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WO2004040034A3 - Method of preparing a solution and application of this solution to prepare functional oxide layers - Google Patents

Method of preparing a solution and application of this solution to prepare functional oxide layers Download PDF

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Publication number
WO2004040034A3
WO2004040034A3 PCT/IB2003/004434 IB0304434W WO2004040034A3 WO 2004040034 A3 WO2004040034 A3 WO 2004040034A3 IB 0304434 W IB0304434 W IB 0304434W WO 2004040034 A3 WO2004040034 A3 WO 2004040034A3
Authority
WO
WIPO (PCT)
Prior art keywords
solution
preparing
application
oxide layers
prepare functional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2003/004434
Other languages
French (fr)
Other versions
WO2004040034A2 (en
Inventor
Wilhelmus C Keur
Hal Henricus A M Van
Danielle Beelen
Mareike K Klee
Joerg Meyer
Hans-Wolfgang Brand
Gerrit J W Huiskamp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Intellectual Property and Standards GmbH, Koninklijke Philips Electronics NV filed Critical Philips Intellectual Property and Standards GmbH
Priority to AU2003264795A priority Critical patent/AU2003264795A1/en
Publication of WO2004040034A2 publication Critical patent/WO2004040034A2/en
Publication of WO2004040034A3 publication Critical patent/WO2004040034A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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    • H01L21/02104—Forming layers
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
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Abstract

In the method of preparation of the Pb-Zr-Ti-containing solutions the lead is added to the Zr- and Ti-containing solution in powdery form. This has the advantage that it takes less time, and that nevertheless a stable solution is obtained. Preferably use is made of Zr- and Ti-butoxides and of lead acetate tri-hydrate. A very suitable solvent is 1-methoxy-2-propanol. The solution can be used for the manufacture of layers on a substrate with a high dielectric constant.
PCT/IB2003/004434 2002-10-31 2003-10-06 Method of preparing a solution and application of this solution to prepare functional oxide layers Ceased WO2004040034A2 (en)

Priority Applications (1)

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AU2003264795A AU2003264795A1 (en) 2002-10-31 2003-10-06 Method of preparing a solution and application of this solution to prepare functional oxide layers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP02079563 2002-10-31
EP02079563.9 2002-10-31
EP03100744 2003-03-24
EP03100744.6 2003-03-24

Publications (2)

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WO2004040034A2 WO2004040034A2 (en) 2004-05-13
WO2004040034A3 true WO2004040034A3 (en) 2004-11-04

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0676384A2 (en) * 1994-03-22 1995-10-11 Philips Patentverwaltung GmbH Perovskite containing composite material, process for its preparation, electronic component and module
JPH10226519A (en) * 1997-02-07 1998-08-25 Nec Corp Production of thin oxide film by coating method
US5840615A (en) * 1993-04-16 1998-11-24 Texas Instruments Incorporated Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution
US20020035961A1 (en) * 2000-06-21 2002-03-28 Seiko Epson Corporation Ceramic film and method of manufacturing the same, semiconductor device and piezoelectric device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840615A (en) * 1993-04-16 1998-11-24 Texas Instruments Incorporated Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution
EP0676384A2 (en) * 1994-03-22 1995-10-11 Philips Patentverwaltung GmbH Perovskite containing composite material, process for its preparation, electronic component and module
JPH10226519A (en) * 1997-02-07 1998-08-25 Nec Corp Production of thin oxide film by coating method
US20020035961A1 (en) * 2000-06-21 2002-03-28 Seiko Epson Corporation Ceramic film and method of manufacturing the same, semiconductor device and piezoelectric device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KOSEC M ET AL: "Chemical solution deposition of PZT thin films for microelectronics", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCIENCE PUBLISHERS B.V., BARKING, UK, vol. 5, no. 2-3, April 2002 (2002-04-01), pages 97 - 103, XP004412110, ISSN: 1369-8001 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30) *
WRIGHT J S ET AL: "EFFECT OF SOLUTION PRECESSING ON PZT THIN FILMS PREPARED BY A HYBRID MOD SOLUTION DEPOSITION ROUTE", JOURNAL OF ELECTROCERAMICS, KLUWER ACADEMIC PUBLISHERS, BOSTON, MA, US, vol. 3, no. 3, July 1999 (1999-07-01), pages 261 - 268, XP000925623, ISSN: 1385-3449 *

Also Published As

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WO2004040034A2 (en) 2004-05-13

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