WO2004070801A1 - Fluid control device and heat treatment device - Google Patents
Fluid control device and heat treatment device Download PDFInfo
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- WO2004070801A1 WO2004070801A1 PCT/JP2003/001338 JP0301338W WO2004070801A1 WO 2004070801 A1 WO2004070801 A1 WO 2004070801A1 JP 0301338 W JP0301338 W JP 0301338W WO 2004070801 A1 WO2004070801 A1 WO 2004070801A1
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- control device
- fluid control
- gas
- gas line
- region
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
- F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
Definitions
- the present invention relates to a fluid control device and a heat treatment device including the fluid control device.
- a film is formed on a semiconductor device using a combination * of a plurality of types of gases in a film forming process.
- various types of gases eg, H 2 , ⁇ 2,
- FIG. 10 is a system diagram of a conventional gas supply system that supplies a plurality of types of gases into a reaction processing furnace of a semiconductor manufacturing apparatus.
- the gas supply system is composed of a plurality of processing gas lines a to d for supplying different gases, respectively, and a purge gas line P for supplying a purge gas.
- Each of the processing gas lines a to d is provided with a flow controller 1 such as a mass flow controller.
- a flow controller 1 such as a mass flow controller.
- a switching valve 2 On the upstream side of the flow controller 1, a switching valve 2, a filter 3, a pressure regulator 4, a pressure sensor 5, and a control valve 2a are provided.
- a branch line p branched from the purge gas line p, is connected to the primary side of the flow controller 1.
- one gas line is provided for one kind of gas, and one flow controller is provided for each gas line. That is, in order to supply various types of gases, a number of gas lines and flow controllers corresponding to the number of gas types are used. This leads to problems such as an increase in the cost and footprint of the gas supply system.
- Japanese Patent Publication Japanese Patent Application Laid-Open Publication No. 2000-0-323464 discloses that a single flow controller 1 is shared by a plurality of gas supply lines a, b, and c as shown in FIG.
- a gas supply system is disclosed.
- the gas supply system shown in Fig. 11 pumps different gases.
- a plurality of processing gas lines a to d for supplying the same and a purge gas line p for supplying a purge gas p.
- a switching valve 7, a filter 8, a pressure regulator 10 and a pressure sensor 9 are provided in each of the gas lines a to d.
- the gas line a is provided with a flow controller 6 such as a mass storage controller shared by the gas lines a to c.
- the gas line d is provided with a dedicated flow controller 6.
- a line branching from the purge gas line p: p ′ is connected to the primary side of each flow controller 6.
- each gas line ac is provided with a switching valve 7, a filter 8, a pressure regulator 10 and a pressure sensor 9, so that the system can be sufficiently miniaturized. Not achieved. Disclosure of the invention
- the present invention provides a first area in which a flow rate control means is arranged, and at least one of a pressure adjusting means and a pressure monitoring means which is located on the upstream side of the first area. And a plurality of connection means provided upstream of the second area of the gas line and capable of connecting a fluid supply source to the gas line.
- a fluid control device is provided.
- the gas line includes a first portion including the first and second regions, and a second portion extending from an upstream end of the first portion in a direction orthogonal to the first portion.
- the plurality of connection means are provided in the second portion.
- the present invention also provides a plurality of gas lines extending in a first direction parallel to each other at least on a first plane, wherein each of the plurality of gas lines has a flow control A first area in which the means are arranged, and a second area which is located on the upstream side of the first area and in which at least one of the pressure adjusting means and the pressure monitoring means is arranged.
- a plurality of gas lines, and a plurality of connection means provided on at least one gas line of the plurality of gas lines, to which a fluid supply source can be connected.
- the gas line includes a first portion including the first region and the second region and extending in the first direction on the first plane, and a first portion extending from an upstream end of the first portion.
- a second portion extending on a second plane orthogonal to the first plane in a second direction orthogonal to the first direction, wherein the plurality of connecting means are connected to the second portion;
- Provided is a fluid control device.
- the connection means includes a plurality of three-way valves provided in the gas line.
- each said three-way valve has a first, a second and a third port respectively, the first port of each said three-way valve being adapted to be connected to a fluid supply, respectively.
- the second port of the upstream three-way valve among the three-way valves adjacent to each other is connected to the third port of the downstream three-way valve, and the third port of the most downstream three-way valve is connected to the third port.
- the purge gas is supplied to the second port of the three-way valve, which is connected to the second region of the gas line and is the most upstream.
- the present invention provides a heat treatment apparatus including a fluid control device having the above-described configuration, and a reaction processing furnace to which a fluid is supplied via the fluid control device.
- FIG. 1 is a system diagram showing one embodiment of a fluid control device according to the present invention.
- FIG. 2 is a cross-sectional view illustrating a configuration of a gas line to which a plurality of gas supply sources are connected in the fluid control device illustrated in FIG. 1, and is a diagram illustrating a state in which a processing gas is passed through the gas line.
- FIG. 3 is a front view of the gas line shown in FIG. 2 as viewed from the direction of arrow III.
- FIG. 4 is the same cross-sectional view as FIG. 2 and shows a state in which a purge gas is passed through a gas line.
- FIG. 5 is a front view of the gas line shown in FIG. 4 as viewed from the direction of arrow V.
- FIG. 6 is a view showing another embodiment of the gas line shown in FIG. 2, and is a view showing a state in which the processing gas is passed through the gas line.
- FIG. 7 is a diagram showing a cross section taken along line VII-VII of FIG.
- FIG. 8 is the same cross-sectional view as FIG. 6, and shows a state in which a purge gas is passed through a gas line.
- FIG. 9 is a diagram showing a cross section taken along line IX-IX of FIG.
- FIG. 10 is a schematic system diagram showing a conventional gas supply system.
- FIG. 11 is a schematic system diagram showing another conventional gas supply system. Description of the preferred embodiment
- FIG. 1 is a system diagram showing an embodiment of a heat treatment apparatus provided with a fluid control device according to the present invention.
- the heat treatment apparatus includes a gas supply system including a fluid control device 11, and a reaction processing furnace 32.
- the reaction processing furnace 32 is for accommodating a substrate and subjecting the substrate to an oxidation treatment or a heat treatment such as a CVD process.
- a known suitable furnace can be used.
- the fluid control device 11 includes a plurality of equally spaced gas lines 12, 13, and 23 for supplying gas to the reaction processing furnace 32.
- Each gas line extends in a first vertical plane that extends generally vertically.
- a leftmost line 12 is a purge gas line for supplying a purge gas P such as N 2 .
- the purge gas line 12 has a gas supply port 12a, a manual valve 12b, a filter 12c, a pressure regulator 12d, a pressure sensor 12e, a control valve 12f a flow controller 1. 2 g and the fill 12h are arranged in this order from the upstream side.
- Gas line 1 3 is the process gas line for supplying a plurality of types of processing gases (e.g., H 2, 0 2, N 2, S i H , etc.).
- the processing gas line 13 has a flow control system region (first region) in which the flow controller 13 g is provided, and a processing gas line 13 is provided upstream of the flow controller.
- a pressure control system region 14 (second region).
- the manual valve 13b, fill 13c, pressure A regulator 13d, a pressure sensor 13e, a control valve 13f, a filter 13h and a control valve 13i are provided.
- a plurality of gas supply sources A, B, and C are connected to the upstream end of the gas line 13.
- the gas line 13 extending in the vertical direction changes its direction by approximately 90 degrees at the lower end which is the upstream end thereof, and extends in the direction orthogonal to the first vertical plane.
- the horizontal extension of the gas line 13 is referred to as an extension 15 of the gas line 13.
- the vertically extending portion and the extending portion 15 of the gas line 13 are located in a second vertical plane orthogonal to the first vertical plane and extending in the vertical direction.
- the first ports 17 a, 18 a, 19 a of the directional valves 17, 18, 19 are gas supply pipes 16 a, 1, respectively connected to the gas sources A, B, C 6 b and 16 c are connected to each other.
- the second and third ports 18b and 18c of the three-way valve 18 are connected to the third port 17c of the three-way valve 17 and the second port 19b of the three-way valve 19, respectively.
- the second port 17 b of the three-way valve 17 is connected to a line 22 for supplying the noz gas P via a two-way valve 20 with an actuator and a check valve 21.
- the third port 19 c of the three-way valve 19 communicates with a vertically extending portion of the gas line 13.
- the second and third ports 17b, 17c, 18b, 18c, 19b, and 19c of the three-way valves 17, 18, and 19 are always in communication.
- the actuator of each three-way valve 17, 18, 18, 19 moved a valve in the form of a diaphragm built in the three-way valve, and the first port was in communication with the second and third ports. And the communication is interrupted.
- a gas line 23 is disposed adjacent to the gas line 13. Gas is supplied to the gas line 23 from the gas supply source D. As with gas line 13, gas supply line 23a, manual valve 23b, fill valve 23c, pressure regulator 23d, pressure sensor 23e, control A valve 23 f and a flow controller 23 g are provided.
- the purge gas line 12 is connected to the line 22 described above.
- This line 22 is connected to the second port 17 b of the three-way valve 17 via the two-way valve 20.
- a branch line 25 further branches from the purge gas line 12.
- the branch line 25 is connected to the primary side of the flow controller 13 g of the gas line 13, in other words, to the downstream side of the pressure control system region 14.
- the branch line 25 is provided with a control valve 25a and a check valve 25b. If it is not necessary to purge the pressure control system area 14 such as when supplying the same type of gas to the reaction furnace 32 multiple times from the gas line 13, the control valve 13 f is closed and the branch line 25 is used.
- a purge gas is sent to the gas line 13 so that only the gas line 13 on the downstream side of the pressure control system area 14 can be purged.
- the branch line 25 is further branched on the way and connected to the primary side of the flow controller 23 g of the gas line 23.
- the above-described fluid control device 11 is configured as a single integrated structure unit 26.
- the integrated structure unit 26 has a base plate 27 extending along the first vertical plane and a base plate 28 extending along the second vertical plane.
- the width of the base plate 28 is equal to the width of the gas line 13.
- a plurality of joint blocks 26a are mounted on the base plates 27 and 28.
- Functional members such as, 18, 19 and the two-way valve 20 are mounted on a block (eg, valve block 26b).
- the blocks for these functional members are airtightly connected to each other via the joint block 26a.
- the three-way valve 18 When supplying the processing gas B to the reaction processing furnace 32, the three-way valve 18 is opened with the two-way valve 20 closed.
- the processing gas B is introduced into the gas line 13 from the extension 15 and is controlled to a predetermined pressure when passing through the pressure control system region 14 of the gas line 13, and is further controlled to a predetermined flow rate by the flow controller 13. And finally introduced into the processing reactor 32 (see FIGS. 2 and 3).
- one (one system) gas line is provided with a flow control region and a pressure control region, and this one gas supply line is used for supplying a plurality of types of gas. Shared. For this reason, a significant cost reduction of the fluid control device can be achieved.
- the fluid control device can be made more compact by reducing the number of lines. Specifically, the fluid control device can be downsized by the width X shown in FIG. 1 as compared with the conventional device shown in FIGS. 10 and 11. Furthermore, the addition of gas species can be performed very easily.
- the following conditions are required for sharing a gas line: (1) Even if gases are mixed, they do not react in the gas line; (2) Gas is supplied to the reaction furnace simultaneously. (3) The flow ranges of each gas are close.
- the combination of processing gases A, B, and C is a combination of SiH 4 gas, Si 2 H 2 Cl gas, and Si 2 C 16 gas, or a combination of NH 3 gas, N 2 H 4 gas, and NXHY gas.
- a plurality of gas supply sources are connected to only one gas line 13, but a plurality of gas supply sources can be connected to a plurality of gas lines.
- the first gas line 13 is connected to a SiH 4 gas supply source, a Si 2 H 2 C 1 gas supply source and a Si 2 C 16 gas supply source, and the first gas line 13 is connected to the first gas line 13.
- An NH 3 gas supply source, an N 2 H 4 gas supply source and an NXHY gas supply source can be connected to a second gas line having a similar configuration.
- a purge gas line 22 is connected to the second gas line in the same manner as the first gas line 13.
- both the pressure regulator 13 d as pressure adjusting means and the pressure sensor 13 e as pressure monitoring means are provided in the pressure control system area. But not limited to this.
- the pressure may not be actively adjusted in such a case. In such a case, the pressure regulator 13 d may not be provided.
- a mass flow controller is used as the flow controllers 12 g, 13 g, and 23 g, but a pressure type flow controller may be used without being limited thereto.
- the digital MFC stores only the flow control characteristic curve corresponding to the reference gas and the reference flow rate.
- one type of reference gas and the conversion factor for that reference flow rate are experimentally obtained in advance.
- an approximate compensation value is calculated from the measured value of the actual gas flow rate and the conversion coefficient, and the flow control characteristic curve is corrected based on the compensation value. Then, control the gas flow. This makes it possible to handle a large number of different gases and a wide flow range.
- FIGS. 6 to 9 show another embodiment of the fluid control device.
- the same members as those shown in FIGS. 1 to 5 are denoted by the same reference numerals, and redundant description will be omitted.
- one gas line 13 is provided with a flow controller 13 g (not shown in FIGS. 6 to 9) such as a mass flow controller and the like.
- the point that the pressure control system region 14 is provided on the upstream side of 13 g is the same.
- the gas line 13 extending on the first vertical plane changes its direction by approximately 90 degrees at the lower end portion which is the upstream end portion thereof, but the first vertical line continues. Extends laterally on a plane.
- the horizontal extension of the gas line 13 is referred to as an extension 30.
- the gas supply pipes 29 a, 29 b, 29 c connected to the processing gas supply sources A, B, C are connected to the extension 30. Purge upstream of extension 30
- the purge gas supply pipe 31 connected to the gas supply source P is connected.
- Each gas supply pipe 29a, 29b, 29c, 31 is provided with a two-way valve 32 (open / close valve).
- the dead region V (gas is supplied) is provided between the downstream side of the two-way valve of the gas supply pipes 29 a, 29 b, and 29 c and the extension 30 of the gas line.
- the gas remains because a stagnation region remains (see Figs. 6 and 7).
- FIGS. 8 and 9 if a purge gas is supplied, the gas remaining in the dead region V cannot be purged.
- FIGS. 6 to 9 different types of gas can be supplied by one (one system) gas line, so that the cost of the fluid control device can be reduced by the embodiment shown in FIGS. Can be achieved in the same manner as described above.
- the embodiment shown in FIGS. 6 to 9 has the effect of reducing the number of lines because the gas line extension 30 extends in the horizontal direction. Is inferior to the embodiment shown in FIGS.
- the embodiment shown in FIGS. 6 to 9 is also inferior to the embodiment shown in FIGS. 1 to 5 in that the dead region V is inevitably generated.
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Abstract
Description
流体制御装置および熱処理装置 技術分野 Fluid control device and heat treatment device
本発明は、 流体制御装置及び該流体制御装置を備えた熱処理装置に関する。 発明の背景 The present invention relates to a fluid control device and a heat treatment device including the fluid control device. Background of the Invention
半導体製造工程の ,,成膜工程では、 複数種のガスを組合せ *て用いて半導体ゥエ ヽ 上に成膜が実施される。 成膜工程では、 多種類のガス (例えば、 H 2, 〇2、In a semiconductor manufacturing process, a film is formed on a semiconductor device using a combination * of a plurality of types of gases in a film forming process. In the film formation process, various types of gases (eg, H 2 , 〇2,
S i H 4、 N 2等) を経時的に切替えて使用したり、 又は、 同一種類のガスを異な る流量で使用することがしばしばある。 (S i H 4 , N 2, etc.) are often used over time, or the same type of gas is used at different flow rates.
図 1 0は、 半導体製造装置の反応処理炉内に複数種のガスを供給する従来のガ ス供給システムの系統図である。 ガス供給システムは、 異なるガスをそれそれが 供給する複数の処理ガスライン a〜dと、 パージガスを供給するパージガスライ ン Pとから構成されている。 FIG. 10 is a system diagram of a conventional gas supply system that supplies a plurality of types of gases into a reaction processing furnace of a semiconductor manufacturing apparatus. The gas supply system is composed of a plurality of processing gas lines a to d for supplying different gases, respectively, and a purge gas line P for supplying a purge gas.
各処理ガスライン a〜dには、 マスフ口一コントローラ等の流量制御器 1が設 けられている。 流量制御器 1の上流側には、 切換弁 2、 フィルタ 3、 圧力調整器 4および圧力センサ 5および制御バルブ 2 aと、 が設けられている。 更に、 パー ジガスライン pより分岐した分岐ライン p, が、 流量制御器 1の一次側に連結さ れている。 Each of the processing gas lines a to d is provided with a flow controller 1 such as a mass flow controller. On the upstream side of the flow controller 1, a switching valve 2, a filter 3, a pressure regulator 4, a pressure sensor 5, and a control valve 2a are provided. Further, a branch line p, branched from the purge gas line p, is connected to the primary side of the flow controller 1.
図 1 0に示すガス供給システムにおいては、 1種類のガスに対して 1つのガス ラインが設けられ、 かつ 1つのガスラインに 1つづつ流量制御器が設けられてい る。 すなわち、 多種類のガスの供給を行うために、.ガスの種類の数に対応した数 のガスラインおよび流量制御器を用いている。 このことは、 ガス供給システムの コスト増およびフットプリントの増大等の問題につながる。 In the gas supply system shown in FIG. 10, one gas line is provided for one kind of gas, and one flow controller is provided for each gas line. That is, in order to supply various types of gases, a number of gas lines and flow controllers corresponding to the number of gas types are used. This leads to problems such as an increase in the cost and footprint of the gas supply system.
日本国特許公報:特開 2 0 0 0— 3 2 3 4 6 4号には、 図 1 1に示すように、 複数のガス供給ライン a, b, cで 1つの流量制御器 1を共用しているガス供給 システムが開示されている。 図 1 1に示すガス供給システムは、 異なるガスをそ れそれが供給する複数の処理ガスライン a〜dと、 パージガス pを供給するパー ジガスライン pとから構成されている。 各ガスライン a〜dには、 切換弁 7、 フ ィル夕 8、 圧力調整器 1 0および圧力センサ 9が設けられている。 ガスライン a には、 ガスライン a〜cで共用するマスフ口一コントローラ等の流量制御器 6が 設けられている。 ガスライン dには、 専用の流量制御器 6が設けられている。 パ ージガスライン pから分岐するライン: p ' が各流量制御器 6の一次側に連結され ている。 Japanese Patent Publication: Japanese Patent Application Laid-Open Publication No. 2000-0-323464 discloses that a single flow controller 1 is shared by a plurality of gas supply lines a, b, and c as shown in FIG. A gas supply system is disclosed. The gas supply system shown in Fig. 11 pumps different gases. And a plurality of processing gas lines a to d for supplying the same and a purge gas line p for supplying a purge gas p. A switching valve 7, a filter 8, a pressure regulator 10 and a pressure sensor 9 are provided in each of the gas lines a to d. The gas line a is provided with a flow controller 6 such as a mass storage controller shared by the gas lines a to c. The gas line d is provided with a dedicated flow controller 6. A line branching from the purge gas line p: p ′ is connected to the primary side of each flow controller 6.
図 1 1に示す構成によれば、 ガスライン a〜cで流量制御器 6を共用している ため、 その分だけガス供給システムのコストダウンおよび小型化を達成すること ができる。 しかし、 図 1 1に示すガス供給システムでは、 各ガスライン a〜cが、 切換弁 7、 フィル夕 8、 圧力調整器 1 0および圧力センサ 9を備えているため、 システムの小型化が十分に達成できていない。 発明の開示 According to the configuration shown in FIG. 11, since the flow controllers 6 are shared by the gas lines a to c, the cost and size of the gas supply system can be reduced by that much. However, in the gas supply system shown in Fig. 11, each gas line ac is provided with a switching valve 7, a filter 8, a pressure regulator 10 and a pressure sensor 9, so that the system can be sufficiently miniaturized. Not achieved. Disclosure of the invention
本発明は、 複数種のガスを制御して供給する装置 (すなわち、 流体制御装置) の小型化および低コスト化を図ることを目的としている。 また、 本発明は、 ガス 種の増減に容易に対応することができる流体制御装置の提供を目的としている。 本発明の更なる目的は、 上述した流体制御装置を備えた熱処理装置を提供するこ とにある。 It is an object of the present invention to reduce the size and cost of a device for controlling and supplying a plurality of types of gases (that is, a fluid control device). Another object of the present invention is to provide a fluid control device that can easily cope with an increase or decrease in the type of gas. A further object of the present invention is to provide a heat treatment apparatus provided with the above-described fluid control device.
上記目的を達成するため、 本発明は、 流量制御手段が配置された第 1の領域と、 前記第 1の領域の上流側に位置するとともに圧力調整手段および圧力監視手段の 少なくともいずれか 1つが配置された第 2の領域と、 を有するガスラインと、 前 記ガスラインの前記第 2の領域の上流側に設けられ、 それそれに流体供給源を接 続可能な複数の接続手段と、 を備えた流体制御装置を提供する。 In order to achieve the above object, the present invention provides a first area in which a flow rate control means is arranged, and at least one of a pressure adjusting means and a pressure monitoring means which is located on the upstream side of the first area. And a plurality of connection means provided upstream of the second area of the gas line and capable of connecting a fluid supply source to the gas line. A fluid control device is provided.
好適には、 前記ガスラインは、 前記第 1および第 2の領域を含む第 1の部分と、 前記第 1の部分の上流端から前記第 1の部分に直交する方向に延びる第 2の部分 とを有しており、 前記複数の接続手段は、 前記第 2の部分に設けられる。 Preferably, the gas line includes a first portion including the first and second regions, and a second portion extending from an upstream end of the first portion in a direction orthogonal to the first portion. And the plurality of connection means are provided in the second portion.
また、 本発明は、 少なくとも第 1の平面上において互いに平行に第 1の方向に 延びる複数のガスラインであって、 これら複数のガスラインの各々が、 流量制御 手段が配置された第 1の領域と、 前記第 1の領域の上流側に位置するとともに圧 力調整手段および圧力監視手段の少なくともいずれか 1つが配置された第 2の領 域と、 を有している、 複数のガスラインと、 前記複数のガスラインのうちの少な くとも 1つのガスラインに設けられ、 それそれに流体供給源を接続可能な複数の 接続手段と、 を備え、 前記少なくとも 1つのガスラインは、 前記第 1の領域およ び第 2の領域を含むとともに前記第 1の平面上において前記第 1の方向に延びる 第 1の部分と、 前記第 1の部分の上流端から前記第 1の平面と直交する第 2の平 面上を前記第 1の方向と直交する第 2の方向に延びる第 2の部分を有しており、 前記複数の接続手段は、 前記第 2の部分に設けられている、 流体制御装置を提供 する。 The present invention also provides a plurality of gas lines extending in a first direction parallel to each other at least on a first plane, wherein each of the plurality of gas lines has a flow control A first area in which the means are arranged, and a second area which is located on the upstream side of the first area and in which at least one of the pressure adjusting means and the pressure monitoring means is arranged. A plurality of gas lines, and a plurality of connection means provided on at least one gas line of the plurality of gas lines, to which a fluid supply source can be connected. The gas line includes a first portion including the first region and the second region and extending in the first direction on the first plane, and a first portion extending from an upstream end of the first portion. A second portion extending on a second plane orthogonal to the first plane in a second direction orthogonal to the first direction, wherein the plurality of connecting means are connected to the second portion; Provided is a fluid control device.
好適には、 前記接続手段は前記ガスラインに設けられた複数の三方弁から構成 される。 この場合、 前記各三方弁はそれそれ第 1、 第 2および第 3のポートを有 し、 前記各三方弁の第 1のポートは、 それそれ流体供給源に接続されるようにな つており、 互いに隣接する三方弁のうちの上流側の三方弁の第 2のポートは下流 側にある三方弁の第 3のポートに接続され、 最も下流側にある三方弁の第 3のポ —トは前記ガスラインの第 2領域に接続され、 最も上流側にある三方弁の第 2の ポートに、 パージガスが供給されるようになっている。 Preferably, the connection means includes a plurality of three-way valves provided in the gas line. In this case, each said three-way valve has a first, a second and a third port respectively, the first port of each said three-way valve being adapted to be connected to a fluid supply, respectively. The second port of the upstream three-way valve among the three-way valves adjacent to each other is connected to the third port of the downstream three-way valve, and the third port of the most downstream three-way valve is connected to the third port. The purge gas is supplied to the second port of the three-way valve, which is connected to the second region of the gas line and is the most upstream.
更に、 本発明は、 上述した構成を有する流体制御装置と、 前記流体制御装置を 介して流体が供給される反応処理炉とを備えた熱処理装置を提供する。 図面の簡単な説明 Further, the present invention provides a heat treatment apparatus including a fluid control device having the above-described configuration, and a reaction processing furnace to which a fluid is supplied via the fluid control device. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本発明による流体制御装置の一実施形態を示す系統図である。 FIG. 1 is a system diagram showing one embodiment of a fluid control device according to the present invention.
図 2は、 図 1に示す流体制御装置において複数のガス供給源が接続されるガス ラインの構成を示す断面図であり、 ガスラインに処理ガスが通されている状態を 示す図である。 FIG. 2 is a cross-sectional view illustrating a configuration of a gas line to which a plurality of gas supply sources are connected in the fluid control device illustrated in FIG. 1, and is a diagram illustrating a state in which a processing gas is passed through the gas line.
図 3は、 図 2に示すガスラインを矢印 II I方向から見た正面図である。 FIG. 3 is a front view of the gas line shown in FIG. 2 as viewed from the direction of arrow III.
図 4は、 図 2と同じ断面図であり、 ガスラインにパージガスが通されている状 態を示す図である。 FIG. 4 is the same cross-sectional view as FIG. 2 and shows a state in which a purge gas is passed through a gas line.
図 5は、 図 4に示すガスラインを矢印 V方向から見た正面図である。 図 6は、 図 2に示すガスラインの他の形態を示す図であり、 ガスラインに処理 ガスが通されている状態を示す図である。 FIG. 5 is a front view of the gas line shown in FIG. 4 as viewed from the direction of arrow V. FIG. 6 is a view showing another embodiment of the gas line shown in FIG. 2, and is a view showing a state in which the processing gas is passed through the gas line.
図 7は、 図 6の VII—VII断面を示す図である。 FIG. 7 is a diagram showing a cross section taken along line VII-VII of FIG.
図 8は、 図 6と同じ断面図であり、 ガスラインにパージガスが通されている状 態を示す図である。 FIG. 8 is the same cross-sectional view as FIG. 6, and shows a state in which a purge gas is passed through a gas line.
図 9は、 図 8の IX— IX断面を示す図である。 FIG. 9 is a diagram showing a cross section taken along line IX-IX of FIG.
図 1 0は、 従来のガス供給システムを示す概略系統図である。 FIG. 10 is a schematic system diagram showing a conventional gas supply system.
図 1 1は、 他の従来のガス供給システムを示す概略系統図である。 好適な実施形態の説明 FIG. 11 is a schematic system diagram showing another conventional gas supply system. Description of the preferred embodiment
本発明の好適な実施形態を図面に基づいて説明する。 ' 図 1は、 本発明による、 流体制御装置を備えた熱処理装置の一実施形態を示す 系統図である。 熱処理装置は、 流体制御装置 1 1を含むガス供給システムと、 反 応処理炉 3 2と、 を備えている。 反応処理炉 3 2は、 基板を収容して該基板に酸 化処理または C VD等の熱処理を行うものであり、 公知の適当な炉を用いること ができる。 A preferred embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a system diagram showing an embodiment of a heat treatment apparatus provided with a fluid control device according to the present invention. The heat treatment apparatus includes a gas supply system including a fluid control device 11, and a reaction processing furnace 32. The reaction processing furnace 32 is for accommodating a substrate and subjecting the substrate to an oxidation treatment or a heat treatment such as a CVD process. A known suitable furnace can be used.
流体制御装置 1 1は、 反応処理炉 3 2にガスを供給するための、 等間隔に配置 された複数のガスライン 1 2、 1 3、 2 3を含む。 各ガスラインは概ね鉛直に延 びる第 1の鉛直平面内で延びている。 The fluid control device 11 includes a plurality of equally spaced gas lines 12, 13, and 23 for supplying gas to the reaction processing furnace 32. Each gas line extends in a first vertical plane that extends generally vertically.
図 1において左端のライン 1 2は、 N 2等のパージガス Pを供給するためのパ —ジガスラインである。 パージガスライン 1 2には、 ガス供給口 1 2 a、 手動バ ルブ 1 2 b、 フィル夕 1 2 c、 圧力調整器 1 2 d、 圧力センサ 1 2 e、 制御バル ブ 1 2 f 流量制御器 1 2 gおよびフィル夕 1 2 hが、 上流側からこの順番で設 けられている。 In FIG. 1, a leftmost line 12 is a purge gas line for supplying a purge gas P such as N 2 . The purge gas line 12 has a gas supply port 12a, a manual valve 12b, a filter 12c, a pressure regulator 12d, a pressure sensor 12e, a control valve 12f a flow controller 1. 2 g and the fill 12h are arranged in this order from the upstream side.
ガスライン 1 3は、 複数種類の処理ガス (例えば、 H 2, 02、 N 2、 S i H な ど) を供給するための処理ガスラインである。 図 1〜図 5に示すように、 処理ガ スライン 1 3は、 流量制御器 1 3 gが設けられた流量制御系領域 (第 1の領域) と、 該流量制御器の上流側に設けられた圧力制御系領域 1 4 (第 2の領域) と、 を有する。 圧力制御系領域 1 4には、 手動バルブ 1 3 b、 フィル夕 1 3 c、 圧力 調整器 1 3 d、 圧力センサ 1 3 e、 制御バルブ 1 3 f、 フィル夕 1 3 hおよび制 御バルブ 1 3 iが設けられている。 Gas line 1 3 is the process gas line for supplying a plurality of types of processing gases (e.g., H 2, 0 2, N 2, S i H , etc.). As shown in FIGS. 1 to 5, the processing gas line 13 has a flow control system region (first region) in which the flow controller 13 g is provided, and a processing gas line 13 is provided upstream of the flow controller. And a pressure control system region 14 (second region). In the pressure control system area 14, the manual valve 13b, fill 13c, pressure A regulator 13d, a pressure sensor 13e, a control valve 13f, a filter 13h and a control valve 13i are provided.
ガスライン 1 3の上流側端部には、 複数のガス供給源 A、 B、 Cが接続されて いる。 特に図 2に示すように、 鉛直方向に延びるガスライン 1 3は、 その上流端 部である下端部において、 概ね 9 0度向きを変え、 前記第 1の鉛直平面と直交す る方向に延びる。 以下、 ガスライン 1 3の水平方向延長部分を、 ガスライン 1 3 の延長部 1 5ということとする。 なお、 ガスライン 1 3の鉛直方向延伸部分およ び延長部 1 5は、 前記第 1の鉛直平面と直交するとともに鉛直方向に延びる第 2 の鉛直平面内に位置する。 A plurality of gas supply sources A, B, and C are connected to the upstream end of the gas line 13. In particular, as shown in FIG. 2, the gas line 13 extending in the vertical direction changes its direction by approximately 90 degrees at the lower end which is the upstream end thereof, and extends in the direction orthogonal to the first vertical plane. Hereinafter, the horizontal extension of the gas line 13 is referred to as an extension 15 of the gas line 13. Note that the vertically extending portion and the extending portion 15 of the gas line 13 are located in a second vertical plane orthogonal to the first vertical plane and extending in the vertical direction.
ガスライン 1 3の延長部 1 5には、 ァクチユエ一夕付きの三方弁 1 7、 1 8、 1 9が直列に設けられている。 方弁 1 7、 1 8、 1 9の第 1のポート 1 7 a、 1 8 a、 1 9 aは、 ガス供給源 A , B , Cにそれそれ接続されるガス供給管 1 6 a, 1 6 b , 1 6 cにそれそれ接続されている。 三方弁 1 8の第 2および第 3の ポート 1 8 b, 1 8 cは、 三方弁 1 7の第 3のポート 1 7 cおよび三方弁 1 9の 第 2のポート 1 9 bにそれぞれ接続されている。 三方弁 1 7の第 2のポート 1 7 bは、 ァクチユエ一夕付きの二方弁 2 0およびチェックバルブ 2 1を介して、 ノ —ジガス Pを供給するライン 2 2に接続されている。 三方弁 1 9の第 3のポート 1 9 cは、 ガスライン 1 3の鉛直方向延伸部分に通じている。 In the extension 15 of the gas line 13, three-way valves 17, 18, and 19 with actuators are provided in series. The first ports 17 a, 18 a, 19 a of the directional valves 17, 18, 19 are gas supply pipes 16 a, 1, respectively connected to the gas sources A, B, C 6 b and 16 c are connected to each other. The second and third ports 18b and 18c of the three-way valve 18 are connected to the third port 17c of the three-way valve 17 and the second port 19b of the three-way valve 19, respectively. ing. The second port 17 b of the three-way valve 17 is connected to a line 22 for supplying the noz gas P via a two-way valve 20 with an actuator and a check valve 21. The third port 19 c of the three-way valve 19 communicates with a vertically extending portion of the gas line 13.
三方弁 1 7、 1 8、 1 9の第 2および第 3のポート 1 7 b , 1 7 c、 1 8 b, 1 8 c、 1 9 b、 1 9 cは常時連通している。 各三方弁 1 7、 1 8、 1 9のァク チユエ一夕は、 該三方弁に内蔵されたダイヤフラムの形態の弁体を動かし、 第 1 のポートが第 2および第 3のポートと連通した状態と該連通が遮断された状態と を切り換える。 The second and third ports 17b, 17c, 18b, 18c, 19b, and 19c of the three-way valves 17, 18, and 19 are always in communication. The actuator of each three-way valve 17, 18, 18, 19 moved a valve in the form of a diaphragm built in the three-way valve, and the first port was in communication with the second and third ports. And the communication is interrupted.
再度図 1を参照すると、 ガスライン 1 3に隣接してガスライン 2 3が配置され ている。 ガスライン 2 3には、 ガス供給源 Dからガスが供給される。 ガス供給ラ イン 2 3にも、 ガスライン 1 3と同様に、 ガス供給口 2 3 a、 手動バルブ 2 3 b、 フィル夕 2 3 c、 圧力調整器 2 3 d、 圧力センサ 2 3 e、 制御バルブ 2 3 fおよ び流量制御器 2 3 gが設けられている。 Referring again to FIG. 1, a gas line 23 is disposed adjacent to the gas line 13. Gas is supplied to the gas line 23 from the gas supply source D. As with gas line 13, gas supply line 23a, manual valve 23b, fill valve 23c, pressure regulator 23d, pressure sensor 23e, control A valve 23 f and a flow controller 23 g are provided.
図 1及び図 4に示すように、 パージガスライン 1 2から前述したライン 2 2が 分岐しており、 このライン 22は二方弁 20を介して三方弁 17の第 2のポート 17 bに接続されている。 As shown in FIGS. 1 and 4, the purge gas line 12 is connected to the line 22 described above. This line 22 is connected to the second port 17 b of the three-way valve 17 via the two-way valve 20.
パージガスライン 12から、 更に、 分岐ライン 25が分岐している。 分岐ライ ン 25は、 ガスライン 13の流量制御器 1 3 gの一次側に、 言い換えれば圧力制 御系領域 14の下流側に、 接続されている。 分岐ライン 25には、 コントロール 弁 25 aとチェックバルブ 25 bとが設けられている。 ガスライン 13から反応 処理炉 32に同じ種類のガスを複数回供給する場合などの圧力制御系領域 14を パージする必要がない場合には、 制御バルブ 13 f を閉じた状態で分岐ライン 2 5からガスライン 13にパージガスを送り込み、 ガスライン 13の圧力制御系領 域 14より下流側のみをパージすることができる。 なお、 分岐ライン 25は途中 で更に分岐してガスライン 23の流量制御器 23 gの一次側に接続されている。 上記の流体制御装置 1 1は、 単一の集積構造ュニット 26として構成されてい る。 集積構造ュニット 2 6は、 前記第 1の鉛直平面に沿って延びるベース板 27 と、 前記第 2の鉛直平面に沿って延びるベース板 28とを有する。 ベース板 28 の幅はガスライン 13の幅に等しい。 ベース板 27, 28上には、 複数の継手ブ ロック 26 aが取り付けられている。 流量制御器 12 g, 13 g, 23 g、 手動 バルブ 12 b, 13 b, 23 b、 フィル夕 12 c, 1 3 c, 23 c、 圧力調整器 12 d, 13 d, 23 d並びに三方弁 17, 18, 19および二方弁 20等の機 能部材はプロック (例えば弁プロック 26 b) 上に搭載される。 これら機能部材 用のブロックは継手プロヅク 26 aを介して相互に気密に接続される。 A branch line 25 further branches from the purge gas line 12. The branch line 25 is connected to the primary side of the flow controller 13 g of the gas line 13, in other words, to the downstream side of the pressure control system region 14. The branch line 25 is provided with a control valve 25a and a check valve 25b. If it is not necessary to purge the pressure control system area 14 such as when supplying the same type of gas to the reaction furnace 32 multiple times from the gas line 13, the control valve 13 f is closed and the branch line 25 is used. A purge gas is sent to the gas line 13 so that only the gas line 13 on the downstream side of the pressure control system area 14 can be purged. The branch line 25 is further branched on the way and connected to the primary side of the flow controller 23 g of the gas line 23. The above-described fluid control device 11 is configured as a single integrated structure unit 26. The integrated structure unit 26 has a base plate 27 extending along the first vertical plane and a base plate 28 extending along the second vertical plane. The width of the base plate 28 is equal to the width of the gas line 13. A plurality of joint blocks 26a are mounted on the base plates 27 and 28. Flow controllers 12 g, 13 g, 23 g, manual valves 12 b, 13 b, 23 b, fill valves 12 c, 13 c, 23 c, pressure regulators 12 d, 13 d, 23 d and three-way valves 17 Functional members such as, 18, 19 and the two-way valve 20 are mounted on a block (eg, valve block 26b). The blocks for these functional members are airtightly connected to each other via the joint block 26a.
次に作用について説明する。 Next, the operation will be described.
処理ガス Bを反応処理炉 32に供給する場合には、 二方弁 20を閉止した状態 で三方弁 1 8を開放する。 処理ガス Bは、 延長部 1 5からガスライン 13に導入 され、 ガスライン 13の圧力制御系領域 14を通過する際に所定の圧力に制御さ れ、 更に、 流量制御器 1 3により所定の流量に制御されて、 最後に処理反応炉 3 2内に導入される (図 2および図 3参照) 。 When supplying the processing gas B to the reaction processing furnace 32, the three-way valve 18 is opened with the two-way valve 20 closed. The processing gas B is introduced into the gas line 13 from the extension 15 and is controlled to a predetermined pressure when passing through the pressure control system region 14 of the gas line 13, and is further controlled to a predetermined flow rate by the flow controller 13. And finally introduced into the processing reactor 32 (see FIGS. 2 and 3).
次いで、 処理ガス Bとは異なる処理ガス、 例えば処理ガス Aを反応処理炉 32 に供給する場合には、 それに先立ち、 ガスライン 13およびその延長部 1 5内が パージガス Pによりパージされる。 この場合、 三方弁 17、 18、 19を閉止し て、 二方弁 20を開放すると、 パージガス Pがガスライン 13およびその延長部 15に供給され、 これによりガスライン 13およびその延長部 15の全体がパー ジされる。 このとき、 パージガス Pが供給されないデッド領域 (その前に用いた 処理ガス Bが残存して淀む領域) はなく、 処理ガス Bがガスライン 13およびそ の延長部 15内に残留することはない (図 4および図 5参照) 。 パージが終了し たら、 二方弁 20を閉止し、 三方弁 17を開放する。 これにより処理ガス Aが反 応処理炉 32に供給される。 Next, when a processing gas different from the processing gas B, for example, the processing gas A is supplied to the reaction processing furnace 32, the gas line 13 and the extension 15 thereof are purged by the purge gas P before the supply. In this case, close the three-way valves 17, 18, and 19 Then, when the two-way valve 20 is opened, the purge gas P is supplied to the gas line 13 and the extension 15 thereof, whereby the entire gas line 13 and the extension 15 are purged. At this time, there is no dead area where the purge gas P is not supplied (the area where the previously used processing gas B remains and stagnates), and the processing gas B does not remain in the gas line 13 and its extension 15 ( See Figure 4 and Figure 5). When the purging is completed, close the two-way valve 20 and open the three-way valve 17. As a result, the processing gas A is supplied to the reaction processing furnace 32.
以上説明したように、 上記の実施形態においては、 1つの (1系統の) ガスラ インに、 流量制御領域と圧力制御系領域を設け、 この 1つのガス供給ラインを複 数種のガス供給のために共用している。 このため、 流体制御装置の大幅なコスト ダウンを達成できる。 また、 ライン数の削減により流体制御装置のコンパクト化 を図ることもできる。 具体的には図 10および図 11に示す従来装置に比べて、 図 1に示す幅 Xだけ流体制御装置を小型化することができる。 更には、 ガス種の 増設も極めて容易に行なうことができる。 なお、 ガスラインの共用化には、 以下 の条件が必要である : (1) ガス同士を混合してもガスライン内では反応しない こと; (2) ガスが反応処理炉に同時に供給されることはないこと ; (3)各ガ スの流量レンジが近いこと。 例えば、 処理ガス A, B, Cの組み合わせは、 SiH4ガス、 S i2H2Clガス、 S i2C 16ガスの組み合わせ、 若しくは NH3 ガス、 N2H4ガス、 NXHYガスの組み合わせ、 とすることができる。 As described above, in the above embodiment, one (one system) gas line is provided with a flow control region and a pressure control region, and this one gas supply line is used for supplying a plurality of types of gas. Shared. For this reason, a significant cost reduction of the fluid control device can be achieved. In addition, the fluid control device can be made more compact by reducing the number of lines. Specifically, the fluid control device can be downsized by the width X shown in FIG. 1 as compared with the conventional device shown in FIGS. 10 and 11. Furthermore, the addition of gas species can be performed very easily. The following conditions are required for sharing a gas line: (1) Even if gases are mixed, they do not react in the gas line; (2) Gas is supplied to the reaction furnace simultaneously. (3) The flow ranges of each gas are close. For example, the combination of processing gases A, B, and C is a combination of SiH 4 gas, Si 2 H 2 Cl gas, and Si 2 C 16 gas, or a combination of NH 3 gas, N 2 H 4 gas, and NXHY gas. , And
なお、 上記実施形態においては、 1つのガスライン 13のみに複数種のガス供 給源を接続しているが、 複数のガスラインにそれそれ複数種のガス供給源を接続 することができる。 この場合、 例えば、 第 1のガスライン 13に S iH4ガス供 給源、 S i2H2 C 1ガス供給源および S i2C 16ガス供給源を接続し、 第 1 のガスライン 13と同様の構成を有する第 2のガスラインに NH3ガス供給源、 N2H4ガス供給源および NXHYガス供給源を接続することができる。 なお、 第 2 のガスラインには、 第 1のガスライン 13と同様にパージガスライン 22が接続 さ/ Π/ ο In the above embodiment, a plurality of gas supply sources are connected to only one gas line 13, but a plurality of gas supply sources can be connected to a plurality of gas lines. In this case, for example, the first gas line 13 is connected to a SiH 4 gas supply source, a Si 2 H 2 C 1 gas supply source and a Si 2 C 16 gas supply source, and the first gas line 13 is connected to the first gas line 13. An NH 3 gas supply source, an N 2 H 4 gas supply source and an NXHY gas supply source can be connected to a second gas line having a similar configuration. A purge gas line 22 is connected to the second gas line in the same manner as the first gas line 13.
また、 上記実施形態においては、 圧力制御系領域には、 圧力調整手段である圧 力調整器 13 dおよび圧力監視手段である圧力センサ 13 eの両方が設けられて いるが、 これに限定されない。 例えば、 処理ガスが低蒸気圧ガスの場合には積極 的に圧力調整を行わない場合があり、 このような場合には圧力調整器 1 3 dを設 けなくてもよい。 Further, in the above embodiment, both the pressure regulator 13 d as pressure adjusting means and the pressure sensor 13 e as pressure monitoring means are provided in the pressure control system area. But not limited to this. For example, when the processing gas is a low vapor pressure gas, the pressure may not be actively adjusted in such a case. In such a case, the pressure regulator 13 d may not be provided.
上記実施形態において、 流量制御器 1 2 g、 1 3 g、 2 3 gとしては、 マスフ ローコントローラが用いられるが、 これに限定されることなく圧力式流量制御器 を用いてもよい。 In the above embodiment, a mass flow controller is used as the flow controllers 12 g, 13 g, and 23 g, but a pressure type flow controller may be used without being limited thereto.
また、 流量制御器 1 2 g、 1 3 gN 2 3 gとしてデジタルマスフローコント口 ーラを用いることが好適である。 そうすれば、 各ガスに要求される供給流量が或 る程度異なっていたとしても、 それに対応することができる。 デジタル M F Cに は、 基準ガスと基準流量に対応する流量制御特性曲線のみが格納される。 異なる ガスを異なる流量に制御する場合には、 一種類の基準ガスおよびその基準流量に 対する変換係数を事前に実験的に求めておく。 そして、 異なるガスを異なる流量 に制御する場合には、 実際のガス流量の測定値と前記変換係数とから、 近似的な な補償値を演算し、 該補償値に基づいて流量制御特性曲線を補正して、 ガスの流 量制御を行なう。 これにより、 多数の異種ガスおよび広い流量レンジに対応する ことができる。 もちろん、 同じガスを異なる流量に制御する場合も、 同様の制御 が可能である。 図 6〜図 9は流体制御装置の他の実施形態を示している。 これら図において、 図 1〜図 5に記載した部材と同一の部材には同一符号を付して重複説明は省略す る。 図 6〜図 9に示す実施形態においても、 1つのガスライン 1 3に、 マスフ口 一コントローラ等の流量制御器 1 3 g (図 6〜図 9には図示せず) を設け、 流量 制御器 1 3 gの上流側に圧力制御系領域 1 4を設けている点は、 同じである。 図 6〜図 9に示す実施形態では、 前記第 1の鉛直平面上を延びるガスライン 1 3は、 その上流端部である下端部において、 概ね 9 0度向きを変えるが引き続き前記第 1の鉛直平面上を横方向に延びる。 以下、 ガスライン 1 3の水平方向延長部分を、 延長部 3 0ということとする。 It is preferable to use a digital mass flow controller as the flow controllers 12 g, 13 g, and N 23 g. In this way, even if the supply flow rates required for each gas are somewhat different, it can be accommodated. The digital MFC stores only the flow control characteristic curve corresponding to the reference gas and the reference flow rate. When controlling different gases to different flow rates, one type of reference gas and the conversion factor for that reference flow rate are experimentally obtained in advance. Then, when controlling different gases to different flow rates, an approximate compensation value is calculated from the measured value of the actual gas flow rate and the conversion coefficient, and the flow control characteristic curve is corrected based on the compensation value. Then, control the gas flow. This makes it possible to handle a large number of different gases and a wide flow range. Of course, the same control is possible when controlling the same gas at different flow rates. 6 to 9 show another embodiment of the fluid control device. In these drawings, the same members as those shown in FIGS. 1 to 5 are denoted by the same reference numerals, and redundant description will be omitted. Also in the embodiment shown in FIGS. 6 to 9, one gas line 13 is provided with a flow controller 13 g (not shown in FIGS. 6 to 9) such as a mass flow controller and the like. The point that the pressure control system region 14 is provided on the upstream side of 13 g is the same. In the embodiment shown in FIGS. 6 to 9, the gas line 13 extending on the first vertical plane changes its direction by approximately 90 degrees at the lower end portion which is the upstream end portion thereof, but the first vertical line continues. Extends laterally on a plane. Hereinafter, the horizontal extension of the gas line 13 is referred to as an extension 30.
延長部 3 0には、 処理ガス供給源 A , B, Cにそれそれ接続されるガス供給管 2 9 a , 2 9 b, 2 9 cが接続されている。 延長部 3 0の最も上流側にはパージ ガス供給源 Pに接続されるパージガス供給管 3 1が接続されている。 各ガス供給 管 2 9 a , 2 9 b , 2 9 c , 3 1には二方弁 3 2 (開閉弁) がそれそれ設けられ ている。 The gas supply pipes 29 a, 29 b, 29 c connected to the processing gas supply sources A, B, C are connected to the extension 30. Purge upstream of extension 30 The purge gas supply pipe 31 connected to the gas supply source P is connected. Each gas supply pipe 29a, 29b, 29c, 31 is provided with a two-way valve 32 (open / close valve).
図 6〜図 9に示す実施形態では、 ガス供給管 2 9 a , 2 9 b , 2 9 cの二方弁 の下流側とガスラインの延長部 3 0との間にデヅド領域 V (ガスが残存して淀む 領域) が生じるため、 ガスが残留する (図 6および図 7参照) 。 その場合、 図 8 および図 9に示すように、 パージガスを供給すると、 デット領域 Vに残留してい るガスはパージすることができない。 In the embodiment shown in FIGS. 6 to 9, the dead region V (gas is supplied) is provided between the downstream side of the two-way valve of the gas supply pipes 29 a, 29 b, and 29 c and the extension 30 of the gas line. The gas remains because a stagnation region remains (see Figs. 6 and 7). In this case, as shown in FIGS. 8 and 9, if a purge gas is supplied, the gas remaining in the dead region V cannot be purged.
図 6〜図 9に示す実施形態においても、 異なる種類のガスを 1つの (一系統 の) ガスラインで供給可能であるため、 流体制御装置の低コスト化を図 1〜図 5 に示す実施形態と同様に図ることができる。 しかし、 図 6〜図 9に示す実施形態 は、 ガスラインの延長部 3 0が横方向に延びているため、 ライン数の削減効果は あるが、 ライン数の削減に基づく流体制御装置の小型化の効果は図 1〜図 5に示 す実施形態と比較すると劣る。 また、 デット領域 Vが不可避的に発生してしまう 点においても、 図 6〜図 9に示す実施形態は、 図 1〜図 5に示す実施形態と比較 して劣る。 Also in the embodiment shown in FIGS. 6 to 9, different types of gas can be supplied by one (one system) gas line, so that the cost of the fluid control device can be reduced by the embodiment shown in FIGS. Can be achieved in the same manner as described above. However, the embodiment shown in FIGS. 6 to 9 has the effect of reducing the number of lines because the gas line extension 30 extends in the horizontal direction. Is inferior to the embodiment shown in FIGS. The embodiment shown in FIGS. 6 to 9 is also inferior to the embodiment shown in FIGS. 1 to 5 in that the dead region V is inevitably generated.
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2003/001338 WO2004070801A1 (en) | 2003-02-07 | 2003-02-07 | Fluid control device and heat treatment device |
| KR1020037013403A KR100929713B1 (en) | 2003-02-07 | 2003-02-07 | Fluid control unit and heat treatment unit |
| CN038000679A CN100407373C (en) | 2003-02-07 | 2003-02-07 | Fluid Control Devices and Heat Treatment Devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2003/001338 WO2004070801A1 (en) | 2003-02-07 | 2003-02-07 | Fluid control device and heat treatment device |
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| Publication Number | Publication Date |
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| WO2004070801A1 true WO2004070801A1 (en) | 2004-08-19 |
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| PCT/JP2003/001338 Ceased WO2004070801A1 (en) | 2003-02-07 | 2003-02-07 | Fluid control device and heat treatment device |
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| KR (1) | KR100929713B1 (en) |
| CN (1) | CN100407373C (en) |
| WO (1) | WO2004070801A1 (en) |
Cited By (3)
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|---|---|---|---|---|
| JP2013083282A (en) * | 2011-10-06 | 2013-05-09 | Horiba Stec Co Ltd | Fluid mechanism and support member constituting the fluid mechanism |
| US9188990B2 (en) | 2011-10-05 | 2015-11-17 | Horiba Stec, Co., Ltd. | Fluid mechanism, support member constituting fluid mechanism and fluid control system |
| US11261527B2 (en) * | 2019-08-12 | 2022-03-01 | MEO Engineering Company, Inc. | Method and apparatus for precursor gas injection |
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| CN101175560B (en) * | 2005-05-11 | 2012-12-26 | 亚申科技研发中心(上海)有限公司 | A high throughput materials-processing system |
| WO2006119705A1 (en) * | 2005-05-11 | 2006-11-16 | Accelergy Shanghai R & D Center Co., Ltd | A high throughput materials-processing system |
| JP4355724B2 (en) * | 2006-12-25 | 2009-11-04 | シーケーディ株式会社 | Gas integrated unit |
| JP5459895B2 (en) * | 2007-10-15 | 2014-04-02 | Ckd株式会社 | Gas shunt supply unit |
| JP5216632B2 (en) * | 2009-03-03 | 2013-06-19 | 東京エレクトロン株式会社 | Fluid control device |
| CN103382949A (en) * | 2013-07-10 | 2013-11-06 | 燕山大学 | Multifunctional expandable energy-saving hydraulic pressure integrated circuit |
| CN104406050A (en) * | 2014-11-07 | 2015-03-11 | 合肥大安印刷有限责任公司 | Working gas shunting system |
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- 2003-02-07 WO PCT/JP2003/001338 patent/WO2004070801A1/en not_active Ceased
- 2003-02-07 CN CN038000679A patent/CN100407373C/en not_active Expired - Fee Related
- 2003-02-07 KR KR1020037013403A patent/KR100929713B1/en not_active Expired - Fee Related
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| JPH07135207A (en) * | 1993-11-11 | 1995-05-23 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device and device thereof |
| JPH112400A (en) * | 1997-06-11 | 1999-01-06 | Fujikin:Kk | Mixing gas supplying device |
| US20010013363A1 (en) * | 1999-04-22 | 2001-08-16 | Hirofumi Kitayama | Apparatus and method for feeding gases for use in semiconductor manufacturing |
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| US9766634B2 (en) | 2011-10-05 | 2017-09-19 | Horiba Stec, Co., Ltd. | Fluid mechanism, support member constituting fluid mechanism and fluid control system |
| JP2013083282A (en) * | 2011-10-06 | 2013-05-09 | Horiba Stec Co Ltd | Fluid mechanism and support member constituting the fluid mechanism |
| US11261527B2 (en) * | 2019-08-12 | 2022-03-01 | MEO Engineering Company, Inc. | Method and apparatus for precursor gas injection |
| US12270105B2 (en) | 2019-08-12 | 2025-04-08 | MEO Engineering Company, Inc. | Method and apparatus for precursor gas injection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100407373C (en) | 2008-07-30 |
| KR20050089894A (en) | 2005-09-09 |
| KR100929713B1 (en) | 2009-12-03 |
| CN1586001A (en) | 2005-02-23 |
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