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WO2003030345A1 - Power supply for sputtering - Google Patents

Power supply for sputtering Download PDF

Info

Publication number
WO2003030345A1
WO2003030345A1 PCT/JP2002/009827 JP0209827W WO03030345A1 WO 2003030345 A1 WO2003030345 A1 WO 2003030345A1 JP 0209827 W JP0209827 W JP 0209827W WO 03030345 A1 WO03030345 A1 WO 03030345A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering
power supply
cathode
anode output
variation
Prior art date
Application number
PCT/JP2002/009827
Other languages
English (en)
French (fr)
Inventor
Noboru Kuriyama
Kazuhiko Imagawa
Original Assignee
Shibaura Mechatronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corporation filed Critical Shibaura Mechatronics Corporation
Priority to KR1020047004344A priority Critical patent/KR100571116B1/ko
Priority to EP02772900A priority patent/EP1434336A4/en
Priority to JP2003533424A priority patent/JP4272522B2/ja
Priority to CN028188829A priority patent/CN1559103B/zh
Publication of WO2003030345A1 publication Critical patent/WO2003030345A1/ja
Priority to US10/800,935 priority patent/US7531070B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1582—Buck-boost converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Dc-Dc Converters (AREA)
  • Plasma Technology (AREA)
PCT/JP2002/009827 2001-09-28 2002-09-25 Power supply for sputtering WO2003030345A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020047004344A KR100571116B1 (ko) 2001-09-28 2002-09-25 스퍼터링용 전원 장치
EP02772900A EP1434336A4 (en) 2001-09-28 2002-09-25 POWER SUPPLY FOR SPUTTER
JP2003533424A JP4272522B2 (ja) 2001-09-28 2002-09-25 スパッタリング用電源装置
CN028188829A CN1559103B (zh) 2001-09-28 2002-09-25 溅射电源单元
US10/800,935 US7531070B2 (en) 2001-09-28 2004-03-15 Sputtering power-supply unit

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001/303689 2001-09-28
JP2001/303691 2001-09-28
JP2001303689 2001-09-28
JP2001303691 2001-09-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/800,935 Continuation US7531070B2 (en) 2001-09-28 2004-03-15 Sputtering power-supply unit

Publications (1)

Publication Number Publication Date
WO2003030345A1 true WO2003030345A1 (en) 2003-04-10

Family

ID=26623433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009827 WO2003030345A1 (en) 2001-09-28 2002-09-25 Power supply for sputtering

Country Status (7)

Country Link
US (1) US7531070B2 (ja)
EP (1) EP1434336A4 (ja)
JP (1) JP4272522B2 (ja)
KR (1) KR100571116B1 (ja)
CN (1) CN1559103B (ja)
TW (1) TW564483B (ja)
WO (1) WO2003030345A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8033246B2 (en) * 2005-05-06 2011-10-11 Huettinger Elektronik Gmbh + Co. Kg Arc suppression
JP2023540624A (ja) * 2020-09-15 2023-09-25 セメコン アーゲー 分割パルスを有するコーティング装置及びコーティング方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006260808A (ja) * 2005-03-15 2006-09-28 Sanyo Tekunika:Kk 高輝度放電バルブの制御装置とその制御方法
WO2006099759A2 (de) * 2005-03-24 2006-09-28 Oerlikon Trading Ag, Trübbach Vakuumplasmagenerator
US7305311B2 (en) * 2005-04-22 2007-12-04 Advanced Energy Industries, Inc. Arc detection and handling in radio frequency power applications
JP5177958B2 (ja) * 2006-03-31 2013-04-10 Ｈｏｙａ株式会社 処理データ管理システム、磁気ディスク製造装置用の処理システム、および、磁気ディスク製造装置のデータ管理方法
US7939181B2 (en) * 2006-10-11 2011-05-10 Oerlikon Trading Ag, Trubbach Layer system with at least one mixed crystal layer of a multi-oxide
WO2008071734A2 (en) 2006-12-12 2008-06-19 Oc Oerlikon Balzers Ag Arc suppression and pulsing in high power impulse magnetron sputtering (hipims)
US8217299B2 (en) * 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
EP1995818A1 (en) 2007-05-12 2008-11-26 Huettinger Electronic Sp. z o. o Circuit and method for reducing electrical energy stored in a lead inductance for fast extinction of plasma arcs
KR101923221B1 (ko) * 2007-12-07 2018-11-28 에바텍 아크티엔게젤샤프트 Ｈｉｐｉｍｓ를 이용한 반응성 스퍼터링
US8395078B2 (en) 2008-12-05 2013-03-12 Advanced Energy Industries, Inc Arc recovery with over-voltage protection for plasma-chamber power supplies
PL2648209T3 (pl) 2009-02-17 2018-06-29 Solvix Gmbh Urządzenie zasilające do obróbki plazmowej
EP2333635A1 (en) * 2009-12-14 2011-06-15 Mitsubishi Electric R&D Centre Europe B.V. Method for obtaining information enabling the determination of a characteristic of a power source
WO2011121994A1 (ja) * 2010-03-30 2011-10-06 株式会社村田製作所 電源装置
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
US8552665B2 (en) 2010-08-20 2013-10-08 Advanced Energy Industries, Inc. Proactive arc management of a plasma load
KR101245193B1 (ko) * 2010-11-05 2013-03-19 한국표준과학연구원 자동적인 이온 코팅 전류조절이 가능한 이온 스퍼터 코팅장치
TWI617687B (zh) * 2014-12-04 2018-03-11 財團法人金屬工業研究發展中心 用於濺鍍設備之監測方法及監測系統
CN112187032B (zh) * 2019-07-04 2022-03-15 台达电子工业股份有限公司 电源供应装置及其操作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576939A (en) 1995-05-05 1996-11-19 Drummond; Geoffrey N. Enhanced thin film DC plasma power supply
JP2835322B2 (ja) 1997-02-20 1998-12-14 芝浦メカトロニクス株式会社 スパッタリング用電源装置および該装置を用いたスパッタリング装置
JP2835323B2 (ja) 1997-02-20 1998-12-14 芝浦メカトロニクス株式会社 スパッタリング装置用電源装置
WO1999025060A1 (en) 1997-11-07 1999-05-20 Sierra Applied Sciences, Inc. Phase-shift power supply
EP0989202A1 (en) 1997-02-20 2000-03-29 Shibaura Mechatronics Corporation Power supply device for sputtering and sputtering device using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194831A (ja) 1989-01-23 1990-08-01 Ishikawajima Harima Heavy Ind Co Ltd 直流放電用電源
DE3924398A1 (de) * 1989-07-24 1991-01-31 Boehringer Andreas Einrichtung zur speisung eines verbraucherzweipols mit einem weitgehend oberschwingungsfreien und dennoch rasch veraenderbaren gleichstrom
DE9109503U1 (de) * 1991-07-31 1991-10-17 Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik
JPH05311418A (ja) 1992-05-12 1993-11-22 Shibaura Eng Works Co Ltd アーク放電防止回路
JP3191135B2 (ja) 1994-02-23 2001-07-23 日本電子工業株式会社 直流グロー放電処理装置におけるアーク遮断方法及び装置
US5651865A (en) 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
JP3679840B2 (ja) 1995-09-05 2005-08-03 新電元工業株式会社 スパッタ装置用電源
US5584974A (en) 1995-10-20 1996-12-17 Eni Arc control and switching element protection for pulsed dc cathode sputtering power supply
JPH09279337A (ja) 1996-04-11 1997-10-28 Hitachi Ltd スパッタリング方法および装置
US6416638B1 (en) * 1997-02-20 2002-07-09 Shibaura Mechatronics Corporation Power supply unit for sputtering device
JP2000278950A (ja) * 1999-03-25 2000-10-06 Shibaura Mechatronics Corp スパッタリング用直流電源装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576939A (en) 1995-05-05 1996-11-19 Drummond; Geoffrey N. Enhanced thin film DC plasma power supply
JP2835322B2 (ja) 1997-02-20 1998-12-14 芝浦メカトロニクス株式会社 スパッタリング用電源装置および該装置を用いたスパッタリング装置
JP2835323B2 (ja) 1997-02-20 1998-12-14 芝浦メカトロニクス株式会社 スパッタリング装置用電源装置
EP0989202A1 (en) 1997-02-20 2000-03-29 Shibaura Mechatronics Corporation Power supply device for sputtering and sputtering device using the same
WO1999025060A1 (en) 1997-11-07 1999-05-20 Sierra Applied Sciences, Inc. Phase-shift power supply

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8033246B2 (en) * 2005-05-06 2011-10-11 Huettinger Elektronik Gmbh + Co. Kg Arc suppression
JP2023540624A (ja) * 2020-09-15 2023-09-25 セメコン アーゲー 分割パルスを有するコーティング装置及びコーティング方法

Also Published As

Publication number Publication date
JPWO2003030345A1 (ja) 2005-01-20
US7531070B2 (en) 2009-05-12
TW564483B (en) 2003-12-01
US20040182696A1 (en) 2004-09-23
KR100571116B1 (ko) 2006-04-13
CN1559103A (zh) 2004-12-29
EP1434336A1 (en) 2004-06-30
CN1559103B (zh) 2011-07-06
JP4272522B2 (ja) 2009-06-03
KR20040044988A (ko) 2004-05-31
EP1434336A4 (en) 2008-10-08

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