atmospherique empechant la contamination des pieces
CN219792989U (zh) 一种核酸扩增装置
CN109115345A (zh) 一种红外线测温装置以及热处理设备
WO2004088216A1 (fr) Refroidisseur pour un article fonctionnant a basse temperature
CN101371331B (zh) 磁性退火工具热交换系统及处理工艺
CN203964663U (zh) 新型测温加热炉
US20020008334A1 (en) Method for controlling the firing of ceramics
CN102809435A (zh) 基于脉管制冷机的面源黑体辐射源
WO2011129689A1 (fr) Dispositif d'etalonnage pour thermometres
AU2003226228A1 (en) Single chamber solid oxide fuel cell architecture for high temperature operation
CN205227497U (zh) 纳米陶瓷芯暖气片
WO2007031354A3 (fr) Procede de fonctionnement d'alimentations a decoupage
JP3763478B2 (ja) 熱伝導を利用した温度環境実験機とその制御方法及び温度特性の測定方法
CN208815024U (zh) Pcr基因扩增仪
EP3438597B1 (fr) Système d'étalonnage de température comportant un ensemble de refroidissement séparable
CN213012879U (zh) 一种pcr扩增仪
CN203759167U (zh) 温差电致冷组件加速寿命自动试验装置
JP4510393B2 (ja) 温度調整方法
US9097463B2 (en) Housing for heating and use method of the same, heating jig and use method of the same, and operation method of heating device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
B Later publication of amended claims

Effective date: 20041026

122 Ep: pct application non-entry in european phase