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WO2004059835A3 - Ion beam doped lithium tantalate or similar compounds - Google Patents

Ion beam doped lithium tantalate or similar compounds Download PDF

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Publication number
WO2004059835A3
WO2004059835A3 PCT/EP2003/051100 EP0351100W WO2004059835A3 WO 2004059835 A3 WO2004059835 A3 WO 2004059835A3 EP 0351100 W EP0351100 W EP 0351100W WO 2004059835 A3 WO2004059835 A3 WO 2004059835A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion beam
similar compounds
lithium tantalate
doped lithium
lita03
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2003/051100
Other languages
French (fr)
Other versions
WO2004059835A2 (en
Inventor
Serguei Mikhailov
Samuel Jaccard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FONDATION CAFI
FOND CAFI
Original Assignee
FONDATION CAFI
FOND CAFI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FONDATION CAFI, FOND CAFI filed Critical FONDATION CAFI
Priority to AU2003303406A priority Critical patent/AU2003303406A1/en
Publication of WO2004059835A2 publication Critical patent/WO2004059835A2/en
Publication of WO2004059835A3 publication Critical patent/WO2004059835A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

A shortcoming of known devices based on LiTa03 is the generation dielectric discharges due to the high pyroelectric coefficient exhibited by this material. Moreover the coupling between pyroelectric and piezoelectric effects produces heavy mechanical stresses when the crystal is subjected to thermal cycling, which lowers manufacturing. These shortcomings are overcome by doping LiTa03 by ionic implantation in order to increase its conductivity.
PCT/EP2003/051100 2002-12-24 2003-12-23 Ion beam doped lithium tantalate or similar compounds Ceased WO2004059835A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003303406A AU2003303406A1 (en) 2002-12-24 2003-12-23 Ion beam doped lithium tantalate or similar compounds

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02028945 2002-12-24
EP02028945.0 2002-12-24

Publications (2)

Publication Number Publication Date
WO2004059835A2 WO2004059835A2 (en) 2004-07-15
WO2004059835A3 true WO2004059835A3 (en) 2004-08-26

Family

ID=32668746

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/051100 Ceased WO2004059835A2 (en) 2002-12-24 2003-12-23 Ion beam doped lithium tantalate or similar compounds

Country Status (2)

Country Link
AU (1) AU2003303406A1 (en)
WO (1) WO2004059835A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06250399A (en) * 1993-02-24 1994-09-09 Fuji Elelctrochem Co Ltd Method and apparatus for heat treatment of substance having pyroelectricity
US6131257A (en) * 1993-11-25 2000-10-17 Fujitsu Limited Method of making a surface acoustic wave device
US6445265B1 (en) * 1998-12-30 2002-09-03 Thomson-Csf Device with acoustic waves guided in a fine piezoelectric material film bonded with a molecular bonding on a bearing substrate and method for making same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06250399A (en) * 1993-02-24 1994-09-09 Fuji Elelctrochem Co Ltd Method and apparatus for heat treatment of substance having pyroelectricity
US6131257A (en) * 1993-11-25 2000-10-17 Fujitsu Limited Method of making a surface acoustic wave device
US6445265B1 (en) * 1998-12-30 2002-09-03 Thomson-Csf Device with acoustic waves guided in a fine piezoelectric material film bonded with a molecular bonding on a bearing substrate and method for making same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WAN Q ET AL: "Investigation of H<+> and B<+>/H<+> implantation in LiTaO3 single-crystals", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. 184, no. 4, December 2001 (2001-12-01), pages 531 - 535, XP004313111, ISSN: 0168-583X *

Also Published As

Publication number Publication date
AU2003303406A1 (en) 2004-07-22
WO2004059835A2 (en) 2004-07-15
AU2003303406A8 (en) 2004-07-22

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