WO2003104929A3 - USE OF OVERLAY DIAGNOSTICS TO IMPROVE AUTOMATIC PROCESS CONTROLS - Google Patents
USE OF OVERLAY DIAGNOSTICS TO IMPROVE AUTOMATIC PROCESS CONTROLS Download PDFInfo
- Publication number
- WO2003104929A3 WO2003104929A3 PCT/US2003/017899 US0317899W WO03104929A3 WO 2003104929 A3 WO2003104929 A3 WO 2003104929A3 US 0317899 W US0317899 W US 0317899W WO 03104929 A3 WO03104929 A3 WO 03104929A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- overlay
- metric
- image information
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
L'invention porte sur un procédé et un appareil d'analyse de cibles à recouvrement, et dans une exécution, sur un procédé d'extraction de données provenant d'une cible à recouvrement. On acquiert d'abord une information d'image ou un ou plusieurs signaux d'intensité à partir de la cible, puis on obtient une erreur de superposition à partir de la cible en analysant l'information d'image ou le ou les signaux d'intensité de la cible. On peut également obtenir un métrique d'erreur systématique à partir de la cible en analysant l'information d'image ou le ou les signaux d'intensité en provenant. L'erreur systématique peut indiquer la présence d'un métrique asymétrique dans une ou plusieurs parties de la cible. On peut en outre obtenir un métrique de bruit à partir de la cible en appliquant un modèle statistique à l'information d'image ou au ou aux signaux d'intensité en provenant. Les métriques de bruit caractérisent le bruit, par exemple un fond granuleux associé à la cible. Dans d'autres exécutions, on effectue une procédure d'analyse par recouvrement et/ou pas à pas en fonction du métrique d'erreur systématique et/ou du métrique de bruit, ainsi que des données de recouvrement.A method and apparatus for analyzing overlapping targets, and in one embodiment, a method for extracting data from an overlapping target. First acquire image information or one or more intensity signals from the target, then obtain an overlay error from the target by analyzing the image information or the signal (s). intensity of the target. One can also obtain a systematic error metric from the target by analyzing the image information or the intensity signal or signals from it. Systematic error can indicate the presence of an asymmetric metric in one or more parts of the target. In addition, a noise metric can be obtained from the target by applying a statistical model to the image information or to the intensity signal or signals from it. Noise metrics characterize noise, for example a grainy background associated with the target. In other embodiments, an overlay and / or stepwise analysis procedure is carried out as a function of the systematic error metric and / or the noise metric, as well as overlay data.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03736896A EP1512112A4 (en) | 2002-06-05 | 2003-06-05 | Use of overlay diagnostics for enhanced automatic process control |
| JP2004511937A JP4677231B2 (en) | 2002-06-05 | 2003-06-05 | Using overlay diagnostics for improved automated process control. |
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38628502P | 2002-06-05 | 2002-06-05 | |
| US60/386,285 | 2002-06-05 | ||
| US39584702P | 2002-07-11 | 2002-07-11 | |
| US60/395,847 | 2002-07-11 | ||
| US45668103P | 2003-03-19 | 2003-03-19 | |
| US60/456,681 | 2003-03-19 | ||
| US10/438,962 | 2003-05-14 | ||
| US10/438,962 US6928628B2 (en) | 2002-06-05 | 2003-05-14 | Use of overlay diagnostics for enhanced automatic process control |
| US10/438,963 | 2003-05-14 | ||
| US10/438,963 US7111256B2 (en) | 2002-06-05 | 2003-05-14 | Use of overlay diagnostics for enhanced automatic process control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2003104929A2 WO2003104929A2 (en) | 2003-12-18 |
| WO2003104929A3 true WO2003104929A3 (en) | 2004-06-24 |
Family
ID=29741145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2003/017899 Ceased WO2003104929A2 (en) | 2002-06-05 | 2003-06-05 | Use of overlay diagnostics for enhanced automatic process control |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1512112A4 (en) |
| JP (1) | JP4677231B2 (en) |
| WO (1) | WO2003104929A2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060117293A1 (en) * | 2004-11-30 | 2006-06-01 | Nigel Smith | Method for designing an overlay mark |
| JP5036429B2 (en) * | 2007-07-09 | 2012-09-26 | キヤノン株式会社 | Position detection apparatus, exposure apparatus, device manufacturing method, and adjustment method |
| US7873585B2 (en) * | 2007-08-31 | 2011-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for predicting a semiconductor parameter across an area of a wafer |
| NL2004815A (en) | 2009-06-17 | 2010-12-20 | Asml Netherlands Bv | Method of overlay measurement, lithographic apparatus, inspection apparatus, processing apparatus and lithographic processing cell. |
| NL2007088A (en) * | 2010-07-19 | 2012-01-23 | Asml Netherlands Bv | Method and apparatus for determining an overlay error. |
| US11372340B2 (en) | 2011-04-06 | 2022-06-28 | Kla Corporation | Method and system for providing a quality metric for improved process control |
| KR101609652B1 (en) * | 2012-07-10 | 2016-04-06 | 에이에스엠엘 네델란즈 비.브이. | Lithographic cluster system, method for calibrating a positioning device of a lithographic apparatus |
| KR102287757B1 (en) * | 2015-05-26 | 2021-08-09 | 삼성전자주식회사 | Methods of Revising an Overlay Correction Data |
| WO2017148759A1 (en) * | 2016-03-04 | 2017-09-08 | Asml Netherlands B.V. | Method for characterizing distortions in a lithographic process, lithographic apparatus, lithographic cell and computer program |
| JP2020519932A (en) * | 2017-04-28 | 2020-07-02 | エーエスエムエル ネザーランズ ビー.ブイ. | Optimization of the manufacturing process sequence for the product unit |
| US11378451B2 (en) | 2017-08-07 | 2022-07-05 | Kla Corporation | Bandgap measurements of patterned film stacks using spectroscopic metrology |
| EP3454126A1 (en) * | 2017-09-08 | 2019-03-13 | ASML Netherlands B.V. | Method for estimating overlay |
| CN113574643B (en) * | 2019-03-21 | 2024-12-03 | 科磊股份有限公司 | Improved parametrically stable misalignment measurements in semiconductor devices |
| US11604063B2 (en) | 2021-06-24 | 2023-03-14 | Kla Corporation | Self-calibrated overlay metrology using a skew training sample |
| KR102541500B1 (en) * | 2022-11-14 | 2023-06-13 | (주)오로스테크놀로지 | System for centering position of overlay key based on correlation and method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030115556A1 (en) * | 2001-12-13 | 2003-06-19 | International Business Machines Corporation | Feed-forward lithographic overlay offset method and system |
| US6612159B1 (en) * | 1999-08-26 | 2003-09-02 | Schlumberger Technologies, Inc. | Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers |
| US20030223630A1 (en) * | 2002-02-15 | 2003-12-04 | Kla-Tencor Corporation | Overlay metrology and control method |
| US6664121B2 (en) * | 2002-05-20 | 2003-12-16 | Nikon Precision, Inc. | Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5329334A (en) * | 1993-03-02 | 1994-07-12 | Lsi Logic Corporation | Integrated circuit test reticle and alignment mark optimization method |
| JP2985587B2 (en) * | 1993-07-06 | 1999-12-06 | 松下電器産業株式会社 | Alignment method and semiconductor device manufacturing apparatus |
| JP3248580B2 (en) * | 1999-02-16 | 2002-01-21 | 日本電気株式会社 | Registration accuracy measurement mark and registration accuracy measurement method |
| JP2002025882A (en) * | 2000-06-30 | 2002-01-25 | Hitachi Electronics Eng Co Ltd | Apparatus and method for measuring pattern overlay error |
| JP2002124458A (en) * | 2000-10-18 | 2002-04-26 | Nikon Corp | Overlay inspection apparatus and overlay inspection method |
-
2003
- 2003-06-05 EP EP03736896A patent/EP1512112A4/en not_active Withdrawn
- 2003-06-05 WO PCT/US2003/017899 patent/WO2003104929A2/en not_active Ceased
- 2003-06-05 JP JP2004511937A patent/JP4677231B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6612159B1 (en) * | 1999-08-26 | 2003-09-02 | Schlumberger Technologies, Inc. | Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers |
| US20030115556A1 (en) * | 2001-12-13 | 2003-06-19 | International Business Machines Corporation | Feed-forward lithographic overlay offset method and system |
| US20030223630A1 (en) * | 2002-02-15 | 2003-12-04 | Kla-Tencor Corporation | Overlay metrology and control method |
| US6664121B2 (en) * | 2002-05-20 | 2003-12-16 | Nikon Precision, Inc. | Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP1512112A4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005529488A (en) | 2005-09-29 |
| WO2003104929A2 (en) | 2003-12-18 |
| EP1512112A4 (en) | 2006-11-02 |
| EP1512112A2 (en) | 2005-03-09 |
| JP4677231B2 (en) | 2011-04-27 |
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